TSUS5400, TSUS5401, TSUS5402 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES * * * * * * * * * * * Package type: leaded Package form: T-13/4 Dimensions (in mm): O 5 Leads with stand-off Peak wavelength: p = 950 nm High reliability Angle of half intensity: = 22 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC * Halogen-free according to IEC 61249-2-21 definition 94 8390 DESCRIPTION TSUS5400 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. in APPLICATIONS * Infrared remote control and free air transmission systems with low forward voltage and small package requirements * Emitter in transmissive sensors * Emitter in reflective sensors PRODUCT SUMMARY COMPONENT Ie (mW/sr) TSUS5400 14 TSUS5401 17 TSUS5402 20 Note Test conditions see table "Basic Characteristics" (deg) P (nm) tr (ns) 22 22 22 950 950 950 800 800 800 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk Bulk Bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk T-13/4 T-13/4 T-13/4 TSUS5400 TSUS5401 TSUS5402 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient tp/T = 0.5, tp = 100 s tp = 100 s t 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB SYMBOL VALUE UNIT VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA 5 150 300 2.5 170 100 - 40 to + 85 - 40 to + 100 260 230 V mA mA A mW C C C C K/W Note Tamb = 25 C, unless otherwise specified Document Number: 81056 Rev. 1.7, 25-Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 TSUS5400, TSUS5401, TSUS5402 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 230 K/W 80 60 40 20 100 80 60 RthJA = 230 K/W 40 20 0 0 10 21313 20 30 40 50 60 70 80 90 0 100 0 Tamb - Ambient Temperature (C) 21314 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION Forward voltage Temperature coefficient of VF Reverse current SYMBOL MIN. TYP. MAX. 1.7 IF = 100 mA, tp = 20 ms VF 1.3 IF = 100 mA TKVF - 1.3 UNIT V mV/K VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj 30 pF IF = 20 mA TKe - 0.8 %/K 22 deg Peak wavelength IF = 100 mA p 950 nm Spectral bandwidth IF = 100 mA 50 nm Junction capacitance Temperature coefficient of e Angle of half intensity Temperature coefficient of p Rise time Fall time 100 A IF = 100 mA TKp 0.2 nm/K IF = 100 mA tr 800 ns IF = 1.5 A tr 400 ns IF = 100 mA tf 800 ns IF = 1.5 A tf 400 ns d 2.9 mm Virtual source diameter Note Tamb = 25 C, unless otherwise specified TYPE DEDICATED CHARACTERISTICS PARAMETER Forward voltage TEST CONDITION IF = 1.5 A, tp = 100 s IF = 100 mA, tp = 20 ms Radiant intensity IF = 1.5 A, tp = 100 s Radiant power IF = 100 mA, tp = 20 ms PART SYMBOL TYP. MAX. UNIT TSUS5400 VF MIN. 2.2 3.4 V TSUS5401 VF 2.2 3.4 V TSUS5402 VF 2.2 2.7 V TSUS5400 Ie 7 14 35 mW/sr TSUS5401 Ie 10 17 35 mW/sr TSUS5402 Ie 15 20 35 mW/sr TSUS5400 Ie 60 140 mW/sr TSUS5401 Ie 85 160 mW/sr TSUS5402 Ie 120 190 mW/sr TSUS5400 e 13 mW TSUS5401 e 14 mW TSUS5402 e 15 mW Note Tamb = 25 C, unless otherwise specified www.vishay.com 2 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81056 Rev. 1.7, 25-Jun-09 TSUS5400, TSUS5401, TSUS5402 Infrared Emitting Diode, 950 nm, GaAs Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified 1000 Ie - Radiant Intensity (mW/sr) I F - Forward Current (A) 10 1 I FSM = 2.5 A ( Single Pulse ) tp/T = 0.01 10 0 0.05 0.1 0.5 1.0 10 -1 -2 10 94 7989 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 94 7997 10 4 Fig. 6 - Radiant Intensity vs. Forward Current 1000 10 3 - Radiant Power (mW) e I F - Forward Current (mA) TSUS5400 10 10 2 10 4 10 2 10 1 10 0 0 1 2 3 TSUS 5402 100 TSUS5400 10 1 0.1 4 10 0 V F - Forward Voltage (V) 94 7996 10 1 10 2 10 3 I F - Forward Current (mA) 94 7998 Fig. 4 - Forward Current vs. Forward Voltage 10 4 Fig. 7 - Radiant Power vs. Forward Current 1.2 1.6 1.1 IF = 10 mA 1.2 1.0 Ie rel; e rel VF rel - Relative Forward Voltage (V) 100 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) Fig. 3 - Pulse Forward Current vs. Pulse Duration 10 -1 TSUS 5401 TSUS 5402 0.9 0.8 0.4 0.8 0.7 0 94 7990 IF = 20 mA 20 40 60 80 100 Tamb - Ambient Temperature (C) 0 - 10 0 10 94 7993 Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Document Number: 81056 Rev. 1.7, 25-Jun-09 50 100 140 T amb - Ambient Temperature (C) Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 TSUS5400, TSUS5401, TSUS5402 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs 0 I e rel - Relative Radiant Intensity e rel - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 10 20 30 40 1.0 0.9 50 0.8 60 70 0.7 IF = 100 mA 0 900 80 0.6 1000 950 - Wavelength (nm) 94 7994 0.4 0.2 0 0.2 0.4 0.6 94 7999 Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters C 0.15 A 0.15 7.7 < 0.7 0.3 8.7 11.9 0.3 (4.1) 5.8 R 2.49 (sphere) 34.9 0.55 Area not plane 0.25 O 5 0.15 1 min. 1.1 0.5 0.5 + 0.15 - 0.05 technical drawings according to DIN specifications + 0.15 - 0.05 2.54 nom. 6.544-5258.01-4 Issue: 5; 19.05.09 96 12119 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81056 Rev. 1.7, 25-Jun-09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1