SOT23 SILICON PLANAR LOW LEAKAGE
SERIES DIODE PAIR
ISSUE 2 SEPTEMBER 1995 ✪
PART MARKING DETAIL P8A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Repetitive Peak Reverse Voltage VRRM 100 V
Average Rectified Forward Current IF(AV) 250 mA
Non-Repetitive Peak Forward Current (t=1µs) IFSM 3.0 A
Power Dissipation at Tamb
= 25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Reverse Current IR5
5
nA
µA
VRRM
=100V
VRRM
=100V, Tamb
=150°C
Reverse Recovery Time* trr 400 ns IF= IR=50 400mA
Forward Recovery Time tfr 10 ns IF=10mA
Diode Capacitance Cd4pFV
R=1V, f=1MHz
Forward Overshoot Voltage Vfr Typ
0.9 V
IF=10mA,
Rise time=5ns ±20%
Forward Voltage VF1.4 V IF=-200mA
*Time for IR
to recover to 10% of IR peak
For typical characteristics graphs see FLLD263 datasheet.
SOT23
FLLD261
DIODE PIN CONNECTION
12
3
1
3
2
3 - 97
SOT23 SILICON PLANAR LOW LEAKAGE
COMMON ANODE DIODE PAIR
ISSUE 2 JANUARY 1996 ✪
PART MARKING DETAIL D63
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Repetitive Peak Reverse Voltage VRRM 100 V
Average Rectified Forward Current IF(AV) 250 mA
Non-Repetitive Peak Forward Current (t=1µs) IFSM 3.0 A
Power Dissipation at Tamb
= 25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Reverse Current IR5
5
nA
µA
VRRM
=100V
VRRM
=100V, Tamb
=150°C
Reverse Recovery Time* trr 400 ns IF= IR=50 400mA
Forward Recovery Time tfr 10 ns IF=10mA
Diode Capacitance Cd4pFV
R=1V, f=1MHz
Forward Overshoot Voltage Vfr Typ
0.9 V
IF=10mA,
Rise time=5ns ±20%
Forward Voltage VF1.4 V IF=-200mA
*Time for IR
to recover to 10% of IR
peak
SOT23
FLLD263
DIODE PIN CONNECTION
1
23
1
3
2
FLLD258
FLLD261
FLLD263
3 - 983 - 99
0100
VF- Forward Voltage (V)
IRv VF
0
25
80604020
5
10
15
20
TYPICAL CHARACTERISTICS
