This product complies with the RoHS Directive (EU 2002/95/EC). DSC5G02 Silicon NPN epitaxial planar type For high-frequency amplification DSC2G02 in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity High transition frequency fT Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Code SMini3-F2-B Pin Name 1. Base 2. Emitter 3. Collector Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Marking Symbol: C5 Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 3 V Collector current IC 15 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 mA, IE = 0 30 V Emitter-base voltage (Collector open) VEBO IE = 10 mA, IC = 0 3 V Base-emitter voltage VBE VCE = 6 V, IC = 1 mA Forward current transfer ratio * hFE VCE = 6 V, IC = 1 mA 65 Transition frequency fT VCE = 6 V, IC = 1 mA 450 Reverse transfer capacitance (Common emitter) Cre Power gain Noise figure 0.72 V 260 650 MHz VCE = 6 V, IC = 1 mA , f = 10.7 MHz 0.6 pF PG VCE = 6 V, IC = 1 mA , f = 100 MHz 24 dB NF VCE = 6 V, IC = 1 mA , f = 100 MHz 3.3 dB Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Code C D 0 Rank C D No-rank hFE 65 to 160 100 to 260 65 to 260 Marking Symbol C5C C5D C5 Product of no-rank is not classified and have no marking symbol for rank. Publication date: January 2011 Ver. BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). DSC5G02 DSC5G02_PC-Ta DSC5G02_IC-VCE PC Ta IC VCE 150 100 50 0 40 80 120 160 16 IB = 120 A 8 4 0 200 110 A 100 A 90 A 80 A 70 A 60 A 50 A 40 A 30 A 12 Ambient temperature Ta (C) 0 2 4 Collector current IC (mA) Collector-emitter saturation voltage VCE(sat) (V) 1 Ta = 85C -30C 1 10 102 25C Ta = 85C 10 -30C 5 0 0 0.2 0.4 fT IC Transition frequency fT (MHz) VCE = 6 V Ta = 25C 1 200 800 400 1 10 102 Collector current IC (mA) 2 -30C 80 40 0.6 0.8 Ver. BED 1 10 102 Collector current IC (mA) Cob VCB 15 DSC5G02_fT-IC 0 10-1 25C DSC5G02_Cob-VCB 1.0 Base-emitter voltage VBE (V) Collector current IC (mA) 1 600 120 0 10-1 12 20 VCE = 6 V 10-2 10-1 Ta = 85C IC VBE IC / IB = 10 25C 10 160 DSC5G02_IC-VBE VCE(sat) IC 10-1 8 VCE = 6 V Collector-emitter voltage VCE (V) DSC5G02_VCEsat-IC 10 6 1.2 Collector output capacitance (Common base, input open circuited) Cob (pF) 0 Forward current transfer ratio hFE Ta = 25C 200 hFE IC 200 20 Collector current IC (mA) Collector power dissipation PC (mW) 250 DSC5G02_hFE-IC 2.0 IE = 0 f = 1 MHz Ta = 25C 1.6 1.2 0.8 0.4 0 1 10 100 Collector-base voltage VCB (V) This product complies with the RoHS Directive (EU 2002/95/EC). DSC5G02 SMini3-F2-B Unit: mm 2.00 0.20 +0.05 0.30 -0.02 1 0.425 0.05 (5) 2.10 0.10 1.25 0.10 3 2 (0.65) (0.65) +0.05 0.13 -0.02 (0.49) 1.30 0.10 0 to 0.10 0.90 0.10 (5) Ver. BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. 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Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202