2 an AMP company Preliminary Specification High Reliability Semiconductor Attenuator PIN Diode Chip MA47406 Features Glass Passivation Thermocompression bondable Thermosonically bondable Gold metallisation Mesa construction Description The MA47406-132 Silicon PIN diode chip has a thick intrinsic region and well-controlled resistance versus current characteristics which makes it particularly suitable for low distortion attenuator circuits. The Gold metallisation top and bottom is compatible with most hybrid manufacturing processes. This device has been tested previously for space application in accordance with the require- ments of ESA Specification PSS-01-608 and ESA/SCC 5010. Chip diodes can be supplied in accordance with a M/A-COM Wafer Approval and Chip Screening Sequence which incorporates the essential elements of ESA/SCC 5010. (MP3021-001). M/A-COM can provide PIN chips and packaged diodes in various case styles, for all switching attenuation and limiting applications. The Semiconductor Master Catalogue available on request, has detailed information on the following PIN diode products, many of which are suitable for Space Application.:- SMQ Square Surface and SOT23 PIN Diodes General Axial Lead PIN Diodes Beam Lead PIN Diodes Limiter Diodes HIPAX High Power Axial Lead PIN Diodes 2kV and 3kV PIN Diodes GaAs PIN Diodes Maximum Ratings (Tamb = 25C) V1.00 Package Outline ~ A yy | B ef INCHES MILLIMETERS DIM MIN. MAX. MIN. | MAX. A 0.180 0.023 0.510 | 0.610 B 0.004 0.012 0.080 | 0.150 @ Denotes Cathode Maximum No. Characteristics Symbol Ratings Units Remarks 1 Power Dissipation Po 200 mW Derate linearly to zero at 125C 2 Reverse Voltage Ve 100 Vv Derate linearly to 50V at 125C 3 Forward Current Ie 100 mA Derate to zero at 125C 4 Operating Temperature Top -65 to +125 C 5 Storage Temperature Tsto -65 to 150 C 6 Soldering Temperature Tsor 235 C 10 secs max. The Preliminary Specifications Data Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction. M/A-COM, Ltd. North America: Tel. (800) 366-2266 a Asia/Pacific: Tel. Fax (800) 618-8883 Fax +85 2 2111 8088 +85 2 2111 8087 a Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020Attenuator PIN Diode Chip MA47406 v1.00 Electrical Measurements at Room Temperature d.c. and a.c. Parameters MIL-STD-750 Test Limits No. Characteristics Symbol Test Method Conditions Min Max Units Forward Voltage VE 4011 I;=1mA 0.75 Vv 2 | Reverse Current Ip 4016 Vp = 100 Volts 10 HA Junction Capacitance C, 4001 Ve =-10 Volts 0.15 pF F =1 Mhz C, = Crota = CoackaGe 4 Minority Carrier Lifetime Tr I; =10 mA, Ip =6 mA 100 ns See Figure 1 5 | Series Resistance Rg F = 100 MHz I-=10mA 8 Q I;=1mA 50 Ww I; =0.1 mA 400 Ww See Figure 2 Note 1: Tests 3, 4 and 5 and all tests shown in the following tables are carried out on die selected at random from the production wafer and assembled in a ceramic package. Electrical Measurements at High and Low Temperature, -55C to +125C MIL-STD-750 Test Limits No. Characteristics Symbol Test Method Conditions Min Max Units 1 Reverse Current Ip 4016 VR = 50V 50 HA Parameter Drift Values No. Characteristics Symbol Change Limits A Test Conditions 1. | Forward Voltage Ve + 100 mV I=1mA 2. | Reverse Current Ip + 2 pA or + 100% whichever is the Ve = 100 Volts greater referred to the initial measurement Conditions for High Temperature Reverse Bias Burn-in No. Characteristics Symbol Conditions Units 1. | Reverse Voltage Ve 50 +1 Vv 2. | Ambient Temperature Tamb +125 +0, -5 C The Preliminary Specifications Data Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction. M/A-COM, Ltd. North America: Tel. (800) 366-2266 a Asia/Pacific: Tel. +85 22111 8088 a Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +85 22111 8087 Fax +44 (1344) 300 020Attenuator PIN Diode Chip MA47406 V1.00 Conditions for Operating Life Tests No. Characteristics Symbol Conditions Units 1. Reverse Voltage Ve 50 +1 Vv 2. Ambient Temperature Tamb +125 +0, -5 C Electrical Measurements at Intermediate Points and Completion of Endurance Testing MIL-STD-750 Test Limits No. Characteristics Symbol Test Method Conditions Min Max Units 1 Forward Voltage Ve 4011 l|-=1mA 0.75 Vv 2 | Reverse Current Ip 4016 VR = 100 Volts 10 HA 3 | Junction Capacitance C, 4001 Ve =-10 Volts 0.15 pF F = 1 Mhz Cy =Crotat > Cpackace Electrical Measurements During and on Completion of Radiation Testing (only if requested) No. Characteristics Symbol MIL-STD-750 Test Test Method Conditions D 1. | Reverse Voltage Ve 4016 Vp = 100 Volts 20 nA or 200% whichever is greater The Preliminary Specifications Data Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction. M/A-COM, Ltd. North America: Tel. (800) 366-2266 a Asia/Pacific: Tel. +85 22111 8088 a Europe: Tel. +44 (1344) 869 595 Fax (800) 618-8883 Fax +85 22111 8087 Fax +44 (1344) 300 020Attenuator PIN Diode Chip MA47406 v1.00 Figure 1. CIRCUIT FOR MEASUREMENT OF MINORITY CARRIER LIFETIME + es as 7 I I I I I . I I TF 20 dB jH-+ 5} 4 WW Isolating |_Diode Jig ----- Capacitor / i 50 Q To Scope = Load Attenuator = . Figure 2. Figure 3. CIRCUIT FOR MEASUREMENT OF SERIES RESISTANCE DC Power Bias Box RF Impedance Supply Diode Test Analyser 4191A Jig 16091A TYPICAL SERIES RESISTANCE CURVE 10,000 = @ 1,000 4 & 3 = o > 4 100 = 3 Oo c sg 4 wn % 10 4 @ ow wo o 4 o 8 102 0.1 MA47406 10pA 100HA 1mA 10mA 100mA Forward Current, IF The Preliminary Specifications Data Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction. North America: Tel. (800) 366-2266 Fax (800) 618-8883 a Asia/Pacific: Tel. +85 22111 8088 Fax +85 22111 8087 M/A-COM, Ltd. a Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020