© 2003 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVCES IC= 1 mA, VGE = 0 V 1000 V
VGE(th) IC= 250 µA, VCE = VGE 2.5 5.0 V
ICES VCE = 0.8 VCES TJ = 25°C25µA
VGE = 0 V TJ = 125°C 250 µA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= ICE90, VGE = 15V 2.2 2.7 V
IGBT
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1000 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ1000 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C16A
IC90 TC= 90°C8A
ICM TC= 25°C, 1 ms 32 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 120 Ω ICM = 16 A
(RBSOA) Clamped inductive load @ 0.8 VCES
PCTC= 25°C54W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MdMounting torque with screw M3 0.45/4 Nm/lb.in.
Mounting torque with screw M3.5 0.55/5 Nm/lb.in.
Weight TO-220 4 g
TO-263 2 g
DS98565C(12/03)
Features
•International standard packages
JEDEC TO-220AB and TO-263AA
•Low VCE(sat)
- for minimum on-state conduction
losses
•MOS Gate turn-on
- drive simplicity
Applications
•AC motor speed control
•DC servo and robot drives
•DC choppers
•Uninterruptible power supplies (UPS)
•Switch-mode and resonant-mode
power supplies
•Capacitor discharge
Advantages
•Easy to mount with one screw
•Reduces assembly time and cost
•High power density
G
EC (TAB)
TO-263 AA (IXGA)
GCE
TO-220AB (IXGP)
IXGA 8N100
IXGP 8N100
Preliminary data sheet
VCES = 1000 V
IC25 = 16 A
VCE(sat) = 2.7 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
TO-263 AA Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
Pins: 1 - Gate 2 - Collector
3 - Emitter 4 - Collector
Bottom Side
TO-220 AB Dimensions
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs IC= IC90 VCE = 10 V 4 7.6 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IC(on) VGE = 10 V, VCE = 10V 40 A
Cies 595 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 34 pF
Cres 10 pF
Qg26.5 nC
Qge IC= IC90, VGE = 15 V, VCE = 0.5 VCES 4.8 nC
Qgc 8.5 nC
td(on) 15 ns
tri 30 ns
td(off) 600 1000 ns
tfi 390 900 ns
Eoff 2.3 5.0 mJ
td(on) 15 ns
tri 30 ns
Eon 0.5 mJ
td(off) 800 ns
tfi 630 ns
Eoff 3.7 mJ
RthJC 2.3 K/W
RthCK TO-220 0.5 K/W
Inductive load, TJ = 25°°
°°
°C
IC= IC90, VGE = 15 V
VCE = 800 V, RG = Roff = 120 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
Inductive load, TJ = 125°°
°°
°C
IC= IC90, VGE = 15 V
VCE = 800 V, RG = Roff = 120 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES,
higher TJ or increased RG
IXGA 8N100
IXGP 8N100
Min. Recommended Footprint
(Dimensions in inches and mm)
© 2003 IXYS All rights reserved
IXGA 8N100
IXGP 8N100
Fig. 2. Exte nded Output Characte ristics
@ 25 deg. C
0
10
20
30
40
50
60
70
0 2 4 6 8 101214161820
V
C E
- Volts
I
C
- Amperes
V
GE
= 15V
13V
5V
7V
9V
11V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
2
4
6
8
10
12
14
16
0.511.522.533.544.55
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
5V
7V
9V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
2
4
6
8
10
12
14
16
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V
C E
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
C E (sat )
- Normalize
d
I
C
= 8A
I
C
= 4A
V
GE
= 15V
I
C
= 16A
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
1
2
3
4
5
6
7
8
5 6 7 8 9 10 11 12 13 14 15 16 17
V
G E
- Volts
V
C E
- Volts
T
J
= 25ºC
I
C
= 16A
8A
4A
Fig. 6. Input Admittance
0
2
4
6
8
10
12
14
16
33.544.555.566.57
V
G E
- Volts
I
C
- Amperes
T
J
= 125ºC
25ºC
-40ºC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXGA 8N100
IXGP 8N100
Fig. 7. Transconductance
0
1
2
3
4
5
6
7
8
9
10
024681012141618
I
C
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 8. Gate Charge
0
3
6
9
12
15
0 3 6 9 12 15 18 21 24 27
Q
G
- nanoCoulombs
V
G E
- Volts
V
CE
= 500V
I
C
= 8A
I
G
= 10mA
Fig. 9. Capacitance
1
10
100
1000
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Capacitance - p F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 10. Maxim um Transient Therm al Resistance
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
1 10 100 1000
Pulse Width - milliseconds
R
(th) J C
-
(ºC/W)
