APTGT225SK170
APTGT225SK170 – Rev 0 May, 2005
APT website
–
http:/
/
www.advancedpower.com 1 - 5
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1700 V
TC = 25°C 340
IC Continuous Collector Current TC = 80°C 225
ICM Pulsed Collector Current TC = 25°C 450
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 1250 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 450A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Q1
G1
0/ VB US
OUT
E1
CR2
VBUS
VBUS OUT
0/VBUS
E1
G1
VCES = 1700V
IC = 225A @ Tc = 80°C
Applicatio
n
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching freque nc y up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
Buck chopper
Trench + Field Stop IGBT®
Power Modul
e
APTGT225SK170
APTGT225SK170 – Rev 0 May, 2005
APT website
–
http:/
/
www.advancedpower.com 2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1700V 500 µA
Tj = 25°C 2.0 2.4
VCE(sat) Collector Emitter Saturation Voltage VGE = 15V
IC = 225A Tj = 125°C 2.4 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 4mA 5.0 5.8 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 600 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 20
Coes Output Capacitance 0.8
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 0.66
nF
Td(on) Tur n-o n Delay Ti me 370
Tr Rise Time 40
Td(off) Turn-off Delay Time 650
Tf Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 900V
IC = 225A
RG = 3.3Ω 180
ns
Td(on) Turn-on Delay Time 400
Tr Rise Time 50
Td(off) Turn-off Delay Time 800
Tf Fall Time 300
ns
Eon Turn-on Switching Energy 72
Eoff Turn-off Switching Energy
Inductive Switching (125°C)
VGE = 15V
VBus = 900V
IC = 225A
RG = 3.3Ω
70.5 mJ
Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1700 V
Tj = 25°C 500
IRM Maximum Reverse Leakage Current VR=1700V Tj = 125°C 750 µA
IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 80°C 225 A
Tj = 25°C 1.8 2.2
VF Diode Forward Voltage IF = 225A Tj = 125°C 1.9 V
Tj = 25°C 385
trr Reverse Recovery Time Tj = 125°C 490 ns
Tj = 25°C 60
Qrr Reverse Recovery Charge
IF = 225A
VR = 900V
di/dt =2400A/µs
Tj = 125°C 96 µC
APTGT225SK170
APTGT225SK170 – Rev 0 May, 2005
APT website
–
http:/
/
www.advancedpower.com 3 - 5
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.1
RthJC Junction to Case Diode 0.18
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 3400 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
To heatsink M6 3 5
Torque Mounting torque For terminals M5 2 3.5 N.m
Wt Package Weight 280 g
Package outline (dimensions in mm)
APTGT225SK170
APTGT225SK170 – Rev 0 May, 2005
APT website
–
http:/
/
www.advancedpower.com 4 - 5
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
50
100
150
200
250
300
350
400
450
01234
VCE (V )
IC (A)
Output Characteristics
VGE=15V
VGE=13V
VGE
=20V
VGE
=9V
0
50
100
150
200
250
300
350
400
450
012345
VCE (V)
IC (A)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
TJ=125°C
0
50
100
150
200
250
300
350
400
450
5 6 7 8 9 10 11 12 13
VGE (V)
IC (A)
Energy losses vs Collector Current
Eon
Eoff
Er
0
30
60
90
120
150
180
0 100 200 300 400 500
IC (A)
E (mJ)
VCE = 900V
VGE = 15V
RG = 3.3Ω
TJ
= 125°C
Eon
Eoff
Er
0
30
60
90
120
150
180
2 4 6 8 10 12 14 16 18 20
Gate Resistance (ohms)
E (mJ)
VCE = 900V
VGE
=15V
IC = 225A
TJ = 125°C
Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area
0
100
200
300
400
500
0 400 800 1200 1600 2000
VCE (V)
IC (A)
VGE=15V
TJ=125°C
R
G
=3.3Ω
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
APTGT225SK170
APTGT225SK170 – Rev 0 May, 2005
APT website
–
http:/
/
www.advancedpower.com 5 - 5
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ=125°C
0
50
100
150
200
250
300
350
400
450
00.511.522.53
VF (V)
IC (A )
hard
switching
ZCS
ZVS
0
5
10
15
20
0 60 120 180 240 300 360
IC (A)
Fmax, Operating Frequency (kHz)
VCE=900V
D=50%
RG=3.3Ω
TJ=125°C
TC=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Singl e Pulse
0
0.04
0.08
0.12
0.16
0.2
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
APT re s erves the rig ht to c ha nge , without notice , the s pe cificatio ns and i nfo rmatio n co nta ine d he rein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
