PNP SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 5.5 GHz TYP
• HIGH SPEED SWITCHING CHARACTERISTICS
• NPN COMPLIMENT AVAILABLE: NE02133
• HIGH INSERTION POWER GAIN:
|S21E|2 = 10 dB at 1 GHz
DESCRIPTION
NE97833
California Eastern Laboratories
NEC’s NE97833 PNP silicon transistor is designed for
ultrahigh speed current mode switching applications and
microwave amplifiers up to 3.5 GHz. The NE97833 offers
excellent performance and reliability at low cost.
33 (SOT 23 STYLE)
PART NUMBER NE97833
EIAJ1 REGISTERED NUMBER 2SA1978
PACKAGE OUTLINE 33
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
fTGain Bandwidth Product at VCE = -10 V, IC = -15 mA GHz 4.0 5.5
NF Noise Figure at VCE = -10 V, IC = -3 mA dB 2.0 3.0
|S21E|2Insertion Power Gain at VCE = -10 V, IC = -15 mA, f = 1 GHz dB 8.0 10.0
hFE Forward Current Gain Ratio at VCE = -10 V, IC = -15 mA 20 40 100
ICBO Collector Cutoff Current at VCB = -10 V, IE = 0 µA -0.1
IEBO Emitter Cutoff Current at VBE = -2 V, IC = 0 µA -0.1
CRE2Feedback Capacitance at VCB = -10 V, IE = 0 mA, f = 1 MHz pF 0.5 1.0
PTTotal Power Dissipation mW 200
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Notes:
1. Electronic Industrial Association of Japan.
2. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
NE97833
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS PARAMETERS UNITS RATINGS
VCBO Collector to Base Voltage V -20
VCEO Collector to Emitter Voltage V -12
VEBO Emitter to Base Voltage V -3
ICCollector Current mA -50
TJJunction Temperature °C 150
TSTG Storage Temperature °C -65 to +200
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
Total Power Dissipation, P
T
(mW)
Insertion Power Gain, |S
21E
|
2
Gain Bandwidth Product, f
T
(GHz)
Insertion Power Gain, |S
21E
|
2
Collector Current, IC (mA)
Collector Current, IC (mA)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DC POWER DERATING CURVES INSERTION GAIN vs. FREQUENCY
Ambient Temperature, TA (°C) Frequency, f (MHz)
GAIN BANDWIDTH
vs. COLLECTOR CURRENT
INSERTION GAIN
vs. COLLECTOR CURRENT
DC CURRENT GAINS VS.
COLLECTOR CURRENT
DC Current Gain, H
FE
Collector Current, IC (mA)
100
10
1
-0.1 -1.0 -10 -100 -1000
VCE = -3 V
VCE = -2 V
VCE = -1 V
NE97833
FREE AIR
400
300
200
100
0
050
100 150 200
30
20
10
0
-10
100 200 300 500 1000 3000
VCE = -10 V
IC = -15 mA
VCE = 1 V
IC = 5 mA
10
12
14
8
6
4
2
0
110 100
f = 1 GHz
V
CE
= -3 V
V
CE
= -1 V
V
CE
= -10 V
V
CE
= -3 V
V
CE
= -1 V
V
CE
= -10 V
f = 1 GHz
6
8
10
12
14
0
2
4
110 100
VIN = 1 v, VBB = -0.5 V, RC1 = RC2
RSRCRL1 RL2 REVEE VCC
(Ω)(Ω)(Ω)(Ω)(Ω) (V) (V)
160 1 K 200 250 2.7 K 27 26.3
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE97833
DC CURRENT GAIN VS.
COLLECTOR CURRENT
NOISE FIGURE VS.
COLLECTOR CURRENT
DC Current Gain, H
FE
Collector Current, IC (mA)
Noise Figure, NF
Collector Current, IC (mA)
VIN RS
VOUT
RL1
RC1 RC2
RL2
VBB (-)
50 Ω
VCC (-)
VEE (+)
RE
Sampling
Oscilloscope VOUT
VIN 20 ns
tOFF (delay)
tON (delay) trtf
tON (delay) Turn-on Delay Time ns 1.10
tr Rise Time ns 0.77
tOFF (delay) Turn-off Delay Time ns 0.40
tfFall Time ns 0.79
SWITCHING CHARACTERISTICS
SWITCHING TIME MEASUREMENT CIRCUIT
VIN = 1 V
UNITS PARAMETERS UNITS TYP
-0.1 -1.0 -10 -100 -1000
1.0
10
100
VCE = -10 V VCE = 10 V
f = 1 GHz
6
4
2
0
110
100
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
NE97833
VCE = -5 V, IC = -10 mA
FREQUENCY S11 S21 S12 S22 K MAG1
Note:
1. Gain Calculation:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB)
0.50 0.274 -149.2 6.102 96.9 0.063 68.1 0.493 -30.9 0.97 19.9
0.80 0.273 -177.0 4.037 82.0 0.093 70.1 0.432 -32.2 1.07 14.7
1.00 0.278 169.8 3.303 74.5 0.114 70.3 0.412 -34.5 1.09 12.8
1.50 0.308 144.6 2.311 58.7 0.170 68.1 0.381 -44.8 1.08 9.6
2.00 0.352 125.0 1.808 45.3 0.229 63.9 0.362 -59.4 1.03 7.8
2.50 0.402 109.1 1.496 33.5 0.288 58.3 0.359 -75.9 0.99 7.2
3.00 0.449 96.4 1.281 23.6 0.345 52.4 0.364 -91.0 0.95 5.7
4.00 0.506 79.7 1.023 9.1 0.458 40.7 0.350 -113.5 0.91 3.5
5.00 0.527 71.1 0.908 -1.8 0.574 27.4 0.246 -138.8 0.92 2.0
VCE = -8 V, IC = -10 mA
0.50 0.252 -140.2 6.426 98.5 0.060 68.7 0.523 -29.0 0.95 20.3
0.80 0.240 -171.6 4.270 83.5 0.089 70.6 0.463 -30.1 1.05 15.4
1.00 0.243 173.7 3.496 76.0 0.109 70.9 0.443 -32.3 1.08 13.4
1.50 0.272 145.9 2.445 60.5 0.162 60.5 0.515 -43.9 1.11 9.8
2.00 0.316 125.3 1.911 47.2 0.219 65.0 0.393 -55.2 1.02 8.4
2.50 0.369 109.0 1.582 35.6 0.276 59.8 0.388 -70.6 0.98 7.6
3.00 0.418 96.4 1.353 25.5 0.333 54.2 0.392 -85.0 0.94 6.1
4.00 0.479 79.9 1.076 10.7 0.445 42.9 0.379 -106.3 0.90 3.8
5.00 0.503 71.7 0.950 -0.4 0.563 30.2 0.278 -127.3 0.90 2.3
VCE = -10 V, IC = -15 mA
0.50 0.555 -80.8 4.097 116.8 0.076 55.1 0.697 -28.4 0.65 17.3
0.80 0.399 -121.8 3.325 94.8 0.094 53.5 0.600 -32.6 0.89 15.5
1.00 0.348 -143.5 2.864 84.2 0.106 55.4 0.564 -35.2 1.00 14.3
1.50 0.314 173.5 2.107 64.5 0.140 69.0 0.411 -39.4 1.07 10.2
2.00 0.342 142.8 1.669 49.0 0.186 62.8 0.494 -56.1 1.08 7.8
2.50 0.393 120.2 1.382 36.0 0.241 61.5 0.490 -70.2 1.00 7.4
3.00 0.446 103.4 1.179 25.6 0.302 57.9 0.496 -83.7 0.93 5.9
4.00 0.515 81.7 0.934 11.9 0.433 47.8 0.484 -105.8 0.87 3.3
5.00 0.529 69.6 0.844 3.0 0.575 34.3 0.382 -128.7 0.90 1.7
VCE = -10 V, IC = -3 mA
0.50 0.214 -153.1 6.846 96.2 0.058 73.2 0.506 -27.0 0.99 20.7
0.80 0.215 179.7 4.489 82.4 0.087 74.0 0.456 -27.9 1.06 15.6
1.00 0.221 166.8 3.664 75.4 0.108 73.7 0.439 -30.1 1.07 13.7
1.50 0.254 141.5 2.554 60.6 0.163 70.6 0.441 -41.8 1.05 10.6
2.00 0.300 122.3 1.992 47.7 0.220 66.0 0.393 -52.7 1.01 8.9
2.50 0.352 107.1 1.648 36.2 0.276 60.4 0.387 -68.0 0.97 7.8
3.00 0.402 95.0 1.410 26.3 0.331 54.6 0.389 -82.1 0.94 6.3
4.00 0.463 79.5 1.121 11.3 0.440 43.4 0.377 -102.6 0.89 4.1
5.00 0.489 72.1 0.984 -0.2 0.555 31.0 0.277 -121.3 0.89 2.5
MAG = |S
21
|
|S
12
|K - 1
).
2
(
K ± ∆ = S
11
S
22
- S
21
S
12
When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S
21
|
|S
12
|, K = 1 + | ∆ | - |S
11
| - |S
22
|
222
2 |S
12
S
21
|
,
NE97833
VCE = -8 V, IC = -10 mA
0.2 0.4 0.8 1 1.5 2 3 4 5 10 20 50
-50
20
10
5
4
3
2
1.5
1
0.8
0.6
0.4
0.2
-0.2
-0.4
-0.6
-0.8 -1
-1.5
-2
-3
-4
-5
-10
-20
S
11
S
22
0.6
270˚
180˚
225˚ 315˚
135˚
0˚
90˚
45˚
S
12
S
21
2.5
5.0
0.1 0.2 0.3 0.4 0.5
3-174
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 33
(SOT-23)
OUTLINE 33
RECOMMENDED P.C.B. LAYOUT
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
NE97833
PART NUMBER QUANTITY PACKAGING
NE97833-T1B-A 3000 Tape & Reel
ORDERING INFORMATION
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -7/98
DATA SUBJECT TO CHANGE WITHOUT NOTICE
0.16+0.10
-0.06
0.65+0.10
-0.15
0.4+0.10
-0.05
1
2
3
0 to 0.1
2.8
1.9
1.5
(ALL LEADS)
0.8
1.1 to 1.4
2.9 ± 0.2 0.95
+0.2
-0.3
+0.2
-0.1
2.4
3
2
1.9
0.95
1.0
1
0.8
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
3-175
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile:
(
408
)
988-0279
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A -AZ
Lead (Pb) < 1000 PPM Not Detected (*)
Mercury < 1000 PPM Not Detected
Cadmium < 100 PPM Not Detected
Hexavalent Chromium < 1000 PPM Not Detected
PBB < 1000 PPM Not Detected
PBDE < 1000 PPM Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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