AON6414A
30V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 30A
R
DS(ON)
(at V
GS
=10V) < 8mΩ
R
DS(ON)
(at V
GS
=4.5V) < 10.5mΩ
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
V
GS
The AON6414A uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge.This device is
suitable for use as a high side switch in SMPS and
general purpose applications.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
30V
V
±20
Gate-Source Voltage
Drain-Source Voltage 30
G
D
S
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View Bottom View
V
GS
I
DM
I
AS
, I
AR
E
AS
, E
AR
V
DS
Spike V
SPIKE
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Power Dissipation
A
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
3.4 53
4
P
DSM
W
T
A
=70°C
31
1.5
T
A
=25°C
W
30
T
C
=25°C
G
T
C
=100°C
Power Dissipation
B
P
D
Continuous Drain
Current
31
13
T
C
=25°C
I
50 A
T
A
=25°C I
DSM
A
T
A
=70°C
140Pulsed Drain Current
C
Continuous Drain
Current I
D
30
A35
Parameter
V
±20
Gate-Source Voltage
Avalanche energy L=0.05mH
C
mJ
Avalanche Current
C
10
-55 to 150 °C
Thermal Characteristics Units
Maximum Junction-to-Ambient
A
°C/W
R
θJA
17
44 21
100ns 36 V
Typ Max
T
C
=25°C
2.3
12.5
T
C
=100°C
Junction and Storage Temperature Range
Rev.4.0 March 2013
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Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
Gate Threshold Voltage 1.5 1.95 2.5 V
I
D(ON)
140 A
6.6 8
T
J
=125°C 9.5 11.4
8.2 10.5 mΩ
g
FS
55 S
V
SD
0.72 1 V
I
S
35 A
C
iss
920 1150 1380 pF
C
oss
125 180 235 pF
C
rss
60 105 150 pF
R
g
0.55 1.1 1.65 Ω
Q
g
(10V) 16 20 24 nC
Q
g
(4.5V) 7.6 9.5 11.4 nC
Q
gs
2 2.7 3.2 nC
Q
gd
3 5 7 nC
t
D(on)
6.5 ns
t
r
2 ns
t
D(off)
17 ns
t
f
3.5 ns
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
µA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
mΩ
On state drain current
V
GS
=4.5V, I
D
=20A
Forward Transconductance
Diode Forward Voltage
V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
Reverse Transfer Capacitance V
GS
=0V, V
DS
=15V, f=1MHz
Turn-Off DelayTime
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
µ
SWITCHING PARAMETERS
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
V
GS
=10V, V
DS
=15V, I
D
=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
t
rr
78.7 10.5 ns
Q
rr
11 13.5 16 nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
I
F
=20A, dI/dt=500A/
µ
s
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. The maximum current rating is limited by silicon
Rev.4.0 March 2013
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
20
40
60
80
100
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
2
4
6
8
10
12
0 5 10 15 20 25 30
RDS(ON) (mΩ
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E+01
1.0E+02
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=4.5V
ID=20A
VGS=10V
ID=20A
25
25°C
125°C
V
DS
=5V
VGS=4.5V
VGS=10V
I
D
=20A
0
20
40
60
80
100
120
140
0 1 2 3 4 5
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=3V
3.5V
6V
7V
10V
4V
4.5V
5V
40
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25°C
125°C
0
5
10
15
20
2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
Rev.4.0 March 2013
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
2
4
6
8
10
0 5 10 15 20
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
1600
0 5 10 15 20 25 30
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
Normalized Transient
Coss
C
rss
VDS=15V
ID=20A
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TC=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
D=Ton/T
T
=T
+P
.Z
.R
40
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Zθ
θ
θ
θJC
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
T
on
T
P
D
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
RθJC=4°C/W
Rev.4.0 March 2013
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
10
Normalized Transient
D=Ton/T
T
=T
+P
.Z
.R
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
10
20
30
40
50
60
70
0.000001 0.00001 0.0001 0.001
IAR (A) Peak Avalanche Current
Time in avalanche, tA(s)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
5
10
15
20
25
30
35
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°
°°
°C)
Figure 13: Power De-rating (Note F)
0
10
20
30
40
0 25 50 75 100 125 150
Current rating ID(A)
TCASE (°
°°
°C)
Figure 14: Current De-rating (Note F)
TA=25°C
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
TA=25°C
TA=150°C
TA=100°C
TA=125°C
40
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=53°C/W
Rev.4.0 March 2013
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-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t tr
d(on)
t
on
t
d(off)
tf
t
off
Id
L
Vds
BV
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
DSS
2
E = 1/2 LI
AR
AR
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
Vgs
Id
Vgs
I
Ig
Vgs -
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
Rev.4.0 March 2013
www.aosmd.com Page 6 of 6
