NRVBD650CTT4G - ON Semiconductor

June, 2017 − Rev. 14

1Publication Order Number:

MBRD620CT/D

MBRD620CT,

NRVBD620VCT, SBRV620CT

Series

Switch-mode

Power Rectifiers

DPAK−3 Surface Mount Package

These state−of−the−art devices are designed for use in switching

power supplies, inverters and as free wheeling diodes.

Features

•Extremely Fast Switching

•Extremely Low Forward Drop

•Platinum Barrier with Avalanche Guardrings

•NRVBD and SBRV Prefixes for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC−Q101 Qualified and PPAP Capable

•These Devices are Pb−Free and are RoHS Compliant

Mechanical Characteristics:

•Case: Epoxy, Molded

•Weight: 0.4 Gram (Approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•ESD Ratings:

♦Machine Model = C

♦Human Body Model = 3B

SCHOTTKY BARRIER

RECTIFIERS

6.0 AMPERES, 20 − 60 VOLTS

ORDERING INFORMATION

See detailed ordering and shipping information in the

package dimensions section on page 5 of this data sheet.

www.onsemi.com

A = Assembly Location*

Y = Year

WW = Work Week

B6x0T = Device Code

x = 2, 3, 4, 5, or 6

G = Pb−Free Package

DPAK

CASE 369C

MARKING DIAGRAM

AYWW

6x0TG

* The Assembly Location Code (A) is front side

optional. In cases where the Assembly Location is

stamped in the package bottom (molding ejecter

pin), the front side assembly code may be blank.

MBRD620CT, NRVBD620VCT, SBRV620CT Series

www.onsemi.com

MAXIMUM RATINGS

Rating Symbol

MBRD/NRVBD/SBRV

Unit

620CT 630CT 640CT 650CT 660CT

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

20 30 40 50 60 V

Average Rectified Forward Current

TC = 130°C (Rated VR)

Per Diode

Per Device

IF(AV)

Peak Repetitive Forward Current,

TC = 130°C (Rated VR, Square Wave, 20 kHz)

Per Diode

IFRM

Nonrepetitive Peak Surge Current − (Surge applied at rated load

conditions halfwave, single phase, 60 Hz)

IFSM 75 A

Peak Repetitive Reverse Surge Current (2 ms, 1 kHz) IRRM 1 A

Operating Junction Temperature (Note 1) TJ−65 to +175 °C

Storage Temperature Tstg −65 to +175 °C

Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS PER DIODE

Characteristic Symbol Value Unit

Maximum Thermal Resistance, Junction−to−Case RqJC 6°C/W

Maximum Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 80 °C/W

2. Rating applies when surface mounted on the minimum pad size recommended.

ELECTRICAL CHARACTERISTICS PER DIODE

Characteristic Symbol Value Unit

Maximum Instantaneous Forward Voltage (Note 3)

iF = 3 Amps, TC = 25°C

iF = 3 Amps, TC = 125°C

iF = 6 Amps, TC = 25°C

iF = 6 Amps, TC = 125°C

VF0.7

0.65

0.9

0.85

Maximum Instantaneous Reverse Current (Note 3)

(Rated dc Voltage, TC = 25°C)

(Rated dc Voltage, TC = 125°C)

iR0.1

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

MBRD620CT, NRVBD620VCT, SBRV620CT Series

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 1. Typical Forward Voltage, Per Leg

Figure 2. Typical Reverse Current,* Per Leg

Figure 3. Average Power Dissipation, Per Leg

1.21.00

vF, INSTANTANEOUS VOLTAGE (VOLTS)

100

VR, REVERSE VOLTAGE (VOLTS)

40 700

0.1

0.0001

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

1.00

8.0

6.0

4.0

2.0

iF, INSTANTANEOUS FORWARD CURRENT (AMPS)

PF(AV) , AVERAGE POWER DISSIPATION (WATTS)

1.0

0.40.2 0.6 0.8

50 6010 20 30

1000

3.0 4.0 5.0 6.0 7.0 10

0.1

1.4 8.0 9.0

9.0

7.0

5.0

3.0

1.0

, REVERSE CURRENT (mA)

1.0

0.01

TC = 25°C

150°C

125°C

75°CTJ = 150°C

IPK/IAV = 20

SINE

WAVE

SQUARE

WAVE

10 5

TJ = 175°C

*The curves shown are typical for the highest voltage device in the

voltage grouping. Typical reverse current for lower voltage selections

can be estimated from these curves if VR is sufficient below rated VR.

150°C

75°C

25°C

0.2

0.3

0.5

0.7

2.0

3.0

5.0

7.0

175°C

100

0.001

125°C

MBRD620CT, NRVBD620VCT, SBRV620CT Series

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 4. Current Derating, Case, Per Leg

Figure 5. Current Derating, Ambient, Per Leg

Figure 6. Typical Capacitance, Per Leg

14080

TC, CASE TEMPERATURE (°C)

8.0

7.0

5.0

6.0

4.0

TA, AMBIENT TEMPERATURE (°C)

100 1600

2.0

1.0

0.5

600

VR, REVERSE VOLTAGE (VOLTS)

100

IF(AV) , AVERAGE FORWARD CURRENT (AMPS)

C, CAPACITANCE (pF)

3.0

2.0

1.0

11090 100 120 130 150 160

120 14020 40 60 80

1.5

2.5

3.0

10 20 30 40 50

3.5

4.0

IF(AV) , AVERAGE FORWARD CURRENT (AMPS)

1 K

TJ = 25°C

RATED VOLTAGE APPLIED

TJ = 150°C

RqJC = 6°C/W

SINE

WAVE

SQUARE

WAVE

TJ = 150°C

VR = 25 V

RqJA = 80°C/W

SURFACE MOUNTED ON MIN.

PAD SIZE RECOMMENDED

SQUARE WAVE

SINE WAVE

VR = 60 V

MBRD620CT, NRVBD620VCT, SBRV620CT Series

www.onsemi.com

ORDERING INFORMATION

Device Package Shipping†

MBRD620CTT4G

DPAK

(Pb−Free)

2500 / Tape & Reel

MBRD630CTT4G 2500 / Tape & Reel

MBRD640CTG 75 Units / Rail

NRVBD640CTG* 75 Units / Rail

NRVBD640CTG−VF01* 75 Units / Rail

MBRD640CTT4G 2500 / Tape & Reel

NRVBD640CTT4G* 2500 / Tape & Reel

NRVBD640VCTT4G* 2500 / Tape & Reel

SBRV640VCTT4G* 2500 / Tape & Reel

MBRD650CTG 75 Units / Rail

MBRD650CTT4G 2500 / Tape & Reel

NRVBD650CTG−VF01* 2500 / Tape & Reel

NRVBD650CTT4G* 2500 / Tape & Reel

NRVBD650CTT4G−VF01* 2500 / Tape & Reel

MBRD660CTG 75 Units / Rail

NRVBD660CTG* 75 Units / Rail

NRVBD660CTG−VF01* 75 Units / Rail

MBRD660CTRLG 1800 / Tape & Reel

NRVBD660CTRLG* 1800 / Tape & Reel

MBRD660CTT4G 2500 / Tape & Reel

NRVBD660CTT4G* 2500 / Tape & Reel

SBRV660VCTT4G* 2500 / Tape & Reel

SNRVBD660CTT4G* 2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*NRVBD and SBRV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable.

MBRD620CT, NRVBD620VCT, SBRV620CT Series

www.onsemi.com

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)

CASE 369C

ISSUE F

5.80

0.228

2.58

0.102

1.60

0.063

6.20

0.244

3.00

0.118

6.17

0.243

ǒmm

inchesǓ

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

0.005 (0.13) C

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.235 0.245 5.97 6.22

E0.250 0.265 6.35 6.73

A0.086 0.094 2.18 2.38

b0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61

b2 0.028 0.045 0.72 1.14

c0.018 0.024 0.46 0.61

e0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 −−− 0.040 −−− 1.01

L0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-

MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

7. OPTIONAL MOLD FEATURE.

12 3

H0.370 0.410 9.40 10.41

A1 0.000 0.005 0.00 0.13

L1 0.114 REF 2.90 REF

L2 0.020 BSC 0.51 BSC

HDETAIL A

SEATING

PLANE

L2 GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

BOTTOM VIEW

SIDE VIEW

TOP VIEW

ALTERNATE

CONSTRUCTIONS

NOTE 7

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

MBRD620CT/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative

◊