RN739F / RN739D
Diodes
PIN diode
RN739F / RN739D
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!Applications
VHF / UHF band variable attenuators and AGC
!
!!
!Features
1) Multiple diodes in one small surface mount package.
(UMD3, SMD3)
2) Low high-frequency forward resistance (rF) / low
capacitance (CT).
3) High reliability.
!
!!
!Construction
Silicon diffusion junction
!
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!Circuit
!
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!External dimensions (Units : mm)
2.1±0.1
1.25±0.1
0.1Min.
0~0.1
0.15±0.05
0.3±0.1
2.0±0.2
1.3±0.1
0.650.65
0.9±0.1
0.3 0.6
ROHM : UMD3
EIAJ : SC-70
JEDEC : SOT-323
(All pins have the same dimensions)
5 F
2.8±0.2
1.6
0.3~0.6
0.15
0.4
0~0.1
1.1
0.8±0.1
2.9±0.2
1.9±0.2
0.95 0.95
+0.2
−0.1
+0.2
−0.1
+0.1
−0.06
+0.1
−0.05
ROHM : SMD3
EIAJ : SC-59
JEDEC : SOT-346
(All pins have the same dimensions)
D 5 F
RN739F
RN739D
!
!!
!Absolute maximum ratings (Ta = 25°C)
Parameter Symbol Limits Unit
DC reverse voltage V
R
50 V
DC forward current I
F
50 mA
Power dissipation 100 mW
Junction temperature 125 °C
Storage temperature Tstg °C
Tj
−55~+125
Pd
!
!!
!Electrical characteristics (Ta = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage V
F
−−1.0 V I
F
=50mA
Reverse current I
R
−−100 nA V
R
=50V
Capacitance between terminals −−0.4 pF
Forward operating resistance r
F
−−7ΩI
F
=10mA, f=100MHz
V
R
=35V, f=1MHz
C
T
RN739F / RN739D
Diodes
!
!!
!Electrical characteristic curves (Ta = 25°C)
1m
10m
100m
0 0.5 1.0
75°C
125°C
25°C
−25°C
FORWARD CURRENT : IF (A)
FORWARD VOLTAGE : VF (V)
Fig.1 Forward characteristics
1n
0 10 20 30 40 50 60 70
1p
10p
100p
10n
100n
125°C
75°C
25°C
10µ
1µ
REVERSE CURRENT : IR (A)
REVERSE VOLTAGE : VR (V)
Fig.2 Reverse characteristics
10 20 30
0.1
0.2
0.3
0.4
0.5
0.7
1.0
REVERSE VOLTAGE : V
R
(V)
f=1MHz
f=10MHz
CAPACITANCE BETWEEN TERMINAL : CT (pF)
Fig.3 Capacitance between
terminals characteristics 1
0.1
0.2
0.3
0.4
0.5
0.7
1.0
100 200 300 400 500 600
HIGH FREQUENCY : f (MHz)
V
R
=0V
V
R
=3V
CAPACITANCE BETWEEN TERMINAL : C
T
(pF)
Fig.4 Capacitance between
terminals characteristics 2
0.1
1.0
10
100
1.0 10
f=100MHz
DYNAMIC FORWARD RESISTANCE : r
F
(Ω)
FORWARD CURRENT : I
F
(mA)
Fig.5 High frequency characteristics
f=10MHz
f=1MHz
20
10
10 100 1000
DYNAMIC FORWARD RESISTANCE : r
F
(Ω)
FORWARD CURRENT : f (MHz)
I
F
=2mA
Fig.6 Forward operating
resistance characteristics
0
0
20
40
60
80
100
25 50 75 100 125
Io CURRENT (%)
AMBIENT TEMPERATURE : Ta (°C)
Fig.7 Derating curve
(mounting on glass epoxy PCBs)
