Document Number: MC33662
Rev. 8.0, 12/2018
ISO 17987/LIN 2.x/SAEJ2602-2
LIN Physical Layer
The Local Interconnect Network (LIN) is a serial communication
protocol, designed to support automotive networks in conjunction with
a Controller Area Network (CAN). As the lowest level of a hierarchical
network, LIN enables cost-effective communication with sensors and
actuators when all the features of CAN are not required.
The three 33662 versions are designed to operate at different
maximum baud rates. The 33662LEF and 33662BLEF, and the
33662SEF and 33662BSEF, offer a normal baud rate (20 kbps), and
the 33662JEF and 33662BJEF, a slow baud rate (10 kbps). They
integrate a fast baud rate (above 100 kbps), as reported by the RXD pin
for test and programming modes. They provide excellent EMC
(Electromagnetic Compatibility) and Radiated Emission performance,
ESD (Electrostatic Discharge) robustness, and safe behavior, in the
event of a LIN bus short-to-ground, or a LIN bus leakage during low-
power mode. This device is powered by SMARTMOS technology.
Features
• Operational from a VSUP of 7.0 to 18 V DC, functional up to 27 V DC,
and handles 40 V during Load Dump
•
•
Compliant with LIN 2.0, LIN 2.1, LIN 2.2, LIN 2.2A, SAE J2602
and ISO 17987-4:2016 (12 V)
Active bus wave shaping, offering excellent radiated emission
performance
• Sustains up to 15.0 kV minimum ESD IEC61000-4-2 on the LIN Bus,
20 kV on the WAKE pin, and 25 kV on the VSUP pin
•Very high immunity against electromagnetic interference
• Low standby current in Sleep mode
•Overtemperature protection
•Local and remote Wake-up capability reported by the RXD pin
•Fast baud rate selection reported by RXD pin
•5.0 V and 3.3 V compatible digital inputs without any required
external components
•Pin-to-pin compatible with TJA1021
Figure 1. 33662 Master LIN Bus Simplified Application Diagram
LINCELL
33662
EF SUFFIX (PB-FREE)
98ASB42564B
8-PIN SOICN
Applications
• Automotive Market:
• Body electronics (BCM, gateway, roof, door,
lighting, HVAC)
• Powertrain (EMS, start & stop), BMS
• Safety & Chassis (TPMS, seat belt)
33662
WAKE
EN
TXD
VSUP
INH
LIN
GND
MCU
V
DD
12 V
5.0 V
or 3.3 V
V
BAT
LIN Interface
RXD
Regulator
CAN SBC
or
2
33662
DEVICE VARIATIONS
Table 1. Device Variations
Part No.
(Add an R2 suffix for Tape and Reel
orders)
Maximum Baud Rate Temperature Range (TA)Package
MC33662LEF (1)
MC33662BLEF 20 kbps
- 40 to 125 °C 8 SOICN
MC33662SEF (1)
MC33662BSEF
20 kbps with restricted limits for
transmitter and receiver symmetry
MC33662JEF (1)
MC33662BJEF 10 kbps
Notes
1. In Sleep mode, the total module current consumption may be higher than expected if the external pull-up resistor on the RxD pin
is implemented. There may be an unexpected glitch on RxD as INH goes low.
3
33662
INTERNAL BLOCK DIAGRAM
INTERNAL BLOCK DIAGRAM
Figure 2. 33662 Simplified Internal Block Diagram
VSUP
INH
LIN
EN
RXD
TXD
WAKE
GND
Control Unit
X 1
200 k
EN_RXD
INH_ON
EN-SLEEP
RXD_INT
Receiver
LIN_EN
TXD_INT
Slope
Control
30 k725 k
4
33662
PIN CONNECTIONS
Figure 3. 33662 8-SOICN Pin Connections
Table 2. 33662 8-SOICN Pin Definitions
A functional description of each pin can be found in the Functional Pin Description section beginning on page 21.
Pin PIN NAME Pin Function Formal Name Definition
1RXD Output Data Output This pin is the receiver output of the LIN interface which reports the state
of the bus voltage to the MCU interface.
2EN Input Enable Control This pin controls the operation mode of the interface.
3WAKE Input Wake Input This pin is a high-voltage input used to wake-up the device from Sleep
mode.
4TXD Input Data Input This pin is the transmitter input of the LIN interface which controls the
state of the bus output.
5GND Ground Ground This pin is the device ground pin.
6LIN Input/Output LIN Bus This bidirectional pin represents the single-wire bus transmitter and
receiver.
7VSUP Power Power Supply This pin is the device battery level power supply.
8 INH Output Inhibit Output This pin can have two main functions: controlling an external switchable
voltage regulator having an inhibit input, or driving an external bus
resistor in the master node application.
1
2
3
45
6
7
8
RXD
EN
WAKE
TXD
INH
VSUP
LIN
GND
5
33662
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 3. Maximum Ratings
All voltages are with respect to ground, unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings Symbol Value Unit
ELECTRICAL RATINGS
Power Supply Voltage
Normal Operation (DC)
Transient input voltage with external component (according to ISO7637-2 & ISO7637-
3 & “Hardware Requirements for LIN, CAN and Flexray Interfaces in Automotive
Applications” specification Rev1.1 / December 2nd, 2009) (See Table 4 and Figure 4)
- Pulse 1 (test up to the limit for Damage - Class A(2))
- Pulse 2a (test up to the limit for Damage - Class A(2))
- Pulse 3a (test up to the limit for Damage - Class A(2))
- Pulse 3b (test up to the limit for Damage - Class A(2))
- Pulse 5b (Class A)(2)
VSUP(SS)
VSUP(S1)
VSUP(S2A)
VSUP(S3A)
VSUP(S3B)
VSUP(S5B)
-0.3 to 27
-100
+75
-150
+100
-0.3 to 40
V
WAKE
Normal Operation within series 2*18 k resistor (DC)
Transient input voltage with external component (according to ISO7637-2 & ISO7637-
3 & “Hardware Requirements for LIN, CAN and Flexray Interfaces in Automotive
Applications” specification Rev1.1 / December 2nd, 2009) (See Table 4 and Figure 5)
- Pulse 1 (test up to the limit for Damage - Class D(3))
- Pulse 2a (test up to the limit for Damage - Class D(3))
- Pulse 3a (test up to the limit for Damage - Class D(3))
- Pulse 3b (test up to the limit for Damage - Class D(3))
VWAKE(SS)
VWAKE(S1)
VWAKE(S2A)
VWAKE(S3A)
VWAKE(S3B)
-27 to 40
-100
+75
-150
+100
V
Logic Voltage (RXD, TXD, EN Pins) VLOG - 0.3 to 5.5 V
LIN Bus Voltage
Normal Operation (DC)
Transient (Coupled Through 1.0 nF Capacitor, according to ISO7637-2 & ISO7637-3
& “Hardware Requirements for LIN, CAN and Flexray Interfaces in Automotive
Applications” specification Rev1.1 / December 2nd, 2009) (See Table 4 and Figure 6)
- Pulse 1 (test up to the limit for Damage - Class D(3))
- Pulse 2a (test up to the limit for Damage - Class D(3))
- Pulse 3a (test up to the limit for Damage - Class D(3))
- Pulse 3b (test up to the limit for Damage - Class D(3))
VBUS(SS)
VBUS(S1)
VBUS(S2A)
VBUS(S3A)
VBUS(S3B)
-27 to 40
-100
+75
-150
+100
V
INH Voltage / Current
DC Voltage
Transient (Coupled Through 1.0 nF Capacitor, according to ISO7637-2 & ISO7637-3
& “Hardware Requirements for LIN, CAN and Flexray Interfaces in Automotive
Applications” specification Rev1.1 / December 2nd, 2009) (See Table 4 and Figure 7)
- Pulse 1 (test up to the limit for Damage - Class D(3))
- Pulse 2a (test up to the limit for Damage - Class D(3))
- Pulse 3a (test up to the limit for Damage - Class D(3))
- Pulse 3b (test up to the limit for Damage - Class D(3))
VINH
VINH(S1)
VINH(S2A)
VINH(S3A)
VINH(S3B)
- 0.3 to VSUP +0.3
-100
+75
-150
+100
V
Notes
2. Class A: All functions of a device/system perform as designed during and after exposure to disturbance.
3. Class D: At least one function of the transceiver stops working properly during the test, and will return to proper operation automatically
when the exposure to the disturbance has ended. No physical damage of the IC occurs.
6
33662
ELECTRICAL RATINGS (CONTINUED)
ESD Capability - AECQ100
Human Body Model - JESD22/A114 (CZAP = 100 pF, RZAP = 1500 )
LIN pin versus GND
Wake pin versus GND
All other pins
Charge Device Model - JESD22/C101 (CZAP = 4.0 pF
Corner pins (Pins 1, 4, 5 and 8)
All other pins (Pins 2, 3, 6 and 7)
Machine Model - JESD22/A115 (CZAP = 220 pF, RZAP = 0 )
All pins
According to “Hardware Requirements for LIN, CAN and Flexray Interfaces in
Automotive Applications” specification Rev1.1 / December 2nd, 2009 (CZAP = 150 pF,
RZAP = 330 )
Contact Discharge, Unpowered
LIN pin without capacitor
LIN pin with 220 pF capacitor
VSUP (10 µF to ground)
WAKE (2*18 k serial resistor)
INH pin
LIN pin with 220 pF capacitor and indirect ESD coupling (according to ISO10605
-Annex F)
According to ISO10605 - Rev 2008 test specification
(2.0 k / 150 pF) - Unpowered - Contact discharge
LIN pin without capacitor
LIN pin with 220 pF capacitor
VSUP (10 µF to ground)
WAKE (2*18 k serial resistor)
(2.0 k / 330 pF) - Powered - Contact discharge
LIN pin without capacitor
LIN pin with 220 pF capacitor
VSUP (10 µF to ground)
WAKE (2*18 k serial resistor)
VESD1-1
VESD1-2
VESD1-4
VESD2-1
VESD2-2
VESD3-1
VESD4-1
VESD4-2
VESD4-3
VESD4-4
VESD4-5
VESD4-6
VESD5-1
VESD5-2
VESD5-3
VESD5-4
VESD6-1
VESD6-2
VESD6-3
VESD6-4
± 10.0 k
± 8.0 k
± 4.0 k
± 750
± 500
± 200
± 15 k
± 15 k
±25 k
±20 k
±2.0 k
>± 15 k
± 20 k
± 25 k
±25 k
±25 k
± 8 k
± 10 k
±12 k
±15 k
V
THERMAL RATINGS
Operating Temperature
Ambient
Junction
TA
TJ
- 40 to 125
- 40 to 150
C
Storage Temperature TSTG - 40 to 150 C
Thermal Resistance, Junction to Ambient RJA 150 °C/W
Peak Package Reflow Temperature During Solder Mounting (4) TSOLDER 240 °C
Thermal Shutdown Temperature TSHUT 150 to 200 °C
Thermal Shutdown Hysteresis Temperature THYST 20 °C
Notes
4. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may
cause malfunction or permanent damage to the device.
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 3. Maximum Ratings (continued)
All voltages are with respect to ground, unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings Symbol Value Unit
7
33662
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Figure 4. Test Circuit for Transient Test Pulses (VSUP)
Figure 5. Test Circuit for Transient Test Pulses (WAKE)
Figure 6. Test Circuit for Transient Test Pulses (LIN)
Figure 7. Test Circuit for Transient Test Pulses (INH)
Table 4. Limits / Maximum Test Voltage for Transient Immunity Tests
Test Pulse VS [V]
Pulse repetition
frequency [Hz]
(1/T1)
Test Duration [min] Ri []Remarks
1-100 2
1 for function test
10 for damage test
10 t2 = 0 s
2a +75 2 2
3a -150 10000 50
3b +100 10000 50
VSUP
Transient Pulse
Generator
(Note)
Note
Waveform per ISO 7637-2. Test Pulses 1, 2a, 3a, 3b.
GND
DUT
DUT GND
D1
10 µF
WAKE
Transient Pulse
Generator
1.0 nF
(Note)
18 k
Note
Waveform per ISO 7637-2. Test Pulses 1, 2a, 3a, 3b.
GND
DUT
DUT GND
18 k
LIN
Transient Pulse
Generator
1.0 nF
(Note)
Note
Waveform per ISO 7637-2. Test Pulses 1, 2a, 3a, 3b.
GND
DUT
DUT GND
INH
Transient Pulse
Generator
1.0 nF
(Note)
Note
Waveform per ISO 7637-2. Test Pulses 1, 2a, 3a, 3b.
GND
DUT
DUT GND
8
33662
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 5. Static Electrical Characteristics
Characteristics under conditions 7.0 V VSUP 18 V, - 40C TA 125C, GND = 0 V, unless otherwise noted. Typical
values reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic Symbol Min Typ Max Unit
VSUP PIN (DEVICE POWER SUPPLY)
Nominal Operating Voltage VSUP 7.0 13.5 18.0 V
Functional Operating Voltage(5) VSUPOP 6.7 –27 V
Load Dump VSUPLD – – 40 V
Power-On Reset (POR) Threshold
VSUP Ramp Down and INH goes High to Low
VPOR
3.5 –5.3
V
Power-On Reset (POR) Hysteresis VPORHYST –270 –mV
VSUP Undervoltage Threshold (positive and negative)
Transmission disabled and LIN bus goes in recessive state
VUVL, VUVH
5.8 –6.7
V
VSUP Undervoltage Hysteresis (VUVL - VUVH)VUVHYST –130 –mV
Supply Current in Sleep Mode
VSUP 13.5 V, Recessive State
13.5 V < VSUP < 27 V
VSUP 13.5 V, Shorted to GND
IS1
IS2
IS3
—
—
—
6.0
—
24
11
20
70
A
Supply Current in Normal or Slow or Fast Mode
Bus Recessive, Excluding INH Output Current
Bus Dominant, Excluding INH Output Current
IS(REC)
IS(DOM)
—
—
4.0
6.0
6.0
8.0
mA
RXD OUTPUT PIN (LOGIC)
Low Level Output Voltage
IIN 1.5 mA
VOL
0 — 0.9
V
High Level Output Voltage
VEN = 5.0 V, IOUT 250 A
VEN = 3.3 V, IOUT 250 A
VOH
4.25
3.0
—
—
5.25
3.5
V
TXD INPUT PIN (LOGIC)
Low Level Input Voltage VIL — — 0.8 V
High Level Input Voltage VIH 2.0 — — V
Input Threshold Voltage Hysteresis VINHYST 100 300 600 mV
Pull-up Current Source
VEN = 5.0 V, 1.0 V < VTXD < 3.5 V
IPU
- 60 - 35 - 20
A
EN INPUT PIN (LOGIC)
Low Level Input Voltage VIL — — 0.8 V
High Level Input Voltage VIH 2.0 — — V
Input Voltage Threshold Hysteresis VINHYST 100 400 600 mV
Pull-down Resistor RPD 100 230 350 kohm
5. For the functional operating voltage, the device is functional and all features are operating. The electrical parameters are noted under
conditions 7.0 V VSUP 18V, -40oC TA 125o C, GND = 0 V.
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33662
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
LIN PHYSICAL LAYER - TRANSCEIVER LIN(6)
Operating Voltage Range(7) VBAT 8.0 –18 V
Supply Voltage Range VSUP 7.0 –18 V
Voltage Range (within which the device is not destroyed) VSUP_NON_OP -0.3 –40 V
Current Limitation for Driver Dominant State
Driver ON, VBUS = 18 V
IBUS_LIM
40 90 200
mA
Input Leakage Current at the Receiver
Driver off; VBUS = 0 V; VBAT = 12 V
IBUS_PAS_DOM
-1.0 – –
mA
Leakage Output Current to GND
Driver Off; 8.0 V VBAT 18 V; 8.0 V VBUS 18 V; VBUS VBAT;
VBUS VSUP
IBUS_PAS_REC
– – 20
µA
Control Unit Disconnected from Ground(8)
GNDDEVICE = VSUP; VBAT = 12 V; 0 < VBUS < 18 V
IBUS_NO_GND
-1.0 –1.0
mA
VBAT Disconnected; VSUP_DEVICE = GND; 0 V < VBUS < 18 V(9) IBUSNO_BAT – – 10 µA
Receiver Dominant State(10) VBUSDOM – – 0.4 VSUP
Receiver Recessive State(11) VBUSREC 0.6 – – VSUP
Receiver Threshold Center
(VTH_DOM + VTH_REC)/2
VBUS_CNT
0.475 0.5 0.525
VSUP
Receiver Threshold Hysteresis
(VTH_REC - VTH_DOM)
VHYS
– – 0.175
VSUP
LIN dominant level with 500 680 and 1.0 k load on the LIN bus VLINDOM_LEVEL – – 0.25 VSUP
VBAT_SHIFT VSHIFT_BAT 0 – 11.5% VBAT
GND_SHIFT VSHIFT_GND 0 – 11.5% VBAT
LIN Wake-up Threshold from Sleep Mode VBUSWU –4.3 5.3 V
LIN Pull-up Resistor to VSUP RSLAVE 20 30 60 k
LIN Internal Capacitor(12) CLIN 30 pF
Overtemperature Shutdown(13) TLINSD 150 160 200 °C
Overtemperature Shutdown Hysteresis TLINSD_HYS –20 –°C
Notes
6. Parameters guaranteed for 7.0 V VSUP 18 V.
7. Voltage range at the battery level, including the reverse battery diode.
8. Loss of local ground must not affect communication in the residual network.
9. Node has to sustain the current that can flow under this condition. The bus must remain operational under this condition.
10. LIN threshold for a dominant state.
11. LIN threshold for a recessive state.
12. This parameter is guaranteed by process monitoring but not production tested.
13. When an overtemperature shutdown occurs, the LIN transmitter and receiver are in recessive state and INH switched off. This parameter
is tested with a test mode on ATE and characterized at laboratory.
Table 5. Static Electrical Characteristics (continued)
Characteristics under conditions 7.0 V VSUP 18 V, - 40C TA 125C, GND = 0 V, unless otherwise noted. Typical
values reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic Symbol Min Typ Max Unit
10
33662
INH OUTPUT PIN
Driver ON Resistance (Normal Mode)
IINH = 50 mA
INHON
— — 50
Current load capability
From 7.0 V < VSUP < 18 V
IINH_LOAD
— — 30
mA
Leakage Current (Sleep Mode)
0 < VINH < VSUP
ILEAK
-5.0 —5.0
A
Overtemperature Shutdown(14) TINHSD 150 160 200 °C
Overtemperature Shutdown Hysteresis TINHSD_HYS —20 —°C
WAKE INPUT PIN
High to Low Detection Threshold (5.5 V < VSUP < 7 V) VWUHL1 2.0 —3.9 V
Low to High Detection Threshold (5.5 V < VSUP < 7 V) VWULH1 2.4 —4.3 V
Hysteresis (5.5 V < VSUP < 7 V) VWUHYS1 0.2 —0.8 V
High to Low Detection Threshold (7 V VSUP < 27 V) VWUHL2 2.4 —3.9 V
Low to High Detection Threshold (7 V VSUP < 27 V) VWULH2 2.9 —4.3 V
Hysteresis (7 V VSUP < 27 V) VWUHYS2 0.2 —0.8 V
Wake-up Input Current (VWAKE < 27 V) IWU — — 5.0 µA
Notes
14. When an overtemperature shutdown occurs, the INH high side is switched off and the LIN transmitter and receiver are in recessive state.
This parameter is tested with a test mode on ATE and characterized at laboratory.
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 5. Static Electrical Characteristics (continued)
Characteristics under conditions 7.0 V ≤ VSUP ≤ 18 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V, unless otherwise noted.
Typical values reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic Symbol Min Typ Max Unit
11
33662
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 6. Dynamic Electrical Characteristics
Characteristics under conditions 7.0 V VSUP 18 V, - 40C TA 125C, GND = 0 V, unless otherwise noted. Typical
values reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic Symbol Min Typ Max Unit
LIN PHYSICAL LAYER
DRIVER CHARACTERISTICS FOR NORMAL SLEW RATE - 20.0 KBIT/SEC ACCORDING TO LIN PHYSICAL LAYER SPECIFICATION(15), (16)
33662L AND 33662S DEVICES
Duty Cycle 1:
THREC(MAX) = 0.744 * VSUP
THDOM(MAX) = 0.581 * VSUP
D1 = tBUS_REC(MIN)/(2 x tBIT), tBIT = 50 µs, 7.0 V VSUP18 V
D1
0.396 — —
%
Duty Cycle 2:
THREC(MIN) = 0.422 * VSUP
THDOM(MIN) = 0.284 * VSUP
D2 = tBUS_REC(MAX)/(2 x tBIT), tBIT = 50 µs, 7.6 V VSUP18 V
D2
— — 0.581
LIN PHYSICAL LAYER
DRIVER CHARACTERISTICS FOR SLOW SLEW RATE - 10.4 KBIT/SEC ACCORDING TO LIN PHYSICAL LAYER SPECIFICATION(15), (16)
33662J DEVICE
Duty Cycle 3:
THREC(MAX) = 0.778 * VSUP
THDOM(MAX) = 0.616 * VSUP
D3 = tBUS_REC(MIN)/(2 x tBIT), tBIT = 96 µs, 7.0 V VSUP18 V
D3
0.417 — —
%
Duty Cycle 4:
THREC(MIN) = 0.389 * VSUP
THDOM(MIN) = 0.251 * VSUP
D4 = tBUS_REC(MAX)/(2 x tBIT), tBIT = 96 µs, 7.6 V VSUP18 V
D4
— — 0.590
LIN PHYSICAL LAYER
DRIVER CHARACTERISTICS FOR FAST SLEW RATE
Fast Bit Rate (Programming Mode) BRFAST — — 100 kBit/s
LIN PHYSICAL LAYER
TRANSMITTER CHARACTERISTICS FOR NORMAL SLEW RATE - 20.0 KBIT/SEC(19)
33662S DEVICE
Symmetry of Transmitter delay(18)
tTRAN_SYM = MAX (tTRAN_SYM60%, tTRAN_SYM40%)
tTRAN_SYM60% = | tTRAN_PDF60% - tTRAN_PDR60% |
tTRAN_SYM40% = | tTRAN_PDF40% - tTRAN_PDR40% |
t
TRAN_SYM -7.25 —7.25
s
Notes
15. Bus load RBUS and CBUS 1.0 nF / 1.0 k, 6.8 nF / 660 , 10 nF / 500 . Measurement thresholds: 50% of TXD signal to LIN signal
threshold defined at each parameter. See Figure 8.
16. See Figure 9.
17. See Figure 10.
18. See Figure 11
19. VSUP from 7.0 to 18 V, bus load RBUS and CBUS 1.0 nF / 1.0 k, 6.8 nF / 660 , 10 nF / 500 . Measurement thresholds: 50% of TXD
signal to LIN signal threshold defined at each parameter. See Figure 8.
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33662
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
LIN PHYSICAL LAYER
RECEIVER CHARACTERISTICS ACCORDING to LIN 2.x and ISO 17987-4:2016 (12V) (20)
33662L AND 33662J AND 33662S DEVICES
Propagation Delay and Symmetry(21)
Propagation Delay of Receiver, tREC_PD = MAX (tREC_PDR, tREC_PDF)
Symmetry of Receiver Propagation Delay, tREC_PDF - tREC_PDR
t
REC_PD
t
REC_SYM
—
- 2.0
—
—
6.0
2.0
s
LIN PHYSICAL LAYER
RECEIVER CHARACTERISTICS WITH TIGHTEN LIMITS(22)
33662S DEVICE
Propagation Delay and Symmetry(23)
Propagation Delay of Receiver, tREC_PD = MAX (tREC_PDR, tREC_PDF)
Symmetry of Receiver Propagation Delay, tREC_PDF - tREC_PDR
t
REC_PD_S
t
REC_SYM_S
—
- 1.3
—
—
5.0
1.3
s
LIN PHYSICAL LAYER
RECEIVER CHARACTERISTICS - LIN SLOPE 1.0 V/ns(22)
33662S DEVICE
Propagation Delay and Symmetry(24)
Propagation Delay of Receiver, tREC_PD _FAST= MAX (tREC_PDR_FAST,
tREC_PDF_FAST)
Symmetry of Receiver Propagation Delay, tREC_PDF_FAST - tREC_PDR_FAST
t
REC_PD_FAST
t
REC_SYM_FAST
—
-
1.3
—
—
6.0
1.3
s
SLEEP MODE AND WAKE-UP TIMINGS
Sleep Mode Delay Time (25)
after EN High to Low to INH High to Low with 100 µA load on INH
t
SD
50 —91
µs
WAKE-UP TIMINGS
Bus Wake-up Deglitcher (Sleep Mode) (26) t
WUF 40 70 100 s
EN Wake-up Deglitcher (27)
EN High to INH Low to High
t
LWUE
— — 15
s
Wake-up Deglitcher (28)
Wake state change to INH Low to High
t
WF
10 48 70
s
TXD TIMING
TXD Permanent Dominant State Delay(29) t TXDDOM 3.75 5.0 6.25 ms
FIRST DOMINANT BIT VALIDATION
First dominate bit validation delay when device in Normal Mode(30) t FIRST_DOM —50 80 µs
Notes
20. VSUP from 7.0 to 18 V, bus load RBUS and CBUS 1.0 nF / 1.0 k, 6.8 nF / 660 , 10 nF / 500 . Measurement thresholds: 50% of TXD
signal to LIN signal threshold defined at each parameter. See Figure 8.
21. See Figure 12.
22. VSUP from 7.0 to 18 V, bus load RBUS and CBUS 1.0 nF / 1.0 k, 6.8 nF / 660 , 10 nF / 500 . Measurement thresholds: 50% of TXD
signal to LIN signal threshold defined at each parameter. See Figure 8.
23. See Figure 12
24. See Figure 13
25. See Figure 25 and 26
26. See Figure 16, 19, and Figure 20
27. See Figure 14, 17, Figure 21, Figure 25 and Figure 26
28. See Figure 15, 18, Figure 25 and Figure 26
29. The LIN is in recessive state and the receiver is still active.
30. See Figure 14, 17, 15, 18, 16, 19 and Figure 24
Table 6. Dynamic Electrical Characteristics (continued)
Characteristics under conditions 7.0 V VSUP 18 V, - 40C TA 125C, GND = 0 V, unless otherwise noted. Typical
values reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic Symbol Min Typ Max Unit
13
33662
ELECTRICAL CHARACTERISTICS
TIMING DIAGRAMS
TIMING DIAGRAMS
Figure 8. Test Circuit for Timing Measurements
FAST BAUD RATE TIMING
EN Low Pulse Duration to Enter in Fast Baud Rate using Toggle Function (31)
EN High to Low and Low to High
t
1
— — 45
s
TXD Low Pulse Duration to Enter in Fast Baud Rate using Toggle Function (31) t
212.5 — — µs
Delay Between EN Falling Edge and TXD Falling Edge to Enter in Fast Baud
Rate Using Toggle Function (31) t
3
12.5 — —
µs
Delay Between TXD Rising Edge and EN Rising Edge to Enter in Fast Baud
Rate Using Toggle Function (31) t
4
12.5 — —
µs
RXD Low Level duration after EN rising edge to validate the Fast Baud Rate
entrance(31) t
5
1.875 6.25
µs
Notes
31. See Figure 22 and 23
Table 6. Dynamic Electrical Characteristics (continued)
Characteristics under conditions 7.0 V VSUP 18 V, - 40C TA 125C, GND = 0 V, unless otherwise noted. Typical
values reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic Symbol Min Typ Max Unit
LIN
GND C0
R0
VSUP
VSUP
Note R0 and C0: 1.0 k/1.0 nF, 660 /6.8 nF, and 500 /10 nF.
TXD
RXD
14
33662
ELECTRICAL CHARACTERISTICS
TIMING DIAGRAMS
Figure 9. LIN Timing Measurements for Normal Baud Rate (33662L and 33662S)
Figure 10. LIN Timing Measurements for Slow Baud Rate (33662J)
TXD
LIN
RXD
TBIT TBIT
tBUS_DOM(MAX) tBUS_REC(MIN)
tREC_PDF(1)
74.4% V
SUP
42.2% VSUP
58.1% VSUP
28.4% VSUP
tBUS_REC(MAX)
VLIN_REC
tBUS_DOM(MIN)
RXD
Output of receiving Node 1
Output of receiving Node 2
THREC(MAX)
THDOM(MAX)
THREC(MIN)
THDOM(MIN)
Thresholds of
receiving node 1
Thresholds of
receiving node 2
tREC_PDR(1)
tREC_PDF(2)
tREC_PDR(2)
TXD
LIN
RXD
TBIT TBIT
tBUS_DOM(MAX) tBUS_REC(MIN)
tREC_PDF(1)
77.8% V
SUP
38.9% VSUP
61.6% VSUP
25.1% VSUP
tBUS_REC(MAX)
VLIN_REC
tBUS_DOM(MIN)
RXD
Output of receiving Node 1
Output of receiving Node 2
THREC(MAX)
THDOM(MAX)
THREC(MIN)
THDOM(MIN)
Thresholds of
receiving node 1
Thresholds of
receiving node 2
tREC_PDR(1)
tREC_PDF(2)
tREC_PDR(2)
15
33662
ELECTRICAL CHARACTERISTICS
TIMING DIAGRAMS
Figure 11. LIN Transmitter Timing for 33662S
Figure 12. LIN Receiver Timing
Figure 13. LIN Receiver Timing LIN slope 1V/ns
VBUSREC
VBUSDOM
VSUP
LIN BUS SIGNAL
tTRAN_PDF60%
TXD
VLIN_REC
40% VSUP
60% VSUP
tTRAN_PDF40%
tTRAN_PDR40%
tTRAN_PDR60%
VBUSREC
VBUSDOM
VSUP
LIN BUS SIGNAL
tREC_PDR
tREC_PDF
RXD
VLIN_REC
40% VSUP
60% VSUP
VBUSREC
VBUSDOM
VSUP
LIN BUS SIGNAL
tREC_PDR_FAST
tREC_PDF_FAST
RXD
VLIN_REC
40% VSUP
60% VSUP
1V/ns
16
33662
ELECTRICAL CHARACTERISTICS
FUNCTIONAL DIAGRAMS
FUNCTIONAL DIAGRAMS
Figure 14. EN Pin Wake-up with TXD High
Figure 15. WAKE Pin Wake-up with TXD High
Figure 16. LIN Bus Wake-up with TXD High
Figure 17. EN Pin Wake-up with TXD Low
INH
EN
LIN
tLWUE
RXD (High Z)
TXD
Normal Mode
WAKE
tFIRST_DOM
WAKE
tWF
INH
EN
LIN
RXD
(High Z) Awake Mode
TXD
WAKE after deglitcher
tFIRST_DOM
INH
EN
LIN
VBUSWU
t
WUF
RXD (High Z)
Awake Mode
TXD
WAKE
tFIRST_DOM
INH
EN
LIN
tLWUE
RXD (High Z)
TXD
Normal Mode
WAKE
tFIRST_DOM
17
33662
ELECTRICAL CHARACTERISTICS
FUNCTIONAL DIAGRAMS
Figure 18. WAKE Pin Wake-up with TXD Low Figure 19. LIN Bus Wake-up with TXD Low
Figure 20. LIN Bus Wake-up with LIN bus in Dominant During the Preparation to Sleep Mode
WAKE
tWF
TXD
INH
EN
LIN
RXD
(High Z) Awake Mode
WAKE after deglitcher
tFIRST_DOM
INH
EN
LIN
VBUSWU
t
WUF
RXD (High Z)
Awake Mode
TXD
WAKE
tFIRST_DOM
INH
EN
LIN
t>t
WUF
RXD (High Z)
TXD
WAKE
tSD
Sleep Mode
Preparation to Sleep Mode
Device in
Communication Mode
Awake Normal Mode
mode
No wake-up
No communication available
LIN wake-up event not take into
No communication available
account Wake & LIN wake-up events
allowed
18
33662
ELECTRICAL CHARACTERISTICS
FUNCTIONAL DIAGRAMS
Figure 21. EN Pin Deglitcher
Figure 22. Fast Baud Rate Selection (Toggle Function)
Figure 23. Fast Baud Rate Mode Exit (back to Normal or Slow slew rate)
EN pin
EN internal signal
t
LWUE
t
LWUE
EN internal signal
EN pin
t < t
LWU
E
EN internal signal
EN pin
t < t
LWU
E
5V
5V
TXD
EN t1 (45 s)
Fast Baud Rate entrance
LIN
RXD t5
Fast Baud Rate validation
t2 (12.5 s)
t4 (12.5 s)
t
3
(12.5
s)
TXD
EN t1 (45 s)
Exit Fast Baud Rate
t2 (12.5 s)
t4 (12.5 s)
t
3
(12.5
s)
LIN
RXD
RXD stays High for Normal or Slow mode validation
19
33662
ELECTRICAL CHARACTERISTICS
FUNCTIONAL DIAGRAMS
Figure 24. Power Up and Down Sequences
Figure 25. Sleep Mode Sequence
INH
EN
LIN
RXD
TXD
INH
EN
LIN
RXD
TXD
VSUP
POR (3.5-5.3 V) VSUP
VUVL
Awake Mode
Normal Mode
(High Z)
(High Z)
(High or Low)
160 µs
*: this parameter is guaranteed by design
(High or Low)
(High or Low)
POR (3.5-5.3 V)
tFIRST_DOM
TXD
EN
t
SD
Sleep
Preparation to Sleep Mode
Device in
INH
WAKE
LIN
RXD
(High Z)
Communication Mode
No communication allowed
LIN wake-up event not take
into
t
LWUE
WAKE after deglitcher
t
WF
Mode
account
20
33662
ELECTRICAL CHARACTERISTICS
FUNCTIONAL DIAGRAMS
Figure 26. Examples of Sleep Mode Sequences
TXD
EN
t < tSD
Awake Mode
Preparation to
Device in
INH
WAKE
Sleep Mode
t = tWF
LIN
RXD
The device does not enter in Sleep Mode
(High Z)
(case 1)
TXD
EN
Awake Mode
Device in
INH
WAKE
t tWF
LIN
RXD
The device does not enter in Sleep Mode
(High Z)
(case 2)
Communication Mode Communication Mode
Sleep Mode (t <
tSD)
Preparation to
tLWUE
WAKE after deglitcher
(case 1)
tLWUE
WAKE after deglitcher
(case 2)
TXD
EN
Awake Mode
Device in
INH
WAKE
t tWF
LIN
RXD
(High Z)
(case 3)
Communication Mode
Sleep Mode
Preparation to
tLWUE
WAKE after deglitcher
(case 3)
No communication
allowed
No communication
allowed
t tSD
Sleep
Mode
No communication
allowed
21
33662
FUNCTIONAL DESCRIPTION
INTRODUCTION
FUNCTIONAL DESCRIPTION
INTRODUCTION
The 33662L, 33662J, and 33662S are a physical layer
component dedicated to automotive LIN sub-bus
applications.
The 33662L and 33662S features include a 20 kbps baud
rate and the 33662J a 10 kbps baud rate. They integrate fast
baud rate for test and programming modes, excellent ESD
robustness, immunity against disturbance, and radiated
emission performance. They have safe behavior in case of a
LIN bus short-to-ground, or a LIN bus leakage during low
power mode.
Digital inputs are 5.0 and 3.3 V compatible without any
external required components.
The INH output can be used to control an external voltage
regulator, or to drive a LIN bus pull-up resistor.
FUNCTIONAL PIN DESCRIPTION
POWER SUPPLY PIN (VSUP)
The VSUP supply pin is the power supply pin for the
33662L, or 33662J, or 33662S. In an application, the pin is
connected to a battery through a serial diode, for reverse
battery protection. The DC operating voltage is from 7.0 to
18 V. This pin can sustain a standard automotive load dump
condition up to 40 V. To avoid a false bus message, an
undervoltage on VSUP disables the transmission path (from
TXD to LIN) when VSUP falls below 6.7 V. Supply current in
Sleep mode is typically 6.0 µA.
GROUND PIN (GND)
In case of a ground disconnection at the module level, the
33662L, 33662J, and 33662S do not have significant current
consumption on the LIN bus pin when in the recessive state.
LIN BUS PIN (LIN)
The LIN pin represents the single-wire bus transmitter and
receiver. It is suited for automotive bus systems, and is
compliant with LIN bus specifications 1.3, 2.0, 2.1, 2.2,
2.2A, SAE J2602-2 and ISO 17987-4:2016 (12 V).
The LIN interface is only active during Normal mode (See
Figure 27).
Figure 27. LIN Interface
Transmitter Characteristics
The LIN driver is a low side MOSFET with internal
overcurrent thermal shutdown. An internal pull-up resistor
with a serial diode structure is integrated so no external pull-
up components are required for the application in a slave
node. An additional pull-up resistor of 1.0 k must be added
when the device is used in the master node.
The LIN pin exhibits no reverse current from the LIN bus
line to VSUP, even in the event of a GND shift or VSUP
disconnection. The 33662 is tested according to the
application conditions (i.e. in normal mode and recessive
state during communication).
The transmitter has a 20 kbps baud rate (Normal baud
rate) for the 33662L and 33662S devices, or 10 kbps baud
rate (Slow baud rate) for the 33662J device. As soon as the
device enters in Normal mode, the LIN transmitter will be able
to send the first dominant bit only after the tFIRST_DOM delay.
tFIRST_DOM delay has no impact on the receiver. The receiver
will be enabled as soon as the device enters in Normal mode.
TXD
RXD
35µA
LIN Driver
LIN
VSUP
EN_sleep
INH_ON
Slope Control
Receiver
725 k30 k
INH
VSUP Undervoltage
LIN overtemperature
TXD Dominant
LIN Wake up
EN X 1
INH overtemperature
INH switched off &
LIN transmitter and receiver disabled
OR
22
33662
FUNCTIONAL DESCRIPTION
FUNCTIONAL PIN DESCRIPTION
Receiver Characteristics
The receiver thresholds are ratiometric with the device
supply pin.
If the VSUP voltage goes below the VSUP undervoltage
threshold (VUVL, VUVH), the bus enters into a recessive state
even if communication is sent to TXD.
In case of LIN thermal shutdown, the transceiver and
receiver are in recessive and INH turned off. When the
temperature is below the TLINSD, INH and LIN will be
automatically enabled.
The Fast Baud Rate selection is reported by the RXD pin.
Fast Baud Rate is activated by the toggle function (See
Figure 22). At the end of the toggle function, just after EN
rising edge, RXD pin is kept low for t5 to flag the Fast Baud
Rate entry (See Figure 22).
To exit the Fast Baud Rate and return in Normal or Slow
baud rate, a toggle function is needed. At the end of the
toggle function, the RXD pin stays high to signal Fast Baud
Rate exit (See Figure 23). The device enters into Fast Baud
Rate at room and hot temperature.
DATA INPUT PIN (TXD)
The TXD input pin is the MCU interface to control the state
of the LIN output. When TXD is LOW (dominant), LIN output
is LOW; when TXD is HIGH (recessive), the LIN output
transistor is turned OFF. TXD pin thresholds are 3.3 V and
5.0 V compatible.
This pin has an internal pull-up current source to force the
recessive state if the input pin is left floating.
If the pin stays low (dominant sate) more than 5.0 ms
(typical value), the LIN transmitter goes automatically into
recessive state.
DATA OUTPUT PIN (RXD)
RXD output pin is the MCU interface, which reports the
state of the LIN bus voltage.
In Normal or Slow baud rate, LIN HIGH (recessive) is
reported by a high voltage on RXD; LIN LOW (dominant) is
reported by a low voltage on RXD.
The RXD output structure is a tristate output buffer (See
Figure 28).
Figure 28. RXD Interface
The RXD output pin is the receiver output of the LIN
interface. The low level is fixed. The high level is dependent
on EN voltage. If EN is set at 3.3 V, RXD VOH is 3.3 V. If EN
is set at 5.0 V, RXD VOH is 5.0 V.
In Sleep mode, RXD is high-impedance. When a wake-up
event is recognized from the WAKE pin or from the LIN bus
pin, RXD is pulled LOW to report the wake-up event. An
external pull-up resistor may be needed.
ENABLE INPUT PIN (EN)
EN input pin controls the operation mode of the interface.
If EN = 1, the interface is in Normal mode, TXD to LIN after
tFIRST_DOM delay and LIN to RXD paths are both active. EN
pin thresholds are 3.3 V and 5.0 V compatible. RXD VOH
level follows EN pin high level. The device enters the Sleep
mode by setting EN LOW for a delay higher than tSD (70 µs
typ. value) and if the WAKE pin state doesn’t change during
this delay (see Figure 25).
A combination of the logic levels on the EN and TXD pins
allows the device to enter into the Fast Baud Rate mode of
operation (see Figure 22).
INHIBIT OUTPUT PIN (INH)
The INH output pin is connected to an internal high side
power MOSFET. The pin has two possible main functions. It
can be used to control an external switchable voltage
regulator having an inhibit input. It can also be used to drive
the LIN bus external resistor in the master node application,
thanks to its high drive capability. This is illustrated in
Figure 30 and 31.
In Sleep mode, INH is turned OFF. If a voltage regulator
inhibit input is connected to INH, the regulator will be
disabled. If the master node pull-up resistor is connected to
INH, the pull-up resistor will be unpowered and left floating.
In case of a INH thermal shutdown, the high side is turned
off and the LIN transmitter and receiver are in recessive state.
An external 10 to 100 pF capacitor on INH pin is advised
in order to improve EMC performances.
RXD
EN
200 k
X 1
EN_RXD
LIN
VSUP
Slope
Cont rol
Recei ver
30 k
LIN_RXD
23
33662
FUNCTIONAL DESCRIPTION
FUNCTIONAL PIN DESCRIPTION
WAKE INPUT PIN (WAKE)
The WAKE pin is a high voltage input used to wake-up the
device from the Sleep mode. WAKE is usually connected to
an external switch in the application.
The WAKE pin has a special design structure and allows
wake-up from both HIGH to LOW or LOW to HIGH
transitions. When entering into Sleep mode, the device
monitors the state of the WAKE pin and stores it as a
reference state. The opposite state of this reference state will
be the wake-up event used by the device to enter again into
Normal mode.
If the Wake pin state changes during the Sleep mode
Delay Time (tSD) or before EN goes low with a deglitcher
lower than tWF, the device will not enter the Sleep mode, but
will go into Awake mode (See Figure 26).
An internal filter is implemented to avoid a false wake-up
event due to parasitic pulses (See Figure 15 and 18). WAKE
pin input structure exhibits a high-impedance, with extremely
low input current when voltage at this pin is below 27 V. Two
serial resistors should be inserted in order to limit the input
current mainly during transient pulses and ESD. The total
recommended resistor value is 33 k. An external 10 to
100 nF capacitor is advised for better EMC and ESD
performances.
Important The WAKE pin should not be left open. If the
wake-up function is not used, WAKE should be connected to
ground to avoid a false wake-up.
24
33662
FUNCTIONAL DEVICE OPERATION
OPERATIONAL MODES
FUNCTIONAL DEVICE OPERATION
OPERATIONAL MODES
As described below and depicted in Figure 29 and
Table 7, the 33662L, 33662J, and 33662S have two
operational modes, Normal and Sleep. In addition, there are
two transitional modes: Awake mode and Preparation to
Sleep mode. The Awake mode allows the device to go into
Normal mode. The Preparation to Sleep mode allows the
device to go into Sleep mode.
NORMAL OR SLOW BAUD RATE
In the Normal mode, the LIN bus can transmit and receive
information.
The 33662L and 33662S (20 kbps) have a slew rate and
timing compatible with Normal Baud Rate and LIN protocol
specifications 1.3, 2.0, 2.1, 2.2, 2.2A and ISO17987-3:2016.
The 33662J (10 kbps) has a slew rate and timing
compatible with Low Baud Rate.
From Normal mode, the three devices can enter into Fast
Baud Rate (Toggle function).
FAST BAUD RATE
In Fast Baud Rate, the slew rate is around 10 times faster
than the Normal Baud Rate. This allows very fast data
transmission (> 100 kbps) -- for instance, for electronic
control unit (ECU) tests and microcontroller program
download. The bus pull-up resistor might be adjusted to
ensure a correct RC time constant in line with the high baud
rate used.
Fast Baud Rate is entered via a special sequence (called
toggle function) as follows:
1- EN pin set LOW while TXD is HIGH
2- TXD stays HIGH for 12.5 µs min
3- TXD set LOW for 12.5 µs min
4- TXD pulled HIGH for 12.5 µs min
5- EN pin set LOW to HIGH while TXD still HIGH
The device enters into the Fast Baud Rate if the delay
between Step 1 to Step 5 is 45 µs maximum. The toggle
function is described in Figures 22. Once in Fast Baud Rate,
the same toggle function just described previously is used to
bring the device back into Normal Baud Rate.
Fast Baud Rate selection is reported to the MCU by RXD
pin. Once the device enters in this Fast Baud Rate, the RXD
pin goes at low level for t5. When the device returns in Normal
Baud Rate with the same toggle function, the RXD pin stays
high. Both sequences are illustrated in Figures 22 and 23.
PREPARATION TO SLEEP MODE
To enter the Preparation to Sleep mode, EN must be low
for a delay higher than tLWUE.
If the WAKE pin state doesn’t change during tSD and tLWUE
then the 33662 goes into Sleep mode.
If the WAKE pin state changes during tSD and if tWF is
reached after end of tSD then the device goes into Sleep
mode after the end of tSD timing.
If the WAKE pin state changes during tSD and tWF delay
has been reached before the end of tSD then the device goes
into Awake mode.
If the WAKE pin state changes before tSD and the delay
tWF ends during tSD then the device goes into Awake mode.
If EN goes high for a delay higher than tLWUE, the 33662
returns to Normal mode.
SLEEP MODE
To enter into Sleep mode, EN must be low for a delay
longer than tSD and the Wake pin must stay in the same state
(High or Low) during this delay.
The device conditions to not enter in Sleep mode but enter
in Awake mode are detailed in the Preparation into Sleep
mode chapter. See Figure 26.
In Sleep mode, the transmission path is disabled and the
device is in Low Power mode. Supply current from VSUP is
very low (6.0 µA typical value). Wake-up can occur from LIN
bus activity, from the EN pin and from the WAKE input pin. If
during the preparation to Sleep mode delay (tSD), the LIN bus
goes low due to LIN network communication, the device still
enters into the Sleep mode. The device can be awakened by
a recessive to dominant start, followed by a dominant to
recessive state after t > tWUF.
After a Wake-up event, the device enters into Awake
mode.
In the Sleep mode, the internal 725 kOhm pull-up resistor
is connected and the 30 kOhm is disconnected.
DEVICE POWER-UP (Awake Transitional Mode)
At power-up (VSUP rises from zero), when VSUP is above
the Power On Reset voltage, the device automatically
switches after a 160 µs delay time to the Awake transitional
mode. It switches the INH pin to a HIGH state and RXD to a
LOW state. See Figure 24.
DEVICE WAKE-UP EVENTS
The 33662L, 33662J, and 33662S can be awakened from
Sleep mode by three wake-up events:
• Remote wake-up via LIN bus activity
• Via the EN pin
• Toggling the WAKE pin
Remote Wake from LIN Bus (Awake Transitional Mode)
The device is awakened by a LIN dominant pulse longer
than tWUF. Dominant pulse means: a recessive to dominant
transition, wait for t > tWUF, then a dominant to recessive
25
33662
FUNCTIONAL DEVICE OPERATION
OPERATIONAL MODES
transition. This is illustrated in Figure 16 and 19. Once the
wake-up is detected (during the dominant to recessive
transition), the device enters into Awake mode, with INH
HIGH and RXD pulled LOW.
Once in the Awake mode, the EN pin has to be set to 3.3 V
or 5.0 V (depending on the system) to enter into Normal
mode. Once in Normal mode, the device has to wait tfirst_dom
delay before transmitting the first dominant bit.
Wake-up from EN pin
The device can be waked-up by a LOW to HIGH transition
of the EN pin. When EN is switched from LOW to HIGH and
stays HIGH for a delay higher than tLWUE, the device is
awakened and enters into Normal mode. See Figure 14 and
17. Once in Normal mode, the device has to wait tFIRST_DOM
delay before transmitting the first dominant bit.
Wake-up from WAKE Pin (Awake Transitional Mode)
Just before entering the Sleep mode, the WAKE pin state
is stored. A change in the level longer than the deglitcher time
(70 µs maximum) will generate a wake-up, and the device
enters into the Awake Transitional mode, with INH HIGH and
RXD pulled LOW. See Figure 15 and 18. The device goes
into Normal mode when EN is switched from LOW to HIGH
and stays HIGH for a delay higher than tLWUE. Once in
Normal mode, the device has to wait tFIRST_DOM delay before
transmitting the first dominant bit.
FAIL-SAFE FEATURES
The table below describes the 33662 protections.
BLOCK FAULT FUNCTIONAL
MODE
CONDITION RESPONSE RECOVERY
CONDITION
RECOVERY
FUNCTIONALITY MODE
Power
Supply
Power on Reset
(POR) All modes VSUP < 3.5 V (min)
then power up No internal supplies Condition gone
Device goes in Awake
mode whatever the
previous device mode
INH INH Thermal
Shutdown
Normal,
Awake &
Preparation to
Sleep modes
Temperature >
160 °C (typ)
INH high side turned
off. LIN transmitter
and receiver in
recessive state
Condition gone Device returns in same
functional mode
LIN
VSUP undervoltage
Normal
VSUP < VUVL
LIN transmitter in
recessive state Condition gone Device returns in same
functional mode
TXD Pin Permanent
Dominant
TXD pin low for more
than 5.0 ms (typ)
LIN transmitter in
recessive state Condition gone Device returns in same
functional mode
LIN Thermal
Shutdown
Normal mode Temperature >
160 °C (typ)
LIN transmitter and
receiver in recessive
state
INH high side turned
off
Condition gone Device returns in same
functional mode
26
33662
FUNCTIONAL DEVICE OPERATION
OPERATIONAL MODES
Figure 29. Operational and Transitional Modes State Diagram
COMPATIBILITY WITH LIN1.3
Following the Consortium LIN specification Package,
Revision 2.1, November 24, 2006, Chapter 1.1.7.1
Compatibility with LIN1.3, page 15.
The LIN 2.x / ISO 17987-4:2016 (12 V) physical layer is
backward compatible with the LIN 1.3 physical layer, but
not the other way around. The LIN 2.x / ISO
17987-4:2016 (12 V) physical layer sets harder
requirements, i.e. a node using the LIN 2.x / ISO
17987-4:2016 (12 V) physical layer can operate in a LIN 1.3
cluster.
Table 7. Explanation of Operational and Transitional Modes State Diagram
Operational/
Transitional LIN INH EN TXD RXD
Sleep Recessive state, driver off with
725 k pull-up
OFF
(low)
LOW XHigh-impedance.(36)
HIGH if external pull-up to VDD
Awake Recessive state, driver off.
725 k pull-up active
ON
(high)
LOW XLOW.
If external pull-up, HIGH-to-LOW
transition reports wake-up
Preparation to
Sleep mode
Recessive state, driver off with
725 k pull-up
ON
(high)
LOW XHigh-impedance. HIGH if
external pull-up to VDD
Normal mode Driver active. 30 k pull-up active
Normal Baud Rate for 33662L
and 33662S
Slow Baud Rate for 33662J
Fast Baud Rate (> 100 kbps) for
33662L, 33662S, & 33662J
ON
(high)
HIGH LOW to drive LIN bus in dominant
HIGH to drive LIN bus in recessive
Report LIN bus state:
•Low LIN bus dominant
•High LIN bus recessive
X = Don’t care.
Notes
36. Only applies to 33662B. The 33662 will have a leakage current of typically 95 A if a pull-up resistor is implemented.
Power Up
Awake
Sleep
Preparation
to Sleep
Fast Baud
Rate (10x)
Normal Baud Rate for
33662L and 33662S
or
Slow Baud Rate
for 33662J
VSUP > VPOR
LIN bus dominant pulse
for t > tWUF(31)
or
WAKE pin state
changes for t > tWF(32)
EN HIGH to LOW for t > tLWUE
EN LOW to HIGH for t > tLWUE
EN HIGH to LOW
for t > tLWUE
EN LOW to HIGH
for t > tLWUE
EN LOW to HIGH for t > tLWUE
Toggle
Function(33)
Toggle
Function(33)
Internal WAKE(30) state
changes during tSD
Internal WAKE(30) state
doesn’t change during tSD
Notes
32. Internal WAKE is the WAKE signal filtered by tWF (WAKE deglitcher)
33. See Figure 15 and Figure 18
34. See figures Figure 14 and Figure 17
35. The Toggle Function is guaranteed at ambient and hot temperature
27
33662
TYPICAL APPLICATIONS
TYPICAL APPLICATIONS
The 33662 can be configured for several applications.
Figure 30 and 31 show master and slave node applications.
An additional pull-up resistor of 1.0 k in series with a diode
between the INH and LIN pins must be added when the
device is used in the master node.
Figure 30. Master Node Typical Application
Figure 31. Slave Node Typical Application
WAKE
TXD
RXD
EN
200 k
X 1
35µA
EN_RXD
Control
Unit
INH
LIN
VSUP
GND
EN_sleep
RXD_Int
LIN_en
TXD_Int
INH_ON
Slope
Control
Receiver
725 k30 k
*
VDD
RXD
TXD
I/O
MCU
VDD
Regulator
12V
5V or
3.3V
VDD
D1 C1
22µF
C2
100nF
R2
18k
R4
2.2k
R3
18k
VBAT
LIN Bus
C3
100nF
D2
R1
1.0 k
*: Optional. 2.2k if implemented
*
*: Optional. 2.2k if implemented
WAKE
TXD
RXD
EN
200 k
X 1
35µA
EN_RXD
Control
Unit
INH
LIN
VSUP
GND
EN_sleep
RXD_Int
LIN_en
TXD_Int
INH_ON
Slope
Control
Receiver
725 k30 k
*
VDD
RXD
TXD
I/O
MCU
VDD
Regulator
12V
5V or
3.3V
VDD
D1 C1
22µF
C2
100nF
R2
18k
R4
2.2k
R3
18k
VBAT
LIN Bus
C3
100nF
*
28
33662
PACKAGING PACKAGE
DIMENSIONS
PACKAGING
PACKAGE DIMENSIONS
EF SUFFIX
8-PIN
98ASB42564B
REVISION V
29
33662
PACKAGING
PACKAGE DIMENSIONS
EF SUFFIX
8-PIN
98ASB42564B
REVISION V
30
33662
REVISION HISTORY
PACKAGE DIMENSIONS
REVISION HISTORY
REVISION DATE DESCRIPTION OF CHANGES
3.0 8/2011 Initial release
4.0 9/2011 Changed the PC part numbers in the Ordering Information Table to MC
5.0 1/2014 •Added MC33662BLEF, MC33662BJEF, and MC33662BSEF to the ordering information.
• Updated Device Variations table
• Changed LIN dominant level with 500 680 and 1.0 k load on the LIN bus from 0.3 to
0.25
• Changed LIN Wake-up Threshold from Sleep Mode from 5.0 to 5.3
• MC33662LEF/MC33662SEF/MC33662JEF INH pin HBM level 8.0 KV removed to reflect
performance
6.0 1/2014 • Corrected MC33662BLEF, MC33662BJEF, and MC33662BSEF to PC in the ordering
information.
• Minor corrections to format.
7.0 1/2014 • Changed MC33662BLEF, MC33662BJEF, and MC33662BSEF to MC in the ordering
information. Now qualified.
8.0 12/2018• Compliant with LIN 2.0, LIN 2.1, LIN 2.2, LIN 2.2A SAE J2602 and ISO 17987-4:2016
(12 V).
Document Number: MC33662
Rev. 8.0
12/2018
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