The information in this document is subject to change without notice.
© 1998
MOS FIELD EFFECT TRANSISTOR
2SK2981
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D12355EJ1V0DS00 (1st edition)
Date Published December 1998 NS CP(K)
Printed in Japan
PACKAGE DRAWING (Unit : mm)
TO-251(MP-3)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
6.5 ±0.2
5.0 ±0.2
2.3 ±0.2
0.5 ±0.1
0.6 ±0.1
0.6 ±0.1
1.3
MAX.
1.6 ±0.2
123
5.5 ±0.2
7.0
MIN.
13.7
MIN.
2.32.3
0.75
4
6.5 ±0.2
5.0 ±0.2 2.3 ±0.2
0.5 ±0.1
4.3
MAX.
1.3
MAX.
2.3 2.3
12 3
4
5.5 ±0.2
10.0 MAX.
1.5 +0.2
–0.1 1.5 +0.2
–0.1
0.9
MAX.
0.8
MAX.
0.8
0.5
0.8
12.0
MIN.
1.0
MIN.
1.5
TYP.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-252(MP-3Z) (SURFACE MOUNT TYPE)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
•Low on-resistance
RDS(on)1 = 27 mΩ (MAX.) (VGS = 10 V, ID = 10 A)
RDS(on)2 = 40 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A)
RDS(on)3 = 50 mΩ (MAX.) (VGS = 4 V, ID = 10 A)
•Low Ciss : Ciss = 860 pF (TYP.)
•Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK2981 TO-251
2SK2981-Z TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0) VDSS 30 V
Gate to Source Voltage (VDS = 0) VGSS ±20 V
Drain Current (DC) ID(DC) ±20 A
Drain Current (Pulse) Note ID(pulse) ±80 A
Total Power Dissipation (Tc = 25 °C) PT20 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to + 150 °C
Note PW ≤ 10
µ
s, Duty cycle ≤ 1 %
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Data Sheet D12355EJ1V0DS00
2
2SK2981
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain to Sourc e On-state Resist ance RDS(on)1 VGS = 10 V, ID = 10 A 20 27 mΩ
RDS(on)2 VGS = 4.5 V, I D = 10 A 30 40 mΩ
RDS(on)3 VGS = 4 V, ID = 10 A 35 50 mΩ
Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V
Forward Transfer Adm i ttance | yfs |V
DS = 10 V, ID = 10 A 6.0 13.0 S
Drain Leakage Current IDSS VDS = 30 V, V GS = 0 10
µ
A
Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10
µ
A
Input Capaci tance Ciss VDS = 10 V, VGS = 0, f = 1 MHz 860 pF
Output Capaci tance Coss 350 pF
Reverse Transf er Capac i tance Crss 160 pF
Turn-on Delay Time td(on) ID = 10 A, VGS(on) = 10 V, VDD = 15 V 25 ns
Rise Time trRG = 10 Ω270 ns
Turn-off Del ay T ime td(off) 65 ns
Fall Time tf65 ns
Total Gate Charge QGID = 20 A, VDD = 24 V, VGS = 10 V 20 nC
Gate to Source Charge QGS 3.5 nC
Gate to Drain Charge QGD 6.5 nC
Body Diode forward Voltage VF(S-D) IF = 20 A, V GS = 0 0.8 V
Reverse Recovery Time trr IF = 20 A, VGS = 0 35 ns
Reverse Recovery Charge Qrr di/dt = 100 A /
µ
s30nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
D.U.T. R
L
V
DD
R
G
R
G
=
10 Ω
PG.
Duty Cycle ≤ 1 %
V
GS (on)
90 %
010 %
90 %
I
D
010 %
I
D
V
GS
90 %
10 %
t
d (on)
t
on
t
off
t
r
t
d (off)
t
f
V
GS
Wave Form
I
D
Wave Form
D.U.T.
50 Ω
PG. V
DD
I
G
=
2
mA R
L
0
V
GS
t
µ
s
t = 1
Data Sheet D12355EJ1V0DS00 3
2SK2981
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - ˚C
dT - Percentage of Rated Power - %
020 40 60 80 100 120 140 160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - ˚C
P
T
- Total Power Dissipation - W
020 40 60 80 100 120 140 160
35
30
25
20
15
10
5
FORWARD BIAS SAFE OPERATING AREA
V
DS -
Drain to Source Voltage - V
I
D
- Drain Current - A
0.1
0.1
1
10
100
1 10 100
T
C
= 25
˚C
Single Pulse
Power Dissipation Limited
I
D(DC)
=20
A
R
DS(on)
Limited
(at V
GS
=10 V)
PW = 500 µs
PW = 1 ms
PW = 10 ms
PW = 100 ms
I
D(PULSE)
=80
A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0234
60
100
1
Pulsed
V
GS
=10.0 V
20
4.5 V
4.0 V
40
80
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
1
10
100
1000 Pulsed
024
T
A
= −25˚C
25˚C
75˚C
125˚C
68
Data Sheet D12355EJ1V0DS00
4
2SK2981
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th(t)
- Transient Thermal Resistance - ˚C/W
10
0.001
0.01
0.1
1
100
1 000
1 m 10 m 100 m 1 10 100 1000 10 100
Single Pulse
R
th(ch-a)
= 125 ˚C/W
R
th(ch-c)
= 6.25 ˚C/W
T
C
= 25˚C
µµ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
| y
fs
| - Forward Transfer Admittance - S
V
DS
= 10 V
Pulsed
0.1 1
1
10
100
10 100
0.1
T
ch
= −25˚C
25˚C
75˚C
125˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
05
20
10 15
Pulsed
60
40 I
D
= 10 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
40
1
60
10 100
Pulsed
0
10.0 V
20
V
GS
= 4.0 V
4.5 V
0.2
80
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
− 50 0 50 100 150
0
1.0
2.0
1.5
0.5
Data Sheet D12355EJ1V0DS00 5
2SK2981
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
0− 50
20
050 100 150
I
D
= 10 A
40
80
60
10.0 V
4.5 V
V
GS
= 4.0 V
1.0
ISD - Diode Forward Current - A
01.5
VSD - Source to Drain Voltage - V
0.5
Pulsed
VGS = 10 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0.1
1
10
100
0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
10
0.1
100
1000
10000
1 10 100
V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
C
iss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
1
0.1
10
100
1000
1 10 100
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10 Ω
t
f
t
r
t
d(on)
t
d(off)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Diode Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A/µs
V
GS
= 0 V
1
0.1
10
1 10 100
1000
100
V
GS
- Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0912 243
10
20
30
40
2
4
6
8
0
V
DD
= 24 V
15 V
6 V
V
DS
12
14
10
I
D
= 20 A
V
GS
= 10 V
V
GS
615 18 21
Data Sheet D12355EJ1V0DS00
6
2SK2981
[MEMO]
Data Sheet D12355EJ1V0DS00 7
2SK2981
[MEMO]
2SK2981
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
