PD - 96988A IRF2903Z IRF2903ZS IRF2903ZL AUTOMOTIVE MOSFET HEXFET(R) Power MOSFET Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 30V RDS(on) = 2.4m G Description ID = 75A S Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D D G D S G D S Drain Source Max. 260 ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 180 ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) 75 c Linear Derating Factor Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy d EAS (Tested ) Single Pulse Avalanche Energy Tested Value IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range c h g Mounting Torque, 6-32 or M3 screw Thermal Resistance Junction-to-Case k 290 W 2.0 W/C 20 V 290 mJ 820 See Fig.12a, 12b, 15, 16 A C 300 (1.6mm from case ) y i Case-to-Sink, Flat, Greased Surface Junction-to-Ambient RJA Junction-to-Ambient (PCB Mount, steady state) y 10 lbf in (1.1N m) i RCS RJA www.irf.com A mJ Parameter ik Units -55 to + 175 Soldering Temperature, for 10 seconds RJC S 1020 PD @TC = 25C Power Dissipation VGS G D TO-262 IRF2903ZL G Parameter Pulsed Drain Current S Gate ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) IDM D D2Pak IRF2903ZS TO-220AB IRF2903Z Absolute Maximum Ratings D jk Typ. Max. --- 0.51 0.50 --- --- 62 --- 40 Units C/W 1 8/26/05 IRF2903Z/S/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current IGSS Min. Typ. Max. Units Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance 30 --- --- 2.0 120 --- --- --- --- --- --- --- --- --- --- --- --- --- 0.021 1.9 --- --- --- --- --- --- 160 51 58 24 100 48 37 4.5 --- --- 2.4 4.0 --- 20 250 200 -200 240 --- --- --- --- --- --- --- LS Internal Source Inductance --- 7.5 --- Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 6320 1980 1100 5930 2010 3050 --- --- --- --- --- --- V V/C m V S A nA nC ns nH pF Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 75A VDS = VGS, ID = 150A VDS = 10V, ID = 75A VDS = 30V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID = 75A VDS = 24V VGS = 10V VDD = 15V ID = 75A RG = 3.2 VGS = 10V e e e Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 24V, = 1.0MHz VGS = 0V, VDS = 0V to 24V f Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton 2 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time c Min. Typ. Max. Units --- --- 75 --- --- 1020 --- --- --- --- 34 29 1.3 51 44 A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V TJ = 25C, IF = 75A, VDD = 15V di/dt = 100A/s e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF2903Z/S/L 1000 1000 ID, Drain-to-Source Current (A) TOP 100 BOTTOM 10 4.5V TOP ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V BOTTOM 100 4.5V 60s PULSE WIDTH Tj = 25C 60s PULSE WIDTH Tj = 175C 1 10 0.1 1 10 100 1000 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.0 1000 240 100.0 Gfs, Forward Transconductance (S) ID, Drain-to-Source Current() VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TJ = 175C 10.0 TJ = 25C 1.0 VDS = 25V 60s PULSE WIDTH TJ = 25C 200 TJ = 175C 160 120 80 40 VDS = 10V 380s PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10.0 0 0 20 40 60 80 100 120 140 160 180 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current 3 IRF2903Z/S/L 12000 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd VGS, Gate-to-Source Voltage (V) 10000 ID= 75A C, Capacitance (pF) Coss = Cds + Cgd 8000 Ciss 6000 4000 Coss 2000 Crss VDS= 15V 16 12 8 4 0 0 1 10 0 100 40 1000.0 10000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 120 160 200 240 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage TJ = 175C 100.0 80 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 10.0 TJ = 25C 1.0 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 1msec 100sec 100 LIMITED BY PACKAGE 10 1 VGS = 0V 10msec DC Tc = 25C Tj = 175C Single Pulse 0.1 0.1 0.0 0.4 0.8 1.2 1.6 2.0 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 24V 2.4 0.1 1.0 10.0 100.0 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF2903Z/S/L 300 2.0 250 200 VGS = 10V 1.5 (Normalized) ID , Drain Current (A) ID = 75A RDS(on) , Drain-to-Source On Resistance LIMITED BY PACKAGE 150 100 50 0 25 50 75 100 125 150 1.0 0.5 175 -60 -40 -20 TC , Case Temperature (C) 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 2 1 2 Ci= i/Ri Ci i/Ri R3 R3 3 C 3 Ri (C/W) i (sec) 0.08133 0.000044 0.2408 0.000971 0.18658 0.008723 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF2903Z/S/L D.U.T RG VGS 20V DRIVER L VDS + V - DD IAS A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) 1200 15V ID 26A 42A BOTTOM 75A TOP 1000 800 600 400 200 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 4.5 ID = 1.0A VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS VGS(th) Gate threshold Voltage (V) 10 V ID = 1.0mA 4.0 ID = 250A ID = 150A 3.5 3.0 2.5 2.0 1.5 1.0 -75 VGS -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 Fig 14. Threshold Voltage Vs. Temperature www.irf.com IRF2903Z/S/L 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 100 0.05 0.10 10 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 300 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 250 200 150 100 50 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (C) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 IRF2903Z/S/L D.U.T Driver Gate Drive + * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - - D= Period P.W. + VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs VDS VGS RG RD D.U.T. + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com IRF2903Z/S/L TO-220AB Package Outline TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 IN T HE AS S EMBLY LINE "C" Note: "P" in as sembly line position indicates "Lead - Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C TO-220AB package is not recommended for Surface Mount Application. www.irf.com 9 IRF2903Z/S/L D2Pak Package Outline (Dimensions are shown in millimeters (inches)) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" Note: "P" in assembly line position indicates "Lead-Free" OR INT ERNAT IONAL RECT IFIER LOGO F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L AS S EMBLY LOT CODE INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE 10 PART NUMBER PART NUMBER F530S DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS S EMBLY S IT E CODE www.irf.com IRF2903Z/S/L TO-262 Package Outline (Dimensions are shown in millimeters (inches)) IGBT 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE AS SEMBLY LINE "C" Note: "P" in ass embly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE www.irf.com PART NUMBER DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEEK 19 A = AS SEMBLY SIT E CODE 11 IRF2903Z/S/L D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. Limited by TJmax, starting TJ = 25C, L = 0.10mH This value determined from sample failure population. 100% RG = 25, IAS = 75A, VGS =10V. Part not tested to this value in production. recommended for use above this value. This is only applied to TO-220AB pakcage. Pulse width 1.0ms; duty cycle 2%. This is applied to D2Pak, when mounted on 1" square PCB (FR Coss eff. is a fixed capacitance that gives the 4 or G-10 Material). For recommended footprint and soldering same charging time as Coss while VDS is rising techniques refer to application note #AN-994. from 0 to 80% VDSS . R is measured at TJ approximately 90C Repetitive rating; pulse width limited by Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101]market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/05 12 www.irf.com