FQB22P10TM_NL - Fairchild Semiconductor

FQB22P10 / FQI22P10

Rev. C1, Oct 2008

FQB22P10 / FQI22P1 0

100V P-Channel MOSF ET

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as audio amplifier,

high efficiency switching DC/DC converters, and DC motor

control.

Features

• -22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V

• Low gate charge ( typical 40 nC)

• Low Crss ( typical 160 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

Absolute Maxi mum Ratings TC = 25°C unless otherwise noted

Thermal Characteristi cs

Symbol Parameter FQB22P10 / FQI22P10 Units

VDSS Drain-Source Voltage -100 V

IDDrain Current - Continuous (TC = 25°C) -22 A

- Continuous (TC = 100°C) -15.6 A

IDM Drain Current - Pulsed (Note 1) -88 A

VGSS Gate-Source Voltage ±30 V

EAS Single Pulsed Avalanche Energy (Note 2) 710 mJ

IAR Avalanche Current (Note 1) -22 A

EAR Repetitive Avalanche Energy (Note 1) 12.5 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns

PDPower Dissipation (TA = 25°C) * 3.75 W

Power Dissipation (TC = 25°C) 125 W

- Derate above 25°C 0.83 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case -- 1.2 °C/W

RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

D2-PAK

FQB Series I2-PAK

FQI Series

GSDS

October 2008

QFET

•RoHS Compliant

Rev. C1, Oct 2008

FQB22P10 / FQI22P10

(Note 4)

(Note 4, 5)

(Note 4)

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 2.2mH, IAS = -22A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -22A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Condit ions Min Typ Max Units

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = -250 µA-100 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Vo ltage Temperature

Coefficient ID = -250 µA, Referenced to 25°C -- -0.1 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = -100 V, VGS = 0 V -- -- -1 µA

VDS = -80 V, TC = 125°C -- -- -10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA

On Characteri st ics

VGS(th) Gate Threshold Volt age VDS = VGS, ID = -250 µA-2.0 -- -4.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = -10 V, ID = -11 A -- 0.096 0.125 Ω

gFS Forward Transconductance VDS = -40 V, ID = -11 A -- 13.5 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = -25 V, VGS = 0 V,

f = 1.0 MHz

-- 1170 1500 pF

Coss Output Capacitance -- 460 600 pF

Crss Reverse Transfer Capacit ance -- 160 200 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = -50 V, ID = -22 A,

RG = 25 Ω

-- 17 45 ns

trTurn-On Rise Time -- 170 350 ns

td(off) Turn-Off De l a y Time -- 6 0 130 ns

tfTurn-Off F a ll Time -- 110 230 n s

QgTotal Gate Ch a rge VDS = -80 V, ID = -22 A,

VGS = -10 V

-- 40 50 nC

Qgs Gate-Source Charge -- 7.0 -- nC

Qgd Gate-Drain Charge -- 21 -- nC

Drain-Source Diod e Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- -22 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -88 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = -22 A -- -- -4.0 V

trr Reverse Recovery Time VGS = 0 V, I S = -22 A,

dIF / dt = 100 A/µs

-- 110 -- ns

Qrr Reverse Recovery Charge -- 0.6 -- µC

FQB22P10 / FQI22P10

Rev. C1, Oct 2008

0 102030405060708090100

0.0

0.1

0.2

0.3

0.4

0.5

※ No te : TJ = 25 ℃

VGS = - 20V

VGS = - 10V

RDS(on) [Ω],

Drain-Source O n-Resistance

-ID , Drain Current [A]

10-1 100101

100

101

VGS

To p : -1 5 .0 V

-10 .0 V

-8.0 V

-7.0 V

-6.0 V

-5.5 V

-5.0 V

Bo tto m : -4.5 V

※ Note s :

1. 2 5 0 μs Pulse Test

2. T C = 25℃

-ID, D ra in Curr en t [A ]

-VDS, Drain-Source V oltage [V]

01020304050

VDS = -50V

VDS = -20V

VDS = -80V

※ Note : ID = -22 A

-VGS, Gate-Source Voltage [V]

QG, T o tal G a te Ch arge [nC ]

10-1 100101

500

1000

1500

2000

2500

3000

3500 Ciss = Cgs + C gd (C ds = shorted)

Coss = Cds + Cgd

Crss = C gd

※ No te s :

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

-VDS, Drain-Source Voltage [V]

246810

10-1

100

101

※ Notes :

1. V DS = -40V

2. 2 5 0 μs Pu lse Test

-55℃

175℃

25℃

-ID , Drain Current [A]

-VGS , Gate-Source Voltage [V]

Typical Characteristics

Figure 5. C apacitance Cha rac te ri st i cs Figure 6. Ga te Ch arge Characteri stics

Figu re 3. On-R esistan ce Variation vs.

Drain Current and Gate Voltage Figure 4. Body Diode Fo rward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On- R egi on Charact er i st ic s

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6

10-1

100

101

25℃

175℃

※

N o te s :

1 . V GS = 0V

2. 250μs Pulse T e st

-IDR , Reverse Drain Current [A]

-VSD , S o ur ce -Drain V o lta g e [V ]

Figure 2. Transfer Characteristics

FQB22P10 / FQI22P10

Rev. C1, Oct 2008

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

※ Note s :

1 . Z θJC(t) = 1.2 ℃/W Ma x .

2 . D u ty F a c to r, D = t1/t2

3 . T JM - T C = PDM * Z θJC(t)

single p ulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC

(t), T herm al R esponse

t1, S quare W ave Pulse D uration [sec]

25 50 75 100 125 150 175

-ID, Drain Current [A]

TC, Case Temperature [℃

]

100101102

10-1

100

101

102

10 ms1 ms

100 µs

Operation in This Area

is Limited by R DS(on)

※ Notes :

1. TC = 25 oC

2. TJ = 175 oC

3. Single Pulse

-ID, Dra in Cur re nt [A ]

-VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

※ Notes :

1. V GS = -10 V

2. ID = -11 A

RDS(ON) , (Norm alized)

Drain-Source On-Resistance

TJ, Junction Tem perature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

※

N o te s :

1. V GS = 0 V

2. ID = -250 μA

-BV DSS , (No r ma liz e d )

D rain-Source Breakdo wn V oltage

TJ, Junction T em perature [oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figu re 7. Br ea kdown Vol ta ge Variation

vs. Temperature Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Tr ansient Therm al Res pons e Cur ve

PDM

FQB22P10 / FQI22P10

Rev. C1, Oct 2008

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

Charge

VGS

-10V Qg

Qgs Qgd

-3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

Charge

VGS

-10V Qg

Qgs Qgd

-3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

VDS

VGS 10%

90%

td(on) tr

ton toff

td(off) tf

VDD

-10V

VDS RL

DUT

VGS

VDS

VGS 10%

90%

td(on) tr

ton toff

td(off) tf

VDD

-10V

VDS RL

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

-10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

-10V DUT

t p

FQB22P10 / FQI22P10

Rev. C1, Oct 2008

Peak Diode Reco ver y dv /d t Tes t Circuit & Waveforms

DUT

VDS

Driver

RGCompliment of DUT

(N-Channel)

VGS • dv/dt controlled by RG

•I

SD con trolled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

DUT

VDS

Driver

RGCompliment of DUT

(N-Channel)

VGS • dv/dt controlled by RG

•I

SD con trolled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

FQB22P10 / FQI22P10

Dimensions in Millimeters

Rev. C1, Oct 2008

Package Dimensions

D2 - PAK

FQB22P10 / FQI22P10

Dimensions in Millimeters

Rev. C1, Oct 2008

Package Dimensions (Continued)

I2 - PAK

FQB22P10 / FQI22P10

FQB22P10 / FQI22P10 Rev. C1 www.fairchildsemi.com

Rev. I37

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