6-378
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
Features
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
3.5 V Typical Vd
• 3 dB Bandwidth:
DC to 0.8 GHz
• High Gain:
18.5␣ dB Typical at 0.5 GHz
• Low Noise Figure:
3.0 dB Typical at 0.5 GHz
• Low Cost Plastic Package
MSA-0685
85 Plastic Package
Description
The MSA-0685 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
Typical Biasing Configuration
C
block
C
block
R
bias
V
CC
>
5 V
V
d
= 3.5 V
RFC (Optional)
IN OUT
MSA
4
12
3
plastic package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
5965-9587E
6-379
MSA-0685 Absolute Maximum Ratings
Parameter Absolute Maximum[1]
Device Current 50 mA
Power Dissipation[2,3] 200 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150°C
Thermal Resistance[2,4]:
θjc = 110°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE
= 25°C.
3. Derate at 9.1 mW/°C for TC > 128°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
GPPower Gain (|S21|2) f = 0.1 GHz dB 20.0
f = 0.5 GHz 17.0 18.5
∆GPGain Flatness f = 0.1 to 0.5 GHz dB ±0.7
f3 dB 3 dB Bandwidth GHz 0.8
Input VSWR f = 0.1 to 1.5 GHz 1.5:1
Output VSWR f = 0.1 to 1.5 GHz 1.4:1
NF 50 Ω Noise Figure f = 0.5 GHz dB 3.0
P1 dB Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 2.0
IP3Third Order Intercept Point f = 0.5 GHz dBm 14.5
tDGroup Delay f = 0.5 GHz psec 200
VdDevice Voltage V 2.8 3.5 4.2
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 12 to 25 mA. Typical performance as a function of current
is on the following page.
Electrical Specifications[1], TA = 25°C
Symbol Parameters and Test Conditions: Id = 16 mA, ZO = 50 ΩUnits Min. Typ. Max.
VSWR
6-380
MSA-0685 Typical Scattering Parameters (Z = 50 Ω, TA = 25°C, Id = 16 mA)
Freq.
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
0.1 .04 171 20.1 10.09 171 –22.5 .075 5 .04 –30 1.04
0.2 .02 –180 29.8 9.75 161 –22.4 .076 10 .05 –56 1.04
0.3 .02 –143 19.4 9.38 153 –22.2 .077 15 .07 –76 1.05
0.4 .03 –113 19.1 8.99 145 –21.8 .081 17 .08 –91 1.04
0.5 .05 –105 18.7 8.57 138 –21.3 .086 21 .10 –104 1.04
0.6 .07 –101 18.2 8.14 131 –20.7 .092 25 .11 –116 1.03
0.8 .10 –111 17.3 7.32 119 –19.7 .103 28 .13 –134 1.01
1.0 .13 –118 16.4 6.57 107 –18.8 .115 28 .14 –150 0.99
1.5 .21 –140 14.1 5.06 84 –17.1 .140 28 .15 180 1.00
2.0 .29 –163 12.0 3.98 65 –15.8 .163 26 .16 157 1.02
2.5 .34 –176 10.3 3.26 55 –15.2 .174 28 .16 150 1.06
3.0 .41 169 8.7 2.71 42 –14.8 .181 25 .15 143 1.10
3.5 .46 157 7.2 2.31 30 –14.2 .194 22 .13 144 1.11
4.0 .49 146 6.1 2.01 18 –13.8 .203 20 .10 156 1.13
4.5 .52 135 5.0 1.77 7 –13.4 .215 17 .09 173 1.14
5.0 .54 123 4.1 1.60 –3 –12.9 .226 15 .09 –178 1.14
Note:
1. A model for this device is available in the DEVICE MODELS section.
S11 S21 S12 S22
G
p
(dB)
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25°C, I
d
= 16 mA.
102345
V
d
(V)
Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current.
0
3
6
9
12
15
18
21
0
5
10
15
20
25
Gain Flat to DC
I
d
(mA)
T
C
= +85°C
T
C
= +25°C
T
C
= –25°C
I
d
(mA)
0
5
10
15
20
25
G
p
(dB)
10 20 25 3015
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
0
1
2
3
4
5
0
1
2
3
4
5
17
18
19
20
–25 +250 +55 +85
P
1 dB
(dBm)
NF (dB)
Gp (dB)
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 0.5 GHz,
I
d
=16mA.
P
1 dB
NF
G
P
0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
-4
0
4
8
12
P
1 dB
(dBm)
I
d
= 20 mA
I
d
= 30 mA
I
d
= 12 mA
I
d
= 16 mA 2.5
2.0
3.0
3.5
4.0
NF (dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
0.1 0.2 0.3 0.5 2.01.0 4.0
I
d
= 12 mA
I
d
= 16 mA, 30 mA
I
d
= 20 mA
Typical Performance, TA = 25°C
(unless otherwise noted)
6-381
85 Plastic Package Dimensions
13
4
2
5° TYP.
45°
GROUND
GROUND
RF OUTPUT
AND BIAS
RF INPUT
.085
2.15
.286 ± .030
7.36 ± .76
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
mm
.020
.51
.07
0.43
.060 ± .010
1.52 ± .25 .006 ± .002
.15 ± .05
0.143 ± 0.015
3.63 ± 0.38
A06
