* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
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1/127
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
1 to 4-Cell Li-Ion Battery Manager
For Application Processors
BD99954MWV, BD99954GW
General Description
BD99954 is a Battery Management LSI for 1-4 cell
Lithium-Ion secondary battery, and available in a 40pin
0.40 mm pitch 5.0 mm x 5.0 mm QFN package and small
41-ball 0.4mm pitch 2.6mm x 3.0mm Wafer-Level CSP
package which is designed to meet high degree demands
for space-constraint equipment such as Low profile
Notebook PC, Tablets and other applications.
BD99954 provides a Dual-source Battery Charger, two
port BC1.2 detection and a Battery Monitor with several
alarm(INT#, PROCHOT#) outputs
Features
Dual-source Battery Charger
High efficiency Step-Up/Down switching charger for
1-4 cell Li-Ion/Li-poly battery
Two separate input sources for USB-VBUS and DC
adapter.
Two port BC1.2 detectors.
JEITA compliant charging profile
Programmable parameters for Preconditioning, Pre-
charge current, and Fast-charge current
Programmable charging voltage
Programmable charge current
Programmable Switching Frequency: 600kHz to
1.2MHz
Support USB BCS 1.2, ACA, ID pin, OTG
USB-VBUS Over Voltage Protection
Over Voltage Battery Protection
Battery Short Circuit Detection
Power Path Management with charge pump gate
driver
Flexibility power path control
Reverse Buck/Boost Option for USB/USB-PD
Bias voltage output for the external thermistor
PMON output
PROCHOT# output
Support Inhibit / Autonomous Charging
Battery Learn Function
Input Operating Range: 3.8V to 25V
Voltage Measurement for Thermistor.
Bias voltage output for the external thermistor.
SMBus Interface (Clock up friendly I2C) for Host
communication
Embedded OTPROM for initial settings
Packages
Pitch
W
x
D
x
H
UQFN040V5050
0.4mm
5.0mm
x
5.0mm
x
1.0mm
UCSP55M3C
6 x 7balls
0.4mm
2.6mm
x
3.0mm
x
0.62mm
UQFN040V5050
UCSP55M3C
Applications
Ultrabook
Notebook PC
Ultra-mobile PC
Tablet PC
Structure
Silicon Monolithic Integrated Circuit
Line up matrix
Parts No.
Package
BD99954MWV
UQFN040V5050
BD99954GW
UCSP55M3C
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
2/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
Contents
Notation .................................................................................................................................................................... 3
Reference ................................................................................................................................................................. 3
1. INTRODUCTION ................................................................................................................. 4
2. SIGNAL DESCRIPTION ...................................................................................................... 5
3. PIN CONFIGURATION ........................................................................................................ 6
4. ABSOLUTE MAXIMUM RATING ........................................................................................ 7
5. THERMAL RESISTANCE (NOTE 1) ........................................................................................ 7
6. RECOMMENDED OPERATING CONDITION ..................................................................... 7
7. FUNCTION DESCRIPTIONS ............................................................................................... 8
7.1. Block Diagram ............................................................................................................................................ 8
7.2. External Characteristics for Battery Charger .......................................................................................... 9
7.3. DC Input & Over Voltage Protection (OVP) ............................................................................................ 10
7.4. USB Detection ........................................................................................................................................... 11
7.5. DC/DC Converter ...................................................................................................................................... 12
7.6. Charger ...................................................................................................................................................... 14
7.7. Reverse DC/DC Converter ....................................................................................................................... 16
7.8. 12-bit ADC ................................................................................................................................................. 17
7.9. Power On ................................................................................................................................................... 18
8. CONTROL SPECIFICATION ............................................................................................. 20
8.1. SMBus Communication ........................................................................................................................... 20
8.2. SMBus Protocols ...................................................................................................................................... 20
8.3. Command Code ........................................................................................................................................ 22
8.4. Battery Charger Commands Description ............................................................................................... 26
8.5. Extended Commands Description .......................................................................................................... 29
8.6. Resister Default Value ............................................................................................................................ 115
9. I/O EQUIVALENT CIRCUIT DIAGRAM .......................................................................... 118
10. ORDERING INFORMATION ............................................................................................ 121
11. MARKING DIAGRAMS ................................................................................................... 121
12. PHYSICAL DIMENSION TAPE AND REEL INFORMATION .......................................... 122
13. OPERATIONAL NOTES .................................................................................................. 124
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
3/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
Notation
Category
Notation
Description
Unit
V
Volt (Unit of voltage)
A
Ampere (Unit of current)
Ω, Ohm
Ohm (Unit of resistance)
F
Farad (Unit of capacitance)
deg., degree
degree Celsius (Unit of Temperature)
Hz
Hertz (Unit of frequency)
s (lower case)
second (Unit of time)
Min
minute (Unit of time)
b, bit
bit (Unit of digital data)
B, byte
1 byte = 8 bits
Unit prefix
M, mega-, mebi-
220 = 1,048,576 (used with “bit” or “byte”)
M, mega-, million-
106 = 1,000,000 (used with “Ω” or “Hz”)
K, kilo-, kibi-
210 = 1,024 (used with “bit” or “byte”)
k, kilo-
103 = 1,000 (used with “Ω” or “Hz”)
m, milli-
10-3
μ, micro-
10-6
n, nano-
10-9
p, pico-
10-12
Numeric value
xxh, xxH
Hexadecimal number.
“x”: any alphanumeric of 0 to 9 or A to F.
Xxb
Binary number; “b” may be omitted.
“x”: a number, 0 or 1
“_” is used as a nibble (4-bit) delimiter.
(e.g. “0011_0101b” = “35h”)
Address
#xxh
Address in a hexadecimal number.
“x”: any alphanumeric of 0 to 9 or A to F.
Data
bit[n]
n-th single bit in the multi-bit data.
bit[n:m]
Bit range from bit[n] to bit[m].
Signal level
“H”, High
High level (over VIH or VOH) of logic signal.
“L”, Low
Low level (under VIL or VOL) of logic signal.
“Z”, “Hi-Z”
High impedance state of 3-state signal.
Reference
Name
Reference Document
Release Date
Publisher
I2C-bus
“UM10204: I2C-bus specification and user manual Rev. 4”
Feb. 13, 2012
NXP Semiconductors
SMBus
System Management Bus (SMBus) Specification 3.0
Dec. 20, 2014
SBS-IF
JEITA Profile
“A Guide to the Safe Use of Secondary Lithium Ion Batteries in
Notebook-type Personal Computers”
Apr. 10, 2007
JEITA
USB BC
“Battery Charging Specification Revision 1.2”
Dec. 7, 2010
USB.org
Smart Battery
Charger
Smart Battery Charger Specification Revision 1.1
Dec. 11, 1998
SBS-IF
USB 2.0
Universal Serial Bus Specification Revision 2.0
Jul. 26, 2013
USB.org
USB 3.1
Universal Serial Bus Revision 3.1 Specification Rev. 1.0
Aug. 11, 2014
USB.org
USB PD
USB Power Delivery Specification Rev. 2.0 V1.0
Apr. 27, 2000
USB.org
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
4/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
1. Introduction
BD99954 is a Battery Manager IC for 1-4Cell Lithium-Ion / Lithium-Ion polymer secondary battery pack used in portable
equipment such as Tablets, Ultra books or others.
BD99954 includes a Battery Charger, two port BC1.2 detection, a Battery Monitor for voltage, current, temperature and
alarm(INT#, PROCHOT#) Controller. Figure 1-1 shows the Typical Application Circuit.
BD99954
ACP ACN
HG1
LG1
LX1
SRP
SRN
BGATE
BATT
ACGATE1
SDA
SCL
GND
ACOK
VCC
IOUT
VBUS
PMON
BOOT1
BOOT2
HG2
LG2
LX2
ACGATE2
REGN
PROCHOT#
VBUS_DMI
VBUS_DPI
VCC_DMO
VCC_DPO
IADP/RESET
USB
USB
D-
D+
VBUS
Battery
System
TSENSE
Θ
VREF
VBUS_IDID
INT#
Q2
Q1 C1 C2
R1
Q6
C3
C4
C5
L1
R2
Q7
C6
C7
C8
C9
R3
R4
Q5
D-
D+
ID
VBUS_DMO
VBUS_DPO
VCC_DMI
VCC_DPI
VCC_ID
VREF
R5
R6
C10
C11 C12
C13
C14
C15
C17
V3P3V
R10
Q4
Q3
R11
R9
R12R13R14
EC
IMVP
PHY
C18
R15
R16
R7
R17
R18
Figure 1-1 Block Diagram
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
5/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
2. Signal Description
Table 2-1 Signal Description
Pin
No.
Ball
No.
[CSP]
Pin Name
Function
1
B2
VBUS
USB Power Supply
2
A2
VCC
DC Power Supply
3
D3
ACOK
AC adapter voltage detection open drain output.
4
A3
INT#
Interrupt for I2C
5
B3
PROCHOT#
Active low open drain output of “processor hot” indicator. The charger
IC monitors events like adapter current, battery discharge current. Once any
event in PROCHOT# profile is triggered, a minimum 10ms pulse is asserted.
6
A4
ACN
Input current sense resistor negative input.
7
A5
ACP
Input current sense resistor positive input.
8
B4
ACGATE1
Charge pump output to drive adapter input n-channel MOSFET s.
The ACGATE1 voltage is 5V above VBUS during AC adapter insertion.
9
B5
ACGATE2
Charge pump output to drive adapter input n-channel MOSFET s.
The ACGATE2 voltage is 5V above VCC during AC adapter insertion.
10
A6
IADP/RESET
Default Input Current Limit Setting pin and System resistor reset pin.
11
B6
VBUS_DMI
VBUS side USB D- Input / Output
12
C4
VBUS_DPI
VBUS side USB D+ Input / Output
13
C5
VBUS_DMO VBUS side USB D- Output / Input
14
C6
VBUS_DPO VBUS side USB D+ Output / Input
15
D5
VBUS_ID
VBUS side USB ID pin input
16
D6
VCC_DMI
VCC side USB D- Input / Output
17
D4
VCC_DPI
VCC side USB D+ Input / Output
18
E6
VCC_DMO VCC side USB D- Output / Input
19
F6
VCC_DPO VCC side USB D+ Output / Input
20
G6
VCC_ID
VCC side USB ID pin input
21
E5
SCL
SMBus Clock Input
22
F5
SDA
SMBus Data Input / Output
23
G5
PMON
Buffered total system power current output. Place a resistor between
PMON pin and GND.
24
F4
IOUT
Buffered adapter or charge current output selectable with SMBus command.
25
G4
VREF
1.5V LDO Output
26
E3
TSENSE
Battery temperature monitor pin.
Active low battery present input signal. LOW indicates battery is present,
and HIGH indicates the battery is absent and the charging stop.
27
G3
BATT
Battery Voltage Input
28
F3
BGATE
Gate Control Output
29
G2
SRN
Charge current sense resistor negative input.
30
G1
SRP
Charge current sense resistor positive input.
31
F2
GND
Ground
32
F1
HG2
DC/DC Boost side High Side Gate Driver
33
E2
LX2
DC/DC Boost side Inductor Connection
34
E1
BOOT2
DC/DC Boost side Driver Voltage Output
35
D2
LG2
DC/DC Boost side Low Side Gate Driver
36
D1
LG1
DC/DC Buck side Low Side Gate Driver
37
C1
BOOT1
DC/DC Buck side Driver Voltage Output
38
C2
LX1
DC/DC Buck side Inductor Connection
39
B1
HG1
DC/DC Buck side High Side Gate Driver
40
A1
REGN
LDO Output
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
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6/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
3. Pin Configuration
110
11
20
21
30
31
40
VCC_ID
VCC_DPO
VCC_DMO
VCC_DPI
VCC_DMI
VBUS_ID
VBUS_DPO
VBUS_DMO
VBUS_DPI
VBUS_DMI
GND
HG2
LX 2
BO OT2
LG 2
LG 1
BO OT1
LX 1
HG1
REGN
Figure 3-1 Pin Configuration in BD99954MWV (Top View)
Figure 3-2 Pin Configuration in BD99954GW (Bottom View)
G SRP SRN BATT VREF PMON VCC_ID
F HG2 GND BGATE IOUT SDA VCC_DPO
E BOOT2 LX2 TSENSE N/C SCL VCC_DMO
D LG1 LG2 ACOK VCC_DPI VBUS_ID VCC_DMI
C BOOT1 LX1 VBUS_DPI VBUS_DMO VBUS_DPO
B HG1 VBUS PROCHOT# ACGATE1 ACGATE2 VBUS_DMI
A REGN VCC INT# ACN ACP IADP/RESET
1 2 3 4 5 6
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
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BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
4. Absolute Maximum Rating
Value
Voltage range
(with respect to GND)
VBUS, VCC, SRN, SRP, ACN, ACP, BATT
-0.3 to 28V
LX1, LX2
-2 to 28V
ACGATE1, ACGATE2, BGATE, BOOT1, BOOT2,
HG1, HG2
-0.3 to 32V
LX1-BOOT1,LX2-BOOT2
-0.3 to 6V
ACP-ACN, SRP-SRN
-0.3 to 0.3 V
VBUS_DPI, VBUS_DMI, VBUS_ID, VBUS_DPO,
VBUS_DMO, VCC_DPI, VCC_DMI, VCC_ID,
VCC_DPO, VCC_DMO, ACOK, REGN, INT#,
PROCHOT#, IOUT, PMON, SCL, SDA, LG1, LG2
-0.3 to 7.0 V
TSENSE, IADP/RESET, VREF
-0.3 to 2.1 V
Junction temperature
150℃
Storage temperature
-50 to 150℃
5. Thermal Resistance (Note 1)
Parameter
Symbol
Thermal Resistance (Typ)
Unit
1s(Note 4)
2s2p(Note5)
4s5p(Note7)
UQFN040V5050
Junction to Ambient
θJA
113.6
24.5
-
°C/W
Junction to Top Characterization Parameter(Note 2)
ΨJT
8
3
-
°C/W
UCSP55M3C
Power Dissipation(Note3)
θJA
-
-
0.97
W
(Note 1)Based on JESD51-2A(Still-Air) only BD99954MWV
(Note 2)The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface
of the component package.
(Note 3) Derate by 78.1mW/°C when operating above Ta=25°C (when mounted in ROHM’s standard board)
(Note 4)Using a PCB board based on JESD51-3.
Layer Number of
Measurement Board
Material
Board Size
Single
FR-4
114.3mm x 76.2mm x 1.57mmt
Top
Copper Pattern
Thickness
Footprints and Traces
70μm
(Note 5)Using a PCB board based on JESD51-5, 7.
Layer Number of
Measurement Board
Material
Board Size
Thermal Via(Note6)
Pitch
Diameter
4 Layers
FR-4
114.3mm x 76.2mm x 1.6mmt
1.20mm
Φ0.30mm
Top
2 Internal Layers
Bottom
Copper Pattern
Thickness
Copper Pattern
Thickness
Copper Pattern
Thickness
Footprints and Traces
70μm
74.2mm x 74.2mm
35μm
74.2mm x 74.2mm
70μm
(Note 6) This thermal via connects with the copper pattern of all layers..
(Note 7)Using a PCB board
Layer Number of
Measurement Board
Material
Board Size
9 Layers
FR-4
63mm x 55mm x 1.6mmt
6. Recommended Operating Condition
MIN
MAX
Unit
VBUS
3.8
25
V
VCC
3.8
25
V
BATT
0
19.2
V
IIN
-
16
A
ISYS
-
16
A
ICHARGE
-
16
A
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
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8/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
Operating Temperature range
-30
85
℃
7. Function Descriptions
7.1. Block Diagram
VCC
VBUS
Power
Path
Control
Logic
VBUS
Gate
Charge Pump
VCC
Gate
Charge Pump
ACP
ACN
SRP
SRN
BATT
HG1
LG1
LX1
BOOT1
Buck
DRIVE
R
HG2
LG2
LX2
BOOT2
Boost
DRIVE
R
REGN
5V
LDO
1.5V
LDO
VREF
TSENSE
MUX
DAC
BGATE
Charge Pump
BGATE
INT#
PMON
IOUT
ACOK
SCL
SDA
GND
VCC_
DPO
VCC_
DMO
SMBUS
I/F
BC1.2 Detector
VBUS
_DPO
VBUS
_DMO
VCC_
DMI
VCC_
DPI
VBUS
_DMI
VBUS
_DPI
PWM
Control
Logic
Control
Logic
DAC
ADC
VREF
BATT
SRN
VBUS
VCC
VFB_CHG
VFB_ADP
VFB_CHG
VFB_ADP
IADP/RESET
VBU
S_ID
VCC_
ID
PROCHOT#
ACGATE2
ACGATE1 REGN
BoS
VCC VBUS
REGN
BATT VOR
VOR
PWM Control Logic
Power Path Control Logic
Control Logic
Control Logic
VREF_CHG
VREF_SYS
VREF_ADP
VREF_BAT VREF_TRC
VUVLO_BUS
VOVP_BUS
VOVP_VCC
VUVLO_VCC
REGN
VREF
Slope
REGN
xA
xA
ACN
Figure 7-1 Block diagram
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
9/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
7.2. External Characteristics for Battery Charger
Adapter=18.0V, Battery=7.4V, LX1=LX2=0.0V, GND=0V, Ta=25℃ (unless otherwise noted.)
Item
Symbol
Value
Unit
Condition
Min.
Typ.
Max.
Adapter Standby Current 1
IADP1
-
1.0
1.5
mA
Charge Pump ON
Adapter Operating Current 2
IADP2
-
4.0
8.0
mA
Charge Pump ON
Not Switching
Battery Standby Current
(VBUS=VCC=0.0V)
IBATT1
-
50.0
100.0
μA
BGATE Charge Pump ON
REG0x7Ch[2:0]=5h
Battery Standby Current
(VBUS=VCC=0.0V)
IBATT2
-
25.0
50.0
μA
BGATE Charge Pump OFF
Deep Sleep mode
REG0x7Ch[2:0]=6h
SDA=SCL=0V
Battery Standby Current
(VBUS=VCC=0.0V)
IBATT3
-
125
200
μA
BGATE Charge Pump ON
PROCHOT only VSYS [1msec/S]
REG0x7Ch[2:0]=2h
Battery Standby Current
(VBUS=VCC=0.0V)
IBATT4
-
150
290
μA
BGATE Charge Pump ON
PROCHOT only VSYS [250μsec/S]
REG0x7Ch[2:0]=1h
Battery Current
(VBUS=VCC=0.0V)
IBATT5
-
700
900
μA
BGATE Charge Pump ON
with PROCHOT Monitored System
voltage and Battery current
REG0x7Ch[2:0]=0h
SMBus Operation Frequency
FSMB
10
-
400
kHz
REGN Output Voltage
VREGN
5.0
5.2
5.4
V
REGN External output current
VREGN_LD
10
-
-
mA
REGN UVLO Voltage
VREGN_UVL
O
2.375
2.5
2.625
V
Detecting REGN falling edge
REGN UVLO Hysteresis Range
VREGN_UVL
O
50
100
200
mV
Detecting REGN rising edge
LDO Output Voltage
VREF
1.455
1.5
1.55
V
IVREF=1mA
VREF UVLO release Voltage
VREF_UVLO
1.35
1.40
1.45
V
Detecting VREF rising edge
VREF UVLO Hysteresis Range
VREF_UVLO_
hys
25
50
100
mV
Detecting VREF falling edge
<PMON>
Power Monitor Amplifier Gain
(IPMON)/(VACP×IACP +
VBAT×IBAT )
GPMON
-
16
-
μA/W
REG0x25h[2:0]=6h 6.25W Setting
-
8
-
μA/W
REG0x25h[2:0]=5h 12.5W Setting
-
4
-
μA/W
REG0x25h[2:0]=4h 25W Setting
-
2
-
μA/W
REG0x25h[2:0]=3h 50W Setting
-
1
-
μA/W
REG0x25h[2:0]=2h 100W Setting
-
0.5
-
μA/W
REG0x25h[2:0]=1h 200W Setting
-
0.25
-
μA/W
REG0x25h[2:0]=0h 400W Setting
IPMON
-5
-
+5
%
IPMON=50uA
PMON Maximum Current
IPMONMAX
-
-
200
μA
<IOUT>
IADP Voltage Accuracy
GIADP
-
20
-
V/V
(VIADP)/(VACP- VACN)
VIOUT1
802.8
819.2
835.6
mV
(VACP- VACN)=40.96mV
VIOUT2
393.2
409.6
426
mV
(VACP- VACN)=20.48mV
VIOUT3
174.1
204.8
235.5
mV
(VACP- VACN)=10.24mV
VIOUT4
81.92
102.4
122.9
mV
(VACP- VACN)=5.12mV
VIOUT5
-
51.2
-
mV
(VACP- VACN)=2.56mV
VIOUT6
-
25.6
-
mV
(VACP- VACN)=1.28mV
IDCHG Voltage Accuracy
GIDCHG
-
16
-
V/V
(VIDCHG)/(VSRN- VSRP)
VIDCHG1
622.6
655.4
688.2
mV
(VSRN- VSRP)=40.96mV
VIDCHG2
298.2
327.7
357.2
mV
(VSRN- VSRP)=20.48mV
VIDCHG3
122.9
163.8
204.8
mV
(VSRN- VSRP)=10.24mV
VIDCHG4
41
81.9
122.9
mV
(VSRN- VSRP)=5.12mV
Note: Resister address refer to extended commands
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
7.3. DC Input & Over Voltage Protection (OVP)
7.3.1. Outline
Dual-input for the battery charger source: USB VBUS and VCC
25V over voltage protection.
One of two DC input selection (exclusive)
Effective input is selected by the control registers, VCC as default.
7.3.2. Electrical Characteristics
Adapter=18.0V, Battery=7.4V, LX1=LX2=0.0V, GND=0V, Ta=25℃ (unless otherwise noted.)
Item
Symbol
Value
Unit
Condition
Min.
Typ.
Max.
VCC Input Operating Range
VCCRNG
3.8
-
25
V
VCC UVLO Release Voltage
VCC_UVLO
3.7
3.8
3.9
V
VCC rising
VCC UVLO Hysteresis Range
VCC_UVLO_hy
s
80
130
180
mV
VCC falling
VCC OVP Detection Voltage
VCC_OVP
25.0
25.5
26.0
V
VCC rising
VCC OVP Hysteresis Range
VCC_OVP_hys
100
150
200
mV
VCC falling
USB Input Operating Range
VUSBRNG
3.8
-
25
V
VBUS_UVLO Release Voltage
VBUS_UVLO
3.7
3.8
3.9
V
VBUS rising
VBUS UVLO Hysteresis Range
VBUS_UVLO_h
ys
80
130
180
mV
VBUS falling
VBUS OVP Detection Voltage
VBUS_OVP
25.0
25.5
26
V
VBUS rising
VBUS OVP Hysteresis Range
VBUS_OVP_hy
s
100
150
200
mV
VBUS falling
VACOK Output “L” Voltage
VOK_ON
-
-
1.0
V
I(VACOK) =1mA
VACOK Leakage Current
IOKL
-
-
1
µA
VACOK = 5V
VBUS Reverse Output turn-on Time
TVBUS_ON
-
5
10
msec
Voltage Output down-off Time
TVBUS_OFF
-
1
5
μsec
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
11/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
7.4. USB Detection
7.4.1. Outline
USB Charger port detection and USB ID
Supports USB BC 1.2, USB ACA, USB ID pin, USB OTG, and PD plug detection.
Integrated analog switch supports USB HS (480Mbps).
7.4.2. Electrical Characteristics
Table 7-1 Electrical Characteristics for USB Detection
(Ta=25C, BATT=3.6V, VBUS=5.0V)
Item
Symbol
Specification
Unit
Condition
Min.
Typ.
Max.
<USB Charger Detection>
VDP_SRC voltage
(output voltage for D+)
VDP_SRC
0.5
0.6
0.7
V
Io=0 to 200uA
VDM_SRC voltage
(output voltage for D-)
VDM_SRC
0.5
0.6
0.7
V
Io=0 to 200uA
RCD resistance
(D+ pull up resistance)
RCD
75
100
125
kΩ
USB port un-detection resistance
(Host D+ pull down resistance)
RHDP
100
-
-
kΩ
VDAT_REF voltage
(D+/D- detection voltage)
VDAT_RE
F
0.3
0.35
0.4
V
HDPR/HDML voltage rising
VLGC voltage
(D+/D- detection voltage)
VLGC
1.2
1.4
1.6
V
HDPR/HDML voltage rising
D+ sink current
IDP_SINK
50
85
150
A
V(HDPR) = 0.6V
D- sink current
IDM_SINK
50
85
150
A
V(HDML) = 0.6V
<USB Switch (DP, DM)>
Switch on-state resistance
RON_US
BSW
-
5
10
Ω
VIN=3.3V or 0V
Switch off-state leakage current
IIOFF_U
SB
-3
-
3
μA
VIN=3.3V or 0V VBUS=OPEN
Switch capacitance
CSW
-
6
-
pF
USBSW ON
USB Switch start-up time
TUPUSB
-
-
1
ms
USBSW OFF→ON
(Ta=25C, VBAT=3.6V, VBUS=5.0V)
Item
Symbol
Specification
Unit
Condition
Min.
Typ.
Max.
<USB ID>
Pull-down detection resistance
RIDopen
1000
-
-
kΩ
USB ID removal detection
RID1
-
797
-
kΩ
RID2
-
557
-
kΩ
RID3
-
440
-
kΩ
RID4
-
390
-
kΩ
RID5
-
287
-
kΩ
RID6
-
200
-
kΩ
RID7
-
180
-
kΩ
RID8
-
124
-
kΩ
RID9
-
102
-
kΩ
RID10
-
68
-
kΩ
RID11
-
47
-
kΩ
RID12
-
36.5
-
kΩ
RID13
-
1
-
kΩ
RID14
-
0
50
Ω
GND level detection
COMPH detection voltage ratio
RatioH
85
90
95
%
Ratio = 100xV(ID)/VCCIN [%]
ID port voltage rising
Note: The pull-down resistance is designed in 5 % accuracy to comply with the standard of MCPC (Mobile Computing Promotion Consortium), except
the 1kΩ resistor for RID_GND. The RID_GND resistance complies with the MHL (Mobile High-definition Link) standard in 20 % accuracy.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
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BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
7.5. DC/DC Converter
7.5.1. - Outline
Input Current Limit value setting: 96 mA to 16352 mA for VBUS and VCC
Charger supply voltage anti-collapse control.
Low power mode support
Include thermal protection and shutdown
7.5.2. Electrical Characteristics
Table 7-2 Electrical Characteristics for DC/DC Converter
Adapter=18.0V, Battery=7.4V, LX1=LX2=0.0V, GND=0V, Ta=25℃ (unless otherwise noted.)
Item
Symbol
Value
Unit
Condition
Min.
Typ.
Max.
<INPUT CURRENT>
USB 500mA Current Accuracy
IUSB500
398
448
500
mA
REG0x07h/08h=01C0h
USB 900mA Current Accuracy
IUSB900
764
832
900
mA
REG0x07h/08h=0340h
BC1.2 1500mA Current Accuracy
IUSB1500
1380
1440
1500
mA
REG0x07h/08h=05A0h
USB-PD 3A Current Accuracy
IUSB3000
2824
2912
3000
mA
REG0x07h/08h=0B60h
USB-PD 5A Current Accuracy
IUSB5000
4792
4896
5000
mA
REG0x07h/08h=1320h
Input Current Setting Range
IADPRNG
96
-
16352
mA
REG0x07h or REG0x08h
Charge Current Setting LSB
IADPLSB
-
32
-
mA
Input Current Accuracy
(10mΩ current sense resistor)
IADP1
-2%
4096
+2%
mA
IADP2
-3%
2048
+3%
mA
IADP3
-5%
1024
+5%
mA
IADP4
-10%
512
+10%
mA
IADP/RESET pin input Voltage range
VADPTRNG
0.1
-
1.4
V
IADP/RESET pin Current setting
Range
IADPTRNG
128
-
5120
mA
IADP/RESET pin Current setting step
IADPSTEP
-
512
-
mA
RESET Detection Voltage
Vreset_d
et
-
-
0.22
V
IADP/RESET voltage falling
RESET release Voltage
Vreset_re
l
0.44
-
-
V
IADP/RESET voltage rising
RESET Detection duration time
TRESET
100
-
-
μsec
<MINIMUM SYSTEM VOLTAGE>
Minimum System Voltage Setting
Range
VMSVRNG
2.560
-
19.2
V
VSYSREG_SET=2,560 ~ 19,200mV,
64mV steps.
Minimum System Voltage Setting LSB
VMSVLSB
-
64
-
mV
Minimum System
Voltage accuracy
VMSV1
-2.0%
3.072
+2.0%
V
REG0x11h=0C00h
VMSV2
-1.0%
6.144
+1.0%
V
REG0x11h=1800h
VMSV3
-2.0%
9.216
+2.0%
V
REG0x11h=2400h
VMSV4
-2.0%
12.288
+2.0%
V
REG0x11h=3000h
<Anti-Collapse Voltage>
VBUS Anti-Collapse Threshold
Voltage Range
Vanti_VBUS
3.84
-
25.0
V
REG0x0Dh
Anti-Collapse Threshold Voltage
Accuracy
Vanti_VBUS_a
cc
-100
-
+100
mV
VCC Anti-Collapse Threshold Voltage
Range
Vanti_VCC
3.84
-
25.0
V
REG0x0Eh
Anti-Collapse Threshold Voltage
Accuracy
Vanti_VCC_ac
c
-100
-
+100
mV
<Switching Frequency>
Switching Frequency 1
FOSC1
510
600
690
kHz
REG0x0Ch[3:2]=00b
Switching Frequency 2
FOSC2
770
860
950
kHz
REG0x0Ch[3:2]=01b
Switching Frequency 3
FOSC3
850
1000
1150
kHz
REG0x0Ch[3:2]=10b
Switching Frequency 4
FOSC4
1020
1200
1380
kHz
REG0x0Ch[3:2]=11b
<DRIVER>
HRDV1 PMOS RON
RHDRV1P
-
6.0
10.0
Ω
HRDV1 NMOS RON
RHDRV1N
-
0.7
1.3
Ω
LRDV1 PMOS RON
RLDRV1P
-
7.5
12.0
Ω
LRDV1 NMOS RON
RLDRV1N
-
0.9
1.4
Ω
HRDV2 PMOS RON
RHDRV2P
-
6.0
10.0
Ω
HRDV2 NMOS RON
RHDRV2N
-
0.7
1.3
Ω
LRDV2 PMOS RON
RLDRV2P
-
7.5
12.0
Ω
LRDV2 NMOS RON
RLDRV2N
-
0.9
1.4
Ω
Note: Resister address refer to extended commands
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
13/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
7.5.3. Detailed IADP input current limit settings
Input Current limit is set by external IADP/RESET pin.
This function is enabled by VM_CTRL_SET.EXTIADPEN bit =1.
Once the charger reset is released when this function is enabled, the corresponding input current value which
depends on the IADP/RESET voltage will be stored to the SEL_ILIM_VAL register. And this is used as the input
current limit. It can be overwritten through SMBus.
Table 7-3 IADP pin Input Current Limit settings
0
512
1024
1536
2048
2560
3072
3584
4096
4608
5120
5632
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Input Current Limit Value (mA)
VIADP/RESET (V)
512mA/90mV
0.56V
1.37V
0.44V
RESET
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
14/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
7.6. Charger
7.6.1. - Outline
Supports battery insertion and removal detection.
Controls the VSYS output voltage with a deeply discharged battery.
JEITA compliant Battery Charging Profile with thermal control of the charging current and voltage
settings by measuring the temperature from the external thermistor
Supports battery supplement mode
Automatic or manual control of the Watch Dog Timer (via software) while Pre–charging and Fast-charging
7.6.2. Electrical Characteristics
Table 7-4 Electrical Characteristics for Charger
Adapter=18.0V, Battery=7.4V, LX1=LX2=0.0V, GND=0V, Ta=25℃ (unless otherwise noted.)
Item
Symbol
Value
Unit
Condition
Min.
Typ.
Max.
Battery Input Operating Range1
VBATRNG
0.0
-
19.2
V
With Adapter Input
Battery Input Operating Range1
VBATRNG
2.5
-
19.2
V
Without Adapter Input
<CHARGE VOLTAGE>
Charge Voltage Setting Range
VCVRNG
2.560
-
19.200
V
REG0x1A, REG0x1Bh or REG0x1Ch
Charge Voltage Setting LSB
VCVLSB
-
16
-
mV
Charge Voltage accuracy
VCV1S
-0.5%
4.192
+0.5%
V
REG0x1Ah/0x1Bh/0x1Ch=1060h
VCV2S
-0.5%
8.400
+0.5%
V
REG0x1Ah/0x1Bh/0x1Ch=20D0h
VCV3S
-0.5%
12.592
+0.5%
V
REG0x1Ah/0x1Bh/0x1Ch=3130h
VCV4S
-0.5%
16.800
+0.5%
V
REG0x1Ah/0x1Bh/0x1Ch=41A0h
VBAT OVP Detection range
VOVPRNG
2.56
-
19.2
V
REG0x1Dh
<CHARGE CURRENT>
Charge Current Setting Range
ICHGRNG
0
-
16384
mA
REG0x16h
Charge Current Setting LSB
ICHGLSB
-
64
-
mA
Charge Current accuracy
(10mΩ current sense resistor, BATT >
Minimum System Voltage)
ICHG1
-2%
4096
+2%
mA
REG0x16h=1000h
ICHG2
-3%
2048
+3%
mA
REG0x16h=0800h
ICHG3
-5%
1024
+5%
mA
REG0x16h=0400h
ICHG4
-20%
256
+20%
mA
REG0x16h=0100h
ICHG5
-40%
128
+40%
mA
REG0x16h=0080h
Trickle Charge Current Setting Range
ITRCCHGRNG
0
256
1024
mA
REG0x14h or REG0x15h
Trickle Charge Current Setting LSB
ITRCCHGLSB
-
64
-
mA
Maximum Trickle Charge Current
(10mΩ current sense resistor, BATT
< Minimum System Voltage)
ICHG6
-
1024
-
mA
REG0x14h or REG0x15h
<Thermal Control>
Battery Temperature Threshold HOT1
VTH_HOT1
-
45
-
°C
OTP Programmable REG0x45h
Battery Temperature Threshold HOT2
VTH_HOT2
-
50
-
°C
OTP Programmable REG0x44h
Battery Temperature Threshold HOT3
VTH_HOT3
-
58
-
°C
OTP Programmable REG0x43h
Battery Temperature Threshold
COLD1
VTH_COLD1
-
10
-
°C
OTP Programmable REG0x42h
Battery Temperature Threshold
COLD2
VTH_COLD2
-
2
-
°C
OTP Programmable REG0x41h
Battery Temperature Measurement
Acc
Tbat
-2
-
+2
°C
Battery Open Detection Voltage
VTH_OPN
-
VREF*0.9
5
-
V
<Battery Short Current Detection>
Battery Short Current Detection
IBATSHORT
0
-
25,000
mA
REG0x1Fh
Battery Short Current Duration time
TBATSHORT
4
-
1020
msec
REG0x10h[15:8]
<Watchdog Timer>
Pre Charging Time
TPRE
13.0
14.5
16
min
Fast Charging Time
TFAST
196
218
240
min
High Temperature Protection Time
THTPRO
108
120
132
min
Over 58°C
Charging Termination Delay Time
TTOPOFF
13
15
17
sec
Note: Resister address refer to extended commands
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
15/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
7.6.3. Battery Charging Profile
Figure 7-5 Battery Charging Profile
TRICKLE
CHARGE
FAST CHARGE
(BGATE ON)
Charge Current
Battery
Voltage
Time
VBAT
VSYS IBAT
VSYSREG_SET
System Voltage
Ichg x Rds
ITRICH_SET
IPRECH_SET
VPRECHG_TH
_SET
PRE
CHARGE
Done
ITERM_SET
(CC) (CV)
VFASTCHG_R
EG_SET1,2,3
ICHG_SET
(BGATE OFF)
VBAT x 1.15
The charging current is controlled by the battery temperature measured from the external thermistor.
In the low-temperature condition, the charging current is reduced to a half of the setting value (ICHG_SET).
ICHG_SET
T1 T2 T4
ICHG_SET/2
0
Temperature of Battery Pack
Charging
Current
The charging voltage is also reduced by the temperature as set by the control registers, VFASTCHG_REG_SET1/2/3.
VFASTCHG
_REG_SET1
T1 T2 T3 T5T4
VFASTCHG
_REG_SET2
VFASTCHG
_REG_SET3
0
Temperature of Battery Pack
Charging
Voltage
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
16/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
7.7. Reverse DC/DC Converter
7.7.1. Outline
Charger provides a voltage output (Reverse Buck/Boost) via VBUS or/and VCC when an USB OTG device is connected.
7.7.2. Electrical Characteristics
Table 7-6 Electrical Characteristics for Reverse Buck/Boost
Adapter=18.0V, Battery=7.4V, LX1=LX2=0.0V, GND=0V, Ta=25℃ (unless otherwise noted.)
Item
Symbol
Value
Unit
Condition
Min.
Typ.
Max.
<OUTPUT CURRENT Limit>
Output Current Limit Setting Range
IRADPRNG
0
4096
8128
mA
REG0x09h
Output Current Limit Setting LSB
IRADPLSB
-
32
-
mA
Output Current Limit Accuracy
(10mΩ current sense resistor)
IRADP1
-2%
4096
+2%
mA
REG0x09h=1000h
IRADP2
-3%
2048
+3%
mA
REG0x09h=0800h
IRADP3
-5%
1024
+5%
mA
REG0x09h=0400h
IRADP4
-10%
512
+10%
mA
REG0x09h=0200h
<Output VOLTAGE>
Output Voltage Setting 1
VROUT1
4.95
5.0
5.05
V
REG0x19h=1380h
Output Voltage Setting 2
VROUT2
5.15
5.2
5.25
V
REG0x19h=1440h
Output Voltage Setting 3
VROUT3
8.91
9.0
9.09
V
REG0x19h=2340h
Output Voltage Setting 4
VROUT4
11.88
12.0
12.12
V
REG0x19h=2F00h
Output Voltage Setting 5
VROUT5
19.8
20.0
20.2
V
REG0x19h=4E40h
Output Voltage Setting Range
VROUTRNG
4.032
-
22.016
V
REG0x19h
Output Voltage Setting LSB
VROUTLSB
-
64
-
mV
VBUS Buck/Boost Output Short
Circuit Protection.
VRscp
-
VBUS_
UVLO
VCC_U
VLO
-
V
VBUS Buck/Boost OVP Voltage
VRovp
-
VROUT x
1.1
-
V
VBUS Buck/Boost OVP Detection
Hysteresis Range
VRovp_hy
s
-
VROUT x
1.05
-
mV
Note: Resister address refer to extended commands
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
17/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
7.8. 12-bit ADC
7.8.1. Outline
12-bit Successive Approximation Register A/D Converter
Input Voltage range: 2.0 to 19.2V (BATT)
Input Voltage range: 2.0 to 25V (VBUS, VCC, ACP, SRP)
Input Voltage range: 0.1 to 1.4V (TSENSE)
Input Voltage range: 0.1 to 1.4V (IADP/RESET)
Current monitor range: 0.3 to 16.384A (IACP)
Current monitor range: 0.3 to 25A (IBAT)
7.8.2. Electrical Characteristics
Table 7-7 Electrical Characteristics for 12-bit SAR-ADC
(Unless otherwise specified, Ta=25C, VREF=1.5V)
Parameter
Symbol
Specification
Unit
Condition
Min
Typ
Max
<12-bit SAR ADC>
Resolution
RES
-
-
12
bit
Conversion Period
TCONV
-
20
-
µs
Gain Error 1
Gerr1
−1.1
-
+1.1
%
BATT,VBUS,VCC,ACP,
SRP=5V and 15V
Gain Error 2
Gerr2
−1.1
-
+1.1
%
TSENSE,IADP/RESET
=0.5V and 1.0V
Gain Error 3
Gerr3
−1.1
-
+1.1
%
IACP,IBAT=1.5A and 8A
VOffset error
Voffset
-110
110
mV
IOffset error
Ioffset
-110
-
110
mA
7.8.3. Functions
SAR-ADC measures the 10 following factors by time sharing. These factors can be disabled by SMBus command.
The actual value and the 2-sample moving average value are read by SMBus command.
#
Factor
Conversion Period
Conversion Interval
1
VBUS or VCC
20us
VBUS 400us
VCC 400us
2
IACP
20us
200us
3
VACP
20us
200us
4
IBAT(+)
20us
200us
5
IBAT(-)
20us
200us
6
VBATT
20us
200us
7
IACP
20us
200us
8
VSRP
20us
200us
9
IADP/RESET or TSENSE
20us
IADP/RESET 200us
TSENSE 1s
10
IBAT(-)
20us
200us
VBUS or VCC
IACP
VACP
IBAT(+)
IBAT(-)
VBATT
IACP
VSRP
IADP/RESET or TSENSE
IBAT(-)
20us
20us
20us
20us
20us
20us
20us
20us
20us
20us
The power calculation of PMON is carried out from IACP, VACP, IBAT, VBATT.
PACP = IACP * VACP
PBAT = IBAT * VBATT
PMON = PACP + PBATT
PMON power change can be observed when the value is stable longer than the “Conversion Interval”, 200us.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
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BD99954MWV, BD99954GW
Datasheet
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
7.9. Power On
Whenever BD99954 receives power from the adapter or battery, BD99954 wakes up and starts loading data from the OTP. After
OTP loading is completed, BD99954 is in standby position.
7.9.1. VBAT power on and VBUS/VCC plugged-in
At the first VBAT power on, BD99954 starts OTP loading. And when VBUS or VCC is eventually plugged in, BD99954sserts ACOK
and starts the BC1.2 Detection sequence. After the BC1.2 Detection is completed, BD99954 limits the input current, reflects the
BC1.2 setting and starts charging.
7.9.2. VBUS/VCC plugged-off
When VBUS plugged off, BD99954 deasserts AC_OK and limits input current as IADP external pin or minimum setting (it is
programmable). And then VBUS or VCC plugged in again, BD99954sserts AC_OK and starts BC1.2 detection.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
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BD99954MWV, BD99954GW
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
7.9.3. VBUS and VCC plugged in
When VBUS plugged in and then VCC plugged in, BD99954 selects VBUS or VCC with priority setting. If VCC is 1st priority
(programmable), BD99954 changes power source from VBUS to VCC. If VBUS is 1st priority BD99954 keeps power source VBUS.
Each case AC_OK keeps “H”.
VBAT
VBUS
VCC
VBUS_UVLO
VCC_UVLO
VREF
VREF_UVLO
AC_OK Keep "H" when VCC pluged in because already VBUS pluged in.
OSC Stable
OTP Load
Loaded.
Charger Reset
DCDC Control DCDC start up
VBUS BC1.2 Detection
Detected
VCC BC1.2 Detection Initial Detecting or Waiting Detected or Waited
Input Current Limit VBUS Input Current Limit Resistor or Minimum BC1.2 Setting Register Setting
Change to VCC Input Current Limit ▲EC Write by SMBus.
Input Current Limit with Peak Control with Peak Control with Peak Control with Peak Control
Deadbattery Comparator
Deasserted ( VBAT is OK )
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
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BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8. Control Specification
BD99954 has several control registers to set configurations or to sense the hardware status for the internal function
operations. Host is able to write to or read from the control registers via SMBus (friendly I2C).
8.1. SMBus Communication
BD99954 operates in slave mode on the SMBus and supports Layer 2 communication protocol.
8.1.1. SMBus Slave Address
Slave Address for the BD99954 is 0001_001.
The register address is set by “Slave Address”. The “Slave Address” is also used as the start address of contiguous
addressing for multiple write or read access.
8.2. SMBus Protocols
The following is a description of the various SMBus protocols. BD99954 supports the protocols defined in this section.
BD99954 does not support all the protocols defined in the SMBus Specification. The results returned by such a device to a
protocol it does not support is undefined.
Below is a key to the protocol diagrams in this section. Not all protocol elements will be presented in every command. For
instance, not all packets are required to include the packet error code.
S Start Condition
Sr Repeated Start Condition
Rd Read (bit value of 1)
Wr Write (bit value of 0)
xShown under a field indicates that that field is required to have the value of ‘x’
AAcknowledge (this bit position may be‘0’ for an ACK)
NAcknowledge (this bit position may be‘1’ for a NACK)
P Stop Condition
PEC Packet Error Code
Master (SMBus Host) to Slave
Slave (SMBus Device) to Master
BD99954 supports following protocols.
Write Word
Read Word
8.2.1. Write Word
The first byte of a Write Word access is the command code. The next are the high data byte and low data byte to be written.
In this example the master asserts the slave device address followed by the write bit. The device acknowledges and the
master delivers the command code. The slave again acknowledges before the master sends the data bytes. The slave
acknowledges each byte, and the entire transaction is finished with a STOP condition.
BD99954 does not support PEC.
SMBus Write Word
S
1
Slave Address
7
W
r
1
A
1
Command Code
8
A
1
Data Low Byte
8
A
1
P
1
Data High Byte
8
A
1
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
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BD99954MWV, BD99954GW
Datasheet
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.2.2. Read Word
Reading data is slightly more complicated than writing data. First the host must write a command to the slave device. Then it
must follow that command with a repeated START condition to denote a read from that device’s address. The slave then
returns one high and low byte of data.
Note that there is no STOP condition before the repeated START condition, and that a NACK signifies the end of the read
transfer. BD99954 does not support PEC.
SMBus Read Word
8.2.3. SMBus Communication Timing Waveforms and Timing Specification
Table 8-1 Electrical Characteristics for SMBus Timing Specification
(Unless otherwise specified, Ta=25C, VREF=1.5V)
Parameter
Symbol
Specification
Unit
Condition
Min
Typ
Max
<SMBus>
SMBus Frequency
FSMBus
10
-
400
kHz
SDA/SCL Input Low Voltage
VINL
0.0
-
0.8
V
SDA/SCL Input High Voltage
VINH
2.1
-
5.5
V
SDA Hold Time from SCL
TH(DAT)
250
-
-
ns
SDA Setup Time from SCL
TSU(DAT)
300
-
-
ns
Start Condition Hold Time from SCL
TH(STA)
4
-
-
µs
Start Condition Setup Time from SCL
TSU(STA)
4.7
-
-
µs
Stop Condition Setup Time from SCL
TSU(STOP)
4
-
-
µs
Bus Free Time
TBUF
4.7
-
-
µs
S
1
Slave Address
7
W
r
1
A
1
Command Code
8
A
1
Data Low Byte
8
A
1
Sr
1
Slave Address
7
R
d
1
A
1
Data High Byte
8
N
1
P
1
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
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BD99954MWV, BD99954GW
Datasheet
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.3. Command Code
BD99954 has 3 command maps, "Battery Charger Commands", "Extended Commands" and "Debug Commands". All commands
are addressed within 00h ~ 7Fh address area. And 80h ~ FFh address is a mirror of 00h ~ 7Fh.
"Battery Charger Commands" is a subset of "Smart Battery Charger Specification Revision 1.1."
"Extended Commands" is for charger function enhancement.
"Debug Commands" are used for debug purpose or in production test.
These are selectable by MAP_SET command.
8.3.1. Battery Charger Commands
Following is a table of "Battery Charger Commands" which BD99954 supports. "Battery Charger Commands" is subset of "Smart
Battery Charger Specification Revision 1.1."
Note: Reserved command should not be accessed. If accessed, operation is not guaranteed.
Code
Command
Protocols
Byte
Size
Description
14h
ChargingCurrent
Read/Write
Word
2
The Battery, System Host or other master device sends the desired charging
rate (mA).
This command is a mirror of ICHG_SET command of the extended
command.
15h
ChargingVoltage
Read/Write
Word
2
The Battery, System Host or other master device sends the desired charging
voltage to the Smart Battery Charger (mV).
This command is a mirror of VFASTCHG_REG_SET1 command of the
extended command.
3Ch
IBUS_LIM_SET
Read/Write
Word
2
VBUS Input Current Limit Setting.
This command is a mirror of IBUS_LIM_SET command of the extended
command.
3Dh
ICC_LIM_SET
Read/Write
Word
2
VCC Input Current Limit Setting.
This command is a mirror of ICC_LIM_SET command of the extended
command.
3Eh
PROTECT_SET
Read/Write
Word
2
Access Un-protect Setting for Address 3Fh
This command is a mirror of PROTECT_SET command of the extended
command.
3Fh
MAP_SET
Read/Write
Word
2
Change Command Code Map.
This command is a mirror of MAP_SET command of the extended
command.
Battery Charger
Commands
Extended
Commands
Debug
Commands
Subset of
“Smart Battery Charger Spec. Rev. 1.1”
For charger function enhancement.
- PMON, IOUT
- PROCHOT
- Power Path Management
- USB BC1.2 Detection
- Thermal Charging Profile
- etc.
For debug and production test.
PROTECT_SET : 16'h0000
MAP_SET : 16'h0000
PROTECT_SET : 16'h0000
MAP_SET : 16'h0001
PROTECT_SET : ****
MAP_SET : ****
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
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BD99954MWV, BD99954GW
Datasheet
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.3.2. Extended Commands
Following is a table of "Extended Commands" which BD99954 supports. "Extended Commands" is for charger function
enhancement.
Note: Reserved command should not be accessed. If accessed, operation is not guaranteed.
Code
Command
Protocols
Byte
Size
Description
00h
CHGSTM_STATUS
Read Word
2
Charger State Machine Status
01h
VBAT/VSYS_STATUS
Read Word
2
VBAT and VSYS Status
02h
VBUS/VCC_STATUS
Read Word
2
VBUS and VCC Status
03h
CHGOP_STATUS
Read Word
2
Charger Operation Status
04h
WDT_STATUS
Read Word
2
Charger WDT and Thermal WDT Status
05h
CUR_ILIM_VAL
Read Word
2
Actual Input Current Limit
06h
SEL_ILIM_VAL
Read Word
2
Selected Input Current Limit
07h
IBUS_LIM_SET
Read/Write Word
2
VBUS Input Current Limit Setting
08h
ICC_LIM_SET
Read/Write Word
2
VCC Input Current Limit Setting
09h
IOTG_LIM_SET
Read/Write Word
2
OTG Output Current Limit Setting
0Ah
VIN_CTRL_SET
Read/Write Word
2
VBUS and VCC Control Setting
0Bh
CHGOP_SET1
Read/Write Word
2
Charger Operation Control Setting 1
0Ch
CHGOP_SET2
Read/Write Word
2
Charger Operation Control Setting 2
0Dh
VBUSCLPS_TH_SET
Read/Write Word
2
VBUS Collapse Detect Threshold Voltage Setting
0Eh
VCCCLPS_TH_SET
Read/Write Word
2
VCC Collapse Detect Threshold Voltage Setting
0Fh
CHGWDT_SET
Read/Write Word
2
Charger WDT Setting
10h
BATTWDT_SET
Read/Write Word
2
Battery temperature and Battery short current WDT Setting
11h
VSYSREG_SET
Read/Write Word
2
VSYS Regulation Setting
12h
VSYSVAL_THH_SET
Read/Write Word
2
VSYS Valid Threshold High Setting (Hysteresis)
13h
VSYSVAL_THL_SET
Read/Write Word
2
VSYS Valid Threshold Low Setting (Hysteresis)
14h
ITRICH_SET
Read/Write Word
2
Trickle-charge Current Setting
15h
IPRECH_SET
Read/Write Word
2
Pre-charge Current Setting
16h
ICHG_SET
Read/Write Word
2
Fast-charge Current Setting
17h
ITERM_SET
Read/Write Word
2
Charge Termination Current Setting
18h
VPRECHG_TH_SET
Read/Write Word
2
Pre-charge Voltage Threshold Setting
19h
VRBOOST_SET
Read/Write Word
2
Reverse Buck Boost Voltage Setting
1Ah
VFASTCHG_REG_SET1
Read/Write Word
2
Fast Charge Voltage Regulation Setting 1
1Bh
VFASTCHG_REG_SET2
Read/Write Word
2
Fast Charge Voltage Regulation Setting 2 (Hot 1)
1Ch
VFASTCHG_REG_SET3
Read/Write Word
2
Fast Charge Voltage Regulation Setting 3 (Hot 2)
1Dh
VRECHG_SET
Read/Write Word
2
Re-charge Battery Voltage Setting
1Eh
VBATOVP_SET
Read/Write Word
2
Battery Over Voltage Protection Setting
1Fh
IBATSHORT_SET
Read/Write Word
2
Battery Short Current Protection Setting
20h
PROCHOT_CTRL_SET
Read/Write Word
2
PROCHOT# pin Control Setting
21h
PROCHOT_ICRIT_SET
Read/Write Word
2
Peak Input Current Threshold Setting for PROCHOT#
22h
PROCHOT_INORM_SET
Read/Write Word
2
Average Input Current Threshold Setting for PROCHOT#
23h
PROCHOT_IDCHG_SET
Read/Write Word
2
Dis-charge Current Threshold Setting for PROCHOT#
24h
PROCHOT_VSYS_SET
Read/Write Word
2
VSYS Voltage Threshold Setting for PROCHOT#
25h
PMON_IOUT_CTRL_SET
Read/Write Word
2
PMON and IOUT Output Control Setting
26h
PMON_DACIN_VAL
Read Word
2
PMON DAC Input Value
27h
IOUT_DACIN_VAL
Read Word
2
IOUT DAC Input Value
28h
VCC_UCD_SET
Read/Write Word
2
BC1.2 Charger Detector on the VCC side Setting
29h
VCC_UCD_STATUS
Read Word
2
BC1.2 Charger Detect Status on the VCC side
2Ah
VCC_IDD_STATUS
Read Word
2
ID Detect Status on the VCC side
2Bh
VCC_UCD_FCTRL_SET
Read/Write Word
2
BC1.2 Charger Detector on the VCC side Manual Control
Setting
2Ch
VCC_UCD_FCTRL_EN
Read/Write Word
2
BC1.2 Charger Detector on the VCC side Manual Control
Enable
2Dh
(reserved)
-
-
-
2Eh
(reserved)
-
-
-
2Fh
(reserved)
-
-
-
30h
VBUS_UCD_SET
Read/Write Word
2
BC1.2 Charger Detector on the VBUS side Setting
31h
VBUS_UCD_STATUS
Read Word
2
BC1.2 Charger Detect Status on the VBUS side
32h
VBUS_IDD_STATUS
Read Word
2
ID Detect Status
33h
VBUS_UCD_FCTRL_SET
Read/Write Word
2
BC1.2 Charger Detector on the VBUS side Manual Control
Setting
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
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BD99954MWV, BD99954GW
Datasheet
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
Code
Command
Protocols
Byte
Size
Description
34h
VBUS_UCD_FCTRL_EN
Read/Write Word
2
BC1.2 Charger Detector on the VBUS side Manual Control
Enable
35h
(reserved)
-
2
-
36h
(reserved)
-
-
-
37h
(reserved)
-
-
-
38h
CHIP_ID
Read Word
2
Chip ID
39h
CHIP_REV
Read Word
2
Chip Revision
3Ah
IC_SET1
Read/Write Word
2
1-Cell mode setting, ACP discharge control and ACOK
control setting.
3Bh
IC_SET2
Read/Write Word
2
IC Setting Register for debug and production test.
3Ch
SYSTEM_STATUS
Read Word
2
System Power-on Status
3Dh
SYSTEM_CTRL_SET
Read/Write Word
2
Software reset and re-load OTP
3Eh
PROTECT_SET
Read/Write Word
2
Access Un-protect Setting for Address FCh and FEh
3Fh
MAP_SET
Read/Write Word
2
Change Command Code Map to Debug Command Code
Map
40h
VM_CTRL_SET
Read/Write Word
2
SAR-ADC Measurement Control Setting
41h
THERM_WINDOW_SET1
Read/Write Word
2
JEITA Temperature Window Setting 1
42h
THERM_WINDOW_SET2
Read/Write Word
2
JEITA Temperature Window Setting 2
43h
THERM_WINDOW_SET3
Read/Write Word
2
JEITA Temperature Window Setting 3
44h
THERM_WINDOW_SET4
Read/Write Word
2
JEITA Temperature Window Setting 4
45h
THERM_WINDOW_SET5
Read/Write Word
2
JEITA Temperature Window Setting 5
46h
IBATP_TH_SET
Read/Write Word
2
Battery Current (Charge) Interrupt Threshold Setting
47h
IBATM_TH_SET
Read/Write Word
2
Battery Current (Dis-charge) Interrupt Threshold Setting
48h
VBAT_TH_SET
Read/Write Word
2
Battery Voltage Interrupt Threshold Setting
49h
THERM_TH_SET
Read/Write Word
2
Battery Temperature Interrupt Threshold Setting
4Ah
IACP_TH_SET
Read/Write Word
2
Input Current (between ACP-ACN) Interrupt Threshold
Setting
4Bh
VACP_TH_SET
Read/Write Word
2
Input Voltage (ACP) Interrupt Threshold Setting
4Ch
VBUS_TH_SET
Read/Write Word
2
VBUS Voltage Interrupt Threshold Setting
4Dh
VCC_TH_SET
Read/Write Word
2
VCC Voltage Interrupt Threshold Setting
4Eh
VSYS_TH_SET
Read/Write Word
2
VSYS Voltage Interrupt Threshold Setting
4Fh
EXTIADP_TH_SET
Read/Write Word
2
IADP (Input current Limit setting pin) Voltage Interrupt
Threshold Setting
50h
IBATP_VAL
Read Word
2
Battery Current (Charge) Measurement Value
51h
IBATP_AVE_VAL
Read Word
2
Battery Current (Charge) Measurement Average Value
52h
IBATM_VAL
Read Word
2
Battery Current (Dis-charge) Measurement Value
53h
IBATM_AVE_VAL
Read Word
2
Battery Current (Dis-charge) Measurement Average Value
54h
VBAT_VAL
Read Word
2
Battery Voltage Measurement Value
55h
VBAT_AVE_VAL
Read Word
2
Battery Voltage Measurement Average Value
56h
THERM_VAL
Read/Write Word
2
Temperature Measurement Value
57h
VTH_VAL
Read Word
2
Thermistor Measurement Voltage Value
58h
IACP_VAL
Read Word
2
Input Current (between ACP-ACN) Measurement Value
59h
IACP_AVE_VAL
Read Word
2
Input Current (between ACP-ACN) Measurement Average
Value
5Ah
VACP_VAL
Read Word
2
Input Voltage (ACP) Measurement Value
5Bh
VACP_AVE_VAL
Read Word
2
Input Voltage (ACP) Measurement Average Value
5Ch
VBUS_VAL
Read Word
2
VBUS Voltage Measurement Value
5Dh
VBUS_AVE_VAL
Read Word
2
VBUS Voltage Measurement Average Value
5Eh
VCC_VAL
Read Word
2
VCC Voltage Measurement Value
5Fh
VCC_AVE_VAL
Read Word
2
VCC Voltage Measurement Average Value
60h
VSYS_VAL
Read Word
2
VSYS Voltage Measurement Value
61h
VSYS_AVE_VAL
Read Word
2
VSYS Voltage Measurement Average Value
62h
EXTIADP_VAL
Read Word
2
IADP (Input current Limit setting pin) Voltage Measurement
Value
63h
EXTIADP_AVE_VAL
Read Word
2
IADP (Input current Limit setting pin) Voltage Measurement
Average Value
64h
VACPCLPS_TH_SET
Read/Write Word
2
VACP Collapse Detect Threshold Voltage Setting
65h
(reserved)
-
-
-
66h
(reserved)
-
-
-
67h
(reserved)
-
-
-
68h
INT0_SET
Read/Write Word
2
1st Level Interrupt Setting
69h
INT1_SET
Read/Write Word
2
2nd Level Interrupt Setting 1 (VBUS)
6Ah
INT2_SET
Read/Write Word
2
2nd Level Interrupt Setting 2 (VCC)
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
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BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
Code
Command
Protocols
Byte
Size
Description
6Bh
INT3_SET
Read/Write Word
2
2nd Level Interrupt Setting 3 (Battery)
6Ch
INT4_SET
Read/Write Word
2
2nd Level Interrupt Setting 4 (VSYS)
6Dh
INT5_SET
Read/Write Word
2
2nd Level Interrupt Setting 5 (Charger)
6Eh
INT6_SET
Read/Write Word
2
2nd Level Interrupt Setting 6 (Charger)
6Fh
INT7_SET
Read/Write Word
2
2nd Level Interrupt Setting 7 (SAR-ADC)
70h
INT0_STATUS
Read/Write Word
2
1st Level Interrupt Status
71h
INT1_STATUS
Read/Write Word
2
2nd Level Interrupt Status 1 (VBUS)
72h
INT2_STATUS
Read/Write Word
2
2nd Level Interrupt Status 2 (VCC)
73h
INT3_STATUS
Read/Write Word
2
2nd Level Interrupt Status 3 (Battery)
74h
INT4_STATUS
Read/Write Word
2
2nd Level Interrupt Status 4 (VSYS)
75h
INT5_STATUS
Read/Write Word
2
2nd Level Interrupt Status 5 (Charger)
76h
INT6_STATUS
Read/Write Word
2
2nd Level Interrupt Status 6 (Charger)
77h
INT7_STATUS
Read/Write Word
2
2nd Level Interrupt Status 7 (SAR-ADC)
78h
REG0
Read/Write Word
2
Reserved Register 0 (for future use)
79h
REG1
Read/Write Word
2
Reserved Register 1 (for future use)
7Ah
OTPREG0
Read/Write Word
2
Input current limit degradation setting.
7Bh
OTPREG1
Read/Write Word
2
Reserved OTP-loaded Register 1 (for future use)
7Ch
SMBREG
Read/Write Word
2
Power Save Mode Setting.
7Dh
(reserved)
-
-
-
7Eh
(reserved)
-
-
-
7Fh
DEBUG_MODE_SET
Read/Write Word
2
Debug Mode Setting
8.3.3. Debug Commands
Following is a table of "Debug Commands" which BD99954 supports. "Debug Commands" is used for debug purpose or in
production test.
Note: Reserved command should not be accessed. If accessed, operation is not guaranteed.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
26/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.4. Battery Charger Commands Description
Following is a description of " Battery Charger Commands " that are supported by BD99954.
8.4.1. ChargingCurrent
The Battery, System Host or other master device sends the desired charging rate (mA).
Command Code:
14h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
ICHG_SET[13]
Charging current setting.
0 to 16,320mA, 64mA steps.
12
ICHG_SET[12]
11
ICHG_SET[11]
10
ICHG_SET[10]
9
ICHG_SET[9]
8
ICHG_SET[8]
7
ICHG_SET[7]
6
ICHG_SET[6]
5
reserved
4
reserved
3
reserved
2
reserved
1
reserved
0
reserved
8.4.2. ChargingVoltage
The Battery, System Host or other master device sends the desired charging voltage to the Smart Battery Charger (mV).
Command Code:
15h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VFASTCHG_REG_SET1[14]
Charging Regulation Voltage.
3,072 to 19,200mV, 16mV steps.
13
VFASTCHG_REG_SET1[13]
12
VFASTCHG_REG_SET1[12]
The register range : 0 to 32,752mV.
11
VFASTCHG_REG_SET1[11]
But the actual range : 3,072 to 19,200mV.
10
VFASTCHG_REG_SET1[10]
9
VFASTCHG_REG_SET1[9]
8
VFASTCHG_REG_SET1[8]
7
VFASTCHG_REG_SET1[7]
6
VFASTCHG_REG_SET1[6]
5
VFASTCHG_REG_SET1[5]
4
VFASTCHG_REG_SET1[4]
3
reserved
2
reserved
1
reserved
0
reserved
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.4.3. IBUS_LIM_SET
VBUS Input Current Limit Setting
Command Code:
3Ch
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
IBUS_LIM_SET1[13]
VBUS input current limitation.
12
IBUS_LIM_SET1[12]
0 to 16,352mA, 32mA steps.
11
IBUS_LIM_SET1[11]
10
IBUS_LIM_SET1[10]
9
IBUS_LIM_SET1[9]
8
IBUS_LIM_SET1[8]
7
IBUS_LIM_SET1[7]
6
IBUS_LIM_SET1[6]
5
IBUS_LIM_SET1[5]
4
reserved
3
reserved
2
reserved
1
reserved
0
reserved
8.4.4. ICC_LIM_SET
VCC Input Current Limit Setting
Command Code:
3Dh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
ICC_LIM_SET1[13]
VCC input current limitation.
12
ICC_LIM_SET1[12]
0 to 16,352mA, 32mA steps.
11
ICC_LIM_SET1[11]
10
ICC_LIM_SET1[10]
9
ICC_LIM_SET1[9]
8
ICC_LIM_SET1[8]
7
ICC_LIM_SET1[7]
6
ICC_LIM_SET1[6]
5
ICC_LIM_SET1[5]
4
reserved
3
reserved
2
reserved
1
reserved
0
reserved
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
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Datasheet
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.4.5. PROTECT_SET
Access Un-protect Setting for the “debug command map” (debug and production test only)
Command Code:
3Eh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
PROTECT_SET[15]
Access Un-protect Setting for the “debug command map”
14
PROTECT_SET[14]
(debug and production test only)
13
PROTECT_SET[13]
12
PROTECT_SET[12]
11
PROTECT_SET[11]
10
PROTECT_SET[10]
9
PROTECT_SET[9]
8
PROTECT_SET[8]
7
PROTECT_SET[7]
6
PROTECT_SET[6]
5
PROTECT_SET[5]
4
PROTECT_SET[4]
3
PROTECT_SET[3]
2
PROTECT_SET[2]
1
PROTECT_SET[1]
0
PROTECT_SET[0]
8.4.6. MAP_SET
Change Command Code Map
Command Code:
3Fh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
MAP_SET [15]
Change Command Code Map
14
MAP_SET [14]
13
MAP_SET[13]
12
MAP_SET[12]
11
MAP_SET[11]
10
MAP_SET[10]
9
MAP_SET[9]
8
MAP_SET[8]
7
MAP_SET[7]
6
MAP_SET[6]
5
MAP_SET[5]
4
MAP_SET[4]
3
MAP_SET[3]
2
MAP_SET[2]
1
MAP_SET[1]
0
MAP_SET[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
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Datasheet
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5. Extended Commands Description
Following is a description of "Extended Commands" that are supported by BD99954.
8.5.1. CHGSTM_STATUS
Charger State Machine Status
Command Code:
00h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
PREV_CHGSTM_STATE[6]
The previous state of the charger state-machine.
13
PREV_CHGSTM_STATE[5]
12
PREV_CHGSTM_STATE[4]
11
PREV_CHGSTM_STATE[3]
10
PREV_CHGSTM_STATE[2]
9
PREV_CHGSTM_STATE[1]
8
PREV_CHGSTM_STATE[0]
7
reserved
6
CHGSTM_STATE[6]
The current state of the charger state-machine.
5
CHGSTM_STATE[5]
4
CHGSTM_STATE[4]
3
CHGSTM_STATE[3]
2
CHGSTM_STATE[2]
1
CHGSTM_STATE[1]
0
CHGSTM_STATE[0]
State definition.
CHGSTM_STATE
State Name
Description
PREV_CHGSTM_STATE
00h
Suspend
Suspend charging
01h
Trickle-Charge
Trickle-charging
02h
Pre-Charge
Pre-charging
03h
Fast-Charge
Fast Charging
04h
Top-off
Reached to Termination Current
05h
Done
Charging finished
08h
OTG
USB On The Go (Reverse Buck Boost Operation)
09h
OTG Done
OTG Done
10h
Temperature Error 1
Out of standard temperature while Suspend State
11h
Temperature Error 2
Out of standard temperature while Trickle-Charge State
12h
Temperature Error 3
Out of standard temperature while Pre-Charge State
13h
Temperature Error 4
Out of standard temperature while Fast-Charge State
14h
Temperature Error 5
Out of standard temperature while Top-off State
15h
Temperature Error 6
Out of standard temperature while after Top-off State (DONE)
18h
Temperature Error 7
Out of standard temperature while OTG State
20h
Thermal Shut Down 1
Thermal Shut Down while Suspend State
21h
Thermal Shut Down 2
Thermal Shut Down while Trickle-Charge State
22h
Thermal Shut Down 3
Thermal Shut Down while Pre-Charge State
23h
Thermal Shut Down 4
Thermal Shut Down while Fast-Charge State
24h
Thermal Shut Down 5
Thermal Shut Down while Top-off State
25h
Thermal Shut Down 6
Thermal Shut Down after Top-off State (DONE)
28h
Thermal Shut Down 7
Thermal Shut Down while OTG State
40h
Battery Error
Battery Error
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
Suspend
(00h)
Trickle-Charge
(01h)
Fast-Charge
(03h)
Top-off
(04h)
Done
(05h)
OTG
(08h)
Temperature Error 4
(13h)
Thermal Shut Down 4
(23h)
Temperature Error 5
(14h)
Thermal Shut Down 5
(24h)
Temperature Error 6
(15h)
Thermal Shut Down 6
(25h)
Temperature Error 7
(18h)
Thermal Shut Down 7
(28h)
Temperature Error 2
(11h)
Thermal Shut Down 2
(21h)
Temperature Error 1
(10h)
Thermal Shut Down 1
(20h)
Battery Error
(40h)
(12)
(12)
(12)
(12)
(12)
(12)
(12)
(12)
(12)
(12)
(12)
(9)
(0)
(1)
(2)
(4)
(5)
(6)
(7)
(10)
(10)
(10)
(10)
(11)
(11)
(11)
(11)
(11)
(11)
(10)
(10)
(13)
Pre-Charge
(02h)
Temperature Error 3
(12h)
Thermal Shut Down 3
(22h)
(12)
(12)
(3)
(10)
(11)
OTG Done
(09h)
(8)
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
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BD99954MWV, BD99954GW
Datasheet
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
Arc
Condition
#
to next state
back to previous state
(0)
CHG_EN is 0, disabled or USB_SUS is 1, suspended.
-----
or
VBUS and VCC and VACP are undetected or disabled.
or
Thermistor is open.
or
Power Path is changed.
or
Anti-collapse is occurred.
or
VSYS SCP timer is expired (20ms).
(1)
VBUS or VCC or VACP detected.
-----
and
SDP_CHG_TRIG bit set if SDP_CHG_TRIG_EN=1 and
SDP port detected.
and
Charge enable.
and
DCDC Soft-started.
and
State Transition Timer expired (25ms).
and
No anti-collapse occurred.
and
No Vsys short occurred.
(2)
VBAT > VPRECHG_TH_SET
-
VBAT <= VPRECHG_TH_SET
and
State Transition Timer expired (25ms).
and
State Transition Timer expired (25ms).
(3)
VBAT > VSYSREG_SET
VBAT <= VSYSREG_SET
and
AUTO_FST=1
and
State Transition Timer expired (25ms).
and
State Transition Timer expired (25ms).
(4)
ITERM comparotor asserted.
ITERM comparotor deasserted or VBAT <=
Re-charge Battery Voltage
and
AUTO_TOF=1
and
State Transition Timer expired (25ms).
and
VBAT > Re-charge Battery Voltage
and
State Transition Timer expired (25ms).
(5)
Charging Termination Timer expired (15s).
-----
(6)
-----
VBAT <= Re-charge Battery Voltage
and
State Transition Timer expired (25ms).
(7)
OTG Device is detected or VRBOOST_EN is enabled.
-----
and
VRBOOST_TRIG=1
and
VBUS and VCC and VACP is undetected.
and
Power Path with OTG Device is enabled,
VBUS_EN/VCC_EN=1
and
State Transition Timer expired (25ms).
(8)
OTG Device is undetected or VRBOOST_EN is disabled
or VRBOOST_TRIG=0.
-----
and
State Transition Timer expired (25ms).
(9)
State Transition Timer expired (25ms).
-----
and
Reverse Buck Boost Voltage is under UVLO level.
(10)
TSD comparator asserted.
TSD comparator de-asserted.
and
State Transition Timer expired (25ms).
(11)
Thermal range is HOT3 or COLD2.
Thermal range isn't HOT3 and COLD2.
and
State Transition Timer expired (25ms).
and
State Transition Timer expired (25ms).
(12)
Charger WDT is expired or Thermal WDT is expired
-----
or VBAT >= Battery Over voltage
(13)
<Charging>
-----
VBAT < Battery Over voltage
and
Charge is disabled or suspended.
Or VBUS and VCC and VACP are undetected or disabled.
Or Thermistor is open.
Or Power Path is changed.
<OTG>
OTG Device is undetected or RBOOST_EN is disabled.
or USB_SUS=1, suspended.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
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18. Jul. 2017, Rev.001
8.5.2. VBAT/VSYS_STATUS
VBAT and VSYS Status
Command Code:
01h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
VSYS_OV
VSYS over-voltage status.
“1”: VSYS > VSYS_OVP / “0”: VSYS < VSYS_OVP
14
VSYS_SSD
DCDC Soft-Start completion status.
“1”: Soft-Start finished / “0”: Not finished.
13
VSYS_SCP
VSYS short-circuit detection status.
“1”: VSYS SCP timer expired. / “0”: Normal operation.
12
VSYS_UVN
VSYS UVLO detection status.
“1”: Low voltage. / “0”: Normal voltage.
11
reserved
10
reserved
9
reserved
8
reserved
7
reserved
6
IBAT_SHORT
Battery short-circuits detection status.
“1”: Battery Short Current Detected / “0”: Normal operation
5
reserved
4
reserved
3
VBAT_OV
VBAT over-voltage Status.
“1”: VBAT > VBAT_OVP / “0”: VBAT < VBAT_OVP with Hysteresis
2
reserved
1
reserved
0
DEAD_BAT
Dead Battery status.
“1”: Dead Battery, VBAT < VSYSREG_SET, Detected / “0”: Normal
operation, VBAT >= VSYSREG_SET.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.3. VBUS/VCC_STATUS
VBUS and VCC Status
Command Code:
02h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
VACP_DET
VACP_detection status.
“1”: VACP detected (over UVLO level) / “0”: not detected or low level.
11
VCC_OVP
VCC/VACP over-voltage status.
"1":VCC > VCC_OVP / "0":Normal voltage. (When VCC_EN = 1)
"1":VACP > VCC_OVP / "0":Normal voltage.
(When VCC_EN = VBUS_EN = 0)
10
ILIM_VCC_MOD
VCC/VACP input current limit control status.
“1”: VCC input current limit controlled. / “0”: No. (When VCC_EN = 1)
“1”: VACP input current limit controlled. / “0”: No.
(When VCC_EN = VBUS_EN = 0)
9
VCC_CLPS
VCC/VACP anti-collapse status.
“1”: VCC Anti-collapse / “0”: normal operation. (When VCC_EN = 1)
“1”: VACP Anti-collapse / “0”: normal operation.
(When VCC_EN = VBUS_EN = 0)
8
VCC_DET
VCC detection status.
“1”: VCC detected (over UVLO level) / “0”: not detected or low level.
7
reserved
6
reserved
5
reserved
4
reserved
3
VBUS_OVP
VBUS over -voltage status.
“1”: VBUS > VBUS_OVP / “0”: Normal voltage.
2
ILIM_VBUS_MOD
VBUS current limit control statusStatus.
“1”: Limit controlled. / “0”: No.
1
VBUS_CLPS
VBUS anti-collapse status.
“1”: Anti-collapse / “0”: normal operation.
0
VBUS_DET
VBUS detection status.
“1”: VBUS detected (over UVLO level) / “0”: not detected or low level.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.4. CHGOP_STATUS
Charger Operation Status
Command Code:
03h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
BATTEMP[2]
Battery temperature range and the thermistor status.
9
BATTEMP[1]
Please see next table.
8
BATTEMP[0]
7
reserved
6
VRECHG_DET
Re-charge voltage detection status.
“1”: VBAT < VRECHG_SET / “0”: VBAT keeps enough voltage.
5
reserved
4
reserved
3
reserved
2
reserved
1
RBOOST_UV
Reverse Buck Boost UVLO detection status.
“1”: Normal voltage. / “0”: Low voltage.
0
RBOOSTS
Reverse Buck Boost status.
“1”: Boosting / “0”: Not boosting.
BAT_TEMP
Temperature Range
Description
0h
Room Temp
T2 < Tbat < T3
1h
HOT1
T3 < Tbat < T5
2h
HOT2
T5 < Tbat < T4
3h
HOT3
T4 < Tbat
4h
COLD1
T1 < Tbat < T2
5h
COLD2
Tbat < T1
6h
Temp. Disable
Disable thermal control (No Thermistor)
7h
Battery Open
TSENSE_BAT port is open.
Register Name
Description
Default Value
Note
TMPTHR1A[7:0]
Lower threshold of T1
C6h ( 2 deg.)
T1 in JEITA profile
TMPTHR1B[7:0]
Upper threshold of T1
C3h ( 5 deg.)
T1 in JEITA profile
TMPTHR2A[7:0]
Lower threshold of T2
BEh (10 deg.)
T2 in JEITA profile
TMPTHR2B[7:0]
Upper threshold of T2
BBh (13 deg.)
T2 in JEITA profile
TMPTHR3A[7:0]
Lower threshold of T3
9Eh (42 deg.)
T3 in JEITA profile
TMPTHR3B[7:0]
Upper threshold of T3
9Bh (45 deg.)
T3 in JEITA profile
TMPTHR4A[7:0]
Lower threshold of T4
91h (55 deg.)
T4 in JEITA profile
TMPTHR4B[7:0]
Upper threshold of T4
8Eh (58 deg.)
T4 in JEITA profile
TMPTHR5A[7:0]
Lower threshold of T5
9Dh (47 deg.)
Between T3 and T4
TMPTHR5B[7:0]
Upper threshold of T5
96h (50 deg.)
Between T3 and T4
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.5. WDT_STATUS
Charger WDT and Battery Temperature WDT Status
Command Code:
04h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
THERMWDT_VAL[7]
Current Battery Temperature Watch-dog Timer Count Value
14
THERMWDT_VAL[6]
0 to 255 minutes, 1-minute steps.
13
THERMWDT_VAL[5]
12
THERMWDT_VAL[4]
11
THERMWDT_VAL[3]
10
THERMWDT_VAL[2]
9
THERMWDT_VAL[1]
8
THERMWDT_VAL[0]
7
CHGWDT_VAL[7]
Current Charge Watch-dog Timer Count Value
6
CHGWDT_VAL[6]
For pre-charging, 0 to 255 minutes, 1-minute steps.
5
CHGWDT_VAL[5]
For fast-charging, 0 to 1020 minutes, 4-minutes steps.
4
CHGWDT_VAL[4]
3
CHGWDT_VAL[3]
2
CHGWDT_VAL[2]
1
CHGWDT_VAL[1]
0
CHGWDT_VAL[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.6. CUR_ILIM_VAL
Actual Input Current Limit
Command Code:
05h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
reserved
13
CUR_ILIM_VAL[13]
Current Input Current Limit Value
12
CUR_ILIM_VAL[12]
0 to 16,383mA, 1mA steps.
11
CUR_ILIM_VAL[11]
10
CUR_ILIM_VAL[10]
9
CUR_ILIM_VAL[9]
8
CUR_ILIM_VAL[8]
7
CUR_ILIM_VAL[7]
6
CUR_ILIM_VAL[6]
5
CUR_ILIM_VAL[5]
4
CUR_ILIM_VAL[4]
3
CUR_ILIM_VAL[3]
2
CUR_ILIM_VAL[2]
1
CUR_ILIM_VAL[1]
0
CUR_ILIM_VAL[0]
Input current limit functions.
-n
1/2
Input current limit control
and soft start
Peak power
control
IBUS_LIM_SET
ICC_LIM_SET
BC1.2 Port Detection
Or 100ms-timer expired
SEL_ILIM_VAL
CUR_ILIM_VAL
Input current limit
selector
+1 A>B
Compare
B
A
A=B
A<B
Anti-Collapse
A
20ms Timer
High
Low
200%~100%
100%~50%
Input Current Limit
IADP pin Input current limit
Input current limit selector:
The “Input current limit selector” block selects an original input current limit from the register setting or detected BC1.2,
DCP/CDP/SDP, result.
Input current limit control and soft start:
The “Input current limit control and soft start” block controls the input current limit slope 1mA/10us for soft start. And this block
modifies the input current limit, -N or 1/2, when the anti-collapse occurs.
Peak power control:
The “Peak power control” block controls the peak of the input current limit. It is defined by VIN_CTRL_SET.PPC_CAP[1:0] and
PPC_SUB_CAP[1:0] registers.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
Sample case timing chart: Input current limit with peak control.
a) After setting the input current limit, the anti-collapse occurred.
VBUS Plugged.VBUS
BC1.2 Detecting or 100ms Waiting BC1.2 Detected or 100ms WaitedBC1.2 Detector
SEL_ILIM_VAL
CUR_ILIM_VAL
Input Current Limit
Initial = 100mA
3,000mA for example.
The anti-collapse occurred,
after setting the input current limit.
Step-up, 1mA/10us
20ms
1/2 step back,
because of the anti-collapse.
3,000mA
1,500mA
2,250mA
3,750mA
1,875mA
1,125mA
The peak power is controlled on the basis of a value of
the CUR_ILIM_VAL.
For example, the duty is 125%/10ms and 75%/10ms.
100ms~312ms typ.
b) During setting the input current limit, the anti-collapse occurred.
VBUS Plugged.VBUS
BC1.2 Detecting or 100ms Waiting BC1.2 Detected or 100ms WaitedBC1.2 Detector
SEL_ILIM_VAL
CUR_ILIM_VAL
Input Current Limit
Initial = 100mA
3,000mA for example.
The anti-collapse occurred,
during setting the input current limit.
Step-up, 1mA/10us
-N step back, because of the anti-collapse.
The peak power is controlled on the basis of a value of
the CUR_ILIM_VAL.
For example, the duty is 125%/10ms and 75%/10ms.
20ms
2,000mA
1,500mA
2,500mA
100ms~312ms typ.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
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Datasheet
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
Peak input current control operation is defined by VIN_CTRL_SET.PPC_CAP[1:0] and PPC_SUB_CAP[1:0] as
belowdemonstrates.
150.0%
97.0%
125.0%
97.0%
110.0%
90.0%
200.0%
95.0%
150.0%
94.0%
125.0%
75.0%
200.0%
95.0%
175%
92.0%
150.0%
50.0%
PPC_CAP=01b
PPC_CAP=01b
PPC_CAP=11b
1ms
20ms
PPC_SUB_CAP=00bPPC_SUB_CAP=01bPPC_SUB_CAP=10b
PPC_SUB_CAP=00bPPC_SUB_CAP=01bPPC_SUB_CAP=10b
PPC_SUB_CAP=00bPPC_SUB_CAP=01bPPC_SUB_CAP=10b
2ms
20ms 20ms
10ms
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
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Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.7. SEL_ILIM_VAL
Selected Input Current Limit
Command Code:
06h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
reserved
13
SEL_ILIM_VAL[13]
Selected Input Current Limit Setting
12
SEL_ILIM_VAL[12]
0 to 16,383mA, 1mA steps.
11
SEL_ILIM_VAL[11]
10
SEL_ILIM_VAL[10]
9
SEL_ILIM_VAL[9]
8
SEL_ILIM_VAL[8]
7
SEL_ILIM_VAL[7]
6
SEL_ILIM_VAL[6]
5
SEL_ILIM_VAL[5]
4
SEL_ILIM_VAL[4]
3
SEL_ILIM_VAL[3]
2
SEL_ILIM_VAL[2]
1
SEL_ILIM_VAL[1]
0
SEL_ILIM_VAL[0]
8.5.8. IBUS_LIM_SET
VBUS Input Current Limit Setting
Command Code:
07h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
IBUS_LIM_SET[13]
VBUS input current limitation.
12
IBUS_LIM_SET[12]
0 to 16,352mA, 32mA steps.
11
IBUS_LIM_SET[11]
10
IBUS_LIM_SET[10]
9
IBUS_LIM_SET[9]
8
IBUS_LIM_SET[8]
7
IBUS_LIM_SET[7]
6
IBUS_LIM_SET[6]
5
IBUS_LIM_SET[5]
4
reserved
3
reserved
2
reserved
1
reserved
0
reserved
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
40/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.9. ICC_LIM_SET
VCC/VACP Input Current Limit Setting
Command Code:
08h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
ICC_LIM_SET[13]
VCC input current limitation. (When VCC_EN=1)
12
ICC_LIM_SET[12]
VACP input current limitation. (When VCC_EN=VBUS_EN=0)
11
ICC_LIM_SET[11]
0 to 16,352mA, 32mA steps.
10
ICC_LIM_SET[10]
9
ICC_LIM_SET[9]
8
ICC_LIM_SET[8]
7
ICC_LIM_SET[7]
6
ICC_LIM_SET[6]
5
ICC_LIM_SET[5]
4
reserved
3
reserved
2
reserved
1
reserved
0
reserved
8.5.10. IOTG_LIM_SET
OTG Output Current Limit Setting
Command Code:
09h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
IOTG_LIM_SET[13]
VBUS/VCC output current limit when OTG.
12
IOTG_LIM_SET[12]
0 to 16,352mA, 32mA steps.
11
IOTG_LIM_SET[11]
10
IOTG_LIM_SET[10]
9
IOTG_LIM_SET[9]
8
IOTG_LIM_SET[8]
7
IOTG_LIM_SET[7]
6
IOTG_LIM_SET[6]
5
IOTG_LIM_SET[5]
4
reserved
3
reserved
2
reserved
1
reserved
0
reserved
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
41/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.11. VIN_CTRL_SET
VBUS and VCC Control Setting
Command Code:
0Ah
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
OTG_BOTH_EN
"Enabling OTG reverse buck boost output to VBUS and VCC both.
“1”: Enable / “0”: Disable."
When OTG_BOTH_EN=1 and VBUS_EN=VCC_EN=1, OTG reverse buck
boost output same voltage at VBUS and VCC,
VBUS=VCC=VRBOOST_SEL[14:6].
14
VRBOOST_TRIG
Reverse buck Boost operation Trigger.
“1”: Trigger/ “0”; No trigger
13
VRBOOST_EN[1]
Enabling VCC Reverse buck Boost operation.
“1”: Enable / “0”: Disable.
12
VRBOOST_EN[0]
Enabling VBUS Reverse buck Boost operation.
“1”: Enable / “0”: Disable.
11
PP_BOTH_THRU
"Enabling output to VBUS and VCC both.
“1”: Enable / “0”: Disable."
When PP_BOTH_THRU=1 and VBUS_EN=VCC_EN=1,
VIN_ORD=0 : Power path output same voltage from VCC to VBUS,
VIN_ORD=1 : Power path output same voltage from VBUS to VCC.
10
reserved
9
reserved
8
reserved
7
VIN_ORD
VBUS / VCC input priority.
“1”: VBUS prior / “0”: VCC prior.
6
VBUS_EN
Enabling VBUS input.
“1”: Enable / “0”: Disable.
5
VCC_EN
Enabling VCC input.
“1”: Enable / “0”: Disable.
4
VSYS_PRIORITY
Disabling the input current limit for avoiding VSYS drop when VBAT is the
dead-battery, VBAT is < VSYSREG_SET.
“1”: Disable the input current limit / “0”: Enable the input current limit.
3
PPC_SUB_CAP[1]
Power source peak current sub-capability
2
PPC_SUB_CAP[0]
1
PPC_CAP[1]
Power source peak current capability
0
PPC_CAP[0]
PPC_CAP
PPC_SUB_CAP
Overload Capabilities Description
00b
*b
Peak current equals (IBUS_LIM_SET or ICC_LIM_SET) .
01b
00b
Peak current equals 150.0% (IBUS_LIM_SET or ICC_LIM_SET) for 1ms.
Low current equals 97.0% (IBUS_LIM_SET or ICC_LIM_SET) for 19ms.
01b
Peak current equals 125.0% (IBUS_LIM_SET or ICC_LIM_SET) for 2ms.
Low current equals 97.0% (IBUS_LIM_SET or ICC_LIM_SET) for 18ms.
10b
Peak current equals 110.0% (IBUS_LIM_SET or ICC_LIM_SET) for 10ms.
Low current equals 90.0% (IBUS_LIM_SET or ICC_LIM_SET) for 10ms.
10b
00b
Peak current equals 200.0% (IBUS_LIM_SET or ICC_LIM_SET) for 1ms.
Low current equals 95.0% (IBUS_LIM_SET or ICC_LIM_SET) for 19ms.
01b
Peak current equals 150.0% (IBUS_LIM_SET or ICC_LIM_SET) for 2ms.
Low current equals 94.0% (IBUS_LIM_SET or ICC_LIM_SET) for 18ms.
10b
Peak current equals 125.0% (IBUS_LIM_SET or ICC_LIM_SET) for 10ms.
Low current equals 75.0% (IBUS_LIM_SET or ICC_LIM_SET) for 10ms.
11b
00b
Peak current equals 200.0% (IBUS_LIM_SET or ICC_LIM_SET) for 1ms.
Low current equals 95.0% (IBUS_LIM_SET or ICC_LIM_SET) for 19ms.
01b
Peak current equals 175.0% (IBUS_LIM_SET or ICC_LIM_SET) for 2ms.
Low current equals 92.0% (IBUS_LIM_SET or ICC_LIM_SET) for 18ms.
10b
Peak current equals 150.0% (IBUS_LIM_SET or ICC_LIM_SET) for 10ms.
Low current equals 50.0% (IBUS_LIM_SET or ICC_LIM_SET) for 10ms.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
42/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
Power Path Controll Flow chart
Path through mode : ON
Power supply from VCC to VBUS
Check Input port Status to Charger
SMBus Read VBUS/VCC_STATUS(Address 02h)
Check Status to PDIC
VCC side PD type
VBUS side PD type
Address 02h : VBUS/VCC_STATUS = [xxx00xx1xxxx0xx0]
Bit12 : VACP_DET = 0
Bit11 : VCC_OVP = 0
Bit9 : VCC_DET = 1
Bit3 : VBUS_OVP = 0
Bit0 : VBUS_DET = 0
VCC side PD type < VBUS side PD type
Return Data
Return Data
Enter Path through from VCC to VBUS mode
SMBus write VIN_CTRL_SET(Address 0Ah) =
[00001000011xxxxx]
Bit11 : PP_BOTH_THRU = 1
Bit7 : VIN_ORD = 0 (VCC prior)
Bit6,5 : VBUS_EN=VCC_EN=1
Enter Path Through Mode
Change Command Map into Extended Command Map
SMBus Write MAP_SET(Address 3Fh) = 01h
Command Map is Extended Command Map
VBUS/VCC pluged-in
Negotiation
ACOK flag
Charger EC PDIC
Power supply from VBUS to VCC
Check Input port Status to Charger
SMBus Read VBUS/VCC_STATUS(Address 02h)
Check Status to PDIC
VCC side PD type
VBUS side PD type
Address 02h : VBUS/VCC_STATUS = [xxx00xx0xxxx0xx1]
Bit12 : VACP_DET = 0
Bit11 : VCC_OVP = 0
Bit9 : VCC_DET = 0
Bit3 : VBUS_OVP = 0
Bit0 : VBUS_DET = 1
VCC side PD type >= VBUS side PD type
Return Data
Return Data
Enter Path through from VCC to VBUS mode
SMBus write VIN_CTRL_SET(Address 0Ah) =
[00001000111xxxxx]
Bit11 : PP_BOTH_THRU = 1
Bit7 : VIN_ORD = 1 (VBUS prior)
Bit6,5 : VBUS_EN=VCC_EN=1
Enter Path Through Mode
Change Command Map into Extended Command Map
SMBus Write MAP_SET(Address 3Fh) = 01h
Command Map is Extended Command Map
VBUS/VCC pluged-in
Negotiation
ACOK flag
Charger EC PDIC
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
43/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
Path through mode : OFF
Exit Path through mode
SMBus write VIN_CTRL_SET(Address 0Ah) =
[00000000x11xxxxx]
Bit11 : PP_BOTH_THRU = 1
Bit7 : VIN_ORD = previous value
Bit6,5 : VBUS_EN=VCC_EN=1
Exit Path Through Mode
Change Command Map into Extended Command Map
SMBus Write MAP_SET(Address 3Fh) = 01h
Command Map is Extended Command Map
VBUS or VCC plugged-out
Recognized Disconnect
Charger EC PDIC
Interrupt from INT#
Charger detect under voltage output port
Return Data
Check Status to Charger
SMBus Read INT1_STATUS(Address 71h) and
INT2_STATUS(Address 72h) and INT7_STATUS(Address
77h).
Clear Status resister to Charger
SMBus Write INT0_STATUS(Address 70h) = 0000h
Clear status resister
Timing Chart
Path Through mode after VBUS input
BC1.2 Detecting/Waiting
VBUS
VBUS_UVLO_A
DCDC_STB
DCDC_CTRL
VBUS_PowerPath
CTRL
VCC_PowerPath
CTRL
VCC
VCC_UVLO_A
(VBUS UCD)
(VCC UCD)
DCDC_STB
VBUS UVLO release
Start BC1.2 detection or Timer 100ms
VCC_PP=OFF
VBUS_PP=ON
Finish detection and dcdc start.
VCC UVLO release VCC UVLO
ILIM Default
Detected/WaitedDefault
Default
DCDC Stand-by
Default
VBUS plugged-out
DCDC stop after UVLO detect.
VBUS_UVLO_D
VCC_UVLO_D
VBUS_LOAD
VCC_LOAD
Red Italic；Power
Blue Italic : Analog Signal
Black ； Internal Digital Signal
ACP
ACP_UVLO
DCDC_CTRL is "H” after ACP_UVLO is “H”
SET (VBUS) Default
PP_BOTH_THRU
PATH_THRU_EN
VCC UVLO disable when through operation VCC UVLO disable during discharge
Both port set discharge signal during
20ms after path through mode finish.
Finished path through mode
Start path through
mode
Need discharge for Co
Green ； Resister settings
VIN_ORD VIN_ORD have to fix input port side
Both port is discharged during
20ms
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
44/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
VBUS path through mode after resister setting
BC1.2 Detecting/Waiting
VBUS
VBUS_UVLO_A
DCDC_STB
DCDC_CTRL
VBUS_PPCTRL
VCC_PPCTRL
VCC
VCC_UVLO_A
(VBUS UCD)
(VCC UCD)
DCDC_STB
VBUS UVLO release
Start BC1.2 detection or Timer 100ms
VCC_PP=ON
VBUS_PP=ON
Finish detection and dcdc start.
VCC UVLO release VCC UVLO
ILIM Default
Detected/WaitedDefault
Default
DCDC Stand-by
Default
VBUS plugged-out
DCDC stop after UVLO detect.
VBUS_UVLO_D
VCC_UVLO_D
VBUS_LOAD
VCC_LOAD
ACP
ACP_UVLO
DCDC_CTRL is "H” after ACP_UVLO is “H”
SET (VBUS) Default
PP_BOTH_THRU
PATH_THRU_EN
VCC UVLO disable when through operation VCC UVLO disable during discharge
Both port set discharge signal during
20ms after path through mode finish.
Finished path through mode
Start path through mode
Need discharge from capacitor.
Resister reset when power path turn off.
If path through mode goes again, resister is setting again.
VIN_ORD have to fix input port side
VIN_ORD
Both port is discharged
during 20ms
Red Italic；Power
Blue Italic : Analog Signal
Black ； Internal Digital Signal
Green ； Resister settings
Detect OVP at Output port
BC1.2 Detecting/Waiting
VBUS
VBUS_UVLO_A
DCDC_STB
DCDC_CTRL
VBUS_PPCTRL
VCC_PPCTRL
VCC
VCC_UVLO_A
(VBUS UCD)
(VCC UCD)
DCDC_STB
VBUS UVLO release
Start BC1.2 detection or Timer 100ms
VCC_PP=OFF
VBUS_PP=ON
Finish detection and dcdc start.
VCC UVLO release VCC UVLO
ILIM Default
Detected/WaitedDefault
Default
VBUS_UVLO_D
VCC_UVLO_D
VBUS_LOAD
VCC_LOAD
ACP
ACP_UVLO
DCDC_CTRL is "H” after ACP_UVLO is “H”
SET (VBUS)
PP_BOTH_THRU
PATH_THRU_EN
VCC UVLO disable when through operation
Finished path through mode
Set path through mode
VBUS_OVP
VCC_OVP
Exit path through mode until release OVP
condition.
VCC power path turn off and discharge
Both port set discharge signal during
20ms after path through mode finish.
VIN_ORD have to fix input port side
VIN_ORD
VCC UVLO disable during discharge
DCDC doesn't stop until detect output port OVP
Resister reset when OVP detection
Red Italic；Power
Blue Italic : Analog Signal
Black ； Internal Digital Signal
Green ； Resister settings
Both port is discharged during
20ms
Detect OVP at Input port
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
45/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
BC1.2 Detecting/Waiting
VBUS
VBUS_UVLO_A
DCDC_STB
DCDC_CTRL
VBUS_PPCTRL
VCC_PPCTRL
VCC
VCC_UVLO_A
(VBUS UCD)
(VCC UCD)
DCDC_STB
VBUS UVLO release
Start BC1.2 detection or Timer 100ms
VCC_PP OFF
VBUS_PP=ON
Finish detection and dcdc start.
VCC UVLO release VCC UVLO
ILIM Default
Detected/WaitedDefault
Default
DCDC Stand-by
VBUS_UVLO_D
VCC_UVLO_D
VBUS_LOAD
VCC_LOAD
ACP
ACP_UVLO
DCDC_CTRL is "H” after ACP_UVLO is “H”
SET (VBUS) Default
PP_BOTH_THRU
PATH_THRU_EN
VCC UVLO disable when through operation
Finished path through mode
Set path through mode
VBUS_OVP
Finish detection and dcdc start.
DCDC stop and VBUS power
path turn off.
VCC power path turn off and discharge
Both port set discharge signal during
20ms after path through mode finish.
VCC_OVP
VIN_ORD have to fix input port side
VIN_ORD
VCC UVLO disable during discharge
Exit path through mode until release OVP
Resister reset when detect OVP
Both port is discharged
during 20ms
Red Italic；Power
Blue Italic : Analog Signal
Black ； Internal Digital Signal
Green ； Resister settings
Role swap from VBUS to VCC when path through mode
BC1.2 Detecting/Waiting
VBUS
VBUS_UVLO_A
DCDC_STB
DCDC_CTRL
VBUS_PPCTRL
VCC_PPCTRL
VCC
VCC_UVLO_A
(VBUS UCD)
(VCC UCD)
DCDC_STB
VBUS UVLO release
Start BC1.2 detection or Timer 100ms
VCC_PP=OFF
VBUS_PP=ON
Finish detection and dcdc start.
VCC UVLO release VCC UVLO
ILIM Default
Detected/Waited
Default
Default
DCDC Stand-by
Default
VBUS_UVLO_D
VCC_UVLO_D
VBUS_LOAD
VCC_LOAD
ACP
ACP_UVLO
DCDC_CTRL is "H” after ACP_UVLO is “H”
SET (VBUS) Default
PP_BOTH_THRU
PATH_THRU_EN
VCC UVLO disable when through
operation
Finished path
through mode
Set path
through mode
VIN_ORD have to fix input port side
VIN_ORD
Occur role swap
VIN_ORD need change when input
and output change.
DCDC stop due to
VBUS plugged-out.
Power path become through condition
due to PP_BOTH_THRU signal.
Default
DCDC start up after ACPUVLO
release and 100msec min.
SET (VCC)
Input Current limit set default value of VCC
VCC UVLO disable when through operation VCC UVLO disable during discharge
Plugged-out VCC
BC1.2 Detecting/Waiting
Default
VIN_ORD fixed Input port side when path through use after input
voltage under UVLO
Set path through mode
Path through mode turn off when role swapping.
Both port is discharged
during 20ms
Red Italic；Power
Blue Italic : Analog Signal
Black ； Internal Digital Signal
Green ； Resister settings
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
46/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.12. CHGOP_SET1
Charger Operation Control Setting 1
Command Code:
0Bh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
DCP_2500_SEL
Select current limitation when DCP charger attached.
14
SDP_500_SEL
Select current limitation when SDP charger attached.
13
ILIM_AUTO_DISEN
Disable automatic limitation of the input current.
“1”: Disable / “0”: Enable.
12
reserved
11
VCC_BC_DISEN
Disable charging trigger by BC1.2 detection.
If this bit is "1: disable", after 100ms when VBUS/VCC plugged in,
BD99954 starts charging without BC1.2 detection.
“1”: Disable / “0”: Enable.
10
VBUS_BC_DISEN
Disable charging trigger by BC1.2 detection.
If this bit is "1: disable", after 100ms when VBUS/VCC plugged in,
BD99954 starts charging without BC1.2 detection.
“1”: Disable / “0”: Enable.
9
SDP_CHG_TRIG_EN
Enable the charging trigger after SDP charger attached.
“1”: Enable SDP_CHG_TRIG bit as charging trigger / “0”: Disable
SDP_CHG_TRIG bit as charging trigger.
8
SDP_CHG_TRIG
Charging trigger after SDP charger attached.
“1”: Start charging / “0”: Not start charging.
7
reserved
6
AUTO_TOF
Top-off transition mode.
This bit is trigger to move to the top-off charge state.
This bit is only effective when the charging state transitions from fast-
charge to top-off charge.
“1”: Auto control / “0”: Manual control.
5
AUTO_FST
Fast charging transition mode.
This bit is only effective when the charging state transitions from pre-
charge to fast-charge.
“1”: Auto control / “0”: Manual control.
4
reserved
3
AUTO_RECH
Automatic re-charging mode.
“1”: Auto control / “0”: Manual control.
2
reserved
1
reserved
0
reserved
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
47/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.13. CHGOP_SET2
Charger Operation Control Setting 2
Command Code:
0Ch
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
ILIM_RESET_EN
Enabling the input current limit re-setting when starting fast charge.
“1”: Enable. / “0”: Disable.
13
DCDC_1MS_SEL[1]
Select ILIM re-setting step period.
12
DCDC_1MS_SEL[0]
00b: 10us/ 01b: 50us/ 10b: 100us/ 11b: 1ms
11
reserved
10
SEL_ILIM_DIV
Select ILIM drop width when Anti-collapse. or VBAT<VIN comparator
asserted.
“1”: The input current limit drop into 1/4. / “0”: 1/2.
9
reserved
8
BATT_LEARN
Enabling Battery Learning operation, suspend charging and DC/DC
convertor.
This bit is cleared automatically when VBAT is the dead battery, VBAT <
VSYSREG_SET.
“1”: Enable / “0”: Disable.
7
CHG_EN
Enabling Charger operation.
“1”: Enable / “0”: Disable.
6
USB_SUS
Suspend USB charging and DC/DC convertor.
“1”: Suspend / “0”: Active.
5
CHOP_SS_INIT
Initialization value for CHOP_SS (Chopper Mode during DCDC soft start.)
"1": Chopper Mode during DCDC soft start / "0": Synchronized Mode.
This register is "Read-Only" and is loaded from OTP.
4
CHOP_ALL_INIT
Initialization value for CHOP_ALL (Continuous Chopper Mode.)
"1": Always in Chopper Mode / "0": Synchronized Mode.
This register is "Read-Only" and is loaded from OTP.
3
DCDC_CLK_SEL[1]
DCDC Clock Select.
2
DCDC_CLK_SEL[0]
00b: 600kHz (H:L=1:1)/ 01b: 857kHz (H:L=3:4)/
10b: 1000kHz (H:L=1:2)/ 11b: 1200kHz (H:L=2:3)
1
CHOP_SS
Enable operation in Chopper Mode during DCDC soft start.
"1": Chopper Mode during DCDC soft start / "0": Synchronized Mode.
Initial value is loaded from CHOP_SS_INIT during DCDC standby.
0
CHOP_ALL
Force continuous Chopper Mode operation.
"1": Continuous Chopper Mode / "0" Synchronized Mode.
Initial value is loaded from CHOP_ALL_INIT during DCDC standby.
8.5.14. VBUSCLPS_TH_SET
VBUS Collapse Detect Threshold Voltage Setting
Command Code:
0Dh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VBUSCLPS_TH_SET[14]
VBUS Anti-collapse entry voltage threshold.
13
VBUSCLPS_TH_SET[13]
3,840 to 32,640mV, 128mV steps.
12
VBUSCLPS_TH_SET[12]
The register range : 0 to 32,640mV.
11
VBUSCLPS_TH_SET[11]
But the actual range : 3,840 to 25,088mV.
10
VBUSCLPS_TH_SET[10]
“00h”setting disables VBUS collapse detection.
9
VBUSCLPS_TH_SET[9]
8
VBUSCLPS_TH_SET[8]
7
VBUSCLPS_TH_SET[7]
6
reserved
5
reserved
4
reserved
3
reserved
2
reserved
1
reserved
0
reserved
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
48/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.15. VCCCLPS_TH_SET
VCC Collapse Detect Threshold Voltage Setting
Command Code:
0Eh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VCCCLPS_TH_SET[14]
VCC Anti-collapse entry voltage threshold
13
VCCCLPS_TH_SET[13]
3,840 to 32,640mV, 128mV steps.
12
VCCCLPS_TH_SET[12]
The register range : 0 to 32,640mV.
11
VCCCLPS_TH_SET[11]
But the actual range : 3,840 to 25,088mV.
10
VCCCLPS_TH_SET[10]
“00h”setting disables VCC collapse detection.
9
VCCCLPS_TH_SET[9]
8
VCCCLPS_TH_SET[8]
7
VCCCLPS_TH_SET[7]
6
reserved
5
reserved
4
reserved
3
reserved
2
reserved
1
reserved
0
reserved
8.5.16. CHGWDT_SET
Charger WDT Setting
Command Code:
0Fh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
WDT_FST[7]
Watch Dog Timer setting for Fast Charging.
14
WDT_FST[6]
4 to 1020 minutes range, 4-minute steps.
13
WDT_FST[5]
“00h”setting stops this timer.
12
WDT_FST[4]
11
WDT_FST[3]
10
WDT_FST[2]
9
WDT_FST[1]
8
WDT_FST[0]
7
WDT_PRE[7]
Watch Dog Timer setting for Pre-charging.
6
WDT_PRE[6]
1 to 255 minutes range, 1-minute steps.
5
WDT_PRE[5]
“00h”setting stops this timer.
4
WDT_PRE[4]
3
WDT_PRE[3]
2
WDT_PRE[2]
1
WDT_PRE[1]
0
WDT_PRE[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
49/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.17. BATTWDT_SET
Battery Temperature and Battery short current WDT Setting
Command Code:
10h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
WDT_IBAT_SHORT[7]
Watch Dog Timer setting for Battery Short Current.
4 to 1020 ms range, 4ms steps.
“00h”setting stops this timer.
14
WDT_IBAT_SHORT[6]
13
WDT_IBAT_SHORT[5]
12
WDT_IBAT_SHORT[4]
11
WDT_IBAT_SHORT[3]
10
WDT_IBAT_SHORT[2]
9
WDT_IBAT_SHORT[1]
8
WDT_IBAT_SHORT[0]
7
WDT_THERM[7]
Watch Dog Timer setting for Battery Temperature.
6
WDT_THERM[6]
1 to 255 minutes range, 1-minute steps.
5
WDT_THERM[5]
“00h”setting stops this timer.
4
WDT_THERM[4]
3
WDT_THERM[3]
2
WDT_THERM[2]
1
WDT_THERM[1]
0
WDT_THERM[0]
8.5.18. VSYSREG_SET
VSYS Regulation Setting
Command Code:
11h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VSYSREG_SET[14]
VSYS regulation voltage setting and
13
VSYSREG_SET[13]
threshold voltage from Pre-charging to Fast-charging.
12
VSYSREG_SET[12]
2,560 to 19,200mV, 64mV steps.
11
VSYSREG_SET[11]
The register range : 0 to 32,704mV.
10
VSYSREG_SET[10]
But the actual range : 2,560 to 19,200mV.
9
VSYSREG_SET[9]
8
VSYSREG_SET[8]
7
VSYSREG_SET[7]
6
VSYSREG_SET[6]
5
reserved
4
reserved
3
reserved
2
reserved
1
reserved
0
reserved
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
50/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.19. VSYSVAL_THH_SET
VSYS Valid Threshold High Setting (Hysteresis)
Command Code:
12h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VSYSVAL_THH_SET[14]
VSYS voltage rising detection threshold with hysteresis.
13
VSYSVAL_THH_SET[13]
2,560 to 19,200mV, 64mV steps.
12
VSYSVAL_THH_SET[12]
The register range : 0 to 32,704mV.
11
VSYSVAL_THH_SET[11]
But the actual range : 2,560 to 19,200mV.
10
VSYSVAL_THH_SET[10]
9
VSYSVAL_THH_SET[9]
8
VSYSVAL_THH_SET[8]
7
VSYSVAL_THH_SET[7]
6
VSYSVAL_THH_SET[6]
5
reserved
4
reserved
3
reserved
2
reserved
1
reserved
0
reserved
8.5.20. VSYSVAL_THL_SET
VSYS Valid Threshold Low Setting (Hysteresis)
Command Code:
13h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VSYSVAL_THL_SET[14]
VSYS voltage falling detection threshold with hysteresis.
13
VSYSVAL_THL_SET[13]
2,560 to 19,200mV, 64mV steps.
12
VSYSVAL_THL_SET[12]
The register range : 0 to 32,704mV.
11
VSYSVAL_THL_SET[11]
But the actual range : 2,560 to 19,200mV.
10
VSYSVAL_THL_SET[10]
9
VSYSVAL_THL_SET[9]
8
VSYSVAL_THL_SET[8]
7
VSYSVAL_THL_SET[7]
6
VSYSVAL_THL_SET[6]
5
reserved
4
reserved
3
reserved
2
reserved
1
reserved
0
reserved
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
51/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.21. ITRICH_SET
Trickle-charge Current Setting
Command Code:
14h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
ITRICH_SET[10]
Trickle-charging current setting.
0 to 1,024mA, 64mA steps.
9
ITRICH_SET[9]
8
ITRICH_SET[8]
The register range : 0 to 1,984mA.
7
ITRICH_SET[7]
But the actual range : 0 to 1,024mA.
6
ITRICH_SET[6]
5
reserved
4
reserved
3
reserved
2
reserved
1
reserved
0
reserved
8.5.22. IPRECH_SET
Pre-charge Current Setting
Command Code:
15h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
IPRECH_SET[10]
Pre-charging current setting.
0 to 1,024mA, 64mA steps.
9
IPRECH_SET[9]
8
IPRECH_SET[8]
The register range : 0 to 1,984mA.
7
IPRECH_SET[7]
But the actual range : 0 to 1,024mA.
6
IPRECH_SET[6]
5
reserved
4
reserved
3
reserved
2
reserved
1
reserved
0
reserved
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
52/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.23. ICHG_SET
Fast-charge Current Setting
Command Code:
16h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
ICHG_SET[13]
Fast-charging current setting.
0 to 16,320mA, 64mA steps.
12
ICHG_SET[12]
11
ICHG_SET[11]
10
ICHG_SET[10]
9
ICHG_SET[9]
8
ICHG_SET[8]
7
ICHG_SET[7]
6
ICHG_SET[6]
5
reserved
4
reserved
3
reserved
2
reserved
1
reserved
0
reserved
8.5.24. ITERM_SET
Charge Termination Current Setting
Command Code:
17h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
ITERM_SET[10]
Charging Termination Current.
0 to 1,024mA, 64mA steps.
9
ITERM_SET[9]
8
ITERM_SET[8]
The register range : 0 to 1,984mA.
7
ITERM_SET[7]
But the actual range : 0 to 1,024mA.
6
ITERM_SET[6]
5
reserved
4
reserved
3
reserved
2
reserved
1
reserved
0
reserved
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
53/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.25. VPRECHG_TH_SET
Pre-charge Voltage Threshold Setting
Command Code:
18h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VPRECHG_TH_SET[14]
Threshold voltage from Trickle-charging to Pre-charging
2,048 to 19,200mV, 64mV steps.
13
VPRECHG_TH_SET[13]
12
VPRECHG_TH_SET[12]
The register range : 0 to 32,704mV.
11
VPRECHG_TH_SET[11]
But the actual range : 2,048 to 19,200mV.
10
VPRECHG_TH_SET[10]
9
VPRECHG_TH_SET[9]
8
VPRECHG_TH_SET[8]
7
VPRECHG_TH_SET[7]
6
VPRECHG_TH_SET[6]
5
reserved
4
reserved
3
reserved
2
reserved
1
reserved
0
reserved
8.5.26. VRBOOST_SET
Reverse buck boost voltage Setting
Command Code:
19h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VRBOOST_SET[14]
Reverse buck boost voltage setting.
13
VRBOOST_SET[13]
12
VRBOOST_SET[12]
4,032 to 22,016mV, 64mV steps.
11
VRBOOST_SET[11]
The register range : 0 to 32,704mV.
10
VRBOOST_SET[10]
But the actual range : 4,032 to 22,016mV.
9
VRBOOST_SET[9]
8
VRBOOST_SET[8]
7
VRBOOST_SET[7]
6
VRBOOST_SET[6]
5
reserved
4
reserved
3
reserved
2
reserved
1
reserved
0
reserved
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
54/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.27. VFASTCHG_REG_SET1
Fast Charge Voltage Regulation Setting 1
Command Code:
1Ah
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VFASTCHG_REG_SET1[14]
Fast Charging Regulation Voltage.
2,560 to 19,200mV, 16mV steps.
13
VFASTCHG_REG_SET1[13]
12
VFASTCHG_REG_SET1[12]
The register range : 0 to 32,752mV.
11
VFASTCHG_REG_SET1[11]
But the actual range : 2,560 to 19,200mV.
10
VFASTCHG_REG_SET1[10]
9
VFASTCHG_REG_SET1[9]
8
VFASTCHG_REG_SET1[8]
7
VFASTCHG_REG_SET1[7]
6
VFASTCHG_REG_SET1[6]
5
VFASTCHG_REG_SET1[5]
4
VFASTCHG_REG_SET1[4]
3
reserved
2
reserved
1
reserved
0
reserved
8.5.28. VFASTCHG_REG_SET2
Fast Charge Voltage Regulation Setting 2 (Hot 1)
Command Code:
1Bh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VFASTCHG_REG_SET2[14]
Fast Charging Regulation Voltage for the JEITA temperature range T3-T5.
13
VFASTCHG_REG_SET2[13]
2,560 to 19,200mV, 16mV steps.
12
VFASTCHG_REG_SET2[12]
The register range : 0 to 32,752mV.
11
VFASTCHG_REG_SET2[11]
But the actual range : 2,560 to 19,200mV.
10
VFASTCHG_REG_SET2[10]
9
VFASTCHG_REG_SET2[9]
8
VFASTCHG_REG_SET2[8]
7
VFASTCHG_REG_SET2[7]
6
VFASTCHG_REG_SET2[6]
5
VFASTCHG_REG_SET2[5]
4
VFASTCHG_REG_SET2[4]
3
reserved
2
reserved
1
reserved
0
reserved
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
55/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.29. VFASTCHG_REG_SET3
Fast Charge Voltage Regulation Setting 3 (Hot 2)
Command Code:
1Ch
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VFASTCHG_REG_SET3[14]
Fast Charging Regulation Voltage for the JEITA temperature
range T5-T4 and T1-T2.
2,560 to 19,200mV, 16mV steps.
13
VFASTCHG_REG_SET3[13]
12
VFASTCHG_REG_SET3[12]
The register range : 0 to 32,752mV.
11
VFASTCHG_REG_SET3[11]
But the actual range : 2,560 to 19,200mV.
10
VFASTCHG_REG_SET3[10]
9
VFASTCHG_REG_SET3[9]
8
VFASTCHG_REG_SET3[8]
7
VFASTCHG_REG_SET3[7]
6
VFASTCHG_REG_SET3[6]
5
VFASTCHG_REG_SET3[5]
4
VFASTCHG_REG_SET3[4]
3
reserved
2
reserved
1
reserved
0
reserved
8.5.30. VRECHG_SET
Re-charge Battery Voltage Setting
Command Code:
1Dh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VRECHG_SET[14]
Re-charge Battery Voltage.
2,560 to 19,200mV, 16mV steps.
13
VRECHG_SET[13]
12
VRECHG_SET[12]
The register range : 0 to 32,752mV.
11
VRECHG_SET[11]
But the actual range : 2,560 to 19,200mV.
10
VRECHG_SET[10]
9
VRECHG_SET[9]
8
VRECHG_SET[8]
7
VRECHG_SET[7]
6
VRECHG_SET[6]
5
VRECHG_SET[5]
4
VRECHG_SET[4]
3
reserved
2
reserved
1
reserved
0
reserved
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
56/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.31. VBATOVP_SET
Battery Over Voltage Protection Setting
Command Code:
1Eh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VBATOVP_SET[14]
Battery over-voltage detection threshold.
2,560 to 19,200mV, 16mV steps.
13
VBATOVP_SET[13]
12
VBATOVP_SET[12]
The register range : 0 to 32,752mV.
11
VBATOVP_SET[11]
But the actual range : 2,560 to 19,200mV.
10
VBATOVP_SET[10]
9
VBATOVP_SET[9]
8
VBATOVP_SET[8]
7
VBATOVP_SET[7]
6
VBATOVP_SET[6]
5
VBATOVP_SET[5]
4
VBATOVP_SET[4]
3
reserved
2
reserved
1
reserved
0
reserved
8.5.32. IBATSHORT_SET
Battery Short Current Protection Setting
Command Code:
1Fh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
IBATM_SHORT_SET[14]
Battery Short Current Protection Threshold
13
IBATM_SHORT_SET[13]
0 to 25,000mA, 1mA steps.
12
IBATM_SHORT_SET[12]
The register range : 0 to 32,752mA.
11
IBATM_SHORT_SET[11]
But the actual range : 0 to 25,000mA.
10
IBATM_SHORT_SET[10]
9
IBATM_SHORT_SET[9]
8
IBATM_SHORT_SET[8]
7
IBATM_SHORT_SET[7]
6
IBATM_SHORT_SET[6]
5
IBATM_SHORT_SET[5]
4
IBATM_SHORT_SET[4]
3
IBATM_SHORT_SET[3]
2
IBATM_SHORT_SET[2]
1
IBATM_SHORT_SET[1]
0
IBATM_SHORT_SET[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
57/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.33. PROCHOT_CTRL_SET
PROCHOT# pin Control Setting
Command Code:
20h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
PROCHOT_DG_SET[1]
PROCHOT# de-glitch period (VSYS, INORM) setting.
14
PROCHOT_DG_SET[0]
00b: 200us/ 01b: 500us/ 10b:1ms/ 11b:50ms
13
reserved
12
reserved
11
PROCHOT_ICRIT_DG_SET[1]
PROCHOT# de-glitch period (ICRIT) setting.
10
PROCHOT_ICRIT_DG_SET[0]
00b: 100us/ 01b: 200us/ 10b: 500us/ 11b:1ms
9
PROCHOT_IDCHG_DG_SET[1]
PROCHOT# de-glitch period (IDCHG) setting.
8
PROCHOT_IDCHG_DG_SET[0]
00b: 200us/ 01b: 500us/ 10b:1ms/ 11b:5ms
7
reserved
6
reserved
5
reserved
4
PROCHOT_EN[4]
PROCHOT# 2nd level enable (VSYS)
3
PROCHOT_EN[3]
PROCHOT# 2nd level enable (IDCHG)
2
PROCHOT_EN[2]
PROCHOT# 2nd level enable (INORM)
1
PROCHOT_EN[1]
PROCHOT# 2nd level enable (ICRIT)
0
PROCHOT_EN[0]
PROCHOT# 1st level enable
IACP_VAL,
Input Current Measurement Value +
-
IACP_AVE_VAL,
Input Current Measurement
Average Value
+
-
IBATM_AVE_VAL,
Battery Dis-charge Current
Measurement Average Value
+
-
VSYS_AVE_VAL,
VSYS Voltage Measurement
Average Value
+
-
PROCHOT_ICRIT_SET,
Peak Input Current Threshold
PROCHOT_INORM_SET,
Average Input Current Threshold
PROCHOT_IDCHG_SET,
Dis-charge Current Threshold
PROCHOT_VSYS_SET,
VSYS Voltage Threshold
PROCHOT_IDCHG_DG_SET[1:0]
De-glitch period setting for IDGHG
200us/500us/1ms/5ms
PROCHOT_DG_SET[1:0]
De-glitch period setting for VSYS and INORM
200us/500us/1ms/50ms
PROCHOT_DG_SET[1:0]
De-glitch period setting for VSYS and INORM
200us/500us/1ms/50ms
PROCHOT_ICRIT_DG_SET[1:0]
De-glitch period setting for ICRIT
100us/200us/500us/1ms
PROCHOT#
10ms Debounce
(>=10ms width)
EN
PROCHOT_EN[4]&
PROCHOT_EN[0]
EN
PROCHOT_EN[3]&
PROCHOT_EN[0]
EN
PROCHOT_EN[2]&
PROCHOT_EN[0]
EN
PROCHOT_EN[1]&
PROCHOT_EN[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
58/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.34. PROCHOT_ICRIT_SET
Peak Input Current Threshold Setting for PROCHOT#
Command Code:
21h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
PROCHOT_ICRIT_SET[14]
Peak Input Current Threshold for PROCHOT#
13
PROCHOT_ICRIT_SET[13]
0 to 16,384mA, 1mA steps.
12
PROCHOT_ICRIT_SET[12]
The register range : 0 to 32,752mA.
11
PROCHOT_ICRIT_SET[11]
But the actual range : 0 to 16,383mA.
10
PROCHOT_ICRIT_SET[10]
9
PROCHOT_ICRIT_SET[9]
8
PROCHOT_ICRIT_SET[8]
7
PROCHOT_ICRIT_SET[7]
6
PROCHOT_ICRIT_SET[6]
5
PROCHOT_ICRIT_SET[5]
4
PROCHOT_ICRIT_SET[4]
3
PROCHOT_ICRIT_SET[3]
2
PROCHOT_ICRIT_SET[2]
1
PROCHOT_ICRIT_SET[1]
0
PROCHOT_ICRIT_SET[0]
8.5.35. PROCHOT_INORM_SET
Average Input Current Threshold Setting for PROCHOT#
Command Code:
22h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
PROCHOT_INORM_SET[14]
Average Input Current Threshold for PROCHOT#
13
PROCHOT_INORM_SET[13]
0 to 16,384mA, 1mA steps.
12
PROCHOT_INORM_SET[12]
The register range : 0 to 32,752mA.
11
PROCHOT_INORM_SET[11]
But the actual range : 0 to 16,383mA.
10
PROCHOT_INORM_SET[10]
9
PROCHOT_INORM_SET[9]
8
PROCHOT_INORM_SET[8]
7
PROCHOT_INORM_SET[7]
6
PROCHOT_INORM_SET[6]
5
PROCHOT_INORM_SET[5]
4
PROCHOT_INORM_SET[4]
3
PROCHOT_INORM_SET[3]
2
PROCHOT_INORM_SET[2]
1
PROCHOT_INORM_SET[1]
0
PROCHOT_INORM_SET[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
59/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.36. PROCHOT_IDCHG_SET
Dis-charge Current Threshold Setting for PROCHOT#
Command Code:
23h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
PROCHOT_IDCHG_SET[13]
Dis-charge Current Threshold for PROCHOT#
13
PROCHOT_IDCHG_SET[14]
0 to 25,000mA, 1mA steps.
12
PROCHOT_IDCHG_SET[12]
The register range: 0 to 32,752mA.
11
PROCHOT_IDCHG_SET[11]
But the actual range: 0 to 25,000mA.
10
PROCHOT_IDCHG_SET[10]
9
PROCHOT_IDCHG_SET[9]
8
PROCHOT_IDCHG_SET[8]
7
PROCHOT_IDCHG_SET[7]
6
PROCHOT_IDCHG_SET[6]
5
PROCHOT_IDCHG_SET[5]
4
PROCHOT_IDCHG_SET[4]
3
PROCHOT_IDCHG_SET[3]
2
PROCHOT_IDCHG_SET[2]
1
PROCHOT_IDCHG_SET[1]
0
PROCHOT_IDCHG_SET[0]
8.5.37. PROCHOT_VSYS_SET
VSYS Voltage Threshold Setting for PROCHOT#
Command Code:
24h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
PROCHOT_VSYS_SET[14]
VSYS Voltage Threshold for PROCHOT#
13
PROCHOT_VSYS_SET[13]
0 to 19,200mV, 1mV steps.
12
PROCHOT_VSYS_SET[12]
The register range : 0 to 32,752mV.
11
PROCHOT_VSYS_SET[11]
But the actual range : 0 to 19,200mV.
10
PROCHOT_VSYS_SET[10]
9
PROCHOT_VSYS_SET[9]
8
PROCHOT_VSYS_SET[8]
7
PROCHOT_VSYS_SET[7]
6
PROCHOT_VSYS_SET[6]
5
PROCHOT_VSYS_SET[5]
4
PROCHOT_VSYS_SET[4]
3
PROCHOT_VSYS_SET[3]
2
PROCHOT_VSYS_SET[2]
1
PROCHOT_VSYS_SET[1]
0
PROCHOT_VSYS_SET[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
60/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.38. PMON_IOUT_CTRL_SET
PMON and IOUT Output Control Setting
Command Code:
25h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
reserved
9
IMON_INSEL
IOUT Input source select.
0b: Measurement Average Value/ 1b: Measurement Value
8
PMON_INSEL
PMON Input source select.
0b: Measurement Average Value/ 1b: Measurement Value
7
IOUT_OUT_EN
IOUT enable.
“1”: Enable / “0”: Disable.
6
IOUT_SOURCE_SEL
IOUT source select.
“1”: Input Current / “0”: Battery Dis-charge Current.
5
IOUT_GAIN_SET[1]
IOUT gain select.
4
IOUT_GAIN_SET[0]
00b: 5V/V / 01b: 10V/V / 10b: 20V/V/ 11b: 40V/V
3
PMON_OUT_EN
PMON Enable.
“1”: Enable / “0”: Disable.
2
PMON_GAIN_SET[2]
PMON gain select.
1
PMON_GAIN_SET[1]
0h: x1/ 1h: x2/ 2h: x4/ 3h: x8/ 4h: x16/ 5h: x32/ 6h: x64
0
PMON_GAIN_SET[0]
8.5.39. PMON_DACIN_VAL
PMON DAC Input Value (for debug and production test)
Command Code:
26h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
reserved
9
PMON_DACIN_VAL[9]
PMON DAC Input Value
8
PMON_DACIN_VAL[8]
(for debug and production test)
7
PMON_DACIN_VAL[7]
6
PMON_DACIN_VAL[6]
5
PMON_DACIN_VAL[5]
4
PMON_DACIN_VAL[4]
3
PMON_DACIN_VAL[3]
2
PMON_DACIN_VAL[2]
1
PMON_DACIN_VAL[1]
0
PMON_DACIN_VAL[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
61/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.40. IOUT_DACIN_VAL
IOUT DAC Input Value (for debug and production test)
Command Code:
27h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
IOUT_DACIN_VAL[11]
IOUT DAC Input Value
10
IOUT_DACIN_VAL[10]
(for debug and production test)
9
IOUT_DACIN_VAL[9]
8
IOUT_DACIN_VAL[8]
7
IOUT_DACIN_VAL[7]
6
IOUT_DACIN_VAL[6]
5
IOUT_DACIN_VAL[5]
4
IOUT_DACIN_VAL[4]
3
IOUT_DACIN_VAL[3]
2
IOUT_DACIN_VAL[2]
1
IOUT_DACIN_VAL[1]
0
IOUT_DACIN_VAL[0]
8.5.41. VCC_UCD_SET
BC1.2 Charger Detector on the VCC side Setting
Command Code:
28h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
BCSRETRY
Trigger for re-trial of the USB Charger Port detection.
“1”: Start detection / “0”: Release the operation.
11
reserved
10
reserved
9
reserved
8
ADCRTRY
Trigger for re-trial of USB ID Resistor detection.
“1”: Start detection / “0”: Release the operation.
7
USBDETEN
Enabling USB Charger port detection.
“1”: Enable / “0”: Disable.
6
IDRDETEN
Enabling USB ID Resistor detection.
“1”: Enable / “0”: Disable.
5
ENUMRDY
Setting USB Enumeration to Ready.
“1”: Skip Secondary Detection / “0”: Normal operation.
4
ADCPOLEN
USB ID input polling enable.
“1”: Enable (always detection) / “0”: Disable.
3
DCDMODE
DCD timeout period setting.
“1”: 1280 ms / “0”: 640 ms.
2
reserved
1
USB_SW_EN
Enabling automatic USB-Switch control.
“1”: Enable (auto) / “0”: Disable (manual).
0
USB_SW
USB Switch manual control.
“1”: Switch ON / “0”: Switch OFF.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
62/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.42. VCC_UCD_STATUS
BC1.2 Charger Detect Status on the VCC side
Command Code:
29h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
DCDFAIL
DCD (USB Data Contact Detection) failed (timeout) status.
“1”: Failed / “0”: Succeeded.
14
reserved
13
CHGPORT[1]
USB Charger Port Detection result.
12
CHGPORT[0]
00b: No charger port/ 01b: SDP/ 10b: CDP/ 11b: DCP
11
PUPDET
Pull-up detected at Primary Detection after DCDFAIL.
“1”: Detected / “0”: Not detected.
10
reserved
9
reserved
8
reserved
7
VBUS_VLD
USB VBUS valid voltage detection status.
“1”: Valid / “0”: Not valid.
6
CHGDET
USB Charger Port detection status.
“1”: Detected / “0”: Not detected.
5
reserved
4
reserved
3
OTGDET
USB OTG Device detection status.
“1”: Detected / “0”: Not detected.
2
reserved
1
reserved
0
reserved
CHGDET
PUPDET
DCDFAIL
CHGPORT[1]
CHGPORT[0]
VBUS Open
0
0
0
0
0
SDP
0
0
0
0
1
CDP
1
0
0
1
0
DCP
1
0
0
1
1
Pull-up Port
0
1
1
0
1
Open Port
0
0
1
0
1
Unstable Port
0
0
1
0
1
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
63/127
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Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.43. VCC_IDD_STATUS
ID Detect Status on the VCC side
Command Code:
2Ah
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
reserved
9
reserved
8
reserved
7
reserved
6
VBINOP
VBUS voltage status while ID detection.
“1”: Normal voltage / “0”: Abnormal voltage.
5
EXTID
Check MHL ID (1k Ohm) detection support.
“1”: Supported / “0”: Not supported.
4
IDRDET
USB ID Resistor contact detection status.
“1”: Detected (contacted) / “0”: Not detected (removed).
3
INDO[3]
USB ID detection result.
2
INDO[2]
1
INDO[1]
0
INDO[0]
INDO
ID Resistance
Detected Port/Device
0h
0 - 10Ω
RID_GND (OTG)
1h
36.5kΩ
RID_C (ACA_C, SDP)
2h
47kΩ
-
3h
68kΩ
RID_B (ACA_B, DCP)
4h
102kΩ
-
5h
124kΩ
RID_A (ACA_A, CDP)
6h
180kΩ
-
7h
200kΩ
RID_FLOAT
8h
287kΩ
-
9h
390kΩ
-
Ah
440kΩ
-
Bh
557kΩ
-
Ch
797kΩ
-
Dh
>1MΩ
-
Eh
1KΩ
(MHL)
Fh
Illegal ID
Unknown
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
64/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.44. VCC_UCD_FCTRL_SET
BC1.2 Charger Detector on the VCC side Manual Control Setting
Command Code:
2Bh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
UCDSWEN
In normal operation, please don’t set these registers.
9
RREF_EN
8
DPPU_EN
7
DPREF_EN
6
DMREF_EN
5
DPDET_EN
4
DMDET_EN
3
DPSINK_EN
2
DMSINK_EN
1
DP_BUFF_EN
0
DM_BUFF_EN
8.5.45. VCC_UCD_FCTRL_EN
BC1.2 Charger Detector on the VCC side Manual Control Enable
Command Code:
2Ch
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
EXTCLKENBL
In normal operation, please don’t set these registers.
14
PLSTESTEN
13
reserved
12
reserved
11
reserved
10
UCDSWEN_TSTENB
In normal operation, please don’t set these registers.
9
RREF_EN_TSTENB
8
DPPU_EN_TSTENB
7
DPREF_EN_TSTENB
6
DMREF_EN_TSTENB
5
DPDET_EN_TSTENB
4
DMDET_EN_TSTENB
3
DPSINK_EN_TSTENB
2
DMSINK_EN_TSTENB
1
DP_BUFF_EN_TSTENB
0
DM_BUFF_EN_TSTENB
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
65/127
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Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.46. VBUS_UCD_SET
BC1.2 Charger Detector on the VBUS side Setting
Command Code:
30h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
BCSRETRY
Trigger for re-trial of the USB Charger Port detection.
“1”: Start detection / “0”: Release the operation.
11
reserved
10
reserved
9
reserved
8
ADCRTRY
Trigger for re-trial of USB ID Resistor detection.
“1”: Start detection / “0”: Release the operation.
7
USBDETEN
Enabling USB Charger port detection.
“1”: Enable / “0”: Disable.
6
IDRDETEN
Enabling USB ID Resistor detection.
“1”: Enable / “0”: Disable.
5
ENUMRDY
Setting USB Enumeration to Ready.
“1”: Skip Secondary Detection / “0”: Normal operation.
4
ADCPOLEN
USB ID input polling enable.
“1”: Enable (always detection) / “0”: Disable.
3
DCDMODE
DCD timeout period setting.
“1”: 1280 ms / “0”: 640 ms.
2
reserved
1
USB_SW_EN
Enabling automatic USB-Switch control.
“1”: Enable (auto) / “0”: Disable (manual).
0
USB_SW
USB Switch manual control.
“1”: Switch ON / “0”: Switch OFF.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
66/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.47. VBUS_UCD_STATUS
BC1.2 Charger Detect Status on the VBUS side
Command Code:
31h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
DCDFAIL
DCD (USB Data Contact Detection) failed (timeout) status.
“1”: Failed / “0”: Succeeded.
14
reserved
13
CHGPORT[1]
USB Charger Port Detection result.
12
CHGPORT[0]
00b: No charger port/ 01b: SDP/ 10b: CDP/ 11b: DCP
11
PUPDET
Pull-up detected at Primary Detection after DCDFAIL.
“1”: Detected / “0”: Not detected.
10
reserved
9
reserved
8
reserved
7
VBUS_VLD
USB VBUS valid voltage detection status.
“1”: Valid / “0”: Not valid.
6
CHGDET
USB Charger Port detection status.
“1”: Detected / “0”: Not detected.
5
reserved
4
reserved
3
OTGDET
USB OTG Device detection status.
“1”: Detected / “0”: Not detected.
2
reserved
1
reserved
0
reserved
CHGDET
PUPDET
DCDFAIL
CHGPORT[1]
CHGPORT[0]
VBUS Open
0
0
0
0
0
SDP
0
0
0
0
1
CDP
1
0
0
1
0
DCP
1
0
0
1
1
Pull-up Port
0
1
1
0
1
Open Port
0
0
1
0
1
Unstable Port
0
0
1
0
1
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
67/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.48. VBUS_IDD_STATUS
ID Detect Status on the VBUS side
Command Code:
32h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
reserved
9
reserved
8
reserved
7
reserved
6
VBINOP
VBUS voltage status while ID detection.
“1”: Normal voltage / “0”: Abnormal voltage.
5
EXTID
Check MHL ID (1k Ohm) detection support.
“1”: Supported / “0”: Not supported.
4
IDRDET
USB ID Resistor contact detection status.
“1”: Detected (contacted) / “0”: Not detected (removed).
3
INDO[3]
USB ID detection result.
2
INDO[2]
1
INDO[1]
0
INDO[0]
INDO
ID Resistance
Detected Port/Device
0h
0 - 10Ω
RID_GND (OTG)
1h
36.5kΩ
RID_C (ACA_C, SDP)
2h
47kΩ
-
3h
68kΩ
RID_B (ACA_B, DCP)
4h
102kΩ
-
5h
124kΩ
RID_A (ACA_A, CDP)
6h
180kΩ
-
7h
200kΩ
RID_FLOAT
8h
287kΩ
-
9h
390kΩ
-
Ah
440kΩ
-
Bh
557kΩ
-
Ch
797kΩ
-
Dh
>1MΩ
-
Eh
1KΩ
(MHL)
Fh
Illegal ID
Unknown
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
68/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.49. VBUS_UCD_FCTRL_SET
BC1.2 Charger Detector on the VBUS side Manual Control Setting
Command Code:
33h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
UCDSWEN
In normal operation, please don’t set these registers.
9
RREF_EN
8
DPPU_EN
7
DPREF_EN
6
DMREF_EN
5
DPDET_EN
4
DMDET_EN
3
DPSINK_EN
2
DMSINK_EN
1
DP_BUFF_EN
0
DM_BUFF_EN
8.5.50. VBUS_UCD_FCTRL_EN
BC1.2 Charger Detector on the VBUS side Manual Control Enable
Command Code:
34h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
EXTCLKENBL
In normal operation, please don’t set these registers.
14
PLSTESTEN
13
reserved
12
reserved
11
reserved
10
UCDSWEN_TSTENB
In normal operation, please don’t set these registers.
9
RREF_EN_TSTENB
8
DPPU_EN_TSTENB
7
DPREF_EN_TSTENB
6
DMREF_EN_TSTENB
5
DPDET_EN_TSTENB
4
DMDET_EN_TSTENB
3
DPSINK_EN_TSTENB
2
DMSINK_EN_TSTENB
1
DP_BUFF_EN_TSTENB
0
DM_BUFF_EN_TSTENB
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
69/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.51. CHIP_ID
Chip ID
Command Code:
38h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
CHIP_ID[15]
Chip ID
14
CHIP_ID[14]
13
CHIP_ID[13]
12
CHIP_ID[12]
11
CHIP_ID[11]
10
CHIP_ID[10]
9
CHIP_ID[9]
8
CHIP_ID[8]
7
CHIP_ID[7]
6
CHIP_ID[6]
5
CHIP_ID[5]
4
CHIP_ID[4]
3
CHIP_ID[3]
2
CHIP_ID[2]
1
CHIP_ID[1]
0
CHIP_ID[0]
8.5.52. CHIP_REV
Chip Revision
Command Code:
39h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
CHIP_REV[15]
Chip Revision
14
CHIP_REV[14]
13
CHIP_REV[13]
12
CHIP_REV[12]
11
CHIP_REV[11]
10
CHIP_REV[10]
9
CHIP_REV[9]
8
CHIP_REV[8]
7
CHIP_REV[7]
6
CHIP_REV[6]
5
CHIP_REV[5]
4
CHIP_REV[4]
3
CHIP_REV[3]
2
CHIP_REV[2]
1
CHIP_REV[1]
0
CHIP_REV[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
70/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.53. IC_SET1
ACP discharge control and ACOK control setting.
Command Code:
3Ah
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
ONE_CELL_MODE
1 cell battery mode.
“1”: 1 cell battery mode/ “0”: 2~4 cells battery mode
“1”:VFASTCHG_REG_SET1, 2, 3 set less than 4.6V and
VSYSREG_SET set less than 5.0V
“0”:VSYSREG_SET set more than 5.0V
10
reserved
9
VACP_AUTO_DISCHG
VACP Auto Discharge control is enable when the Power path is changed.
“1”: VACP Auto discharge control is enabled./ “0”: Disabled.
8
VACP_LOAD
VACP Discharge control when the VACP power path is plugged off.
“1”: VACP load on and discharged./ “0”: VACP load off.
7
reserved
6
reserved
5
reserved
4
reserved
3
reserved
2
reserved
1
ACOK_POL
ACOK open drain output polarity control.
“1”: ACOK polarity is inverted, L=Asserted, Hi-z=Deasserted. / “0”: ACOK
polarity is normal, L=Deasserted, Hi-z=Asserted.
0
ACOK_DISEN
ACOK open drain output disable.
“1”: Disable, ACOK is Hi-z. / “0”: Enable.
8.5.54. IC_SET2
Debug Setting Register (for debug and production test)
Command Code:
3Bh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
reserved
9
reserved
8
DEBUG_SET[8]
Debug Setting (for debug and production test)
7
DEBUG_SET[7]
Debug Setting (for debug and production test)
6
DEBUG_SET[6]
Debug Setting (for debug and production test)
5
DEBUG_SET[5]
Debug Setting (for debug and production test)
4
DEBUG_SET[4]
Debug Setting (for debug and production test)
3
reserved
2
reserved
1
reserved
0
DEBUG_SET[0]
Debug Setting (for debug and production test)
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
71/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.55. SYSTEM_STATUS
System Power-on Status
Command Code:
3Ch
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
reserved
9
reserved
8
reserved
7
reserved
6
MONRST_STATE
Reset status for MONRST.
“1”: Reset asserted / “0”: Reset released.
5
ALMRST_STATE
Reset status for ALMRST.
“1”: Reset asserted / “0”: Reset released.
4
CHGRST_STATE
Reset status for CHGRST.
“1”: Reset asserted / “0”: Reset released.
3
reserved
2
reserved
1
OTPLD_STATE
OTPROM loading status.
“1” shows the OTPROM loading is finished./ “0”: not finished.
0
ALLRST_STATE
Reset status for ALLRST.
“1”: Reset asserted / “0”: Reset released.
8.5.56. SYSTEM_CTRL_SET
Software reset and reload OTP
Command Code:
3Dh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
reserved
9
reserved
8
reserved
7
reserved
6
MONRST
Writing “1” resets Voltage Meter block and the status registers. But the setting
registers are not initialized.
Writing “0” releases reset operation.
5
ALMRST
Writing “1” resets Interrupt block and the status registers. But the setting
registers are not initialized.
Writing “0” releases reset operation.
4
CHGRST
Writing “1” resets Battery Charger block and USB Detector block and the
status registers. But the setting registers are not initialized.
Writing “0” releases reset operation.
3
reserved
2
reserved
1
OTPLD
Writing “1” starts to load the OTPROM data into the internal registers.
OTPROM data is loaded automatically for power-on sequence. But if
necessary, user is able to reload the OTPROM data by writing this bit “1”.
0
ALLRST
Writing “1” resets Voltage Meter block, Interrupt block, Battery Charger block
and USB Detector blocks and the status registers. But the setting registers are
not initialized.
Writing “0” release reset operation.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
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18. Jul. 2017, Rev.001
8.5.57. PROTECT_SET
Access Un-protect Setting for Address 3Fh
Command Code:
3Eh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
PROTECT_SET[15]
Access Un-protect Setting for the “debug command map”
14
PROTECT_SET[14]
(debug and production test only)
13
PROTECT_SET[13]
12
PROTECT_SET[12]
11
PROTECT_SET[11]
10
PROTECT_SET[10]
9
PROTECT_SET[9]
8
PROTECT_SET[8]
7
PROTECT_SET[7]
6
PROTECT_SET[6]
5
PROTECT_SET[5]
4
PROTECT_SET[4]
3
PROTECT_SET[3]
2
PROTECT_SET[2]
1
PROTECT_SET[1]
0
PROTECT_SET[0]
8.5.58. MAP_SET
Change Command Code Map
Command Code:
3Fh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
MAP_SET[15]
Change Command Code Map
14
MAP_SET[14]
13
MAP_SET[13]
12
MAP_SET[12]
11
MAP_SET[11]
10
MAP_SET[10]
9
MAP_SET[9]
8
MAP_SET[8]
7
MAP_SET[7]
6
MAP_SET[6]
5
MAP_SET[5]
4
MAP_SET[4]
3
MAP_SET[3]
2
MAP_SET[2]
1
MAP_SET[1]
0
MAP_SET[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
73/127
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Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.59. VM_CTRL_SET
SAR-ADC Measurement Control Setting
Command Code:
40h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
ADCINTERVAL[1]
SAR-ADC Operating Interval Setting.
14
ADCINTERVAL[0]
00b: No Interval/ 01b: 1ms/ 10b: 10ms/ 11b: 100msec
13
ADCMOD[1]
Operation Mode Setting
12
ADCMOD[0]
00b: Power Down/ 01b: Normal Operation
11
ADCTMOD[1]
Test Mode Setting
10
ADCTMOD[0]
00b: Normal Operation/ 01b: Test Mode
9
EXTIADPEN
IADP (Input current Limit setting pin) voltage measurement.
“1”: Enable / “0”: Disable.
8
VSYSENB
VSYS voltage measurement.
“1”: Enable / “0”: Disable.
7
VCCENB
VCC voltage measurement.
“1”: Enable / “0”: Disable.
6
VBUSENB
VBUS voltage measurement.
“1”: Enable / “0”: Disable.
5
VACPENB
VACP voltage measurement.
“1”: Enable / “0”: Disable.
4
IACPENB
IACP voltage measurement.
“1”: Enable / “0”: Disable.
3
THERMENB
TSENSE voltage measurement.
“1”: Enable / “0”: Disable.
2
VBATENB
VBAT voltage measurement.
“1”: Enable / “0”: Disable.
1
IBATMENB
IBATM current (discharge) measurement.
“1”: Enable / “0”: Disable.
0
IBATPENB
IBATP current (current) measurement.
“1”: Enable / “0”: Disable.
8.5.60. THERM_WINDOW_SET1
JEITA Battery Temperature Window Setting 1
Command Code:
41h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
TMPTHR1B[7]
Upper threshold of T1, JEITA profile.
14
TMPTHR1B[6]
(200-THERM1B [7:0]) deg-C.
13
TMPTHR1B[5]
-55 to 200 deg-C, 1 deg-C steps.
12
TMPTHR1B[4]
11
TMPTHR1B[3]
10
TMPTHR1B[2]
9
TMPTHR1B[1]
8
TMPTHR1B[0]
7
TMPTHR1A[7]
Lower threshold of T1, JEITA profile.
6
TMPTHR1A[6]
(200-THERM1A [7:0]) deg-C.
5
TMPTHR1A[5]
-55 to 200 deg-C, 1 deg-C steps.
4
TMPTHR1A[4]
3
TMPTHR1A[3]
2
TMPTHR1A[2]
1
TMPTHR1A[1]
0
TMPTHR1A[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
74/127
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TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.61. THERM_WINDOW_SET2
JEITA Battery Temperature Window Setting 2
Command Code:
42h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
TMPTHR2B[7]
Upper threshold of T2, JEITA profile.
14
TMPTHR2B[6]
(200-THERM2B [7:0]) deg-C.
13
TMPTHR2B[5]
-55 to 200 deg-C, 1 deg-C steps.
12
TMPTHR2B[4]
11
TMPTHR2B[3]
10
TMPTHR2B[2]
9
TMPTHR2B[1]
8
TMPTHR2B[0]
7
TMPTHR2A[7]
Lower threshold of T2, JEITA profile.
6
TMPTHR2A[6]
(200-THERM2A [7:0]) deg-C.
5
TMPTHR2A[5]
-55 to 200 deg-C, 1 deg-C steps.
4
TMPTHR2A[4]
3
TMPTHR2A[3]
2
TMPTHR2A[2]
1
TMPTHR2A[1]
0
TMPTHR2A[0]
8.5.62. THERM_WINDOW_SET3
JEITA Battery Temperature Window Setting 3
Command Code:
43h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
TMPTHR3B[7]
Upper threshold of T3, JEITA profile.
14
TMPTHR3B[6]
(200-THERM3B [7:0]) deg-C.
13
TMPTHR3B[5]
-55 to 200 deg-C, 1 deg-C steps.
12
TMPTHR3B[4]
11
TMPTHR3B[3]
10
TMPTHR3B[2]
9
TMPTHR3B[1]
8
TMPTHR3B[0]
7
TMPTHR3A[7]
Lower threshold of T3, JEITA profile.
6
TMPTHR3A[6]
(200-THERM3A [7:0]) deg-C.
5
TMPTHR3A[5]
-55 to 200 deg-C, 1 deg-C steps.
4
TMPTHR3A[4]
3
TMPTHR3A[3]
2
TMPTHR3A[2]
1
TMPTHR3A[1]
0
TMPTHR3A[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
75/127
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TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.63. THERM_WINDOW_SET4
JEITA Battery Temperature Window Setting 4
Command Code:
44h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
TMPTHR4B[7]
Upper threshold of T4, JEITA profile.
14
TMPTHR4B[6]
(200-THERM4B [7:0]) deg-C.
13
TMPTHR4B[5]
-55 to 200 deg-C, 1 deg-C steps.
12
TMPTHR4B[4]
11
TMPTHR4B[3]
10
TMPTHR4B[2]
9
TMPTHR4B[1]
8
TMPTHR4B[0]
7
TMPTHR4A[7]
Lower threshold of T4, JEITA profile.
6
TMPTHR4A[6]
(200-THERM4A [7:0]) deg-C.
5
TMPTHR4A[5]
-55 to 200 deg-C, 1 deg-C steps.
4
TMPTHR4A[4]
3
TMPTHR4A[3]
2
TMPTHR4A[2]
1
TMPTHR4A[1]
0
TMPTHR4A[0]
8.5.64. THERM_WINDOW_SET5
JEITA Battery Temperature Window Setting 5
Command Code:
45h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
TMPTHR5B[7]
Upper threshold of T5, between T3 and T4.
14
TMPTHR5B[6]
(200-THERM5B [7:0]) deg-C.
13
TMPTHR5B[5]
-55 to 200 deg-C, 1 deg-C steps.
12
TMPTHR5B[4]
11
TMPTHR5B[3]
10
TMPTHR5B[2]
9
TMPTHR5B[1]
8
TMPTHR5B[0]
7
TMPTHR5A[7]
Lower threshold of T5, between T3 and T4.
6
TMPTHR5A[6]
(200-THERM5A [7:0]) deg-C.
5
TMPTHR5A[5]
-55 to 200 deg-C, 1 deg-C steps.
4
TMPTHR5A[4]
3
TMPTHR5A[3]
2
TMPTHR5A[2]
1
TMPTHR5A[1]
0
TMPTHR5A[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
76/127
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TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.65. IBATP_TH_SET
Battery Current (Charge) Interrupt Threshold Setting
Command Code:
46h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
IBATP_TH_SET[14]
Battery Current (Charge) Interrupt Threshold.
13
IBATP_TH_SET[13]
0 to 25,000mA, 1mA steps.
12
IBATP_TH_SET[12]
The register range : 0 to 32,752mA.
11
IBATP_TH_SET[11]
But the actual range : 0 to 25,000mA.
10
IBATP_TH_SET[10]
9
IBATP_TH_SET[9]
8
IBATP_TH_SET[8]
7
IBATP_TH_SET[7]
6
IBATP_TH_SET[6]
5
IBATP_TH_SET[5]
4
IBATP_TH_SET[4]
3
IBATP_TH_SET[3]
2
IBATP_TH_SET[2]
1
IBATP_TH_SET[1]
0
IBATP_TH_SET[0]
8.5.66. IBATM_TH_SET
Battery Current (Dis-charge) Interrupt Threshold Setting
Command Code:
47h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
IBATM_TH_SET[14]
Battery Current (Dis-charge) Interrupt Threshold.
13
IBATM_TH_SET[13]
0 to 25,000mA, 1mA steps.
12
IBATM_TH_SET[12]
The register range : 0 to 32,752mA.
11
IBATM_TH_SET[11]
But the actual range : 0 to 25,000mA.
10
IBATM_TH_SET[10]
9
IBATM_TH_SET[9]
8
IBATM_TH_SET[8]
7
IBATM_TH_SET[7]
6
IBATM_TH_SET[6]
5
IBATM_TH_SET[5]
4
IBATM_TH_SET[4]
3
IBATM_TH_SET[3]
2
IBATM_TH_SET[2]
1
IBATM_TH_SET[1]
0
IBATM_TH_SET[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
77/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.67. VBAT_TH_SET
Battery Voltage Interrupt Threshold Setting
Command Code:
48h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VBAT_TH_SET[14]
Battery Voltage Interrupt Threshold.
13
VBAT_TH_SET[13]
0 to 19,200mV, 1mV steps.
12
VBAT_TH_SET[12]
The register range : 0 to 32,767mV.
11
VBAT_TH_SET[11]
But the actual range : 0 to 19,200mV.
10
VBAT_TH_SET[10]
9
VBAT_TH_SET[9]
8
VBAT_TH_SET[8]
7
VBAT_TH_SET[7]
6
VBAT_TH_SET[6]
5
VBAT_TH_SET[5]
4
VBAT_TH_SET[4]
3
VBAT_TH_SET[3]
2
VBAT_TH_SET[2]
1
VBAT_TH_SET[1]
0
VBAT_TH_SET[0]
8.5.68. THERM_TH_SET
Battery Temperature Interrupt Threshold Setting
Command Code:
49h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
reserved
9
reserved
8
reserved
7
THERM_TH_SET[7]
Battery Temperature Interrupt Threshold Setting
6
THERM_TH_SET[6]
(200-THERM_TH_SET[7:0]) deg-C.
5
THERM_TH_SET[5]
-55 to 200 deg-C range, 1 deg-C steps.
4
THERM_TH_SET[4]
3
THERM_TH_SET[3]
2
THERM_TH_SET[2]
1
THERM_TH_SET[1]
0
THERM_TH_SET[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
78/127
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Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.69. IACP_TH_SET
Input Current (between ACP-ACN) Interrupt Threshold Setting
Command Code:
4Ah
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
IACP_TH_SET[14]
Input Current (between ACP-ACN) Interrupt Threshold.
13
IACP_TH_SET[13]
0 to 16,384mA, 1mA steps.
12
IACP_TH_SET[12]
The register range : 0 to 32,752mA.
11
IACP_TH_SET[11]
But the actual range : 0 to 16,383mA.
10
IACP_TH_SET[10]
9
IACP_TH_SET[9]
8
IACP_TH_SET[8]
7
IACP_TH_SET[7]
6
IACP_TH_SET[6]
5
IACP_TH_SET[5]
4
IACP_TH_SET[4]
3
IACP_TH_SET[3]
2
IACP_TH_SET[2]
1
IACP_TH_SET[1]
0
IACP_TH_SET[0]
8.5.70. VACP_TH_SET
Input Voltage (ACP) Interrupt Threshold Setting
Command Code:
4Bh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VACP_TH_SET[14]
Input Voltage (ACP) Interrupt Threshold.
13
VACP_TH_SET[13]
0 to 25,600mV, 1mV steps.
12
VACP_TH_SET[12]
The register range : 0 to 32,767mV.
11
VACP_TH_SET[11]
But the actual range : 0 to 25,600mV.
10
VACP_TH_SET[10]
9
VACP_TH_SET[9]
8
VACP_TH_SET[8]
7
VACP_TH_SET[7]
6
VACP_TH_SET[6]
5
VACP_TH_SET[5]
4
VACP_TH_SET[4]
3
VACP_TH_SET[3]
2
VACP_TH_SET[2]
1
VACP_TH_SET[1]
0
VACP_TH_SET[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
79/127
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Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.71. VBUS_TH_SET
VBUS Voltage Interrupt Threshold Setting
Command Code:
4Ch
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VBUS_TH_SET[14]
VBUS Voltage Interrupt Threshold.
13
VBUS_TH_SET[13]
0 to 25,600mV, 1mV steps.
12
VBUS_TH_SET[12]
The register range : 0 to 32,767mV.
11
VBUS_TH_SET[11]
But the actual range : 0 to 25,600mV.
10
VBUS_TH_SET[10]
9
VBUS_TH_SET[9]
8
VBUS_TH_SET[8]
7
VBUS_TH_SET[7]
6
VBUS_TH_SET[6]
5
VBUS_TH_SET[5]
4
VBUS_TH_SET[4]
3
VBUS_TH_SET[3]
2
VBUS_TH_SET[2]
1
VBUS_TH_SET[1]
0
VBUS_TH_SET[0]
8.5.72. VCC_TH_SET
VCC Voltage Interrupt Threshold Setting
Command Code:
4Dh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VCC_TH_SET[14]
VCC Voltage Interrupt Threshold.
13
VCC_TH_SET[13]
0 to 25,600mV, 1mV steps.
12
VCC_TH_SET[12]
The register range : 0 to 32,767mV.
11
VCC_TH_SET[11]
But the actual range : 0 to 25,600mV.
10
VCC_TH_SET[10]
9
VCC_TH_SET[9]
8
VCC_TH_SET[8]
7
VCC_TH_SET[7]
6
VCC_TH_SET[6]
5
VCC_TH_SET[5]
4
VCC_TH_SET[4]
3
VCC_TH_SET[3]
2
VCC_TH_SET[2]
1
VCC_TH_SET[1]
0
VCC_TH_SET[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
80/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.73. VSYS_TH_SET
VSYS Voltage Interrupt Threshold Setting
Command Code:
4Eh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VSYS_TH_SET[14]
VSYS Voltage Interrupt
13
VSYS_TH_SET[13]
0 to 19,200mV, 1mV steps.
12
VSYS_TH_SET[12]
The register range : 0 to 32,752mV.
11
VSYS_TH_SET[11]
But the actual range : 0 to 19,200mV.
10
VSYS_TH_SET[10]
9
VSYS_TH_SET[9]
8
VSYS_TH_SET[8]
7
VSYS_TH_SET[7]
6
VSYS_TH_SET[6]
5
VSYS_TH_SET[5]
4
VSYS_TH_SET[4]
3
VSYS_TH_SET[3]
2
VSYS_TH_SET[2]
1
VSYS_TH_SET[1]
0
VSYS_TH_SET[0]
8.5.74. EXTIADP_TH_SET
IADP (Input current Limit setting pin) Voltage Interrupt Threshold Setting
Command Code:
4Fh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
EXTIADP_TH_SET[11]
IADP (Input current Limit setting pin) voltage Interrupt
10
EXTIADP_TH_SET[10]
(for Debug use)
9
EXTIADP_TH_SET[9]
8
EXTIADP_TH_SET[8]
7
EXTIADP_TH_SET[7]
6
EXTIADP_TH_SET[6]
5
EXTIADP_TH_SET[5]
4
EXTIADP_TH_SET[4]
3
EXTIADP_TH_SET[3]
2
EXTIADP_TH_SET[2]
1
EXTIADP_TH_SET[1]
0
EXTIADP_TH_SET[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
81/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.75. IBATP_VAL
Battery Current (Charge) Measurement Value
Command Code:
50h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
IBATP_VAL[14]
Battery Current (Charge) Measurement Value
13
IBATP_VAL[13]
0 to 25,000mA, 1mA steps.
12
IBATP_VAL[12]
11
IBATP_VAL[11]
10
IBATP_VAL[10]
9
IBATP_VAL[9]
8
IBATP_VAL[8]
7
IBATP_VAL[7]
6
IBATP_VAL[6]
5
IBATP_VAL[5]
4
IBATP_VAL[4]
3
IBATP_VAL[3]
2
IBATP_VAL[2]
1
IBATP_VAL[1]
0
IBATP_VAL[0]
8.5.76. IBATP_AVE_VAL
Battery Current (Charge) Measurement Average Value
Command Code:
51h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
IBATP_AVE_VAL[14]
Battery Current (Charge) Measurement Average Value
13
IBATP_AVE_VAL[13]
0 to 25,000mA, 1mA steps.
12
IBATP_AVE_VAL[12]
11
IBATP_AVE_VAL[11]
10
IBATP_AVE_VAL[10]
9
IBATP_AVE_VAL[9]
8
IBATP_AVE_VAL[8]
7
IBATP_AVE_VAL[7]
6
IBATP_AVE_VAL[6]
5
IBATP_AVE_VAL[5]
4
IBATP_AVE_VAL[4]
3
IBATP_AVE_VAL[3]
2
IBATP_AVE_VAL[2]
1
IBATP_AVE_VAL[1]
0
IBATP_AVE_VAL[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
82/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.77. IBATM_VAL
Battery Current (Dis-charge) Measurement Value
Command Code:
52h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
IBATM_VAL[14]
Battery Current (Dis-charge) Measurement Value
13
IBATM_VAL[13]
0 to 25,000mA, 1mA steps.
12
IBATM_VAL[12]
11
IBATM_VAL[11]
10
IBATM_VAL[10]
9
IBATM_VAL[9]
8
IBATM_VAL[8]
7
IBATM_VAL[7]
6
IBATM_VAL[6]
5
IBATM_VAL[5]
4
IBATM_VAL[4]
3
IBATM_VAL[3]
2
IBATM_VAL[2]
1
IBATM_VAL[1]
0
IBATM_VAL[0]
8.5.78. IBATM_AVE_VAL
Battery Current (Dis-charge) Measurement Average Value
Command Code:
53h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
IBATM_AVE_VAL[14]
Battery Current (Dis-charge) Measurement Average Value
13
IBATM_AVE_VAL[13]
0 to 25,000mA, 1mA steps.
12
IBATM_AVE_VAL[12]
11
IBATM_AVE_VAL[11]
10
IBATM_AVE_VAL[10]
9
IBATM_AVE_VAL[9]
8
IBATM_AVE_VAL[8]
7
IBATM_AVE_VAL[7]
6
IBATM_AVE_VAL[6]
5
IBATM_AVE_VAL[5]
4
IBATM_AVE_VAL[4]
3
IBATM_AVE_VAL[3]
2
IBATM_AVE_VAL[2]
1
IBATM_AVE_VAL[1]
0
IBATM_AVE_VAL[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
83/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.79. VBAT_VAL
Battery Voltage Measurement Value
Command Code:
54h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
VBAT_VAL[14]
Battery Voltage Measurement Value
13
VBAT_VAL[13]
0 to 19,200mV, 1mV steps.
12
VBAT_VAL[12]
The register range : 0 to 32,767mV.
11
VBAT_VAL[11]
But the actual range : 0 to 19,200mV.
10
VBAT_VAL[10]
9
VBAT_VAL[9]
8
VBAT_VAL[8]
7
VBAT_VAL[7]
6
VBAT_VAL[6]
5
VBAT_VAL[5]
4
VBAT_VAL[4]
3
VBAT_VAL[3]
2
VBAT_VAL[2]
1
VBAT_VAL[1]
0
VBAT_VAL[0]
8.5.80. VBAT_AVE_VAL
Battery Voltage Measurement Average Value
Command Code:
55h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
VBAT_AVE_VAL[14]
Battery Voltage Measurement Average Value
13
VBAT_AVE_VAL[13]
0 to 19,200mV, 1mV steps.
12
VBAT_AVE_VAL[12]
The register range : 0 to 32,767mV.
11
VBAT_AVE_VAL[11]
But the actual range : 0 to 19,200mV.
10
VBAT_AVE_VAL[10]
9
VBAT_AVE_VAL[9]
8
VBAT_AVE_VAL[8]
7
VBAT_AVE_VAL[7]
6
VBAT_AVE_VAL[6]
5
VBAT_AVE_VAL[5]
4
VBAT_AVE_VAL[4]
3
VBAT_AVE_VAL[3]
2
VBAT_AVE_VAL[2]
1
VBAT_AVE_VAL[1]
0
VBAT_AVE_VAL[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
84/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.81. THERM_VAL
Thermistor Temperature Measurement Value
Command Code:
56h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
reserved
9
reserved
8
reserved
7
THERM_VAL[7]
Temperature Measurement Value
6
THERM_VAL[6]
(200-THERM_VAL[7:0]) deg-C.
5
THERM_VAL[5]
-55 to 200 deg-C, 1 deg-C steps.
4
THERM_VAL[4]
3
THERM_VAL[3]
Write Word access is available when VM_CTRL_SET.THERMENB bit = 0.
2
THERM_VAL[2]
1
THERM_VAL[1]
0
THERM_VAL[0]
8.5.82. VTH_VAL
Thermistor Measurement Voltage Value
Command Code:
57h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
VTH_VAL[11]
Thermistor Measurement Voltage Value
10
VTH_VAL[10]
(for Debug use)
9
VTH_VAL[9]
8
VTH_VAL[8]
7
VTH_VAL[7]
6
VTH_VAL[6]
5
VTH_VAL[5]
4
VTH_VAL[4]
3
VTH_VAL[3]
2
VTH_VAL[2]
1
VTH_VAL[1]
0
VTH_VAL[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
85/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.83. IACP_VAL
Input Current (between ACP-ACN) Measurement Value
Command Code:
58h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
IACP_VAL[14]
Input Current (between ACP-ACN) Measurement Value
13
IACP_VAL[13]
0 to 16,384mA, 1mA steps.
12
IACP_VAL[12]
11
IACP_VAL[11]
10
IACP_VAL[10]
9
IACP_VAL[9]
8
IACP_VAL[8]
7
IACP_VAL[7]
6
IACP_VAL[6]
5
IACP_VAL[5]
4
IACP_VAL[4]
3
IACP_VAL[3]
2
IACP_VAL[2]
1
IACP_VAL[1]
0
IACP_VAL[0]
8.5.84. IACP_AVE_VAL
Input Current (between ACP-ACN) Measurement Average Value
Command Code:
59h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
IACP_AVE_VAL[14]
Input Current (between ACP-ACN) Measurement Average Value
13
IACP_AVE_VAL[13]
0 to 16,384mA, 1mA steps.
12
IACP_AVE_VAL[12]
11
IACP_AVE_VAL[11]
10
IACP_AVE_VAL[10]
9
IACP_AVE_VAL[9]
8
IACP_AVE_VAL[8]
7
IACP_AVE_VAL[7]
6
IACP_AVE_VAL[6]
5
IACP_AVE_VAL[5]
4
IACP_AVE_VAL[4]
3
IACP_AVE_VAL[3]
2
IACP_AVE_VAL[2]
1
IACP_AVE_VAL[1]
0
IACP_AVE_VAL[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
86/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.85. VACP_VAL
Input Voltage (ACP) Measurement Value
Command Code:
5Ah
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
VACP_VAL[14]
Input Voltage (ACP) Measurement Value
13
VACP_VAL[13]
0 to 25,600mV, 1mV steps.
12
VACP_VAL[12]
The register range : 0 to 32,767mV.
11
VACP_VAL[11]
But the actual range : 0 to 25,600mV.
10
VACP_VAL[10]
9
VACP_VAL[9]
8
VACP_VAL[8]
7
VACP_VAL[7]
6
VACP_VAL[6]
5
VACP_VAL[5]
4
VACP_VAL[4]
3
VACP_VAL[3]
2
VACP_VAL[2]
1
VACP_VAL[1]
0
VACP_VAL[0]
8.5.86. VACP_AVE_VAL
Input Voltage (ACP) Measurement Average Value
Command Code:
5Bh
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
VACP_AVE_VAL[14]
Input Voltage (ACP) Measurement Average Value
13
VACP_AVE_VAL[13]
0 to 25,600mV, 1mV steps.
12
VACP_AVE_VAL[12]
The register range : 0 to 32,767mV.
11
VACP_AVE_VAL[11]
But the actual range : 0 to 25,600mV.
10
VACP_AVE_VAL[10]
9
VACP_AVE_VAL[9]
8
VACP_AVE_VAL[8]
7
VACP_AVE_VAL[7]
6
VACP_AVE_VAL[6]
5
VACP_AVE_VAL[5]
4
VACP_AVE_VAL[4]
3
VACP_AVE_VAL[3]
2
VACP_AVE_VAL[2]
1
VACP_AVE_VAL[1]
0
VACP_AVE_VAL[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
87/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.87. VBUS_VAL
VBUS Voltage Measurement Value
Command Code:
5Ch
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
VBUS_VAL[14]
VBUS Voltage Measurement Value
13
VBUS_VAL[13]
0 to 25,600mV, 1mV steps.
12
VBUS_VAL[12]
The register range : 0 to 32,767mV.
11
VBUS_VAL[11]
But the actual range : 0 to 25,600mV.
10
VBUS_VAL[10]
9
VBUS_VAL[9]
8
VBUS_VAL[8]
7
VBUS_VAL[7]
6
VBUS_VAL[6]
5
VBUS_VAL[5]
4
VBUS_VAL[4]
3
VBUS_VAL[3]
2
VBUS_VAL[2]
1
VBUS_VAL[1]
0
VBUS_VAL[0]
8.5.88. VBUS_AVE_VAL
VBUS Voltage Measurement Average Value
Command Code:
5Dh
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
VBUS_AVE_VAL[14]
VBUS Voltage Measurement Average Value
13
VBUS_AVE_VAL[13]
0 to 25,600mV, 1mV steps.
12
VBUS_AVE_VAL[12]
The register range : 0 to 32,767mV.
11
VBUS_AVE_VAL[11]
But the actual range : 0 to 25,600mV.
10
VBUS_AVE_VAL[10]
9
VBUS_AVE_VAL[9]
8
VBUS_AVE_VAL[8]
7
VBUS_AVE_VAL[7]
6
VBUS_AVE_VAL[6]
5
VBUS_AVE_VAL[5]
4
VBUS_AVE_VAL[4]
3
VBUS_AVE_VAL[3]
2
VBUS_AVE_VAL[2]
1
VBUS_AVE_VAL[1]
0
VBUS_AVE_VAL[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
88/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.89. VCC_VAL
VCC Voltage Measurement Value
Command Code:
5Eh
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
VCC_VAL[14]
VCC Voltage Measurement Value
13
VCC_VAL[13]
0 to 25,600mV, 1mV steps.
12
VCC_VAL[12]
The register range : 0 to 32,767mV.
11
VCC_VAL[11]
But the actual range : 0 to 25,600mV.
10
VCC_VAL[10]
9
VCC_VAL[9]
8
VCC_VAL[8]
7
VCC_VAL[7]
6
VCC_VAL[6]
5
VCC_VAL[5]
4
VCC_VAL[4]
3
VCC_VAL[3]
2
VCC_VAL[2]
1
VCC_VAL[1]
0
VCC_VAL[0]
8.5.90. VCC_AVE_VAL
VCC Voltage Measurement Average Value
Command Code:
5Fh
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
VCC_AVE_VAL[14]
VCC Voltage Measurement Average Value
13
VCC_AVE_VAL[13]
0 to 25,600mV, 1mV steps.
12
VCC_AVE_VAL[12]
The register range : 0 to 32,767mV.
11
VCC_AVE_VAL[11]
But the actual range : 0 to 25,600mV.
10
VCC_AVE_VAL[10]
9
VCC_AVE_VAL[9]
8
VCC_AVE_VAL[8]
7
VCC_AVE_VAL[7]
6
VCC_AVE_VAL[6]
5
VCC_AVE_VAL[5]
4
VCC_AVE_VAL[4]
3
VCC_AVE_VAL[3]
2
VCC_AVE_VAL[2]
1
VCC_AVE_VAL[1]
0
VCC_AVE_VAL[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
89/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.91. VSYS_VAL
VSYS Voltage Measurement Value
Command Code:
60h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
VSYS_VAL[14]
VSYS Voltage Measurement Value
13
VSYS_VAL[13]
12
VSYS_VAL[12]
0 to 19,200mV, 1mV steps.
11
VSYS_VAL[11]
The register range : 0 to 32,752mV.
10
VSYS_VAL[10]
But the actual range : 0 to 19,200mV.
9
VSYS_VAL[9]
8
VSYS_VAL[8]
7
VSYS_VAL[7]
6
VSYS_VAL[6]
5
VSYS_VAL[5]
4
VSYS_VAL[4]
3
VSYS_VAL[3]
2
VSYS_VAL[2]
1
VSYS_VAL[1]
0
VSYS_VAL[0]
8.5.92. VSYS_AVE_VAL
VSYS Voltage Measurement Average Value
Command Code:
61h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
VSYS_AVE_VAL[14]
VSYS Voltage Measurement Average Value
13
VSYS_AVE_VAL[13]
0 to 19,200mV, 1mV steps.
12
VSYS_AVE_VAL[12]
The register range : 0 to 32,752mV.
11
VSYS_AVE_VAL[11]
But the actual range : 0 to 19,200mV.
10
VSYS_AVE_VAL[10]
9
VSYS_AVE_VAL[9]
8
VSYS_AVE_VAL[8]
7
VSYS_AVE_VAL[7]
6
VSYS_AVE_VAL[6]
5
VSYS_AVE_VAL[5]
4
VSYS_AVE_VAL[4]
3
VSYS_AVE_VAL[3]
2
VSYS_AVE_VAL[2]
1
VSYS_AVE_VAL[1]
0
VSYS_AVE_VAL[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
90/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.93. EXTIADP_VAL
IADP (Input current Limit setting pin) Voltage Measurement Value
Command Code:
62h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
EXTIADP_VAL[11]
IADP (Input current Limit setting pin) voltage Measurement Value
10
EXTIADP_VAL[10]
(for Debug use)
9
EXTIADP_VAL[9]
8
EXTIADP_VAL[8]
7
EXTIADP_VAL[7]
6
EXTIADP_VAL[6]
5
EXTIADP_VAL[5]
4
EXTIADP_VAL[4]
3
EXTIADP_VAL[3]
2
EXTIADP_VAL[2]
1
EXTIADP_VAL[1]
0
EXTIADP_VAL[0]
8.5.94. EXTIADP_AVE_VAL
IADP (Input current Limit setting pin) Voltage Measurement Average Value
Command Code:
63h
Bus Protocol:
Read Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
EXTIADP_AVE_VAL[11]
IADP (Input current Limit setting pin) voltage Measurement Average Value
10
EXTIADP_AVE_VAL[10]
(for Debug use)
9
EXTIADP_AVE_VAL[9]
8
EXTIADP_AVE_VAL[8]
7
EXTIADP_AVE_VAL[7]
6
EXTIADP_AVE_VAL[6]
5
EXTIADP_AVE_VAL[5]
4
EXTIADP_AVE_VAL[4]
3
EXTIADP_AVE_VAL[3]
2
EXTIADP_AVE_VAL[2]
1
EXTIADP_AVE_VAL[1]
0
EXTIADP_AVE_VAL[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
91/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.95. VACPCLPS_TH_SET
VACP Collapse Detect Threshold Voltage Setting
Command Code:
64h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
VACPCLPS_TH_SET[14]
VACP Anti-collapse entry voltage threshold.
13
VACPCLPS_TH_SET[13]
3,840 to 32,640mV, 128mV steps.
12
VACPCLPS_TH_SET[12]
The register range: 0 to 32,640mV.
11
VACPCLPS_TH_SET[11]
But the actual range: 3,840 to 25,088mV.
10
VACPCLPS_TH_SET[10]
“00h”setting disables VACP collapse detection.
9
VACPCLPS_TH_SET[9]
8
VACPCLPS_TH_SET[8]
7
VACPCLPS_TH_SET[7]
6
reserved
5
reserved
4
reserved
3
reserved
2
reserved
1
reserved
0
reserved
8.5.96. INT0_SET
1st Level Interrupt Setting
Command Code:
68h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
reserved
9
reserved
8
reserved
7
INT7_EN
2nd Level Interrupt 7 (SAR-ADC) Enable.
“1”: Enable / “0”: Disable.
6
INT6_EN
2nd Level Interrupt 6 (Charger) Enable.
“1”: Enable / “0”: Disable.
5
INT5_EN
2nd Level Interrupt 5 (Charger) Enable.
“1”: Enable / “0”: Disable.
4
INT4_EN
2nd Level Interrupt 4 (VSYS) Enable.
“1”: Enable / “0”: Disable.
3
INT3_EN
2nd Level Interrupt 3 (Battery) Enable.
“1”: Enable / “0”: Disable.
2
INT2_EN
2nd Level Interrupt 2 (VCC) Enable.
“1”: Enable / “0”: Disable.
1
INT1_EN
2nd Level Interrupt 1 (VBUS) Enable.
“1”: Enable / “0”: Disable.
0
INT0_EN
1st Level Interrupt Enable.
“1”: Enable / “0”: Disable.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
92/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.97. INT1_SET
2nd Level Interrupt Setting 1 (VBUS)
Command Code:
69h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
VBUS_RBUV_DET
Enabling interrupt of entering to VBUS reverse buck boost voltage low.
“1”: Enable / “0”: Disable.
14
VBUS_RBUV_RES
Enabling interrupt of exit from VBUS reverse buck boost voltage low.
“1”: Enable / “0”: Disable.
13
reserved
12
reserved
11
reserved
10
reserved
9
VBUS_TH_DET
Enabling interrupt VBUS Voltage > VBUS_TH_SET.
“1”: Enable / “0”: Disable.
8
VBUS_TH_RES
Enabling interrupt VBUS Voltage <= VBUS_TH_SET.
“1”: Enable / “0”: Disable.
7
reserved
6
VBUS_IIN_MOD
Enabling interrupt of VBUS input current-limit modified.
“1”: Enable / “0”: Disable.
5
VBUS_OV_DET
Enabling interrupt of VBUS over voltage detected.
“1”: Enable / “0”: Disable.
4
VBUS_OV_RES
Enabling interrupt of VBUS over voltage resumed
“1”: Enable / “0”: Disable.
3
VBUS_CLPS_DET
Enabling interrupt of entering to VBUS Anti-collapse operation.
“1”: Enable / “0”: Disable.
2
VBUS_CLPS RES
Enabling interrupt of exit from VBUS Anti-collapse operation.
“1”: Enable / “0”: Disable.
1
VBUS_DET
Enabling interrupt of VBUS detect.
“1”: Enable / “0”: Disable.
0
VBUS_RES
Enabling interrupt of VBUS removal.
“1”: Enable / “0”: Disable.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
93/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.98. INT2_SET
2nd Level Interrupt Setting 2 (VCC)
Command Code:
6Ah
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
VCC_RBUV_DET
Enabling interrupt of entering to VCC reverse buck boost voltage low.
“1”: Enable / “0”: Disable.
14
VCC_RBUV_RES
Enabling interrupt of exit from VCC reverse buck boost voltage low.
“1”: Enable / “0”: Disable.
13
reserved
12
reserved
11
reserved
10
reserved
9
VCC_TH_DET
Interrupt VCC Voltage > VCC_TH_SET.
“1”: Enable / “0”: Disable.
8
VCC_TH_RES
Interrupt VCC Voltage <= VCC_TH_SET.
“1”: Enable / “0”: Disable.
7
reserved
6
VCC_IIN_MOD
Interrupt of VCC/VACP input current-limit modified.
“1”: Enable / “0”: Disable.
(VACP-input is enabled when VCC_EN=VBUS_EN=0/ VCC-input is
enabled when VCC_EN=1)
5
VCC_OVP_DET
Interrupt of VCC over voltage detected.
“1”: Enable / “0”: Disable.
4
VCC_OVP_RES
Interrupt of VCC over voltage resumed
“1”: Enable / “0”: Disable.
3
VCC_CLPS_DET
Interrupt of entering to VCC/VACP Anti-collapse operation.
“1”: Enable / “0”: Disable.
(VACP-input is enabled when VCC_EN=VBUS_EN=0/ VCC-input is
enabled when VCC_EN=1)
2
VCC_CLPS_RES
Interrupt of exit from VCC/VACP Anti-collapse operation.
“1”: Enable / “0”: Disable.
(VACP-input is enabled when VCC_EN=VBUS_EN=0/ VCC-input is
enabled when VCC_EN=1)
1
VCC_DET
Interrupt of VCC detect.
“1”: Enable / “0”: Disable.
0
VCC_RES
Interrupt of VCC removal.
“1”: Enable / “0”: Disable.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
94/127
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Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.99. INT3_SET
2nd Level Interrupt Setting 3 (Battery)
Command Code:
6Bh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
TH_DET
Interrupt of the thermistor detected.
“1”: Enable / “0”: Disable.
14
TH_RMV
Interrupt of the thermistor removal.
“1”: Enable / “0”: Disable.
13
reserved
12
reserved
11
TMP_OUT_DET
Interrupt of the thermistor out of the charging range.
“1”: Enable / “0”: Disable.
10
TMP_OUT_RES
Interrupt of the thermistor in to the charging range.
“1”: Enable / “0”: Disable.
9
VBAT_TH_DET
Interrupt VBAT Voltage > VBAT_TH_SET.
“1”: Enable / “0”: Disable.
8
VBAT_TH_RES
Interrupt VBAT Voltage <= VBAT_TH_SET.
“1”: Enable / “0”: Disable.
7
IBAT_SHORT_DET
Interrupt of Battery over current detected.
“1”: Enable / “0”: Disable.
6
IBAT_SHORT_RES
Interrupt of Battery over current resumed.
“1”: Enable / “0”: Disable.
5
VBAT_OV_DET
Interrupt of VBAT over voltage detected.
“1”: Enable / “0”: Disable.
4
VBAT_OV_RES
Interrupt of VBAT over voltage resumed.
“1”: Enable / “0”: Disable.
3
BAT_ASSIST_DET
Interrupt of Entering to Battery-assist mode.
“1”: Enable / “0”: Disable.
2
BAT_ASSIST_RES
Interrupt of Exiting from Battery-assist mode.
“1”: Enable / “0”: Disable.
1
reserved
0
reserved
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
95/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.100. INT4_SET
2nd Level Interrupt Setting 4 (VSYS)
Command Code:
6Ch
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
reserved
9
VSYS_TH_DET
Interrupt VSYS Voltage > VSYS_TH_SET.
“1”: Enable / “0”: Disable.
8
VSYS_TH_RES
Interrupt VSYS Voltage <= VSYS_TH_SET.
“1”: Enable / “0”: Disable.
7
reserved
6
reserved
5
VSYS_OV_DET
Interrupt of VSYS over voltage detected.
“1”: Enable / “0”: Disable.
4
VSYS_OV_RES
Interrupt of VSYS over voltage resumed.
“1”: Enable / “0”: Disable.
3
VSYS_SHT_DET
Interrupt of VSYS short circuit detected.
“1”: Enable / “0”: Disable.
2
VSYS_SHT_RES
Interrupt of VSYS short circuit resumed.
“1”: Enable / “0”: Disable.
1
VSYS_UV_DET
Interrupt of VSYS under voltage detected.
“1”: Enable / “0”: Disable.
0
VSYS_UV_RES
Interrupt of VSYS under voltage resumed.
“1”: Enable / “0”: Disable.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
96/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.101. INT5_SET
2nd Level Interrupt Setting 5 (Charger)
Command Code:
6Dh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
OTP_LOAD_DONE
Interrupt of OTP load done.
“1”: Enable / “0”: Disable.
12
PWR_ON
Interrupt of Power-on.
“1”: Enable / “0”: Disable.
11
EXTIADP_TRNS
Interrupt IADP voltage range transition.
“1”: Enable / “0”: Disable.
10
reserved
9
EXTIADP_TH_DET
Interrupt IADP (Input current Limit setting pin) voltage >
EXTIADP_TH_SET.
“1”: Enable / “0”: Disable.
8
EXIADP_TH_RES
Interrupt IADP (Input current Limit setting pin) voltage <=
EXTIADP_TH_SET.
“1”: Enable / “0”: Disable.
7
BAT_MNT_DET
Interrupt of entering to Battery Maintenance charging.
“1”: Enable / “0”: Disable.
6
BAT_MNT_RES
Interrupt of exit from Battery Maintenance charging.
“1”: Enable / “0”: Disable.
5
TSD_DET
Interrupt of the TSD detected.
“1”: Enable / “0”: Disable.
4
TSD_RES
Interrupt of the TSD resumed.
“1”: Enable / “0”: Disable.
3
CHGWDT_EXP
Interrupt of Charger Watchdog Timer expired.
“1”: Enable / “0”: Disable.
2
THERMWDT_EXP
Interrupt of Battery Temperature Watchdog Timer expired.
“1”: Enable / “0”: Disable.
1
TMP_TRNS
Interrupt of the Battery Temperature range transition.
“1”: Enable / “0”: Disable.
0
CHG_TRNS
Interrupt of Charger-State transition.
“1”: Enable / “0”: Disable.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
97/127
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Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.102. INT6_SET
2nd Level Interrupt Setting 6 (Charger)
Command Code:
6Eh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
VBUS_UCD_PORT_DET
Interrupt of USB Port contact detected on the VBUS side.
“1”: Enable / “0”: Disable.
12
VBUS_UCD_UCHG_DET
Interrupt of USB Charger detected on the VBUS side.
“1”: Enable / “0”: Disable.
11
VBUS_UCD_URID_RMV
Interrupt of USB ID contact removed on the VBUS side.
“1”: Enable / “0”: Disable.
10
VBUS_UCD_OTG_DET
Interrupt of USB OTG device detected on the VBUS side.
“1”: Enable / “0”: Disable.
9
reserved
8
VBUS_UCD_URID_MOD
Interrupt of USB ID resistance change on the VBUS side.
“1”: Enable / “0”: Disable.
7
reserved
6
reserved
5
VCC_UCD_PORT_DET
Interrupt of USB Port contact detected on the VCC side.
“1”: Enable / “0”: Disable.
4
VCC_UCD_UCHG_DET
Interrupt of USB Charger detected on the VCC side.
“1”: Enable / “0”: Disable.
3
VCC_UCD_URID_RMV
Interrupt of USB ID contact removed on the VCC side.
“1”: Enable / “0”: Disable.
2
VCC_UCD_OTG_DET
Interrupt of USB OTG device detected on the VCC side.
“1”: Enable / “0”: Disable.
1
reserved
0
VCC_UCD_URID_MOD
Interrupt of USB ID resistance change on the VCC side.
“1”: Enable / “0”: Disable.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
98/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.103. INT7_SET
2nd Level Interrupt Setting 7 (SAR-ADC)
Command Code:
6Fh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
PROCHOT_DET
Interrupt of PROCHOT# asserted.
“1”: Enable / “0”: Disable.
14
PROCHOT_RES
Interrupt of PROCHOT# de-asserted.
“1”: Enable / “0”: Disable.
13
reserved
12
reserved
11
VACP_DET
Interrupt of VACP detect.
“1”: Enable / “0”: Disable.
10
VACP_RES
Interrupt of VACP removal.
“1”: Enable / “0”: Disable.
9
VACP_TH_DET
Interrupt Input Voltage (ACP) Voltage > VACP_TH_SET.
“1”: Enable / “0”: Disable.
8
VACP_TH_RES
Interrupt Input Voltage (ACP) Voltage <= VACP_TH_SET.
“1”: Enable / “0”: Disable.
7
IACP_TH_DET
Interrupt Input Current (between ACP-ACN) > IACP_TH_SET.
“1”: Enable / “0”: Disable.
6
IACP_THE_RES
Interrupt Input Current (between ACP-ACN) <= IACP_TH_SET.
“1”: Enable / “0”: Disable.
5
THERM_TH_DET
Interrupt TSENSE Voltage > THERM_TH_SET.
“1”: Enable / “0”: Disable.
4
THERM_TH_RES
Interrupt TSENSE Voltage <= THERM_TH_SET.
“1”: Enable / “0”: Disable.
3
IBATM_TH_DET
Interrupt Battery Current (Dis-charge) > IBATM_TH_SET.
“1”: Enable / “0”: Disable.
2
IBATM_TH_RES
Interrupt Battery Current (Dis-charge) <= IBATM_TH_SET.
“1”: Enable / “0”: Disable.
1
IBATP_TH_DET
Interrupt Battery Current (Charge) > IBATP_TH_SET.
“1”: Enable / “0”: Disable.
0
IBATP_TH_RES
Interrupt Battery Current (Charge) <= IBATP_TH_SET.
“1”: Enable / “0”: Disable.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
99/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.104. INT0_STATUS
1st Level Interrupt Status
Command Code:
70h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
reserved
9
reserved
8
reserved
7
INT7_STATUS
2nd Level Interrupt 7 (SAR-ADC) Status.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
6
INT6_STATUS
2nd Level Interrupt 6 (Charger) Status.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
5
INT5_STATUS
2nd Level Interrupt 5 (Charger) Status.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
4
INT4_STATUS
2nd Level Interrupt 4 (VSYS) Status.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
3
INT3_STATUS
2nd Level Interrupt 3 (Battery) Status.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
2
INT2_STATUS
2nd Level Interrupt 2 (VCC) Status.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
1
INT1_STATUS
2nd Level Interrupt 1 (VBUS) Status.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
0
INT0_STATUS
1st Level Interrupt Status.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
100/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.105. INT1_STATUS
2nd Level Interrupt Status 1 (VBUS)
Command Code:
71h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
VBUS_RBUV_DET
Interrupt status of entering to VBUS reverse buck boost voltage low.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
14
VBUS_RBUV_RES
Interrupt status of exit from VBUS reverse buck boost voltage low.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
13
reserved
12
reserved
11
reserved
10
reserved
9
VBUS_TH_DET
Interrupt status VBUS Voltage > VBUS_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
8
VBUS_TH_RES
Interrupt status VBUS Voltage <= VBUS_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
7
reserved
6
VBUS_IIN_MOD
Interrupt status of VBUS input current-limit modified.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
5
VBUS_OV_DET
Interrupt status of VBUS over voltage detected.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
4
VBUS_OV_RES
Interrupt status of VBUS over voltage resumed.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
3
VBUS_CLPS_DET
Interrupt status of entering to VBUS Anti-collapse operation.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
2
VBUS_CLPS RES
Interrupt status of exit from VBUS Anti-collapse operation.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
1
VBUS_DET
Interrupt status of VBUS detect.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
0
VBUS_RES
Interrupt status of VBUS removal.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
101/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.106. INT2_STATUS
2nd Level Interrupt Status 2 (VCC)
Command Code:
72h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
VCC_RBUV_DET
Interrupt status of entering to VCC reverse buck boost voltage low.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
14
VCC_RBUV_RES
Interrupt status of exit from VCC reverse buck boost voltage low.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
13
reserved
12
reserved
11
reserved
10
reserved
9
VCC_TH_DET
Interrupt status VCC Voltage > VCC_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
8
VCC_TH_RES
Interrupt status VCC Voltage <= VCC_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
7
reserved
6
VCC_IIN_MOD
Interrupt status of VCC/VACP input current-limit modified.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
(VACP-input is enabled when VCC_EN=VBUS_EN=0/ VCC-input is
enabled when VCC_EN=1)
5
VCC_OVP_DET
Interrupt status of VCC over voltage detected.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
4
VCC_OVP_RES
Interrupt status of VCC over voltage resumed.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
3
VCC_CLPS_DET
Interrupt status of entering to VCC/VACP Anti-collapse operation.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
(VACP-input is enabled when VCC_EN=VBUS_EN=0/ VCC-input is
enabled when VCC_EN=1)
2
VCC_CLPS_RES
Interrupt status of exit from VCC/VACP Anti-collapse operation.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
(VACP-input is enabled when VCC_EN=VBUS_EN=0/ VCC-input is
enabled when VCC_EN=1)
1
VCC_DET
Interrupt status of VCC detect.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
0
VCC_RES
Interrupt status of VCC removal.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
102/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.107. INT3_STATUS
2nd Level Interrupt Status 3 (Battery)
Command Code:
73h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
TH_DET
Interrupt status of the thermistor detected.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
14
TH_RMV
Interrupt status of the thermistor removal.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
13
reserved
12
reserved
11
TMP_OUT_DET
Interrupt status of the thermistor out of the charging range.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
10
TMP_OUT_RES
Interrupt status of the thermistor in to the charging range.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
9
VBAT_TH_DET
Interrupt status VBAT Voltage > VBAT_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
8
VBAT_TH_RES
Interrupt status VBAT Voltage <= VBAT_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
7
IBAT_SHORT_DET
Interrupt status of Battery over current detected.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
6
IBAT_SHORT_RES
Interrupt status of Battery over current resumed.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
5
VBAT_OV_DET
Interrupt status of VBAT over voltage detected.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
4
VBAT_OV_RES
Interrupt status of VBAT over voltage resumed.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
3
BAT_ASSIST_DET
Interrupt status of Entering to Battery-assist mode.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
2
BAT_ASSIST_RES
Interrupt status of Exiting from Battery-assist mode.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
1
reserved
0
reserved
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
103/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.108. INT4_STATUS
2nd Level Interrupt Status 4 (VSYS)
Command Code:
74h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
reserved
12
reserved
11
reserved
10
reserved
9
VSYS_TH_DET
Interrupt status VSYS Voltage > VSYS_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
8
VSYS_TH_RES
Interrupt status VSYS Voltage <= VSYS_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
7
reserved
6
reserved
5
VSYS_OV_DET
Interrupt status of VSYS over voltage detected.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
4
VSYS_OV_RES
Interrupt status of VSYS over voltage resumed.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
3
VSYS_SHT_DET
Interrupt status of VSYS short circuit detected.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
2
VSYS_SHT_RES
Interrupt status of VSYS short circuit resumed.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
1
VSYS_UV_DET
Interrupt status of VSYS under voltage detected.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
0
VSYS_UV_RES
Interrupt status of VSYS under voltage resumed.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
104/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.109. INT5_STATUS
2nd Level Interrupt Status 5 (Charger)
Command Code:
75h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
OTP_LOAD_DONE
Interrupt status of OTP load done.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
12
PWR_ON
Interrupt status of Power-on.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
11
EXTIADP_TRNS
Interrupt status of IADP voltage range transition.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
10
reserved
9
EXTIADP_TH_DET
Interrupt status of IADP (Input current Limit setting pin) voltage >
EXTIADP_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
8
EXIADP_TH_RES
Interrupt status of IADP (Input current Limit setting pin) voltage <=
EXTIADP_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
7
BAT_MNT_DET
Interrupt status of entering to Battery Maintenance charging.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
6
BAT_MNT_RES
Interrupt status of exit from Battery Maintenance charging.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
5
TSD_DET
Interrupt status of the TSD detected.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
4
TSD_RES
Interrupt status of the TSD resumed.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
3
CHGWDT_EXP
Interrupt status of Charger Watchdog Timer expired.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
2
THERMWDT_EXP
Interrupt status of Battery Temperature Watchdog Timer expired.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
1
TMP_TRNS
Interrupt status of Temperature range transition.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
0
CHG_TRNS
Interrupt status of Charger-State transition.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
105/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.110. INT6_STATUS
2nd Level Interrupt Status 6 (Charger)
Command Code:
76h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
reserved
14
reserved
13
VBUS_UCD_PORT_DET
Interrupt status of USB Port contact detected on the VBUS side.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
12
VBUS_UCD_UCHG_DET
Interrupt status of USB Charger detected on the VBUS side.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
11
VBUS_UCD_URID_RMV
Interrupt status of USB ID contact removed on the VBUS side.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
10
VBUS_UCD_OTG_DET
Interrupt status of USB OTG device detected on the VBUS side.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
9
reserved
8
VBUS_UCD_URID_MOD
Interrupt status of USB ID resistance change on the VBUS side.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
7
reserved
6
reserved
5
VCC_UCD_PORT_DET
Interrupt status of USB Port contact detected on the VCC side.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
4
VCC_UCD_UCHG_DET
Interrupt status of USB Charger detected on the VCC side.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
3
VCC_UCD_URID_RMV
Interrupt status of USB ID contact removed on the VCC side.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
2
VCC_UCD_OTG_DET
Interrupt status of USB OTG device detected on the VCC side.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
1
reserved
0
VCC_UCD_URID_MOD
Interrupt status of USB ID resistance change on the VCC side.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
106/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.111. INT7_STATUS
2nd Level Interrupt Status 7 (SAR-ADC)
Command Code:
77h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
PROCHOT_DET
Interrupt status of PROCHOT# asserted.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
14
PROCHOT_RES
Interrupt status of PROCHOT# de-asserted.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
13
reserved
12
reserved
11
VACP_DET
Interrupt status of VACP detect.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
10
VACP_RES
Interrupt status of VACP removal.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
9
VACP_TH_DET
Interrupt status Input Voltage (ACP) Voltage > VADP_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
8
VACP_TH_RES
Interrupt status Input Voltage (ACP) Voltage <= VADP_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
7
IACP_TH_DET
Interrupt status Input Current (between ACP-ACN) > IADP_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
6
IACP_THE_RES
Interrupt status Input Current (between ACP-ACN) <= IADP_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
5
THERM_TH_DET
Interrupt status TSENSE Voltage > THERM_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
4
THERM_TH_RES
Interrupt status TSENSE Voltage <= THERM_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
3
IBATM_TH_DET
Interrupt status Battery Current (Dis-charge) > IBATM_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
2
IBATM_TH_RES
Interrupt status Battery Current (Dis-charge) <= IBATM_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
1
IBATP_TH_DET
Interrupt status Battery Current (Charge) > IBATP_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
0
IBATP_TH_RES
Interrupt status Battery Current (Charge) <= IBATP_TH_SET.
“1”: Event occurred / “0”: No event.
“1-Write”: Status clear.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
107/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.112. REG0
Reserved Register 0 (for future use)
Command Code:
78h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
RESERVE_REG0[15]
Reserved Register 0 (for future use)
14
RESERVE_REG0[14]
13
RESERVE_REG0[13]
12
RESERVE_REG0[12]
11
RESERVE_REG0 [11]
10
RESERVE_REG0 [10]
9
RESERVE_REG0 [9]
8
RESERVE_REG0 [8]
7
RESERVE_REG0 [7]
6
RESERVE_REG0 [6]
5
RESERVE_REG0 [5]
4
RESERVE_REG0 [4]
3
RESERVE_REG0 [3]
2
RESERVE_REG0 [2]
1
RESERVE_REG0 [1]
0
RESERVE_REG0 [0]
8.5.113. REG1
Reserved Register 1 (for future use)
Command Code:
79h
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
RESERVE_REG1[15]
Reserved Register 1 (for future use)
14
RESERVE_REG1[14]
13
RESERVE_REG1[13]
12
RESERVE_REG1[12]
11
RESERVE_REG1[11]
10
RESERVE_REG1[10]
9
RESERVE_REG1[9]
8
RESERVE_REG1[8]
7
RESERVE_REG1[7]
6
RESERVE_REG1[6]
5
RESERVE_REG1[5]
4
RESERVE_REG1[4]
3
RESERVE_REG1[3]
2
RESERVE_REG1[2]
1
RESERVE_REG1[1]
0
RESERVE_REG1[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
108/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.114. OTPREG0
Input current limit degradation setting. For ditails, please see 8.5.6. CUR_ILIM_VAL.
Command Code:
7Ah
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
RESERVE_OTPREG0[15]
Reserved OTP-loaded Register 0 (for future use)
14
RESERVE_OTPREG0[14]
13
RESERVE_OTPREG0[13]
12
RESERVE_OTPREG0[12]
11
ILIM_DECREASE[11]
Input current limit degradation setting when anti-collapse occurs.
10
ILIM_DECREASE[10]
9
ILIM_DECREASE[9]
8
ILIM_DECREASE[8]
7
ILIM_DECREASE[7]
6
ILIM_DECREASE[6]
5
ILIM_DECREASE[5]
4
ILIM_DECREASE[4]
3
ILIM_DECREASE[3]
2
ILIM_DECREASE[2]
1
ILIM_DECREASE[1]
0
ILIM_DECREASE[0]
8.5.115. OTPREG1
Reserved OTP-loaded Register 1 (for future use)
Command Code:
7Bh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
RESERVE_OTPREG1[15]
Reserved OTP-loaded Register 1 (for future use)
14
RESERVE_OTPREG1[14]
13
RESERVE_OTPREG1[13]
12
RESERVE_OTPREG1[12]
11
RESERVE_OTPREG1[11]
10
RESERVE_OTPREG1[10]
9
RESERVE_OTPREG1[9]
8
RESERVE_OTPREG1[8]
7
RESERVE_OTPREG1[7]
6
RESERVE_OTPREG1[6]
5
RESERVE_OTPREG1[5]
4
RESERVE_OTPREG1[4]
3
RESERVE_OTPREG1[3]
2
RESERVE_OTPREG1[2]
1
RESERVE_OTPREG1[1]
0
RESERVE_OTPREG1[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
109/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.116. SMBREG
Power Save Mode Setting.
Command Code:
7Ch
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
SMBREG[15]
Reserved SMBus Clock Domain Register (for future use)
14
SMBREG[14]
13
SMBREG[13]
12
SMBREG[12]
11
SMBREG[11]
10
SMBREG[10]
9
SMBREG[9]
8
SMBREG[8]
7
SMBREG[7]
6
SMBREG[6]
5
SMBREG[5]
4
SMBREG[4]
3
SMBREG[3]
2
POWER_SAVE_MODE[2]
Power Save Mode Setting.
0h: Normal Operation
1h: BGATE ON with PROCHOT# Monitored only System voltage/
2h: BGATE ON with PROCHOT# Monitored only System voltage (1ms)/
5h: BGATE ON without PROCHOT#//
6h: BGATE OFF/
Other: reserved.
1
POWER_SAVE_MODE[1]
0
POWER_SAVE_MODE[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
110/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
BD99954 enters into 4 power modes by SMBus writing RESERVE_SMBREG0SMBREG.POWER_SAVE_MODE[2:0] register.
And BD99954 exits from a power mode by SMBus clearing RESERVE_SMBREG0SMBREG.POWER_SAVE_MODE[2:0]
register.
If BD99954 is in a power mode, BD99954 exits from power mode automatically by VBUS/VCC plugged-in and goes back to
power mode automatically by VBUS/VCC plugged-off.
POWER_SAVE_MODE[2:0]=1h: (BGATE ON with PROCHOT# Monitored only System voltage) sample operation flow.
BD99954
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
111/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
POWER_SAVE_MODE[2:0] =2h: BGATE ON with PROCHOT# Monitored only System voltage (1ms interval) sample operation
flow.
BD99954
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
112/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
POWER_SAVE_MODE[2:0]=5h: BGATE ON without PROCHOT# sample operation flow.
BD99954
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
113/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
POWER_SAVE_MODE[2:0]=6h: BGATE OFF sample operation flow.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
114/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.5.117. DEBUG_MODE_SET
Debug Mode Setting
Command Code:
7Fh
Bus Protocol:
Read/Write Word
Bit
Symbol
Description
15
DEBUG_MODE_SET[15]
Debug Mode Setting
14
DEBUG_MODE_SET[14]
13
DEBUG_MODE_SET[13]
12
DEBUG_MODE_SET[12]
11
DEBUG_MODE_SET[11]
10
DEBUG_MODE_SET[10]
9
DEBUG_MODE_SET[9]
8
DEBUG_MODE_SET[8]
7
DEBUG_MODE_SET[7]
6
DEBUG_MODE_SET[6]
5
DEBUG_MODE_SET[5]
4
DEBUG_MODE_SET[4]
3
DEBUG_MODE_SET[3]
2
DEBUG_MODE_SET[2]
1
DEBUG_MODE_SET[1]
0
DEBUG_MODE_SET[0]
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
115/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
8.6. Resister Default Value
Register
Address Name
Read/
Write
OTP
Bit
OTP/POR
Value(HEX)
OTP/POR
Value(DEC)
Unit
[V,mA,min]
Address
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
00h
CHGSTM_STATUS
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
01h
VBAT/VSYS_STATUS
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
02h
VBUS/VCC_STATUS
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
03h
CHGOP_STATUS
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
04h
WDT_STATUS
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
05h
CUR_ILIM_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
06h
SEL_ILIM_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
07h
IBUS_LIM_SET
R/W
Yes
0
0
0
0
0
1
0
1
1
1
0
0
0
0
0
0
05C0
1472
mA
08h
ICC_LIM_SET
R/W
Yes
0
0
0
0
0
1
0
1
1
1
0
0
0
0
0
0
05C0
1472
mA
09h
IOTG_LIM_SET
R/W
Yes
0
0
0
0
0
1
0
1
1
1
1
0
0
0
0
0
05E0
1504
mA
0Ah
VIN_CTRL_SET
R/W
Yes
0
0
0
0
0
0
0
0
1
1
1
0
0
0
0
0
00E0
-
HEX
0Bh
CHGOP_SET1
R/W
Yes
0
1
1
0
1
1
0
0
0
1
1
0
1
0
0
0
6C68
-
HEX
0Ch
CHGOP_SET2
R/W
Yes
0
0
0
0
0
0
0
0
0
0
1
0
1
1
1
0
002E
-
HEX
0Dh
VBUSCLPS_TH_SET
R/W
Yes
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
0
V
0Eh
VCCCLPS_TH_SET
R/W
Yes
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
0
V
0Fh
CHGWDT_SET
R/W
Yes
0
0
1
1
0
0
0
0
0
0
0
1
0
0
0
0
3010
192,16
min
10h
BATTWDT_SET
R/W
Yes
0
0
0
0
0
1
1
0
0
0
1
1
0
0
0
0
0630
24,48
min
11h
VSYSREG_SET
R/W
Yes
0
0
1
0
0
0
1
1
0
0
0
0
0
0
0
0
2300
8.96
V
12h
VSYSVAL_THH_SET
R/W
Yes
0
0
0
1
0
1
0
1
1
0
0
0
0
0
0
0
1580
5.504
V
13h
VSYSVAL_THL_SET
R/W
Yes
0
0
0
1
0
0
1
1
0
1
0
0
0
0
0
0
1340
4.928
V
14h
ITRICH_SET
R/W
Yes
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0100
256
mA
15h
IPRECH_SET
R/W
Yes
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0100
256
mA
16h
ICHG_SET
R/W
Yes
0
0
0
0
1
0
1
0
0
0
0
0
0
0
0
0
0A00
2560
mA
17h
ITERM_SET
R/W
Yes
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
0
mA
18h
VPRECHG_TH_SET
R/W
Yes
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0800
2.048
V
19h
VRBOOST_SET
R/W
Yes
0
0
0
1
0
0
1
1
1
1
0
0
0
0
0
0
13C0
5.056
V
1Ah
VFASTCHG_REG_SET1
R/W
Yes
0
0
1
0
0
0
0
0
1
1
0
1
0
0
0
0
20D0
8.4
V
1Bh
VFASTCHG_REG_SET2
R/W
Yes
0
0
1
0
0
0
0
0
1
1
0
1
0
0
0
0
20D0
8.4
V
1Ch
VFASTCHG_REG_SET3
R/W
Yes
0
0
1
0
0
0
0
0
1
1
0
1
0
0
0
0
20D0
8.4
V
1Dh
VRECHG_SET
R/W
Yes
0
0
0
1
1
1
1
1
1
0
1
1
0
0
0
0
1FB0
8.112
V
1Eh
VBATOVP_SET
R/W
Yes
0
0
1
0
0
0
1
0
1
1
0
1
0
0
0
0
22D0
8.912
V
1Fh
IBATSHORT_SET
R/W
Yes
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
4000
16384
mA
20h
PROCHOT_CTRL_SET
R/W
Yes
0
1
0
0
0
1
0
1
0
0
0
1
1
0
0
1
4519
-
HEX
21h
PROCHOT_ICRIT_SET
R/W
Yes
0
0
1
0
0
1
1
1
0
0
0
1
0
0
0
0
2710
10000
mA
22h
PROCHOT_INORM_SET
R/W
Yes
0
0
0
1
0
0
1
1
1
0
0
0
1
0
0
0
1388
5000
mA
23h
PROCHOT_IDCHG_SET
R/W
Yes
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
4000
16384
mA
24h
PROCHOT_VSYS_SET
R/W
Yes
0
0
0
1
0
0
1
1
0
1
0
0
0
0
0
0
1340
4.928
V
25h
PMON_IOUT_CTRL_SET
R/W
Yes
0
0
0
0
0
0
0
0
1
0
1
0
1
1
0
0
00AC
-
HEX
26h
PMON_DACIN_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
27h
IOUT_DACIN_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
28h
VCC_UCD_SET
R/W
Yes
0
0
0
0
0
0
0
0
1
1
0
1
0
0
0
0
00D0
-
HEX
29h
VCC_UCD_STATUS
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
2Ah
VCC_IDD_STATUS
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
2Bh
VCC_UCD_FCTRL_SET
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
2Ch
VCC_UCD_FCTRL_EN
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
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116/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
Register
Address Name
Read/
Write
OTP
Bit
OTP/POR
Value(HEX)
OTP/POR
Value(DEC)
Unit
[V,mA,min]
Address
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
30h
VBUS_UCD_SET
R/W
Yes
0
0
0
0
0
0
0
0
1
1
0
1
0
0
0
0
00D0
-
HEX
31h
VBUS_UCD_STATUS
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
32h
VBUS_IDD_STATUS
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
33h
VBUS_UCD_FCTRL_SET
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
34h
VBUS_UCD_FCTRL_EN
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
38h
CHIP_ID
R
Yes
0
0
0
0
0
0
1
1
0
1
0
0
0
1
1
0
0346
-
HEX
39h
CHIP_REV
R
Yes
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
1
0009
-
HEX
3Ah
IC_SET1
R/W
Yes
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0200
-
HEX
3Bh
IC_SET2
Yes
0000
-
HEX
3Ch
SYSTEM_STATUS
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
3Dh
SYSTEM_CTRL_SET
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
3Eh
PROTECT_SET
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
3Fh
MAP_SET
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
40h
VM_CTRL_SET
R/W
Yes
0
0
0
1
0
0
1
1
1
1
1
1
1
1
1
1
13FF
-
HEX
41h
THERM_WINDOW_SET1
R/W
Yes
1
1
0
0
0
0
1
1
1
1
0
0
0
1
1
0
C3C6
5,2
℃
42h
THERM_WINDOW_SET2
R/W
Yes
1
0
1
1
1
0
1
1
1
0
1
1
1
1
1
0
BBBE
13,10
℃
43h
THERM_WINDOW_SET3
R/W
Yes
1
0
0
1
1
0
1
1
1
0
0
1
1
1
1
0
9B9E
45,42
℃
44h
THERM_WINDOW_SET4
R/W
Yes
1
0
0
0
1
1
1
0
1
0
0
1
0
0
0
1
8E91
58,55
℃
45h
THERM_WINDOW_SET5
R/W
Yes
1
0
0
1
0
1
1
0
1
0
0
1
1
0
0
1
9699
50,47
℃
46h
IBATP_TH_SET
R/W
Yes
0
0
0
1
0
1
1
0
0
1
0
1
0
1
1
0
1656
5718
mA
47h
IBATM_TH_SET
R/W
Yes
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
4000
16384
mA
48h
VBAT_TH_SET
R/W
Yes
0
0
0
1
1
0
0
0
0
0
0
0
0
0
0
0
1800
6.144
V
49h
THERM_TH_SET
R/W
Yes
0
0
0
0
0
0
0
0
0
0
1
1
0
0
1
0
0032
150
℃
4Ah
IACP_TH_SET
R/W
Yes
0
0
0
1
0
0
1
1
1
0
0
0
1
0
0
0
1388
5000
mA
4Bh
VACP_TH_SET
R/W
Yes
0
0
0
0
1
1
1
0
1
1
0
1
1
0
0
0
0ED8
3.8
V
4Ch
VBUS_TH_SET
R/W
Yes
0
0
0
0
1
1
1
0
1
1
0
1
1
0
0
0
0ED8
3.8
V
4Dh
VCC_TH_SET
R/W
Yes
0
0
0
0
1
1
1
0
1
1
0
1
1
0
0
0
0ED8
3.8
V
4Eh
VSYS_TH_SET
R/W
Yes
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
0
V
4Fh
EXTIADP_TH_SET
R/W
Yes
0
0
0
0
0
1
1
1
0
1
1
1
0
1
1
1
0777
1.911
V
50h
IBATP_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
51h
IBATP_AVE_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
52h
IBATM_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
53h
IBATM_AVE_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
54h
VBAT_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
55h
VBAT_AVE_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
56h
THERM_VAL
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
57h
VTH_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
58h
IACP_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
59h
IACP_AVE_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
5Ah
VACP_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
5Bh
VACP_AVE_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
5Ch
VBUS_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
5Dh
VBUS_AVE_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
5Eh
VCC_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
5Fh
VCC_AVE_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
60h
VSYS_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
117/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
Register
Address Name
Read/
Write
OTP
Bit
OTP/POR
Value(HEX)
OTP/POR
Value(DEC)
Unit
[V,mA,min]
Address
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
61h
VSYS_AVE_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
62h
EXTIADP_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
63h
EXTIADP_AVE_VAL
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
64h
VACPCLPS_TH_SET
R/W
Yes
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
0
V
68h
INT0_SET
R/W
Yes
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
00FF
-
HEX
69h
INT1_SET
R/W
Yes
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
6Ah
INT2_SET
R/W
Yes
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
6Bh
INT3_SET
R/W
Yes
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
6Ch
INT4_SET
R/W
Yes
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
6Dh
INT5_SET
R/W
Yes
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
6Eh
INT6_SET
R/W
Yes
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
6Fh
INT7_SET
R/W
Yes
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
70h
INT0_STATUS
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
71h
INT1_STATUS
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
72h
INT2_STATUS
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
73h
INT3_STATUS
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
74h
INT4_STATUS
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
75h
INT5_STATUS
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
76h
INT6_STATUS
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
77h
INT7_STATUS
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
78h
RESERVE_REG0
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
79h
RESERVE_REG1
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
7Ah
OTPREG0
R/W
Yes
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
0
mA
7Bh
OTPREG1
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
7Ch
RESERVE_SMBREG0
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
7Dh
(reserved)
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
7Eh
(reserved)
R
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
7Fh
DEBUG_MODE_SET
R/W
No
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0000
-
HEX
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
118/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
9. I/O Equivalent circuit diagram
VCC_ID, VBUS_ID
IADP/RESET
VCC_ID
VBUS_ID
○
○
200k
10k
10k
○
○
1.26M 4K
10k
93Ω
REGN
IADP/RESET
○
○
30k
30k
○
○○
○
VCC_DPI, VCC_DMI, VBUS_DPI, VBUS_DMI
VCC_DPO, VCC_DMO, VBUS_DPO, VBUS_DMO
VCC_DPI
VCC_DMI
VBUS_DPI
VBUS_DMI
10k
10k
10k10k
10k
10.64k
VCC_DPO
VCC_DMO
VBUS_DPO
VBUS_DMO
10k
SCL
SDA
SCL
15k
250k
VREF
SDA
250k
(Next Page)
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
119/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
VREF
TSENSE
VREF
REGN
423k
704k
TSENSE
○
○
10k
○
○
IOUT
PMON
REGN
IOUT
100Ω
100Ω
PMON
100Ω
100Ω
REGN
REGN
ACP
REGN
1450k
ACP
600k
100k
1.33M
70k
(Next Page)
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
120/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
ACN, SRP, SRN
INT#, PROCHOT#, ACOK
ACN
SRP
SRN
INT#
PROCHOT#
ACOK
20Ω
BGATE, BATT
ACGATE1, ACGATE2, VBUS, VCC
BGATE
BATT
ACGATE1
ACGATE2
VBUS
VCC
9.2k
LG1, LG2
BOOT1, BOOT2, HG1, HG2, LX1, LX2
143k
REGN
LG1,2
GND
1M
BOOT1,2
LX1,2
GND
REGN
HG1,2
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
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BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
10. Ordering Information
B
D
9
9
9
5
4
M
W
V
-
E 2
Part Number
Package
MWV: UQFN040V5050
GW : UCSP55M3C
Packaging and forming specification
E2: Embossed tape and reel
11. Marking Diagrams
USCP55M3 (TOP VIEW)
Part Number Marking
LOT Number
954
1PIN MARK
A
UQFN040V5050 (TOP VIEW)
4 A
Part Number Marking
LOT Number
1PIN MARK
BD9995
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
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BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
12. Physical Dimension Tape and Reel Information
Package Name
UQFN040V5050
Package Name
UCSP55M3C
Figure 12-1 Package Dimensions in QFN
Figure 12-2 Package Dimensions in WL-CSP
Figure 12-3 Tape and Reel Information in QFN
Figure 12-4 Tape and Reel Information in WL-CSP
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
123/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
(BLANK PAGE)
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
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BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
13. Operational Notes
1. Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply
pins.
2. Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3. Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
OR
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. However,
pins that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground
due to back EMF or electromotive force. In such cases, the user should make sure that such voltages going below
ground will not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions
such as motor characteristics, supply voltage, operating frequency and PCB wiring to name a few.
4. Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5. Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, increase the board size
and copper area to prevent exceeding the Pd rating.
6. Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
7. Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing
of connections.
8. Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9. Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned off completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
11. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
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Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
Operational Notes – continued
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Figure xx. Example of monolithic IC structure
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe
Operation (ASO).
15. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below
the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat
damage.
16. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
17. Disturbance light (only BD99954GW)
In a device where a portion of silicon is exposed to light such as in a WL-CSP, IC characteristics may be affected due
to photoelectric effect. For this reason, it is recommended to come up with countermeasures that will prevent the chip
from being exposed to light.
18. Thermal Pad (only BD99954MWV)
Thermal pad connect GND terminal or open.
19. Power Path Sequece
This product is capable of turning both VCC and VBUS power paths ON simultaneously.
Please immediately turn the simultaneous power path ON if one of the VCC or VBUS port has been disconnected and
simultaneous ON is not needed.
If the simultaneous power path is not turned off immediately, and a new device is connected to the disconnected port,
there is a possibility that this device gets damaged.
In that case, ROHM cannot assume responsibility for the damage.
N N
P+P
N N
P+
P Substrate
GND
NP+
N N
P+
NP
P Substrate
GND GND
Parasitic
Elements
Pin A
Pin A
Pin B Pin B
B C
E
Parasitic
Elements
GND
Parasitic
Elements
CB
E
Transistor (NPN)Resistor
N Region
close-by
Parasitic
Elements
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
126/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
Operational Notes – continued
20. VBUS overshoot
There is possibility of voltage overshoot on VCC or VBUS inputs depending on settings and conditions for the following
parameters: input voltage (VBUS and VCC), input voltage for IADP (set by external voltage divider), total system
capacitance and respective ESR.
Please refer carefully to this datasheet and the separate application notes when making selection of those parameters
and register settings to properly match your design.
* Product structure: Silicon monolithic integrated circuit. ** This product is not designed to protect against radioactive rays.
Copyright: 2017 ROHM Co., Ltd. All rights reserved.
http://www.rohm.com/
127/127
BD99954MWV, BD99954GW
Datasheet
TSZ22111-14-001
TSZ02201-0B4B0A700040-1-2
18. Jul. 2017, Rev.001
Revision History
Revision Number
Description
Revision Date
001
Initial release.
12. Jul. 2017
Notice-PGA-E Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅣ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
DatasheetDatasheet
Notice – WE Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
