MITSUBISHI IGBT MODULES CM50MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE CM50MD1-12H IC ..................................................................... 50A VCES ............................................................ 600V Insulated Type CIB Module 3 Inverter+3 Converter UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics, UPS OUTLINE DRAWING & CIRCUIT DIAGRAM GE 2.54 2.54 2.54 2.54 2.54 GE GU EU GV EV GW EW GU GV GW E GBGGGE N B U V W CIRCUIT DIAGRAM 29 0.25 2-4.5 MOUNTING HOLES R S T 29 0.25 GE N GB ; NOT CONNECTED P1 58 P1 P GV GW E 60 P 15 2.54 15 EU EV EW GU GU GV GW 17.2 10.16 10.16 10.16 2.54 8 Dimensions in mm R S T B 13 12.5 12.5 15 5 U V W 15 12.5 12.5 9 2-R5.5 105 0.25 115 4 2 0.6 t = 0.6 12 6.3 t = 0.6 LABEL 45 MAIN CIRCUIT TERMINAL CONTROL CIRCUIT TERMINAL Feb.1999 MITSUBISHI IGBT MODULES CM50MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3) (Tj = 25C) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation Condition G - E Short C - E Short TC = 25C PULSE TC = 25C PULSE Tf = 25C (Note. 2) (Note. 2) Rating 600 20 50 100 50 100 104 Unit Rating Unit 800 220 50 550 1.2103 V V A A A 2s Rating Unit -40 ~ +150 -40 ~ +125 2500 0.98 ~1.47 100 C C V N.m g V V A A A A W CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing Condition 3 rectifying circuit Tf = 106C 1 cycle at 60Hz, peak value Non-repetitive Value for one cycle of surge current COMMON RATING Symbol Tj Tstg Viso -- -- Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Condition AC 1 min. Mounting M4 screw Typical value Feb.1999 MITSUBISHI IGBT MODULES CM50MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol (Tj = 25C) VCE = VCES, VGE = 0V Min. -- Limits Typ. -- Max. 1 IC = 5mA, VCE = 10V 4.5 6 7.5 V VGE = VGES, VCE = 0V Tj = 25C IC = 50A, VGE = 15V Tj = 150C -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.2 -- -- -- -- 150 -- -- -- -- -- -- 0.14 -- -- 0.5 2.8 -- 5.0 3.8 1.0 -- 120 300 200 300 2.8 110 -- 1.2 1.9 A Min. -- -- -- Limits Typ. -- -- -- Max. 8 1.5 1.7 Parameter Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-emitter cutoff current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG Turn-on delay time td (on) Turn-on rise time tr td (off) Turn-off delay time tf Turn-off fall time VEC (Note. 1) Emitter-collector voltage trr (Note. 1) Reverse recovery time Qrr (Note. 1) Reverse recovery charge Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) ICES Test conditions VCE = 10V VGE = 0V VCC = 300V, IC = 50A, VGE = 15V VCC = 300V, IC = 50A VGE1 = VGE2 = 15V RG = 13 Resistive load IE = 50A, VGE = 0V IE = 50A, VGE = 0V die / dt = - 100A / s IGBT part, Per 1/6 module FWDi part, Per 1/6 module (Note. 4) Unit mA V nF nF nF nC ns ns ns ns V ns C C/W C/W CONVERTER PART Symbol Parameter Repetitive reverse current IRRM Forward voltage drop VFM Rth(j-f) (Note. 5) Thermal resistance Note 1. 2. 3. 4. 5. Condition VR = VRRM, Tj = 150C IF = 50A Per 1/6 module Unit mA V C/W IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Thermal resistance is specified under following conditions. * The conductive greese applied, between module and fin. * Al plate is used as fin. Feb.1999 MITSUBISHI IGBT MODULES CM50MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20 (V) 100 15 VCE = 10V 12 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) 100 TRANSFER CHARACTERISTICS (TYPICAL) Tj=25C 75 11 50 10 25 9 8 7 0 0 1 2 3 4 5 6 7 8 25 Tj = 25C Tj = 125C 0 2 4 6 8 10 12 14 16 18 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 VGE = 15V Tj = 25C Tj = 125C 4 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 50 0 9 10 5 3 2 1 0 0 25 50 75 8 7 6 IC = 100A 5 IC = 50A 4 3 2 IC = 20A 1 0 2 4 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISITICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 101 CAPACITANCE Cies, Coes, Cres (nF) Tj = 25C 2 102 7 5 3 2 101 7 5 3 Tj = 25C 9 0 100 3 EMITTER CURRENT IE (A) 75 0 0.8 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE VEC (V) VGE = 0V 7 5 3 Cies 2 Coes 100 7 5 3 2 10-1 Cres 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb.1999 MITSUBISHI IGBT MODULES CM50MD1-12H HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) tf 3 td(off) 2 102 td(on) 7 5 tr VCC = 300V VGE = 15V 2 RG = 13 Tj = 125C 1 10 0 10 2 3 5 7 101 3 2 2 5 Irr 3 2 102 trr 7 5 3 2 2 3 5 7 101 10-1 2 3 5 7 102 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 3 2 10-1 10-1 10-2 10-2 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) 7 5 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 7 5 3 2 100 3 EMITTER CURRENT IE (A) Rth(j - f) = 1.2C/ W 3 2 COLLECTOR CURRENT IC (A) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25C 100 5 101 0 10 5 7 102 3 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - f) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j - f) SWITCHING TIMES (ns) 7 5 REVERSE RECOVERY TIME trr (ns) 103 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 101 - di/dt = 100A / s 7 7 Tj = 25C REVERSE RECOVERY CURRENT lrr (A) MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25C 2 100 Rth(j - f) = 1.9C/ W 7 5 3 2 3 2 10-1 10-1 10-2 10-2 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) VGE - GATE CHARGE (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 50A 18 16 VCC = 200V 14 VCC = 300V 12 10 8 6 4 2 0 0 50 100 150 200 250 GATE CHARGE QG (nC) Feb.1999