June 2003
2003 Fairchild Semiconductor Corporation BSS123 Rev G(W)
BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
Features
• 0.17 A, 100 V. RDS(ON) = 6Ω @ VGS = 10 V
RDS(ON) = 10Ω @ VGS = 4.5 V
• High density cell design for extremely low RDS(ON)
• Rugged and Reliable
• Compact industry standard SOT-23 surface mount
package
G
D
S
SOT-23
D
S
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 100 V
VGSS Gate-Source Voltage ±20 V
IDDrain Current – Continuous (Note 1) 0.17 A
– Pulsed 0.68
Maximum Power Dissipation (Note 1) 0.36 WPDDerate Above 25°C2.8 mW/°C
TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C
TLMaximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds 300
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 350 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
SA BSS123 7’’ 8mm 3000 units
BSS123
BSS123 Rev G(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA100 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA,Referenced to 25°C97 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 100 V, VGS = 0 V 1µA
VDS = 100 V,VGS = 0 V TJ = 125°C60 µA
VDS = 20 V, VGS = 0 V 10 nA
IGSS Gate–Body Leakage. VGS = ±20 V, VDS = 0 V ±50 nA
On Characteristics (Note 2)
VGS(th)Gate Threshold Voltage VDS = VGS, ID = 1 mA 0.8 1.7 2V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient ID = 1 mA,Referenced to 25°C–2.7 mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = 10 V, ID = 0.17 A
VGS = 4.5 V, ID = 0.17 A
V
GS
= 10 V, I
D
= 0.17 A, T
J
= 125°C
1.2
1.3
2.2
6
10
12
Ω
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 0.68 A
gFS Forward Transconductance VDS = 10V, ID = 0.17 A 0.08 0.8 S
Dynamic Characteristics
Ciss Input Capacitance 73 pF
Coss Output Capacitance 7pF
Crss Reverse Transfer Capacitance
VDS = 25 V, V GS = 0 V,
f = 1.0 MHz 3.4 pF
RGGate Resistance VGS = 15 mV, f = 1.0 MHz 2.2 Ω
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 1.7 3.4 ns
trTurn–On Rise Time 9 18 ns
td(off) Turn–Off Delay Time 17 31 ns
tfTurn–Off Fall Time
VDD = 30 V, ID = 0.28 A,
VGS = 10 V, RGEN = 6 Ω
2.4 5ns
QgTotal Gate Charge 1.8 2.5 nC
Qgs Gate–Source Charge 0.2 nC
Qgd Gate–Drain Charge
VDS = 30 V, ID = 0.22 A,
VGS = 10 V
0.3 nC
Drain–Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain–Source Diode Forward Current 0.17 A
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = 0.34 A(Note 2) 0.8 1.3 V
trr Diode Reverse Recovery Time 11 nS
Qrr Diode Reverse Recovery Charge IF = 0.17 A,
diF/dt = 100 A/µs 3nC
NOTE:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 350°C/W when mounted on a
minimum pad..
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
BSS123
BSS123 Rev G(W)
Typical Characteristics
0
0.2
0.4
0.6
0.8
1
0 1 2 3 4 5
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS = 10V
2.0V
3.0V
2.5V
6.0V
4.5V
3.5V
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
00.2 0.4 0.6 0.8 1
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 2.5V
4.5V
3.0V 3.5V 6.0V 10V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = 170mA
VGS = 10V
1
1.4
1.8
2.2
2.6
3
3.4
0 2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON)
, ON-RESISTANCE (OHM)
ID = 0.08A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
0.2
0.4
0.6
0.8
1
11.5 22.5 3
VGS, GATE TO SOURCE VOLTAGE (V)
ID
, DRAIN CURRENT (A)
TA = 125oC
25oC
-55oC
VDS = 10V
0.0001
0.001
0.01
0.1
1
00.2 0.4 0.6 0.8 11.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
TA = 125oC
25oC
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
BSS123
BSS123 Rev G(W)
Typical Characteristics
0
2
4
6
8
10
00.4 0.8 1.2 1.6 2
Qg, GATE CHARGE (nC)
VGS, GATE-SOURCE VOLTAGE (V)
ID = 0.17A VDS = 30V 50V
70V
0
20
40
60
80
100
0 20 40 60 80 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
COSS
CRSS
f = 1 MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.001
0.01
0.1
1
1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V)
ID
, DRAIN CURRENT (A)
DC
1s
100ms
100
µ
RDS(ON) LIMIT
VGS = 10V
SINGLE PULSE
RθJA = 350oC/W
TA = 25oC
10ms
1ms
10s
0
1
2
3
4
5
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 350°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
RθJA(t) = r(t) * RθJA
RθJA = 350oC/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
BSS123
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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