Applications2SK3132 - Toshiba

2SK3132

2006-11-06

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK3132

Chopper Regulator DC−DC Converter and Motor Drive

Applications

z Low drain−source ON resistance : RDS (ON) = 0.07 Ω (typ.)

z High forward transfer admittance : |Yfs| = 33 S (typ.)

z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)

z Enhancement mode : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain−source voltage VDSS 500 V

Drain−gate voltage (RGS = 20 kΩ) VDGR 500 V

Gate−source voltage VGSS ±30 V

DC (Note 1) ID 50 A

DCDrain current

Pulse (Note 1) IDP 200 A

Drain power dissipation (Tc = 25°C) PD 250 W

Single pulse avalanche energy

(Note 2)

EAS 525 mJ

Avalanche current IAR 50 A

Repetitive avalanche energy (Note 3) EAR 25 mJ

Channel temperature Tch 150 °C

Storage temperature range Tstg −55~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch−c) 0.5 °C / W

Thermal resistance, channel to

ambient Rth (ch−a) 35.7 °C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: VDD = 90 V, Tch = 25°C (initial), L = 357 μH, RG = 25 Ω, IAR = 50 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Unit: mm

JEDEC —

JEITA —

TOSHIBA 2-21F1B

Weight: 9.75 g (typ.)

2SK3132

2006-11-06

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±25 V, VDS = 0 V — — ±10 μA

Gate−source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 — — V

Drain cut−off current IDSS VDS = 500 V, VGS = 0 V — — 100 μA

Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 — — V

Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.4 — 3.4 V

Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 25 A — 0.07 0.095 Ω

Forward transfer admittance |Yfs| VDS = 10 V, ID = 25 A 15 33 — S

Input capacitance Ciss — 11000 —

Reverse transfer capacitance Crss — 2100 —

Output capacitance Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

— 4200 —

Rise time tr — 105 —

Turn−on time ton — 160 —

Fall time tf — 65 —

Switching time

Turn−off time toff — 245 —

Total gate charge (Gate−source

plus gate−drain) Qg — 280 —

Gate−source charge Qgs — 150 —

Gate−drain (“miller”) charge Qgd

VDD ≈ 400 V, VGS = 10 V, ID = 50 A

— 130 —

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

(Note 1)

IDR

— — — 50 A

Pulse drain reverse current

(Note 1)

IDRP

— — — 200 A

Forward voltage (diode) VDSF IDR = 25 A, VGS = 0 V — — −1.7 V

Reverse recovery time trr — 600 — ns

Reverse recovery charge Qrr

IDR = 50 A, VGS = 0 V

dIDR / dt = 100 A / μs — 12 — μC

Marking

2SK3132

TOSHIBA

JAPAN

Lot No.

line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

2SK3132

2006-11-06

2SK3132

2006-11-06

2SK3132

2006-11-06

RG = 25 Ω

DD = 90 V, L = 357 μH ⎟

⎠

⎞

⎜

⎝

⎛

−

⋅⋅⋅=

DDVDSS

VDSS

AS VB

2SK3132

2006-11-06

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.

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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

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