BSD223PL6327XT - INFINEON TECHNOLOGIES AG

2006-12-04

Rev.1.3 Page 1

BSD 223P

OptiMOS



-P Small-Signal-Transistor Product Summary

VDS -20 V

RDS

(

on

)

1.2 Ω

ID-0.39 A

Feature

• Dual P-Channel

• Enhancement mode

• Super Logic Level (2.5 V rated)

• 150°C operating temperature

• Avalanche rated

• dv/dt rated

PG-SOT-363

VPS05604

6

3

1

54

2

Gate

pin 2,5

Drain

pin 6,3

Source

pin 1,4

MOSFET1: 1,2,6

MOSFET2: 3,4,5

Marking

X1s

Type Package Tape & Reel

BSD 223P PG-SOT-363 L6327: 3000pcs/r

Maximum Ratings, at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

TA=25°C

TA=70°C

ID

-0.39

-0.31

A

Pulsed drain current

TA=25°C

ID puls -1.56

Avalanche energy, single pulse

ID=-0.39 A , VDD=-10V, RGS=25Ω

EAS 1.4 mJ

Reverse diode dv/dt

IS=-0.39A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C

dv/dt-6 kV/µs

Gate source voltage VGS ±12 V

Power dissipation

TA=25°C

Ptot 0.25 W

Operating and storage temperature T

j

, Tst

g

-55... +150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

2006-12-04

Rev.1.3 Page 2

BSD 223P

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point RthJS - - 180 K/W

Thermal resistance, junction - ambient, leaded RthJ

A

- - 500

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=-250µA

V(BR)DSS -20 - - V

Gate threshold voltage, VGS = VDS

ID=-1.5µA

VGS(th) -0.6 -0.9 -1.2

Zero gate voltage drain current

VDS=-20V, VGS=0, Tj=25°C

VDS=-20V, VGS=0, Tj=150°C

IDSS

-

-0.1

-10

-1

-100

µA

Gate-source leakage current

VGS=-12V, VDS=0

IGSS - -10 -100 nA

Drain-source on-state resistance

VGS=-2.5V, ID=-0.29A

RDS(on) - 1.27 2.1 Ω

Drain-source on-state resistance

VGS=-4.5, ID=-0.39A

RDS(on) - 0.7 1.2

2006-12-04

Rev.1.3 Page 3

BSD 223P

Electrical Characteristics, at T

j

= 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance gfs çVDSç≥2*çIDç*RDS(on)max

ID=-0.31A

0.35 0.7 - S

Input capacitance Ciss VGS=0, VDS=-15V,

f=1MHz

- 45 56 pF

Output capacitance Coss - 21 26

Reverse transfer capacitance Crss - 17 22

Turn-on delay time td

(

on

)

VDD=-10V, VGS=-4.5V,

ID=-0.39A, RG=6Ω

- 3.8 5.7 ns

Rise time tr- 5 7.5

Turn-off delay time td

(

off

)

- 5.1 7.6

Fall time tf- 3.2 4.8

Gate Charge Characteristics

Gate to source charge Q

g

sVDD=-10V, ID=-0.39A - -0.04 -0.05 nC

Gate to drain charge Q

g

d- -0.4 -0.5

Gate charge total QgVDD=-10V, ID=-0.39A,

VGS=0 to -4.5V

- -0.5 -0.62

Gate plateau voltage V

(p

lateau

)

VDD=-10V, ID=-0.39A - -2.2 -2.7 V

Reverse Diode

Inverse diode continuous

forward current ISTA=25°C - - -0.39 A

Inv. diode direct current, pulse

d

ISM - - -1.56

Inverse diode forward voltage VSD VGS=0, IF=-0.39 - -1 -1.33 V

Reverse recovery time trr VR=-10V, |IF| = |lD|,

diF/dt=100A/µs

- 7.6 9.5 ns

Reverse recovery charge Qrr - 1.1 1.4 nC

2006-12-04

Rev.1.3 Page 4

BSD 223P

1 Power dissipation

Ptot = f (TA)

0 20 40 60 80 100 120 °C 160

TA

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0.18

0.2

0.22

0.24

W

0.28 BSD 223P

Ptot

2 Drain current

ID = f (TA)

parameter: |VGS|≥ 4.5 V

0 20 40 60 80 100 120 °C 160

TA

0

-0.04

-0.08

-0.12

-0.16

-0.2

-0.24

-0.28

-0.32

-0.36

A

-0.42 BSD 223P

ID

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TA = 25 °C

-10 -1 -10 0 -10 1 -10 2

VVDS

-2

-10

-1

-10

0

-10

1

-10

A

BSD 223P

ID

R

DS(on)

= V

DS

/ I

D

DC

10 ms

1 ms

tp = 390.0µs

4 Transient thermal impedance

ZthJA = f (tp)

parameter : D = tp/T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

10

K/W BSD 223P

ZthJA

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

2006-12-04

Rev.1.3 Page 5

BSD 223P

5 Typ. output characteristic

ID = f (VDS)

parameter: Tj =25°C

0 0.3 0.6 0.9 V1.5

-VDS

0

0.1

0.2

0.3

0.4

0.5

A

0.7

-ID

2.2V

2.5V

3V

4V

4.5V

6V

7V

8V

10V

6 Typ. drain-source on resistance

RDS(on) = f (ID)

parameter: VGS

0 0.1 0.2 0.3 0.4 0.5 A0.7

-ID

0

0.5

1

1.5

2

2.5

3

Ω

4

RDS(on)

2.2V

2.5V

3V

4V

4.5V

6V

7V

8V

10V

7 Typ. transfer characteristics

ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max

parameter: Tj = 25 °C

0 0.5 1 1.5 2 V3

-VGS

0

0.1

0.2

0.3

0.4

0.5

A

0.7

-ID

8 Typ. forward transconductance

gfs = f(ID)

parameter: T

j

= 25 °C

0 0.1 0.2 0.3 0.4 0.5 A0.7

-ID

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

S

1.1

gfs

2006-12-04

Rev.1.3 Page 6

BSD 223P

9 Drain-source on-resistance

RDS(on) = f(Tj)

parameter: ID = -0.39 A, VGS = -4.5 V

-60 -20 20 60 100 °C 160

Tj

0

0.2

0.4

0.6

0.8

1

1.2

Ω

1.6

RDS(on)

typ.

98%

10 Typ. gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS

-60 -20 20 60 100 °C 160

Tj

0

0.2

0.4

0.6

0.8

1

1.2

V

1.6

- VGS(th)

2%

typ.

98%

11 Typ. capacitances

C = f (VDS)

parameter: VGS=0, f=1 MHz

0 2 4 6 8 10 12 V15

-VDS

1

10

2

10

pF

C

Ciss

Coss

Crss

12 Forward character. of reverse diode

IF = f (VSD)

parameter: T

j

0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V-3

VSD

-2

-10

-1

-10

0

-10

1

-10

A

BSD 223P

IF

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)

2006-12-04

Rev.1.3 Page 7

BSD 223P

13 Typ. avalanche energy

EAS = f (Tj), par.: ID = -0.39 A

VDD = -10 V, RGS = 25 Ω

20 40 60 80 100 120 °C 160

Tj

0

0.2

0.4

0.6

0.8

1

mJ

1.4

EAS

14 Typ. gate charge

VGS = f (QGate)

parameter: ID = -0.39 A pulsed; Tj = 25 °C

0 0.2 0.4 0.6 0.8 1 nC 1.3

|QGate|

0

-2

-4

-6

-8

-10

-12

V

-16 BSD 223P

VGS

20%

50%

80%

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

-60 -20 20 60 100 °C 180

Tj

-18

-18.5

-19

-19.5

-20

-20.5

-21

-21.5

-22

-22.5

-23

-23.5

V

-24.5 BSD 223P

V(BR)DSS

2006-12-04

Rev.1.3 Page 8

BSD 223P

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

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regarding circuits, descriptions and charts stated herein.

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