R09DS0034EJ0300 Rev. 3.00 Page 1 of 12
Jun 20, 2012
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Data Sheet
NESG2021M05
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
Flat-Lead 4-Pin Thin-Type Super Minimold (M05)
FEATURES
• This device is an ideal choice for low noise, high-gain at low current amplifications.
⎯ NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
⎯ NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 22.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• Flat-lead 4-pin thin-type super minimold (M05) package
ORDERING INFORMATION
Part Number Order Number Package Quantity Supplying Form
NESG2021M05 NESG2021M05-A 50 pcs
(Non reel)
NESG2021M05-T1 NESG2021M05-T1-A
Flat-lead 4-pin thin-
type supper minimold
(M05, 2012 PKG)
(Pb-Free) 3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (Collector), Pin 4
(Emitter) face the perforation
side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 13.0 V
Collector to Emitter Voltage VCEO 5.0 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation Ptot Note 175 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0034EJ0300
Rev. 3.00
Jun 20, 2012
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NESG2021M05
R09DS0034EJ0300 Rev. 3.00 Page 2 of 12
Jun 20, 2012
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
DC Characteristics
Collector Cut-off Current ICBO V
CB = 5 V, IE = 0 − − 100 nA
Emitter Cut-off Current IEBO V
EB = 1 V, IC = 0 − − 100 nA
DC Current Gain hFE Note 1 V
CE = 2 V, IC = 5 mA 130 190 260 −
RF Characteristics
Gain Bandwidth Product fT V
CE = 3 V, IC = 10 mA, f = 2 GHz 20 25 − GHz
Insertion Power Gain ⏐S21e⏐2 V
CE = 3 V, IC = 10 mA, f = 2 GHz 17.0 19.0 − dB
Noise Figure (1) NF VCE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt − 0.9 1.2 dB
Noise Figure (2) NF VCE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt − 1.3 − dB
Associated Gain (1) Ga V
CE = 2 V, IC = 3 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt 15.0 18.0 − dB
Associated Gain (2) Ga V
CE = 2 V, IC = 3 mA, f = 5.2 GHz,
ZS = ZSopt, ZL = ZLopt − 10.0 − dB
Reverse Transfer Capacitance Cre Note 2 V
CB = 2 V, IE = 0, f = 1 MHz − 0.1 0.2 pF
Maximum Stable Power Gain MSG Note 3 V
CE = 3 V, IC = 10 mA, f = 2 GHz 20.0 22.5 − dB
Gain 1 dB Compression Output
Power PO (1 dB) V
CE = 3 V, IC = 12 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt − 9.0 − dBm
3rd Order Intermodulation
Distortion Output Intercept
Point
OIP3 V
CE = 3 V, IC = 12 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt − 17.0 − dBm
Notes: 1. Pulse measurement: PW ≤ 350
μ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
hFE CLASSIFICATION
Rank FB/YFB
Marking T1G
hFE Value 130 to 260
S21
S12
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NESG2021M05
R09DS0034EJ0300 Rev. 3.00 Page 3 of 12
Jun 20, 2012
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
f = 1 MHz
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.3
0.2
0.1
0246810
V
CE
= 1 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 3 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
20
25
30
15
5
10
01234
56
I
B
= 20 A
μ
120 A
μ
200 A
μ
140 A
μ
160 A
μ
180 A
μ
80 A
μ
60 A
μ
40 A
μ
100 A
μ
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
250
200
150
175
100
50
025 50 75 100 125 150
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Remark The graph indicates nominal characteristics.
NESG2021M05
R09DS0034EJ0300 Rev. 3.00 Page 4 of 12
Jun 20, 2012
1 000
100
10 10.1 10 100
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 1 V
1 000
100
10 10.1 10 100
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 3 V
1 000
100
10 10.1 10 100
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 2 V
Remark The graph indicates nominal characteristics.
NESG2021M05
R09DS0034EJ0300 Rev. 3.00 Page 5 of 12
Jun 20, 2012
V
CE
= 1 V
f = 2 GHz
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
5
10
15
20
25
0101 100
V
CE
= 3 V
f = 2 GHz
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
5
10
15
20
25
0101 100
V
CE
= 2 V
f = 2 GHz
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
30
5
10
15
20
25
0101 100
V
CE
= 1 V
I
C
= 10 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
30
25
20
15
10
5
0
0.1 1 10 100
MAG
MSG
|S
21e
|
2
V
CE
= 3 V
I
C
= 10 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
30
25
20
15
10
5
0
0.1 1 10 100
MAG
MSG
|S
21e
|
2
V
CE
= 2 V
I
C
= 10 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
40
35
30
25
20
15
10
5
0
0.1 1 10 100
MAG
MSG
|S
21e
|
2
Remark The graph indicates nominal characteristics.
NESG2021M05
R09DS0034EJ0300 Rev. 3.00 Page 6 of 12
Jun 20, 2012
V
CE
= 1 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 1 V
f = 3 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 2 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 1 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 1 V
f = 5 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
25
20
15
10
5
0
–51 10 100
|S
21e
|
2
MAG
V
CE
= 2 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
Remark The graph indicates nominal characteristics.
NESG2021M05
R09DS0034EJ0300 Rev. 3.00 Page 7 of 12
Jun 20, 2012
V
CE
= 2 V
f = 3 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 3 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 3 V
f = 3 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 3 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
30
25
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 3 V
f = 5 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
30
25
20
15
10
5
01 10 100
|S
21e
|
2
MAG
V
CE
= 2 V
f = 5 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
30
25
20
15
10
5
01 10 100
|S
21e
|
2
MAG
Remark The graph indicates nominal characteristics.
NESG2021M05
R09DS0034EJ0300 Rev. 3.00 Page 8 of 12
Jun 20, 2012
VCE = 3 V, f = 1 GHz
Icq = 12 mA (RF OFF)
20
15
10
5
0
–5
50
40
10
20
30
0
–25 –15 –10 –5–20 0
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Output Power Pout (dBm)
Collector Current IC (mA)
Pout
IC
VCE = 3 V, f = 3 GHz
Icq = 12 mA (RF OFF)
20
15
10
5
0
–5
50
40
10
20
30
0
–25 –15 –10 –5–20 0
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Output Power Pout (dBm)
Collector Current IC (mA)
Pout
IC
VCE = 3 V, f = 2 GHz
Icq = 12 mA (RF OFF)
20
15
10
5
0
–5
50
40
10
20
30
0
–20 –10 –5 0–15 5
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Output Power Pout (dBm)
Collector Current IC (mA)
Pout
IC
VCE = 3 V, f = 5.2 GHz
Icq = 12 mA (RF OFF)
20
15
10
5
0
–5
50
40
10
20
30
0
–20 –10 –5 0–15 5
Input Power Pin (dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Output Power Pout (dBm)
Collector Current IC (mA)
Pout
IC
Remark The graph indicates nominal characteristics.
NESG2021M05
R09DS0034EJ0300 Rev. 3.00 Page 9 of 12
Jun 20, 2012
6
5
3
2
1
4
0
30
5
10
15
20
25
0
1 10 100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 1 V
f = 1 GHz Ga
NF
6
5
3
2
1
4
0
30
5
10
15
20
25
0
1 10 100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 2 V
f = 1 GHz Ga
NF
6
5
3
2
1
4
0
30
5
10
15
20
25
0
1 10 100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 1 V
f = 2 GHz
Ga
NF
6
5
3
2
1
4
0
30
5
10
15
20
25
0
1 10 100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 2 V
f = 2 GHz
Ga
NF
14
12
10
8
6
4
2
0
14
6
2
4
8
10
12
0
1 10 100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 1 V
f = 5.2 GHz
Ga
NF
14
4
6
8
10
12
2
0
14
4
2
10
8
6
12
0
1 10 100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 2 V
f = 5.2 GHz
Ga
NF
Remark The graph indicates nominal characteristics.
NESG2021M05
R09DS0034EJ0300 Rev. 3.00 Page 10 of 12
Jun 20, 2012
6
5
3
2
1
4
0
30
5
10
15
20
25
0
1 10 100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 3 V
f = 1 GHz
Ga
NF
6
5
3
2
1
4
0
30
5
10
15
20
25
0
1 10 100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 3 V
f = 2 GHz
Ga
NF
14
12
10
8
6
4
2
0
14
6
2
4
8
10
12
0
1 10 100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain Ga (dB)
VCE = 3 V
f = 5.2 GHz
Ga
NF
Remark The graphs indicate nominal characteristics.
NESG2021M05
R09DS0034EJ0300 Rev. 3.00 Page 11 of 12
Jun 20, 2012
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
<R>
NESG2021M05
R09DS0034EJ0300 Rev. 3.00 Page 12 of 12
Jun 20, 2012
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) (UNIT: mm)
0.59±0.05
0.11
+0.1
–0.05
(Bottom View)
(0.65)0.65
1.30
2.0±0.1
43
12
1.25±0.1
2.05±0.1
0.30
+0.1
–0.05
(Top View)
Remark
( )
:
Reference value
0.5
(1.05)
T1G
PIN CONNENTION
1. Base
2. Emitter
3. Collector
4. Emitter
<R>
All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History NESG2021M05 Data Sheet
Description
Rev. Date Page Summary
− Mar 2003 − Previous No. : PU10188EJ02V0DS
p.1 Modification of ORDERING INFORMATION
p.2 Modification of ELECTRICAL CHARACTERISTICS
Modification of hFE CLASSIFICATION
p.11 Modification of S-PARAMETERS
3.00 Jun 20, 2012
p.12 Modification of PACKAGE DIMENSIONS
Notice
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development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
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R
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2880 Scott Boulevard Santa Clara
,
CA 95050-2554
,
U.S.A
.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Mala
y
sia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petalin
g
Jaya, Selan
g
or Darul Ehsan, Malaysi
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Tel: +60-3-7955-9390
,
Fax: +60-3-7955-951
0
Renesas Electronics Korea Co.
,
Ltd
.
11F., Samik Lavied' or Bld
., 720-2 Yeoksam-Don
, Kan
nam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737
,
Fax: +82-2-558-514
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