ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
Document Number: 88356
Revision: 07-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
TRANSZORB® Transient Voltage Suppressors
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE18C).
Electrical characteristics apply in both directions.
FEATURES
• Glass passivated chip junction
• Available in uni-directional and
bi-directional
• 1500 W peak pulse power capability
with a 10/1000 μs waveform, repetitive
rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Find out more about Vishay’s Automotive Grade
Product requirements at:
www.vishay.com/applications
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of sensor
units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case: Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
PRIMARY CHARACTERISTICS
VWM 5.0 V to 18 V
PPPM 1500 W
PD6.5 W
IFSM 200 A
TJ max. 175 °C
Case Style 1.5KE
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1) PPPM 1500 W
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3) IPPM See next table A
Power dissipation on infinite heatsink at TL = 75 °C (fig. 8) PD6.5 W
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) IFSM 200 A
Maximum instantaneous forward voltage at 100 A for uni-directional only VF3.5 V
Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88356
Revision: 07-May-10
2
Notes
(1) “C” suffix indicates bi-directional
(2) ICTE5 and 1N6373 are not available as bi-directional
(3) Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; clamping factor: the ratio of the actual VC (clamping voltage) to the VBR
(breakdown voltage) as measured on a specific device
Note
(1) Automotive grade
ELECTRICAL CHARACTERISTICS (JEDEC REGISTERED DATA) (TA = 25 °C unless otherwise noted)
JEDEC
TYPE NUMBER
GENERAL
SEMICONDUCTOR
PART NUMBER
STAND-OFF
VOLTAGE
VWM (V)
MINIMUM
BREAKDOWN
VOLTAGE
AT 1.0 mA
VBR (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA)
MAXIMUM
CLAMPING
VOLTAGE
AT IPP = 1.0 A
VC (V)
MAXIMUM
CLAMPING
VOLTAGE AT
IPP = 10 A
VC (V)
MAXIMUM
PEAK
PULSE
CURRENT
IPP (A)
UNI-DIRECTIONAL TYPES
1N6373 (2) ICTE5 (2) 5.0 6.0 300 7.1 7.5 160
1N6374 ICTE8 8.0 9.4 25.0 11.3 11.5 100
1N6375 ICTE10 10.0 11.7 2.0 13.7 14.1 90
1N6376 ICTE12 12.0 14.1 2.0 16.1 16.5 70
1N6377 ICTE15 15.0 17.6 2.0 20.1 20.6 60
1N6378 ICTE18 18.0 21.2 2.0 24.2 25.2 50
BI-DIRECTIONAL TYPES
1N6382 ICTE8C 8.0 9.4 50.0 11.4 11.6 100
1N6383 ICTE10C 10.0 11.7 2.0 14.1 14.5 90
1N6384 ICTE12C 12.0 14.1 2.0 16.7 17.1 70
1N6385 ICTE15C 15.0 17.6 2.0 20.8 21.4 60
1N6386 ICTE18C 18.0 21.2 2.0 24.8 25.5 50
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ICTE5-E3/54 0.968 54 1400 13" diameter paper tape and reel
ICTE5HE3/54 (1) 0.968 54 1400 13" diameter paper tape and reel
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
Document Number: 88356
Revision: 07-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 3. Pulse Waveform
td - Pulse Width (s)
PPPM - Peak Pulse Power (kW)
1.0 μs 10 μs 100 μs 1.0 ms 10 ms
0.1 μs
0.1
1
10
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
100
75
50
25
0
0 25 50 75 100 125 150 175 200
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
TJ - Initial Temperature (°C)
0
50
100
150
t
r
= 10 μs
Peak Value
IPPM
Half Value -
IPPM
I
PP
2
t
d
10/1000 μs Waveform
as defined by R.E.A.
01.0 2.0 3.0 4.0
t - Time (ms)
I
PPM
- Peak Pulse Current, % I
RSM
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
Figure 4. Typical Junction Capacitance Uni-Directional
Figure 5. Typical Junction Capacitance
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
VBR - Breakdown Voltage (V)
CJ - Junction Capacitance (pF)
100
1000
10 000
100 000
10
1.0 100 200
Measured at
Zero Bias
Measured at Stand-Off
Voltage VWM
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
V
BR
- Breakdown Voltage (V)
C
J
- Junction Capacitance (pF)
100
1000
10 000
100 000
101.0 100 200
Bi-Directional Type
Measured at
Zero Bias
Measured at Stand-Off
Voltage V
WM
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25 °C
Number of Cycles at 60 Hz
IFSM - Peak Forward Surge Current (A)
1510 50 100
10
50
100
200
TJ = TJ max.
8.3 ms Single Half Sine-Wave
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88356
Revision: 07-May-10
4
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 7. Typical Characteristics Clamping Voltage
V
C
- Clamping Voltage (V)
I
PP
- Peak Pulse Current (A)
10
50
1
10861214161820222426
28
Uni-Directional Only
T
A
= 25 °C
ICTE5
ICTE8
ICTE10
ICTE12
ICTE18
ICTE15
Figure 8. Power Derating Curve
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0 25 50 75 100 125 150 175 200
P
D
- Power Dissipation (W)
T
L
- Lead Temperature (°C)
L = 0.375" (9.5 mm)
Lead Lengths
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
0.210 (5.3)
0.190 (4.8)
DIA.
0.042 (1.07)
0.038 (0.96)
DIA.
Case Style 1.5KE
Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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