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May 2014
FDA24N50F — N-Channel UniFETTM FRFET® MOSFET
©2012 Fairchild Semiconductor Corporation
FDA24N50F Rev. C2
www.fairchildsemi.com
1
FDA24N50F
N-Channel UniFETTM FRFET® MOSFET
500 V, 24 A, 200 mΩ
Features
•R
DS(on) = 166 mΩ (Typ.) @ VGS = 10 V, ID = 12 A
• Low Gate Charge (Typ. 65 nC)
• Low Crss (Typ. 32 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
•PDP TV
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery perfor-
mance of UniFET FRFET® MOSFET has been enhanced by
lifetime control. Its trr is less than 100nsec and the reverse dv/dt
immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
TO-3PN
GDS
G
S
D
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Thermal Characteristics
Symbol Parameter FDA24N50F Unit
VDSS Drain to Source Voltage 500 V
VGSS Gate to Source Voltage ±30 V
IDDrain Current - Continuous (TC = 25oC) 24 A
- Continuous (TC = 100oC) 14
IDM Drain Current - Pulsed (Note 1) 96 A
EAS Single Pulsed Avalanche Energy (Note 2) 1872 mJ
IAR Avalanche Current (Note 1) 24 A
EAR Repetitive Avalanche Energy (Note 1) 27 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
PDPower Dissipation (TC = 25oC) 270 W
- Derate Above 25oC2.2W/
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC
TLMaximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC
Symbol Parameter FDA24N50F Unit
RθJC Thermal Resistance, Junction to Case, Max. 0.46 oC/W
RθJA Thermal Resistance, Junction to Ambient, Max. 40
FDA24N50F — N-Channel UniFETTM FRFET® MOSFET
©2012 Fairchild Semiconductor Corporation
FDA24N50F Rev. C2
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDA24N50F FDA24N50F TO-3PN Tube N/A N/A 30 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V, TJ = 25oC 500 - - V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, Referenced to 25oC-0.6-V/
oC
IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V - - 1 μA
VDS = 400 V, TC = 125oC--10
IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V - - ±100 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA3.0-5.0V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 12 A - 0.166 0.2 Ω
gFS Forward Transconductance VDS = 20 V, ID = 12 A - 30 - S
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1 MHz
- 3240 4310 pF
Coss Output Capacitance - 450 600 pF
Crss Reverse Transfer Capacitance - 32 48 pF
Qg(tot) Total Gate Charge at 10V VDS = 400 V, ID = 24 A,
VGS = 10 V
(Note 4,)
-6585nC
Qgs Gate to Source Gate Charge - 18 - nC
Qgd Gate to Drain “Miller” Charge - 26 - nC
td(on) Turn-On Delay Time
VDD = 250 V, ID = 24 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
- 49 108 ns
trTurn-On Rise Time - 105 220 ns
td(off) Turn-Off Delay Time - 165 340 ns
tfTurn-Off Fall Time - 87 185 ns
ISMaximum Continuous Drain to Source Diode Forward Current - - 24 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 96 A
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 24 A - - 1.4 V
trr Reverse Recovery Time VGS = 0 V, ISD = 24 A,
dIF/dt = 100 A/μs
- 264 - ns
Qrr Reverse Recovery Charge - 1.4 - μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 6.5 mH, IAS = 24 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 24 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
FDA24N50F — N-Channel UniFETTM FRFET® MOSFET
©2012 Fairchild Semiconductor Corporation
FDA24N50F Rev. C2
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.1 1 10
1
10
60
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
ID,Drain Current[A]
VDS,Drain-Source Voltage[V]
0.5
45678
1
10
100
-55oC
150oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
25oC
ID,Drain Current[A]
VGS,Gate-Source Voltage[V]
0 20406080
0.15
0.20
0.25
0.30
0.35
*Note: TJ = 25oC
VGS = 20V
VGS = 10V
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.2 0.6 1.0 1.4
1
10
100
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
150oC
IS, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
150
0.1 1 10
0
1500
3000
4500
6000
7500
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
30
0204060
0
2
4
6
8
10
*Note: ID = 24A
VDS = 100V
VDS = 250V
VDS = 400V
VGS, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
70
FDA24N50F — N-Channel UniFETTM FRFET® MOSFET
©2012 Fairchild Semiconductor Corporation
FDA24N50F Rev. C2
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-75 -25 25 75 125 175
0.8
0.9
1.0
1.1
1.2
*Notes:
1. VGS = 0V
2. ID = 250μA
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-75 -25 25 75 125 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. VGS = 10V
2. ID = 12A
RDS(on), [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
25 50 75 100 125 150
0
6
12
18
24
ID, Drain Current [A]
TC, Case Temperature [oC]
10-5 10-4 10-3 10-2 10-1 100101
0.001
0.01
0.1
1
0.01
0.1
0.2
0.05
0.02 *Notes:
1. ZθJC(t) = 0.46oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.5
Single pulse
Thermal Response [ZθJC]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
ZθJC(t), Thermal Response [oC/W]
t
1
, Rectangular Pulse Duration [sec]
FDA24N50F — N-Channel UniFETTM FRFET® MOSFET
©2012 Fairchild Semiconductor Corporation
FDA24N50F Rev. C2
www.fairchildsemi.com
5
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VGS
IG = const.
FDA24N50F — N-Channel UniFETTM FRFET® MOSFET
©2012 Fairchild Semiconductor Corporation
FDA24N50F Rev. C2
www.fairchildsemi.com
6
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
FDA24N50F — N-Channel UniFETTM FRFET® MOSFET
©2012 Fairchild Semiconductor Corporation
FDA24N50F Rev. C2
www.fairchildsemi.com
7
Mechanical Dimensions
Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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FDA24N50F — N-Channel UniFETTM FRFET® MOSFET
©2012 Fairchild Semiconductor Corporation
FDA24N50F Rev. C2
www.fairchildsemi.com
8
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Definition of Terms
AccuPower™
AX-CAP®*
BitSiC™
Build it Now™
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仙童 ™
®
™
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Rev. I68
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