TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
1
12-18 GHz Ku-Band 2-Stage Driver Amplifier TGA2506
Key Features
•
12-18 GHz Bandwidth
•
17 dB Nominal Gain
•
> 14 dBm P1dB
•
Bias: 5,6,7 V, 40 ±
10% mA
Self Bias
•
0.5 um 3MI mmW
pHEMT Technology
•
Chip Dimensions: 1.19 x 0.83 x 0.1 mm
(0.047 x 0.031 x 0.004) in
Primary Applications
•
Point to Point Radio
•
Military Ku-Band
•
Space Ku-Band
•
VSAT
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id = 40 mA
ORL
0
2
4
6
8
10
12
14
16
11 12 13 14 15 16 17 18
Frequency (GHz)
P1dB (dBm)
IRL
Gain
8
10
12
14
16
18
20
8 10121416182022
Frequency (GHz)
Gain (dB)
-30
-25
-20
-15
-10
-5
0
Return Loss (dB)
Note: Datasheet is subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
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TABLE I
MAXIMUM RATINGS 1/
SYMBOL PARAMETER VALUE NOTES
V+Positive Supply Voltage 8 V 2/
I+Positive Supply Current (Quiescent) 57 mA 2/
PIN Input Continuous Wave Power 20 dBm
PDPower Dissipation 0.45 2/ 3/
TCH Operating Channel Temperature 150 0C4/ 5/
TMMounting Temperature (30 Seconds) 320 0C
TSTG Storage Temperature -65 to 150 0C
1/ These ratings represent the maximum operable values for this device
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD
.
3/ When operated at this bias condition with a base plate temperature of 70 0C, the median life is
reduced to 1E+7 hrs.
4/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD
.
5/ These ratings apply to each individual FET.
TGA2506
TABLE II
DC PROBE TESTS
(TA = 25 °C Nominal)
SYMBOL PARAMETER MINIMUM MAXIMUM VALUE
VBVGS2 Breakdown Voltage gate-source -30 -11 V
VBVGD2 Breakdown Voltage gate-drain -30 -11 V
VP2 Pinch-off Voltage -1.5 -0.3 V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
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TABLE III
ELECTRICAL CHARACTERISTICS
(Ta = 25 0C, Nominal)
TGA2506
PARAMETER TYPICAL UNITS
Drain Operating 6 V
Quiescent Current 40 ± 10% Self Bias mA
Small Signal Gain 17 dB
Input Return Loss 15 dB
Output Return Loss 15 dB
Output Power @ 1 dB Compression Gain 14 dBm
Noise Figure (@ Mid-band) 5.5 dB
TABLE IV
THERMAL INFORMATION
PARAMETER TEST CONDITIONS TCH
(OC)
RθJC
(°C/W)
TM
(HRS)
RθJC Thermal Resistance
(channel to Case)
Vd = 6 V
Id = 40 mA
Pdiss = 0.24 W
99 121 1.4E+8
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70oC baseplate temperature. Worst case condition with no RF applied, 100%
of DC power is dissipated.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
4
10
11
12
13
14
15
16
17
18
19
20
11 12 13 14 15 16 17 18 19
Frequency (GHz)
Gain (dB)
TGA2506
Preliminary Measured Data
Bias Conditions: Vd = 5, 6, 7 V, Id = 40 mA
4
6
8
10
12
14
16
18
20
22
24
11 12 13 14 15 16 17 18 19
Frequency (GHz)
Gain Over Temperature (dB)
-40 0C
+70 0C
Bias Conditions: Vd = 6 V, Id = 40 mA
7V 6V 5V
+25 0C
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
5
TGA2506
Preliminary Measured Data
Bias Conditions: Vd =5, 6, 7 V, Id = 40 mA
-40
-35
-30
-25
-20
-15
-10
-5
0
11 12 13 14 15 16 17 18 19
Frequency (GHz)
Input Return Loss (dB)
-40
-35
-30
-25
-20
-15
-10
-5
0
11 12 13 14 15 16 17 18 19
Frequency (GHz)
Output Return Loss (dB)
7V
6V
5V
5V
6V
7V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
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Preliminary Measured Data
Bias Conditions: Vd = 5, 6, 7 V, Id = 40 mA
TGA2506
10
11
12
13
14
15
16
17
18
19
20
12 13 14 15 16 17 18
Frequency (GHz)
Pout @ 1dB Gain Compression (dBm)
-10
-5
0
5
10
15
20
-25 -23 -21 -19 -17 -15 -13 -11 -9 -7 -5 -3 -1 1
Pin (dBm)
Pout (dBm)
13
14
15
16
17
18
19
Power Gain (dB)
Bias Conditions: Vd = 5, 6, 7 V, Id = 40 mA, Frequency @ 15GHz
7V
6V
5V
5V
6V
7V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
7
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id = 40 mA
TGA2506
0
5
10
15
20
25
30
123456789101112
Output Power per Tone (dBm)
OIP3 (dBm)
5
10
15
20
25
30
35
40
123456789101112
Output Power per Tone (dBm)
OIP3 (dBm)
Frequency @ 12 GHz
Frequency @ 14 GHz
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
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Preliminary Measured Data
TGA2506
Bias Conditions: Vd = 6 V, Id = 40 mA
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
12 13 14 15 16 17
Frequency (GHz)
Noise Figure (dB)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
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Mechanical Drawing
TGA2506
GaAs
MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
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Chip Assembly Diagram
TGA2506
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
This configuration is for a self-bias logic pad current search
with connection for bin # 1 . See Table IV for alternate bin
# to get the current typical of 40 ± 10% mA.
TABLE IV
PAD CONNECTIONS
BIN NO. CONNECTION
1 Pad 4 to Pad 5
2 Pad 4 to Pad 6
3 Pad 4 to Pad 7
4 Pad 4 to Pad 8
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
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Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA2506
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C (30 seconds max).
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Maximum stage temperature is 200C.
