© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/20/16
TVS Diode Arrays (SPA
® Diodes)
Lightning Surge Protection- SLVU2.8-8 Series
Absolute Maximum Ratings
Parameter Rating Units
Peak Pulse Power (tP=8/20µs) 750 W
Peak Pulse Current (tP=8/20µs) 30 A
Operating Temperature -40 to 125 ºC
Storage Temperature -55 to 150 ºC
Electrical Characteristics (TOP = 25°C)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage VRWM IR≤1μA (Each Line) 2.8 V
Reverse Breakdown Voltage VBR IT=2μA (Each Line) 3.0 V
Snapback Voltage VSB ISB=50mA 2.8 V
Reverse Leakage Current ILEAK VR=2.8V (Each Line) 0.1 μA
Clamping Voltage1VC
IPP=5A, tP=8/20μs (Each Line) 8.5 V
IPP=24A, tP=8/20μs (Each Line) 17
ESD Withstand Voltage1VESD
IEC61000-4-2 (Contact) ±30
kV
IEC61000-4-2 (Air) ±30
Dynamic Resistance2RDYN TLP tp=100ns, (Each Line) 0.3 Ω
Diode Capacitance1CDVR=0V, f=1MHz (Each Line) 2.6 3.0 pF
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Note: 1 Parameter is guaranteed by design and/or device characterization.
2 Transmission Line Pulse (TLP) test setting : Std.TDR(50Ω),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: star t1=70ns to end t2=80ns
Thermal Information
Parameter Rating Units
Storage Temperature Range -55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature (Soldering
20-40s)
260 °C
Capacitance vs. Reverse Bias (Each line)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
00.4 0.81.2 1.622.42.8
&DSDFLWDQFHS)
Bias Voltage (V)
Clamping Voltage vs. Peak Pulse Currennt (Each line)
0
5
10
15
20
25
30
0510 15 20 25 30
Clamp Voltage-VC (V)
Peak Pulse Current-I
PP
(A)