APTG
T
600U120D4
APTGT600U120D4 – Rev 0 January, 2004
APT website – http://www.advancedpower.com
1
-
3
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200 V
T
C
= 25°C 880
I
C
Continuous Collector Current T
C
= 80°C 600
I
CM
Pulsed Collector Current T
C
= 25°C 1500
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 2500 W
SCSOA Short Circuit Safe Operating Area T
j
= 125°C 2000A@900V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
3
5
2
1
53
4
12
VCES = 1200V
IC = 600A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT
®
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance
- M6 connectors for power
- M4 connectors for signal
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
Single switch
Trench IGBT
®
Power Module
APTG
T
600U120D4
APTGT600U120D4 – Rev 0 January, 2004
APT website – http://www.advancedpower.com
2
-
3
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
BV
CES
Collector - Emitter Breakdown Voltage V
GE
= 0V, I
C
= 24mA
1200
V
I
CES
Zero Gate Voltage Collector Current V
GE
= 0V, V
CE
= 1200V 16 mA
T
j
= 25°C 1.7 2.1
V
CE(on)
Collector Emitter on Voltage V
GE
= 15V
I
C
= 600A T
j
= 125°C 2.0 V
V
GE(th)
Gate Threshold Voltage V
GE
= V
CE
, I
C
= 24mA 5.0 5.8 6.5 V
I
GES
Gate – Emitter Leakage Current V
GE
= 20V, V
CE
= 0V
1200
nA
Dynamic Characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
C
ies
Input Capacitance 40
C
oes
Output Capacitance 2.4
C
res
Reverse Transfer Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1MHz 2
nF
T
d(on)
Turn-on Delay Time 250
T
r
Rise Time 90
T
d(off)
Turn-off Delay Time 550
T
f
Fall Time
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 600A
R
G
= 1.1Ω 130
ns
T
d(on)
Turn-on Delay Time 300
T
r
Rise Time 100
T
d(off)
Turn-off Delay Time 650
T
f
Fall Time
Inductive Switching (125°C)
V
GE
= ±15V
V
Bus
= 600V
I
C
= 600A
R
G
= 1.1Ω 180
ns
Reverse diode ratings and characteristics
Symbol
Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 1.6 2.1
V
F
Diode Forward Voltage I
F
= 600A
V
GE
= 0V T
j
= 125°C 1.6 V
E
rec
Reverse Recovery Energy I
F
= 600A
V
R
= 600V
di/dt =900A/µs T
j
= 125°C 48 mJ
T
j
= 25°C 56
Q
rr
Reverse Recovery Charge I
F
= 600A
V
R
= 600V
di/dt =900A/µs
T
j
= 125°C 112 µC
Thermal and package characteristics
Symbol
Characteristic Min Typ Max Unit
IGBT 0.05
R
thJC
Junction to Case Diode 0.075 °C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz 2500 V
T
J
Operating junction temperature range -40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 125
°C
M6 3 5
Torque Mounting torque M4 1 2 N.m
Wt Package Weight 420 g
APTG
T
600U120D4
APTGT600U120D4 – Rev 0 January, 2004
APT website – http://www.advancedpower.com
3
-
3
Package outline
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
