QFET (R) FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. * * * * * * * * -22A, -100V, RDS(on) = 0.125 @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating RoHS Compliant D D G G S D2-PAK G D S FQB Series FQI Series Absolute Maximum Ratings Symbol VDSS ID I2-PAK S TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current FQB22P10 / FQI22P10 -100 Units V -22 A - Continuous (TC = 100C) -15.6 A (Note 1) -88 A 30 V 710 mJ IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) -22 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) * (Note 1) 12.5 -6.0 3.75 mJ V/ns W 125 0.83 -55 to +175 W W/C C 300 C dv/dt PD TJ, TSTG TL - Pulsed (Note 3) Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 1.2 Units C/W RJA RJA Thermal Resistance, Junction-to-Ambient * -- 40 C/W Thermal Resistance, Junction-to-Ambient -- 62.5 C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2008 Fairchild Semiconductor Corporation Rev. C1, Oct 2008 FQB22P10 / FQI22P10 October 2008 Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units -100 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = -250 A, Referenced to 25C -- -0.1 VDS = -100 V, VGS = 0 V -- -- -1 A VDS = -80 V, TC = 125C -- -- -10 A Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA -2.0 -- -4.0 V -- 0.096 0.125 -- 13.5 -- S -- 1170 1500 pF -- 460 600 pF -- 160 200 pF IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -11 A gFS Forward Transconductance VDS = -40 V, ID = -11 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -50 V, ID = -22 A, RG = 25 (Note 4, 5) VDS = -80 V, ID = -22 A, VGS = -10 V (Note 4, 5) -- 17 45 ns -- 170 350 ns -- 60 130 ns -- 110 230 ns -- 40 50 nC -- 7.0 -- nC -- 21 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -22 A ISM -- -- -88 A -- -- -4.0 V -- 110 -- ns -- 0.6 -- C VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -22 A Drain-Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -22 A, dIF / dt = 100 A/s (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.2mH, IAS = -22A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -22A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2008 Fairchild Semiconductor Corporation Rev. C1, Oct 2008 FQB22P10 / FQI22P10 Electrical Characteristics FQB22P10 / FQI22P10 Typical Characteristics VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.0 V -5.5 V -5.0 V Bottom : -4.5 V 1 10 -ID , Drain Current [A] -ID, Drain Current [A] Top : 1 10 175 25 0 10 -55 0 10 Notes : 1. VDS = -40V 2. 250 s Pulse Test Notes : 1. 250 s Pulse Test 2. TC = 25 -1 -1 0 10 10 1 10 2 10 4 6 8 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 2. Transfer Characteristics 0.5 -I DR , Reverse Drain Current [A] RDS(on) [ ], Drain-Source On-Resistance 0.4 VGS = - 10V 0.3 VGS = - 20V 0.2 0.1 1 10 0 10 175 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 -1 0.0 0 10 20 30 40 50 60 70 80 90 100 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3500 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 Coss Notes : 1. VGS = 0 V 2. f = 1 MHz 2000 Crss 1000 500 -V GS , Gate-Source Voltage [V] VDS = -50V 2500 1500 VDS = -20V 10 Ciss Capacitance [pF] 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] VDS = -80V 8 6 4 2 Note : ID = -22 A 0 0 -1 10 0 10 1 10 -VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics (c)2008 Fairchild Semiconductor Corporation 0 10 20 30 40 50 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. C1, Oct 2008 (Continued) 2.5 1.2 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage FQB22P10 / FQI22P10 Typical Characteristics 1.0 Notes : 1. VGS = 0 V 2. ID = -250 A 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 Notes : 1. VGS = -10 V 2. ID = -11 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 25 Operation in This Area is Limited by R DS(on) 2 10 20 1 ms -I D, Drain Current [A] -I D, Drain Current [A] 100 s 10 ms 1 10 DC 0 10 Notes : 15 10 5 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 100 125 150 175 Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 N o te s : 1 . Z J C ( t) = 1 .2 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .2 0 .1 10 -1 0 .0 5 PDM 0 .0 2 0 .0 1 JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [] -VDS, Drain-Source Voltage [V] t1 Z s i n g l e p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve (c)2008 Fairchild Semiconductor Corporation Rev. C1, Oct 2008 FQB22P10 / FQI22P10 Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K Qg 200nF 12V -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL t on VDD VGS RG td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD DUT -10V tp (c)2008 Fairchild Semiconductor Corporation VDD Time VDS (t) ID (t) IAS BVDSS Rev. C1, Oct 2008 FQB22P10 / FQI22P10 Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt (c)2008 Fairchild Semiconductor Corporation Rev. C1, Oct 2008 FQB22P10 / FQI22P10 Package Dimensions D2 - PAK Dimensions in Millimeters (c)2008 Fairchild Semiconductor Corporation Rev. C1, Oct 2008 FQB22P10 / FQI22P10 Package Dimensions (Continued) I2 - PAK Dimensions in Millimeters (c)2008 Fairchild Semiconductor Corporation Rev. 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