1
MRF10150MOTOROLA RF DEVICE DATA
The RF Line
. . . designed for 1025 –1150 MHz pulse common base amplifier applications
such as TCAS, TACAN and Mode–S transmitters.
•Guaranteed Performance @ 1090 MHz
Output Power = 150 Watts Peak
Gain = 9.5 dB Min, 10.0 dB (Typ)
•100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
•Hermetically Sealed Package
•Silicon Nitride Passivated
•Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
•Internal Input and Output Matching
•Characterized with 10 µs, 10% Duty Cycle Pulses
•Recommended Driver for a Pair of MRF10500 Transistors
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCES 65 Vdc
Collector–Base Voltage VCBO 65 Vdc
Emitter–Base Voltage VEBO 3.5 Vdc
Collector Current — Peak (1) IC14 Adc
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°CPD700
4.0 Watts
W/°C
Storage Temperature Range Tstg –65 to +200 °C
Junction Temperature TJ200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (3) RθJC 0.25 °C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value
measured @ 10 µs, 10%.)
Order this document
by MRF10150/D
SEMICONDUCTOR TECHNICAL DATA
150 W (PEAK)
1025–1150 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 376B–02, STYLE 1
Motorola, Inc. 1994
MRF10150
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 65 — — Vdc
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 65 — — Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc
Collector Cutoff Current (VCB = 36 Vdc, IE = 0) ICBO — — 25 mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 20 — — —
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz) GPB 9.5 10 — dB
Collector Efficiency
(VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz) η40 — — %
Load Mismatch
(VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
ψNo Degradation in Output Power
Figure 1. Test Circuit
.15
.625 .275
1.751 .787.081 .081
.37
.583
1.803
.522
.081
1.383
.081
0.943 .489
1.0 .081
Z5
Z1 Z2 Z3 Z4 Z6 Z7 Z8 Z9
D.U.T.
RF
INPUT RF
OUTPUT
+
–
+
C2 C3 C4
L1
C1
C1 — 82 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1 µF
C4 — 100 µF, 100 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
Z1–Z9 — Microstrip, See Details
Board Material — Teflon Glass Laminate
Dielectric Thickness = 0.030″
εr = 2.55, 2 Oz. Copper
.363
.334
.34
.173
.09
.625
.39
.081
.100
3
MRF10150MOTOROLA RF DEVICE DATA
Figure 2. Output Power versus Input Power
Figure 3. Series Equivalent Input/Output Impedances
220
180
140
100
60
20
00 2 4 6 8 10 12 14 16 18 20 22 24
PIN, INPUT POWER (WATTS)
POUT, OUTPUT POWER (WATTS)
f = 1090 MHz
VCC = 50 V
f
MHz Zin
OHMS ZOL* (ZOUT)
OHMS
1030
1060
1090
1120
1150
3.8 + j3.5
4.0 + j3.3
4.2 + j3.0
4.4 + j2.3
4.1 + j1.8
4.6 + j0.7
4.6 + j0.3
4.1 – j1.0
3.8 – j0.8
3.6 – j0.3
POUT = 150 W Pk VCC = 50 V
ZOL* is the conjugate of the optimum load
impedance into which the device operates at a
given output power voltage and frequency.
f = 1030 MHz
1120
ZOUT (ZOL*)
Zin 1090
1150
1060
Zo = 10
Ω
f = 1030 MHz
1060
1090
1120
1150
MRF10150
4MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 376B–02
ISSUE B
M
A
M
0.25 (0.010) B M
T
M
A
M
0.25 (0.010) B M
T
M
A
M
0.25 (0.010) B M
T
G
R
K
Q
N
E
H
C
2 PL
D2 PL
F2 PL
–B–
–A– –T–
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.890 0.910 22.61 23.11
B0.370 0.400 9.40 10.16
C0.145 0.160 3.69 4.06
D0.140 0.160 3.56 4.06
E0.055 0.065 1.40 1.65
F0.003 0.006 0.08 0.15
G0.650 BSC 16.51 BSC
H0.110 0.130 2.80 3.30
K0.180 0.220 4.57 5.59
N0.390 0.410 9.91 10.41
Q0.115 0.135 2.93 3.42
R0.390 0.140 9.91 10.41
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer .
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center , No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MRF10150/D
*MRF10150/D*
◊
