140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2214 MS2212 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features * * * * * * * GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 85 W MINIMUM Gp = 7.5 dB OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE LOW THERMAL RESISTANCE DESCRIPTION: The MS2214 is a silicon NPN bipolar transistor designed for avionics applications with high duty cycle requirements. Gold metallization and emitter ballasting provides long term reliability under JTIDS and similar pulse formats. ABSOLUTE MAXIMUM RATINGS Symbol VCC IC PDISS TJ T STG (Tcase = 25 C) Parameter Collector-Supply Voltage* Device Current* Power Dissipation* Junction Temperature Storage Temperature Value Unit 40 8.0 300 +250 - 65 to + 200 V A W C C 0.75 C/W Thermal Data RTH(j-c) Junction-Case Thermal Resistance* * Applies only to rated RF operation. MSC0XXXA.DOC 5-13-99 MS2214 ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25 25 C) STATIC Symbol Test Conditions BVCBO BVCER IC = 25mA IC = 25 mA IE = 10 mA VCE = 35 V VCE = 5 V BVEBO ICES hFE IE = 0 mA RBE = 10 IC = 0 mA VB E = 0 V IC = 2A Min. Value Typ. Max. Unit 55 55 3.5 ---20 ---------------- ---------20 200 V V V mA ---- Min. Value Typ. Max. Unit 85 40 7.5 ---------- ---------- W % dB DYNAMIC Symbol POUT Test Conditions f = 960 - 1215 MHz PIN = 15 W f = 960 - 1215 MHz PIN = 15 W f = 960 - 1215 MHz PIN = 15 W C GP VCC = 35 V VCC = 35 V VCC = 35 V Pulse Format: 6.4 S on 6.6 S off, repeat for 3.3 ms. Duty Cycle: Burst 49.2%, overall 20.8% Note: IMPEDANCE DATA: FREQUENCY 960 MHz 1090 MHz 1215 MHz Pin = 15W Vcc = 35V MSC0XXXA.DOC 5-13-99 Zin 3.0 + j5.0 5.5 + j5.5 5.3 + j4.5 Zcl 7.0 - j5.0 3.7 - j1.8 3.0 - j2.5 MS2214 PACKAGE MECHANICAL DATA MSC0XXXA.DOC 5-13-99