01/17/2011
IRL6372PbF
HEXFET® Power MOSFET
Notes through are on page 2
Features and Benefits
www.irf.com 1
Applications
• Battery operated DC motor inverter MOSFET
• System/Load Switch
• Charge and Discharge Switches for Battery Application
SO-8
6
*
6
*
'
'
'
'
V
DS
30 V
V
GS
±12 V
R
DS(on) max
(@V
GS
= 4.5V)
17.9 mΩ
Q
g (typical)
11 nC
I
D
(@T
A
= 25°C)
8.1 A
Features Resulting Benefits
Industry-Standard SO-8 Packa
g
e Multi-Vendor Compatibility
RoHS Compliant Containing no Lead, no Bromide and no Halogen
⇒
Environmentally Friendlier
MSL1, Consumer Qualification Increased Reliability
Absolute Maximum Ratin
g
s
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 4.5V
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 4.5V
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C Power Dissipation
e
P
D
@T
A
= 70°C Power Dissipation
e
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
-55 to + 150
2.0
0.02
1.3
Max.
8.1
6.5
65
±12
30 V
A
W
°C
Note
Form Quantit
y
IRL6372PBF SO-8 Tube/Bulk 95
IRL6372TRPBF SO-8 Ta
p
e and Reel 4000
Orderable part number Package Type Standard Pack
PD - 97622
IRL6372PbF
2www.irf.com
S
D
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 ich square copper board.
Rθ is measured at TJ of approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 23 ––– mV/°C
RDS(on) ––– 14.0 17.9
––– 17.0 23.0
VGS(th) Gate Threshold Voltage 0.5 ––– 1.1 V VDS = VGS, ID = 10µA
∆VGS(th) Gate Threshold Voltage Coefficient ––– -4.0 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
IGSS Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 30 ––– ––– S
QgTotal Gate Charge ––– 11 –––
Qgs1 Pre-Vth Gate-to-Source Charge ––– 0.01 –––
Qgs2 Post-Vth Gate-to-Source Charge ––– 0.50 –––
Qgd Gate-to-Drain Charge ––– 4.8 –––
Qgodr Gate Charge Overdrive ––– 5.69 –––
Qsw Switch Charge (Qgs2 + Qgd)––– 5.3 –––
RGGate Resistance ––– 2.2 ––– Ω
td(on) Turn-On Delay Time ––– 5.9 –––
trRise Time –––13–––
td(off) Turn-Off Delay Time ––– 34 –––
tfFall Time ––– 15 –––
Ciss Input Capacitance ––– 1020 –––
Coss Output Capacitance ––– 98 –––
Crss Reverse Transfer Capacitance ––– 68 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
ISContinuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.2 V
trr Reverse Recovery Time ––– 13 20 ns
Qrr Reverse Recovery Charge ––– 5.3 8.0 nC
Thermal Resistance
Parameter Units
RθJL Junction-to-Drain Lead
f
RθJA Junction-to-Ambient
e
nC
VGS = 4.5V
VDS = 15V
ID = 6.5A
Conditions
See Figs. 18
ƒ = 1.0MHz
VGS = 0V
VDS = 25V
VDS = 24V, VGS = 0V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 8.1A
d
VGS = 2.5V, ID = 6.5A
d
mΩ
µA
TJ = 25°C, IF = 6.5A, VDD = 24V
di/dt = 100/µs
d
TJ = 25°C, IS = 6.5A, VGS = 0V
d
showing the
integral reverse
p-n junction diode.
MOSFET symbol
RG = 6.8Ω
VDS = 10V, ID = 6.5A
VDS = 24V, VGS = 0V, TJ = 125°C
VDD = 15V, VGS = 4.5V
e
ID = 6.5A
VGS = 12V
VGS = -12V
ns
pF
Static Drain-to-Source On-Resistance
A
––– –––
––– –––
2.0
65
nA
°C/W
Max.
20
62.5
Typ.
–––
–––
IRL6372PbF
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Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID, Drain-to-Source Current (A)
VGS
TOP 10V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
BOTTOM 1.3V
≤60µs PULSE WIDTH
Tj = 25°C
1.3V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
1.3V
≤60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
4.5V
3.5V
2.5V
2.0V
1.8V
1.5V
BOTTOM 1.3V
1.0 1.5 2.0 2.5 3.0 3.5
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
VDS = 15V
≤60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 8.1A
VGS = 4.5V
110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 5 10 15 20 25 30
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 24V
VDS= 15V
VDS= 6.0V
ID= 6.5A
IRL6372PbF
4www.irf.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current vs.
Case (Bottom) Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 10. Threshold Voltage vs. Temperature
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
1.0
10
100
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 150°C
VGS = 0V
25 50 75 100 125 150
TC , Case Temperature (°C)
0
1
2
3
4
5
6
7
8
9
ID, Drain Current (A)
1E-006 1E-005 0.0001 0.001 0.01 0.1 110 100
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
Thermal Response ( Z thJA ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
0.1 1.0 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
TA = 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
DC
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VGS(th), Gate threshold Voltage (V)
ID = 10µA
ID = 250µA
ID = 1.0mA
IRL6372PbF
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Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 15. Typical Power vs. Time
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
12345678910 11 12
VGS, Gate -to -Source Voltage (V)
5
10
15
20
25
30
35
40
RDS(on), Drain-to -Source On Resistance (mΩ)
ID = 8.1A
TJ = 25°C
TJ = 125°C
010 20 30 40 50 60
ID, Drain Current (A)
10
20
30
40
50
60
70
RDS(on), Drain-to -Source On Resistance (mΩ)
Vgs = 2.5V
Vgs = 4.5V
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 1.2A
1.8A
BOTTOM 6.5A
1E-8 1E-7 1E-6 1E-5 1E-4 1E-3
Time (sec)
0
5000
10000
15000
20000
25000
Power (W)
IRL6372PbF
6www.irf.com
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 19a. Switching Time Test Circuit Fig 19b. Switching Time Waveforms
VGS
VDS
90%
10%
td(on) td(off)
trtf
Fig 17a. Gate Charge Test Circuit Fig 17b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
1K
VCC
DUT
0
L
S
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
RD
VGS
RG
D.U.T.
10V
+
-
VDD
VGS
IRL6372PbF
www.irf.com 7
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
SO-8 Package Outline (Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
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IRL6372PbF
8www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/2011
Data and specifications subject to change without notice.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
 Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
 Applicable version of JEDEC standard at the time of product release.
MS L 1
(per JEDE C J-S T D-020D
†††
)
RoHS compliant Yes
SO-8
Qualification information
†
Moisture Sensitivity Level
Qualification level Cons umer
††
(per JEDEC JES D47F
†††
guidelines )