2SC4520 Ordering number : EN3139A SANYO Semiconductors DATA SHEET 2SC4520 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features * * * * * Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. High-speed switching. Small-sized package. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol Conditions Ratings Unit VCBO VCEO 60 45 V VEBO IC 5 V Collector Dissipation ICP PC Junction Temperature Tj Storage Temperature Tstg Mounted on a ceramic board (250mm20.8mm) V 1.5 A 3 A 1.3 W 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions Ratings min typ Unit max VCB=45V, IE=0A 1 A VEB=3V, IC=0A 1 A Marking : CK Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 33110JB TK IM / 92304TN (PC)/D2598HA (KT)/7059MO, TS No.3139-1/4 2SC4520 Continued from preceding page. Parameter Symbol Ratings Conditions min Unit max DC Current Gain hFE1 hFE2 Gain-Bandwidth Product fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO IC=1mA, RBE= IE=10A, IC=0A Turn-ON Time ton See specified Test Circuit. 50 100 ns Storage Time tstg See specified Test Circuit. 150 270 ns Turn-OFF Time toff See specified Test Circuit. 180 350 ns *: The 2SC4520 is classified by 100mA hFE as follows: Rank R S hFE 100 to 200 Package Dimensions 140 to 280 VCE=2V, IC=100mA VCE=2V, IC=1.5A VCE=2V, IC=100mA typ 100* 400* 40 300 VCB=10V, f=1MHz IC=800mA, IB=40mA MHz 13 IC=800mA, IB=40mA IC=10A, IE=0A pF 0.25 0.7 V 0.9 1.3 V 60 V 45 V 5 V T 200 to 400 Switching Time Test Circuit unit : mm (typ) 7007B-004 IB1 RB INPUT PW=20s D.C.1% OUTPUT IB2 RL VR 50 + 100F VBE= --1V + 470F VCC=25V IC=20IB1= --20IB2=800mA No.3139-2/4 2SC4520 IC -- VCE 1.0 IC -- VBE 1.6 VCE=2V 1.4 3.0mA 2.5mA 0.6 2.0mA 1.5mA 0.4 1.0mA 1.2 1.0 0.8 Ta=7 5C 25C --25C 3.5mA 0.8 Collector Current, IC -- A Collector Current, IC -- A 4.0mA 0.6 0.4 0.2 0.5mA 0.2 IB=0mA 0 0 1 2 0 3 4 0 5 Collector-to-Emitter Voltage, VCE -- V Gain-Brandwidth Product, f T -- MHz 7 DC Current Gain, hFE 5 Ta=75C 2 0.6 25C --25C 100 7 5 3 0.8 1.0 VCE=2V 5 3 2 100 7 5 3 2 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 7 2 10 3 5 7 100 2 3 5 7 1000 2 ITR07162 Collector Current, IC -- mA ITR07161 Cob -- VCB 7 VCE(sat) -- IC 2 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV f=1MHz Output Capacitance, Cob -- pF 5 3 2 10 7 5 1000 7 5 3 2 25C Ta= --25 C 100 7 3 75C 5 5 7 2 1.0 3 5 7 2 10 Collector-to-Base Voltage, VCB -- V 3 5 7 0.01 5 2 3 5 7 0.1 2 3 5 Switching Time, SW Time -- ns 25C 1.0 Ta= --25C 7 75C 5 2 3 ITR07164 VCC=25V IC=20IB1= --20IB2 3 2 1.0 SW Time -- IC 5 IC / IB=20 3 5 7 Collector Current, IC -- A ITR07163 VBE(sat) -- IC 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 1.2 ITR07160 f T -- IC 7 VCE=2V 3 0.4 Base-to-Emitter Voltage, VBE -- V hFE -- IC 1000 0.2 ITR07159 tstg 2 100 7 ton 5 tf 3 2 10 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 ITR07165 0.1 2 3 5 7 Collector Current, IC -- A 1.0 2 ITR07166 No.3139-3/4 2SC4520 ASO 5 Collector Current, IC -- A ms 0m s s 1m 10 10 IC=1.5A Collector Dissipation, PC -- W 3 2 PC -- Ta 1.4 ICP=3A 1.0 7 5 DC op era 3 tio 2 n 0.1 7 5 Ta=25C Single pulse Mounted on a ceramic board (250mm20.8mm) 3 2 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 1.2 M ou nt 1.0 ed on ac er 0.8 am ic bo ar 0.6 d (2 50 m 0.4 m2 0. 8m m ) 0.2 0 5 7 ITR07167 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 160 ITR07168 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No.3139-4/4