Document Number: 81811 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 1.2, 08-Jul-09 1
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
TSHG5410
Vishay Semiconductors
DESCRIPTION
TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Leads with stand-off
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 18°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 18 MHz
• Good spectral matching with CMOS cameras
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras
• High speed IR data transmission
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
Tamb = 25 °C, unless otherwise specified
94 8390
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
TSHG5410 90 ± 18 850 20
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSHG5410 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA
Surge forward current tp = 100 µs IFSM 1A
Power dissipation PV180 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm,
soldered on PCB RthJA 230 K/W
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81811
2Rev. 1.2, 08-Jul-09
TSHG5410
Vishay Semiconductors High Speed Infrared Emitting Diode,
850 nm, GaAlAs Double Hetero
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
Note
Tamb = 25 °C, unless otherwise specified
0
20
40
60
80
100
120
140
160
180
200
01020304050607080 90 100
21142
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
RthJA = 230 K/W
0
20
40
60
80
100
120
0 1020304050607080 90 100
T
amb
- Ambient Temperature (°C)
21143
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.5 1.8 V
IF = 1 A, tp = 100 µs VF2.3 V
Temperature coefficient of VFIF = 1 mA TKVF - 1.8 mV/K
Reverse current VR = 5 V IR10 µA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj125 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie45 90 135 mW/sr
IF = 1 A, tp = 100 µs Ie900 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe55 mW
Temperature coefficient of φeIF = 100 mA TKφe- 0.35 %/K
Angle of half intensity ϕ± 18 deg
Peak wavelength IF = 100 mA λp820 850 880 nm
Spectral bandwidth IF = 100 mA Δλ 40 nm
Temperature coefficient of λpIF = 100 mA TKλp0.25 nm/K
Rise time IF = 100 mA tr20 ns
Fall time IF = 100 mA tf13 ns
Cut-off frequency IDC = 70 mA, IAC = 30 mA pp fc18 MHz
Virtual source diameter d 2.1 mm
Document Number: 81811 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 1.2, 08-Jul-09 3
TSHG5410
High Speed Infrared Emitting Diode,
850 nm, GaAlAs Double Hetero Vishay Semiconductors
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Power vs. Wavelength
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
100
1000
0.01 0.1 1 10 100
t
P
- Pulse Duration (ms)
16031
t
P
/T = 0.01
0.05
0.2
0.5
0.1
0.02
T
amb
< 50 °C
I
F
- Forward Current (mA)
18873
IF - Forward Current (mA)
1000
100
10
1
VF - Forward Voltage (V)
024
tP = 100 µs
tP/T = 0.001
13
1
10
100
1000
1 10 100 1000
tP = 0.1 ms
21308IF - Forward Current (mA)
Ie - Radiant Intensity (mW/sr)
0.1
1
10
100
1000
11 0 100 1000
16971
I
F
- Forward Current (mA)
- Radiant Power (mW)
e
800 850
λ- Wavelength (nm)
900
16972
0
0.25
0.5
0.75
1.0
1.25
Φe, rel - Relative Radiant Power
21355 0.6
0.9
0.8
0° 30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
0
0.2
0.4
Ie rel - Relative Radiant Intensity
ϕ - Angular Displacement
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81811
4Rev. 1.2, 08-Jul-09
TSHG5410
Vishay Semiconductors High Speed Infrared Emitting Diode,
850 nm, GaAlAs Double Hetero
PACKAGE DIMENSIONS in millimeters
35.3 ± 0.55
Ø 5 ± 0.15
Area not plane
< 0.7
2.54 nom.
8.7 ± 0.3
AC
1 min.
(4.5)
0.5 + 0.15
- 0.05
Ø 5.8 ± 0.15
7.7 ± 0.15
1.1 ± 0.25
R2.49 (sphere)
specifications
according to DIN
technical drawings
Drawing-No.: 6.544-5258.11-4
Issue: 2; 19.05.09
21797
12.3 ± 0.3
0.5 + 0.15
- 0.05
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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