ATF-501P8 High Linearity Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Data Sheet Description Features Avago Technologies's ATF-501P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier (LPCC[3]) package. The device is ideal as a medium-power amplifier. Its operating frequency range is from 400 MHz to 3.9 GHz. * Single voltage operation The thermally efficient package measures only 2mm x 2mm x 0.75mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over 300 years at a mounting temperature of +85C. All devices are 100% RF & DC tested. * Small package size: 2.0 x 2.0 x 0.75 mm3 Notes: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Conforms to JEDEC reference outline MO229 for DRP-N. 4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power. Pin 8 Pin 7 (Drain) Pin 6 Pin 5 Source (Thermal/RF Gnd) Pin Connections and Package Marking Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source) Bottom View Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 8 0Px Pin 4 (Source) Pin 7 (Drain) Pin 6 * High Linearity and P1dB * Low Noise Figure * Excellent uniformity in product specifications * Point MTTF > 300 years[2] * MSL-1 and lead-free * Tape-and-Reel packaging option available Specifications * 2 GHz; 4.5V, 280 mA (Typ.) * 45.5 dBm Output IP3 * 29 dBm Output Power at 1dB gain compression * 1 dB Noise Figure * 15 dB Gain * 14.5 dB LFOM[4] * 65% PAE * 23oC/W thermal resistance Applications * Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier for Cellular/PCS and WCDMA wireless infrastructure * Driver Amplifier for WLAN, WLL/RLL and MMDS applications * General purpose discrete E-pHEMT for other high linearity applications Pin 5 Top View Note: Package marking provides orientation and identification: "0P" = Device Code "x" = Date code indicates the month of manufacture. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1C) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. ATF-501P8 Absolute Maximum Ratings[1] Symbol Parameter Units Absolute Maximum VDS Drain-Source Voltage[2] 7 VGS Gate-Source Voltage[2] V -5 to 0.8 VGD Gate Drain Voltage[2] V -5 to 1 IDS Drain Current[2] A 1 IGS Gate Current mA 12 V Pdiss Total Power W 3.5 Pin max. RF Input Power dBm 30 TCH Channel Temperature C 150 TSTG Storage Temperature C -65 to 150 C/W 23 ch_b Thermal Dissipation[3] Resistance[4] Notes: 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Board (package belly) temperatureTB is 25C. Derate 43.5 mW/C for TB > 69.5C. 4. Channel-to-board thermal resistance measured using 150C Liquid Crystal Measurement method. Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA [5,6] Vgs=0.7V 700 100 600 Cpk=1.76 Stdev=0.3 Cpk=1.51 Stdev=3.38 80 80 Vgs=0.6V -3 Std 60 400 300 Vgs=0.55V 200 Vgs=0.5V 100 0 100 Vgs=0.65V 500 Ids (mA) 120 120 800 0 1 2 3 4 5 6 40 20 20 0 27.5 28 28.5 29.5 30 30.5 0 45 55 +3 Std 65 75 85 PAE (%) Figure 3. PAE. Figure 2. P1dB. 100 100 Cpk=1.61 Stdev=0.33 80 -3 Std 60 +3 Std 40 40 20 20 0 13 29 -3 Std P1dB (dBm) Figure 1. Typical IV curve (Vgs = 0.01V) per step. 60 60 40 Vds (V) 80 +3 Std 14 15 16 17 0 42 Cpk=1.1 Stdev=0.87 -3 Std 43 44 45 46 47 48 49 50 OIP3 (dBm) GAIN (dB) Figure 4. Gain. +3 Std Figure 5. OIP3. Notes: 5. Distribution data sample size is 300 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 6. Measurements are made on production test board, which represents a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been deembedded from actual measurements. ATF-501P8 Electrical Specifications TA = 25C, DC bias for RF parameters is Vds = 4.5V and Ids = 280 mA unless otherwise specified. Symbol Parameter and Test Condition Units Min. Typ. Max. Vgs Operational Gate Voltage Vds = 4.5V, Ids = 280 mA V 0.42 0.55 0.67 Vth Threshold Voltage Vds = 4.5V, Ids = 32 mA V -- 0.33 -- Idss Saturated Drain Current Vds = 4.5V, Vgs = 0V A -- 5 -- -- 1872 -- Gm Transconductance Igss Gate Leakage Current Vds = 4.5V, Gm = Ids/Vgs; mmho Vgs = Vgs1 - Vgs2 Vgs1 = 0.55V, Vgs2 = 0.5V Vds = 0V, Vgs = -4.5V A -30 -0.8 -- NF Noise Figure [1] f = 2 GHz f = 900 MHz dB dB -- -- 1 -- -- -- G Gain[1] f = 2 GHz f = 900 MHz dB dB 13.5 -- 15 16.6 16.5 -- OIP3 Output 3rd Order Intercept Point[1,2] f = 900 MHz f = 2 GHz dBm dBm -- 43 42 45.5 -- -- P1dB Output 1dB Compressed[1] f = 2 GHz f = 900 MHz dBm dBm 27.5 -- 29 27.3 -- -- PAE Power Added Efficiency[1] f = 2 GHz f = 900 MHz % % 50 -- 65 49 -- -- ACLR Offset BW = 5 MHz Offset BW = 10 MHz dBc dBc -- -- 63.9 64.1 -- -- Adjacent Channel Leakage Power Ratio[1,3] Notes: 1. Measurements at 2 GHz obtained using production test board described in Figure 2 while measurement at 0.9GHz obtained from load pull tuner. 2. i ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz and Pin = -5 dBm per tone. ii ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 910 MHz and Pin = -5dBm per tone. 3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06) - Test Model 1 - Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128) - Freq = 2140 MHz - Pin = -5 dBm - Channel Integrate Bandwidth = 3.84 MHz 4. Use proper bias, board, heatsinking and derating designs to ensure max channel temperature is not exceeded. See absolute max ratings and application note for more details. Input 50 Ohm Transmission Line and Drain Bias T (0.3 dB loss) Input Matching Circuit _mag=0.79 _ang=-164 (1.1 dB loss) DUT Output Matching Circuit _mag=0.69 _ang=-163 (0.9 dB loss) 50 Ohm Transmission Line and Drain Bias T (0.3 dB loss) Output Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE measurements at 2 GHz. This circuit achieves a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. 1.8 nH 3.3 nH 50 Ohm .02 1.2 pF 110 Ohm .03 110 Ohm .03 50 Ohm .02 1.2 pF DUT RF Input RF Output 15 nH 47 nH 2.2 F 15 Ohm 2.2 F Gate Supply Drain Supply Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown. Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions The device's optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V 280 mA and 4.5V 400 mA quiesent bias respectively: Typical Gammas at Optimum OIP3 at 4.5V 280 mA Freq (GHz) Optimized for maximum OIP3 at 4.5V 280 mA OIP3 Gain P1dB PAE Gamma Source Gamma Load 0.9 46.42 16.03 26.67 45.80 0.305 < -140 0.577 < 162 2.0 45.50 15.07 28.93 50.30 0.806 < -179.2 0.511 < 164 2.4 44.83 12.97 29.03 45.70 0.756 < -167 0.589 < -168 3.9 43.97 6.11 27.33 33.90 0.782 < -162 0.524 < -153 Typical Gammas at Optimum P1dB at 4.5V 280mA Freq (GHz) Optimized for maximum P1dB at 4.5V 280 mA OIP3 Gain P1dB PAE Gamma Source Gamma Load 0.9 39.29 20.90 30.49 41.00 0.859 < 165 0.757 < 179 2.0 41.79 14.72 30.60 45.30 0.76 < -171 0.691 < -168 2.4 42.37 11.25 30.24 39.70 0.745 < -166 0.694 < -161 3.9 42.00 5.63 28.26 25.80 0.759 < -159 0.708 < -149 Typical Gammas at Optimum OIP3 at 4.5V 400 mA Freq (GHz) Optimized for maximum OIP3 at 4.5V 400 mA OIP3 Gain P1dB PAE Gamma Source Gamma Load 0.9 49.15 16.85 27.86 44.20 0.5852 < -135.80 0.4785 < 177.00 2.0 48.18 14.72 29.36 48.89 0.7267 < -175.37 0.7338 < 179.56 2.4 47.54 12.47 29.10 46.83 0.6155 < -171.71 0.5411 < -172.02 3.9 45.44 8.05 28.49 37.02 0.7888 < -148.43 0.5247 < -145.84 Typical Gammas at Optimum P1dB at 4.5V 400 mA Freq (GHz) Optimized for maximum P1dB at 4.5V 400 mA OIP3 Gain P1dB PAE Gamma Source Gamma Load 0.9 41.78 21.84 31.23 49.97 0.7765 < 168.50 0.7589 < -175.09 2.0 43.28 14.83 31.03 44.78 0.8172 < -175.74 0.8011 < -165.75 2.4 42.46 11.90 30.66 41.00 0.8149 < -163.78 0.8042 < -161.79 3.9 42.94 7.70 29.56 33.06 0.8394 < -151.21 0.7826 < -149.00 ATF-501P8 Typical Performance Curves (at 25C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V 280 mA 55 55 4.5V 5.5V 3.5V 45 40 45 40 35 35 30 30 200 240 280 320 360 400 440 480 520 560 600 640 25 15 10 0 0 Idq (mA) Idq (mA) Figure 12. Gain vs. Idq and Vds at 2 GHz. 60 50 50 40 40 PAE (%) 60 4.5V 5.5V 3.5V 30 20 10 10 0 0 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) Figure 14. PAE vs. Idq and Vds at 2 GHz. 10 5 200 240 280 320 360 400 440 480 520 560 600 640 30 15 5 200 240 280 320 360 400 440 480 520 560 600 640 4.5V 5.5V 3.5V 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) Figure 15. PAE vs. Idq and Vds at 0.9 GHz. 4.5V 5.5V 3.5V 20 GAIN (dB) P1dB (dBm) GAIN (dB) 4.5V 5.5V 3.5V Figure 11. P1dB vs. Idq and Vds at 0.9 GHz. PAE (%) Figure 10. P1dB vs. Idq and Vds at 2 GHz. 4.5V 5.5V 3.5V 20 15 Idq (mA) Figure 9. OIP3 vs. Idq and Vds at 0.9 GHz. 25 25 20 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) 30 4.5V 5.5V 3.5V 15 200 240 280 320 360 400 440 480 520 560 600 640 35 20 25 20 Idq (mA) Figure 8. OIP3 vs. Idq and Vds at 2 GHz. 30 P1dB (dBm) 50 OIP3 (dBm) OIP3 (dBm) 50 35 4.5V 5.5V 3.5V 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) Figure 13. Gain vs. Idq and Vds at 0.9 GHz. ATF-501P8 Typical Performance Curves (at 25C unless specified otherwise) Tuned for Optimal P1dB at 4.5V 280 mA 55 40 45 40 35 35 30 30 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) Idq (mA) 25 4.5V 5.5V 3.5V 15 15 10 0 0 Idq (mA) 50 50 40 40 PAE (%) 60 4.5V 5.5V 3.5V 20 30 10 10 0 0 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) Figure 22. PAE vs. Idq and Vds at 2 GHz. 4.5V 5.5V 3.5V 20 4.5V 5.5V 3.5V 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) Figure 20. Gain vs. Idq and Vds at 2 GHz. 60 30 10 5 Idq (mA) Figure 19. P1dB vs. Idq and Vds at 0.9 GHz. 15 5 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 20 GAIN (dB) 25 GAIN (dB) P1dB (dBm) Figure 18. P1dB vs. Idq and Vds at 2 GHz. 4.5V 5.5V 3.5V 20 20 PAE (%) 15 25 30 4.5V 5.5V 3.5V 20 Figure 17. OIP3 vs. Idq and Vds at 0.9 GHz. 35 25 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) Figure 16. OIP3 vs. Idq and Vds at 2 GHz. 30 P1dB (dBm) 45 4.5V 5.5V 3.5V 50 OIP3 (dBm) OIP3 (dBm) 50 35 55 4.5V 5.5V 3.5V 200 240 280 320 360 400 440 480 520 560 600 640 Idq (mA) Figure 23. PAE vs. Idq and Vds at 0.9 GHz. Figure 21. Gain vs. Idq and Vds at 0.9 GHz. 50 40 40 30 -40C 25C 85C 10 0 0.5 1 1.5 30 30 20 -40C 25C 85C 10 2 2.5 3 3.5 0.5 1 1.5 35 20 30 15 GAIN (dB) P1dB (dBm) 2.5 3 3.5 25 -40C 25C 85C 20 1.5 2 2.5 3 3.5 1 1.5 2 2.5 3 3.5 4 80 PAE (%) PAE (%) 40 30 -40C 25C 85C 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) Figure 30. PAE vs. Temperature and Frequency at Optimal OIP3. 60 -40C 25C 85C 40 20 10 3.5 4 0 0.5 4 3.5 4 -40C 25C 85C 10 1 1.5 2 2.5 0 0.5 1 1.5 2 2.5 3 Figure 29. Gain vs. Temperature and Frequency at Optimal P1dB. 100 50 3.5 15 FREQUENCY (GHz) Figure 28. Gain vs. Temperature and Frequency at Optimal OIP3. 60 3 5 FREQUENCY (GHz) Figure 27. P1dB vs. Temperature and Frequency at Optimal P1dB. 2.5 20 -40C 25C 85C 0.5 2 Figure 26. P1dB vs. Temperature and Frequency at Optimal OIP3. 10 0 4 1.5 25 FREQUENCY (GHz) 20 1 FREQUENCY (GHz) 5 1 0.5 4 Figure 25. OIP3 vs. Temperature and Frequency at Optimal P1dB. Figure 24. OIP3 vs. Temperature and Frequency at Optimal OIP3. 0.5 2 FREQUENCY (GHz) FREQUENCY (GHz) 15 -40C 25C 85C 15 0 4 25 20 GAIN (dB) 20 35 P1dB (dBm) 50 OIP3 (dBm) OIP3 (dBm) ATF-501P8 Typical Performance Curves (at 25C unless specified otherwise) Tuned for Optimum OIP3 at 4.5V 280 mA 3 FREQUENCY (GHz) Figure 31. PAE vs. Temperature and Frequency at Optimal P1dB. 3.5 4 ATF-501P8 Typical Performance Curves (at 25C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V 400 mA 55 4.5V 5.5V 3.5V 50 45 40 45 40 35 35 30 30 200 240 280 320 360 400 440 480 520 560 600 640 30 P1dB (dBm) OIP3 (dBm) 50 OIP3 (dBm) 35 55 4.5V 5.5V 3.5V 15 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Ids (mA) 25 25 20 20 15 15 10 4.5V 5.5V 3.5V 20 10 4.5V 5.5V 3.5V 5 15 0 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Ids (mA) Ids (mA) Figure 36. Gain vs. Ids and Vds at 2 GHz. 60 50 50 40 40 30 20 10 10 0 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Figure 38. PAE vs. Ids and Vds at 2 GHz. 50 40 30 20 4.5V 5.5V 3.5V Figure 37. Gain vs. Ids and Vds at 900 MHz. OIP3 (dBm) 60 PAE (%) PAE (%) Figure 35. P1dB vs. Ids and Vds at 900 MHz. 4.5V 5.5V 3.5V 5 0 200 240 280 320 360 400 440 480 520 560 600 640 4.5V 5.5V 3.5V 30 20 -40C 25C 85C 10 0 0 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Figure 39. PAE vs. Ids and Vds at 900 MHz. Note: Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. Figure 34. P1dB vs. Ids and Vds at 2 GHz. GAIN GAIN P1dB (dBm) 30 25 20 Figure 33. OIP3 vs. Ids and Vds at 900 MHz. 35 4.5V 5.5V 3.5V 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Figure 32. OIP3 vs. Ids and Vds at 2 GHz. 25 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) Figure 40. OIP3 vs. Temperature and Frequency at optimum OIP3. 3.5 4 ATF-501P8 Typical Performance Curves, continued (at 25C unless specified otherwise) Tuned for Optimal OIP3 at 4.5V 400 mA P1dB (dBm) 30 20 -40C 25C 85C 1 1.5 30 30 25 -40C 25C 85C 20 10 0 0.5 35 2 2.5 3 3.5 15 0.5 4 1 FREQUENCY (GHz) 10 -40C 25C 85C 3 3.5 15 0.5 4 1 1.5 2 2.5 3 3.5 20 80 15 60 10 -40C 25C 85C 1 1.5 2 2.5 3 3.5 0 0.5 4 OIP3 (dBm) 1 1.5 2 2.5 3 FREQUENCY (GHz) Figure 47. PAE vs. Temperature and Frequency at optimum P1dB. 3.5 4 3.5 4 -40C 25C 85C 1 1.5 2 2.5 3 3.5 4 Figure 46. PAE vs. Temperature and Frequency at optimum OIP3. 55 4.5V 5.5V 3.5V 50 20 3 FREQUENCY (GHz) 55 40 2.5 20 Figure 45. Gain vs. Temperature and Frequency at optimum P1dB. 60 2 40 FREQUENCY (GHz) -40C 25C 85C 1.5 Figure 43. P1dB vs. Temperature and Frequency at optimum P1dB. 100 0 0.5 4 100 80 1 FREQUENCY (GHz) 5 Figure 44. Gain vs. Temperature and Frequency at optimum OIP3. 45 40 45 40 35 30 30 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Figure 48. OIP3 vs. Ids and Vds at 2 GHz. 4.5V 5.5V 3.5V 50 35 Note: Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. 2.5 25 FREQUENCY (GHz) PAE (%) 2 PAE (%) GAIN (dB) GAIN (dB) 15 0 0.5 20 Figure 42. P1dB vs. Temperature and Frequency at optimum OIP3. 20 0 0.5 -40C 25C 85C FREQUENCY (GHz) Figure 41. OIP3 vs. Temperature and Frequency at optimum P1dB. 5 1.5 25 OIP3 (dBm) OIP3 (dBm) 40 35 P1dB (dBm) 50 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Figure 49. OIP3 vs. Ids and Vds at 900 MHz. 35 30 30 25 20 4.5V 5.5V 3.5V 25 20 GAIN 35 P1dB (dBm) P1dB (dBm) ATF-501P8 Typical Performance Curves, continued (at 25C unless specified otherwise) Tuned for Optimal P1dB at 4.5V 400 mA 25 20 4.5V 5.5V 3.5V 10 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Ids (mA) Figure 50. P1dB vs. Ids and Vds at 2 GHz. Figure 51. P1dB vs. Ids and Vds at 900 MHz. 30 4.5V 5.5V 3.5V 5 15 15 15 0 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Figure 52. Gain vs. Ids and Vds at 2 GHz. 80 60 50 25 60 15 4.5V 5.5V 3.5V 10 5 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Figure 53. Gain vs. Ids and Vds at 900 MHz. PAE (%) 20 PAE (%) GAIN 40 30 20 10 4.5V 5.5V 3.5V 20 4.5V 5.5V 3.5V 0 0 200 240 280 320 360 400 440 480 520 560 600 640 200 240 280 320 360 400 440 480 520 560 600 640 Ids (mA) Ids (mA) Figure 54. PAE vs. Ids and Vds at 2 GHz. Note: Bias current (Ids) for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. 10 40 Figure 55. PAE vs. Ids and Vds at 900 MHz. ATF-501P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 280 mA Freq. S11 GHz Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 37.990 20.324 13.783 10.342 8.604 7.194 6.167 5.407 4.799 4.308 2.859 2.264 2.134 1.772 1.412 1.110 0.902 0.687 0.604 0.542 0.505 0.469 0.398 0.403 0.377 0.354 0.327 0.323 0.298 -38.4 -37.7 -37.1 -37.1 -36.5 -35.9 -35.4 -34.9 -34.4 -34.0 -31.7 -30.5 -30.2 -28.9 -27.3 -24.7 -22.9 -22.2 -20.8 -19.6 -18.9 -17.6 -17.4 -16.0 -15.3 -14.6 -14.2 -13.4 -12.5 0.012 0.013 0.014 0.014 0.015 0.016 0.017 0.018 0.019 0.020 0.026 0.030 0.031 0.036 0.043 0.058 0.072 0.078 0.091 0.105 0.114 0.132 0.135 0.159 0.171 0.187 0.194 0.215 0.237 0.647 0.689 0.699 0.702 0.691 0.691 0.694 0.695 0.692 0.692 0.698 0.700 0.699 0.697 0.707 0.699 0.697 0.652 0.646 0.641 0.695 0.742 0.735 0.766 0.800 0.797 0.763 0.786 0.781 0.915 0.911 0.910 0.910 0.908 0.907 0.908 0.905 0.909 0.909 0.902 0.902 0.901 0.901 0.898 0.902 0.893 0.899 0.895 0.898 0.886 0.868 0.862 0.847 0.844 0.837 0.824 0.821 0.805 -132.3 -156.2 -165.4 -170.9 -173.4 -176.1 -178.5 179.8 178.2 176.6 170.5 166.0 165.0 161.1 155.0 145.0 134.9 125.8 115.6 105.5 95.5 84.7 74.0 64.5 55.6 47.4 39.9 31.6 24.6 31.6 26.2 22.8 20.3 18.7 17.1 15.8 14.7 13.6 12.7 9.1 7.1 6.6 5.0 3.0 0.9 -0.9 -3.3 -4.4 -5.3 -5.9 -6.6 -8.0 -7.9 -8.5 -9.0 -9.7 -9.8 -10.5 S21 MSG MAG MSG/MAG & |S21|2 (dB) 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 56. MSG/MAG & |S21|2 vs. Frequency at 4.5V 280mA. 11 29.3 24.0 24.5 27.3 29.6 32.4 34.4 36.3 38.3 39.9 45.0 46.9 47.2 47.4 46.5 43.5 35.6 27.3 22.0 12.3 9.7 0.5 -6.3 -12.3 -21.3 -30.1 -36.8 -44.6 -51.8 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 40 30 112.2 99.9 94.5 91.1 88.4 86.1 84.1 82.1 80.3 78.3 70.3 64.4 63.1 57.7 49.3 37.6 22.6 9.0 -1.1 -13.0 -20.2 -29.7 -40.8 -47.5 -58.4 -67.2 -72.0 -82.7 -90.1 S22 Ang. MSG/MAG dB K factor -160.6 -171.1 -175.7 -178.5 -179.9 178.5 177.2 175.2 175.1 173.9 169.4 165.6 163.0 159.1 153.7 146.8 145.3 134.1 117.4 115.5 104.5 91.3 88.1 78.4 68.9 65.6 51.5 38.9 29.5 35.0 31.9 29.9 28.7 27.6 26.5 25.6 24.8 24.0 23.3 18.2 16.0 15.4 13.8 11.7 9.7 7.8 5.7 4.2 3.2 2.5 1.6 -0.1 -0.1 -0.3 -1.1 -2.3 -2.4 -3.5 0.173 0.314 0.436 0.569 0.648 0.736 0.800 0.871 0.906 0.953 1.128 1.209 1.241 1.278 1.326 1.272 1.286 1.394 1.463 1.447 1.455 1.431 1.661 1.491 1.397 1.414 1.608 1.488 1.575 ATF-501P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 200 mA Freq. S11 GHz Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 35.978 19.290 13.088 9.814 8.176 6.834 5.861 5.141 4.558 4.092 2.718 2.153 2.027 1.684 1.354 1.053 0.863 0.661 0.587 0.527 0.498 0.448 0.393 0.393 0.380 0.361 0.345 0.336 0.310 -37.7 -36.5 -36.5 -35.9 -35.4 -34.9 -34.4 -34.4 -34.0 -33.6 -31.4 -30.2 -29.9 -28.6 -27.1 -24.7 -22.9 -22.2 -20.8 -19.6 -18.9 -17.7 -17.5 -16.1 -15.6 -14.8 -14.4 -13.4 -12.5 0.013 0.015 0.015 0.016 0.017 0.018 0.019 0.019 0.020 0.021 0.027 0.031 0.032 0.037 0.044 0.058 0.072 0.078 0.091 0.105 0.114 0.130 0.133 0.156 0.166 0.182 0.190 0.213 0.236 0.664 0.709 0.719 0.722 0.713 0.713 0.716 0.718 0.712 0.714 0.721 0.721 0.719 0.715 0.725 0.716 0.712 0.660 0.654 0.649 0.700 0.746 0.738 0.768 0.800 0.799 0.763 0.787 0.782 0.922 0.914 0.914 0.911 0.911 0.912 0.910 0.910 0.913 0.910 0.904 0.905 0.905 0.906 0.905 0.904 0.899 0.905 0.902 0.900 0.894 0.882 0.873 0.856 0.853 0.837 0.829 0.828 0.807 -131.5 -155.7 -165.2 -170.5 -173.3 -176.0 -178.3 179.9 178.4 176.8 170.5 166.1 165.2 161.1 154.9 145.1 134.9 126.0 115.8 106.4 95.9 84.9 74.3 64.6 56.0 47.4 40.6 32.7 26.1 31.1 25.7 22.3 19.8 18.3 16.7 15.4 14.2 13.2 12.2 8.7 6.7 6.1 4.5 2.6 0.4 -1.3 -3.6 -4.6 -5.6 -6.1 -7.0 -8.1 -8.1 -8.4 -8.8 -9.2 -9.5 -10.2 40 MSG/MAG & |S21|2 (dB) 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 57. MSG/MAG & |S21|2 vs. Frequency at 4.5V 200mA. 12 28.9 22.4 22.5 24.9 26.8 29.3 31.3 33.0 34.9 36.6 41.7 44.2 44.5 44.9 44.3 41.6 34.1 26.0 20.8 11.1 8.4 -0.9 -7.5 -13.1 -21.4 -29.6 -35.9 -43.3 -50.5 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. S21 MSG MAG 30 112.6 100.1 94.7 91.4 88.6 86.4 84.3 82.3 80.5 78.7 70.5 64.9 63.7 58.3 50.3 38.5 23.9 10.5 0.3 -11.1 -17.7 -26.8 -38.8 -45.4 -55.0 -64.1 -72.0 -80.5 -88.2 S22 Ang. MSG/MAG dB K factor -159.8 -170.7 -175.4 -178.4 -179.9 178.6 177.2 175.5 175.0 173.8 169.0 165.2 162.5 158.5 152.9 145.7 144.1 132.9 116.3 114.4 103.4 90.5 87.3 77.8 68.4 65.2 51.1 38.5 29.1 34.4 31.1 29.4 27.9 26.8 25.8 24.9 24.3 23.6 22.9 18.3 16.0 15.4 13.7 11.8 9.5 7.7 5.6 4.2 3.0 2.6 1.6 0.1 -0.1 -0.2 -1.0 -1.8 -2.0 -3.2 0.142 0.274 0.390 0.510 0.577 0.653 0.725 0.801 0.840 0.903 1.077 1.161 1.188 1.227 1.262 1.271 1.263 1.371 1.423 1.451 1.412 1.407 1.614 1.492 1.399 1.439 1.556 1.449 1.542 ATF-501P8 Typical Scattering Parameters, VDS = 4.5V, IDS = 360 mA Freq. S11 GHz Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 38.110 20.415 13.848 10.397 8.640 7.232 6.200 5.431 4.826 4.328 2.878 2.275 2.146 1.783 1.424 1.114 0.907 0.691 0.612 0.544 0.504 0.465 0.403 0.406 0.379 0.353 0.337 0.322 0.304 -39.2 -38.4 -37.7 -37.7 -36.5 -35.9 -35.9 -35.4 -34.9 -34.0 -32.0 -30.5 -30.2 -28.9 -27.3 -24.7 -22.7 -22.2 -20.7 -19.5 -18.8 -17.5 -17.3 -15.9 -15.2 -14.5 -14.2 -13.2 -12.4 0.011 0.012 0.013 0.013 0.015 0.016 0.016 0.017 0.018 0.020 0.025 0.030 0.031 0.036 0.043 0.058 0.073 0.078 0.092 0.106 0.115 0.133 0.137 0.161 0.174 0.189 0.196 0.218 0.240 0.649 0.692 0.701 0.704 0.693 0.694 0.696 0.697 0.695 0.694 0.698 0.702 0.701 0.699 0.708 0.701 0.699 0.654 0.647 0.642 0.697 0.743 0.735 0.768 0.801 0.800 0.763 0.787 0.783 0.911 0.910 0.911 0.913 0.907 0.910 0.910 0.906 0.913 0.907 0.904 0.906 0.904 0.907 0.906 0.903 0.896 0.903 0.903 0.891 0.885 0.873 0.866 0.849 0.849 0.841 0.828 0.817 0.809 -132.8 -156.5 -165.8 -171.1 -173.7 -176.3 -178.6 179.7 178.0 176.4 170.3 165.9 164.8 160.9 154.7 144.8 134.7 125.6 115.0 105.6 94.9 84.3 74.0 64.3 55.7 46.6 39.0 31.0 23.9 31.6 26.2 22.8 20.3 18.7 17.2 15.8 14.7 13.7 12.7 9.2 7.1 6.6 5.0 3.1 0.9 -0.8 -3.2 -4.3 -5.3 -6.0 -6.7 -7.9 -7.8 -8.4 -9.0 -9.4 -9.8 -10.3 40 MSG/MAG & |S21|2 (dB) 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 58. MSG/MAG & |S21|2 vs. Frequency at 4.5V 360mA. 13 30.3 24.9 26.2 28.9 31.8 34.5 36.8 38.8 40.6 42.3 47.0 48.7 49.0 49.0 47.7 44.2 36.2 27.9 22.4 12.8 10.2 0.9 -5.8 -12.1 -21.3 -30.3 -37.1 -45.1 -52.4 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. S21 MSG MAG 30 112.4 100.0 94.6 91.3 88.5 86.2 84.2 82.2 80.3 78.4 70.4 64.5 63.2 57.9 49.4 37.7 22.7 8.9 -1.0 -13.3 -20.0 -28.4 -41.1 -47.3 -57.9 -69.0 -73.1 -83.0 -92.7 S22 Ang. MSG/MAG dB K factor -162.1 -171.8 -176.2 -178.9 179.7 178.2 176.9 175.6 174.8 173.7 169.4 165.5 162.8 159.0 153.6 146.7 145.1 134.0 117.3 115.4 104.4 91.3 87.9 78.3 68.8 65.5 51.4 38.7 29.3 35.4 32.3 30.3 29.0 27.6 26.6 25.9 25.0 24.3 23.4 18.2 16.1 15.5 14.0 12.0 9.7 7.9 5.9 4.6 2.9 2.4 1.6 0.1 0.0 -0.2 -0.9 -2.0 -2.4 -3.2 0.200 0.340 0.472 0.600 0.679 0.747 0.838 0.914 0.930 0.984 1.154 1.193 1.231 1.246 1.275 1.268 1.256 1.355 1.375 1.495 1.462 1.416 1.607 1.464 1.361 1.376 1.547 1.491 1.513 ATF-501P8 Typical Scattering Parameters, VDS = 3.5V, IDS = 280 mA Freq. S11 GHz Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 34.047 18.161 12.313 9.220 7.674 6.429 5.511 4.813 4.302 3.850 2.555 2.025 1.912 1.588 1.276 1.012 0.827 0.636 0.570 0.522 0.499 0.477 0.411 0.421 0.397 0.390 0.345 0.354 0.329 -38.4 -37.7 -37.1 -37.1 -35.9 -35.4 -34.9 -34.9 -34.4 -33.6 -31.4 -30.2 -29.9 -28.6 -26.9 -24.4 -22.5 -22.0 -20.6 -19.4 -18.8 -17.7 -17.6 -16.3 -15.8 -15.0 -14.6 -13.5 -12.6 0.012 0.013 0.014 0.014 0.016 0.017 0.018 0.018 0.019 0.021 0.027 0.031 0.032 0.037 0.045 0.060 0.075 0.079 0.093 0.107 0.115 0.131 0.132 0.153 0.163 0.178 0.186 0.211 0.234 0.716 0.759 0.767 0.770 0.760 0.761 0.762 0.760 0.764 0.759 0.759 0.763 0.762 0.758 0.762 0.754 0.742 0.674 0.669 0.666 0.709 0.754 0.745 0.770 0.801 0.795 0.755 0.787 0.777 0.923 0.922 0.920 0.920 0.915 0.917 0.917 0.915 0.918 0.913 0.913 0.913 0.910 0.913 0.906 0.910 0.903 0.907 0.903 0.897 0.889 0.880 0.870 0.847 0.839 0.816 0.808 0.794 0.769 -133.9 -157.1 -166.1 -171.3 -173.9 -176.5 -178.9 179.6 177.7 176.4 170.4 166.1 164.8 160.9 154.6 144.7 134.6 125.4 115.2 105.5 94.8 84.2 73.4 63.8 55.1 47.3 39.8 32.3 26.0 30.6 25.2 21.8 19.3 17.7 16.2 14.8 13.6 12.7 11.7 8.1 6.1 5.6 4.0 2.1 0.1 -1.6 -3.9 -4.9 -5.6 -6.0 -6.4 -7.7 -7.5 -8.0 -8.2 -9.2 -9.0 -9.7 S21 MSG MAG MSG/MAG & |S21|2 (dB) 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 59. MSG/MAG & |S21|2 vs. Frequency at 3.5V 280mA. 14 28.8 23.8 25.0 27.5 30.0 32.9 34.8 37.2 38.8 40.5 45.6 47.1 47.6 47.5 45.9 42.4 34.3 25.3 19.8 9.9 7.0 -2.4 -9.1 -14.5 -22.5 -30.0 -35.9 -43.3 -50.7 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 40 30 111.6 99.7 94.5 91.4 88.7 86.6 84.6 82.8 81.0 79.1 72.0 66.3 65.1 60.4 52.2 41.6 27.2 14.0 5.1 -7.0 -14.5 -23.6 -33.8 -41.1 -52.2 -63.9 -70.3 -81.5 -91.7 S22 Ang. MSG/MAG dB K factor -164.7 -173.4 -177.3 -179.8 178.8 177.2 175.8 175.0 173.7 172.4 168.1 163.9 161.0 156.7 150.9 143.3 141.3 130.1 113.5 112.0 100.9 88.2 85.0 75.9 66.5 63.4 49.5 36.6 27.7 34.5 31.5 29.4 28.2 26.8 25.8 24.9 24.3 23.5 22.6 18.1 15.9 15.2 13.6 11.5 9.4 7.5 5.3 3.9 2.8 2.4 1.9 0.3 0.1 -0.1 -0.8 -2.3 -2.1 -3.2 0.166 0.301 0.427 0.549 0.622 0.697 0.761 0.843 0.877 0.930 1.070 1.139 1.181 1.206 1.261 1.226 1.239 1.402 1.448 1.484 1.458 1.378 1.614 1.519 1.458 1.495 1.727 1.538 1.632 ATF-501P8 Typical Scattering Parameters, VDS = 3.5V, IDS = 200 mA Freq. S11 GHz Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 33.400 17.862 12.118 9.080 7.556 6.328 5.422 4.739 4.232 3.788 2.515 1.991 1.882 1.562 1.255 0.988 0.813 0.624 0.555 0.509 0.477 0.450 0.393 0.408 0.391 0.377 0.354 0.350 0.332 0.346 -37.1 -36.5 -36.5 -35.9 -35.4 -34.9 -34.4 -34.0 -33.6 -33.2 -31.4 -29.9 -29.6 -28.6 -26.9 -24.4 -22.6 -22.0 -20.6 -19.4 -18.8 -17.7 -17.6 -16.4 -15.8 -15.1 -14.7 -13.6 -12.6 -11.5 0.014 0.015 0.015 0.016 0.017 0.018 0.019 0.020 0.021 0.022 0.027 0.032 0.033 0.037 0.045 0.060 0.074 0.079 0.093 0.107 0.115 0.130 0.132 0.152 0.162 0.176 0.185 0.210 0.234 0.266 0.703 0.749 0.757 0.760 0.751 0.752 0.753 0.752 0.755 0.750 0.750 0.755 0.753 0.750 0.754 0.746 0.735 0.669 0.664 0.662 0.705 0.751 0.742 0.767 0.798 0.793 0.754 0.785 0.776 0.797 0.924 0.919 0.918 0.918 0.918 0.915 0.915 0.914 0.919 0.916 0.912 0.911 0.910 0.911 0.909 0.911 0.902 0.904 0.904 0.901 0.897 0.880 0.872 0.849 0.841 0.820 0.809 0.794 0.770 0.766 -132.7 -156.5 -165.7 -171.0 -173.6 -176.2 -178.5 179.8 178.0 176.7 170.5 166.0 164.9 160.9 154.7 144.8 134.8 125.5 115.6 105.6 95.4 84.1 73.7 64.2 55.5 47.1 39.3 32.7 25.8 21.5 30.5 25.0 21.7 19.2 17.6 16.0 14.7 13.5 12.5 11.6 8.0 6.0 5.5 3.9 2.0 -0.1 -1.8 -4.1 -5.1 -5.9 -6.4 -6.9 -8.1 -7.8 -8.2 -8.5 -9.0 -9.1 -9.6 -9.2 40 MSG/MAG & |S21|2 (dB) 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 60. MSG/MAG & |S21|2 vs. Frequency at 3.5V 200mA. 15 28.4 22.1 22.7 24.6 26.4 29.3 31.3 33.2 35.1 36.7 42.0 44.3 44.7 45.0 43.9 41.0 33.3 24.6 19.3 9.5 6.6 -3.0 -9.7 -14.9 -22.8 -29.9 -35.9 -43.1 -50.5 -60.7 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. S21 MSG MAG 30 112.1 99.9 94.6 91.4 88.7 86.5 84.5 82.7 80.8 79.0 71.5 65.8 64.7 59.7 51.5 40.4 25.9 12.7 3.9 -8.3 -14.5 -23.9 -34.0 -42.5 -53.2 -63.5 -69.5 -84.1 -89.0 -99.8 S22 Ang. MSG/MAG dB K factor -162.3 -172.1 -176.5 -179.2 179.4 177.7 176.3 175.3 174.1 172.8 168.3 165.0 164.2 161.3 157.0 151.3 143.7 141.8 130.6 113.9 112.3 101.2 88.5 85.3 76.2 66.8 63.6 49.8 36.9 28.0 33.8 30.8 29.1 27.5 26.5 25.5 24.6 23.7 23.0 22.4 18.2 15.8 15.2 13.5 11.5 9.3 7.4 5.0 3.8 2.7 2.3 1.5 0.0 0.0 -0.2 -1.0 -2.1 -2.1 -3.1 -2.6 0.150 0.269 0.390 0.496 0.559 0.651 0.717 0.777 0.806 0.870 1.057 1.126 1.157 1.215 1.244 1.225 1.255 1.438 1.455 1.466 1.437 1.429 1.646 1.539 1.465 1.527 1.708 1.543 1.634 1.394 ATF-501P8 Typical Scattering Parameters, VDS = 3.5V, IDS = 360 mA Freq. S11 GHz Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 34.576 18.445 12.499 9.372 7.792 6.537 5.596 4.888 4.370 3.911 2.596 2.059 1.940 1.618 1.296 1.023 0.844 0.647 0.582 0.532 0.513 0.474 0.417 0.424 0.407 0.389 0.357 0.353 0.344 -39.2 -38.4 -37.7 -37.7 -36.5 -35.9 -35.4 -34.9 -34.4 -34.0 -31.7 -30.2 -29.9 -28.6 -26.9 -24.4 -22.5 -21.9 -20.6 -19.4 -18.8 -17.7 -17.5 -16.2 -15.7 -14.9 -14.6 -13.5 -12.5 0.011 0.012 0.013 0.013 0.015 0.016 0.017 0.018 0.019 0.020 0.026 0.031 0.032 0.037 0.045 0.060 0.075 0.080 0.093 0.107 0.115 0.131 0.133 0.154 0.165 0.180 0.187 0.211 0.236 0.722 0.763 0.771 0.773 0.763 0.765 0.765 0.764 0.768 0.762 0.761 0.766 0.765 0.761 0.765 0.756 0.745 0.676 0.670 0.666 0.710 0.756 0.746 0.772 0.802 0.793 0.759 0.786 0.777 0.919 0.920 0.921 0.918 0.915 0.916 0.916 0.914 0.919 0.914 0.912 0.914 0.910 0.912 0.913 0.908 0.903 0.906 0.904 0.902 0.893 0.881 0.873 0.847 0.844 0.827 0.818 0.799 0.780 -134.2 -157.3 -166.4 -171.4 -174.0 -176.7 -178.9 179.4 178.1 176.2 170.2 165.8 164.7 160.8 154.4 144.7 134.5 125.5 115.1 105.3 95.0 84.1 73.6 63.9 55.4 47.4 40.2 32.9 26.7 30.8 25.3 21.9 19.4 17.8 16.3 15.0 13.8 12.8 11.8 8.3 6.3 5.8 4.2 2.3 0.2 -1.5 -3.8 -4.7 -5.5 -5.8 -6.5 -7.6 -7.5 -7.8 -8.2 -8.9 -9.0 -9.3 40 MSG/MAG & |S21|2 (dB) 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 61. MSG/MAG & |S21|2 vs. Frequency at 3.5V 360mA. 16 29.6 25.5 26.7 30.0 32.7 35.7 37.9 40.0 41.8 43.0 47.8 49.2 49.3 49.0 47.3 43.2 34.8 25.7 20.3 10.3 7.5 -1.9 -8.5 -13.9 -22.0 -29.7 -35.8 -43.1 -50.4 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. S21 MSG MAG 30 111.7 99.7 94.6 91.5 88.8 86.6 84.7 83.1 81.1 79.3 72.2 66.7 65.6 60.7 52.9 42.0 27.9 15.0 5.9 -6.4 -13.3 -22.0 -32.9 -40.6 -52.7 -63.7 -67.9 -81.4 -90.7 S22 Ang. MSG/MAG dB K factor -166.1 -174.1 -177.8 179.8 178.6 176.9 175.6 174.9 173.4 172.2 168.1 163.8 160.9 156.6 150.8 143.0 141.1 129.9 113.3 111.6 100.7 88.2 84.9 75.7 66.3 63.2 49.4 36.5 27.6 35.0 31.9 29.8 28.6 27.2 26.1 25.2 24.3 23.6 22.9 18.0 15.9 15.2 13.6 11.8 9.4 7.6 5.3 4.1 3.1 2.7 1.9 0.5 0.2 0.1 -0.7 -1.9 -2.0 -2.7 0.191 0.336 0.460 0.599 0.665 0.744 0.809 0.871 0.892 0.963 1.103 1.142 1.185 1.210 1.221 1.236 1.233 1.392 1.430 1.433 1.416 1.388 1.577 1.507 1.407 1.457 1.637 1.526 1.549 ATF-501P8 Typical Scattering Parameters, VDS = 5.5V, IDS = 280 mA Freq. S11 GHz Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 39.087 20.961 14.228 10.678 8.871 7.417 6.365 5.577 4.956 4.446 2.951 2.331 2.197 1.822 1.455 1.129 0.916 0.695 0.616 0.546 0.499 0.458 0.386 0.385 0.366 0.330 0.317 0.310 0.291 -38.4 -37.7 -37.1 -37.1 -36.5 -35.9 -35.4 -34.9 -34.4 -34.0 -32.0 -30.5 -30.2 -29.1 -27.3 -24.9 -23.0 -22.3 -20.8 -19.6 -18.9 -17.6 -17.3 -15.8 -15.2 -14.4 -14.1 -13.2 -12.4 0.012 0.013 0.014 0.014 0.015 0.016 0.017 0.018 0.019 0.020 0.025 0.030 0.031 0.035 0.043 0.057 0.071 0.077 0.091 0.105 0.114 0.132 0.137 0.162 0.174 0.191 0.198 0.219 0.240 0.618 0.661 0.670 0.674 0.662 0.663 0.666 0.667 0.664 0.664 0.672 0.674 0.674 0.672 0.685 0.679 0.681 0.648 0.641 0.636 0.694 0.741 0.731 0.768 0.804 0.807 0.768 0.792 0.788 0.914 0.912 0.914 0.913 0.909 0.910 0.911 0.908 0.913 0.907 0.903 0.905 0.903 0.903 0.900 0.902 0.895 0.903 0.898 0.898 0.884 0.871 0.864 0.849 0.854 0.841 0.834 0.824 0.813 -131.5 -155.7 -165.2 -170.5 -173.3 -176.0 -178.2 -179.8 178.4 176.7 170.5 166.2 165.2 161.0 154.7 145.0 134.9 125.8 115.4 105.8 95.4 84.6 74.2 64.8 56.1 47.7 40.0 31.9 24.7 31.8 26.4 23.1 20.6 19.0 17.4 16.1 14.9 13.9 13.0 9.4 7.4 6.8 5.2 3.3 1.1 -0.8 -3.2 -4.2 -5.3 -6.0 -6.8 -8.3 -8.3 -8.7 -9.6 -10.0 -10.2 -10.7 S21 MSG MAG MSG/MAG & |S21|2 (dB) 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 62. MSG/MAG & |S21|2 vs. Frequency at 5.5V 280mA. 17 29.6 23.9 24.1 26.7 29.0 31.7 34.3 36.0 38.0 39.4 44.5 46.4 47.0 47.3 46.7 43.8 36.2 28.3 22.9 13.3 10.9 1.6 -5.2 -11.5 -20.9 -29.9 -37.0 -45.0 -52.2 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 40 30 112.6 100.1 94.5 91.1 88.3 86.0 83.9 81.8 79.9 78.0 69.6 63.5 62.1 56.7 47.9 35.9 20.6 6.8 -3.5 -16.3 -23.2 -31.5 -43.6 -49.9 -60.4 -68.9 -73.5 -83.2 -88.9 S22 Ang. MSG/MAG dB K factor -158.7 -170.0 -174.9 -177.9 -179.3 179.2 177.8 176.3 175.7 174.5 170.1 166.5 164.0 160.3 155.2 148.6 147.0 135.8 119.2 117.2 106.2 92.7 89.5 79.6 70.2 66.7 52.4 39.7 30.0 35.1 32.1 30.1 28.8 27.7 26.7 25.7 24.9 24.2 23.5 18.4 16.3 15.7 14.0 12.0 9.8 8.0 6.1 4.5 3.3 2.4 1.6 -0.2 -0.3 -0.2 -1.3 -2.3 -2.5 -3.5 0.172 0.307 0.420 0.550 0.638 0.715 0.782 0.850 0.878 0.958 1.141 1.182 1.222 1.284 1.307 1.278 1.271 1.340 1.401 1.416 1.459 1.420 1.655 1.479 1.332 1.385 1.536 1.466 1.533 ATF-501P8 Typical Scattering Parameters, VDS = 5.5V, IDS = 200 mA Freq. S11 GHz Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 38.725 20.822 14.136 10.611 8.824 7.375 6.329 5.549 4.922 4.418 2.933 2.322 2.182 1.815 1.447 1.123 0.909 0.693 0.608 0.536 0.497 0.446 0.386 0.387 0.364 0.335 0.309 0.309 0.298 -37.7 -37.1 -36.5 -36.5 -35.4 -35.4 -34.9 -34.4 -34.0 -33.6 -31.7 -30.5 -30.2 -28.9 -27.3 -24.9 -23.0 -22.4 -20.9 -19.7 -18.9 -17.7 -17.4 -15.9 -15.3 -14.5 -14.2 -13.3 -12.5 0.013 0.014 0.015 0.015 0.017 0.017 0.018 0.019 0.020 0.021 0.026 0.030 0.031 0.036 0.043 0.057 0.071 0.076 0.090 0.104 0.113 0.131 0.135 0.160 0.172 0.188 0.195 0.216 0.238 0.615 0.659 0.669 0.673 0.662 0.662 0.665 0.667 0.662 0.664 0.673 0.674 0.673 0.671 0.684 0.678 0.681 0.647 0.640 0.634 0.692 0.739 0.730 0.767 0.803 0.805 0.768 0.792 0.790 0.921 0.914 0.914 0.913 0.909 0.909 0.909 0.908 0.911 0.909 0.905 0.907 0.903 0.906 0.903 0.904 0.899 0.904 0.901 0.896 0.891 0.877 0.871 0.851 0.850 0.839 0.834 0.827 0.814 -130.1 -155.0 -164.6 -170.1 -172.9 -175.7 -178.1 -179.7 178.5 176.8 170.8 166.3 165.3 161.2 155.0 145.1 135.2 126.2 115.6 106.2 95.4 85.0 74.4 64.9 56.2 48.0 39.7 32.2 24.4 31.8 26.4 23.0 20.5 18.9 17.4 16.0 14.9 13.8 12.9 9.3 7.3 6.8 5.2 3.2 1.0 -0.8 -3.2 -4.3 -5.4 -6.1 -7.0 -8.3 -8.2 -8.8 -9.5 -10.2 -10.2 -10.5 S21 MSG MAG MSG/MAG & |S21|2 (dB) 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 63. MSG/MAG & |S21|2 vs. Frequency at 5.5V 200mA. 18 29.6 22.8 22.7 24.9 26.8 29.4 31.3 32.9 35.3 36.4 41.7 44.3 44.5 45.1 44.7 42.3 35.1 27.4 22.2 12.6 10.2 1.0 -5.8 -11.8 -21.0 -29.9 -36.8 -44.6 -51.8 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 40 30 113.1 100.3 94.7 91.3 88.4 86.0 83.9 81.8 80.0 78.0 69.4 63.4 62.1 56.5 47.8 35.9 20.3 6.5 -4.0 -15.9 -23.9 -32.3 -42.5 -49.0 -60.0 -67.9 -72.5 -82.4 -89.4 S22 Ang. MSG/MAG dB K factor -156.5 -168.9 -174.1 -177.3 -178.9 179.6 178.2 176.5 176.0 174.8 170.3 166.6 164.1 160.4 155.3 148.7 147.2 136.0 119.4 117.5 106.3 92.9 89.7 79.8 70.5 66.9 52.7 39.9 30.2 34.7 31.7 29.7 28.5 27.2 26.4 25.5 24.7 23.9 23.2 18.8 16.5 15.7 14.2 12.1 9.9 8.2 6.2 4.6 3.1 2.6 1.5 -0.1 -0.3 -0.3 -1.3 -2.5 -2.5 -3.2 0.145 0.274 0.385 0.510 0.576 0.672 0.739 0.798 0.843 0.897 1.079 1.153 1.208 1.226 1.273 1.257 1.235 1.332 1.386 1.459 1.408 1.403 1.625 1.480 1.364 1.403 1.585 1.472 1.510 ATF-501P8 Typical Scattering Parameters, VDS = 5.5V, IDS = 360 mA Freq. S11 GHz Mag. Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 2 2.5 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 38.785 20.860 14.161 10.635 8.834 7.399 6.337 5.557 4.942 4.429 2.941 2.325 2.191 1.817 1.456 1.130 0.913 0.695 0.609 0.544 0.499 0.455 0.389 0.387 0.360 0.330 0.315 0.309 0.299 -39.2 -38.4 -37.7 -37.1 -36.5 -35.9 -35.4 -35.4 -34.9 -34.4 -32.0 -30.8 -30.2 -29.1 -27.5 -24.9 -23.0 -22.3 -20.8 -19.6 -18.9 -17.5 -17.2 -15.7 -15.1 -14.3 -14.0 -13.2 -12.3 0.011 0.012 0.013 0.014 0.015 0.016 0.017 0.017 0.018 0.019 0.025 0.029 0.031 0.035 0.042 0.057 0.071 0.077 0.091 0.105 0.114 0.133 0.138 0.164 0.176 0.192 0.199 0.220 0.242 0.619 0.662 0.672 0.675 0.663 0.664 0.666 0.668 0.665 0.665 0.672 0.676 0.675 0.674 0.686 0.680 0.683 0.649 0.643 0.636 0.696 0.743 0.732 0.769 0.805 0.806 0.769 0.792 0.789 0.904 0.910 0.912 0.912 0.907 0.909 0.909 0.907 0.909 0.906 0.904 0.904 0.900 0.905 0.900 0.904 0.897 0.902 0.899 0.893 0.886 0.867 0.871 0.854 0.855 0.845 0.842 0.833 0.826 -132.0 -156.2 -165.4 -170.7 -173.5 -176.1 -178.3 179.9 178.4 176.7 170.5 166.1 165.1 161.0 155.0 144.9 134.8 125.7 115.5 105.9 95.4 85.0 75.0 65.6 56.8 48.1 40.7 32.6 25.5 31.8 26.4 23.0 20.5 18.9 17.4 16.0 14.9 13.9 12.9 9.4 7.3 6.8 5.2 3.3 1.1 -0.8 -3.2 -4.3 -5.3 -6.0 -6.8 -8.2 -8.2 -8.9 -9.6 -10.0 -10.2 -10.5 S21 MSG MAG MSG/MAG & |S21|2 (dB) 20 10 0 -10 -20 0 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) Figure 64. MSG/MAG & |S21|2 vs. Frequency at 5.5V 360mA. 19 29.8 24.8 25.5 27.8 30.5 33.4 35.7 37.6 39.7 41.2 46.2 47.9 48.4 48.6 47.4 44.4 36.8 28.9 23.4 13.8 11.7 2.3 -4.6 -11.0 -20.4 -29.6 -36.7 -44.6 -51.8 Notes: 1. S parameter is measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 40 30 113.0 100.3 94.7 91.2 88.4 86.1 83.9 81.9 80.0 78.0 69.7 63.6 62.2 56.6 48.2 35.7 20.7 7.3 -3.7 -16.0 -23.1 -31.7 -43.4 -49.9 -61.2 -68.7 -72.5 -82.1 -87.9 S22 Ang. MSG/MAG dB K factor -159.9 -170.6 -175.3 -178.2 -179.5 178.9 177.6 176.2 175.5 174.3 170.1 166.5 163.9 160.2 155.1 148.5 146.9 135.8 119.1 117.1 106.1 92.6 89.3 79.4 70.0 66.4 52.1 39.4 29.7 35.5 32.4 30.4 28.8 27.7 26.7 25.7 25.1 24.4 23.7 18.4 16.2 15.5 14.0 12.0 9.9 8.0 6.0 4.5 3.1 2.4 1.4 0.0 -0.2 -0.3 -1.3 -2.2 -2.4 -3.1 0.198 0.338 0.459 0.571 0.666 0.741 0.808 0.901 0.943 1.008 1.150 1.225 1.254 1.278 1.329 1.267 1.264 1.359 1.402 1.470 1.447 1.439 1.589 1.436 1.323 1.371 1.502 1.436 1.457 Device Models Refer to Avago's Web Site www.Avagotech.com/view/rf Ordering Information Part Number No. of Devices Container ATF-501P8-TR1 3000 7" Reel ATF-501P8-TR2 10000 13"Reel ATF-501P8-BLK 100 antistatic bag 2 x 2 LPCC (JEDEC DFP-N) Package Dimensions D1 pin1 P D pin1 1 8 2 7 e E1 3 R 0PX 4 5 b L Top View Bottom View A1 A A A2 End View End View DIMENSIONS SYMBOL A A1 A2 b D D1 E E1 e P L MIN. 0.70 0 0.203 REF 0.225 1.9 0.65 1.9 1.45 0.50 BSC 0.2 NOM. 0.75 0.02 0.203 REF 0.25 2.0 0.80 2.0 1.6 0.50 BSC 0.25 0.4 REF DIMENSIONS ARE IN MILLIMETERS 20 E 6 MAX. 0.80 0.05 0.203 REF 0.275 2.1 0.95 2.1 1.75 0.50 BSC 0.3 PCB Land Pattern and Stencil Design 2.72 (107.09) 2.80 (110.24) 0.70 (27.56) 0.63 (24.80) 0.25 (9.84) 0.22 (8.86) 0.25 (9.84) PIN 1 0.32 (12.79) PIN 1 0.50 (19.68) 0.50 (19.68) f0.20 (7.87) 1.54 (60.61) 1.60 (62.99) Solder mask RF transmission line + 0.25 (9.74) 0.28 (10.83) 0.60 (23.62) 0.63 (24.80) 0.72 (28.35) 0.80 (31.50) 0.15 (5.91) 0.55 (21.65) Stencil Layout (top view) PCB Land Pattern (top view) Notes: Typical stencil thickness is 5 mils. Measurements are in millimeters (mils). Device Orientation 4 mm REEL 8 mm CARRIER TAPE USER FEED DIRECTION COVER TAPE 21 0PX 0PX 0PX 0PX Tape Dimensions P0 P D P2 E F W + + D1 Tt t1 K0 10 Max 10 Max A0 DESCRIPTION CAVITY LENGTH COVER TAPE DISTANCE SIZE (mm) SIZE (inches) 2.30 0.05 0.091 0.004 2.30 0.05 0.091 0.004 1.00 0.05 0.039 0.002 PITCH BOTTOM HOLE DIAMETER K0 P D1 4.00 0.10 1.00 + 0.25 0.157 0.004 0.039 + 0.002 DIAMETER D 1.50 0.10 0.060 0.004 PITCH P0 4.00 0.10 0.157 0.004 POSITION E 1.75 0.10 0.069 0.004 WIDTH W THICKNESS t1 8.00 + 0.30 8.00 - 0.10 0.254 0.02 0.315 0.012 0.315 0.004 0.010 0.0008 WIDTH C 5.4 0.10 0.205 0.004 TAPE THICKNESS Tt 0.062 0.001 0.0025 0.0004 CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 0.05 0.138 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 0.05 0.079 0.002 DEPTH CARRIER TAPE SYMBOL A0 B0 WIDTH PERFORATION B0 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright (c) 2005-2009 Avago Technologies. All rights reserved. Obsoletes 5988-9767EN AV02-1846EN - March 27, 2009