Features
High voltage
Electrically isolated base plate
3000 VRMS isolating voltage
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
This new IRK serie of MAGN-A-paks modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are
electrically isolated from the metal base, allowing com-
mon heatsinks and compact assemblies to be built. They
can be interconnected to form single phase or three
phase bridges or as AC-switches when modules are
connected in anti-parallel mode.
These modules are intended for general purpose appli-
cations such as battery chargers, welders and plating
equipment and where high voltage and high current are
required (motor drives, U.P.S., etc.).
Description
IT(AV) @ 85°C 170 230 250 A
IT(RMS) 377 510 555 A
ITSM @ 50Hz 5100 7500 8500 A
@ 60Hz 5350 7850 8900 A
I2t @ 50Hz 131 280 361 KA2s
@ 60Hz 119 256 330 KA2s
I2√t 1310 2800 3610 KA2√s
VDRM / VRRM Up to1600 Up to 2000 Up to1600 V
TJrange -40 to 130 oC
Parameters IRK.170.. IRK.230.. IRK.250.. Units
Major Ratings and Characteristics
SCR / SCR and SCR / DIODE
170A
230A
250A
MAGN-A-pak
Power Modules
IRK. SERIES
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Bulletin I27102 rev. C 05/02
www.irf.com
IRK.170, .230, .250 Series
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Bulletin I27102 rev. C 05/02
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Parameters IRK.170 IRK.230 IRK.250 Units Conditions
IT(AV) Maximum average on-state current 170 230 250 A 180o conduction, half sine wave
@ Case temperature 85 85 85 oC
IT(RMS) Maximum RMS on -state current 377 510 555 A as AC switch
ITSM Maximum peak, one-cycle on-state, 5100 7500 8500 A t = 10ms No voltage
non-repetitive surge current 5350 7850 8900 t = 8.3ms reapplied
4300 6300 7150 t = 10ms 100% VRRM
4500 6600 7500 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 131 280 361 KA2s t = 10ms No voltage initial TJ = TJ max
119 256 330 t = 8.3ms reapplied
92.5 198 255 t = 10ms 100% VRRM
84.4 181 233 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 1310 2800 3610 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1Low level value of threshold voltage 0.89 1.03 0.97 V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
VT(TO)2High level value of threshold voltage 1.12 1.07 1.00 (I > π x IT(AV)), TJ = TJ max.
rt1 Low level on-state slope resistance 1.34 0.77 0.60 mΩ(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
rt2 High level on-state slope resistance 0.96 0.73 0.57 (I > π x IT(AV)), TJ = TJ max.
ITM = π x IT(AV), TJ = TJ max., 180o conduction
Av. power = VT(TO) x IT(AV) + rf
x (IT(RMS))2
IHMaximum holding current 500 500 500 mA Anode supply=12V, initial IT=30A, TJ=25oC
ILMaximum latching current 1000 1000 1000 Anode supply=12V, resistive load=1Ω
gate pulse: 10V, 100µs, TJ = 25°C
Type number Voltage VRRMVDRM , maximum VRSM , maximum non-repetitive IRRM IDRM max
Code repetitive peak reverse and peak reverse voltage @ 130°C
off-state blocking voltage
VVm A
04 400 500 50
IRK.170- 08 800 900
IRK.250- 12 1200 1300
14 1400 1500
16 1600 1700
IRK.230- 08 800 900 50
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
tdTypical delay time 1.0 µsT
J = 25oC, Gate Current=1A dIg/dt=1A/µs
trTypical rise time 2.0 Vd = 0,67% VDRM
ITM = 300 A ; -dI/dt=15 A/µs; TJ = TJ max ;
Vr = 50 V; dV/dt = 20 V/µs ; Gate 0 V, 100 ohm
Voltage Ratings
ELECTRICAL SPECIFICATIONS
On-state Conduction
Switching
tqTypical turn-off time 50 - 150 µs
VTM Maximum on-state voltage drop 1.60 1.59 1.44 V
Parameters IRK.170 IRK.230 IRK.250 Units Conditions
IRK.170, .230, .250 Series
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Bulletin I27102 rev. C 05/02
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IRRM Max. peak reverse and off-state 50 mA TJ
=TJ max.
IDRM leakage current
VINS RMS isolation voltage 3000 V 50Hz, circuit to base, all termin. shorted, 25°C,1s
dv/dt Critical rate of rise of off-state voltage 1000 V/µsT
J = TJ max, exponential to 67% rated VDRM
TJJunction operating temperature -40 to 130 oC
Tstg Storage temperature range -40 to 150 oC
RthJC Maximum thermal resistance
junction to case
Mounting surface flat, smooth and greased
(per module)
T Mounting tourque ±10% A mounting compound is recommended and the
MAP to heatsink 4 to 6 Nm tourque should be rechecked after a period of
Busbar to MAP 4 to 6 Nm about 3 hours to allow for the spread of the
compound
wt Approximate weight 500 g
17.8 oz
Case style MAGN-A-pak
IPGM Maximum peak gate power 10.0 W tp ≤ 5ms, TJ = TJ max.
PG(AV) Maximum average gate power 2.0 W f = 50Hz, TJ = TJ max.
+IGM Maximum peak gate current 3.0 A tp ≤ 5ms, TJ = TJ max.
-VGT Max. peak negative gate voltage 5.0 V tp ≤ 5ms, TJ = TJ max.
VGT Maximum required DC gate 4.0 V TJ = - 40oC Anode supply = 12V, resistive
voltage to trigger 3.0 V TJ = 25oC load ; Ra = 1Ω
2.0 V TJ = TJ max.
IGT Maximum required DC gate 350 mA TJ = - 40oC Anode supply = 12V, resistive
current to trigger 200 mA TJ = 25oC load ; Ra = 1Ω
100 mA TJ = TJ max.
VGD Maximum gate voltage
that will not trigger
IGD Maximum gate current
that will not trigger
di/dt Max rate of rise of
turned-on current
Blocking
Triggering
Thermal and Mechanical Specifications
0.25 V @ TJ= TJ max., rated VDRM applied
10.0 mA @ TJ= TJ max., rated VDRM applied
500 A/µs@ T
J= TJ max., ITM = 400 A rated VDRM applied
0.17 0.125 0.125 K/W Per junction, DC operation
RthC-S Thermal resistance, case to heatsink 0.02 0.02 0.02 K/W
Parameters IRK.170 IRK.230 IRK.250 Units Conditions
Parameters IRK.170 IRK.230 IRK.250 Units Conditions
Parameters IRK.170 IRK.230 IRK.250 Units Conditions
IRK.170, .230, .250 Series
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Bulletin I27102 rev. C 05/02
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Thyristor Diode IT(AV) / IF(AV) @ TC
VDRM VRSM VRRM 170A 230A 250A
VRRM VRSM @ 85°C @ 85°C @ 85°C
1400 1500 2000 IRKH170-14D20 IRKH230-14D20 IRKH250-14D20
1400 1500 2000 IRKL170-14D20 IRKL230-14D20 IRKL250-14D20
1600 1700 2500 IRKH170-16D25 IRKH230-16D25 IRKH250-16D25
1600 1700 2500 IRKL170-16D25 IRKL230-16D25 IRKL250-16D25
1800 1900 2800 Not Available IRKH230-18D28 Not Available
1800 1900 2800 Not Available IRKL230-18D28 Not Available
2000 2100 3200 Not Available IRKH230-20D32 Not Available
2000 2100 3200 Not Available IRKL230-20D32 Not Available
M
3 x IRKL...
3 x IRKH...
3 x IRKT. . .
Current-Source Inverters (also known as Sequentially
Commutated Inverters) use Phase Control (as op-
posed to Fast) Thyristors and Diodes.
The advantages of Current Source Inverters lie in their
ease control, absence of large commutation induc-
tances and limited fault currents.
Their simple construction, illustrated by the circuit on
the left, is further enhanced by the use of MAGN-A-
paks which allow the power circuit of an Inverter to be
realised with 6 capacitors and 9 MAGN-A-paks all
mounted on just one heatsink.
The optimal design of Current Source Inverters re-
quires the use of Diodes with blocking voltages greater
than those of the thyristors .
This departure from conventional half-bridge modules
is catered for by MAGN-A-pak range with Thyristors up
to 2000V and Diodes up to 3200V.
Current Source Inverters
Current Source Inverter using 9 MAGN-A-paks
MAGN-A-paks Suitable for Current Source Inverters
Application Notes
For all other parameters and characteristics refer to standard IRKH... and IRKL... modules.
Sinusoidal conduction @ TJ max. Rectangular conduction @ TJ max.
Devices Units
180o120o90o60o30o180o120o90o60o30o
IRK.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 K/W
IRK.230- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033
IRK.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
IRK.170, .230, .250 Series
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Bulletin I27102 rev. C 05/02
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IRK T 250 - 14 D20
1- Module type
2- Circuit configuration (See Outline Table)
3- Current rating
4- Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
5- Current Source Inverters Types
Ordering Information Table
Device Code
1345
2
IRKL... IRKU... IRKV... IRKK... IRKN...
IRKH...
IRKT...
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
on request
- UL identification number for gate
and cathode wire: UL 1385
- UL identification number for package:
UL 94V0
Outline Table
NOTE: To order the Optional Hardware see Bulletin I27900
IRK.170, .230, .250 Series
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Bulletin I27102 rev. C 05/02
www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 05/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
