BYM359X-1500,127 - NXP Semiconductors

Philips Semiconductors Product specification

Dual diode BYM359X

fast, high-voltage

FEATURES SYMBOL QUICK REFERENCE DATA

• Low forward volt drop DAMPER MODULATOR

• Fast switching

• Soft recovery characteristic VR=1500 V VR=800 V

• High thermal cycling

performance VF ≤ 1.3 V VF ≤ 1.45 V

• Isolated mounting tab IF(RMS) =15.7 A IF(RMS) = 11 A

IFSM ≤ 60 A IFSM ≤ 60 A

trr ≤ 300 ns trr ≤ 145 ns

GENERAL DESCRIPTION PINNING SOT186A

Combined damper and modulator PIN DESCRIPTION

diodes in an isolated plastic

envelopeforhorizontaldeflectionin 1 damper cathode

colour TV and PC monitors.

The BYM359X contains diodes 2 common anode/cathode

with performance characteristics

designed specifically for 3 modulator anode.

applications from 16kHz to 56kHz

The BYM359X series is supplied in

the conventional leaded SOT186A

package.

LIMITING VALUES

Tj = 25 ˚C unless otherwise stated DAMPER MODULATOR

SYMBOL PARAMETER CONDITIONS MIN MAX MIN MAX UNIT

VRSM Peak non-repetitive reverse - 1500 - 800 V

voltage.

VRRM Peak repetitive reverse voltage - 1500 - 600 V

VRWM Crest working reverse voltage - 1300 - 600 V

IF(AV) Average forward current sinusoidal;a=1.57 - 10 - 8 A

IF(RMS) RMS forward current - 15.7 - 11.0 A

IFRM Peak repetitive forward current t=25 µs δ= 0.5 - 20 - 16.0 A

Ths ≤ 83 ˚C

IFSM Peak non-repetitive forward t = 10ms - 60 - 60 A

current t = 8.3 ms - 66 - 66 A

sinusoidal;

with reapplied

VRWM(MAX)

Tstg Storage temperature -40 150 -40 150 ˚C

TJOperating junction temperature - 150 - 150 ˚C

damper modulator

123

case

December 1999 1 Rev 1.200

Philips Semiconductors Product specification

Dual diode BYM359X

fast, high-voltage

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - - 2500 V

three terminals to external waveform;

heatsink R.H. ≤ 65% ; clean and dustfree

Cisol Capacitance from T2 to external f = 1 MHz - 10 - pF

heatsink

THERMAL RESISTANCES DAMPER MODULATOR

SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT

Rth j-hs Thermal resistance junction to with heatsink - 4.8 - 4.8 K/W

heatsink compound

Rth j-a Thermal resistance junction to in free air. 55 - - 55 K/W

ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated DAMPER MODULATOR

SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT

VFForward voltage IF = 6.5 A 1.1 1.45 1.15 1.55 V

IF = 6.5 A; Tj = 125˚C 1.05 1.3 1.1 1.45 V

IRReverse current VR = VRWM 10 250 10 100 µA

VR = VRWM 50 500 100 600 µA

Tj = 100 ˚C

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated DAMPER MODULATOR

SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT

trr Reverse recovery time IF = 1 A; VR ≥ 30 V; 200 300 125 145 ns

-dIF/dt = 50 A/µs

QsReverse recovery charge 2 A,30 V,20 A/µs 1.2 2.0 0.5 0.7 µC

Vfr Peak forward recovery voltage IF = 6.5 A; 27 - 18.0 - V

dIF/dt = 50 A/µs

December 1999 2 Rev 1.200

Philips Semiconductors Product specification

Dual diode BYM359X

fast, high-voltage

Fig.1. Definition of trr, Qs and Irrm

Fig.2. Definition of Vfr

Fig.3. Modulator maximum forward dissipation,

PF = f(IF(AV)); square wave current waveform;

parameter D = duty cycle = tp/T.

Fig.4. Modulator maximum forward dissipation,

PF = f(IF(AV)); sinusoidal current waveform; parameter

a = form factor = IF(RMS)/IF(AV).

Fig.5. Modulator maximum non-repetitive rms forward

current. IF = f(tp); sinusoidal current waveform;

Tj = 150˚C prior to surge with reapplied VRWM.

Fig.6. Modulator typical and maximum forward

characteristic; IF = f(VF); parameter Tj

0 2 4 6 8

BY329

IF(AV) / A

PF / W

2.8 2.2 1.9

a = 1.57

Ths(max) / C

150

102

126

Vo = 1.25 V

Rs = 0.03 Ohms

100%

time

dt F

Irrm

trr

25%

1ms 10ms 0.1s 1s 10s

tp / s

IFS(RMS) / A BY229

IFSM

time

Vfr

0 1

BY229F

VF / V

IF / A

0 2

0.5 1.5

max

typ

Tj = 150 C

Tj = 25 C

0 2 4 6 8 10 12

BY329

IF(AV) / A

PF / W

Ths(max) / C

150

102

126

0.5

0.2

0.1

D = 1.0

D =

tptp

Vo = 1.25 V

Rs = 0.03 Ohms

December 1999 3 Rev 1.200

Philips Semiconductors Product specification

Dual diode BYM359X

fast, high-voltage

Fig.7. Modulator maximum Qs at Tj = 25˚C and 150˚C

Fig.8. Modulator maximum trr measured to 25% of Irrm;

Tj = 25˚C and 150˚C

Fig.9. Modulator typical junction capacitance Cd at

f = 1 MHz; Tj = 25˚C

Fig.10. Modulator transient thermal impedance

Zth = f(tp)

1 100

BY329

-dIF/dt (A/us)

Qs / uC

0.1 10

2 A

IF = 10 A

10 A

1 A

2 A

Tj = 150 C

Tj = 25 C

1 100

100

1 10 1000

BY329

Cd / pF

VR / V

1us 10us 100us 1ms 10ms 100ms 1s 10s

0.001

0.01

0.1

BY229F

pulse width, tp (s)

Transient thermal impedance, Zth j-hs (K/W)

D =

1 10 100

BY329

-dIF/dt (A/us)

trr / ns

1000

100

1 A

IF = 10 A

Tj = 150 C

Tj = 25 C

10A

December 1999 4 Rev 1.200

Philips Semiconductors Product specification

Dual diode BYM359X

fast, high-voltage

Fig.11. Damper maximum non-repetitive rms forward

current. IF = f(tp); sinusoidal current waveform;

Tj = 150˚C prior to surge with reapplied VRWM.

Fig.12. Damper transient thermal impedance

Zth = f(tp)

Fig.13. Damper forward characteristic IF = f(VF);

parameter Tj

1ms 10ms 0.1s 1s 10s

tp / s

IFS(RMS) / A BY359

IFSM

0 1.0 2.0

IF / A

VF / V

max

typ

Tj=150C

Tj=25C

BY359

1us 10us 100us 1ms 10ms 100ms 1s 10s

0.001

0.01

0.1

BY359F

pulse width, tp (s)

Transient thermal impedance, Zth j-hs (K/W)

D =

December 1999 5 Rev 1.200

Philips Semiconductors Product specification

Dual diode BYM359X

fast, high-voltage

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

Fig.14. SOT186A; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

10.3

max

3.2

3.0

4.6

max

2.9 max

2.8

seating

plane

6.4

15.8

max

0.6

2.5

2.54

5.08

123

3 max.

not tinned

0.5

2.5

0.9

0.7

0.4

15.8

max. 19

max.

13.5

min.

Recesses (2x)

2.5

0.8 max. depth

1.0 (2x)

1.3

December 1999 6 Rev 1.200

Philips Semiconductors Product specification

Dual diode BYM359X

fast, high-voltage

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1999

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

December 1999 7 Rev 1.200