RF & Protection Devices
Datasheet
Revision 1.2, 2013-07-29
BFP450
Linear Low Noise Silicon Bipolar RF Transistor
Edition 2013-07-29
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP450
Datasheet 3 Revision 1.2, 2013-07-29
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
BFP450, Linear Low Noise Silicon Bipolar RF Transistor
Revision History: 2013-07-29, Revision 1.2
Page Subjects (changes since previous revision)
This datasheet replaces the revision from 2012-09-11.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and information available in the datasheet have been expanded
and updated.
BFP450
Table of Contents
Datasheet 4 Revision 1.2, 2013-07-29
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.4 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.5 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
7 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table of Contents
BFP450
List of Figures
Datasheet 5 Revision 1.2, 2013-07-29
Figure 4-1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFP450 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in mA . . . . . . . . . . . . 16
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 17
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 18
Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters . . . . . . . . . . . . . . . . . 19
Figure 5-9 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5-10 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 90 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5-11 Maximum Power Gain Gmax = f (IC), VCE = 3 V, = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-12 Maximum Power Gain Gmax = f (VCE), IC = 90 mA, = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 21
Figure 5-13 Input Matching S11 = f (f), VCE = 3 V, IC = 50 / 90 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 5-14 Source Impedance for Minimum Noise Figure = f (f), VCE = 3 V, IC = 50 / 90 mA . . . . . . . . . . . . . 22
Figure 5-15 Output Matching S22 = f (f), VCE = 3 V, IC = 50 / 90 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-16 Noise Figure NFmin = f (f), VCE = 3 V, IC = 50 / 90 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-17 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt= Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-18 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω= Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-19 Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . 25
Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-3 Marking Description (Marking BFP450: ANs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
List of Figures
BFP450
List of Tables
Datasheet 6 Revision 1.2, 2013-07-29
Table 3-1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 4-1 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 5-1 DC Characteristics at TA= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5-2 General AC Characteristics at TA= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 5-3 AC Characteristics, VCE = 3 V, f= 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 5-4 AC Characteristics, VCE = 3 V, f= 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-5 AC Characteristics, VCE = 3 V, f= 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5-6 AC Characteristics, VCE = 3 V, f= 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-7 AC Characteristics, VCE = 3 V, f= 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5-8 AC Characteristics, VCE = 3 V, f= 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 5-9 AC Characteristics, VCE = 3 V, f= 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
List of Tables
BFP450
Product Brief
Datasheet 7 Revision 1.2, 2013-07-29
1 Product Brief
The BFP450 is a high linearity wideband NPN bipolar RF transistor. The collector design supports voltages up to
VCEO = 4.5 V and currents up to IC = 170 mA. With its high linearity at currents as low as 50 mA the device supports
energy efficient designs. The typical transition frequency is approximately 24 GHz, hence the device offers high
power gain at frequencies up to 3 GHz in amplifier applications. The device is housed in an easy to use plastic
package with visible leads.
BFP450
Features
Datasheet 8 Revision 1.2, 2013-07-29
2 Features
Applications Examples
Driver amplifier
• ISM bands 434 and 868 MHz
• 1.9 GHz cordless phones
• CATV LNA
Transmitter driver amplifier
• 2.4 GHz WLAN and Bluetooth
Output stage LNA for active antennas
• TV, GPS, SDARS, 2.4 GHz WLAN, etc
Suitable for 3 - 5.5 GHz oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
• Highly linear low noise driver amplifier for all RF frontends up to
3 GHz
• Based on Infineon´s reliable high volume 25 GHz silicon bipolar
technology
• Output compression point OP1dB = 19 dBm
at 90 mA, 3 V, 1.9 GHz, 50 Ω system
• Output 3rd order intermodulation point OIP3 = 31 dBm
at 90 mA, 3 V, 1.9 GHz, 50 Ω system
• Maximum available gain Gma = 15.5 dB at 50 mA, 3 V, 1.9 GHz
• Minimum noise figure NFmin = 1.7 dB at 50 mA, 3 V, 1.9 GHz
• Pb-free (RoHS compliant) and halogen-free package with
visible leads
• Qualification report according to AEC-Q101 available
Product Name Package Pin Configuration Marking
BFP450 SOT343 1 = B 2 = E 3 = C 4 = E ANs
1
2
3
4
BFP450
Maximum Ratings
Datasheet 9 Revision 1.2, 2013-07-29
3 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 3-1 Maximum Ratings
Parameter Symbol Values Unit Note / Test Condition
Min. Max.
Collector emitter voltage VCEO Open base
–4.5V
TA = 25 °C
–4.1V
TA = -55 °C
Collector emitter voltage VCES – 15 V E-B short circuited
Collector base voltage VCBO – 15 V Open emitter
Emitter base voltage VEBO – 1.5 V Open collector
Collector current IC–170mA–
Base current IB–10mA–
Total power dissipation1)
1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Ptot –500mWTS≤90 °C
Junction temperature TJ–150°C–
Storage temperature TStg -55 150 °C –
BFP450
Thermal Characteristics
Datasheet 10 Revision 1.2, 2013-07-29
4 Thermal Characteristics
Figure 4-1 Total Power Dissipation Ptot = f (Ts)
Table 4-1 Thermal Resistance
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Junction - soldering point1)
1) For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
RthJS –120–K/W–
Ts [°C]
Ptot [mW]
0
100
200
300
400
500
600
0 50 100 150
Ts [°C]
Ptot [mW]
0
100
200
300
400
500
600
0 50 100 150
BFP450
Electrical Characteristics
Datasheet 11 Revision 1.2, 2013-07-29
5 Electrical Characteristics
5.1 DC Characteristics
5.2 General AC Characteristics
Table 5-1 DC Characteristics at TA=25°C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Collector emitter breakdown voltage V(BR)CEO 4.5 5 – V IC=1mA, IB=0
Open base
Collector emitter leakage current ICES ––1
1)
1) Maximum values not limited by the device but the short cycle time of the 100% test
μAVCE =15V, VBE =0
–130
1) nA VCE =3V, VBE =0
E-B short circuited
Collector base leakage current ICBO –130
1) nA VCB =3V, IE=0
Open emitter
Emitter base leakage current IEBO –0.053
1) μAVEB =0.5V, IC=0
Open collector
DC current gain hFE 60 95 130 VCE =4V, IC=50mA
50 85 120 VCE =3V, IC=90mA
Pulse measured
Table 5-2 General AC Characteristics at TA=25°C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Transition frequency fT18 24 – GHz VCE =3V, IC=90mA,
f=1GHz
Collector base capacitance CCB – 0.48 0.8 pF VCB =3V, VBE =0 V
f=1MHz
Emitter grounded
Collector emitter capacitance CCE –1.2–pFVCE =3V, VBE =0 V
f=1MHz
Base grounded
Emitter base capacitance CEB –1.7–pFVEB =0.5V, VCB =0 V
f=1MHz
Collector grounded
BFP450
Electrical Characteristics
Datasheet 12 Revision 1.2, 2013-07-29
5.3 Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
Figure 5-1 BFP450 Testing Circuit
Table 5-3 AC Characteristics, VCE = 3 V, f=150MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
High linearity operation point Gms –34.5– IC=50mA
Class A operation point Gms –35.5– IC=90mA
Transducer gain dB ZS= ZL= 50 Ω
High linearity operation point S21 –33– IC=50mA
Class A operation point S21 –33.5– IC=90mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –1.55– IC=50mA
Associated gain Gass –32– IC=50mA
Linearity dBm ZS= ZL= 50 Ω
1 dB gain compression point OP1dB –19– IC=90mA
3rd order intercept point OIP3 –30.5– IC=90mA
IN
OUT
Bias -T
Bias-T
B
(Pin 1)
EC
E
VC
Top View
VB
BFP450
Electrical Characteristics
Datasheet 13 Revision 1.2, 2013-07-29
Table 5-4 AC Characteristics, VCE = 3 V, f=450MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
High linearity operation point Gms –28.5– IC=50mA
Class A operation point Gms –29– IC=90mA
Transducer gain dB ZS= ZL= 50 Ω
High linearity operation point S21 –25– IC=50mA
Class A operation point S21 –25– IC=90mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –1.55– IC=50mA
Associated gain Gass –27.5– IC=50mA
Linearity dBm ZS= ZL= 50 Ω
1 dB gain compression point OP1dB –19– IC=90mA
3rd order intercept point OIP3 –30– IC=90mA
Table 5-5 AC Characteristics, VCE = 3 V, f=900MHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
High linearity operation point Gms –23– IC=50mA
Class A operation point Gms –23.5– IC=90mA
Transducer gain dB ZS= ZL= 50 Ω
High linearity operation point S21 –18.5– IC=50mA
Class A operation point S21 –19– IC=90mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –1.6– IC=50mA
Associated gain Gass –23– IC=50mA
Linearity dBm ZS= ZL= 50 Ω
1 dB gain compression point OP1dB –19– IC=90mA
3rd order intercept point OIP3 –30.5– IC=90mA
BFP450
Electrical Characteristics
Datasheet 14 Revision 1.2, 2013-07-29
Table 5-6 AC Characteristics, VCE = 3 V, f= 1.5 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
High linearity operation point Gma –18– IC=50mA
Class A operation point Gma –18– IC=90mA
Transducer gain dB ZS= ZL= 50 Ω
High linearity operation point S21 –14– IC=50mA
Class A operation point S21 –14– IC=90mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –1.65– IC=50mA
Associated gain Gass –17– IC=50mA
Linearity dBm ZS= ZL= 50 Ω
1 dB gain compression point OP1dB –19– IC=90mA
3rd order intercept point OIP3 –31– IC=90mA
Table 5-7 AC Characteristics, VCE = 3 V, f= 1.9 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
High linearity operation point Gma –15.5– IC=50mA
Class A operation point Gma –15.5– IC=90mA
Transducer gain dB ZS= ZL= 50 Ω
High linearity operation point S21 9.5 11.5 – IC=50mA
Class A operation point S21 –11.5– IC=90mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –1.7– IC=50mA
Associated gain Gass –14– IC=50mA
Linearity dBm ZS= ZL= 50 Ω
1 dB gain compression point OP1dB –19– IC=90mA
3rd order intercept point OIP3 –31– IC=90mA
BFP450
Electrical Characteristics
Datasheet 15 Revision 1.2, 2013-07-29
Notes
1. AC parameter limits verified by random sampling
2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all
measured result
3. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Table 5-8 AC Characteristics, VCE = 3 V, f= 2.4 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
High linearity operation point Gma –13.5– IC=50mA
Class A operation point Gma –13.5– IC=90mA
Transducer gain dB ZS= ZL= 50 Ω
High linearity operation point S21 –9.5– IC=50mA
Class A operation point S21 –9.5– IC=90mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –1.8– IC=50mA
Associated gain Gass –12– IC=50mA
Linearity dBm ZS= ZL= 50 Ω
1 dB gain compression point OP1dB –19– IC=90mA
3rd order intercept point OIP3 –30– IC=90mA
Table 5-9 AC Characteristics, VCE = 3 V, f= 3.5 GHz
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Maximum power gain dB
High linearity operation point Gma –10– IC=50mA
Class A operation point Gma –10– IC=90mA
Transducer gain dB ZS= ZL= 50 Ω
High linearity operation point S21 –5.5– IC=50mA
Class A operation point S21 –6– IC=90mA
Minimum noise figure dB ZS=Zopt
Minimum noise figure NFmin –2.05– IC=50mA
Associated gain Gass –9– IC=50mA
Linearity dBm ZS= ZL= 50 Ω
1 dB gain compression point OP1dB –18.5– IC=90mA
3rd order intercept point OIP3 –29.5– IC=90mA
BFP450
Electrical Characteristics
Datasheet 16 Revision 1.2, 2013-07-29
5.4 Characteristic DC Diagrams
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in mA
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V
0 1 2 3 4 5
0
20
40
60
80
100
120
140
160
VCE [V]
IC [mA]
0.19mA
0.38mA
0.57mA
0.76mA
0.95mA
1.14mA
1.33mA
1.52mA
1.71mA
1.90mA
50
60
70
80
90
100
110
120
0.1 1 10 100 1000
IC [mA]
hFE
BFP450
Electrical Characteristics
Datasheet 17 Revision 1.2, 2013-07-29
Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
0.01
0.1
1
10
100
1000
0.6 0.65 0.7 0.75 0.8 0.85 0.9
V
BE
[V]
I
C
[mA]
0.0001
0.001
0.01
0.1
1
10
0.6 0.65 0.7 0.75 0.8 0.85 0.9
V
BE
[V]
I
B
[mA]
BFP450
Electrical Characteristics
Datasheet 18 Revision 1.2, 2013-07-29
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V
BFP450
Electrical Characteristics
Datasheet 19 Revision 1.2, 2013-07-29
5.5 Characteristic AC Diagrams
Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V
Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters
0 20 40 60 80 100 120 140 160 180
0
5
10
15
20
25
30
I
C
[mA]
f
T
[GHz]
3.00V
2.00V
1.00V
4.00V
0 20 40 60 80 100 120 140 160 180
18
20
22
24
26
28
30
32
34
IC [mA]
OIP3 [dBm]
3V, 0.9GHz
4V, 0.9GHz
3V, 1.9GHz
4V, 1.9GHz
BFP450
Electrical Characteristics
Datasheet 20 Revision 1.2, 2013-07-29
Figure 5-9 Collector Base Capacitance CCB = f (VCB), f = 1 MHz
Figure 5-10 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 90 mA
0 0.5 1 1.5 2 2.5 3 3.5 4
0
0.2
0.4
0.6
0.8
1
1.2
V
CB
[V]
C
cb
[pF]
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
0
3
6
9
12
15
18
21
24
27
30
33
36
39
42
f [GHz]
G [dB]
Gms
Gma
|S21|2
BFP450
Electrical Characteristics
Datasheet 21 Revision 1.2, 2013-07-29
Figure 5-11 Maximum Power Gain Gmax = f (IC), VCE = 3 V, = Parameter in GHz
Figure 5-12 Maximum Power Gain Gmax = f (VCE), IC = 90 mA, = Parameter in GHz
0 20 40 60 80 100 120 140 160 180 200
0
3
6
9
12
15
18
21
24
27
30
33
36
39
IC [mA]
G [dB]
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0
3
6
9
12
15
18
21
24
27
30
33
36
39
VCE [V]
G [dB]
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
BFP450
Electrical Characteristics
Datasheet 22 Revision 1.2, 2013-07-29
Figure 5-13 Input Matching S11 = f (f), VCE = 3 V, IC = 50 / 90 mA
Figure 5-14 Source Impedance for Minimum Noise Figure = f (f), VCE = 3 V, IC = 50 / 90 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.03 to 10 GHz
1
2
3
4 5 6 7 8 9 10
90 mA
50 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.45GHz
0.9GHz
1.9GHz
2.4GHz Ic = 50mA
Ic = 90mA
BFP450
Electrical Characteristics
Datasheet 23 Revision 1.2, 2013-07-29
Figure 5-15 Output Matching S22 = f (f), VCE = 3 V, IC = 50 / 90 mA
Figure 5-16 Noise Figure NFmin = f (f), VCE = 3 V, IC = 50 / 90 mA, ZS = Zopt
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.03 to 10 GHz
1
2
3
4
5 6 7 8 9 10
90 mA
50 mA
0 0.5 1 1.5 2 2.5 3
0
0.5
1
1.5
2
2.5
3
f [GHz]
NFmin [dB]
IC = 50mA
IC = 90mA
BFP450
Electrical Characteristics
Datasheet 24 Revision 1.2, 2013-07-29
Figure 5-17 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt= Parameter in GHz
Figure 5-18 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω= Parameter in GHz
0 20 40 60 80 100
0
0.5
1
1.5
2
2.5
3
Ic [mA]
NFmin [dB]
f = 0.45GHz
f = 0.9GHz
f = 1.9GHz
f = 2.4GHz
0 20 40 60 80 100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Ic [mA]
NF50 [dB]
f = 0.45GHz
f = 0.9GHz
f = 1.9GHz
f = 2.4GHz
BFP450
Electrical Characteristics
Datasheet 25 Revision 1.2, 2013-07-29
Figure 5-19 Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 1.9 GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA = 25 °C.
0 20 40 60 80 100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Ic [mA]
NF [dB]
ZS = ZSopt
ZS = 50Ω
BFP450
Simulation Data
Datasheet 26 Revision 1.2, 2013-07-29
6 Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest
versions before actually starting your design.
You find the BFP450 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these
circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is
ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin
configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP450 SPICE
GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP
model itself.
BFP450
Package Information SOT343
Datasheet 27 Revision 1.2, 2013-07-29
7 Package Information SOT343
Figure 7-1 Package Outline
Figure 7-2 Package Footprint
Figure 7-3 Marking Description (Marking BFP450: ANs)
Figure 7-4 Tape Dimensions
SOT343-PO
V08
1.25 ±0.1
0.1 MAX.
2.1±0.1
0.15
+0.1
-0.05
0.3
+0.1
2
±0.2
±0.1
0.9
3
2
4
1
A
+0.1
0.6
A
M
0.2
1.3
-0.05
-0.05
0.15
0.1
M
4x
0.1
0.1 MIN.
0.6
SOT343-FP
V08
0.8
1.6
1.15
0.9
XYs
56
Date code (YM)
2005, June
Type code
Manufacturer
Pin 1
SOT323-TP V02
0.2
4
2.15
8
2.3
1.1
Pin 1
Published by Infineon Technologies AG
www.infineon.com