2SC4520
No.3139-1/4
Features
•Adoption of FBET, MBIT processes.
•Large current capacity.
•Low collector-to-emitter saturation voltage.
•High-speed switching.
•Small-sized package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 60 V
Collector-to-Emitter Voltage VCEO 45 V
Emitter-to-Base Voltage VEBO 5V
Collector Current IC1.5 A
Collector Current (Pulse) ICP 3A
Collector Dissipation PC
Mounted on a ceramic board (250mm
2
✕0.8mm)
1.3 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=45V, IE=0A 1 μA
Emitter Cutoff Current IEBO VEB=3V, IC=0A 1 μA
Marking : CK Continued on next page.
Ordering number : EN3139A
33110JB TK IM / 92304TN (PC)/D2598HA (KT)/7059MO, TS
SANYO Semiconductors
DATA SHEET
2SC4520 NPN Epitaxial Planar Silicon Transistor
High-Speed Switching Applications
www.semiconductor-sanyo.com/network
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
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instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
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2SC4520
No.3139-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
DC Current Gain hFE1V
CE=2V, IC=100mA 100* 400*
hFE2V
CE=2V, IC=1.5A 40
Gain-Bandwidth Product fTVCE=2V, IC=100mA 300 MHz
Output Capacitance Cob VCB=10V, f=1MHz 13 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=800mA, IB=40mA 0.25 0.7 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=800mA, IB=40mA 0.9 1.3 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞45 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 5 V
Turn-ON T ime ton See specified Test Circuit. 50 100 ns
Storage T ime tstg See specified Test Circuit. 150 270 ns
T urn-OFF Time toff See specified Test Circuit. 180 350 ns
*: The 2SC4520 is classified by 100mA hFE as follows:
Rank R S T
hFE 100 to 200 140 to 280 200 to 400
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7007B-004
VR
RB
RL
VCC=25VVBE= --1V
++
50Ω
IC=20IB1= --20IB2=800mA
INPUT OUTPUT
100μF 470μF
PW=20μs
IB1
IB2
D.C.≤1%
2SC4520
No.3139-3/4
IC -- VCE
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
VCE(sat) -- IC
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
hFE -- IC
Collector Current, IC -- A
DC Current Gain, hFE
fT -- IC
Collector Current, IC -- mA
Gain-Brandwidth Product, fT -- MHz
Cob -- VCB
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
VBE(sat) -- IC
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
SW Time -- IC
Collector Current, IC -- A
Switching T ime, SW Time -- ns
ITR07160
0.4
0.6
1.0
0.8
0.2
0012 453
ITR07159
IB=0mA
0.6
0.2
1.6
1.4
0.8
1.0
1.2
0.4
00 0.2 0.4 0.6 0.8 1.21.0
VCE=2V
0.5mA
1.0mA
1.5mA
2.0mA
2.5mA
3.0mA
3.5mA
4.0mA
Ta=75°C
25°C
--25
°
C
ITR07165
5
3
1.0
7
7
5
3
2
23 0.1 1.00.01 57 2 3 57 2 357
ITR07163
1000
7
7
5
5
3
2
2
100
7
7
5
5
3
3
2
10
775532753232
0.01 0.1 1.0 ITR07164
71.0
527
10
35 235
f=1MHz
IC / IB=20
IC / IB=20
ITR07166
7
5
5
3
3
2
2
10
100
2257
0.1 1.0
3
VCC=25V
IC=20IB1= --20IB2
tstg
ton
tf
Ta=
--25
°C
25°C
75°C
Ta= --25°C
25°C
75°C
ITR07162
5
5
3
3
2
7
7
100
710 100 1000
23 57 72235
VCE=2V
ITR07161
3
2
5
5
3
2
7
7
100
1000
0.01 1.00.1
57 723 5723 5 23
VCE=2V
Ta=75°C
--25°C
25
°
C
2SC4520
No.3139-4/4
PS
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
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This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
PC -- Ta
A S O
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
Ambient Temperature, Ta -- °C
Collector Dissipation, PC -- W
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0020 60
40 80 100 120 140 160
ITR07168
ITR07167
5
3
2
0.1
1.0
7
5
5
3
3
2
2
7
7723 101.0 552357
10ms
100ms
1ms
DC operation
Mounted on a ceramic board (250mm2✕0.8mm)
Ta=25°C
Single pulse
Mounted on a ceramic board (250mm
2
✕0.8mm)
ICP=3A
IC=1.5A
