Kingbright" INFRA-RED EMITTING DIODES KP-3216F3C KP-3216SF4C KP-3216F3BT KP-3216SF4BT Features | BOTH WATER CLEARLENS AND BLUE TRANSPARENT LENS AVAILABLE. 1 3.2mmx1.6mm SMT LED. 1.1mm THICKNESS. | HIGH POWER OUTPUT. Description F3 Made with Gallium Arsenide Infrared Emitting diodes. SF4 Made with Gallium Aluminum Arsenide Emitting diodes. Selection Guide Package Dimensions 1,6(,063) Notes: POLARITY MARK all F3 1D 2 3.2(.126 SF4. 2(.079) okK}o [5 1.90075) ] 1 2 3. 0.5.02) or 8 w o sy \ A N\ 2 1. Alldimensions are in millimeters (inches). 2. Toleranceis +0.25(0.01")unless otherwise noted. 3.Leadspacing is measured where the lead emerge package. 4. Specifications are subjected to change withoutnotice. lv (mWisr) Viewing Part No. Lens Type @20mA Angle Min. Typ. 201/2 KP-3216F3C Water Clear 0.8 1.25 120 KP-3216F3BT Blue Transparent 0.8 1.25 120 KP-3216SF4C Water Clear 0.8 1.25 120 KP-3216SF4BT Blue Transparent 0.8 1.25 120 Note: 1.61/2is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. 4-KP32F-1Electrical / Optical Characteristics at T .=25C Item P/N Symbol Typ. Max. Unit Condition KP-3216F3C 1.2 1.5 Forward Voltage KPa eee VF 13 v IF=20mA KP-3216SF4BT 1.4 1.7 KP-3216F3C 10 Reverse Current KPa eee IR - 19 uA | VR=5V KP-3216SF4BT 10 KP-3216F3C 90 Junction Capacitance KP ao IOSeaC Co 30 - pF | V=0 f=1MHz KP-3216SF4BT 90 KP-3216F3C 940 Peak Spectral Wavelength KPa eee IR 3a - nm | IF=20mA KP-3216SF4BT 880 KP-3216F3C 50 Spectral Bandwidth KP ao IOSeaC AR 23 - nm | IF=20mA KP-3216SF4BT 50 Absolute Maximum Ratings at T ,=25C Item Symbol Maximum Rating Units Power Dissipation Pd 100 mw Forward Current IF 50 mA Peak Forward Current Ip 1.2 Reverse Voltage VR 5 Vv Operating Temperature Topr -45~ +80 C Storage Temperature Tstg -45~ +80 C Note: 1.Ip Condiction : 1/10 Duty Cycle, 0.1ms Pluse Widih. SF4 FS > 1.0 5 TA=25C c Oo = i N B05 A / oe S 3 PN Oo 0 800 840 880 920 960 1000 1040 Wavelength A (nm) RELATIVE INTENSITY Vs. WAVELENGTH 4-KP32F-2KP-3216F3C/KP-3216F3BT 50 < 40 = e 5 2 2 30 3 (CO a oO a o e i ? . + : 5 8 Oo So 6 10 a a + 32 0 a 3 2 12 16 20 24 28 a 2040 60 60 100 Forward Voltage(V) FORWARD CURRENT Vs. FORWARD VOLTAGE ir-Forward Current(mA) Relative Radiant Intensity Vs. Forward Current 2.5 oe 10 20 2.0 0.5 Qo -40 -20 Oo 20 40 6460 Ambient Temperature Ta(C) FORWARD CURRENT DERATING CURVE SPATIAL DISTRIBUTION KP-3216SF4C/KP-3216SF4BT Out Put Power To Value I-=20mA 50 40 30 20mA 20 Forward Current(mA) Output Power Relative TO Value at IF 12 16 20 24 28 Forward Voltage(V) FORWARD CURRENT Vs. FORWARD VOLTAGE 20 #40 60 80 100 lr-Forward Current(mA) Relative Radiant Intensity Vs. Forward Current NS a 2.0 0.5 oT Nik aS o -40 -20 o 20 40 60 Ambient Temperature Ta(C) FORWARD CURRENT DERATING CURVE Out Put Power To Value I-=20mA & SPATIAL DISTRIBUTION 4-KP32F-3