5STF 13F1220
TS - TR/187/05 Jul-10 1 of 6
5STF 13F1220
Old part no. TR 918-1250-12
Fast Thyristor
Properties Key Parameters
§ Amplifying gate VDRM, VRRM
=
1 200 V
§ High operational capability ITAV
=
1 252 A
§ Optimized turn-off parameters ITSM
=
21.0 kA
VTO
=
1.772 V
Applications rT
=
0.248 mΩ
§ Power switching applications tq
=
20.0 µs
Types
VRRM, VDRM
5STF 13F1220..1225
5STF 13F1020..1025 1 200 V
1 000 V
Conditions:
Tj = -40 ÷ 125 °C, half sine waveform,
f = 50 Hz
Mechanical Data
Fm Mounting force
22 ± 2
kN
m Weight 0.48
kg
DS Surface
creepage
distance
25
mm
Da Air strike
distance 13
mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250, http://www.abb.com/semiconductors
5STF 13F1220
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/187/05 Jul-10 2 of 6
Maximum Ratings Maximum Limits Unit
VRRM
VDRM
Repetitive peak reverse
and off-state voltage
Tj = -40 ÷ 125 °C
5STF 13F1220..1225
5STF 13F1020..1025 1 200
1 000 V
ITRMS RMS on-state current
Tc = 70 °C, half sine waveform, f = 50 Hz 1 966 A
ITAVm Average on-state current
Tc = 70 °C, half sine waveform, f = 50 Hz 1 252 A
ITSM Peak non-repetitive surge
half sine pulse, VR = 0 V tp = 10 ms
tp = 8.3 ms 21 000
22 400 A
I2t Limiting load integral
half sine pulse, VR = 0 V tp = 10 ms
tp = 8.3 ms 2 205 000
2 080 000 A2s
(diT/dt)cr Critical rate of rise of on-state current
IT = ITAVm, half sine waveform, f = 50 Hz,
VD = 2/3 VDRM, tr = 0.3 µs, IGT = 2 A
800 A/µs
(dvD/dt)cr Critical rate of rise of off-state voltage
VD = 2/3 VDRM 1 000 V/µs
PGAVm Maximum average gate power losses 3 W
IFGM Peak gate current 10 A
VFGM Peak gate voltage 12 V
VRGM Reverse peak gate voltage 10 V
Tjmin - Tjmax Operating temperature range -40 ÷ 125 °C
Tstgmin -
Tstgmax Storage temperature range -40 ÷ 125 °C
Unless otherwise specified Tj = 125 °C
5STF 13F1220
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/187/05 Jul-10 3 of 6
Characteristics Value Unit
min. typ. max.
VTM Maximum peak on-state voltage
ITM = 2 000 A 2.270
V
VT0 Threshold voltage 1.772
V
rT Slope resistance
IT1 = 1 963 A, IT2 = 5 890 A 0.248
mΩ
IDM Peak off-state current
VD = VDRM 150 mA
IRM Peak reverse current
VR = VRRM 150 mA
tgd Delay time
Tj = 25 °C, VD = 0.4 VDRM, ITM = ITAVm,
tr = 0.3 µs, IGT = 2 A
2.0 µs
tq Turn-off time
IT = 1 000 A, diT/dt = -50 A/µs,
VR = 100 V, VD = 2/3 VDRM,
dvD/dt = 50 V/µs
group of tq
5STF 13F1220
5STF 13F1020
5STF 13F1225
5STF 13F1025
20.0
25.0
µs
Qrr Recovery charge
the same conditions as at tq 200 µC
IrrM Reverse recovery current
the same conditions as at tq 100 A
IH Holding current Tj = 25 °C
Tj = 125 °C 250
150 mA
IL Latching current Tj = 25 °C
Tj = 125 °C 1 500
1 000
mA
VGT Gate trigger voltage
VD = 12V, IT = 4 A Tj = - 40 °C
Tj = 25 °C
Tj = 125 °C
0.25
4
3
2
V
IGT
Gate trigger current
VD = 12V, IT = 4 A Tj = - 40 °C
Tj = 25 °C
Tj = 125 °C
10
500
250
150
mA
Unless otherwise specified Tj = 125 °C
5STF 13F1220
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/187/05 Jul-10 4 of 6
Thermal Parameters Value Unit
Rthjc Thermal resistance junction to case
double side cooling 16.0 K/kW
anode side cooling 25.0
cathode side cooling 45.0
Rthch Thermal resistance case to heatsink
double side cooling 4.0 K/kW
single side cooling 8.0
Transient Thermal Impedance
i 1 2 3 4
τi ( s ) 0.4653 0.1533 0.0375 0.0034
Ri( K/kW )
5.50 7.24 2.00 1.34
0
2
4
6
8
10
12
14
16
18
0,001 0,01 0,1 1 10
Square wave pulse duration td ( s )
Transient thermal impedance junction
to case Zthjc ( K/kW )
Analytical function for transient
thermal impedance
∑
=τ−−= 4
1))/exp(1(
iiithjc tRZ
Conditions:
Fm = 22 ± 2 kN, Double side cooled
Correction for periodic waveforms
180°
sine: add 1.3 K/kW
180°
rectangular:
add 1.8 K/kW
120°
rectangular:
add 3.0 K/kW
60°
rectangular:
add 5.1 K/kW
Fig. 2
Dependence transient thermal impedance junction
to case on square pulse
5STF 13F1220
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/187/05 Jul-10 5 of 6
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
0 1 2 3 4 5
VT ( V )
IT ( A )
25 °C
Tj = 125 °C
6
10
14
18
22
26
30
34
1 10 100
t ( ms )
ITSM ( kA )
0,4
0,8
1,2
1,6
2
2,4
2,8
3,2
i2dt (106 A2s)
I
TSM
∫i2dt
Fig. 3
Maximum on-state characteristics Fig. 4
Surge on-state current vs. pulse length,
half sine wave, single pulse,
VR = 0 V, Tj = Tjmax
0
500
1000
1500
2000
2500
3000
3500
0400 800 1200 1600
ITAV ( A )
PT ( W )
ψ
= 30°
60° 90°
120°
180°
DC
0
500
1000
1500
2000
2500
3000
3500
0400 800 1200 1600
ITAV ( A )
PT ( W )
ψ
= 30°
60°
90°
120°
180°
270°
DC
Fig. 5
On-state power loss vs. average on-state
current, sine waveform, f = 50 Hz, T = 1/f Fig. 6
On-state power loss vs. average on-state
current, square waveform, f = 50 Hz, T = 1/f
5STF 13F1220
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TR/187/05 Jul-10 6 of 6
60
70
80
90
100
110
120
130
0 400 800 1200 1600
ITAV ( A )
TC ( °C )
180°
60°
90°
120°
ψ
= 30°
DC
60
70
80
90
100
110
120
130
0 400 800 1200 1600
ITAV ( A )
TC ( °C )
180°
DC
270°
120°
90°
60°
ψ
= 30°
Fig. 7
Max. case temperature vs. aver. on-state
current, sine waveform, f = 50 Hz, T = 1/f Fig. 8
Max. case temperature vs. aver. on-state
current, square waveform, f = 50 Hz, T = 1/f
Notes:
