General Description
The MAX19995 dual-channel downconverter provides
9dB of conversion gain, +24.8dBm input IP3,
+13.3dBm 1dB input compression point, and a noise
figure as low as 9dB for 1700MHz to 2200MHz diversity
receiver applications. With an optimized LO frequency
range of 1400MHz to 2000MHz, this mixer is ideal for
low-side LO injection architectures. High-side LO injec-
tion is supported by the MAX19995A, which is pin-pin
and functionally compatible with the MAX19995.
In addition to offering excellent linearity and noise per-
formance, the MAX19995 also yields a high level of
component integration. This device includes two dou-
ble-balanced passive mixer cores, two LO buffers, a
dual-input LO selectable switch, and a pair of differen-
tial IF output amplifiers. Integrated on-chip baluns allow
for single-ended RF and LO inputs.
The MAX19995 requires a nominal LO drive of 0dBm
and a typical supply current of 297mA at VCC = 5.0V or
212mA at VCC = 3.3V.
The MAX19995/MAX19995A are pin compatible with
the MAX19985/MAX19985A series of 700MHz to
1000MHz mixers and pin similar with the MAX19997A/
MAX19999 series of 1800MHz to 4000MHz mixers,
making this entire family of downconverters ideal for
applications where a common PCB layout is used
across multiple frequency bands.
The MAX19995 is available in a 6mm x 6mm, 36-pin
thin QFN package with an exposed pad. Electrical per-
formance is guaranteed over the extended temperature
range, from TC= -40°C to +85°C.
Applications
UMTS/WCDMA/LTE Base Stations
cdma2000®Base Stations
DCS1800 and EDGE Base Stations
PCS1900 and EDGE Base Stations
PHS/PAS Base Stations
Fixed Broadband Wireless Access
Wireless Local Loop
Private Mobile Radios
Military Systems
Features
♦1700MHz to 2200MHz RF Frequency Range
♦1400MHz to 2000MHz LO Frequency Range
♦1750MHz to 2700MHz LO Frequency Range
(MAX19995A)
♦50MHz to 500MHz IF Frequency Range
♦9dB Typical Conversion Gain
♦9dB Typical Noise Figure
♦+24.8dBm Typical Input IP3
♦+13.3dBm Typical Input 1dB Compression Point
♦79dBc Typical 2RF-2LO Spurious Rejection at
PRF = -10dBm
♦Dual Channels Ideal for Diversity Receiver
Applications
♦49dB Typical Channel-to-Channel Isolation
♦Low -3dBm to +3dBm LO Drive
♦Integrated LO Buffer
♦Internal RF and LO Baluns for Single-Ended
Inputs
♦Built-In SPDT LO Switch with 56dB LO-to-LO
Isolation and 50ns Switching Time
♦Pin Compatible with the MAX19985/MAX19985A/
MAX19995A Series of 700MHz to 2200MHz Mixers
♦Pin Similar to the MAX19997A/MAX19999 Series
of 1800MHz to 4000MHz Mixers
♦Single +5.0V or +3.3V Supply
♦External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/Reduced-
Performance Mode
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
________________________________________________________________
Maxim Integrated Products
1
Ordering Information
19-4253; Rev 0; 12/08
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
cdma2000 is a registered trademark of Telecommunications Industry Association.
PART
TEMP RANGE
PIN-PACKAGE
MAX19995ETX+
-40°C to +85°C
36 Thin QFN-EP*
MAX19995ETX+T -40°C to +85°C
36 Thin QFN-EP*
Pin Configuration and Typical Application Circuit appear at
end of data sheet.
+
Denotes a lead(Pb)-free/RoHS-compliant package.
*
EP = Exposed pad.
T = Tape and reel.
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
optimized for the DCS/PCS band, VCC = +4.75V to +5.25V, TC= -40°C to +85°C. R1 = R4 = 806Ω, R2 =
R5 = 2.32kΩ. Typical values are at VCC = +5.0V, TC= +25°C, unless otherwise noted. All parameters are production tested.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: Based on junction temperature TJ= TC+ (θJC x VCC x ICC). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the
Applications Information
section for details. The junction
temperature must not exceed +150°C.
Note 2: Junction temperature TJ= TA+ (θJA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Note 4: TCis the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB.
VCC to GND...........................................................-0.3V to +5.5V
LO1, LO2 to GND ...............................................................±0.3V
Any Other Pins to GND...............................-0.3V to (VCC + 0.3V)
RFMAIN, RFDIV, and LO_ Input Power ..........................+15dBm
RFMAIN, RFDIV Current (RF is DC shorted to GND
through a balun)...............................................................50mA
Continuous Power Dissipation (Note 1) ...............................8.7W
θJA (Notes 2, 3)..............................................................+38°C/W
θJC (Notes 1, 3)...............................................................7.4°C/W
Operating Case Temperature Range
(Note 4).............................................................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage VCC 4.75 5 5.25 V
Supply Current ICC Total supply current, VCC = +5.0V 297 370 mA
LOSEL Input High Voltage VIH 2V
LOSEL Input Low Voltage VIL 0.8 V
LOSEL Input Current IIH and IIL -10 +10 µA
+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
, VCC = +3.0V to +3.6V, TC= -40°C to +85°C, R1 = R4 = 909Ω, R2 = R5 = 2.49kΩ. Typical values are at
VCC = +3.3V, TC= +25°C, unless otherwise noted. All parameters are guaranteed by design and not production tested.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage VCC 3.0 3.3 3.6 V
Supply Current ICC Total supply current, VCC = +3.3V 212 mA
LOSEL Input High Voltage VIH 2V
LOSEL Input Low Voltage VIL 0.8 V
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
_______________________________________________________________________________________ 3
RECOMMENDED AC OPERATING CONDITIONS
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC = +4.75V to +5.25V, RF and
LO ports are driven from 50Ωsources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 1700MHz to 2000MHz, fLO = 1510MHz to
1810MHz, fIF = 190MHz, fRF > fLO, TC= -40°C to +85°C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm,
fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC= +25°C, unless otherwise noted.) (Note 6)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
RF Frequency fRF (Note 5) 1700 2200 MHz
LO Frequency fLO (Note 5) 1400 2000 MHz
Using Mini-Circuits TC4-1W-17 4:1
transformer as defined in the typical
application circuit, IF matching components
affect the IF frequency range (Note 5)
100 500 MHz
IF Frequency fIF
Using alternative Mini-Circuits TC4-1W-7A
4:1 transformer, IF matching components
affect the IF frequency range (Note 5)
50 250 MHz
LO Dri ve Level PLO -3 +3 dBm
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
7911
TC = +25°C 7.8 9 10.2
Conversion Gain GCTypical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), fLO = 1760MHz, fRF = 1950MHz
8.9
dB
Conversion Gain Flatness
Flatness over any one of three frequency
bands:
fRF = 1710MHz to 1785MHz
fRF = 1850MHz to 1910MHz
fRF = 1920MHz to 1980MHz
±0.1 dB
Gain Variation Over Temperature TCCG
fRF = 1700MHz to 2000MHz,
fLO = 1510MHz to 1810MHz,
fIF = 190MHz, TC = -40°C to +85°C
-0.009 dB/°C
fRF = 1700MHz for min value 9.5 12.5
Input Compression Point
(Note 7) IP1dB
Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), fLO = 1760MHz, fIF = 190MHz,
fRF = 1950MHz
13.3 dBm
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
4 _______________________________________________________________________________________
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(
Typical Application Circuit
optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC = +4.75V to +5.25V, RF and
LO ports are driven from 50Ωsources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 1700MHz to 2000MHz, fLO = 1510MHz to
1810MHz, fIF = 190MHz, fRF > fLO, TC= -40°C to +85°C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm,
fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC= +25°C, unless otherwise noted.) (Note 6)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone,
fRF = 2000MHz for min value 20.5 23.7
fIF = 190MHz, fLO = 1810MHz, fRF =
2000MHz for min value, fRF1 - fRF2 = 1MHz,
PRF = -5dBm per tone, TC = +25°C to
+85°C
21.5 23.7
Input Intercept Point IIP3
Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), fLO = 1760MHz, fIF = 190MHz,
fRF = 1950MHz, fRF1 - fRF2 = 1MHz,
PRF = -5dBm per tone
24.8
dBm
Input Intercept Variation Over
Temperature TCIIP3 fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone,
TC = -40°C to +85°C 0.0035 dBm/°C
Single sideband, no blockers present
(Note 8) 911
fLO = 1610MHz, fIF = 190MHz,
fRF = 1800MHz, TC = +25°C, PLO = 0dBm,
single sideband, no blockers present
(Note 8)
9 9.6
Noise Figure NFSSB
Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω , R2 = R5 =
1.5kΩ), fIF = 190MHz, fLO = 1760MHz,
fRF = 1950MHz, single sideband, no
blockers present
9.3
dB
Noise Figure Temperature
Coefficient TCNF Single sideband, no blockers present,
TC = -40°C to +85°C 0.016 dB/°C
Noise Figure with Blocker NFB
fBLOCKER = 1900MHz, PBLOCKER =
+8dBm, fRF = 1800MHz, fLO = 1610MHz,
PLO = 0dBm, VCC = +5.0V, TC = +25°C
(Notes 8, 9)
19 20.5 dB
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
_______________________________________________________________________________________ 5
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(
Typical Application Circuit
optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC = +4.75V to +5.25V, RF and
LO ports are driven from 50Ωsources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 1700MHz to 2000MHz, fLO = 1510MHz to
1810MHz, fIF = 190MHz, fRF > fLO, TC= -40°C to +85°C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm,
fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC= +25°C, unless otherwise noted.) (Note 6)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
fRF = 1800MHz, fLO = 1610MHz,
PRF = -10dBm (Note 8) 54 79
fRF = 1800MHz, fLO = 1610MHz,
PRF = -5dBm (Note 8) 49 74
fRF = 1800MHz, fLO = 1610MHz,
PLO = 0dBm, PRF = -10dBm,
VCC = +5.0V, TC = +25°C (Note 8)
56 79
fRF = 1800MHz, fLO = 1610MHz,
PLO = 0dBm, PRF = -5dBm, VCC = +5.0V,
TC = +25°C (Note 8)
51 74
Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), fIF = 190MHz, fLO = 1760MHz,
fRF = 1950MHz, PRF = -10dBm
79
2RF-2LO Spur Rejection 2 x 2
Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), fIF = 190MHz, fLO = 1760MHz,
fRF = 1950MHz, PRF = -5dBm
74
dBc
fRF = 1800MHz, fLO = 1610MHz,
PRF = -10dBm (Note 8) 77 91
fRF = 1800MHz, fLO = 1610MHz,
PRF = -5dBm (Note 8) 67 81
fRF = 1800MHz, fLO = 1610MHz,
PLO = 0dBm, PRF = -10dBm,
VCC = +5.0V, TC = +25oC (Note 8)
79 91
fRF = 1800MHz, fLO = 1600MHz,
PLO = 0dBm, PRF = -5dBm, VCC = +5.0V,
TC = +25°C (Note 8)
69 81
Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), fIF = 190MHz, fLO = 1760MHz,
fRF = 1950MHz, PRF = -10dBm
86
3RF-3LO Spur Rejection 3 x 3
Typical Application Circuit optimized for
UMTS band (R1 = R4 = 681Ω, R2 = R5 =
1.5kΩ), fIF = 190MHz, fLO = 1760MHz,
fRF = 1950MHz, PRF = -5dBm
76
dBc
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
6 _______________________________________________________________________________________
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(
Typical Application Circuit
optimized for the DCS/PCS band, R1 = R4 = 806Ω, R2 = R5 = 2.32kΩ, VCC = +4.75V to +5.25V, RF and
LO ports are driven from 50Ωsources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 1700MHz to 2000MHz, fLO = 1510MHz to
1810MHz, fIF = 190MHz, fRF > fLO, TC= -40°C to +85°C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm,
fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC= +25°C, unless otherwise noted.) (Note 6)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
RF Input Return Loss LO and IF terminated into matched
impedance, LO on 21 dB
LO port selected, RF and IF terminated into
matched impedance 20
LO Input Return Loss
LO port unselected, RF and IF terminated
into matched impedance 19
dB
IF Output Impedance ZIF Nominal differential impedance of the IC’s
IF outputs 200 Ω
IF Return Loss
RF terminated into 50Ω, LO driven by 50Ω
source, IF transformed to 50Ω using
external components shown in Typical
Application Circuit
12.5 dB
RF-to-IF Isolation fRF = 1700MHz for min value 30 39 dB
LO Leakage at RF Port (Notes 8, 10) -31 -24.7 dBm
2LO Leakage at RF Port (Note 8) -20 -16 dBm
LO Leakage at IF Port (Note 8) -40 -27 dBm
RFMAIN converted power measured at
IFD_, relative to IFM_, all unused ports
terminated to 50Ω
40 49
Channel Isolation
RFDIV converted power measured at IFM_,
relative to IFD_, all unused ports terminated
to 50Ω
40 49
dB
LO-to-LO Isolation PLO1 = +3dBm, PLO2 = +3dBm,
fLO1 = 1610MHz, fLO2 = 1611MHz 40 56 dB
LO Switching Time 50% of LOSEL to IF settled within 2
degrees 50 ns
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
. Typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 1800MHz, fLO = 1610MHz,
fIF = 190MHz, TC= +25°C, unless otherwise noted.) (Note 6)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Conversion Gain GC8.4 dB
Conversion Gain Flatness
Flatness over any one of three frequency
bands:
fRF = 1710MHz to 1785MHz
fRF = 1850MHz to 1910MHz
fRF = 1920MHz to 1980MHz
±0.1 dB
G ai n V ar i ati on Over Tem p er atur eTC
CG TC = -40°C to +85°C -0.009 dB/°C
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
_______________________________________________________________________________________ 7
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(
Typical Application Circuit
. Typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 1800MHz, fLO = 1610MHz,
fIF = 190MHz, TC= +25°C, unless otherwise noted.) (Note 6)
Note 5: Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See
the
Typical Operating Characteristics
.
Note 6: All limits reflect losses of external components, including a 0.65dB loss at fIF = 190MHz due to the 4:1 impedance trans-
former. Output measurements were taken at IF outputs of the
Typical Application Circuit
.
Note 7: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50Ωsource.
Note 8: Guaranteed by design and characterization.
Note 9: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of
all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021:
Specifications and
Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
Note 10: Limited production testing.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Input Compression Point IP1dB (Note 7) 8.9 dBm
Input Intercept Point IIP3 fRF1 - fRF2 = 1MHz 18.5 dBm
Input Intercept Variation Over
Temperature TCIIP3 fRF1 - fRF2 = 1MHz, TC = -40°C to +85°C 0.0034 dBm/°C
Noise Figure NFSSB Single sideband, no blockers present 9.0 dB
Noise Figure Temperature
Coefficient TCNF Single sideband, no blockers present,
TC = -40°C to +85°C 0.016 dB/°C
PRF = -10dBm 73
2RF-2LO Spur Rejection 2 x 2 PRF = -5dBm 68 dBc
PRF = -10dBm 70
3RF-3LO Spur Rejection 3 x 3 PRF = -5dBm 60 dBc
RF Input Return Loss LO on and IF terminated 21 dB
LO port selected, RF and IF terminated into
matched impedance 16
LO Input Return Loss LO port unselected, RF and IF terminated
into matched impedance 20
dB
IF Return Loss
RF terminated into 50Ω, LO driven by 50Ω
source, IF transformed to 50Ω using
external components shown in Typical
Application Circuit, fIF = 190MHz
12.5 dB
RF-to-IF Isolation 42 dB
LO Leakage at RF Port -40 dBm
2LO Leakage at RF Port -29 dBm
LO Leakage at IF Port -43 dBm
RFMAIN converted power measured at
IFD_, relative to IFM_, all unused ports
terminated to 50Ω
49
Channel Isolation RFDIV converted power measured at IFM_,
relative to IFD_, all unused ports terminated
to 50Ω
49
dB
LO-to-LO Isolation PLO1 = +3dBm, PLO2 = +3dBm,
fLO1 = 1610MHz, fLO2 = 1611MHz 55 dB
LO Switching Time 50% of LO S E L to IF settl ed w i thi n 2 d eg r ees 50 ns
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
8 _______________________________________________________________________________________
CONVERSION GAIN vs. RF FREQUENCY
MAX19995 toc01
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
230021001900
7
8
9
10
11
6
1700 2500
TC = -30°C
TC = +85°C
TC = +25°C
CONVERSION GAIN vs. RF FREQUENCY
MAX19995 toc02
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
230021001900
7
8
9
10
11
6
1700 2500
PLO = -3dBm, 0dBm, +3dBm
CONVERSION GAIN vs. RF FREQUENCY
MAX19995 toc03
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
230021001900
7
8
9
10
11
6
1700 2500
VCC = 4.75V, 5.0V, 5.25V
INPUT IP3 vs. RF FREQUENCY
MAX19995 toc04
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
230021001900
21
22
23
24
25
20
1700 2500
TC = -30°C
TC = +85°C
PRF = -5dBm/TONE
TC = +25°C
INPUT IP3 vs. RF FREQUENCY
MAX19995 toc05
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
230021001900
21
22
23
24
25
20
1700 2500
PLO = -3dBm
PLO = 0dBm
PLO = +3dBm
PRF = -5dBm/TONE
INPUT IP3 vs. RF FREQUENCY
MAX19995 toc06
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
230021001900
21
22
23
24
25
20
1700 2500
VCC = 5.25V
VCC = 4.75V
VCC = 5.0V
PRF = -5dBm/TONE
NOISE FIGURE vs. RF FREQUENCY
MAX19995 toc07
RF FREQUENCY (MHz)
NOISE FIGURE (dB)
230021001900
8
7
9
10
11
12
6
1700 2500
TC = -30°C
TC = +85°C
TC = +25°C
NOISE FIGURE vs. RF FREQUENCY
MAX19995 toc08
RF FREQUENCY (MHz)
NOISE FIGURE (dB)
230021001900
8
7
9
10
11
12
6
1700 2500
PLO = -3dBm, 0dBm, +3dBm
Typical Operating Characteristics
(
Typical Application Circuit
, optimized for the DCS/PCS band,R1 = R4 = 806Ω,R2 = R5 = 2.32kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)
NOISE FIGURE vs. RF FREQUENCY
MAX19995 toc09
RF FREQUENCY (MHz)
NOISE FIGURE (dB)
230021001900
8
7
9
10
11
12
6
1700 2500
VCC = 4.75V, 5.0V, 5.25V
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
_______________________________________________________________________________________
9
2RF-2LO RESPONSE vs. RF FREQUENCY
MAX19995 toc10
RF FREQUENCY (MHz)
2RF-2LO RESPONSE (dBc)
230021001900
60
70
80
90
50
1700 2500
TC = -30°C
TC = +85°C
TC = +25°C
PRF = -5dBm
2RF-2LO RESPONSE vs. RF FREQUENCY
MAX19995 toc11
RF FREQUENCY (MHz)
2RF-2LO RESPONSE (dBc)
230021001900
60
70
80
90
50
1700 2500
PRF = -5dBm
PLO = -3dBm
PLO = 0dBm
PLO = +3dBm
2RF-2LO RESPONSE vs. RF FREQUENCY
MAX19995 toc12
RF FREQUENCY (MHz)
2RF-2LO RESPONSE (dBc)
230021001900
60
70
80
90
50
1700 2500
PRF = -5dBm
VCC = 4.75V, 5.0V, 5.25V
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19995 toc13
RF FREQUENCY (MHz)
3RF-3LO RESPONSE (dBc)
230021001900
65
75
85
95
55
1700 2500
PRF = -5dBm
TC = -30°C
TC = +85°C
TC = +25°C
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19995 toc14
RF FREQUENCY (MHz)
3RF-3LO RESPONSE (dBc)
230021001900
65
75
85
95
55
1700 2500
PRF = -5dBm
PLO = -3dBm, 0dBm, +3dBm
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, optimized for the DCS/PCS band,R1 = R4 = 806Ω,R2 = R5 = 2.32kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19995 toc15
RF FREQUENCY (MHz)
3RF-3LO RESPONSE (dBc)
230021001900
65
75
85
95
55
1700 2500
PRF = -5dBm
VCC = 5.25V
VCC = 4.75V
VCC = 5.0V
INPUT P1dB vs. RF FREQUENCY
MAX19995 toc16
RF FREQUENCY (MHz)
INPUT P1dB (dBm)
230021001900
12
11
13
14
15
10
1700 2500
TC = +85°C
TC = -30°C
TC = +25°C
INPUT P1dB vs. RF FREQUENCY
MAX19995 toc17
RF FREQUENCY (MHz)
INPUT P1dB (dBm)
230021001900
12
11
13
14
15
10
1700 2500
PLO = -3dBm, 0dBm, +3dBm
INPUT P1dB vs. RF FREQUENCY
MAX19995 toc18
RF FREQUENCY (MHz)
INPUT P1dB (dBm)
230021001900
12
11
13
14
15
10
1700 2500
VCC = 5.25V
VCC = 4.75V
VCC = 5.0V
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
10 ______________________________________________________________________________________
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19995 toc19
RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
230021001900
45
40
35
50
55
60
30
1700 2500
TC = -30°C, +25°C, +85°C
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19995 toc20
RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
230021001900
45
40
35
50
55
60
30
1700 2500
PLO = -3dBm, 0dBm, +3dBm
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19995 toc21
RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
230021001900
45
40
35
50
55
60
30
1700 2500
VCC = 4.75V, 5.0V, 5.25V
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
MAX19995 toc22
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
210019001700
-35
-40
-45
-30
-25
-20
-50
1500 2300
TC = -30°C, +25°C, +85°C
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, optimized for the DCS/PCS band,R1 = R4 = 806Ω,R2 = R5 = 2.32kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
MAX19995 toc23
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
210019001700
-35
-40
-45
-30
-25
-20
-50
1500 2300
PLO = -3dBm, 0dBm, +3dBm
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
MAX19995 toc24
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
210019001700
-35
-40
-45
-30
-25
-20
-50
1500 2300
VCC = 5.25V
VCC = 4.75V
VCC = 5.0V
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19995 toc25
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
230021001900
40
35
45
50
30
1700 2500
TC = -30°C, +25°C, +85°C
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19995 toc26
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
230021001900
40
35
45
50
30
1700 2500
PLO = -3dBm, 0dBm, +3dBm
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19995 toc27
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
230021001900
40
35
45
50
30
1700 2500
VCC = 4.75V, 5.0V, 5.25V
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
______________________________________________________________________________________
11
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc28
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
22001800 20001600
-50
-60
-30
-40
-20
-70
1400 2400
TC = -30°C, +25°C, +85°C
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc29
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
22001800 20001600
-50
-60
-30
-40
-20
-70
1400 2400
PLO = -3dBm, 0dBm, +3dBm
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc30
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
22001800 20001600
-50
-60
-30
-40
-20
-70
1400 2400
VCC = 4.75V, 5.0V, 5.25V
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, optimized for the DCS/PCS band,R1 = R4 = 806Ω,R2 = R5 = 2.32kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc31
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
22001800 20001600
-40
-50
-20
-30
-10
-60
1400 2400
TC = +85°C
TC = -30°C
TC = +25°C
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc32
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
22001800 20001600
-40
-50
-20
-30
-10
-60
1400 2400
PLO = -3dBm, 0dBm, +3dBm
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc33
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
22001800 20001600
-40
-50
-20
-30
-10
-60
1400 2400
VCC = 4.75V, 5.0V, 5.25V
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19995 toc34
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
2000 21501700 18501550
50
60
70
40
1400 2300
TC = +85°C
TC = -30°C
TC = +25°C
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19995 toc35
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
2000 21501700 18501550
50
60
70
40
1400 2300
P
LO
= -3dBm, 0dBm, +3dBm
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19995 toc36
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
2000 21501700 18501550
50
60
70
40
1400 2300
VCC = 4.75V, 5.0V, 5.25V
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
12 ______________________________________________________________________________________
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, optimized for the DCS/PCS band,R1 = R4 = 806Ω,R2 = R5 = 2.32kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)
RF PORT RETURN LOSS
vs. RF FREQUENCY
MAX19995 toc37
RF FREQUENCY (MHz)
RF PORT RETURN LOSS (dB)
23001900 2100
20
25
10
15
5
0
30
1700 2500
PLO = -3dBm, 0dBm, +3dBm
fIF = 190MHz
IF PORT RETURN LOSS
vs. IF FREQUENCY
MAX19995 toc38
IF FREQUENCY (MHz)
IF PORT RETURN LOSS (dB)
410140 230 320
15
10
5
0
20
50 500
fLO = 1610MHz
VCC = 4.75V, 5.0V, 5.25V
LO SELECTED RETURN LOSS
vs. LO FREQUENCY
MAX19995 toc39
LO FREQUENCY (MHz)
LO SELECTED RETURN LOSS (dB)
22001600 1800 2000
15
10
5
0
30
25
20
1400 2400
PLO = -3dBm
PLO = 0dBm
PLO = +3dBm
LO UNSELECTED RETURN LOSS
vs. LO FREQUENCY
MAX19995 toc40
LO FREQUENCY (MHz)
LO UNSELECTED RETURN LOSS (dB)
2200 24001600 1800 2000
15
10
5
0
30
25
20
1400
PLO = -3dBm, 0dBm, +3dBm
SUPPLY CURRENT
vs. TEMPERATURE (TC)
MAX19995 toc41
TEMPERATURE (°C)
SUPPLY CURRENT (mA)
65 85-15 5 25 45
300
320
340
260
280
-35
VCC = 5.25V
VCC = 4.75V
VCC = 5.0V
CONVERSION GAIN vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
MAX19995 toc42
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
25001900 2100 2300
9
8
10
11
6
7
1700
0Ω, 3.6nH, 6.8nH, 10nH
INPUT IP3 vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
MAX19995 toc43
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
25001900 2100 2300
23
22
24
25
20
21
1700
0Ω
6.8nH
10nH
3.6nH
PRF = -5dBm/TONE
2RF-2LO RESPONSE vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
MAX19995 toc44
RF FREQUENCY (MHz)
2RF-2LO RESPONSE (dBc)
25001900 2100 2300
70
80
90
50
60
1700
0Ω
6.8nH, 10nH 3.6nH
PRF = -5dBm
3RF-3LO RESPONSE vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
MAX19995 toc45
RF FREQUENCY (MHz)
3RF-3LO RESPONSE (dBc)
25001900 2100 2300
75
85
95
55
65
1700
0Ω
10nH
6.8nH
3.6nH
PRF = -5dBm
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
______________________________________________________________________________________
13
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, optimized for the DCS/PCS band,R1 = R4 = 806Ω,R2 = R5 = 2.32kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)
CHANNEL ISOLATION vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
MAX19995 toc46
RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
25001900 2100 2300
45
55
50
60
30
35
40
1700
0Ω
10nH
6.8nH
3.6nH
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
MAX19995 toc47
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
23001700 1900 2100
-40
-30
-20
-60
-50
1500
0Ω
10nH
6.8nH
3.6nH
RF-TO-IF ISOLATION vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
MAX19995 toc48
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
25001900 2100 2300
40
50
60
20
30
1700
0Ω
10nH
6.8nH
3.6nH
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
14 ______________________________________________________________________________________
CONVERSION GAIN vs. RF FREQUENCY
MAX19995 toc49
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
230021001900
7
8
9
10
11
6
1700 2500
TC = -30°C
TC = +85°C
TC = +25°C
CONVERSION GAIN vs. RF FREQUENCY
MAX19995 toc50
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
230021001900
7
8
9
10
11
6
1700 2500
PLO = -3dBm, 0dBm, +3dBm
CONVERSION GAIN vs. RF FREQUENCY
MAX19995 toc51
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
230021001900
7
8
9
10
11
6
1700 2500
VCC = 4.75V, 5.0V, 5.25V
INPUT IP3 vs. RF FREQUENCY
MAX19995 toc52
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
230021001900
22
21
23
24
25
26
20
1700 2500
TC = -30°C
TC = +85°C
PRF = -5dBm/TONE
TC = +25°C
INPUT IP3 vs. RF FREQUENCY
MAX19995 toc53
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
230021001900
21
22
23
24
25
26
20
1700 2500
PRF = -5dBm/TONE
PLO = -3dBm, 0dBm, +3dBm
INPUT IP3 vs. RF FREQUENCY
MAX19995 toc54
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
230021001900
21
22
23
24
25
26
20
1700 2500
VCC = 5.25V
VCC = 4.75V
VCC = 5.0V
PRF = -5dBm/TONE
NOISE FIGURE vs. RF FREQUENCY
MAX19995 toc55
RF FREQUENCY (MHz)
NOISE FIGURE (dB)
230021001900
8
7
9
10
11
12
6
1700 2500
TC = -30°C
TC = +85°C
TC = +25°C
NOISE FIGURE vs. RF FREQUENCY
MAX19995 toc56
RF FREQUENCY (MHz)
NOISE FIGURE (dB)
230021001900
8
7
9
10
11
12
6
1700 2500
PLO = -3dBm, 0dBm, +3dBm
NOISE FIGURE vs. RF FREQUENCY
MAX19995 toc57
RF FREQUENCY (MHz)
NOISE FIGURE (dB)
230021001900
8
7
9
10
11
12
6
1700 2500
VCC = 4.75V, 5.0V, 5.25V
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, optimized for the UMTS band, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
______________________________________________________________________________________
15
2RF-2LO RESPONSE vs. RF FREQUENCY
MAX19995 toc58
RF FREQUENCY (MHz)
2RF-2LO RESPONSE (dBc)
230021001900
60
70
80
90
50
1700 2500
TC = -30°C
TC = +85°C
TC = +25°C
PRF = -5dBm
2RF-2LO RESPONSE vs. RF FREQUENCY
MAX19995 toc59
RF FREQUENCY (MHz)
2RF-2LO RESPONSE (dBc)
230021001900
60
70
80
90
50
1700 2500
PRF = -5dBm
PLO = -3dBm
PLO = 0dBm
PLO = +3dBm
2RF-2LO RESPONSE vs. RF FREQUENCY
MAX19995 toc60
RF FREQUENCY (MHz)
2RF-2LO RESPONSE (dBc)
230021001900
60
70
80
90
50
1700 2500
VCC = 4.75V, 5.0V, 5.25V
PRF = -5dBm
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19995 toc61
RF FREQUENCY (MHz)
3RF-3LO RESPONSE (dBc)
230021001900
65
75
85
95
55
1700 2500
TC = -30°C
TC = +85°C
TC = +25°C
PRF = -5dBm
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19995 toc62
RF FREQUENCY (MHz)
3RF-3LO RESPONSE (dBc)
230021001900
65
75
85
95
55
1700 2500
PRF = -5dBm
PLO = -3dBm, 0dBm, +3dBm
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19995 toc63
RF FREQUENCY (MHz)
3RF-3LO RESPONSE (dBc)
230021001900
65
75
85
95
55
1700 2500
PRF = -5dBm
VCC = 5.25V
VCC = 4.75V
VCC = 5.0V
INPUT P1dB vs. RF FREQUENCY
MAX19995 toc64
RF FREQUENCY (MHz)
INPUT P1dB (dBm)
230021001900
12
11
13
14
16
15
10
1700 2500
TC = +85°C
TC = -30°C
TC = +25°C
INPUT P1dB vs. RF FREQUENCY
MAX19995 toc65
RF FREQUENCY (MHz)
INPUT P1dB (dBm)
230021001900
12
11
13
14
16
15
10
1700 2500
PLO = -3dBm, 0dBm, +3dBm
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, optimized for the UMTS band, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)
INPUT P1dB vs. RF FREQUENCY
MAX19995 toc66
RF FREQUENCY (MHz)
INPUT P1dB (dBm)
230021001900
12
11
13
14
16
15
10
1700 2500
VCC = 5.25V
VCC = 4.75V
VCC = 5.0V
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
16 ______________________________________________________________________________________
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19995 toc67
RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
230021001900
45
40
35
50
55
60
30
1700 2500
TC = -30°C, +25°C, +85°C
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19995 toc68
RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
230021001900
45
40
35
50
55
60
30
1700 2500
PLO = -3dBm, 0dBm, +3dBm
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19995 toc69
RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
230021001900
45
40
35
50
55
60
30
1700 2500
VCC = 4.75V, 5.0V, 5.25V
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
MAX19995 toc70
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
210019001700
-35
-40
-45
-30
-25
-20
-50
1500 2300
TC = +85°C
TC = -30°C, +25°C
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
MAX19995 toc71
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
210019001700
-35
-40
-45
-30
-25
-20
-50
1500 2300
PLO = -3dBm, 0dBm, +3dBm
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
MAX19995 toc72
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
210019001700
-35
-40
-45
-30
-25
-20
-50
1500 2300
VCC = 5.25V
VCC = 4.75V
VCC = 5.0V
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19995 toc73
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
230021001900
40
35
45
50
30
1700 2500
TC = -30°C, +25°C, +85°C
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, optimized for the UMTS band, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19995 toc74
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
230021001900
40
35
45
50
30
1700 2500
PLO = -3dBm, 0dBm, +3dBm
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19995 toc75
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
230021001900
40
35
45
50
30
1700 2500
VCC = 4.75V, 5.0V, 5.25V
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
______________________________________________________________________________________
17
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc76
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
2000 220018001600
-50
-40
-60
-30
-20
-70
1400 2400
TC = -30°C, +25°C, +85°C
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc77
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
2000 220018001600
-50
-40
-60
-30
-20
-70
1400 2400
PLO = -3dBm, 0dBm, +3dBm
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc78
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
2000 220018001600
-50
-40
-60
-30
-20
-70
1400 2400
VCC = 4.75V, 5.0V, 5.25V
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc79
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
22001800 20001600
-40
-50
-20
-30
-10
-60
1400 2400
TC = +85°C
TC = -30°C
TC = +25°C
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, optimized for the UMTS band, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc80
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
22001800 20001600
-40
-50
-20
-30
-10
-60
1400 2400
PLO = 0dBm, +3dBm
PLO = -3dBm
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc81
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
22001800 20001600
-40
-50
-20
-30
-10
-60
1400 2400
VCC = 4.75V, 5.0V, 5.25V
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19995 toc82
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
2000 21501700 18501550
50
60
70
40
1400 2300
TC = +85°C
TC = -30°C
TC = +25°C
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19995 toc83
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
2000 21501700 18501550
50
60
70
40
1400 2300
P
LO
= -3dBm, 0dBm, +3dBm
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19995 toc84
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
2000 21501700 18501550
50
60
70
40
1400 2300
VCC = 4.75V, 5.0V, 5.25V
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
18 ______________________________________________________________________________________
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, optimized for the UMTS band, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC = +5.0V, PLO = 0dBm,
PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC= +25°C, unless otherwise noted.)
RF PORT RETURN LOSS
vs. RF FREQUENCY
MAX19995 toc85
RF FREQUENCY (MHz)
RF PORT RETURN LOSS (dB)
23001900 2100
30
40
20
10
0
50
1700 2500
PLO = -3dBm, 0dBm, +3dBm
fIF = 190MHz
IF PORT RETURN LOSS
vs. IF FREQUENCY
MAX19995 toc86
IF FREQUENCY (MHz)
IF PORT RETURN LOSS (dB)
410140 230 320
15
10
5
0
20
50 500
fLO = 1610MHz
VCC = 4.75V, 5.0V, 5.25V
LO SELECTED RETURN LOSS
vs. LO FREQUENCY
MAX19995 toc87
LO FREQUENCY (MHz)
LO SELECTED RETURN LOSS (dB)
22001600 1800 2000
15
10
5
0
30
25
20
1400 2400
PLO = -3dBm
PLO = 0dBm
PLO = +3dBm
LO UNSELECTED RETURN LOSS
vs. LO FREQUENCY
MAX19995 toc88
LO FREQUENCY (MHz)
LO UNSELECTED RETURN LOSS (dB)
2200 24001600 1800 2000
15
10
5
0
30
25
20
1400
PLO = -3dBm, 0dBm, +3dBm
SUPPLY CURRENT
vs. TEMPERATURE (TC)
MAX19995 toc89
TEMPERATURE (°C)
SUPPLY CURRENT (mA)
65 85-15 5 25 45
360
380
400
320
340
-35
VCC = 5.25V
VCC = 4.75V
VCC = 5.0V
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
______________________________________________________________________________________
19
CONVERSION GAIN vs. RF FREQUENCY
MAX19995 toc90
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
25001900 2100 2300
9
8
10
11
5
6
7
1700
VCC = 3.3V
TC = +85°C
TC = -30°C
TC = +25°C
CONVERSION GAIN vs. RF FREQUENCY
MAX19995 toc91
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
25001900 2100 2300
9
8
10
11
5
6
7
1700
VCC = 3.3V
PLO = -3dBm, 0dBm, +3dBm
CONVERSION GAIN vs. RF FREQUENCY
MAX19995 toc92
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
25001900 2100 2300
9
8
10
11
5
6
7
1700
VCC = 3.6V
VCC = 3.0V
VCC = 3.3V
INPUT IP3 vs. RF FREQUENCY
MAX19995 toc93
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
230021001900
16
14
18
20
22
12
1700 2500
TC = -30°C
TC = +85°C
TC = +25°C
VCC = 3.3V
PRF = -5dBm/TONE
INPUT IP3 vs. RF FREQUENCY
MAX19995 toc94
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
230021001900
14
16
18
20
22
12
1700 2500
PLO = -3dBm, 0dBm, +3dBm
VCC = 3.3V
PRF = -5dBm/TONE
INPUT IP3 vs. RF FREQUENCY
MAX19995 toc95
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
230021001900
14
16
18
20
22
12
1700 2500
VCC = 3.6V
VCC = 3.3V
VCC = 3.0V
VCC = 3.3V
PRF = -5dBm/TONE
NOISE FIGURE vs. RF FREQUENCY
MAX19995 toc96
RF FREQUENCY (MHz)
NOISE FIGURE (dB)
230021001900
8
7
9
10
11
13
12
6
1700 2500
TC = -30°C
TC = +85°C
TC = +25°C
VCC = 3.3V
NOISE FIGURE vs. RF FREQUENCY
MAX19995 toc97
RF FREQUENCY (MHz)
NOISE FIGURE (dB)
230021001900
8
7
9
10
11
13
12
6
1700 2500
VCC = 3.3V
PLO = -3dBm, 0dBm, +3dBm
NOISE FIGURE vs. RF FREQUENCY
MAX19995 toc98
RF FREQUENCY (MHz)
NOISE FIGURE (dB)
230021001900
8
7
9
10
11
13
12
6
1700 2500
VCC = 3.0V
VCC = 3.3V, 3.6V
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, R1 = R4 = 909Ω,R2 = R5 = 2.49kΩ, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected
for a 190MHz IF, TC= +25°C, unless otherwise noted.)
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
20 ______________________________________________________________________________________
2RF-2LO RESPONSE vs. RF FREQUENCY
MAX19995 toc99
RF FREQUENCY (MHz)
2RF-2LO RESPONSE (dBc)
230021001900
50
60
70
80
40
1700 2500
TC = -30°C
TC = +85°C
T
C
= +25°C
PRF = -5dBm
VCC = 3.3V
2RF-2LO RESPONSE vs. RF FREQUENCY
MAX19995 toc100
RF FREQUENCY (MHz)
2RF-2LO RESPONSE (dBc)
230021001900
50
60
70
80
40
1700 2500
PRF = -5dBm
PLO = 0dBm, +3dBm
PLO = -3dBm
VCC = 3.3V
2RF-2LO RESPONSE vs. RF FREQUENCY
MAX19995 toc101
RF FREQUENCY (MHz)
2RF-2LO RESPONSE (dBc)
230021001900
50
60
70
80
40
1700 2500
PRF = -5dBm
VCC = 3.3V
VCC = 3.6V
VCC = 3.0V
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19995 toc102
RF FREQUENCY (MHz)
3RF-3LO RESPONSE (dBc)
230021001900
40
50
60
70
30
1700 2500
TC = -30°C
TC = +85°C
TC = +25°C
PRF = -5dBm
VCC = 3.3V
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19995 toc103
RF FREQUENCY (MHz)
3RF-3LO RESPONSE (dBc)
230021001900
40
50
60
70
30
1700 2500
PRF = -5dBm
VCC = 3.3V
PLO = -3dBm, 0dBm, +3dBm
3RF-3LO RESPONSE vs. RF FREQUENCY
MAX19995 toc104
RF FREQUENCY (MHz)
3RF-3LO RESPONSE (dBc)
230021001900
40
50
60
70
30
1700 2500
PRF = -5dBm
VCC = 3.6V
VCC = 3.0V
VCC = 3.3V
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, R1 = R4 = 909Ω,R2 = R5 = 2.49kΩ, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected
for a 190MHz IF, TC= +25°C, unless otherwise noted.)
INPUT P1dB vs. RF FREQUENCY
MAX19995 toc105
RF FREQUENCY (MHz)
INPUT P1dB (dBm)
230021001900
7
6
8
9
12
11
10
5
1700 2500
TC = +85°C
TC = -30°CTC = +25°C
VCC = 3.3V
INPUT P1dB vs. RF FREQUENCY
MAX19995 toc106
RF FREQUENCY (MHz)
INPUT P1dB (dBm)
230021001900
8
6
7
9
10
12
11
5
1700 2500
PLO = -3dBm, 0dBm, +3dBm
VCC = 3.3V
INPUT P1dB vs. RF FREQUENCY
MAX19995 toc107
RF FREQUENCY (MHz)
INPUT P1dB (dBm)
230021001900
8
6
7
9
10
12
11
5
1700 2500
VCC = 3.6V
VCC = 3.0V
VCC = 3.3V
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
______________________________________________________________________________________
21
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19995 toc108
RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
230021001900
45
40
35
50
55
60
30
1700 2500
TC = -30°C, +25°C, +85°C
VCC = 3.3V
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19995 toc109
RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
230021001900
45
40
35
50
55
60
30
1700 2500
PLO = -3dBm, 0dBm, +3dBm
VCC = 3.3V
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19995 toc110
RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
230021001900
45
40
35
50
55
60
30
1700 2500
VCC = 3.0V, 3.3V, 3.6V
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
MAX19995 toc111
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
210019001700
-45
-50
-55
-40
-35
-30
-60
1500 2300
TC = +85°C
TC = -30°C
TC = +25°C
VCC = 3.3V
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
MAX19995 toc112
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
210019001700
-45
-50
-55
-40
-35
-30
-60
1500 2300
PLO = -3dBm
PLO = 0dBm
PLO = +3dBm
VCC = 3.3V
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
MAX19995 toc113
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
210019001700
-45
-50
-55
-40
-35
-30
-60
1500 2300
VCC = 3.3V
VCC = 3.0V
VCC = 3.6V
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19995 toc114
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
230021001900
45
35
40
50
60
55
30
1700 2500
TC = -30°C
TC = +85°C
TC = +25°C
VCC = 3.3V
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, R1 = R4 = 909Ω,R2 = R5 = 2.49kΩ, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected
for a 190MHz IF, TC= +25°C, unless otherwise noted.)
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19995 toc115
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
230021001900
45
35
40
50
60
55
30
1700 2500
VCC = 3.3V
PLO = -3dBm, 0dBm, +3dBm
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX19995 toc116
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
230021001900
45
35
40
50
60
55
30
1700 2500
VCC = 3.0V, 3.3V, 3.6V
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
22 ______________________________________________________________________________________
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc117
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
2000 220018001600
-50
-40
-60
-30
-20
-70
1400 2400
TC = -30°C
TC = +85°C
TC = +25°C
VCC = 3.3V
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc118
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
2000 220018001600
-50
-40
-60
-30
-20
-70
1400 2400
PLO = -3dBm, 0dBm, +3dBm
VCC = 3.3V
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc119
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
2000 220018001600
-50
-40
-60
-30
-20
-70
1400 2400
VCC = 3.6V
VCC = 3.0V
VCC = 3.3V
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc120
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
22001800 20001600
-40
-50
-20
-30
-10
-60
1400 2400
TC = -30°C, +25°C, +85°C
VCC = 3.3V
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc121
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
22001800 20001600
-40
-50
-20
-30
-10
-60
1400 2400
VCC = 3.3V
PLO = -3dBm, 0dBm, +3dBm
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc122
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
22001800 20001600
-40
-50
-20
-30
-10
-60
1400 2400
VCC = 3.6V
VCC = 3.0V
VCC = 3.3V
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, R1 = R4 = 909Ω,R2 = R5 = 2.49kΩ, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected
for a 190MHz IF, TC= +25°C, unless otherwise noted.)
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19995 toc123
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
2000 21501700 18501550
50
60
70
40
1400 2300
TC = +85°C
TC = -30°C
TC = +25°C
VCC = 3.3V
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19995 toc124
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
2000 21501700 18501550
50
60
70
40
1400 2300
VCC = 3.3V
PLO = -3dBm, 0dBm, +3dBm
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19995 toc125
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
2000 21501700 18501550
50
60
70
40
1400 2300
VCC = 3.0V, 3.3V, 3.6V
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
______________________________________________________________________________________
23
RF PORT RETURN LOSS
vs. RF FREQUENCY
MAX19995 toc126
RF FREQUENCY (MHz)
RF PORT RETURN LOSS (dB)
23001900 2100
30
40
20
10
0
50
1700 2500
PLO = -3dBm, 0dBm, +3dBm
fIF = 190MHz
VCC = 3.3V
IF PORT RETURN LOSS
vs. IF FREQUENCY
MAX19995 toc86
IF FREQUENCY (MHz)
IF PORT RETURN LOSS (dB)
410140 230 320
15
10
5
0
20
50 500
fLO = 1610MHz
VCC = 3.0V, 3.3V, 3.6V
LO SELECTED RETURN LOSS
vs. LO FREQUENCY
MAX19995 toc128
LO FREQUENCY (MHz)
LO SELECTED RETURN LOSS (dB)
22001600 1800 2000
15
10
5
0
30
25
20
1400 2400
PLO = -3dBm
PLO = 0dBm
PLO = +3dBm
VCC = 3.3V
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, R1 = R4 = 909Ω,R2 = R5 = 2.49kΩ, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected
for a 190MHz IF, TC= +25°C, unless otherwise noted.)
LO UNSELECTED RETURN LOSS
vs. LO FREQUENCY
MAX19995 toc129
LO FREQUENCY (MHz)
LO UNSELECTED RETURN LOSS (dB)
2200 24001600 1800 2000
15
10
5
0
30
25
20
1400
PLO = -3dBm, 0dBm, +3dBm
VCC = 3.3V
SUPPLY CURRENT
vs. TEMPERATURE (TC)
MAX19995 toc130
TEMPERATURE (°C)
SUPPLY CURRENT (mA)
65 85-15 5 25 45
220
240
260
180
200
-35
VCC = 3.3V
VCC = 3.0V
VCC = 3.6V
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
24 ______________________________________________________________________________________
Pin Description
PIN NAME FUNCTION
1 RFMAIN Main Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking capacitor.
2 TAPMAIN Main Channel Balun Center Tap. Bypass to GND with 39pF and 0.033µF capacitors as close as
possible to the pin with the smaller value capacitor closer to the part.
3, 5, 7, 12,
20, 22, 24,
25, 26, 34
GND Ground
4, 6, 10,
16, 21,
30, 36
VCC Power Supply. Bypass to GND with capacitors shown in the Typical Application Circuit as close as
possible to the pin.
8 TAPDIV Diversity Channel Balun Center Tap. Bypass to GND with 39pF and 0.033µF capacitors as close as
possible to the pin with the smaller value capacitor closer to the part.
9 RFDIV Diversity Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking capacitor.
11 IFD_SET IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for
the diversity IF amplifier.
13, 14 IFD+, IFD- Diversity Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the
Typical Application Circuit).
15 IND_EXTD
Diversity External Inductor Connection. Connect this pin to ground. For improved RF-to-IF and
LO-to-IF isolation, connect a low-ESR 10nH inductor from this pin to ground (see the Typical Operating
Characteristics for typical performance vs. inductor value).
17 LO_ADJ_D LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for
the diversity LO amplifier.
18, 28 N.C. No Connection. Not internally connected.
19 LO1 Local Oscillator 1 Input. This input is internally matched to 50Ω. Requires an input DC-blocking
capacitor.
23 LOSEL Local Oscillator Select. Set this pin to high to select LO1. Set to low to select LO2.
27 LO2 Local Oscillator 2 Input. This input is internally matched to 50Ω. Requires an input DC-blocking
capacitor.
29 LO_ADJ_M LO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the
main LO amplifier.
31 IND_EXTM
Main External Inductor Connection. Connect this pin to ground. For improved RF-to-IF and LO-to-IF
isolation, connect a low-ESR 10nH inductor from this pin to ground (see the Typical Operating
Characteristics for typical performance vs. Inductor value).
32, 33 IFM-, IFM+ Main Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the
Typical Application Circuit).
35 IFM_SET IF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the
main IF amplifier.
—EP
Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple
ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple via
grounds are also required to achieve the noted RF performance.
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
______________________________________________________________________________________ 25
Detailed Description
The MAX19995 is a dual-channel downconverter
designed to provide 9dB of conversion gain,
+24.8dBm input IP3, +13.3dBm 1dB input compres-
sion point, and a noise figure of 9dB.
In addition to its high-linearity performance, the
MAX19995 achieves a high level of component integra-
tion. The device integrates two double-balanced mixers
for two-channel downconversion. Both the main and
diversity channels include a balun and matching cir-
cuitry to allow 50Ωsingle-ended interfaces to the RF
ports and the two LO ports. An integrated single-pole,
double-throw (SPDT) switch provides 50ns switching
time between the two LO inputs, with 56dB of LO-to-LO
isolation and -31dBm of LO leakage at the RF port.
Furthermore, the integrated LO buffers provide a high
drive level to each mixer core, reducing the LO drive
required at the MAX19995’s inputs to a range of -3dBm
to +3dBm. The IF ports for both channels incorporate
differential outputs for downconversion, which is ideal
for providing enhanced 2RF-2LO performance.
Specifications are guaranteed over broad frequency
ranges to allow for use in WCDMA/LTE, DCS1800/
PCS1900 GSM/EDGE, and cdma2000 base stations.
The MAX19995 is specified to operate over an RF input
range of 1700MHz to 2200MHz, an LO range of
1400MHz to 2000MHz, and an IF range of 50MHz to
500MHz. The external IF components set the lower fre-
quency range. Operation beyond these ranges is pos-
sible; see the
Typical Operating Characteristics
for
additional information. Although this device is opti-
mized for low-side LO injection applications, it can
operate in high-side LO injection modes as well.
However, performance degrades as fLO continues to
increase. For increased high-side LO performance,
refer to the MAX19995A data sheet.
RF Port and Balun
The RF input ports of both the main and diversity chan-
nels are internally matched to 50Ω, requiring no exter-
nal matching components. A DC-blocking capacitor is
required as the input is internally DC shorted to ground
through the on-chip balun. The RF port input return loss
is typically better than 16dB over the RF frequency
range of 1700MHz to 2200MHz.
LO Inputs, Buffer, and Balun
The MAX19995 is optimized for a 1400MHz to
2000MHz LO frequency range. As an added feature,
the MAX19995 includes an internal LO SPDT switch for
use in frequency-hopping applications. The switch
selects one of the two single-ended LO ports, allowing
the external oscillator to settle on a particular frequency
before it is switched in. LO switching time is typically
50ns, which is more than adequate for typical GSM
applications. If frequency hopping is not employed,
simply set the switch to either of the LO inputs. The
switch is controlled by a digital input (LOSEL), where
logic-high selects LO1 and logic-low selects LO2. LO1
and LO2 inputs are internally matched to 50Ω, requir-
ing only 39pF DC-blocking capacitors.
If LOSEL is connected directly to a logic source, then
voltage MUST be applied to VCC before digital logic is
applied to LOSEL to avoid damaging the part.
Alternatively, a 1kΩresistor can be placed in series at
the LOSEL to limit the input current in applications
where LOSEL is applied before VCC.
The main and diversity channels incorporate a two-
stage LO buffer that allows for a wide-input power
range for the LO drive. The on-chip low-loss baluns,
along with LO buffers, drive the double-balanced mix-
ers. All interfacing and matching components from the
LO inputs to the IF outputs are integrated on chip.
High-Linearity Mixer
The core of the MAX19995 dual-channel downconverter
consists of two double-balanced, high-performance
passive mixers. Exceptional linearity is provided by the
large LO swing from the on-chip LO buffers. When com-
bined with the integrated IF amplifiers, the cascaded
IIP3, 2RF-2LO rejection, and noise figure performance
are typically +24.8dBm, 79dBc, and 9dB, respectively.
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
26 ______________________________________________________________________________________
Differential IF
The MAX19995 has an IF frequency range of 50MHz to
500MHz, where the low-end/high-end frequency
depends on the frequency response of the external IF
components. Note that these differential ports are ideal
for providing enhanced IIP2 performance. Single-
ended IF applications require a 4:1 (impedance ratio)
balun to transform the 200Ωdifferential IF impedance
to a 50Ωsingle-ended system. After the balun, the
return loss is typically 12.5dB. The user can use a dif-
ferential IF amplifier on the mixer IF ports, but a DC
block is required on both IFD+/IFD- and IFM+/IFM-
ports to keep external DC from entering the IF ports of
the mixer.
Applications Information
Input and Output Matching
The RF and LO inputs are internally matched to 50Ω.
No matching components are required. The RF port
input return loss is typically better than 16dB over the
RF frequency range of 1700MHz to 2200MHz and
return loss at the LO ports are typically better than
16dB over the entire LO range. RF and LO inputs
require only DC-blocking capacitors for interfacing.
The IF output impedance is 200Ω(differential). For
evaluation, an external low-loss 4:1 (impedance ratio)
balun transforms this impedance to a 50Ωsingle-ended
output (see the
Typical Application Circuit
).
Reduced-Power Mode
Each channel of the MAX19995 has two pins
(LO_ADJ_ _, IF_ _SET) that allow external resistors to
set the internal bias currents. Nominal values for these
resistors are given in Table 1. Larger value resistors
can be used to reduce power dissipation at the
expense of some performance loss. See the
Typical
Operating Characteristics
to evaluate the biasing vs.
performance tradeoff. If ±1% resistors are not readily
available, ±5% resistors may be substituted.
Significant reductions in power consumption can also be
realized by operating the mixer with an optional supply
voltage of +3.3V. Doing so reduces the overall power
consumption by up to 62%. See the
+3.3V Supply AC
Electrical Characteristics
and the relevant +3.3V curves
in the
Typical Operating Characteristics
section.
IND_EXT_ Inductors
For applications requiring optimum RF-to-IF and LO-to-
IF isolation, connect low-ESR inductors from IND_EXT_
(pins 15 and 31) to ground. When improved isolation is
not required, connect IND_EXT_ to ground using a 0Ω
resistance. See the
Typical Operating Characteristics
to
evaluate the isolation vs. inductor value tradeoff.
Layout Considerations
A properly designed PCB is an essential part of any
RF/microwave circuit. Keep RF signal lines as short as
possible to reduce losses, radiation, and inductance.
The load impedance presented to the mixer must be
such that any capacitance from both IF- and IF+ to
ground does not exceed several picofarads. For the
best performance, route the ground pin traces directly
to the exposed pad under the package. The PCB
exposed pad MUST be connected to the ground plane
of the PCB. It is suggested that multiple vias be used to
connect this pad to the lower-level ground planes. This
method provides a good RF/thermal-conduction path for
the device. Solder the exposed pad on the bottom of the
device package to the PCB. The MAX19995 evaluation
kit can be used as a reference for board layout. Gerber
files are available upon request at www.maxim-ic.com.
Power-Supply Bypassing
Proper voltage-supply bypassing is essential for high-
frequency circuit stability. Bypass each VCC pin and
TAPMAIN/TAPDIV with the capacitors shown in the
Typical Application Circuit
(see Table 1 for component
values). Place the TAPMAIN/TAPDIV bypass capacitors
to ground within 100 mils of the pin.
Exposed Pad RF/Thermal Considerations
The exposed pad (EP) of the MAX19995’s 36-pin thin
QFN-EP package provides a low thermal-resistance
path to the die. It is important that the PCB on which the
MAX19995 is mounted be designed to conduct heat
from the EP. In addition, provide the EP with a low-
inductance path to electrical ground. The EP MUST be
soldered to a ground plane on the PCB, either directly
or through an array of plated via holes.
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
______________________________________________________________________________________ 27
Table 1. Component Values
COMPONENT VALUE DESCRIPTION
C1, C2, C7, C8, C14, C16 39pF Microwave capacitors (0402)
C3, C6 0.033µF Microwave capacitors (0603)
C4, C5 — Not used
C9, C13, C15, C17, C18 0.01µF Microwave capacitors (0402)
C10, C11, C12, C19, C20, C21 150pF Microwave capacitors (0603)
L1, L2, L4, L5 330nH Wire-wound high-Q inductors (0805)
L3, L6 10nH
Wire-wound high-Q inductors (0603). Smaller values can be
used at the expense of some performance loss (see the
Typical Operating Characteristics).
806Ω
± 1% r esi stor s ( 0402) . U sed for D C S/PC S b a n d , VC C
= +5 .0 V
ap p l i cati ons. Lar g er val ues can b e used to r ed uce p ow er at the
exp ense of som e p er for m ance l oss.
681Ω
±1% resistors (0402). Used for UMTS band, VCC = +5.0V
applications. Larger values can be used to reduce power at
the expense of some performance loss.
R1, R4
909Ω±1% resistors (0402). Used for VCC = +3.3V applications.
2.32kΩ
± 1% r esi stor s ( 0402) . U sed for D C S/PC S b a n d , VC C
= +5 .0 V
ap p l i cati ons. Lar g er val ues can b e used to r ed uce p ow er at the
exp ense of som e p er for m ance l oss.
1.5kΩ
±1% resistors (0402). Used for UMTS band, VCC = +5.0V
applications. Larger values can be used to reduce power at
the expense of some performance loss.
R2, R5
2.49kΩ±1% resistors (0402). Used for VCC = +3.3V applications.
R3, R6 0Ω0Ω resistors (1206)
T1, T2 4:1 Transformers (200:50)
U1 — MAX19995 IC
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
28 ______________________________________________________________________________________
Typical Application Circuit
RF MAIN INPUT
RF DIV INPUT
C2C3
C1 +
C8
C9
C13
C17
C18
R1
VCC
L2
L1
R3
C20
C19
IF MAIN OUTPUT
T1
C16
R2
L3
LO2
C14
LO1
4:1
4:1
VCC
VCC
VCC
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18 28
29
30
31
32
33
34
35
36
19
20
21
22
23
24
25
26
27 LO2
VCC
GND
VCC
GND
GND
TAPDIV
TAPMAIN
RFMAIN
RFDIV
EXPOSED
PAD
IFD_SET
GND
IND_EXTD
LO_ADJ_D
N.C.
V
CC
V
CC
N.C.
LO_ADJ_M
V
CC
IND_EXTM
GND
IFM_SET
IFD+
IFD-
V
CC
IFM+
IFM-
LO1
LOSEL
GND
GND
GND
GND
GND
VCC
MAX19995
C4
C7C6
C5
VCC
VCC
C21
LO SELECT
C15
VCC
R5
R4
VCC
L4
L5
R6
L6
C10
C11
T2
IF DIV OUTPUT
C12
MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________
29
© 2008 Maxim Integrated Products is a registered trademark of Maxim Integrated Products, Inc.
Pin Configuration/Functional Diagram
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18 28
29
30
31
32
33
34
35
36
19
20
21
22
23
24
25
26
27 LO2
VCC
GND
VCC
GND
GND
TAPDIV
TAPMAIN
RFMAIN
RFDIV
EXPOSED
PAD
IFD_SET
GND
IND_EXTD
LO_ADJ_D
N.C.
VCC
VCC
N.C.
LO_ADJ_M
VCC
IND_EXTM
GND
IFM_SET
IFD+
IFD-
VCC
IFM+
IFM-
LO1
LOSEL
GND
GND
GND
GND
GND
VCC
MAX19995
EXPOSED PAD ON THE BOTTOM OF THE PACKAGE
THIN QFN (EXPOSED PAD)
6mm x 6mm
TOP VIEW
+
Chip Information
PROCESS: SiGe BiCMOS
Package Information
For the latest package outline information and land patterns, go
to www.maxim-ic.com/packages.
PACKAGE TYPE PACKAGE CODE DOCUMENT NO.
36 Thin QFN-EP T3666+2 21-0141
