TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
T4-LDS-0056 Rev. 1 (080812) Page 1 of 3
DEVICES LEVELS
2N3498 2N3499 2N3500 2N3501 JANSM – 3K Rads (Si)
2N3498L 2N3499L 2N3500L 2N3501L JANSD – 10K Rads (Si)
2N3501UB
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N3498*
2N3499* 2N3501*
2N3501* Unit
Collector-Emitter Voltage VCEO 100 150 Vdc
Collector-Base Voltage VCBO 100 150 Vdc
Emitter-Base Voltage VEBO 6.0 6.0 Vdc
Collector Current IC 500 300 mAdc
Total Power Dissipation @ TA = +25°C
@ TC = +25°C PT 1.0
5.0
W
W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 30 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 175 °C/W
* Electrical characteristics for “L” suffix devices are identical to the “non L”
corresponding devices.
1. Derate linearly 5.71 W/°C for TA > 25°C
2. Derate linearly 28.6 W/°C for TC > 25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
2N3498, 2N3499
2N3500, 2N3501
V(BR)CEO
100
150
Vdc
Collector-Base Cutoff Current
VCB = 50Vdc
VCB = 75Vdc
VCB = 100Vdc
VCB = 150Vdc
2N3498, 2N3499
2N3500, 2N3501
2N3498, 2N3499
2N3500, 2N3501
ICBO
50
50
10
10
ηAdc
ηAdc
μAdc
μAdc
TO-5*
2N3498L, 2N3499L
2N2500L, 2N3501L
TO-39* (TO-205AD)
2N3498, 2N3499
2N3500, 2N3501
3 PIN
2N3501UB
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
T4-LDS-0056 Rev. 1 (080812) Page 2 of 3
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
VEB = 4.0Vdc
VEB = 6.0Vdc
IEBO 25
10
ηAdc
μAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1mAdc, VCE = 10Vdc 2N3498, 2N3500
2N3499, 2N3501
20
35
IC = 1.0mAdc, VCE = 10Vdc 2N3498, 2N3500
2N3499, 2N3501
25
50
IC = 10mAdc, VCE = 10Vdc 2N3498, 2N3500
2N3499, 2N3501
35
75
IC = 150mAdc, VCE = 10Vdc 2N3498, 2N3500
2N3499, 2N3501
40
100
120
300
IC = 300mAdc, VCE = 10Vdc 2N3500
2N3501
15
20
IC = 500mAdc, VCE = 10Vdc 2N3498
2N3499
hFE
15
20
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 300mAdc, IB = 30mAdc
IC = 150mAdc, IB = 15mAdc
All Types
2N3498, 3N3499
2N3500, 2N3501
VCE(sat) 0.2
0.6
0.4
Vdc
Base-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 300mAdc, IB = 30mAdc
IC = 150mAdc, IB = 15mAdc
All Types
2N3498, 3N3499
2N3500, 2N3501
VBE(sat) 0.8
1.4
1.2
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude, Forward Current Transfer Ratio
IC = 20mAdc, VCE = 20Vdc, f = 100MHz |hfe| 1.5 8.0
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz 2N3498, 2N3499
2N3500, 2N3501
Cobo 10
8.0 pF
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Cibo 80 pF
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
T4-LDS-0056 Rev. 1 (080812) Page 3 of 3
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Sy mbol Min. Max. Unit
Turn-On Time
VEB = 5Vdc; IC = 150mAdc; IB1 = 15mAdc t
on 115
ηs
Turn-Off Time
IC = 150mAdc; IB1 = IB2 = 15mAdc
toff 1150
ηs
SAFE OPERATING AREA
DC Tests
TC = +25°C, tr ≥ 10ηs; 1 Cycle, t = 1.0s
Test 1
VCE = 10Vdc, IC = 500mAdc
VCE = 16.67Vdc, IC = 300mAdc
VCE = 10Vdc, IC = 113mAdc
2N3498, 2N3499
2N3500, 2N3501
2N3501UB
Test 2
VCE = 50Vdc, IC = 100mAdc
VCE = 50Vdc, IC = 23mAdc
All Types
2N3501UB
Test 3
VCE = 80Vdc, IC = 40mAdc
VCE = 80Vdc, IC = 14mAdc
All Types
2N3501UB
Clamped Switching
TA = +25°C
Test 1
IB = 85mAdc, IC = 500mAdc
IB = 50mAdc, IC = 300mAdc
2N3498, 2N3499
2N3500, 2N3501
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
