This is information on a product in full production.
August 2015 DocID11815 Rev 6 1/17
SD2941-10
HF/VHF/UHF RF power N-channel MOSFETs
Datasheet - production data
Figure 1. Pin connection
Features
•Gold metallization
•Excellent thermal stability
•Common source configuration
•POUT = 175 W min. with 15 dB gain @ 175
MHz, 50 V
•POUT = 135 W typ. with 14 dB gain @ 123 MHz,
28 V
•Low RDS(on)
•Thermally enhanced packaging for lower
junction temperatures
•In compliance with the 2002/95/EC1 European
directive
Description
The SD2941-10 is a gold metalized N-channel
MOS field-effect RF power transistor, intended for
use in 28 V to 50 V dc large signal applications up
to 230 MHz. It offers 25% lower RDS(on) than the
industry standard, with 20% higher PSAT than
ST's SD2931-10 device. The SD2941-10 is
housed in the low thermal M174 non-pedestal
package, offering 25% lower thermal resistance
than the industry standard, thus rendering it the
"best-in-class" transistor for ISM applications,
where reliability and ruggedness are critical
factor.
M174 Epoxy sealed
1. Drain
2. Source
3. Gate
4. Source
41
2
3
Table 1. Device summary
Order code Marking Base qty. Package Packaging(1)
SD2941-10W SD2941-10(1) 25 pcs M174 Plastic tray
1. For more details please refer to Chapter 7: Marking, packing and shipping specifications.
www.st.com
Contents SD2941-10
2/17 DocID11815 Rev 6
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7 Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 15
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
DocID11815 Rev 6 3/17
SD2941-10 Electrical data
17
1 Electrical data
1.1 Maximum rating
(TCASE = 25 °C)
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
V(BR)DSS(1)
1. TJ = 150 °C
Drain source voltage 130 V
VDGR(1) Drain-gate voltage (RGS = 1MΩ)130V
VGS Gate-source voltage ±40 V
IDDrain current 20 A
PDISS Power dissipation 389 W
TJMax. operating junction temperature 200 °C
TSTG Storage temperature -65 to +150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
RthJC Junction to case thermal resistance 0.45 °C/W
Electrical characteristics SD2941-10
4/17 DocID11815 Rev 6
2 Electrical characteristics
(TCASE = 25 °C)
Table 4. Static
Symbol Test conditions Min. Typ. Max. Unit
V(BR)DSS(1)
1. TJ = 150°C
VGS = 0 V IDS = 100 mA 130 V
IDSS VGS = 0 V VDS = 50 V 50 mA
IGSS VGS = 20 V VDS = 0 V 250 nA
VGS(Q) (2)
2. VGS(Q) sorted with alpha/numeric code marked on unit.
VDS = 10 V ID = 250 mA V
VDS(ON) VGS = 10 V ID = 10 A 2.0 V
GFS VDS = 10 V ID = 5 A 5 6 mho
CISS VGS = 0 V VDS = 50 V f = 1 MHz 415 pF
COSS VGS = 0 V VDS = 50 V f = 1 MHz 236 pF
CRSS VGS = 0 V VDS = 50 V f = 1 MHz 17 pF
Table 5. Dynamic
Symbol Test conditions Min. Typ. Max. Unit
POUT
VDD = 28 V IDQ = 250 mA f = 123 MHz 135
-
W
VDD = 50 V IDQ = 250 mA f = 175 MHz 175 200
GPS
VDD = 28 V IDQ = 250 mA POUT = 135 W f = 123 MHz 14
dB
VDD = 50 V IDQ = 250 mA POUT = 175 W f = 175 MHz 14 15.8
hD
VDD = 28 V IDQ = 250 mA POUT = 135 W f = 123 MHz 65
%
VDD = 50 V IDQ = 250 mA POUT = 175 W f = 175MHz 55 65
Load
Mismatch
VDD = 50 V IDQ = 250 mA POUT = 175 W f = 175MHz
All phase angles 10:1
VSWR
VDD = 28 V IDQ = 250 mA POUT = 135 W f = 123 MHz
All phase angles 25:1
DocID11815 Rev 6 5/17
SD2941-10 Electrical characteristics
17
Table 6. VGS sorts
Symbol Value Symbol Value Symbol Value
AA 1.5 - 1.6 E 2.4 - 2.5 P 3.3 - 3.4
BB 1.6 - 1.7 F 2.5 - 2.6 Q 3.4 - 3.5
CC 1.7 - 1.8 G 2.6 - 2.7 R 3.5 - 3.6
DD 1.8 - 1.9 H 2.7 - 2.8 S 3.6 - 3.7
EE 1.9 - 2.0 J 2.8 - 2.9 T 3.7 - 3.8
A 2.0 - 2.1 K 2.9 - 3.0 U 3.8 - 3.9
B 2.1 - 2.2 L 3.0 - 3.1 V 3.9 - 4.0
C 2.2 - 2.3 M 3.1 - 3.2
D 2.3 - 2.4 N 3.2 - 3.3
Impedance SD2941-10
6/17 DocID11815 Rev 6
3 Impedance
Figure 2. Impedance data schematic
Table 7. Impedance data @ 28 V
fZ
IN (Ω)Z
DL (100W) (Ω)Z
DL (140W) (Ω)
123 MHz 1.2 - j 3.3 2.0 + j 1.4 2.0 + j 0.73
Table 8. Impedance data @ 50 V
fZ
IN (Ω)Z
DL (Ω)
30 MHz 1.7 - j 5.7 6.8 + j 0.9
175 MHz 1.2 - j 2.0 2.0 + j 2.4
Typical Drain
Load Impedance
Typical Input
Impedance
G
Zin
ZDL
D
S
DocID11815 Rev 6 7/17
SD2941-10 Typical performance
17
4 Typical performance
Figure 3. Capacitance vs drain voltage Figure 4. Drain current vs gate voltage
Figure 5. Maximum thermal resistance vs case
temperature
Figure 6. Safe operating area
0 1020304050
VDS, DRAIN-SOURCE VOLTAGE (V)
10
100
1000
10000
C, CAPACITANCE (pF)
Ciss
Coss
Crss
f =1MHz
22.533.544.555.56
VGS, GATE-SOURCE VOLTAGE (V)
0
5
10
15
20
ID, DRAIN CURRENT (A)
Tc=-20 °C
Tc=+25 °C
Tc=+80 °C
VDS = 10 V
25 35 45 55 65 75 85
Tc, CASE TEMPERATURE (°C)
0.44
0.48
0.52
0.56
0.6
RTH(j-c) (°C/W)
1 10 100 1000
Vds(V)
1
10
100
Ids(A)
(1) Current in this area may be limited by Rds(on)
(1)
Typical performance SD2941-10
8/17 DocID11815 Rev 6
Figure 7. Power gain vs output power Figure 8. Efficiency vs output power
Figure 9. Input return loss vs output power Figure 10. Gain and efficiency vs output power
@ 28V and 100W load line
12
13
14
15
16
17
18
19
20
21
22
0 25 50 75 100 125 150 175 200 225 250 275
Pout (W)
Gain (dB)
Vdd = 50V
Idq = 250mA
100 MHz
175 MHz
0
10
20
30
40
50
60
70
80
0 25 50 75 100 125 150 175 200 225 250 275
Pout (W )
Nd (%)
Vdd = 50V
Idq = 250mA
100 MHz
175 MHz
0
4
8
12
16
20
24
0 25 50 75 100 125 150 175 200 225 250 275
Pout (W)
RTL (dB)
Vdd = 50V
Idq = 250mA
175 MHz
100 MHz
0
10
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
12
14
16
18
20
0 20 40 60 80 100 120 140 160
Efficiency (%)
Gain (dB)
Output Power (W)
Gain Efficiency
Freq = 123 MHz
Idq = 250mA
DocID11815 Rev 6 9/17
SD2941-10 Typical performance
17
Figure 11. Gain and efficiency vs output power
@ 28V and 140W load line
Freq = 123 MHz
Idq = 250mA
0
10
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
12
14
16
18
20
0 20 40 60 80 100 120 140 160
Efficiency (%)
Gain (dB)
Output Power (W)
Gain Efficiency
Test circuit SD2941-10
10/17 DocID11815 Rev 6
5 Test circuit
Figure 12. 30 MHz test circuit schematic (engineering test circuit)
Note: All dimension are in inches.
Table 9. 30 MHz test circuit component part list
Symbol Description
T2 1:4 transformer, 25 Ω semi-rigid coax.141 OD 6” Long
FB1 Toroid X 2, 0.5” OD.312” ID 850µ 2 turns
FB2, FB3 VK200
FB4 Shield bead, 1” OD 0.5” ID 850µ 3 Turns
L1 1/4 Wave Choke, 50W Semi-rigid coax.141 OD 12” Long
PCB 0.62” woven fiberglass, 1 oz. copper, 2 sides, εr = 2.55
R1, R3 470 Ω 1 W chip resistor
R2 360 Ω 1/2 W resistor
R4 20 KΩ 10 turn potentiometer
R5 560 Ω 1 W resistor
C1, C11 470 pF ATC chip cap
C2 43 pF ATC chip cap
C3, C8, C9 Arco 404, 12-65 pF
C4 Arco 423, 16-100 pF
C5 120 pF ATC chip cap
C6 0.01 μF ATC chip cap
C7 30 pF ATC chip cap
DocID11815 Rev 6 11/17
SD2941-10 Test circuit
17
Figure 13. 175 MHz test circuit photomaster
C10 91 pF ATC chip cap
C12, C15 1200 pF ATC chip cap
C13, C14,C16, C17 0.01 mF / 500 V chip cap
C18 10 mF 63 V electrolytic capacitor
Table 9. 30 MHz test circuit component part list (continued)
Symbol Description
6.4 inches
4 inches
Test circuit SD2941-10
12/17 DocID11815 Rev 6
Figure 14. 175 MHz test circuit
DocID11815 Rev 6 13/17
SD2941-10 Package information
17
6 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 15. M174 package dimensions
Package information SD2941-10
14/17 DocID11815 Rev 6
Table 10. M174 (.500 DIA 4/L N/HERM W/FLG)
DIM.
mm. inch
min. typ. max min. typ. max
A 5.56 5.584 0.219 0.230
B 3.18 0.125
C 6.22 6.48 0.245 0.255
D 18.28 18.54 0.720 0.730
E 3.18 0.125
F 24.64 24.89 0.970 0.980
G 12.57 12.83 0.495 0.505
H 0.08 0.18 0.003 0.007
I 2.11 3.00 0.083 0.118
J 3.81 4.45 0.150 0.175
K 7.11 0.280
L 25.53 26.67 1.005 1.050
M 3.05 3.30 0.120 0.130
DocID11815 Rev 6 15/17
SD2941-10 Marking, packing and shipping specifications
17
7 Marking, packing and shipping specifications
Figure 16. Marking layout
Table 11. Packing and shipping specifications
Order code Packaging Pcs per
tray
Dry pack
humidity VGS code Lot code
SD2941-10W Plastic tray 25 < 10% Not mixed Not mixed
Table 12. Marking specifications
Symbol Description
W Wafer process code
XV
GS sort
CZ Assembly plant
xxx Last 3 digit of diffusion lot
VY Diffusion plant
MAR Country of origin
CZ Test and finishing plant
y Assembly year
yy Assembly week
SD2941-10
Revision history SD2941-10
16/17 DocID11815 Rev 6
8 Revision history
Table 13. Document revision history
Date Revision Changes
15-Nov-2005 1 Initial release
06-Apr-2006 2 Complete version
13-Apr-2006 3 VDS(ON) updated
19-Oct-2011 4 Inserted Section 7: Marking, packing and shipping specifications.
Minor text changes in the title and description on the coverpage.
04-Aug-2014 5 Added performances at 28 V.
14-Aug-2015 6 Updated Table 2.: Absolute maximum rating.
Minor text changes.
DocID11815 Rev 6 17/17
SD2941-10
17
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