EGF1A - EGF1D
EGF1A-EGF1D, Rev. D2001 Fairchild Semiconductor Corporation
EGF1A - EGF1D
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics TA = 25°C unless otherwise noted
Features
•Low forward voltage drop.
•Low profile package.
•Fast switching for high efficiency.
SMA/DO-214AC
COLOR BAND DENOTES CA THODE
Thermal Characteristics
Symbol
Parameter
Device
Units
1A 1B 1C 1D
VF Forward Voltage @ 1.0 A 1.0 V
trr Reverse Recovery Time
I
F = 0.5 A, IR = 1.0 A, IRR = 0.25 A 50 ns
IR Reverse Current @ rated VR TA = 25°C
TA = 100°C 10
100 µA
µA
CT Total Capacitance
V
R = 4.0 V, f = 1.0 MHz 15 pF
Value
Symbol
Parameter 1A 1B 1C 1D
Units
VRRM Maximum Repetitive Reverse Volt age 50 100 150 200 V
IF(AV) Average Rectified Forward Current, @ TL = 100°C 1.0 A
IFSM Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave 30 A
Tstg Storage Temperature Range -65 to +175 °C
TJ Operating Junction Temperat ure -65 to +175 °C
Symbol
Parameter
Value
Units
PD Power Dissipation 2.0 W
RθJA Thermal Resistance, Junctio n to Ambient* 85 °C/W
RθJL Thermal Resistanc e, Junctio n to Lead* 30 °C/W
*Device mounted on FR-4 PCB 0.013 mm.
EGF1A - EGF1D
EGF1A-EGF1D, Rev. D2001 Fairchild Semiconductor Corporation
Typical Characteristics
Pulse
Generator
(Note 2)
50Ω
NONINDUCTIVE 50Ω
NONINDUCTIVE
DUT
(-)
(+)
OSCILLOSCOPE
(Note 1)
50Ω
NONINDUCTIVE
50V
(approx)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Reverse Recovery Time Characterstic and Test Circuit Diagram
12 51020 50100
0
10
20
30
40
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
1.0cm SET TIME BASE FOR
trr
+0.5A
0
-0.25A
-1.0A
5/ 10 ns/ cm
0 20406080100120140
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage [%]
Reverse Current, IR [mA]
T = 25 C
º
J
T = 25 C
º
A
T = 100 C
º
A
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
0.01
0.1
1
10
100
Forward Voltage, VF [V]
Forward Current, IF [A]
T = 25 C
º
J
Puls e Wi dth = 30 0µ
µµ
µS
2% Dut y Cycle
T = 25 C
º
A
0.1 0.5 1 2 5 10 20 50 100 500
0
10
20
30
40
50
60
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
0 255075100125150175
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Lead Temperature [ºC]
Average Rectified Forward Current, IF [A]
RESISTIVE OR
INDUCTIVE LOAD
P.C. B . MO UNTE D
O N 0.2 x 0.2 "
(5.0 x 5.0 mm )
CO PP ER P A D AREAS
Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics
Figure 3. Non-Repetitive Surge Current Figure 4. Reverse Current vs Reverse Voltage
Figure 5. Total Capacitance
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
Rev. H4
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
STAR*POWER is used under license
VCX™
