IXA45IF1200HB - IXYS SEMICONDUCTOR

IXA45IF1200HB

Copack

XPT IGBT

2(C)

3(E)

(G) 1

Part number

IXA45IF1200HB

Backside: collector

C25

CE(sat)

VV1.8

CES

78

1200

=

V= V

I= A

Features / Ad vantages: Applications: Package:

● Easy paralleling due to the positive temperature

coefficient of the on-state voltage

● Rugged XPT design (Xtreme light Punch Through)

results in:

- short circuit rated for 10 µsec.

- very low gate charge

- low EMI

- square RBSOA @ 3x Ic

● Thin wafer technology combined with the XPT design

results in a competitive low VCE(sat)

● SONIC™ diode

- fast and soft reverse recovery

- low operating forward voltage

● AC motor drives

● Solar inverter

● Medical equipment

● Uninterruptible power supply

● Air-conditioning systems

● Welding equipment

● Switched-mode and resonant-mode

power supplies

● Inductive heating, cookers

● Pumps, Fans

TO-247

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

IXYS reserves the right to change limits, conditions and dimensions. 20100702bData according to IEC 60747and per semiconductor unless otherwise specified

IXA45IF1200HB

-di /dt = A/µs

T = °C

V

CES

V1200

collector emitter voltage

collector emitter saturation voltage

T = 25°C

collect or current A

78

A

C

VJ

Symbol Definition

Ratings

typ. max.min.Conditions Unit

45

V

CE(sat)

total power dissipation 325 W

collector emitter leakage current

6.5 V

turn-on delay time 70 ns

t

reverse bias safe operating area

A

V

GES

V±20

V

GEM

max. transient ga te emitte r vo l t a g e

T = °C

C

V

P

tot

gate emitter threshold voltage

RBSOA

105

±30

T = °C

VJ

V

max. DC gate voltage

I

C25

I

C

T = 25°C

VJ

I = A; V = 15 V

CGE

T = 25°C

VJ

V

GE(th)

I

CES

I = mA; V = V

CGECE

V = V ; V = 0 V

CE CES GE

I

GES

T = 25°C

VJ

gate emitter leakage current V = ±20 V

GE

2.1

5.95.4

mA

0.1 mA

0.1

500

G(on)

total gate charge V = V; V = 15 V; I = A

CE

Q

GE C

106 nC

t

E

d(on)

r

d(off)

f

on

off

40 ns

250 ns

100 ns

3.8 mJ

4.1 mJ

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load

V = V; I = A

V = ±15 V; R = Ω

CE C

GE G

V = ±15 V; R = Ω

GE G

V = V

CEmax

1200

short circuit safe operating area

µs

SCSOA

10T = °C

VJ

V = V; V = ±15 V

CE GE

short circuit duration

t

short circuit current

I

SC

R = Ω; non-repetitive

G

140 A

R

thJC

thermal resistance junction to case 0.38 K/W

V

RRM

V1200

max. repetitive rev ers e voltage T = 25°C

VJ

T = 25°C

forward current A

60

A

C

33T = °C

C

I

F25

I

F

T = 25°C

forward voltage V

2.20

V

VJ

1.95T = 125°C

VJ

V

F

I = A

F

T = 25°C

reverse current mA

*

mA

VJ

*T = 125°C

VJ

I

RR RRM

T = 125°C

VJ

Q

I

t

rr

RM

rr

3.5 µC

30 A

350 ns

reverse recovery charge

max. reverse recovery current

reverse recovery time

V =

I = A; V = 0 V

F

FGE

E

rec

0.9 mJ

reverse recovery energy

R

thJC

thermal resistance junction to case 0.7 K/W

V = V

T = 25°C

C

T = 25°C

VJ

T = °C

VJ

35

1.5

35

30

27

600

900

-600

600

I

CM

1.8

R

thCH

thermal resistance case to heatsink K/W

R

thCH

thermal resistance case to heatsink K/W

* not applicable, see Ices value above

IGBT

Diode

600 V

V = V

CEmax

900

80

125

nA

0.25

IXYS reserves the right to change limits, conditions and dimensions. 20100702bData according to IEC 60747and per semiconductor unless otherwise specified

IXA45IF1200HB

Ratings

Product Mar

k

in

g

Date Code

Part No.

Logo

IXYS

abcd

Assembly Code

Zyyww

Assembly Line

XXXXXXXXX

I

X

A

45

IF

1200

HB

Part number

IGBT

XPT IGBT

Gen 1 / std

Copack

TO-247AD (3)

=

Current Rating [A]

Reverse Voltage [V]

=

Package

T

op

°C

M

D

Nm1.2

mounting torque 0.8

T

VJ

°C150

virt ua l j un ctio n temp eratu re -40

Weight g6

Symbol Definition typ. max.min.Conditions

operation temperature

Unit

F

C

N120

mount ing for ce w i th cli p 20

I

RMS

RMS current 70 A

per terminal

125-40

TO-247

Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering

IXA45IF1200HB 507837Tube 30IXA45IF1200HBStandard

T

stg

°C150

storage temperature -40

threshold voltage V

mΩ

V

0 max

R

0 max

slope resistance *

1.1

39

1.25

28.3

Equivalent Circuits for Simulation

T =

VJ

IV

0

R

0

IGBT Diode

150 °C

* on die level

IXYS reserves the right to change limits, conditions and dimensions. 20100702bData according to IEC 60747and per semiconductor unless otherwise specified

IXA45IF1200HB

S

ØPØ P1 D2

D1

E1

4

123

L

L1

2x b2

3x b

b4

2x e

2x E2

D

E

Q

AA2

A1

C

Sym. Inches Millimeter

min. max. min. max.

A 0.185 0.209 4.70 5.30

A1 0.087 0.102 2.21 2.59

A2 0.059 0.098 1.50 2.49

D 0.819 0.845 20.79 21.45

E 0.610 0.640 15.48 16.24

E2 0.170 0.216 4.31 5.48

e 0.215 BSC 5.46 BSC

L 0.780 0.800 19.80 20.30

L1 - 0.177 - 4.49

Ø P 0.140 0.144 3.55 3.65

Q 0.212 0.244 5.38 6.19

S 0.242 BSC 6.14 BSC

b 0.039 0.055 0.99 1.40

b2 0.065 0.094 1.65 2.39

b4 0.102 0.135 2.59 3.43

c 0.015 0.035 0.38 0.89

D1 0.515 - 13.07 -

D2 0.020 0.053 0.51 1.35

E1 0.530 - 13.45 -

Ø P1 - 0.29 - 7.39

2(C)

3(E)

(G) 1

Outlines TO-247

IXYS reserves the right to change limits, conditions and dimensions. 20100702bData according to IEC 60747and per semiconductor unless otherwise specified

IXA45IF1200HB

0123

0

10

20

30

40

50

60

70

020406080

0

2

4

6

8

10

012345

0

10

20

30

40

50

60

70

V

CE

[V]

I

C

[A]

Q

G

[nC]

V

GE

[V]

9V

11 V

5 6 7 8 9 10111213

0

10

20

30

40

50

60

70

0 20406080100120140

0

5

10

15

20

13 V

20 40 60 80

3

4

5

6

E

[mJ]

E

on

Fig. 1 Typ. output characteristics

V

CE

[V]

I

C

[A]

V

GE

=15V

17 V

19 V

Fig. 2 Typ. output characteristics

I

C

[A]

Fig. 3 Typ. tranfer characteristics

V

GE

[V]

Fig. 4 Typ. turn-on gate charge

Fig. 5 Typ. switching energy vs. collector current

E

off

Fig. 6 Typ. switching energy vs. gate resistance

R

G

[]

E

[mJ]

I

C

[A]

E

on

E

off

T

VJ

=125°C

T

VJ

=25°C

V

GE

=15V

T

VJ

= 125°C

T

VJ

= 125°C

T

VJ

= 25°C

I

C

=35A

V

CE

=600V

R

G

=27

V

CE

= 600 V

V

GE

=±15V

T

VJ

= 125°C

I

C

= 35 A

V

CE

= 600 V

V

GE

=±15V

T

VJ

= 125°C

IGBT

IXYS reserves the right to change limits, conditions and dimensions. 20100702bData according to IEC 60747and per semiconductor unless otherwise specified

IXA45IF1200HB

300 400 500 600 700 800 900 1000 1100

1

2

3

4

5

6

7

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

10

20

30

40

50

60

Q

rr

[µC]

I

F

[A]

V

F

[V] di

F

/dt [A/µs]

T

VJ

= 125°C

T

VJ

= 25°C

T

VJ

=125°C

V

R

= 600 V

15 A

30 A

60 A

Fig. 7 Typ. Forward current versus V

F

Fig. 8 Typ. reverse recov.charge Q

rr

vs. di/dt

300 400 500 600 700 800 900 1000 1100

0

10

20

30

40

50

60

70

I

RR

[A]

di

F

/dt [A/µs]

T

VJ

= 125°C

V

R

= 600 V

15 A

30 A

60 A

Fig. 9 Typ. peak reverse current I

RM

vs. di/dt

300 400 500 600 700 800 900 1000 1100

0

100

200

300

400

500

600

700

t

rr

[ns]

di

F

/dt [A/µs]

15 A

30 A

60 A

T

VJ

= 125°C

V

R

=600 V

Fig. 10 Typ. recovery time t

rr

versus di/dt

Fig. 5 Typ. recovery energy E

rec

versus di/dt

300 400 500 600 700 800 900 1000 1100

0.0

0.4

0.8

1.2

1.6

2.0

E

rec

[mJ]

di

F

/dt [A/µs]

T

VJ

=125°C

V

R

= 600 V

15 A

30 A

60 A

0.001 0.01 0.1 1 10

0.01

0.1

1

t

p

[s]

Z

thJC

[K/W]

Fig. 12 Typ. transient thermal impedance

Diode

IGBT

Inverter-IGBT Inverter-FRD

R

i

t

i

R

i

t

i

1 0.070 0.0006 0.16 0.0005

2 0.113 0.2 0.12 0.004

3 0.055 0.006 0.15 0.02

4 0.142 0.05 0.27 0.15

Diode

IXYS reserves the right to change limits, conditions and dimensions. 20100702bData according to IEC 60747and per semiconductor unless otherwise specified