19-4253; Rev 0; 12/08 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch The MAX19995 dual-channel downconverter provides 9dB of conversion gain, +24.8dBm input IP3, +13.3dBm 1dB input compression point, and a noise figure as low as 9dB for 1700MHz to 2200MHz diversity receiver applications. With an optimized LO frequency range of 1400MHz to 2000MHz, this mixer is ideal for low-side LO injection architectures. High-side LO injection is supported by the MAX19995A, which is pin-pin and functionally compatible with the MAX19995. In addition to offering excellent linearity and noise performance, the MAX19995 also yields a high level of component integration. This device includes two double-balanced passive mixer cores, two LO buffers, a dual-input LO selectable switch, and a pair of differential IF output amplifiers. Integrated on-chip baluns allow for single-ended RF and LO inputs. The MAX19995 requires a nominal LO drive of 0dBm and a typical supply current of 297mA at VCC = 5.0V or 212mA at VCC = 3.3V. The MAX19995/MAX19995A are pin compatible with the MAX19985/MAX19985A series of 700MHz to 1000MHz mixers and pin similar with the MAX19997A/ MAX19999 series of 1800MHz to 4000MHz mixers, making this entire family of downconverters ideal for applications where a common PCB layout is used across multiple frequency bands. The MAX19995 is available in a 6mm x 6mm, 36-pin thin QFN package with an exposed pad. Electrical performance is guaranteed over the extended temperature range, from TC = -40C to +85C. Applications UMTS/WCDMA/LTE Base Stations cdma2000(R) Base Stations DCS1800 and EDGE Base Stations Features 1700MHz to 2200MHz RF Frequency Range 1400MHz to 2000MHz LO Frequency Range 1750MHz to 2700MHz LO Frequency Range (MAX19995A) 50MHz to 500MHz IF Frequency Range 9dB Typical Conversion Gain 9dB Typical Noise Figure +24.8dBm Typical Input IP3 +13.3dBm Typical Input 1dB Compression Point 79dBc Typical 2RF-2LO Spurious Rejection at PRF = -10dBm Dual Channels Ideal for Diversity Receiver Applications 49dB Typical Channel-to-Channel Isolation Low -3dBm to +3dBm LO Drive Integrated LO Buffer Internal RF and LO Baluns for Single-Ended Inputs Built-In SPDT LO Switch with 56dB LO-to-LO Isolation and 50ns Switching Time Pin Compatible with the MAX19985/MAX19985A/ MAX19995A Series of 700MHz to 2200MHz Mixers Pin Similar to the MAX19997A/MAX19999 Series of 1800MHz to 4000MHz Mixers Single +5.0V or +3.3V Supply External Current-Setting Resistors Provide Option for Operating Device in Reduced-Power/ReducedPerformance Mode Ordering Information PCS1900 and EDGE Base Stations PHS/PAS Base Stations Fixed Broadband Wireless Access Wireless Local Loop Private Mobile Radios Military Systems TEMP RANGE PIN-PACKAGE MAX19995ETX+ PART -40C to +85C 36 Thin QFN-EP* MAX19995ETX+T -40C to +85C 36 Thin QFN-EP* +Denotes a lead(Pb)-free/RoHS-compliant package. *EP = Exposed pad. T = Tape and reel. Pin Configuration and Typical Application Circuit appear at end of data sheet. cdma2000 is a registered trademark of Telecommunications Industry Association. ________________________________________________________________ Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim's website at www.maxim-ic.com. 1 MAX19995 General Description MAX19995 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch ABSOLUTE MAXIMUM RATINGS VCC to GND ...........................................................-0.3V to +5.5V LO1, LO2 to GND ...............................................................0.3V Any Other Pins to GND...............................-0.3V to (VCC + 0.3V) RFMAIN, RFDIV, and LO_ Input Power ..........................+15dBm RFMAIN, RFDIV Current (RF is DC shorted to GND through a balun)...............................................................50mA Continuous Power Dissipation (Note 1) ...............................8.7W JA (Notes 2, 3)..............................................................+38C/W JC (Notes 1, 3)...............................................................7.4C/W Operating Case Temperature Range (Note 4) .............................................................-40C to +85C Junction Temperature ......................................................+150C Storage Temperature Range .............................-65C to +150C Lead Temperature (soldering, 10s) .................................+300C Note 1: Based on junction temperature TJ = TC + (JC x VCC x ICC). This formula can be used when the temperature of the exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction temperature must not exceed +150C. Note 2: Junction temperature TJ = TA + (JA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is known. The junction temperature must not exceed +150C. Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a fourlayer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial. Note 4: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. +5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS (Typical Application Circuit optimized for the DCS/PCS band, VCC = +4.75V to +5.25V, TC = -40C to +85C. R1 = R4 = 806, R2 = R5 = 2.32k. Typical values are at VCC = +5.0V, TC = +25C, unless otherwise noted. All parameters are production tested.) PARAMETER SYMBOL Supply Voltage VCC Supply Current ICC LOSEL Input High Voltage VIH LOSEL Input Low Voltage VIL LOSEL Input Current CONDITIONS MIN TYP MAX 4.75 5 5.25 V 297 370 mA 0.8 V +10 A Total supply current, VCC = +5.0V 2 IIH and IIL UNITS V -10 +3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS (Typical Application Circuit, VCC = +3.0V to +3.6V, TC = -40C to +85C, R1 = R4 = 909, R2 = R5 = 2.49k. Typical values are at VCC = +3.3V, TC = +25C, unless otherwise noted. All parameters are guaranteed by design and not production tested.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS 3.0 3.3 3.6 V Supply Voltage VCC Supply Current ICC 212 mA LOSEL Input High Voltage VIH 2 V LOSEL Input Low Voltage VIL 0.8 V 2 Total supply current, VCC = +3.3V _______________________________________________________________________________________ Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS RF Frequency fRF (Note 5) 1700 2200 MHz LO Frequency fLO (Note 5) 1400 2000 MHz Using Mini-Circuits TC4-1W-17 4:1 transformer as defined in the typical application circuit, IF matching components affect the IF frequency range (Note 5) 100 500 MHz 50 250 MHz -3 +3 dBm IF Frequency f IF Using alternative Mini-Circuits TC4-1W-7A 4:1 transformer, IF matching components affect the IF frequency range (Note 5) LO Drive Level PLO +5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (Typical Application Circuit optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50 sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 1700MHz to 2000MHz, fLO = 1510MHz to 1810MHz, fIF = 190MHz, fRF > fLO, TC = -40C to +85C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC = +25C, unless otherwise noted.) (Note 6) PARAMETER SYMBOL CONDITIONS TC = +25C Conversion Gain GC Conversion Gain Flatness Gain Variation Over Temperature TCCG IP1dB TYP MAX 7 9 11 7.8 9 10.2 UNITS dB Typical Application Circuit optimized for UMTS band (R1 = R4 = 681, R2 = R5 = 1.5k), fLO = 1760MHz, fRF = 1950MHz 8.9 Flatness over any one of three frequency bands: fRF = 1710MHz to 1785MHz fRF = 1850MHz to 1910MHz fRF = 1920MHz to 1980MHz 0.1 dB -0.009 dB/C fRF = 1700MHz to 2000MHz, fLO = 1510MHz to 1810MHz, fIF = 190MHz, TC = -40C to +85C fRF = 1700MHz for min value Input Compression Point (Note 7) MIN Typical Application Circuit optimized for UMTS band (R1 = R4 = 681, R2 = R5 = 1.5k), fLO = 1760MHz, fIF = 190MHz, fRF = 1950MHz 9.5 12.5 13.3 dBm _______________________________________________________________________________________ 3 MAX19995 RECOMMENDED AC OPERATING CONDITIONS MAX19995 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch +5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued) (Typical Application Circuit optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50 sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 1700MHz to 2000MHz, fLO = 1510MHz to 1810MHz, fIF = 190MHz, fRF > fLO, TC = -40C to +85C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC = +25C, unless otherwise noted.) (Note 6) PARAMETER Input Intercept Point SYMBOL IIP3 MIN TYP fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, fRF = 2000MHz for min value CONDITIONS 20.5 23.7 fIF = 190MHz, fLO = 1810MHz, fRF = 2000MHz for min value, fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, TC = +25C to +85C 21.5 23.7 Typical Application Circuit optimized for UMTS band (R1 = R4 = 681, R2 = R5 = 1.5k), fLO = 1760MHz, fIF = 190MHz, fRF = 1950MHz, fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone Input Intercept Variation Over Temperature Noise Figure Noise Figure Temperature Coefficient Noise Figure with Blocker 4 TCIIP3 NFSSB fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone, TC = -40C to +85C MAX dBm 24.8 0.0035 dBm/C Single sideband, no blockers present (Note 8) 9 11 fLO = 1610MHz, fIF = 190MHz, fRF = 1800MHz, TC = +25C, PLO = 0dBm, single sideband, no blockers present (Note 8) 9 9.6 Typical Application Circuit optimized for UMTS band (R1 = R4 = 681 , R2 = R5 = 1.5k), fIF = 190MHz, fLO = 1760MHz, fRF = 1950MHz, single sideband, no blockers present 9.3 TCNF Single sideband, no blockers present, TC = -40C to +85C NFB fBLOCKER = 1900MHz, PBLOCKER = +8dBm, fRF = 1800MHz, fLO = 1610MHz, PLO = 0dBm, VCC = +5.0V, TC = +25C (Notes 8, 9) UNITS dB 0.016 19 _______________________________________________________________________________________ dB/C 20.5 dB Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch (Typical Application Circuit optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50 sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 1700MHz to 2000MHz, fLO = 1510MHz to 1810MHz, fIF = 190MHz, fRF > fLO, TC = -40C to +85C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC = +25C, unless otherwise noted.) (Note 6) PARAMETER 2RF-2LO Spur Rejection 3RF-3LO Spur Rejection SYMBOL 2x2 3x3 MIN TYP fRF = 1800MHz, fLO = 1610MHz, PRF = -10dBm (Note 8) CONDITIONS 54 79 fRF = 1800MHz, fLO = 1610MHz, PRF = -5dBm (Note 8) 49 74 fRF = 1800MHz, fLO = 1610MHz, PLO = 0dBm, PRF = -10dBm, VCC = +5.0V, TC = +25C (Note 8) 56 79 fRF = 1800MHz, fLO = 1610MHz, PLO = 0dBm, PRF = -5dBm, VCC = +5.0V, TC = +25C (Note 8) 51 74 Typical Application Circuit optimized for UMTS band (R1 = R4 = 681, R2 = R5 = 1.5k), fIF = 190MHz, fLO = 1760MHz, fRF = 1950MHz, PRF = -10dBm 79 Typical Application Circuit optimized for UMTS band (R1 = R4 = 681, R2 = R5 = 1.5k), fIF = 190MHz, fLO = 1760MHz, fRF = 1950MHz, PRF = -5dBm 74 fRF = 1800MHz, fLO = 1610MHz, PRF = -10dBm (Note 8) 77 91 fRF = 1800MHz, fLO = 1610MHz, PRF = -5dBm (Note 8) 67 81 fRF = 1800MHz, fLO = 1610MHz, PLO = 0dBm, PRF = -10dBm, VCC = +5.0V, TC = +25oC (Note 8) 79 91 fRF = 1800MHz, fLO = 1600MHz, PLO = 0dBm, PRF = -5dBm, VCC = +5.0V, TC = +25C (Note 8) 69 81 Typical Application Circuit optimized for UMTS band (R1 = R4 = 681, R2 = R5 = 1.5k), fIF = 190MHz, fLO = 1760MHz, fRF = 1950MHz, PRF = -10dBm 86 Typical Application Circuit optimized for UMTS band (R1 = R4 = 681, R2 = R5 = 1.5k), fIF = 190MHz, fLO = 1760MHz, fRF = 1950MHz, PRF = -5dBm 76 MAX UNITS dBc dBc _______________________________________________________________________________________ 5 MAX19995 +5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued) MAX19995 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch +5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued) (Typical Application Circuit optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50 sources, PLO = -3dBm to +3dBm, PRF = -5dBm, fRF = 1700MHz to 2000MHz, fLO = 1510MHz to 1810MHz, fIF = 190MHz, fRF > fLO, TC = -40C to +85C. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC = +25C, unless otherwise noted.) (Note 6) PARAMETER SYMBOL RF Input Return Loss CONDITIONS MIN TYP LO and IF terminated into matched impedance, LO on 21 LO port selected, RF and IF terminated into matched impedance 20 MAX UNITS dB dB LO Input Return Loss LO port unselected, RF and IF terminated into matched impedance 19 Nominal differential impedance of the IC's IF outputs 200 IF Return Loss RF terminated into 50, LO driven by 50 source, IF transformed to 50 using external components shown in Typical Application Circuit 12.5 dB RF-to-IF Isolation fRF = 1700MHz for min value 39 dB IF Output Impedance ZIF 30 LO Leakage at RF Port (Notes 8, 10) -31 -24.7 dBm 2LO Leakage at RF Port (Note 8) -20 -16 dBm LO Leakage at IF Port (Note 8) -40 -27 dBm RFMAIN converted power measured at IFD_, relative to IFM_, all unused ports terminated to 50 40 49 dB Channel Isolation RFDIV converted power measured at IFM_, relative to IFD_, all unused ports terminated to 50 40 49 LO-to-LO Isolation PLO1 = +3dBm, PLO2 = +3dBm, fLO1 = 1610MHz, fLO2 = 1611MHz 40 56 dB LO Switching Time 50% of LOSEL to IF settled within 2 degrees 50 ns +3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (Typical Application Circuit. Typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC = +25C, unless otherwise noted.) (Note 6) PARAMETER Conversion Gain SYMBOL GC Flatness over any one of three frequency bands: fRF = 1710MHz to 1785MHz fRF = 1850MHz to 1910MHz fRF = 1920MHz to 1980MHz Conversion Gain Flatness Gain Variation Over Temperature 6 CONDITIONS TCCG TC = -40C to +85C MIN TYP MAX UNITS 8.4 dB 0.1 dB -0.009 dB/C _______________________________________________________________________________________ Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch (Typical Application Circuit. Typical values are at VCC = +3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 1800MHz, fLO = 1610MHz, fIF = 190MHz, TC = +25C, unless otherwise noted.) (Note 6) PARAMETER Input Compression Point Input Intercept Point SYMBOL IP1dB IIP3 CONDITIONS MIN TYP MAX UNITS (Note 7) 8.9 dBm fRF1 - fRF2 = 1MHz 18.5 dBm 0.0034 dBm/C Input Intercept Variation Over Temperature TCIIP3 fRF1 - fRF2 = 1MHz, TC = -40C to +85C Noise Figure NFSSB Single sideband, no blockers present 9.0 dB Noise Figure Temperature Coefficient TCNF Single sideband, no blockers present, TC = -40C to +85C 0.016 dB/C 2RF-2LO Spur Rejection 2x2 3RF-3LO Spur Rejection 3x3 PRF = -10dBm 73 PRF = -5dBm 68 dBc PRF = -10dBm 70 PRF = -5dBm 60 LO on and IF terminated 21 LO port selected, RF and IF terminated into matched impedance 16 LO port unselected, RF and IF terminated into matched impedance 20 RF terminated into 50, LO driven by 50 source, IF transformed to 50 using external components shown in Typical Application Circuit, fIF = 190MHz 12.5 dB RF-to-IF Isolation 42 dB LO Leakage at RF Port -40 dBm 2LO Leakage at RF Port -29 dBm LO Leakage at IF Port -43 dBm RF Input Return Loss LO Input Return Loss IF Return Loss dBc dB dB RFMAIN converted power measured at IFD_, relative to IFM_, all unused ports terminated to 50 49 RFDIV converted power measured at IFM_, relative to IFD_, all unused ports terminated to 50 49 LO-to-LO Isolation PLO1 = +3dBm, PLO2 = +3dBm, fLO1 = 1610MHz, fLO2 = 1611MHz 55 dB LO Switching Time 50% of LOSEL to IF settled within 2 degrees 50 ns Channel Isolation dB Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See the Typical Operating Characteristics. Note 6: All limits reflect losses of external components, including a 0.65dB loss at fIF = 190MHz due to the 4:1 impedance transformer. Output measurements were taken at IF outputs of the Typical Application Circuit. Note 7: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50 source. Note 8: Guaranteed by design and characterization. Note 9: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021: Specifications and Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers. Note 10: Limited production testing. Note 5: _______________________________________________________________________________________ 7 MAX19995 +3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued) Typical Operating Characteristics (Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.) TC = +85C TC = +25C 7 9 8 PLO = -3dBm, 0dBm, +3dBm 2300 1700 2500 INPUT IP3 vs. RF FREQUENCY MAX19995 toc04 25 MAX19995 toc03 1700 2500 TC = -30C 22 TC = +25C 2100 25 PLO = -3dBm PLO = 0dBm PRF = -5dBm/TONE 24 23 VCC = 5.25V 22 21 21 PLO = +3dBm 20 2300 2500 20 1700 PLO = -3dBm, 0dBm, +3dBm 2100 2300 RF FREQUENCY (MHz) 2500 2500 11 10 9 8 VCC = 4.75V, 5.0V, 5.25V 7 6 6 1900 2300 12 MAX19995 toc08 9 7 TC = -30C 2100 NOISE FIGURE vs. RF FREQUENCY 10 8 1900 RF FREQUENCY (MHz) NOISE FIGURE (dB) TC = +25C 6 8 11 NOISE FIGURE (dB) 9 1700 1700 2500 NOISE FIGURE vs. RF FREQUENCY 10 8 2300 12 MAX19995 toc07 TC = +85C 11 2100 RF FREQUENCY (MHz) NOISE FIGURE vs. RF FREQUENCY 12 1900 MAX19995 toc09 2100 RF FREQUENCY (MHz) 7 VCC = 5.0V 20 1900 2500 VCC = 4.75V TC = +85C 1700 2300 INPUT IP3 vs. RF FREQUENCY 23 22 1900 RF FREQUENCY (MHz) PRF = -5dBm/TONE 24 INPUT IP3 (dBm) INPUT IP3 (dBm) 23 21 2300 INPUT IP3 vs. RF FREQUENCY PRF = -5dBm/TONE 24 2100 RF FREQUENCY (MHz) RF FREQUENCY (MHz) 25 1900 INPUT IP3 (dBm) 2100 MAX19995 toc05 1900 VCC = 4.75V, 5.0V, 5.25V 6 6 1700 8 7 7 6 9 MAX19995 toc06 8 10 CONVERSION GAIN (dB) 9 11 MAX19995 toc02 10 CONVERSION GAIN (dB) CONVERSION GAIN (dB) 11 MAX19995 toc01 TC = -30C 10 CONVERSION GAIN vs. RF FREQUENCY CONVERSION GAIN vs. RF FREQUENCY CONVERSION GAIN vs. RF FREQUENCY 11 NOISE FIGURE (dB) MAX19995 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch 1700 1900 2100 2300 RF FREQUENCY (MHz) 2500 1700 1900 2100 2300 RF FREQUENCY (MHz) _______________________________________________________________________________________ 2500 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch 2RF-2LO RESPONSE vs. RF FREQUENCY 60 70 60 TC = +25C 50 50 2100 2300 50 1700 2500 3RF-3LO RESPONSE vs. RF FREQUENCY 2300 2500 1700 1900 TC = +85C 75 65 PRF = -5dBm 85 75 PLO = -3dBm, 0dBm, +3dBm 65 55 2300 2500 PRF = -5dBm 85 VCC = 5.25V 75 VCC = 4.75V 65 55 1700 RF FREQUENCY (MHz) 12 TC = +25C 2100 2300 RF FREQUENCY (MHz) 2500 2100 2300 2500 INPUT P1dB vs. RF FREQUENCY 13 12 PLO = -3dBm, 0dBm, +3dBm 15 14 VCC = 5.25V VCC = 5.0V 13 12 VCC = 4.75V 11 10 10 1900 1900 RF FREQUENCY (MHz) 11 TC = -30C 1700 1700 MAX19995 toc17 14 INPUT P1dB (dBm) INPUT P1dB (dBm) 2500 INPUT P1dB vs. RF FREQUENCY 13 11 2300 15 MAX19995 toc16 TC = +85C 14 2100 RF FREQUENCY (MHz) INPUT P1dB vs. RF FREQUENCY 15 1900 INPUT P1dB (dBm) 2100 2500 VCC = 5.0V 55 1900 2300 3RF-3LO RESPONSE vs. RF FREQUENCY 95 TC = -30C 1700 2100 RF FREQUENCY (MHz) 3RF-3LO RESPONSE vs. RF FREQUENCY MAX19995 toc13 TC = +25C 2100 95 3RF-3LO RESPONSE (dBc) 3RF-3LO RESPONSE (dBc) PRF = -5dBm 85 1900 RF FREQUENCY (MHz) RF FREQUENCY (MHz) 95 60 MAX19995 toc18 1900 70 VCC = 4.75V, 5.0V, 5.25V 3RF-3LO RESPONSE (dBc) 1700 80 PLO = 0dBm MAX19995 toc14 TC = -30C PLO = +3dBm PLO = -3dBm MAX19995 toc12 80 PRF = -5dBm MAX19995 toc15 70 PRF = -5dBm 2RF-2LO RESPONSE vs. RF FREQUENCY 90 2RF-2LO RESPONSE (dBc) 80 2RF-2LO RESPONSE (dBc) 2RF-2LO RESPONSE (dBc) TC = +85C MAX19995 toc10 PRF = -5dBm 90 MAX19995 toc11 2RF-2LO RESPONSE vs. RF FREQUENCY 90 10 1700 1900 2100 2300 RF FREQUENCY (MHz) 2500 1700 1900 2100 2300 2500 RF FREQUENCY (MHz) _______________________________________________________________________________________ 9 MAX19995 Typical Operating Characteristics (continued) (Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.) TC = -30C, +25C, +85C 35 45 PLO = -3dBm, 0dBm, +3dBm 35 30 1900 2100 2300 1900 2100 2300 2500 1700 1900 2100 2300 LO LEAKAGE AT IF PORT vs. LO FREQUENCY LO LEAKAGE AT IF PORT vs. LO FREQUENCY LO LEAKAGE AT IF PORT vs. LO FREQUENCY PLO = -3dBm, 0dBm, +3dBm -30 -35 -40 2100 2300 1500 LO FREQUENCY (MHz) 1900 2100 40 35 30 2300 RF FREQUENCY (MHz) 2500 1700 1900 2100 2300 LO FREQUENCY (MHz) 45 40 35 RF-TO-IF ISOLATION vs. RF FREQUENCY 50 VCC = 4.75V, 5.0V, 5.25V 45 40 35 30 30 2100 VCC = 4.75V 1500 2300 RF-TO-IF ISOLATION (dB) PLO = -3dBm, 0dBm, +3dBm RF-TO-IF ISOLATION (dB) 45 1900 -40 RF-TO-IF ISOLATION vs. RF FREQUENCY 50 MAX19995 toc25 TC = -30C, +25C, +85C -35 LO FREQUENCY (MHz) RF-TO-IF ISOLATION vs. RF FREQUENCY 50 1700 MAX19995 toc26 1900 VCC = 5.0V -30 -50 -50 1700 VCC = 5.25V -45 -45 -50 -25 MAX19995 toc24 MAX19995 toc23 -25 2500 -20 LO LEAKAGE AT IF PORT (dBm) -40 LO LEAKAGE AT IF PORT (dBm) MAX19995 toc22 -35 -20 -45 10 MAX19995 toc21 30 1700 RF FREQUENCY (MHz) -30 1700 VCC = 4.75V, 5.0V, 5.25V 40 RF FREQUENCY (MHz) TC = -30C, +25C, +85C 1500 45 RF FREQUENCY (MHz) -20 -25 2500 50 35 30 1700 LO LEAKAGE AT IF PORT (dBm) 50 40 55 CHANNEL ISOLATION (dB) 45 40 55 CHANNEL ISOLATION (dB) 50 CHANNEL ISOLATION vs. RF FREQUENCY 60 MAX19995 toc20 MAX19995 toc19 55 CHANNEL ISOLATION (dB) CHANNEL ISOLATION vs. RF FREQUENCY 60 MAX19995 toc27 CHANNEL ISOLATION vs. RF FREQUENCY 60 RF-TO-IF ISOLATION (dB) MAX19995 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch 1700 1900 2100 2300 RF FREQUENCY (MHz) 2500 1700 1900 2100 2300 RF FREQUENCY (MHz) ______________________________________________________________________________________ 2500 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch LO LEAKAGE AT RF PORT vs. LO FREQUENCY -40 TC = -30C, +25C, +85C -50 -60 1600 1800 2000 2200 -40 -50 PLO = -3dBm, 0dBm, +3dBm -60 MAX19995 toc30 -50 VCC = 4.75V, 5.0V, 5.25V -60 1600 1800 2000 2200 2400 1400 1600 1800 2000 2200 LO FREQUENCY (MHz) LO FREQUENCY (MHz) 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY -30 TC = +25C -40 TC = +85C -50 -30 -40 PLO = -3dBm, 0dBm, +3dBm -50 -60 -60 1600 1800 2000 2200 -20 -30 -40 VCC = 4.75V, 5.0V, 5.25V -50 -60 1400 2400 1600 1800 2000 2200 2400 1400 1600 1800 2000 2200 LO FREQUENCY (MHz) LO FREQUENCY (MHz) LO FREQUENCY (MHz) LO SWITCH ISOLATION vs. LO FREQUENCY LO SWITCH ISOLATION vs. LO FREQUENCY LO SWITCH ISOLATION vs. LO FREQUENCY TC = +25C 50 TC = +85C 60 50 PLO = -3dBm, 0dBm, +3dBm 1550 1700 1850 2000 LO FREQUENCY (MHz) 2150 2300 MAX19995 toc36 2400 60 50 VCC = 4.75V, 5.0V, 5.25V 40 40 70 LO SWITCH ISOLATION (dB) 60 MAX19995 toc35 TC = -30C 70 LO SWITCH ISOLATION (dB) MAX19995 toc34 70 2400 MAX19995 toc33 -20 -10 2LO LEAKAGE AT RF PORT (dBm) -20 -10 MAX19995 toc32 MAX19995 toc31 TC = -30C 1400 -40 LO FREQUENCY (MHz) -10 1400 -30 -70 1400 2400 2LO LEAKAGE AT RF PORT (dBm) 1400 2LO LEAKAGE AT RF PORT (dBm) -30 -20 -70 -70 LO SWITCH ISOLATION (dB) MAX19995 toc29 -30 -20 LO LEAKAGE AT RF PORT (dBm) MAX19995 toc28 LO LEAKAGE AT RF PORT (dBm) -20 LO LEAKAGE AT RF PORT vs. LO FREQUENCY LO LEAKAGE AT RF PORT (dBm) LO LEAKAGE AT RF PORT vs. LO FREQUENCY 40 1400 1550 1700 1850 2000 LO FREQUENCY (MHz) 2150 2300 1400 1550 1700 1850 2000 2150 2300 LO FREQUENCY (MHz) ______________________________________________________________________________________ 11 MAX19995 Typical Operating Characteristics (continued) (Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.) RF PORT RETURN LOSS vs. RF FREQUENCY IF PORT RETURN LOSS vs. IF FREQUENCY PLO = -3dBm, 0dBm, +3dBm 15 20 5 VCC = 4.75V, 5.0V, 5.25V 10 15 25 0 MAX19995 toc39 fLO = 1610MHz LO SELECTED RETURN LOSS (dB) 10 LO SELECTED RETURN LOSS vs. LO FREQUENCY MAX19995 toc38 RF PORT RETURN LOSS (dB) 5 0 IF PORT RETURN LOSS (dB) fIF = 190MHz MAX19995 toc37 0 5 10 PLO = +3dBm PLO = 0dBm 15 20 25 PLO = -3dBm 20 1700 1900 2100 2300 2500 50 140 230 410 500 1400 1800 2000 2200 2400 LO FREQUENCY (MHz) LO UNSELECTED RETURN LOSS vs. LO FREQUENCY SUPPLY CURRENT vs. TEMPERATURE (TC) CONVERSION GAIN vs. RF FREQUENCY (VARIOUS VALUES OF L3 AND L6) 20 25 300 VCC = 5.0V 280 PLO = -3dBm, 0dBm, +3dBm 10 CONVERSION GAIN (dB) 15 320 260 1800 2000 2200 2400 9 8 0, 3.6nH, 6.8nH, 10nH 7 VCC = 4.75V 1600 MAX19995 toc42 VCC = 5.25V SUPPLY CURRENT (mA) 10 11 MAX19995 toc41 340 MAX19995 toc40 5 6 -35 -15 5 25 45 65 85 1700 1900 2100 2300 2500 LO FREQUENCY (MHz) TEMPERATURE (C) RF FREQUENCY (MHz) INPUT IP3 vs. RF FREQUENCY (VARIOUS VALUES OF L3 AND L6) 2RF-2LO RESPONSE vs. RF FREQUENCY (VARIOUS VALUES OF L3 AND L6) 3RF-3LO RESPONSE vs. RF FREQUENCY (VARIOUS VALUES OF L3 AND L6) 3.6nH 23 0 22 6.8nH 21 PRF = -5dBm 0 95 80 70 60 PRF = -5dBm 0 3.6nH 3RF-3LO RESPONSE (dBc) 24 90 MAX19995 toc44 PRF = -5dBm/TONE 2RF-2LO RESPONSE (dBc) 25 MAX19995 toc43 1400 1600 IF FREQUENCY (MHz) 30 85 75 6.8nH 10nH 65 10nH 6.8nH, 10nH 3.6nH 50 20 1700 1900 2100 2300 RF FREQUENCY (MHz) 12 320 RF FREQUENCY (MHz) 0 LO UNSELECTED RETURN LOSS (dB) 30 MAX19995 toc45 30 INPUT IP3 (dBm) MAX19995 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch 2500 55 1700 1900 2100 2300 RF FREQUENCY (MHz) 2500 1700 1900 2100 2300 RF FREQUENCY (MHz) ______________________________________________________________________________________ 2500 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch LO LEAKAGE AT IF PORT vs. LO FREQUENCY (VARIOUS VALUES OF L3 AND L6) CHANNEL ISOLATION (dB) 50 45 0 3.6nH 40 -30 -40 6.8nH 3.6nH -50 60 10nH MAX19995 toc48 0 RF-TO-IF ISOLATION (dB) 6.8nH 55 -20 RF-TO-IF ISOLATION vs. RF FREQUENCY (VARIOUS VALUES OF L3 AND L6) MAX19995 toc47 10nH LO LEAKAGE AT IF PORT (dBm) 60 MAX19995 toc46 CHANNEL ISOLATION vs. RF FREQUENCY (VARIOUS VALUES OF L3 AND L6) 50 6.8nH 40 30 35 10nH 3.6nH -60 30 1700 1900 2100 2300 RF FREQUENCY (MHz) 2500 0 20 1500 1700 1900 2100 LO FREQUENCY (MHz) 2300 1700 1900 2100 2300 2500 RF FREQUENCY (MHz) ______________________________________________________________________________________ 13 MAX19995 Typical Operating Characteristics (continued) (Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806, R2 = R5 = 2.32k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, optimized for the UMTS band, R1 = R4 = 681, R2 = R5 = 1.5k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.) CONVERSION GAIN vs. RF FREQUENCY TC = +85C 9 8 PLO = -3dBm, 0dBm, +3dBm 7 7 VCC = 4.75V, 5.0V, 5.25V 6 1700 2500 2500 1700 TC = +85C 26 25 PLO = -3dBm, 0dBm, +3dBm 22 21 20 2100 2300 2500 1900 2100 2300 VCC = 5.0V 22 TC = +25C TC = -30C 9 PLO = -3dBm, 0dBm, +3dBm RF FREQUENCY (MHz) 2500 11 10 9 VCC = 4.75V, 5.0V, 5.25V 8 6 6 2300 2500 7 7 6 2300 NOISE FIGURE vs. RF FREQUENCY 10 8 2100 12 NOISE FIGURE (dB) 9 1900 RF FREQUENCY (MHz) MAX19995 toc56 11 NOISE FIGURE (dB) 10 2100 1700 2500 NOISE FIGURE vs. RF FREQUENCY 12 MAX19995 toc55 TC = +85C 1900 23 RF FREQUENCY (MHz) NOISE FIGURE vs. RF FREQUENCY 12 1700 24 20 1700 RF FREQUENCY (MHz) 8 PRF = -5dBm/TONE VCC = 5.25V 21 20 11 2500 MAX19995 toc57 21 1900 2300 INPUT IP3 vs. RF FREQUENCY 24 23 2100 VCC = 4.75V TC = -30C 1700 1900 RF FREQUENCY (MHz) PRF = -5dBm/TONE 25 INPUT IP3 (dBm) 23 TC = +25C 26 MAX19995 toc52 24 22 2300 INPUT IP3 vs. RF FREQUENCY PRF = -5dBm/TONE 25 2100 RF FREQUENCY (MHz) INPUT IP3 vs. RF FREQUENCY 26 1900 MAX19995 toc54 2300 INPUT IP3 (dBm) 2100 MAX19995 toc53 1900 RF FREQUENCY (MHz) INPUT IP3 (dBm) 8 7 6 1700 14 9 TC = +25C 6 7 10 CONVERSION GAIN (dB) 10 CONVERSION GAIN (dB) CONVERSION GAIN (dB) 9 CONVERSION GAIN vs. RF FREQUENCY 11 MAX19995 toc50 MAX19995 toc49 TC = -30C 10 8 11 MAX19995 toc51 CONVERSION GAIN vs. RF FREQUENCY 11 NOISE FIGURE (dB) MAX19995 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch 1700 1900 2100 2300 RF FREQUENCY (MHz) 2500 1700 1900 2100 2300 RF FREQUENCY (MHz) ______________________________________________________________________________________ 2500 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch 70 60 2300 1700 2500 1700 2500 75 TC = +85C 75 PLO = -3dBm, 0dBm, +3dBm 2100 2300 INPUT P1dB vs. RF FREQUENCY 1900 2100 2300 65 2500 VCC = 5.25V 1700 1900 13 TC = +25C 12 2100 2300 2500 RF FREQUENCY (MHz) INPUT P1dB vs. RF FREQUENCY 16 MAX19995 toc65 15 INPUT P1dB (dBm) 14 MAX19995 toc60 75 INPUT P1dB vs. RF FREQUENCY 16 MAX19995 toc64 TC = +85C 15 VCC = 5.0V 85 RF FREQUENCY (MHz) RF FREQUENCY (MHz) 16 PRF = -5dBm 55 1700 2500 2500 VCC = 4.75V VCC = 5.25V 15 INPUT P1dB (dBm) 1900 2300 3RF-3LO RESPONSE vs. RF FREQUENCY 85 65 2100 95 55 55 1700 1900 RF FREQUENCY (MHz) PRF = -5dBm TC = -30C INPUT P1dB (dBm) 2300 3RF-3LO RESPONSE (dBc) 85 95 3RF-3LO RESPONSE (dBc) 3RF-3LO RESPONSE (dBc) MAX19995 toc61 PRF = -5dBm 65 50 2100 3RF-3LO RESPONSE vs. RF FREQUENCY 3RF-3LO RESPONSE vs. RF FREQUENCY TC = +25C 1900 RF FREQUENCY (MHz) RF FREQUENCY (MHz) 95 60 VCC = 4.75V, 5.0V, 5.25V PLO = -3dBm MAX19995 toc62 2100 70 MAX19995 toc63 50 50 1900 80 PLO = 0dBm TC = -30C TC = +25C 1700 PLO = +3dBm PRF = -5dBm 14 13 PLO = -3dBm, 0dBm, +3dBm 12 VCC = 5.0V MAX19995 toc66 60 2RF-2LO RESPONSE (dBc) 70 PRF = -5dBm 80 90 MAX19995 toc59 MAX19995 toc58 TC = +85C 80 90 2RF-2LO RESPONSE (dBc) 2RF-2LO RESPONSE (dBc) PRF = -5dBm 2RF-2LO RESPONSE vs. RF FREQUENCY 2RF-2LO RESPONSE vs. RF FREQUENCY 2RF-2LO RESPONSE vs. RF FREQUENCY 90 14 13 12 VCC = 4.75V TC = -30C 11 11 10 11 10 1700 1900 2100 2300 RF FREQUENCY (MHz) 2500 10 1700 1900 2100 2300 RF FREQUENCY (MHz) 2500 1700 1900 2100 2300 2500 RF FREQUENCY (MHz) ______________________________________________________________________________________ 15 MAX19995 Typical Operating Characteristics (continued) (Typical Application Circuit, optimized for the UMTS band, R1 = R4 = 681, R2 = R5 = 1.5k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, optimized for the UMTS band, R1 = R4 = 681, R2 = R5 = 1.5k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.) CHANNEL ISOLATION vs. RF FREQUENCY TC = -30C, +25C, +85C 35 1900 2100 2300 30 1700 2100 2300 1700 2500 2100 2300 LO LEAKAGE AT IF PORT vs. LO FREQUENCY LO LEAKAGE AT IF PORT vs. LO FREQUENCY TC = -30C, +25C -25 -30 -35 -40 -45 -20 VCC = 5.25V RF-TO-IF ISOLATION vs. RF FREQUENCY 1700 1900 2100 RF-TO-IF ISOLATION (dB) 45 40 35 30 2300 2100 2300 RF FREQUENCY (MHz) VCC = 4.75V 1500 PLO = -3dBm, 0dBm, +3dBm 45 2500 1700 1900 2100 2300 LO FREQUENCY (MHz) 40 35 RF-TO-IF ISOLATION vs. RF FREQUENCY 50 VCC = 4.75V, 5.0V, 5.25V 45 40 35 30 30 1900 -40 RF-TO-IF ISOLATION vs. RF FREQUENCY 50 MAX19995 toc73 TC = -30C, +25C, +85C -35 LO FREQUENCY (MHz) LO FREQUENCY (MHz) 50 VCC = 5.0V -30 -50 1500 2300 RF-TO-IF ISOLATION (dB) 2100 MAX19995 toc74 1900 -25 -45 -50 1700 2500 MAX19995 toc72 MAX19995 toc71 PLO = -3dBm, 0dBm, +3dBm LO LEAKAGE AT IF PORT (dBm) -40 -20 LO LEAKAGE AT IF PORT (dBm) MAX19995 toc70 -35 1700 1900 LO LEAKAGE AT IF PORT vs. LO FREQUENCY -50 16 1900 RF FREQUENCY (MHz) -30 1500 VCC = 4.75V, 5.0V, 5.25V 40 RF FREQUENCY (MHz) TC = +85C -45 45 RF FREQUENCY (MHz) -20 -25 2500 50 35 30 1700 MAX19995 toc69 MAX19995 toc68 PLO = -3dBm, 0dBm, +3dBm 40 35 30 LO LEAKAGE AT IF PORT (dBm) 45 55 MAX19995 toc75 45 50 60 CHANNEL ISOLATION (dB) 50 40 55 CHANNEL ISOLATION (dB) CHANNEL ISOLATION (dB) 55 CHANNEL ISOLATION vs. RF FREQUENCY CHANNEL ISOLATION vs. RF FREQUENCY 60 MAX19995 toc67 60 RF-TO-IF ISOLATION (dB) MAX19995 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch 1700 1900 2100 2300 RF FREQUENCY (MHz) 2500 1700 1900 2100 2300 RF FREQUENCY (MHz) ______________________________________________________________________________________ 2500 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch LO LEAKAGE AT RF PORT vs. LO FREQUENCY TC = -30C, +25C, +85C -60 -70 1600 1800 2000 2200 -60 2400 MAX19995 toc78 -60 -70 1400 1600 1800 2000 2200 2400 1400 1600 1800 2000 2200 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY -40 TC = +85C -50 -30 -40 PLO = -3dBm -50 1600 1800 2000 2200 1400 2400 -20 -30 -40 VCC = 4.75V, 5.0V, 5.25V -50 -60 -60 -60 1600 1800 2000 2200 1400 2400 1600 1800 2000 2200 LO FREQUENCY (MHz) LO FREQUENCY (MHz) LO FREQUENCY (MHz) LO SWITCH ISOLATION vs. LO FREQUENCY LO SWITCH ISOLATION vs. LO FREQUENCY LO SWITCH ISOLATION vs. LO FREQUENCY TC = +25C 50 TC = +85C 40 60 50 PLO = -3dBm, 0dBm, +3dBm 1700 1850 2000 LO FREQUENCY (MHz) 2150 2300 2400 60 50 VCC = 4.75V, 5.0V, 5.25V 40 40 1550 70 LO SWITCH ISOLATION (dB) 60 70 MAX19995 toc83 TC = -30C LO SWITCH ISOLATION (dB) MAX19995 toc82 70 2400 MAX19995 toc81 -20 -10 2LO LEAKAGE AT RF PORT (dBm) TC = +25C PLO = 0dBm, +3dBm 2LO LEAKAGE AT RF PORT (dBm) MAX19995 toc79 -30 -10 MAX19995 toc80 LO FREQUENCY (MHz) -20 1400 VCC = 4.75V, 5.0V, 5.25V -50 LO FREQUENCY (MHz) TC = -30C 1400 -40 LO FREQUENCY (MHz) -10 2LO LEAKAGE AT RF PORT (dBm) PLO = -3dBm, 0dBm, +3dBm -50 -70 1400 LO SWITCH ISOLATION (dB) -40 -30 MAX19995 toc84 -50 -30 -20 LO LEAKAGE AT RF PORT (dBm) -40 LO LEAKAGE AT RF PORT vs. LO FREQUENCY MAX19995 toc77 -30 -20 LO LEAKAGE AT RF PORT (dBm) MAX19995 toc76 LO LEAKAGE AT RF PORT (dBm) -20 LO LEAKAGE AT RF PORT vs. LO FREQUENCY 1400 1550 1700 1850 2000 LO FREQUENCY (MHz) 2150 2300 1400 1550 1700 1850 2000 2150 2300 LO FREQUENCY (MHz) ______________________________________________________________________________________ 17 MAX19995 Typical Operating Characteristics (continued) (Typical Application Circuit, optimized for the UMTS band, R1 = R4 = 681, R2 = R5 = 1.5k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, optimized for the UMTS band, R1 = R4 = 681, R2 = R5 = 1.5k, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.) RF PORT RETURN LOSS vs. RF FREQUENCY 30 40 VCC = 4.75V, 5.0V, 5.25V 10 15 MAX19995 toc87 LO SELECTED RETURN LOSS (dB) 20 fLO = 1610MHz 5 0 MAX19995 toc86 PLO = -3dBm, 0dBm, +3dBm 0 IF PORT RETURN LOSS (dB) fIF = 190MHz 10 LO SELECTED RETURN LOSS vs. LO FREQUENCY IF PORT RETURN LOSS vs. IF FREQUENCY MAX19995 toc85 0 RF PORT RETURN LOSS (dB) 5 10 PLO = +3dBm PLO = 0dBm 15 20 25 PLO = -3dBm 50 30 20 1900 2100 2300 2500 50 140 230 RF FREQUENCY (MHz) 320 410 400 VCC = 5.25V SUPPLY CURRENT (mA) 5 1800 2000 SUPPLY CURRENT vs. TEMPERATURE (TC) MAX19995 toc88 0 10 15 20 380 360 VCC = 5.0V 340 PLO = -3dBm, 0dBm, +3dBm VCC = 4.75V 320 30 1400 1600 1800 2000 LO FREQUENCY (MHz) 18 1600 LO FREQUENCY (MHz) LO UNSELECTED RETURN LOSS vs. LO FREQUENCY 25 1400 500 IF FREQUENCY (MHz) MAX19995 toc89 1700 LO UNSELECTED RETURN LOSS (dB) MAX19995 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch 2200 2400 -35 -15 5 25 45 65 85 TEMPERATURE (C) ______________________________________________________________________________________ 2200 2400 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch 6 8 7 PLO = -3dBm, 0dBm, +3dBm 2100 2300 1700 2500 INPUT IP3 vs. RF FREQUENCY 2100 2300 1700 2500 MAX19995 toc93 TC = +85C VCC = 3.3V PRF = -5dBm/TONE 22 16 VCC = 3.3V PRF = -5dBm/TONE 18 16 PLO = -3dBm, 0dBm, +3dBm VCC = 3.6V 20 18 16 VCC = 3.0V 12 12 2100 2300 2500 1700 RF FREQUENCY (MHz) 10 9 12 11 10 9 6 2300 RF FREQUENCY (MHz) 2500 2500 12 VCC = 3.0V 11 10 9 VCC = 3.3V, 3.6V 7 6 6 2100 2300 13 8 PLO = -3dBm, 0dBm, +3dBm 7 TC = -30C 2100 NOISE FIGURE vs. RF FREQUENCY VCC = 3.3V 8 TC = +25C 1900 RF FREQUENCY (MHz) NOISE FIGURE (dB) 11 8 1700 2500 NOISE FIGURE vs. RF FREQUENCY NOISE FIGURE (dB) NOISE FIGURE (dB) TC = +85C 2300 13 MAX19995 toc96 12 2100 RF FREQUENCY (MHz) NOISE FIGURE vs. RF FREQUENCY VCC = 3.3V 1900 MAX19995 toc97 1900 1900 VCC = 3.3V PRF = -5dBm/TONE MAX19995 toc98 12 1700 2500 14 14 TC = +25C 7 2300 VCC = 3.3V 14 13 MAX19995 toc92 22 TC = -30C 1700 2100 INPUT IP3 vs. RF FREQUENCY 20 INPUT IP3 (dBm) 18 1900 RF FREQUENCY (MHz) INPUT IP3 vs. RF FREQUENCY 22 INPUT IP3 (dBm) VCC = 3.0V RF FREQUENCY (MHz) RF FREQUENCY (MHz) 20 1900 INPUT IP3 (dBm) 1900 MAX19995 toc94 1700 7 5 5 5 8 6 6 TC = +25C VCC = 3.3V 9 MAX19995 toc95 TC = +85C 9 VCC = 3.6V 10 CONVERSION GAIN (dB) 8 11 MAX19995 toc91 VCC = 3.3V 10 CONVERSION GAIN (dB) CONVERSION GAIN (dB) 9 7 11 MAX19995 toc90 VCC = 3.3V TC = -30C 10 CONVERSION GAIN vs. RF FREQUENCY CONVERSION GAIN vs. RF FREQUENCY CONVERSION GAIN vs. RF FREQUENCY 11 1700 1900 2100 2300 RF FREQUENCY (MHz) 2500 1700 1900 2100 2300 2500 RF FREQUENCY (MHz) ______________________________________________________________________________________ 19 MAX19995 Typical Operating Characteristics (continued) (Typical Application Circuit, R1 = R4 = 909, R2 = R5 = 2.49k, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, R1 = R4 = 909, R2 = R5 = 2.49k, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.) 50 TC = +25C 40 2300 2500 RF FREQUENCY (MHz) 2100 60 50 TC = +25C TC = -30C 3RF-3LO RESPONSE (dBc) PRF = -5dBm VCC = 3.3V 70 30 2300 2500 1700 60 2300 50 PLO = -3dBm, 0dBm, +3dBm 40 2500 VCC = 3.6V 1900 2100 2300 12 VCC = 3.3V 11 8 TC = +25C 6 5 1900 2100 2300 RF FREQUENCY (MHz) 2500 1900 2100 2300 2500 RF FREQUENCY (MHz) INPUT P1dB vs. RF FREQUENCY 10 9 8 PLO = -3dBm, 0dBm, +3dBm 12 VCC = 3.3V 11 VCC = 3.6V 10 9 8 7 7 6 6 VCC = 3.0V 5 5 1700 1700 2500 INPUT P1dB (dBm) INPUT P1dB (dBm) 9 7 VCC = 3.3V 40 INPUT P1dB vs. RF FREQUENCY 10 TC = -30C 50 30 1700 MAX19995 toc105 VCC = 3.3V TC = +85C 2500 PRF = -5dBm 60 RF FREQUENCY (MHz) 11 2300 VCC = 3.0V INPUT P1dB vs. RF FREQUENCY 12 2100 3RF-3LO RESPONSE vs. RF FREQUENCY MAX19995 toc106 2100 1900 70 30 1900 VCC = 3.0V RF FREQUENCY (MHz) PRF = -5dBm VCC = 3.3V RF FREQUENCY (MHz) 20 1900 3RF-3LO RESPONSE vs. RF FREQUENCY MAX19995 toc102 3RF-3LO RESPONSE (dBc) TC = +85C 1700 50 RF FREQUENCY (MHz) 3RF-3LO RESPONSE vs. RF FREQUENCY 70 40 60 40 1700 3RF-3LO RESPONSE (dBc) 2100 MAX19995 toc103 1900 VCC = 3.3V PLO = 0dBm, +3dBm 40 1700 70 MAX19995 toc104 TC = -30C 60 PRF = -5dBm VCC = 3.6V MAX19995 toc107 50 PLO = -3dBm 70 80 2RF-2LO RESPONSE (dBc) 60 PRF = -5dBm VCC = 3.3V 2RF-2LO RESPONSE vs. RF FREQUENCY MAX19995 toc100 70 2RF-2LO RESPONSE (dBc) 2RF-2LO RESPONSE (dBc) TC = +85C 2RF-2LO RESPONSE vs. RF FREQUENCY 80 MAX19995 toc99 PRF = -5dBm VCC = 3.3V MAX19995 toc101 2RF-2LO RESPONSE vs. RF FREQUENCY 80 INPUT P1dB (dBm) MAX19995 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch 1700 1900 2100 2300 RF FREQUENCY (MHz) 2500 1700 1900 2100 2300 RF FREQUENCY (MHz) ______________________________________________________________________________________ 2500 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch TC = -30C, +25C, +85C 1900 2100 2300 1900 2300 MAX19995 toc110 1700 2500 1900 2100 2300 RF FREQUENCY (MHz) LO LEAKAGE AT IF PORT vs. LO FREQUENCY LO LEAKAGE AT IF PORT vs. LO FREQUENCY LO LEAKAGE AT IF PORT vs. LO FREQUENCY -40 TC = +85C -45 -50 TC = +25C VCC = 3.3V -35 -40 PLO = -3dBm -45 -50 PLO = 0dBm -55 TC = -30C -30 2300 1700 LO FREQUENCY (MHz) 1900 2100 2300 45 40 35 VCC = 3.3V 55 PLO = -3dBm, 0dBm, +3dBm 50 30 45 40 2300 RF FREQUENCY (MHz) 2500 1900 2100 2300 RF-TO-IF ISOLATION vs. RF FREQUENCY 60 55 VCC = 3.0V, 3.3V, 3.6V 50 45 40 35 30 2100 1700 LO FREQUENCY (MHz) 35 1900 VCC = 3.3V 1500 RF-TO-IF ISOLATION (dB) TC = +85C 50 VCC = 3.0V RF-TO-IF ISOLATION vs. RF FREQUENCY 60 RF-TO-IF ISOLATION (dB) TC = +25C MAX19995 toc114 TC = -30C 55 -50 LO FREQUENCY (MHz) RF-TO-IF ISOLATION vs. RF FREQUENCY VCC = 3.3V -45 -60 1500 MAX19995 toc115 2100 -40 -55 -60 1900 VCC = 3.6V -35 PLO = +3dBm -60 1700 2500 MAX19995 toc113 -30 LO LEAKAGE AT IF PORT (dBm) MAX19995 toc111 -35 -55 RF-TO-IF ISOLATION (dB) 2100 RF FREQUENCY (MHz) VCC = 3.3V 1700 VCC = 3.0V, 3.3V, 3.6V 40 RF FREQUENCY (MHz) -30 1500 45 30 1700 2500 LO LEAKAGE AT IF PORT (dBm) 1700 50 35 30 30 60 MAX19995 toc109 PLO = -3dBm, 0dBm, +3dBm 40 35 35 LO LEAKAGE AT IF PORT (dBm) 45 55 MAX19995 toc116 40 50 60 CHANNEL ISOLATION (dB) 45 VCC = 3.3V 55 MAX19995 toc112 CHANNEL ISOLATION (dB) 50 60 CHANNEL ISOLATION (dB) MAX19995 toc108 VCC = 3.3V 55 CHANNEL ISOLATION vs. RF FREQUENCY CHANNEL ISOLATION vs. RF FREQUENCY CHANNEL ISOLATION vs. RF FREQUENCY 60 30 1700 1900 2100 2300 RF FREQUENCY (MHz) 2500 1700 1900 2100 2300 2500 RF FREQUENCY (MHz) ______________________________________________________________________________________ 21 MAX19995 Typical Operating Characteristics (continued) (Typical Application Circuit, R1 = R4 = 909, R2 = R5 = 2.49k, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.) Typical Operating Characteristics (continued) (Typical Application Circuit, R1 = R4 = 909, R2 = R5 = 2.49k, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.) TC = -30C -40 -50 TC = +25C -60 -30 -40 -50 PLO = -3dBm, 0dBm, +3dBm -60 -20 VCC = 3.6V -30 -40 -50 VCC = 3.0V -60 VCC = 3.3V TC = +85C -70 -70 1600 1800 2000 2200 1800 2000 2200 2400 1400 2000 2200 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY -50 -60 PLO = -3dBm, 0dBm, +3dBm -20 -30 -40 -50 -10 VCC = 3.6V 2LO LEAKAGE AT RF PORT (dBm) -40 VCC = 3.3V 2LO LEAKAGE AT RF PORT (dBm) -30 -10 MAX19995 toc121 2LO LEAKAGE AT RF PORT vs. LO FREQUENCY TC = -30C, +25C, +85C 1600 1800 2000 2200 2400 -20 VCC = 3.3V -30 -40 VCC = 3.0V -50 1400 1600 1800 2000 2200 1400 2400 1600 1800 2000 2200 LO FREQUENCY (MHz) LO SWITCH ISOLATION vs. LO FREQUENCY LO SWITCH ISOLATION vs. LO FREQUENCY LO SWITCH ISOLATION vs. LO FREQUENCY 60 50 TC = +85C 60 50 40 1850 2000 LO FREQUENCY (MHz) 50 40 40 1700 VCC = 3.0V, 3.3V, 3.6V 60 PLO = -3dBm, 0dBm, +3dBm TC = +25C 1550 70 2400 MAX19995 toc125 VCC = 3.3V LO SWITCH ISOLATION (dB) TC = -30C 70 LO SWITCH ISOLATION (dB) VCC = 3.3V MAX19995 toc124 LO FREQUENCY (MHz) MAX19995 toc123 LO FREQUENCY (MHz) 70 2400 -60 -60 1400 1800 LO FREQUENCY (MHz) -20 1400 1600 LO FREQUENCY (MHz) VCC = 3.3V 22 1600 LO FREQUENCY (MHz) -10 2LO LEAKAGE AT RF PORT (dBm) -70 1400 2400 MAX19995 toc120 1400 MAX19995 toc119 VCC = 3.3V MAX19995 toc122 -30 -20 LO LEAKAGE AT RF PORT (dBm) LO LEAKAGE AT RF PORT (dBm) VCC = 3.3V LO LEAKAGE AT RF PORT (dBm) MAX19995 toc117 -20 LO LEAKAGE AT RF PORT vs. LO FREQUENCY MAX19995 toc118 LO LEAKAGE AT RF PORT vs. LO FREQUENCY LO LEAKAGE AT RF PORT vs. LO FREQUENCY LO SWITCH ISOLATION (dB) MAX19995 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch 2150 2300 1400 1550 1700 1850 2000 LO FREQUENCY (MHz) 2150 2300 1400 1550 1700 1850 2000 LO FREQUENCY (MHz) ______________________________________________________________________________________ 2150 2300 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch 20 30 40 VCC = 3.0V, 3.3V, 3.6V 10 15 VCC = 3.3V 5 10 MAX19995 toc128 5 0 LO SELECTED RETURN LOSS (dB) PLO = -3dBm, 0dBm, +3dBm fLO = 1610MHz MAX19995 toc86 IF PORT RETURN LOSS (dB) 10 0 MAX19995 toc126 fIF = 190MHz VCC = 3.3V PLO = 0dBm PLO = +3dBm 15 20 25 PLO = -3dBm 30 20 1700 1900 2100 2300 50 2500 140 230 320 1400 500 410 1600 VCC = 3.6V SUPPLY CURRENT (mA) 5 260 MAX19995 toc129 VCC = 3.3V 2000 2200 2400 SUPPLY CURRENT vs. TEMPERATURE (TC) LO UNSELECTED RETURN LOSS vs. LO FREQUENCY 0 1800 LO FREQUENCY (MHz) IF FREQUENCY (MHz) RF FREQUENCY (MHz) 10 15 20 MAX19995 toc130 50 LO UNSELECTED RETURN LOSS (dB) RF PORT RETURN LOSS (dB) 0 LO SELECTED RETURN LOSS vs. LO FREQUENCY IF PORT RETURN LOSS vs. IF FREQUENCY RF PORT RETURN LOSS vs. RF FREQUENCY VCC = 3.3V 240 220 200 PLO = -3dBm, 0dBm, +3dBm 25 VCC = 3.0V 180 30 1400 1600 1800 2000 LO FREQUENCY (MHz) 2200 2400 -35 -15 5 25 45 65 85 TEMPERATURE (C) ______________________________________________________________________________________ 23 MAX19995 Typical Operating Characteristics (continued) (Typical Application Circuit, R1 = R4 = 909, R2 = R5 = 2.49k, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is low-side injected for a 190MHz IF, TC = +25C, unless otherwise noted.) MAX19995 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch Pin Description PIN NAME 1 RFMAIN 2 TAPMAIN 3, 5, 7, 12, 20, 22, 24, 25, 26, 34 GND Ground 4, 6, 10, 16, 21, 30, 36 VCC Power Supply. Bypass to GND with capacitors shown in the Typical Application Circuit as close as possible to the pin. 8 TAPDIV Diversity Channel Balun Center Tap. Bypass to GND with 39pF and 0.033F capacitors as close as possible to the pin with the smaller value capacitor closer to the part. 9 RFDIV 11 IFD_SET IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the diversity IF amplifier. 13, 14 IFD+, IFD- Diversity Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit). 15 IND_EXTD Diversity External Inductor Connection. Connect this pin to ground. For improved RF-to-IF and LO-to-IF isolation, connect a low-ESR 10nH inductor from this pin to ground (see the Typical Operating Characteristics for typical performance vs. inductor value). 17 LO_ADJ_D LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the diversity LO amplifier. 18, 28 N.C. No Connection. Not internally connected. 19 LO1 Local Oscillator 1 Input. This input is internally matched to 50. Requires an input DC-blocking capacitor. 23 LOSEL 27 LO2 29 LO_ADJ_M LO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the main LO amplifier. 31 IND_EXTM Main External Inductor Connection. Connect this pin to ground. For improved RF-to-IF and LO-to-IF isolation, connect a low-ESR 10nH inductor from this pin to ground (see the Typical Operating Characteristics for typical performance vs. Inductor value). 32, 33 IFM-, IFM+ Main Mixer Differential IF Output. Connect pullup inductors from each of these pins to VCC (see the Typical Application Circuit). 35 IFM_SET IF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for the main IF amplifier. -- EP Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple via grounds are also required to achieve the noted RF performance. 24 FUNCTION Main Channel RF Input. Internally matched to 50. Requires an input DC-blocking capacitor. Main Channel Balun Center Tap. Bypass to GND with 39pF and 0.033F capacitors as close as possible to the pin with the smaller value capacitor closer to the part. Diversity Channel RF Input. Internally matched to 50. Requires an input DC-blocking capacitor. Local Oscillator Select. Set this pin to high to select LO1. Set to low to select LO2. Local Oscillator 2 Input. This input is internally matched to 50. Requires an input DC-blocking capacitor. ______________________________________________________________________________________ Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch The MAX19995 is a dual-channel downconverter designed to provide 9dB of conversion gain, +24.8dBm input IP3, +13.3dBm 1dB input compression point, and a noise figure of 9dB. In addition to its high-linearity performance, the MAX19995 achieves a high level of component integration. The device integrates two double-balanced mixers for two-channel downconversion. Both the main and diversity channels include a balun and matching circuitry to allow 50 single-ended interfaces to the RF ports and the two LO ports. An integrated single-pole, double-throw (SPDT) switch provides 50ns switching time between the two LO inputs, with 56dB of LO-to-LO isolation and -31dBm of LO leakage at the RF port. Furthermore, the integrated LO buffers provide a high drive level to each mixer core, reducing the LO drive required at the MAX19995's inputs to a range of -3dBm to +3dBm. The IF ports for both channels incorporate differential outputs for downconversion, which is ideal for providing enhanced 2RF-2LO performance. Specifications are guaranteed over broad frequency ranges to allow for use in WCDMA/LTE, DCS1800/ PCS1900 GSM/EDGE, and cdma2000 base stations. The MAX19995 is specified to operate over an RF input range of 1700MHz to 2200MHz, an LO range of 1400MHz to 2000MHz, and an IF range of 50MHz to 500MHz. The external IF components set the lower frequency range. Operation beyond these ranges is possible; see the Typical Operating Characteristics for additional information. Although this device is optimized for low-side LO injection applications, it can operate in high-side LO injection modes as well. However, performance degrades as fLO continues to increase. For increased high-side LO performance, refer to the MAX19995A data sheet. RF Port and Balun The RF input ports of both the main and diversity channels are internally matched to 50, requiring no external matching components. A DC-blocking capacitor is required as the input is internally DC shorted to ground through the on-chip balun. The RF port input return loss is typically better than 16dB over the RF frequency range of 1700MHz to 2200MHz. LO Inputs, Buffer, and Balun The MAX19995 is optimized for a 1400MHz to 2000MHz LO frequency range. As an added feature, the MAX19995 includes an internal LO SPDT switch for use in frequency-hopping applications. The switch selects one of the two single-ended LO ports, allowing the external oscillator to settle on a particular frequency before it is switched in. LO switching time is typically 50ns, which is more than adequate for typical GSM applications. If frequency hopping is not employed, simply set the switch to either of the LO inputs. The switch is controlled by a digital input (LOSEL), where logic-high selects LO1 and logic-low selects LO2. LO1 and LO2 inputs are internally matched to 50, requiring only 39pF DC-blocking capacitors. If LOSEL is connected directly to a logic source, then voltage MUST be applied to VCC before digital logic is applied to LOSEL to avoid damaging the part. Alternatively, a 1k resistor can be placed in series at the LOSEL to limit the input current in applications where LOSEL is applied before VCC. The main and diversity channels incorporate a twostage LO buffer that allows for a wide-input power range for the LO drive. The on-chip low-loss baluns, along with LO buffers, drive the double-balanced mixers. All interfacing and matching components from the LO inputs to the IF outputs are integrated on chip. High-Linearity Mixer The core of the MAX19995 dual-channel downconverter consists of two double-balanced, high-performance passive mixers. Exceptional linearity is provided by the large LO swing from the on-chip LO buffers. When combined with the integrated IF amplifiers, the cascaded IIP3, 2RF-2LO rejection, and noise figure performance are typically +24.8dBm, 79dBc, and 9dB, respectively. ______________________________________________________________________________________ 25 MAX19995 Detailed Description MAX19995 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch Differential IF IND_EXT_ Inductors The MAX19995 has an IF frequency range of 50MHz to 500MHz, where the low-end/high-end frequency depends on the frequency response of the external IF components. Note that these differential ports are ideal for providing enhanced IIP2 performance. Singleended IF applications require a 4:1 (impedance ratio) balun to transform the 200 differential IF impedance to a 50 single-ended system. After the balun, the return loss is typically 12.5dB. The user can use a differential IF amplifier on the mixer IF ports, but a DC block is required on both IFD+/IFD- and IFM+/IFMports to keep external DC from entering the IF ports of the mixer. For applications requiring optimum RF-to-IF and LO-toIF isolation, connect low-ESR inductors from IND_EXT_ (pins 15 and 31) to ground. When improved isolation is not required, connect IND_EXT_ to ground using a 0 resistance. See the Typical Operating Characteristics to evaluate the isolation vs. inductor value tradeoff. Applications Information Input and Output Matching The RF and LO inputs are internally matched to 50. No matching components are required. The RF port input return loss is typically better than 16dB over the RF frequency range of 1700MHz to 2200MHz and return loss at the LO ports are typically better than 16dB over the entire LO range. RF and LO inputs require only DC-blocking capacitors for interfacing. The IF output impedance is 200 (differential). For evaluation, an external low-loss 4:1 (impedance ratio) balun transforms this impedance to a 50 single-ended output (see the Typical Application Circuit). Reduced-Power Mode Each channel of the MAX19995 has two pins (LO_ADJ_ _, IF_ _SET) that allow external resistors to set the internal bias currents. Nominal values for these resistors are given in Table 1. Larger value resistors can be used to reduce power dissipation at the expense of some performance loss. See the Typical Operating Characteristics to evaluate the biasing vs. performance tradeoff. If 1% resistors are not readily available, 5% resistors may be substituted. Significant reductions in power consumption can also be realized by operating the mixer with an optional supply voltage of +3.3V. Doing so reduces the overall power consumption by up to 62%. See the +3.3V Supply AC Electrical Characteristics and the relevant +3.3V curves in the Typical Operating Characteristics section. 26 Layout Considerations A properly designed PCB is an essential part of any RF/microwave circuit. Keep RF signal lines as short as possible to reduce losses, radiation, and inductance. The load impedance presented to the mixer must be such that any capacitance from both IF- and IF+ to ground does not exceed several picofarads. For the best performance, route the ground pin traces directly to the exposed pad under the package. The PCB exposed pad MUST be connected to the ground plane of the PCB. It is suggested that multiple vias be used to connect this pad to the lower-level ground planes. This method provides a good RF/thermal-conduction path for the device. Solder the exposed pad on the bottom of the device package to the PCB. The MAX19995 evaluation kit can be used as a reference for board layout. Gerber files are available upon request at www.maxim-ic.com. Power-Supply Bypassing Proper voltage-supply bypassing is essential for highfrequency circuit stability. Bypass each VCC pin and TAPMAIN/TAPDIV with the capacitors shown in the Typical Application Circuit (see Table 1 for component values). Place the TAPMAIN/TAPDIV bypass capacitors to ground within 100 mils of the pin. Exposed Pad RF/Thermal Considerations The exposed pad (EP) of the MAX19995's 36-pin thin QFN-EP package provides a low thermal-resistance path to the die. It is important that the PCB on which the MAX19995 is mounted be designed to conduct heat from the EP. In addition, provide the EP with a lowinductance path to electrical ground. The EP MUST be soldered to a ground plane on the PCB, either directly or through an array of plated via holes. ______________________________________________________________________________________ Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch MAX19995 Table 1. Component Values COMPONENT VALUE C1, C2, C7, C8, C14, C16 39pF C3, C6 0.033F C4, C5 -- C9, C13, C15, C17, C18 0.01F DESCRIPTION Microwave capacitors (0402) Microwave capacitors (0603) Not used Microwave capacitors (0402) C10, C11, C12, C19, C20, C21 150pF Microwave capacitors (0603) L1, L2, L4, L5 330nH Wire-wound high-Q inductors (0805) L3, L6 10nH Wire-wound high-Q inductors (0603). Smaller values can be used at the expense of some performance loss (see the Typical Operating Characteristics). 806 1% resistors (0402). Used for DCS/PCS band, VCC = +5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. 681 1% resistors (0402). Used for UMTS band, VCC = +5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. 909 1% resistors (0402). Used for VCC = +3.3V applications. R1, R4 2.32k 1% resistors (0402). Used for DCS/PCS band, VCC = +5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. 1.5k 1% resistors (0402). Used for UMTS band, VCC = +5.0V applications. Larger values can be used to reduce power at the expense of some performance loss. 2.49k 1% resistors (0402). Used for VCC = +3.3V applications. R2, R5 R3, R6 0 T1, T2 4:1 0 resistors (1206) Transformers (200:50) U1 -- MAX19995 IC ______________________________________________________________________________________ 27 Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch MAX19995 Typical Application Circuit C19 T1 L1 VCC IF MAIN OUTPUT C21 R3 L2 4:1 R1 C20 VCC RF MAIN INPUT TAPMAIN C3 C2 GND VCC VCC C4 GND VCC VCC C5 GND C6 C7 TAPDIV RFDIV RF DIV INPUT C17 28 N.C. LO_ADJ_M R2 29 30 31 VCC IND_EXTM IFM32 IFM+ 33 GND 34 IFM_SET 35 + RFMAIN 36 VCC C18 C1 VCC L3 C16 1 27 MAX19995 2 26 3 25 4 24 5 23 6 22 7 21 EXPOSED PAD 8 20 9 19 LO2 LO2 GND GND GND LOSEL LO SELECT GND VCC VCC C15 GND LO1 LO1 C14 18 N.C. 17 LO_ADJ_D VCC 16 15 14 IFD- 13 IFD+ 12 GND 11 R4 IND_EXTD C9 IFD_SET VCC VCC 10 C8 R5 VCC C13 L6 C11 T2 L5 VCC C12 R6 IF DIV OUTPUT L4 4:1 C10 28 ______________________________________________________________________________________ Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch 28 N.C. 29 LO_ADJ_M 30 VCC 31 IND_EXTM 32 IFM- 33 IFM+ 34 GND 35 IFM_SET 36 VCC TOP VIEW + RFMAIN 1 MAX19995 27 LO2 26 GND TAPMAIN 2 GND 3 25 GND VCC 4 24 GND GND 5 23 LOSEL VCC 6 22 GND GND 7 21 VCC 20 GND 19 LO1 16 17 18 VCC LO_ADJ_D N.C. 14 IFD- 15 13 IFD+ IND_EXTD 12 GND 11 9 IFD_SET RFDIV 10 8 VCC TAPDIV EXPOSED PAD THIN QFN (EXPOSED PAD) 6mm x 6mm EXPOSED PAD ON THE BOTTOM OF THE PACKAGE Chip Information PROCESS: SiGe BiCMOS Package Information For the latest package outline information and land patterns, go to www.maxim-ic.com/packages. PACKAGE TYPE PACKAGE CODE DOCUMENT NO. 36 Thin QFN-EP T3666+2 21-0141 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 29 (c) 2008 Maxim Integrated Products is a registered trademark of Maxim Integrated Products, Inc. MAX19995 Pin Configuration/Functional Diagram Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Maxim Integrated: MAX19995ETX+ MAX19995ETX+T