ATF-501P8
High Linearity Enhancement Mode[1] Pseudomorphic HEMT
in 2x2 mm2 LPCC[3] Package
Data Sheet
Description
Avago Technologies’s ATF-501P8 is a single-voltage high
linearity, low noise E-pHEMT housed in an 8-lead JEDEC-
standard leadless plastic chip carrier (LPCC[3]) package.
The device is ideal as a medium-power amplier. Its
operating frequency range is from 400 MHz to 3.9 GHz.
The thermally ecient package measures only 2mm
x 2mm x 0.75mm. Its backside metalization provides
excellent thermal dissipation as well as visual evidence
of solder reow. The device has a Point MTTF of over 300
years at a mounting temperature of +85ºC. All devices
are 100% RF & DC tested.
Features
• Single voltage operation
• High Linearity and P1dB
• Low Noise Figure
• Excellent uniformity in product specications
• Small package size: 2.0 x 2.0 x 0.75 mm3
• Point MTTF > 300 years[2]
• MSL-1 and lead-free
• Tape-and-Reel packaging option available
Specications
• 2 GHz; 4.5V, 280 mA (Typ.)
• 45.5 dBm Output IP3
• 29 dBm Output Power at 1dB gain compression
• 1 dB Noise Figure
• 15 dB Gain
• 14.5 dB LFOM[4]
• 65% PAE
• 23oC/W thermal resistance
Applications
• Front-end LNA Q2 and Q3, Driver or Pre-driver
Amplier for Cellular/PCS and WCDMA wireless
infrastructure
• Driver Amplier for WLAN, WLL/RLL and MMDS
applications
• General purpose discrete E-pHEMT for other high
linearity applications
Pin Connections and Package Marking
Note:
Package marking provides orientation and identication:
“0P” = Device Code
“x” = Date code indicates the month of manufacture.
Notes:
1. Enhancement mode technology employs a single positive Vgs,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Conforms to JEDEC reference outline MO229 for DRP-N.
4.
Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias
power.
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
0Px
Top View
Pin 8
Source
(Thermal/RF Gnd)
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1C)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
2
ATF-501P8 Absolute Maximum Ratings[1]
Absolute
Symbol Parameter Units Maximum
VDS Drain–Source Voltage[2] V 7
VGS Gate–Source Voltage[2] V -5 to 0.8
VGD Gate Drain Voltage[2] V -5 to 1
IDS Drain Current[2] A 1
IGS Gate Current mA 12
Pdiss Total Power Dissipation[3] W 3.5
Pin max. RF Input Power dBm 30
TCH Channel Temperature °C 150
TSTG Storage Temperature °C -65 to 150
θch_b Thermal Resistance[4] °C/W 23
Notes:
1. Operation of this device in excess of
any one of these parameters may cause
permanent damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureTB is
25°C. Derate 43.5 mW/°C for TB > 69.5°C.
4. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
Notes:
5. Distribution data sample size is 300 samples taken from 3 dierent wafers and 3 dierent lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
6. Measurements are made on production test board, which represents a trade-o between optimal OIP3, P1dB and VSWR. Circuit losses have
been de-embedded from actual measurements.
Figure 1. Typical IV curve (Vgs = 0.01V) per step.
Vds (V)
Ids (mA)
0 61 2 3 4 5
800
700
600
500
400
300
200
100
0
Vgs=0.6V
Vgs=0.55V
Vgs=0.5V
Vgs=0.7V
Vgs=0.65V
Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA[5,6]
Figure 2. P1dB.
P1dB (dBm)
27.5 30.528 28.5 29 29.5 30
120
100
80
60
40
20
0
Cpk=1.76
Stdev=0.3
+3 Std–3 Std
Figure 3. PAE.
PAE (%)
45 8555 65 75
120
100
80
60
40
20
0
Cpk=1.51
Stdev=3.38
+3 Std–3 Std
Figure 4. Gain.
GAIN (dB)
13 1714 15 16
100
80
60
40
20
0
Cpk=1.61
Stdev=0.33
+3 Std–3 Std
Figure 5. OIP3.
OIP3 (dBm)
42 5043 44 45 46 47 48 49
100
80
60
40
20
0
Cpk=1.1
Stdev=0.87
+3 Std–3 Std
3
ATF-501P8 Electrical Specications
TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 280 mA unless otherwise specied.
Symbol Parameter and Test Condition Units Min. Typ. Max.
Vgs Operational Gate Voltage Vds = 4.5V, Ids = 280 mA V 0.42 0.55 0.67
Vth Threshold Voltage Vds = 4.5V, Ids = 32 mA V — 0.33 —
Idss Saturated Drain Current Vds = 4.5V, Vgs = 0V µA — 5 —
Gm Transconductance Vds = 4.5V, Gm = ∆Ids/∆Vgs; mmho — 1872 —
∆Vgs = Vgs1 – Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
Igss Gate Leakage Current Vds = 0V, Vgs = -4.5V µA -30 -0.8 —
NF Noise Figure[1] f = 2 GHz dB — 1 —
f = 900 MHz dB — — —
G Gain[1] f = 2 GHz dB 13.5 15 16.5
f = 900 MHz dB — 16.6 —
OIP3 Output 3rd Order Intercept Point[1,2] f = 2 GHz dBm 43 45.5 —
f = 900 MHz dBm — 42 —
P1dB Output 1dB Compressed[1] f = 2 GHz dBm 27.5 29 —
f = 900 MHz dBm — 27.3 —
PAE Power Added Eciency[1] f = 2 GHz % 50 65 —
f = 900 MHz % — 49 —
ACLR Adjacent Channel Leakage Oset BW = 5 MHz dBc — 63.9 —
Power Ratio[1,3] Oset BW = 10 MHz dBc — 64.1 —
Notes:
1. Measurements at 2 GHz obtained using production test board described in Figure 2 while measurement at 0.9GHz obtained from load pull
tuner.
2. i ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz and Pin = -5 dBm per tone.
ii ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 910 MHz and Pin = -5dBm per tone.
3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -5 dBm
- Channel Integrate Bandwidth = 3.84 MHz
4. Use proper bias, board, heatsinking and derating designs to ensure max channel temperature is not exceeded.
See absolute max ratings and application note for more details.
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE measurements at 2 GHz. This circuit achieves a trade-o
between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
Input Output
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
Output
Matching
Circuit
Γ_mag=0.69
Γ_ang=-163°
(0.9 dB loss)
Input
Matching
Circuit
Γ_mag=0.79
Γ_ang=-164°
(1.1 dB loss)
DUT
4
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V 280 mA and
4.5V 400 mA quiesent bias respectively:
Figure 7. Simplied schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply.
Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
Typical Gammas at Optimum OIP3 at 4.5V 280 mA
Optimized for maximum OIP3 at 4.5V 280 mA
Freq (GHz) OIP3 Gain P1dB PAE Gamma Source Gamma Load
0.9 46.42 16.03 26.67 45.80 0.305 < -140 0.577 < 162
2.0 45.50 15.07 28.93 50.30 0.806 < -179.2 0.511 < 164
2.4 44.83 12.97 29.03 45.70 0.756 < -167 0.589 < -168
3.9 43.97 6.11 27.33 33.90 0.782 < -162 0.524 < -153
Typical Gammas at Optimum P1dB at 4.5V 280mA
Optimized for maximum P1dB at 4.5V 280 mA
Freq (GHz) OIP3 Gain P1dB PAE Gamma Source Gamma Load
0.9 39.29 20.90 30.49 41.00 0.859 < 165 0.757 < 179
2.0 41.79 14.72 30.60 45.30 0.76 < -171 0.691 < -168
2.4 42.37 11.25 30.24 39.70 0.745 < -166 0.694 < -161
3.9 42.00 5.63 28.26 25.80 0.759 < -159 0.708 < -149
RF Input
2.2 µF
Gate
Supply
Drain
Supply
15 Ohm
15 nH
1.8 nH
1.2 pF 50 Ohm
.02
50 Ohm
.02
110 Ohm
.03
110 Ohm
.03 1.2 pF
3.3 nH
RF Outpu
t
47 nH
2.2 µF
DUT
Typical Gammas at Optimum OIP3 at 4.5V 400 mA
Optimized for maximum OIP3 at 4.5V 400 mA
Freq (GHz) OIP3 Gain P1dB PAE Gamma Source Gamma Load
0.9 49.15 16.85 27.86 44.20 0.5852 < -135.80 0.4785 < 177.00
2.0 48.18 14.72 29.36 48.89 0.7267 < -175.37 0.7338 < 179.56
2.4 47.54 12.47 29.10 46.83 0.6155 < -171.71 0.5411 < -172.02
3.9 45.44 8.05 28.49 37.02 0.7888 < -148.43 0.5247 < -145.84
Typical Gammas at Optimum P1dB at 4.5V 400 mA
Optimized for maximum P1dB at 4.5V 400 mA
Freq (GHz) OIP3 Gain P1dB PAE Gamma Source Gamma Load
0.9 41.78 21.84 31.23 49.97 0.7765 < 168.50 0.7589 < -175.09
2.0 43.28 14.83 31.03 44.78 0.8172 < -175.74 0.8011 < -165.75
2.4 42.46 11.90 30.66 41.00 0.8149 < -163.78 0.8042 < -161.79
3.9 42.94 7.70 29.56 33.06 0.8394 < -151.21 0.7826 < -149.00
5
ATF-501P8 Typical Performance Curves (at 25°C unless specied otherwise)
Tuned for Optimal OIP3 at 4.5V 280 mA
Figure 8. OIP3 vs. Idq and Vds at 2 GHz.
Idq (mA)
OIP3 (dBm)
200 640240 280 320 360 400 440 480 520 560 600
55
50
45
40
35
30
4.5V
5.5V
3.5V
Figure 9. OIP3 vs. Idq and Vds at 0.9 GHz.
Idq (mA)
OIP3 (dBm)
200 640240 280 320 360 400 440 480 520 560 600
55
50
45
40
35
30
4.5V
5.5V
3.5V
Figure 10. P1dB vs. Idq and Vds at 2 GHz.
Idq (mA)
P1dB (dBm)
200 640240 280 320 360 400 440 480 520 560 600
35
30
25
20
15
4.5V
5.5V
3.5V
Figure 11. P1dB vs. Idq and Vds at 0.9 GHz.
Idq (mA)
P1dB (dBm)
200 640240 280 320 360 400 440 480 520 560 600
35
30
25
20
15
4.5V
5.5V
3.5V
Figure 12. Gain vs. Idq and Vds at 2 GHz.
Idq (mA)
GAIN (dB)
200 640240 280 320 360 400 440 480 520 560 600
25
20
15
10
5
0
4.5V
5.5V
3.5V
Figure 13. Gain vs. Idq and Vds at 0.9 GHz.
Idq (mA)
GAIN (dB)
200 640240 280 320 360 400 440 480 520 560 600
25
20
15
10
5
0
4.5V
5.5V
3.5V
Figure 14. PAE vs. Idq and Vds at 2 GHz.
Idq (mA)
PAE (%)
200 640240 280 320 360 400 440 480 520 560 600
60
50
40
30
20
10
0
4.5V
5.5V
3.5V
Figure 15. PAE vs. Idq and Vds at 0.9 GHz.
Idq (mA)
PAE (%)
200 640240 280 320 360 400 440 480 520 560 600
60
50
40
30
20
10
0
4.5V
5.5V
3.5V
6
ATF-501P8 Typical Performance Curves (at 25°C unless specied otherwise)
Tuned for Optimal P1dB at 4.5V 280 mA
Figure 16. OIP3 vs. Idq and Vds at 2 GHz.
Idq (mA)
OIP3 (dBm)
200 640240 280 320 360 400 440 480 520 560 600
55
50
45
40
35
30
4.5V
5.5V
3.5V
Figure 17. OIP3 vs. Idq and Vds at 0.9 GHz.
Idq (mA)
OIP3 (dBm)
200 640240 280 320 360 400 440 480 520 560 600
55
50
45
40
35
30
4.5V
5.5V
3.5V
Figure 18. P1dB vs. Idq and Vds at 2 GHz.
Idq (mA)
P1dB (dBm)
200 640240 280 320 360 400 440 480 520 560 600
35
30
25
20
15
4.5V
5.5V
3.5V
Figure 19. P1dB vs. Idq and Vds at 0.9 GHz.
Idq (mA)
P1dB (dBm)
200 640240 280 320 360 400 440 480 520 560 600
35
30
25
20
15
4.5V
5.5V
3.5V
Figure 20. Gain vs. Idq and Vds at 2 GHz.
Idq (mA)
GAIN (dB)
200 640240 280 320 360 400 440 480 520 560 600
25
20
15
10
5
0
4.5V
5.5V
3.5V
Figure 21. Gain vs. Idq and Vds at 0.9 GHz.
Idq (mA)
GAIN (dB)
200 640240 280 320 360 400 440 480 520 560 600
25
20
15
10
5
0
4.5V
5.5V
3.5V
Figure 22. PAE vs. Idq and Vds at 2 GHz.
Idq (mA)
PAE (%)
200 640240 280 320 360 400 440 480 520 560 600
60
50
40
30
20
10
0
4.5V
5.5V
3.5V
Figure 23. PAE vs. Idq and Vds at 0.9 GHz.
Idq (mA)
PAE (%)
200 640240 280 320 360 400 440 480 520 560 600
60
50
40
30
20
10
0
4.5V
5.5V
3.5V
7
ATF-501P8 Typical Performance Curves (at 25°C unless specied otherwise)
Tuned for Optimum OIP3 at 4.5V 280 mA
Figure 24. OIP3 vs. Temperature and Frequency
at Optimal OIP3.
FREQUENCY (GHz)
OIP3 (dBm)
0.5 41 1.5 2 2.5 3 3.5
50
40
30
20
10
0
-40C
25C
85C
Figure 25. OIP3 vs. Temperature and
Frequency at Optimal P1dB.
FREQUENCY (GHz)
OIP3 (dBm)
0.5 41 1.5 2 2.5 3 3.5
50
40
30
20
10
0
-40C
25C
85C
Figure 26. P1dB vs. Temperature and
Frequency at Optimal OIP3.
FREQUENCY (GHz)
P1dB (dBm)
0.5 41 1.5 2 2.5 3 3.5
35
30
25
20
15
-40C
25C
85C
Figure 27. P1dB vs. Temperature and
Frequency at Optimal P1dB.
FREQUENCY (GHz)
P1dB (dBm)
0.5 41 1.5 2 2.5 3 3.5
35
30
25
20
15
-40C
25C
85C
Figure 28. Gain vs. Temperature and
Frequency at Optimal OIP3.
FREQUENCY (GHz)
GAIN (dB)
0.5 41 1.5 2 2.5 3 3.5
20
15
10
5
0
-40C
25C
85C
Figure 29. Gain vs. Temperature and
Frequency at Optimal P1dB.
FREQUENCY (GHz)
GAIN (dB)
0.5 41 1.5 2 2.5 3 3.5
25
20
15
10
5
0
-40C
25C
85C
Figure 30. PAE vs. Temperature and
Frequency at Optimal OIP3.
FREQUENCY (GHz)
PAE (%)
0.5 41 1.5 2 2.5 3 3.5
60
50
40
30
20
10
0
-40C
25C
85C
Figure 31. PAE vs. Temperature and
Frequency at Optimal P1dB.
FREQUENCY (GHz)
PAE (%)
0.5 41 1.5 2 2.5 3 3.5
100
80
60
40
20
0
-40C
25C
85C
8
ATF-501P8 Typical Performance Curves (at 25°C unless specied otherwise)
Tuned for Optimal OIP3 at 4.5V 400 mA
Note:
Bias current (Ids) for the above charts are quiescent conditions.
Actual level may increase or decrease depending on amount of RF drive.
9
Figure 41. OIP3 vs. Temperature and
Frequency at optimum P1dB.
FREQUENCY (GHz)
OIP3 (dBm)
0.5 41 1.5 2 2.5 3 3.5
0.5 41 1.5 2 2.5 3 3.5
0.5 41 1.5 2 2.5 3 3.5 0.5 41 1.5 2 2.5 3 3.5
50
40
30
20
10
0
Figure 42. P1dB vs. Temperature and
Frequency at optimum OIP3.
FREQUENCY (GHz)
P1dB (dBm)
35
30
25
20
15
Figure 43. P1dB vs. Temperature and
Frequency at optimum P1dB.
FREQUENCY (GHz)
P1dB (dBm)
35
30
25
20
15
Figure 44. Gain vs. Temperature and
Frequency at optimum OIP3.
FREQUENCY (GHz)
GAIN (dB)
20
15
10
5
0
Figure 45. Gain vs. Temperature and
Frequency at optimum P1dB.
FREQUENCY (GHz)
GAIN (dB)
-40C
25C
85C
-40C
25C
85C
-40C
25C
85C
-40C
25C
85C
0.5 41 1.5 2 2.5 3 3.5
-40C
25C
85C
25
20
15
10
5
0
0.5 41 1.5 2 2.5 3 3.5
Figure 47. PAE vs. Temperature and
Frequency at optimum P1dB.
FREQUENCY (GHz)
PAE (%)
100
80
60
40
20
0
-40C
25C
85C
Figure 48. OIP3 vs. Ids and Vds at 2 GHz.
Ids (mA)
OIP3 (dBm)
200 640240 280 320 360 400 440 480 520 560 600
55
50
45
40
35
30
4.5V
5.5V
3.5V
0.5 41 1.5 2 2.5 3 3.5
Figure 46. PAE vs. Temperature and
Frequency at optimum OIP3.
FREQUENCY (GHz)
PAE (%)
100
80
60
40
20
0
-40C
25C
85C
Figure 49. OIP3 vs. Ids and Vds at 900 MHz.
Ids (mA)
OIP3 (dBm)
200 640240 280 320 360 400 440 480 520 560 600
55
50
45
40
35
30
4.5V
5.5V
3.5V
ATF-501P8 Typical Performance Curves, continued (at 25°C unless specied otherwise)
Tuned for Optimal OIP3 at 4.5V 400 mA
Note:
Bias current (Ids) for the above charts are quiescent conditions.
Actual level may increase or decrease depending on amount of RF drive.
10
Figure 50. P1dB vs. Ids and Vds at 2 GHz.
Ids (mA)
P1dB (dBm)
200 640240 280 320 360 400 440 480 520 560 600
35
30
25
20
15
4.5V
5.5V
3.5V
Figure 51. P1dB vs. Ids and Vds at 900 MHz.
Ids (mA)
P1dB (dBm)
200 640240 280 320 360 400 440 480 520 560 600
35
30
25
20
15
4.5V
5.5V
3.5V
Figure 52. Gain vs. Ids and Vds at 2 GHz.
Ids (mA)
GAIN
200 640240 280 320 360 400 440 480 520 560 600
25
20
15
10
5
0
4.5V
5.5V
3.5V
Figure 53. Gain vs. Ids and Vds at 900 MHz.
Ids (mA)
GAIN
200 640240 280 320 360 400 440 480 520 560 600
30
25
20
15
10
5
4.5V
5.5V
3.5V
Figure 54. PAE vs. Ids and Vds at 2 GHz.
Ids (mA)
PAE (%)
200 640240 280 320 360 400 440 480 520 560 600
60
50
40
30
20
10
0
4.5V
5.5V
3.5V
Figure 55. PAE vs. Ids and Vds at 900 MHz.
Ids (mA)
PAE (%)
200 640240 280 320 360 400 440 480 520 560 600
80
60
40
20
0
4.5V
5.5V
3.5V
ATF-501P8 Typical Performance Curves, continued (at 25°C unless specied otherwise)
Tuned for Optimal P1dB at 4.5V 400 mA
Note:
Bias current (Ids) for the above charts are quiescent conditions.
Actual level may increase or decrease depending on amount of RF drive.
11
Notes:
1. S parameter is measured on a microstrip
line made on 0.025 inch thick alumina
carrier. The input reference plane is at the
end of the gate lead. The output reference
plane is at the end of the drain lead.
ATF-501P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 280 mA
Freq. S11 S21 S12 S22
MSG/MAG K
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB factor
0.1 0.915 -132.3 31.6 37.990 112.2 -38.4 0.012 29.3 0.647 -160.6 35.0 0.173
0.2 0.911 -156.2 26.2 20.324 99.9 -37.7 0.013 24.0 0.689 -171.1 31.9 0.314
0.3 0.910 -165.4 22.8 13.783 94.5 -37.1 0.014 24.5 0.699 -175.7 29.9 0.436
0.4 0.910 -170.9 20.3 10.342 91.1 -37.1 0.014 27.3 0.702 -178.5 28.7 0.569
0.5 0.908 -173.4 18.7 8.604 88.4 -36.5 0.015 29.6 0.691 -179.9 27.6 0.648
0.6 0.907 -176.1 17.1 7.194 86.1 -35.9 0.016 32.4 0.691 178.5 26.5 0.736
0.7 0.908 -178.5 15.8 6.167 84.1 -35.4 0.017 34.4 0.694 177.2 25.6 0.800
0.8 0.905 179.8 14.7 5.407 82.1 -34.9 0.018 36.3 0.695 175.2 24.8 0.871
0.9 0.909 178.2 13.6 4.799 80.3 -34.4 0.019 38.3 0.692 175.1 24.0 0.906
1 0.909 176.6 12.7 4.308 78.3 -34.0 0.020 39.9 0.692 173.9 23.3 0.953
1.5 0.902 170.5 9.1 2.859 70.3 -31.7 0.026 45.0 0.698 169.4 18.2 1.128
2 0.902 166.0 7.1 2.264 64.4 -30.5 0.030 46.9 0.700 165.6 16.0 1.209
2.5 0.901 165.0 6.6 2.134 63.1 -30.2 0.031 47.2 0.699 163.0 15.4 1.241
3 0.901 161.1 5.0 1.772 57.7 -28.9 0.036 47.4 0.697 159.1 13.8 1.278
4 0.898 155.0 3.0 1.412 49.3 -27.3 0.043 46.5 0.707 153.7 11.7 1.326
5 0.902 145.0 0.9 1.110 37.6 -24.7 0.058 43.5 0.699 146.8 9.7 1.272
6 0.893 134.9 -0.9 0.902 22.6 -22.9 0.072 35.6 0.697 145.3 7.8 1.286
7 0.899 125.8 -3.3 0.687 9.0 -22.2 0.078 27.3 0.652 134.1 5.7 1.394
8 0.895 115.6 -4.4 0.604 -1.1 -20.8 0.091 22.0 0.646 117.4 4.2 1.463
9 0.898 105.5 -5.3 0.542 -13.0 -19.6 0.105 12.3 0.641 115.5 3.2 1.447
10 0.886 95.5 -5.9 0.505 -20.2 -18.9 0.114 9.7 0.695 104.5 2.5 1.455
11 0.868 84.7 -6.6 0.469 -29.7 -17.6 0.132 0.5 0.742 91.3 1.6 1.431
12 0.862 74.0 -8.0 0.398 -40.8 -17.4 0.135 -6.3 0.735 88.1 -0.1 1.661
13 0.847 64.5 -7.9 0.403 -47.5 -16.0 0.159 -12.3 0.766 78.4 -0.1 1.491
14 0.844 55.6 -8.5 0.377 -58.4 -15.3 0.171 -21.3 0.800 68.9 -0.3 1.397
15 0.837 47.4 -9.0 0.354 -67.2 -14.6 0.187 -30.1 0.797 65.6 -1.1 1.414
16 0.824 39.9 -9.7 0.327 -72.0 -14.2 0.194 -36.8 0.763 51.5 -2.3 1.608
17 0.821 31.6 -9.8 0.323 -82.7 -13.4 0.215 -44.6 0.786 38.9 -2.4 1.488
18 0.805 24.6 -10.5 0.298 -90.1 -12.5 0.237 -51.8 0.781 29.5 -3.5 1.575
Figure 56. MSG/MAG & |S21|2 vs. Frequency at
4.5V 280mA.
FREQUENCY (GHz)
MSG/MAG & |S21|
2
(dB)
0 182 4 6 8 10 12 14 16
40
30
20
10
0
-10
-20
S21
MSG
MAG
12
ATF-501P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 200 mA
Freq. S11 S21 S12 S22
MSG/MAG K
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB factor
0.1 0.922 -131.5 31.1 35.978 112.6 -37.7 0.013 28.9 0.664 -159.8 34.4 0.142
0.2 0.914 -155.7 25.7 19.290 100.1 -36.5 0.015 22.4 0.709 -170.7 31.1 0.274
0.3 0.914 -165.2 22.3 13.088 94.7 -36.5 0.015 22.5 0.719 -175.4 29.4 0.390
0.4 0.911 -170.5 19.8 9.814 91.4 -35.9 0.016 24.9 0.722 -178.4 27.9 0.510
0.5 0.911 -173.3 18.3 8.176 88.6 -35.4 0.017 26.8 0.713 -179.9 26.8 0.577
0.6 0.912 -176.0 16.7 6.834 86.4 -34.9 0.018 29.3 0.713 178.6 25.8 0.653
0.7 0.910 -178.3 15.4 5.861 84.3 -34.4 0.019 31.3 0.716 177.2 24.9 0.725
0.8 0.910 179.9 14.2 5.141 82.3 -34.4 0.019 33.0 0.718 175.5 24.3 0.801
0.9 0.913 178.4 13.2 4.558 80.5 -34.0 0.020 34.9 0.712 175.0 23.6 0.840
1 0.910 176.8 12.2 4.092 78.7 -33.6 0.021 36.6 0.714 173.8 22.9 0.903
1.5 0.904 170.5 8.7 2.718 70.5 -31.4 0.027 41.7 0.721 169.0 18.3 1.077
2 0.905 166.1 6.7 2.153 64.9 -30.2 0.031 44.2 0.721 165.2 16.0 1.161
2.5 0.905 165.2 6.1 2.027 63.7 -29.9 0.032 44.5 0.719 162.5 15.4 1.188
3 0.906 161.1 4.5 1.684 58.3 -28.6 0.037 44.9 0.715 158.5 13.7 1.227
4 0.905 154.9 2.6 1.354 50.3 -27.1 0.044 44.3 0.725 152.9 11.8 1.262
5 0.904 145.1 0.4 1.053 38.5 -24.7 0.058 41.6 0.716 145.7 9.5 1.271
6 0.899 134.9 -1.3 0.863 23.9 -22.9 0.072 34.1 0.712 144.1 7.7 1.263
7 0.905 126.0 -3.6 0.661 10.5 -22.2 0.078 26.0 0.660 132.9 5.6 1.371
8 0.902 115.8 -4.6 0.587 0.3 -20.8 0.091 20.8 0.654 116.3 4.2 1.423
9 0.900 106.4 -5.6 0.527 -11.1 -19.6 0.105 11.1 0.649 114.4 3.0 1.451
10 0.894 95.9 -6.1 0.498 -17.7 -18.9 0.114 8.4 0.700 103.4 2.6 1.412
11 0.882 84.9 -7.0 0.448 -26.8 -17.7 0.130 -0.9 0.746 90.5 1.6 1.407
12 0.873 74.3 -8.1 0.393 -38.8 -17.5 0.133 -7.5 0.738 87.3 0.1 1.614
13 0.856 64.6 -8.1 0.393 -45.4 -16.1 0.156 -13.1 0.768 77.8 -0.1 1.492
14 0.853 56.0 -8.4 0.380 -55.0 -15.6 0.166 -21.4 0.800 68.4 -0.2 1.399
15 0.837 47.4 -8.8 0.361 -64.1 -14.8 0.182 -29.6 0.799 65.2 -1.0 1.439
16 0.829 40.6 -9.2 0.345 -72.0 -14.4 0.190 -35.9 0.763 51.1 -1.8 1.556
17 0.828 32.7 -9.5 0.336 -80.5 -13.4 0.213 -43.3 0.787 38.5 -2.0 1.449
18 0.807 26.1 -10.2 0.310 -88.2 -12.5 0.236 -50.5 0.782 29.1 -3.2 1.542
Notes:
1. S parameter is measured on a microstrip
line made on 0.025 inch thick alumina
carrier. The input reference plane is at the
end of the gate lead. The output reference
plane is at the end of the drain lead.
Figure 57. MSG/MAG & |S21|2 vs. Frequency at
4.5V 200mA.
FREQUENCY (GHz)
MSG/MAG & |S21|
2
(dB)
0 182 4 6 8 10 12 14 16
40
30
20
10
0
-10
-20
S21
MSG
MAG
13
Notes:
1. S parameter is measured on a microstrip
line made on 0.025 inch thick alumina
carrier. The input reference plane is at the
end of the gate lead. The output reference
plane is at the end of the drain lead.
ATF-501P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 360 mA
Freq. S11 S21 S12 S22
MSG/MAG K
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB factor
0.1 0.911 -132.8 31.6 38.110 112.4 -39.2 0.011 30.3 0.649 -162.1 35.4 0.200
0.2 0.910 -156.5 26.2 20.415 100.0 -38.4 0.012 24.9 0.692 -171.8 32.3 0.340
0.3 0.911 -165.8 22.8 13.848 94.6 -37.7 0.013 26.2 0.701 -176.2 30.3 0.472
0.4 0.913 -171.1 20.3 10.397 91.3 -37.7 0.013 28.9 0.704 -178.9 29.0 0.600
0.5 0.907 -173.7 18.7 8.640 88.5 -36.5 0.015 31.8 0.693 179.7 27.6 0.679
0.6 0.910 -176.3 17.2 7.232 86.2 -35.9 0.016 34.5 0.694 178.2 26.6 0.747
0.7 0.910 -178.6 15.8 6.200 84.2 -35.9 0.016 36.8 0.696 176.9 25.9 0.838
0.8 0.906 179.7 14.7 5.431 82.2 -35.4 0.017 38.8 0.697 175.6 25.0 0.914
0.9 0.913 178.0 13.7 4.826 80.3 -34.9 0.018 40.6 0.695 174.8 24.3 0.930
1 0.907 176.4 12.7 4.328 78.4 -34.0 0.020 42.3 0.694 173.7 23.4 0.984
1.5 0.904 170.3 9.2 2.878 70.4 -32.0 0.025 47.0 0.698 169.4 18.2 1.154
2 0.906 165.9 7.1 2.275 64.5 -30.5 0.030 48.7 0.702 165.5 16.1 1.193
2.5 0.904 164.8 6.6 2.146 63.2 -30.2 0.031 49.0 0.701 162.8 15.5 1.231
3 0.907 160.9 5.0 1.783 57.9 -28.9 0.036 49.0 0.699 159.0 14.0 1.246
4 0.906 154.7 3.1 1.424 49.4 -27.3 0.043 47.7 0.708 153.6 12.0 1.275
5 0.903 144.8 0.9 1.114 37.7 -24.7 0.058 44.2 0.701 146.7 9.7 1.268
6 0.896 134.7 -0.8 0.907 22.7 -22.7 0.073 36.2 0.699 145.1 7.9 1.256
7 0.903 125.6 -3.2 0.691 8.9 -22.2 0.078 27.9 0.654 134.0 5.9 1.355
8 0.903 115.0 -4.3 0.612 -1.0 -20.7 0.092 22.4 0.647 117.3 4.6 1.375
9 0.891 105.6 -5.3 0.544 -13.3 -19.5 0.106 12.8 0.642 115.4 2.9 1.495
10 0.885 94.9 -6.0 0.504 -20.0 -18.8 0.115 10.2 0.697 104.4 2.4 1.462
11 0.873 84.3 -6.7 0.465 -28.4 -17.5 0.133 0.9 0.743 91.3 1.6 1.416
12 0.866 74.0 -7.9 0.403 -41.1 -17.3 0.137 -5.8 0.735 87.9 0.1 1.607
13 0.849 64.3 -7.8 0.406 -47.3 -15.9 0.161 -12.1 0.768 78.3 0.0 1.464
14 0.849 55.7 -8.4 0.379 -57.9 -15.2 0.174 -21.3 0.801 68.8 -0.2 1.361
15 0.841 46.6 -9.0 0.353 -69.0 -14.5 0.189 -30.3 0.800 65.5 -0.9 1.376
16 0.828 39.0 -9.4 0.337 -73.1 -14.2 0.196 -37.1 0.763 51.4 -2.0 1.547
17 0.817 31.0 -9.8 0.322 -83.0 -13.2 0.218 -45.1 0.787 38.7 -2.4 1.491
18 0.809 23.9 -10.3 0.304 -92.7 -12.4 0.240 -52.4 0.783 29.3 -3.2 1.513
Figure 58. MSG/MAG & |S21|2 vs. Frequency at
4.5V 360mA.
FREQUENCY (GHz)
MSG/MAG & |S21|2 (dB)
0 182 4 6 8 10 12 14 16
40
30
20
10
0
-10
-20
S21
MSG
MAG
14
Notes:
1. S parameter is measured on a microstrip
line made on 0.025 inch thick alumina
carrier. The input reference plane is at the
end of the gate lead. The output reference
plane is at the end of the drain lead.
ATF-501P8 Typical Scattering Parameters, VDS = 3.5V, IDS = 280 mA
Freq. S11 S21 S12 S22
MSG/MAG K
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB factor
0.1 0.923 -133.9 30.6 34.047 111.6 -38.4 0.012 28.8 0.716 -164.7 34.5 0.166
0.2 0.922 -157.1 25.2 18.161 99.7 -37.7 0.013 23.8 0.759 -173.4 31.5 0.301
0.3 0.920 -166.1 21.8 12.313 94.5 -37.1 0.014 25.0 0.767 -177.3 29.4 0.427
0.4 0.920 -171.3 19.3 9.220 91.4 -37.1 0.014 27.5 0.770 -179.8 28.2 0.549
0.5 0.915 -173.9 17.7 7.674 88.7 -35.9 0.016 30.0 0.760 178.8 26.8 0.622
0.6 0.917 -176.5 16.2 6.429 86.6 -35.4 0.017 32.9 0.761 177.2 25.8 0.697
0.7 0.917 -178.9 14.8 5.511 84.6 -34.9 0.018 34.8 0.762 175.8 24.9 0.761
0.8 0.915 179.6 13.6 4.813 82.8 -34.9 0.018 37.2 0.760 175.0 24.3 0.843
0.9 0.918 177.7 12.7 4.302 81.0 -34.4 0.019 38.8 0.764 173.7 23.5 0.877
1 0.913 176.4 11.7 3.850 79.1 -33.6 0.021 40.5 0.759 172.4 22.6 0.930
1.5 0.913 170.4 8.1 2.555 72.0 -31.4 0.027 45.6 0.759 168.1 18.1 1.070
2 0.913 166.1 6.1 2.025 66.3 -30.2 0.031 47.1 0.763 163.9 15.9 1.139
2.5 0.910 164.8 5.6 1.912 65.1 -29.9 0.032 47.6 0.762 161.0 15.2 1.181
3 0.913 160.9 4.0 1.588 60.4 -28.6 0.037 47.5 0.758 156.7 13.6 1.206
4 0.906 154.6 2.1 1.276 52.2 -26.9 0.045 45.9 0.762 150.9 11.5 1.261
5 0.910 144.7 0.1 1.012 41.6 -24.4 0.060 42.4 0.754 143.3 9.4 1.226
6 0.903 134.6 -1.6 0.827 27.2 -22.5 0.075 34.3 0.742 141.3 7.5 1.239
7 0.907 125.4 -3.9 0.636 14.0 -22.0 0.079 25.3 0.674 130.1 5.3 1.402
8 0.903 115.2 -4.9 0.570 5.1 -20.6 0.093 19.8 0.669 113.5 3.9 1.448
9 0.897 105.5 -5.6 0.522 -7.0 -19.4 0.107 9.9 0.666 112.0 2.8 1.484
10 0.889 94.8 -6.0 0.499 -14.5 -18.8 0.115 7.0 0.709 100.9 2.4 1.458
11 0.880 84.2 -6.4 0.477 -23.6 -17.7 0.131 -2.4 0.754 88.2 1.9 1.378
12 0.870 73.4 -7.7 0.411 -33.8 -17.6 0.132 -9.1 0.745 85.0 0.3 1.614
13 0.847 63.8 -7.5 0.421 -41.1 -16.3 0.153 -14.5 0.770 75.9 0.1 1.519
14 0.839 55.1 -8.0 0.397 -52.2 -15.8 0.163 -22.5 0.801 66.5 -0.1 1.458
15 0.816 47.3 -8.2 0.390 -63.9 -15.0 0.178 -30.0 0.795 63.4 -0.8 1.495
16 0.808 39.8 -9.2 0.345 -70.3 -14.6 0.186 -35.9 0.755 49.5 -2.3 1.727
17 0.794 32.3 -9.0 0.354 -81.5 -13.5 0.211 -43.3 0.787 36.6 -2.1 1.538
18 0.769 26.0 -9.7 0.329 -91.7 -12.6 0.234 -50.7 0.777 27.7 -3.2 1.632
Figure 59. MSG/MAG & |S21|2 vs. Frequency at
3.5V 280mA.
FREQUENCY (GHz)
MSG/MAG & |S21|2 (dB)
0 182 4 6 8 10 12 14 16
40
30
20
10
0
-10
-20
S21
MSG
MAG
15
Notes:
1. S parameter is measured on a microstrip
line made on 0.025 inch thick alumina
carrier. The input reference plane is at the
end of the gate lead. The output reference
plane is at the end of the drain lead.
ATF-501P8 Typical Scattering Parameters, VDS = 3.5V, IDS = 200 mA
Freq. S11 S21 S12 S22
MSG/MAG K
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB factor
0.1 0.924 -132.7 30.5 33.400 112.1 -37.1 0.014 28.4 0.703 -162.3 33.8 0.150
0.2 0.919 -156.5 25.0 17.862 99.9 -36.5 0.015 22.1 0.749 -172.1 30.8 0.269
0.3 0.918 -165.7 21.7 12.118 94.6 -36.5 0.015 22.7 0.757 -176.5 29.1 0.390
0.4 0.918 -171.0 19.2 9.080 91.4 -35.9 0.016 24.6 0.760 -179.2 27.5 0.496
0.5 0.918 -173.6 17.6 7.556 88.7 -35.4 0.017 26.4 0.751 179.4 26.5 0.559
0.6 0.915 -176.2 16.0 6.328 86.5 -34.9 0.018 29.3 0.752 177.7 25.5 0.651
0.7 0.915 -178.5 14.7 5.422 84.5 -34.4 0.019 31.3 0.753 176.3 24.6 0.717
0.8 0.914 179.8 13.5 4.739 82.7 -34.0 0.020 33.2 0.752 175.3 23.7 0.777
0.9 0.919 178.0 12.5 4.232 80.8 -33.6 0.021 35.1 0.755 174.1 23.0 0.806
1 0.916 176.7 11.6 3.788 79.0 -33.2 0.022 36.7 0.750 172.8 22.4 0.870
1.5 0.912 170.5 8.0 2.515 71.5 -31.4 0.027 42.0 0.750 168.3 18.2 1.057
1.9 0.911 166.0 6.0 1.991 65.8 -29.9 0.032 44.3 0.755 165.0 15.8 1.126
2 0.910 164.9 5.5 1.882 64.7 -29.6 0.033 44.7 0.753 164.2 15.2 1.157
2.4 0.911 160.9 3.9 1.562 59.7 -28.6 0.037 45.0 0.750 161.3 13.5 1.215
3 0.909 154.7 2.0 1.255 51.5 -26.9 0.045 43.9 0.754 157.0 11.5 1.244
4 0.911 144.8 -0.1 0.988 40.4 -24.4 0.060 41.0 0.746 151.3 9.3 1.225
5 0.902 134.8 -1.8 0.813 25.9 -22.6 0.074 33.3 0.735 143.7 7.4 1.255
6 0.904 125.5 -4.1 0.624 12.7 -22.0 0.079 24.6 0.669 141.8 5.0 1.438
7 0.904 115.6 -5.1 0.555 3.9 -20.6 0.093 19.3 0.664 130.6 3.8 1.455
8 0.901 105.6 -5.9 0.509 -8.3 -19.4 0.107 9.5 0.662 113.9 2.7 1.466
9 0.897 95.4 -6.4 0.477 -14.5 -18.8 0.115 6.6 0.705 112.3 2.3 1.437
10 0.880 84.1 -6.9 0.450 -23.9 -17.7 0.130 -3.0 0.751 101.2 1.5 1.429
11 0.872 73.7 -8.1 0.393 -34.0 -17.6 0.132 -9.7 0.742 88.5 0.0 1.646
12 0.849 64.2 -7.8 0.408 -42.5 -16.4 0.152 -14.9 0.767 85.3 0.0 1.539
13 0.841 55.5 -8.2 0.391 -53.2 -15.8 0.162 -22.8 0.798 76.2 -0.2 1.465
14 0.820 47.1 -8.5 0.377 -63.5 -15.1 0.176 -29.9 0.793 66.8 -1.0 1.527
15 0.809 39.3 -9.0 0.354 -69.5 -14.7 0.185 -35.9 0.754 63.6 -2.1 1.708
16 0.794 32.7 -9.1 0.350 -84.1 -13.6 0.210 -43.1 0.785 49.8 -2.1 1.543
17 0.770 25.8 -9.6 0.332 -89.0 -12.6 0.234 -50.5 0.776 36.9 -3.1 1.634
18 0.766 21.5 -9.2 0.346 -99.8 -11.5 0.266 -60.7 0.797 28.0 -2.6 1.394
Figure 60. MSG/MAG & |S21|2 vs. Frequency at
3.5V 200mA.
FREQUENCY (GHz)
MSG/MAG & |S21|2 (dB)
0 182 4 6 8 10 12 14 16
40
30
20
10
0
-10
-20
S21
MSG
MAG
16
ATF-501P8 Typical Scattering Parameters, VDS = 3.5V, IDS = 360 mA
Freq. S11 S21 S12 S22
MSG/MAG K
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB factor
0.1 0.919 -134.2 30.8 34.576 111.7 -39.2 0.011 29.6 0.722 -166.1 35.0 0.191
0.2 0.920 -157.3 25.3 18.445 99.7 -38.4 0.012 25.5 0.763 -174.1 31.9 0.336
0.3 0.921 -166.4 21.9 12.499 94.6 -37.7 0.013 26.7 0.771 -177.8 29.8 0.460
0.4 0.918 -171.4 19.4 9.372 91.5 -37.7 0.013 30.0 0.773 179.8 28.6 0.599
0.5 0.915 -174.0 17.8 7.792 88.8 -36.5 0.015 32.7 0.763 178.6 27.2 0.665
0.6 0.916 -176.7 16.3 6.537 86.6 -35.9 0.016 35.7 0.765 176.9 26.1 0.744
0.7 0.916 -178.9 15.0 5.596 84.7 -35.4 0.017 37.9 0.765 175.6 25.2 0.809
0.8 0.914 179.4 13.8 4.888 83.1 -34.9 0.018 40.0 0.764 174.9 24.3 0.871
0.9 0.919 178.1 12.8 4.370 81.1 -34.4 0.019 41.8 0.768 173.4 23.6 0.892
1 0.914 176.2 11.8 3.911 79.3 -34.0 0.020 43.0 0.762 172.2 22.9 0.963
1.5 0.912 170.2 8.3 2.596 72.2 -31.7 0.026 47.8 0.761 168.1 18.0 1.103
2 0.914 165.8 6.3 2.059 66.7 -30.2 0.031 49.2 0.766 163.8 15.9 1.142
2.5 0.910 164.7 5.8 1.940 65.6 -29.9 0.032 49.3 0.765 160.9 15.2 1.185
3 0.912 160.8 4.2 1.618 60.7 -28.6 0.037 49.0 0.761 156.6 13.6 1.210
4 0.913 154.4 2.3 1.296 52.9 -26.9 0.045 47.3 0.765 150.8 11.8 1.221
5 0.908 144.7 0.2 1.023 42.0 -24.4 0.060 43.2 0.756 143.0 9.4 1.236
6 0.903 134.5 -1.5 0.844 27.9 -22.5 0.075 34.8 0.745 141.1 7.6 1.233
7 0.906 125.5 -3.8 0.647 15.0 -21.9 0.080 25.7 0.676 129.9 5.3 1.392
8 0.904 115.1 -4.7 0.582 5.9 -20.6 0.093 20.3 0.670 113.3 4.1 1.430
9 0.902 105.3 -5.5 0.532 -6.4 -19.4 0.107 10.3 0.666 111.6 3.1 1.433
10 0.893 95.0 -5.8 0.513 -13.3 -18.8 0.115 7.5 0.710 100.7 2.7 1.416
11 0.881 84.1 -6.5 0.474 -22.0 -17.7 0.131 -1.9 0.756 88.2 1.9 1.388
12 0.873 73.6 -7.6 0.417 -32.9 -17.5 0.133 -8.5 0.746 84.9 0.5 1.577
13 0.847 63.9 -7.5 0.424 -40.6 -16.2 0.154 -13.9 0.772 75.7 0.2 1.507
14 0.844 55.4 -7.8 0.407 -52.7 -15.7 0.165 -22.0 0.802 66.3 0.1 1.407
15 0.827 47.4 -8.2 0.389 -63.7 -14.9 0.180 -29.7 0.793 63.2 -0.7 1.457
16 0.818 40.2 -8.9 0.357 -67.9 -14.6 0.187 -35.8 0.759 49.4 -1.9 1.637
17 0.799 32.9 -9.0 0.353 -81.4 -13.5 0.211 -43.1 0.786 36.5 -2.0 1.526
18 0.780 26.7 -9.3 0.344 -90.7 -12.5 0.236 -50.4 0.777 27.6 -2.7 1.549
Notes:
1. S parameter is measured on a microstrip
line made on 0.025 inch thick alumina
carrier. The input reference plane is at the
end of the gate lead. The output reference
plane is at the end of the drain lead.
Figure 61. MSG/MAG & |S21|
2
vs. Frequency at
3.5V 360mA.
FREQUENCY (GHz)
MSG/MAG & |S21|2 (dB)
0 182 4 6 8 10 12 14 16
40
30
20
10
0
-10
-20
S21
MSG
MAG
17
ATF-501P8 Typical Scattering Parameters, VDS = 5.5V, IDS = 280 mA
Freq. S11 S21 S12 S22
MSG/MAG K
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB factor
0.1 0.914 -131.5 31.8 39.087 112.6 -38.4 0.012 29.6 0.618 -158.7 35.1 0.172
0.2 0.912 -155.7 26.4 20.961 100.1 -37.7 0.013 23.9 0.661 -170.0 32.1 0.307
0.3 0.914 -165.2 23.1 14.228 94.5 -37.1 0.014 24.1 0.670 -174.9 30.1 0.420
0.4 0.913 -170.5 20.6 10.678 91.1 -37.1 0.014 26.7 0.674 -177.9 28.8 0.550
0.5 0.909 -173.3 19.0 8.871 88.3 -36.5 0.015 29.0 0.662 -179.3 27.7 0.638
0.6 0.910 -176.0 17.4 7.417 86.0 -35.9 0.016 31.7 0.663 179.2 26.7 0.715
0.7 0.911 -178.2 16.1 6.365 83.9 -35.4 0.017 34.3 0.666 177.8 25.7 0.782
0.8 0.908 -179.8 14.9 5.577 81.8 -34.9 0.018 36.0 0.667 176.3 24.9 0.850
0.9 0.913 178.4 13.9 4.956 79.9 -34.4 0.019 38.0 0.664 175.7 24.2 0.878
1 0.907 176.7 13.0 4.446 78.0 -34.0 0.020 39.4 0.664 174.5 23.5 0.958
1.5 0.903 170.5 9.4 2.951 69.6 -32.0 0.025 44.5 0.672 170.1 18.4 1.141
2 0.905 166.2 7.4 2.331 63.5 -30.5 0.030 46.4 0.674 166.5 16.3 1.182
2.5 0.903 165.2 6.8 2.197 62.1 -30.2 0.031 47.0 0.674 164.0 15.7 1.222
3 0.903 161.0 5.2 1.822 56.7 -29.1 0.035 47.3 0.672 160.3 14.0 1.284
4 0.900 154.7 3.3 1.455 47.9 -27.3 0.043 46.7 0.685 155.2 12.0 1.307
5 0.902 145.0 1.1 1.129 35.9 -24.9 0.057 43.8 0.679 148.6 9.8 1.278
6 0.895 134.9 -0.8 0.916 20.6 -23.0 0.071 36.2 0.681 147.0 8.0 1.271
7 0.903 125.8 -3.2 0.695 6.8 -22.3 0.077 28.3 0.648 135.8 6.1 1.340
8 0.898 115.4 -4.2 0.616 -3.5 -20.8 0.091 22.9 0.641 119.2 4.5 1.401
9 0.898 105.8 -5.3 0.546 -16.3 -19.6 0.105 13.3 0.636 117.2 3.3 1.416
10 0.884 95.4 -6.0 0.499 -23.2 -18.9 0.114 10.9 0.694 106.2 2.4 1.459
11 0.871 84.6 -6.8 0.458 -31.5 -17.6 0.132 1.6 0.741 92.7 1.6 1.420
12 0.864 74.2 -8.3 0.386 -43.6 -17.3 0.137 -5.2 0.731 89.5 -0.2 1.655
13 0.849 64.8 -8.3 0.385 -49.9 -15.8 0.162 -11.5 0.768 79.6 -0.3 1.479
14 0.854 56.1 -8.7 0.366 -60.4 -15.2 0.174 -20.9 0.804 70.2 -0.2 1.332
15 0.841 47.7 -9.6 0.330 -68.9 -14.4 0.191 -29.9 0.807 66.7 -1.3 1.385
16 0.834 40.0 -10.0 0.317 -73.5 -14.1 0.198 -37.0 0.768 52.4 -2.3 1.536
17 0.824 31.9 -10.2 0.310 -83.2 -13.2 0.219 -45.0 0.792 39.7 -2.5 1.466
18 0.813 24.7 -10.7 0.291 -88.9 -12.4 0.240 -52.2 0.788 30.0 -3.5 1.533
Notes:
1. S parameter is measured on a microstrip
line made on 0.025 inch thick alumina
carrier. The input reference plane is at the
end of the gate lead. The output reference
plane is at the end of the drain lead.
Figure 62. MSG/MAG & |S21|2 vs. Frequency at
5.5V 280mA.
FREQUENCY (GHz)
MSG/MAG & |S21|2 (dB)
0 182 4 6 8 10 12 14 16
40
30
20
10
0
-10
-20
S21
MSG
MAG
18
ATF-501P8 Typical Scattering Parameters, VDS = 5.5V, IDS = 200 mA
Freq. S11 S21 S12 S22
MSG/MAG K
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB factor
0.1 0.921 -130.1 31.8 38.725 113.1 -37.7 0.013 29.6 0.615 -156.5 34.7 0.145
0.2 0.914 -155.0 26.4 20.822 100.3 -37.1 0.014 22.8 0.659 -168.9 31.7 0.274
0.3 0.914 -164.6 23.0 14.136 94.7 -36.5 0.015 22.7 0.669 -174.1 29.7 0.385
0.4 0.913 -170.1 20.5 10.611 91.3 -36.5 0.015 24.9 0.673 -177.3 28.5 0.510
0.5 0.909 -172.9 18.9 8.824 88.4 -35.4 0.017 26.8 0.662 -178.9 27.2 0.576
0.6 0.909 -175.7 17.4 7.375 86.0 -35.4 0.017 29.4 0.662 179.6 26.4 0.672
0.7 0.909 -178.1 16.0 6.329 83.9 -34.9 0.018 31.3 0.665 178.2 25.5 0.739
0.8 0.908 -179.7 14.9 5.549 81.8 -34.4 0.019 32.9 0.667 176.5 24.7 0.798
0.9 0.911 178.5 13.8 4.922 80.0 -34.0 0.020 35.3 0.662 176.0 23.9 0.843
1 0.909 176.8 12.9 4.418 78.0 -33.6 0.021 36.4 0.664 174.8 23.2 0.897
1.5 0.905 170.8 9.3 2.933 69.4 -31.7 0.026 41.7 0.673 170.3 18.8 1.079
2 0.907 166.3 7.3 2.322 63.4 -30.5 0.030 44.3 0.674 166.6 16.5 1.153
2.5 0.903 165.3 6.8 2.182 62.1 -30.2 0.031 44.5 0.673 164.1 15.7 1.208
3 0.906 161.2 5.2 1.815 56.5 -28.9 0.036 45.1 0.671 160.4 14.2 1.226
4 0.903 155.0 3.2 1.447 47.8 -27.3 0.043 44.7 0.684 155.3 12.1 1.273
5 0.904 145.1 1.0 1.123 35.9 -24.9 0.057 42.3 0.678 148.7 9.9 1.257
6 0.899 135.2 -0.8 0.909 20.3 -23.0 0.071 35.1 0.681 147.2 8.2 1.235
7 0.904 126.2 -3.2 0.693 6.5 -22.4 0.076 27.4 0.647 136.0 6.2 1.332
8 0.901 115.6 -4.3 0.608 -4.0 -20.9 0.090 22.2 0.640 119.4 4.6 1.386
9 0.896 106.2 -5.4 0.536 -15.9 -19.7 0.104 12.6 0.634 117.5 3.1 1.459
10 0.891 95.4 -6.1 0.497 -23.9 -18.9 0.113 10.2 0.692 106.3 2.6 1.408
11 0.877 85.0 -7.0 0.446 -32.3 -17.7 0.131 1.0 0.739 92.9 1.5 1.403
12 0.871 74.4 -8.3 0.386 -42.5 -17.4 0.135 -5.8 0.730 89.7 -0.1 1.625
13 0.851 64.9 -8.2 0.387 -49.0 -15.9 0.160 -11.8 0.767 79.8 -0.3 1.480
14 0.850 56.2 -8.8 0.364 -60.0 -15.3 0.172 -21.0 0.803 70.5 -0.3 1.364
15 0.839 48.0 -9.5 0.335 -67.9 -14.5 0.188 -29.9 0.805 66.9 -1.3 1.403
16 0.834 39.7 -10.2 0.309 -72.5 -14.2 0.195 -36.8 0.768 52.7 -2.5 1.585
17 0.827 32.2 -10.2 0.309 -82.4 -13.3 0.216 -44.6 0.792 39.9 -2.5 1.472
18 0.814 24.4 -10.5 0.298 -89.4 -12.5 0.238 -51.8 0.790 30.2 -3.2 1.510
Notes:
1. S parameter is measured on a microstrip
line made on 0.025 inch thick alumina
carrier. The input reference plane is at the
end of the gate lead. The output reference
plane is at the end of the drain lead.
Figure 63. MSG/MAG & |S21|2 vs. Frequency at
5.5V 200mA.
FREQUENCY (GHz)
MSG/MAG & |S21|2 (dB)
0 182 4 6 8 10 12 14 16
40
30
20
10
0
-10
-20
S21
MSG
MAG
19
ATF-501P8 Typical Scattering Parameters, VDS = 5.5V, IDS = 360 mA
Freq. S11 S21 S12 S22
MSG/MAG K
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB factor
0.1 0.904 -132.0 31.8 38.785 113.0 -39.2 0.011 29.8 0.619 -159.9 35.5 0.198
0.2 0.910 -156.2 26.4 20.860 100.3 -38.4 0.012 24.8 0.662 -170.6 32.4 0.338
0.3 0.912 -165.4 23.0 14.161 94.7 -37.7 0.013 25.5 0.672 -175.3 30.4 0.459
0.4 0.912 -170.7 20.5 10.635 91.2 -37.1 0.014 27.8 0.675 -178.2 28.8 0.571
0.5 0.907 -173.5 18.9 8.834 88.4 -36.5 0.015 30.5 0.663 -179.5 27.7 0.666
0.6 0.909 -176.1 17.4 7.399 86.1 -35.9 0.016 33.4 0.664 178.9 26.7 0.741
0.7 0.909 -178.3 16.0 6.337 83.9 -35.4 0.017 35.7 0.666 177.6 25.7 0.808
0.8 0.907 179.9 14.9 5.557 81.9 -35.4 0.017 37.6 0.668 176.2 25.1 0.901
0.9 0.909 178.4 13.9 4.942 80.0 -34.9 0.018 39.7 0.665 175.5 24.4 0.943
1 0.906 176.7 12.9 4.429 78.0 -34.4 0.019 41.2 0.665 174.3 23.7 1.008
1.5 0.904 170.5 9.4 2.941 69.7 -32.0 0.025 46.2 0.672 170.1 18.4 1.150
2 0.904 166.1 7.3 2.325 63.6 -30.8 0.029 47.9 0.676 166.5 16.2 1.225
2.5 0.900 165.1 6.8 2.191 62.2 -30.2 0.031 48.4 0.675 163.9 15.5 1.254
3 0.905 161.0 5.2 1.817 56.6 -29.1 0.035 48.6 0.674 160.2 14.0 1.278
4 0.900 155.0 3.3 1.456 48.2 -27.5 0.042 47.4 0.686 155.1 12.0 1.329
5 0.904 144.9 1.1 1.130 35.7 -24.9 0.057 44.4 0.680 148.5 9.9 1.267
6 0.897 134.8 -0.8 0.913 20.7 -23.0 0.071 36.8 0.683 146.9 8.0 1.264
7 0.902 125.7 -3.2 0.695 7.3 -22.3 0.077 28.9 0.649 135.8 6.0 1.359
8 0.899 115.5 -4.3 0.609 -3.7 -20.8 0.091 23.4 0.643 119.1 4.5 1.402
9 0.893 105.9 -5.3 0.544 -16.0 -19.6 0.105 13.8 0.636 117.1 3.1 1.470
10 0.886 95.4 -6.0 0.499 -23.1 -18.9 0.114 11.7 0.696 106.1 2.4 1.447
11 0.867 85.0 -6.8 0.455 -31.7 -17.5 0.133 2.3 0.743 92.6 1.4 1.439
12 0.871 75.0 -8.2 0.389 -43.4 -17.2 0.138 -4.6 0.732 89.3 0.0 1.589
13 0.854 65.6 -8.2 0.387 -49.9 -15.7 0.164 -11.0 0.769 79.4 -0.2 1.436
14 0.855 56.8 -8.9 0.360 -61.2 -15.1 0.176 -20.4 0.805 70.0 -0.3 1.323
15 0.845 48.1 -9.6 0.330 -68.7 -14.3 0.192 -29.6 0.806 66.4 -1.3 1.371
16 0.842 40.7 -10.0 0.315 -72.5 -14.0 0.199 -36.7 0.769 52.1 -2.2 1.502
17 0.833 32.6 -10.2 0.309 -82.1 -13.2 0.220 -44.6 0.792 39.4 -2.4 1.436
18 0.826 25.5 -10.5 0.299 -87.9 -12.3 0.242 -51.8 0.789 29.7 -3.1 1.457
Notes:
1. S parameter is measured on a microstrip
line made on 0.025 inch thick alumina
carrier. The input reference plane is at the
end of the gate lead. The output reference
plane is at the end of the drain lead.
Figure 64. MSG/MAG & |S21|
2
vs. Frequency at
5.5V 360mA.
FREQUENCY (GHz)
MSG/MAG & |S21|2 (dB)
0 182 4 6 8 10 12 14 16
40
30
20
10
0
-10
-20
S21
MSG
MAG
20
2x 2 LPCC (JEDEC DFP-N) Package Dimensions
Ordering Information
Part Number No. of Devices Container
ATF-501P8-TR1 3000 7” Reel
ATF-501P8-TR2 10000 13”Reel
ATF-501P8-BLK 100 antistatic bag
Device Models
Refer to Avago’s Web Site
www.Avagotech.com/view/rf
D
E
8
7
6
5
A
D1
E1
P
e
pin1
R
Lb
DIMENSIONS ARE IN MILLIMETERS
DIMENSIONS
MIN.
0.70
0
0.203 REF
0.225
1.9
0.65
1.9
1.45
0.50 BSC
0.2
NOM.
0.75
0.02
0.203 REF
0.25
2.0
0.80
2.0
1.6
0.50 BSC
0.25
0.4 REF
MAX.
0.80
0.05
0.203 REF
0.275
2.1
0.95
2.1
1.75
0.50 BSC
0.3
SYMBOL
A
A1
A2
b
D
D1
E
E1
e
P
L
1
pin1
2
3
4
0PX
Top View
End View
End View
Bottom View
A2
AA1
21
Device Orientation
PCB Land Pattern and Stencil Design
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL
8 mm
4 mm
0PX0PX0PX0PX
2.80 (110.24)
0.70 (27.56)
0.25 (9.84)
0.25 (9.84)
0.50 (19.68)
0.28 (10.83)
0.60 (23.62)
f0.20 (7.87)
PIN 1
Solder
mask
RF
transmission
line 0.80 (31.50)
0.15 (5.91)
0.55 (21.65)
1.60 (62.99)
+
2.72 (107.09)
0.63 (24.80)
0.22 (8.86)
0.32 (12.79)
0.50 (19.68)
0.25 (9.74)
0.63 (24.80)
Stencil Layout (top view)
PCB Land Pattern (top view)
Notes:
Typical stencil thickness is 5 mils.
Measurements are in millimeters (mils).
0.72 (28.35)
PIN 1
1.54 (60.61)
Tape Dimensions
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. Obsoletes 5988-9767EN
AV02-1846EN - March 27, 2009
P0
P
F
W
D1
E
P2
A0
10 Max
t1
K0
DESCRIPTION SYMBOL SIZE (mm) SIZE (inches)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.30 ± 0.05
2.30 ± 0.05
1.00 ± 0.05
4.00 ± 0.10
1.00 + 0.25
0.091 ± 0.004
0.091 ± 0.004
0.039 ± 0.002
0.157 ± 0.004
0.039 + 0.002
CAVITY
DIAMETER
PITCH
POSITION
D
P0
E
1.50 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.060 ± 0.004
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS
W
t1
8.00 + 0.30
0.254 ± 0.02
0.315 ± 0.012
8.00 – 0.10 0.315 ± 0.004
0.010 ± 0.0008
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS
C
Tt
5.4 ± 0.10
0.062 ± 0.001
0.205 ± 0.004
0.0025 ± 0.0004
COVER TAPE
D
+ +
Tt
10 Max
B0