UNISONIC TECHNOLOGIES CO., LTD
X1049A NPN SILICON TRANSISTOR
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Copyright © 2012 Unisonic Technologies Co., Ltd QW-R201-061.C
HIGH GAIN TRANSISTOR
FEATURES
* VCEV = 80V
* High Gain
* 20 Amps pulse current
TO-92
1
ORDERING INFORMATION
Ordering Number Package Pin Assignment Packing
Lead Free Halogen Free 1 2 3
X1049AL-T92-B X1049AG-T92-B TO-92 E B C Tape Box
X1049AL-T92-K X1049AG-T92-K TO-92 E B C Bulk
X1049AL-T92-R X1049AG-T92-R TO-92 E B C Tape Reel
X1049A NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATING (TA=25℃)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5 V
Collector Current DC IC 4 A
Pulse 20 A
Base Current IB 500 mA
Power Dissipation PD 1 W
Junction Temperature TJ 125
℃
Operating Temperature TOPR -20 ~ +85 ℃
Storage Temperature TSTG -40 ~ +150 ℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise specified)℃
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage VCBO I
C=100μA 80 120 V
Collector-Emitter Breakdown Voltage VCEO I
C=10mA 25 35 V
Collector-Emitter Breakdown Voltage VCES I
C=100μA 80 120 V
Collector-Emitter Breakdown Voltage VCEV I
C=100μA, VEB=1V 80 120 V
Emitter-Base Breakdown Voltage VEBO I
E=100μA 5 8.75 V
Collector Cut-Off Current ICBO V
CB=50V 0.3 10 nA
Emitter Cut-Off Current IEBO V
EB=4V 0.3 10 nA
Collector Emitter Cut-Off Current ICES V
CES=50V 0.3 10 nA
Collector-Emitter Saturation Voltage
(Note) VCE(SAT)
IC=0.5A, IB=10mA 30 70
mV
IC=1A, IB=10mA 60 130
IC=2A, IB=10mA 125 280
IC=4A, IB=50mA 155 400
Base-Emitter Saturation Voltage (Note) VBE
(
SAT
)
IC=4A, IB=50mA 890 980 mV
Base-Emitter Turn-On Voltage (Note) VBE
(
ON
)
IC=4A, VCE=2V 820 920 mV
DC Current Gain (Note) hFE
IC=10mA, VCE=2V 250 430
IC=0.5A, VCE=2V 300 450
IC=1A, VCE=2V 300 450 1200
IC=4A, VCE=2V 200 350
IC=20A, VCE=2V 7
Transition Frequency fT I
C=50mA, VCE=10V, f=50MHz 180 MHz
Output Capacitance COBO V
CB=10V, f=1MHz 45 60 pF
Turn-On Time tON I
C=4A, IB=40mA, VCC=10V 125 ns
Turn-Off Time tOFF I
C=4A, IB=±40mA, VCC=10V 380 ns
Note: Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤2%
X1049A NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
X1049A NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
180
160
140
120
60
0
0.1ms 1ms 10ms
Pulse Width
Transient Thermal Resistance
100ms 1s 100s
100
80
40
20
10s
D=1(D,C)
D=0.5
D=0.2
D=0.1
D=0.05
Ambient Temperature ( ℃ )
1.0
0.75
0.25
0.00
-40 040 80 120 160 200
0.50
Power Dissipation vs. Ambient Temperature
Single Pulse
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
