S-8242B Series BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK www.ablicinc.com N Rev.2.3_02 DE SI G (c) ABLIC Inc., 2006-2013 The S-8242B Series are protection ICs for 2-serial-cell lithium-ion/lithium polymer rechargeable batteries and include highaccuracy voltage detectors and delay circuits. These ICs are suitable for protecting 2-cell lithium-ion / lithium polymer rechargeable battery packs from overcharge, overdischarge, and overcurrent. Features High-accuracy voltage detection for each cell Overcharge detection voltage n (n 1, 2) 3.9 V to 4.5 V (50 mV steps) Accuracy 25 mV *1 Accuracy 50 mV Overcharge release voltage n (n 1, 2) 3.8 V to 4.5 V Overdischarge detection voltage n (n 1, 2) 2.0 V to 3.0 V (100 mV steps) Accuracy 50 mV *2 Accuracy 100 mV Overdischarge release voltage n (n 1, 2) 2.0 V to 3.4 V Two-level overcurrent detection (overcurrent 1, overcurrent 2) Overcurrent detection voltage 1 0.05 V, 0.08 V to 0.30 V (10 mV steps) Accuracy 15 mV Overcurrent detection voltage 2 1.2 V (fixed) Accuracy 300 mV Delay times (overcharge, overdischarge, overcurrent) are generated by an internal circuit (external capacitors are unnecessary). 0 V battery charge function available/unavailable are selectable. Charger detection function The overdischarge hysteresis is released by detecting negative voltage at the VM pin (0.7 V typ.) (Charger detection function). High-withstand voltage devices Absolute maximum rating: 28 V Wide operating temperature range 40C to 85C Low current consumption Operation mode 10 A max. (25C) Power-down mode 0.1 A max. (25C) Lead-free, Sn 100%, halogen-free*3 (6) (7) (8) (9) R FO D (4) (5) DE (3) MM EN (2) NE W (1) Overcharge release voltage Overcharge detection voltage Overcharge hysteresis voltage (Overcharge hysteresis voltage n (n 1, 2) can be selected as 0 V or from a range of 0.1 V to 0.4 V in 50 mV steps.) *2. Overdischarge release voltage Overdischarge detection voltage Overdischarge hysteresis voltage (Overdischarge hysteresis voltage n (n 1, 2) can be selected as 0 V or from a range of 0.1 V to 0.7 V in 100 mV steps.) *3. Refer to " Product Name Structure" for details. RE Applications CO *1. Lithium-ion rechargeable battery packs Lithium polymer rechargeable battery packs NO T Packages SNT-8A 8-Pin TSSOP 1 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 Delay circuit, controller, 0 V battery charge/ charge inhibition circuit DO DE SI G N Block Diagram VDD CO NE W FO R 300 k D MM EN 10 k Charger detector DE VM NO T RE CO Remark All the diodes in the figure are parasitic diodes. 2 Figure 1 VC VSS BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 Product Name Structure 1. Product Name x N xx - xxxx DE SI G S-8242B Environmental code U: Lead-free (Sn 100%), halogen-free S: Lead-free, halogen-free G: Lead-free (for details, please contact our sales office) NE Serial code Sequentially set from AA to ZZ *1 W Package name (abbreviation) and IC packing specifications I8T1 : SNT-8A, Tape T8T1: 8-Pin TSSOP, Tape R *1. Refer to the tape specifications. SNT-8A Environmental code = G, S Environmental code = U Drawing Code Tape Reel PH008-A-C-SD PH008-A-R-SD FT008-E-C-SD FT008-E-R-SD FT008-E-C-SD FT008-E-R-S1 Land PH008-A-L-SD NO T RE CO MM EN DE 8-Pin TSSOP Package PH008-A-P-SD FT008-A-P-SD FT008-A-P-SD D Package Name FO 2. Package 3 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 3. Product Name List (1) SNT-8A Package N Table 1 NO T RE CO MM EN DE D FO R NE W DE SI G Overcharge Overcharge Overdischarge Overdischarge Overcurrent Detection Release Detection Release Detection 0 V Battery Product Name Voltage Voltage Voltage Voltage Voltage 1 Charge [VCU] [VCL] [VDL] [VDU] [VIOV1] S-8242BAB-I8T1x 4.325 V 4.075 V 2.2 V 2.9 V 0.21 V Unavailable S-8242BAC-I8T1x 4.350 V 4.150 V 2.3 V 3.0 V 0.30 V Available S-8242BAD-I8T1x 4.350 V 4.350 V 2.3 V 2.9 V 0.08 V Available S-8242BAE-I8T1x 4.430 V 4.200 V 2.3 V 2.9 V 0.08 V Available S-8242BAF-I8T1x 4.300 V 4.100 V 2.0 V 2.0 V 0.20 V Available S-8242BAG-I8T1x 4.300 V 4.100 V 2.0 V 2.0 V 0.16 V Available S-8242BAH-I8T1x 4.300 V 4.100 V 2.4 V 3.0 V 0.20 V Unavailable S-8242BAI-I8T1x 4.250 V 4.050 V 2.4 V 3.0 V 0.15 V Available S-8242BAM-I8T1x 4.300 V 4.100 V 2.6 V 3.0 V 0.28 V Unavailable S-8242BAN-I8T1x 4.350 V 4.150 V 2.3 V 2.9 V 0.25 V Unavailable S-8242BAO-I8T1x 4.350 V 4.150 V 2.3 V 2.9 V 0.10 V Available S-8242BAQ-I8T1x 4.350 V 4.150 V 2.3 V 2.9 V 0.20 V Unavailable S-8242BAR-I8T1x 4.300 V 4.100 V 2.6 V 3.0 V 0.21 V Unavailable S-8242BAU-I8T1x 4.300 V 4.100 V 2.4 V 3.0 V 0.28 V Unavailable S-8242BAV-I8T1x 4.350 V 4.150 V 2.2 V 2.9 V 0.20 V Unavailable S-8242BAW-I8T1x 4.350 V 4.150 V 2.2 V 2.9 V 0.25 V Unavailable S-8242BAX-I8T1x 4.300 V 4.100 V 2.4 V 3.0 V 0.21 V Unavailable S-8242BAY-I8T1x 4.210 V 4.210 V 2.0 V 2.0 V 0.20 V Unavailable S-8242BAZ-I8T1x 4.190 V 4.190 V 2.3 V 2.9 V 0.10 V Available S-8242BBA-I8T1x 4.350 V 4.150 V 3.0 V 3.4 V 0.25 V Unavailable S-8242BBB-I8T1x 4.270 V 4.070 V 2.3 V 2.3 V 0.20 V Available S-8242BBC-I8T1x 4.250 V 4.050 V 2.4 V 3.0 V 0.10 V Available S-8242BBD-I8T1x 4.310 V 4.110 V 2.0 V 2.0 V 0.20 V Available S-8242BBF-I8T1x 4.350 V 4.150 V 2.0 V 2.4 V 0.25 V Unavailable S-8242BBH-I8T1x 4.400 V 4.200 V 2.0 V 2.7 V 0.25 V Available S-8242BBI-I8T1x 4.300 V 4.150 V 3.175 V 3.275 V 0.15 V Unavailable S-8242BBJ-I8T1x 4.275 V 4.275 V 2.4 V 2.6 V 0.10 V Unavailable S-8242BBK-I8T1x 4.250 V 4.050 V 2.8 V 3.0 V 0.12 V Unavailable S-8242BBQ-I8T1x 4.150 V 4.050 V 2.35 V 2.65 V 0.10 V Available S-8242BBR-I8T1x 4.275 V 3.925 V 2.8 V 3.3 V 0.05 V Unavailable S-8242BBW-I8T1x 4.250 V 4.050 V 2.4 V 3.0 V 0.15 V Unavailable S-8242BBZ-I8T1U 4.200 V 4.100 V 2.7 V 3.0 V 0.10 V Available Remark 1. Please contact our sales office for the products with detection voltage value other than those specified above. 2. x: G or U 3. Please select products of environmental code = U for Sn 100%, halogen-free products. 4 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 (2) 8-Pin TSSOP Package Table 2 NO T RE CO MM EN DE D FO R NE W DE SI G N Overcharge Overcharge Overdischarge Overdischarge Overcurrent Detection Release Detection Release Detection 0 V Battery Product Name Voltage Voltage Voltage Voltage Voltage 1 Charge [VCU] [VCL] [VDL] [VDU] [VIOV1] S-8242BAC-T8T1x 4.350 V 4.150 V 2.3 V 3.0 V 0.30 V Available S-8242BAD-T8T1U 4.350 V 4.350 V 2.3 V 2.9 V 0.08 V Available S-8242BAH-T8T1x 4.300 V 4.100 V 2.4 V 3.0 V 0.20 V Unavailable S-8242BAI-T8T1x 4.250 V 4.050 V 2.4 V 3.0 V 0.15 V Available S-8242BAP-T8T1x 4.100 V 3.800 V 2.2 V 2.4 V 0.30 V Unavailable S-8242BAR-T8T1x 4.300 V 4.100 V 2.6 V 3.0 V 0.21 V Unavailable S-8242BAU-T8T1x 4.300 V 4.100 V 2.4 V 3.0 V 0.28 V Unavailable S-8242BAV-T8T1x 4.350 V 4.150 V 2.2 V 2.9 V 0.20 V Unavailable S-8242BAW-T8T1x 4.350 V 4.150 V 2.2 V 2.9 V 0.25 V Unavailable S-8242BAX-T8T1x 4.300 V 4.100 V 2.4 V 3.0 V 0.21 V Unavailable S-8242BBD-T8T1U 4.310 V 4.110 V 2.0 V 2.0 V 0.20 V Available S-8242BBE-T8T1x 4.350 V 4.150 V 2.0 V 2.4 V 0.20 V Unavailable S-8242BBF-T8T1x 4.350 V 4.150 V 2.0 V 2.4 V 0.25 V Unavailable S-8242BBG-T8T1x 4.200 V 4.000 V 2.6 V 3.0 V 0.10 V Available S-8242BBL-T8T1y 4.200 V 4.000 V 2.0 V 2.7 V 0.37 V Unavailable S-8242BBM-T8T1x 4.150 V 4.050 V 2.5 V 3.0 V 0.20 V Unavailable S-8242BBO-T8T1y 4.300 V 4.100 V 2.2 V 2.9 V 0.08 V Unavailable S-8242BBP-T8T1y 4.300 V 4.100 V 2.2 V 2.9 V 0.10 V Unavailable S-8242BBS-T8T1y 4.300 V 4.100 V 2.4 V 3.0 V 0.18 V Unavailable S-8242BBU-T8T1y 4.200 V 4.000 V 2.6 V 3.0 V 0.30 V Unavailable S-8242BBV-T8T1y 4.250 V 4.050 V 2.2 V 2.6 V 0.30 V Unavailable S-8242BBX-T8T1y 4.250 V 4.150 V 2.5 V 3.0 V 0.10 V Available S-8242BCA-T8T1U 4.150 V 3.950 V 2.2 V 2.6 V 0.30 V Unavailable S-8242BCB-T8T1U 4.250 V 4.100 V 3.0 V 3.0 V 0.20 V Available S-8242BCC-T8T1U 4.400 V 4.100 V 2.4 V 3.0 V 0.28 V Unavailable S-8242BCD-T8T1U 4.450 V 4.150 V 2.0 V 2.4 V 0.25 V Unavailable S-8242BCE-T8T1U 4.450 V 4.250 V 2.3 V 2.7 V 0.28 V Unavailable S-8242BCF-T8T1U 4.500 V 4.300 V 2.2 V 2.4 V 0.25 V Unavailable S-8242BCG-T8T1U 4.450 V 4.350 V 2.3 V 2.7 V 0.28 V Unavailable S-8242BCH-T8T1U 4.500 V 4.400 V 2.2 V 2.4 V 0.25 V Unavailable Remark 1. Please contact our sales office for the products with detection voltage value other than those specified above. 2. x: G or U 3. y: S or U 4. Please select products of environmental code = U for Sn 100%, halogen-free products. 5 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 Pin Configurations Table 3 Pin No. 8 2 7 3 6 4 5 Description Connection of charge control FET gate (CMOS output) Connection of discharge control FET gate 2 DO (CMOS output) NC*1 3 No connection Connection for negative power supply input 4 VSS and negative voltage of battery 2 Connection for negative voltage of battery 1 5 VC and positive voltage of battery 2 Connection for positive power supply input 6 VDD and positive voltage of battery 1 NC*1 7 No connection Voltage detection between VM and VSS 8 VM (overcurrent/charger detection pin) *1. The NC pin is electrically open. The NC pin can be connected to VDD or VSS. 1 FO R NE W Figure 2 CO DE SI G 1 Symbol N SNT-8A Top view 8-Pin TSSOP Top view NO T RE CO Figure 3 6 Description Connection of charge control FET gate (CMOS output) Connection of discharge control FET gate 2 DO (CMOS output) NC*1 3 No connection Connection for negative power supply input 4 VSS and negative voltage of battery 2 Connection for negative voltage of battery 1 5 VC and positive voltage of battery 2 Connection for positive power supply input 6 VDD and positive voltage of battery 1 NC*1 7 No connection Voltage detection between VM and VSS 8 VM (overcurrent/charger detection pin) *1. The NC pin is electrically open. The NC pin can be connected to VDD or VSS. 1 CO MM EN 8 7 6 5 Symbol Table 4 DE 1 2 3 4 Pin No. D Remark For the external views, refer to the package drawings. Remark For the external views, refer to the package drawings. BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 Absolute Maximum Ratings Table 5 Applied pin Absolute Maximum Ratings DE SI G Symbol N (Ta 25C unless otherwise specified) Item Unit VDS VDD VSS0.3 to VSS12 V VC input pin voltage VVC VC VSS0.3 to VDD0.3 V VM pin input voltage VVM VM VDD28 to VDD0.3 V DO pin output voltage VDO DO VSS0.3 to VDD0.3 V CO pin output voltage VCO CO VVM0.3 to VDD0.3 *1 450 700*1 40 to 85 V mW mW C 55 to 125 C PD Topr Storage temperature Tstg NE SNT-8A Power dissipation 8-Pin TSSOP Operating ambient temperature R *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm x 76.2 mm x t1.6 mm (2) Board name: JEDEC STANDARD51-7 The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. FO Caution W Input voltage between VDD and VSS D 400 DE 600 8-Pin TSSOP MM EN Power Dissipation (PD) [mW] 800 200 CO 0 SNT-8A 0 100 150 50 Ambient Temperature (Ta) [C] NO T RE Figure 4 Power Dissipation of Package (When mounted on board) 7 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 Electrical Characteristics Table 6 Symbol Condition Min. Typ. [DETECTION VOLTAGE] 3.90 V to 4.50 V, Adjustable Overcharge release voltage n VCLn 3.80 V to 4.50 V, Adjustable Overdischarge detection voltage n VDLn 2.0 V to 3.0 V, Adjustable Overdischarge release voltage n VDUn 2.0 V to 3.40 V, Adjustable Overcurrent detection voltage 1 VIOV1 0.05 V to 0.30 V, Adjustable VCUn -0.025 VCLn -0.05 VDLn -0.05 VDUn -0.10 VIOV1 -0.015 0.9 -1.0 -1.0 -0.5 Unit Test Test condition circuit VCUn +0.025 VCLn +0.05 VDLn +0.05 VDUn +0.10 VIOV1 +0.015 1.5 -0.4 1.0 0.5 V 1 1 V 1 1 V 2 2 W VCUn V 2 2 VIOV1 V 3 2 VCUn VCLn VDLn VDUn NE Overcharge detection voltage n Max. DE SI G Item N (Ta 25C unless otherwise specified) NO T RE CO MM EN DE D FO R Overcurrent detection voltage 2 VIOV2 1.2 V 3 2 Charger detection voltage VCHA -0.7 V 4 2 *3 Temperature coefficient 1*1 0 mV/C TCOE1 Ta = 0C to 50C *3 *2 Temperature coefficient 2 0 mV/C TCOE2 Ta = 0C to 50C [DELAY TIME] Overcharge detection delay time tCU 0.92 1.15 1.38 s 9 2 Overdischarge detection delay time tDL 115 144 173 ms 9 2 Overcurrent detection delay time 1 tIOV1 7.2 9 11 ms 10 2 Overcurrent detection delay time 2 tIOV2 FET gate capacitance 2000 pF 220 300 380 s 10 2 [0 V BATTERY CHARGE FUNCTION] 0 V charge starting charger voltage V0CHA 0 V charge available 1.2 V 11 2 0 V battery charge inhibition battery voltage V0INH 0 V charge unavailable 0.5 V 12 2 [INTERNAL RESISTANCE] Resistance between VM and VDD RVMD V1 = V2 = 1.5 V, VVM = 0 V 100 300 900 k 6 3 Resistance between VM and VSS RVMS V1 = V2 = 3.5 V, VVM = 1.0 V 5 10 20 k 6 3 [INPUT VOLTAGE] Operating voltage between VDD and VSS VDSOP1 Internal circuit operating voltage 1.5 10 V Operating voltage between VDD and VM VDSOP2 Internal circuit operating voltage 1.5 28 V [INPUT CURRENT] Current consumption during operation IOPE V1 = V2 = 3.5 V, VVM = 0 V 5 10 A 5 3 Current consumption at power down IPDN V1 = V2 = 1.5 V, VVM = 3.0 V 0.1 A 5 3 VC pin current IVC V1 = V2 = 3.5 V, VVM = 0 V -0.3 0 0.3 A 5 3 [OUTPUT RESISTANCE] CO pin H resistance RCOH VCO = VDD-0.5 V 2 4 8 k 7 4 CO pin L resistance RCOL VCO = VVM+0.5 V 2 4 8 k 7 4 DO pin H resistance RDOH VDO = VDD-0.5 V 2 4 8 k 8 4 DO pin L resistance RDOL VDO = VSS +0.5 V 2 4 8 k 8 4 *1. Voltage temperature coefficient 1: Overcharge detection voltage *2. Voltage temperature coefficient 2: Overcurrent detection voltage 1 *3. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed by design, not tested in production. 8 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 Test Circuits DE SI G N Caution Unless otherwise specified, the output voltage levels "H" and "L" at CO pin (VCO) and DO pin (VDO) are judged by the threshold voltage (1.0 V) of the N-channel FET. Judge the CO pin level with respect to VVM and the DO pin level with respect to VSS. 1. Overcharge Detection Voltage, Overcharge Release Voltage (Test Condition 1, Test Circuit 1) R NE W Overcharge detection voltage 1 (VCU1) is defined as the voltage between the VDD pin and VC pin at which VCO goes from "H" to "L" when the voltage V1 is gradually increased from the starting condition of V1 V2 VCU-0.05 V, V3 0 V. Overcharge release voltage 1 (VCL1) is defined as the voltage between the VDD and VC pins at which VCO goes from "L" to "H" when setting V2 3.5 V and the voltage V1 is then gradually decreased. Overcharge hysteresis voltage 1 (VHC1) is defined as the difference between overcharge detection voltage 1 (VCU1) and overcharge release voltage 1 (VCL1). Overcharge detection voltage 2 (VCU2) is defined as the voltage between the VC pin and VSS pin at which VCO goes from "H" to "L" when the voltage V2 is gradually increased from the starting condition of V1 V2 VCU-0.05 V, V3 0 V. Overcharge release voltage 2 (VCL2) is defined as the voltage between the VC and VSS pins at which VCO goes from "L" to "H" when setting V1 3.5 V and the voltage V2 is then gradually decreased. Overcharge hysteresis voltage 2 (VHC2) is defined as the difference between overcharge detection voltage 2 (VCU2) and overcharge release voltage 2 (VCL2). FO 2. Overdischarge Detection Voltage, Overdischarge Release Voltage (Test Condition 2, Test Circuit 2) MM EN DE D Overdischarge detection voltage 1 (VDL1) is defined as the voltage between the VDD pin and VC pin at which VDO goes from "H" to "L" when the voltage V1 is gradually decreased from the starting condition of V1 V2 3.5 V, V3 0 V. Overdischarge release voltage 1 (VDU1) is defined as the voltage between the VDD pin and VC pin at which VDO goes from "L" to "H" when setting V2 = 3.5 V and the voltage V1 is then gradually increased. Overdischarge hysteresis voltage 1 (VHD1) is defined as the difference between overdischarge release voltage 1 (VDU1) and overdischarge detection voltage 1 (VDL1). Overdischarge detection voltage 2 (VDL2) is defined as the voltage between the VC pin and VSS pin at which VDO goes from "H" to "L" when the voltage V2 is gradually decreased from the starting condition of V1 V2 3.5 V, V3 0 V. Overdischarge release voltage 2 (VDU2) is defined as the voltage between the VC pin and VSS pin at which VDO goes from "L" to "H" when setting V1 = 3.5 V and the voltage V2 is then gradually increased. Overdischarge hysteresis voltage 2 (VHD2) is defined as the difference between overdischarge release voltage 2 (VDU2) and overdischarge detection voltage 2 (VDL2). CO 3. Overcurrent Detection Voltage 1, Overcurrent Detection Voltage 2 (Test Condition 3, Test Circuit 2) RE Overcurrent detection voltage 1 (VIOV1) is defined as the voltage between the VM pin and VSS pin whose delay time for changing VDO from "H" to "L" lies between the minimum and the maximum value of overcurrent delay time 1 when the voltage V3 is increased rapidly within 10 s from the starting condition of V1 V2 3.5 V, V3 0 V. Overcurrent detection voltage 2 (VIOV2) is defined as the voltage between the VM pin and VSS pin whose delay time for changing VDO from "H" to "L" lies between the minimum and the maximum value of overcurrent delay time 2 when the voltage V3 is increased rapidly within 10 s from the starting condition of V1 V2 3.5 V, V3 0 V. NO T 4. Charger Detection Voltage (Test Condition 4, Test Circuit 2) The charger detection voltage (VCHA) is defined as the voltage between the VM pin and VSS pin at which VDO goes from "L" to "H" when the voltage V3 is gradually decreased from 0 V after the voltage V1 is gradually increased from the starting condition of V1 1.8 V, V2 3.5 V, V3 0 V until the voltage V1 becomes VDL1 (VHD1/2). The charger detection voltage can be measured only in a product whose overdischarge hysteresis VHD 0 V. 9 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 5. Operating Current Consumption, VC Pin Current, Power-down Current Consumption (Test Condition 5, Test Circuit 3) DE SI G N The operating current consumption (IOPE) is the current ISS that flows through the VSS pin and the VC pin current (IVC) is the current IC that flows through the VC pin under the set conditions of V1 V2 3.5 V and S1:OFF, S2:ON (normal status). The power-down current consumption (IPDN) is the current ISS that flows through the VSS pin under the set conditions of V1 V2 1.5 V and S1:ON, S2:OFF (overdischarge status). 6. Resistance between VM and VDD, Resistance between VM and VSS (Test Condition 6, Test Circuit 3) NE W The resistance between VM and VDD (RVMD) is the resistance between VM and VDD pins under the set conditions of V1 V2 1.5 V and S1:OFF, S2:ON. The resistance between VM and VSS (RVMS) is the resistance between VM and VSS pins under the set conditions of V1 V2 3.5 V and S1:ON, S2:OFF. 7. CO Pin H Resistance, CO Pin L Resistance (Test Condition 7, Test Circuit 4) R The CO pin H resistance (RCOH) is the resistance at the CO pin under the set conditions of V1 V2 3.5 V, V4 6.5 V. The CO pin L resistance (RCOL) is the resistance at the CO pin under the set conditions of V1 V2 4.5 V, V4 0.5 V. FO 8. DO Pin H Resistance, DO Pin L Resistance (Test Condition 8, Test Circuit 4) D The DO pin H resistance (RDOH) is the resistance at the DO pin under the set conditions of V1 V2 3.5 V, V5 6.5 V. The DO pin L resistance (RDOL) is the resistance at the DO pin under the set conditions of V1 V2 1.8 V, V5 0.5 V. DE 9. Overcharge Detection Delay Time, Overdischarge Detection Delay Time (Test Condition 9, Test Circuit 2) MM EN The overcharge detection delay time (tCU) is the time needed for VCO to change from "H" to "L" just after the voltage V1 momentarily increases within 10 s from overcharge detection voltage 1 (VCU1) 0.2 V to overcharge detection voltage 1 (VCU1) 0.2 V under the set conditions of V1 V2 3.5 V, V3 0 V. The overdischarge detection delay time (tDL) is the time needed for VDO to change from "H" to "L" just after the voltage V1 momentarily decreases within 10 s from overdischarge detection voltage 1 (VDL1) 0.2 V to overdischarge detection voltage 1 (VDL1) 0.2 V under the set condition of V1 V2 3.5 V, V3 0 V. 10. Overcurrent Detection Delay Time 1, Overcurrent Detection Delay Time 2 (Test Condition 10, Test Circuit 2) RE CO Overcurrent detection delay time 1 (tIOV1) is the time needed for VDO to go to "L" after the voltage V3 momentarily increases within 10 s from 0 V to VIOV1 0.1 V under the set conditions of V1 V2 3.5 V, V3 0 V. Overcurrent detection delay time 2 (tIOV2) is the time needed for VDO to go to "L" after the voltage V3 momentarily increases within 10 s from 0 V to 2.0 V under the set conditions of V1 V2 3.5 V, V3 0 V. 11. 0 V Charge Starting Charger Voltage (Products in Which 0 V Charge Is Available) (Test Condition 11, Test Circuit 2) NO T The 0 V charge starting charger voltage (V0CHA) is defined as the voltage between the VDD pin and VM pin at which VCO goes to "H" (VVM 0.1 V or higher) when the voltage V3 is gradually decreased from the starting condition of V1 V2 V3 0 V. 10 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 12. 0 V Charge Inhibition Battery Voltage (Products in Which 0 V Charge Is Unavailable) (Test Condition 12, Test Circuit 2) DE SI G N The 0 V charge inhibition charger voltage (V0INH) is defined as the voltage between the VDD pin and VSS pin at which VCO goes to "H" (VVM 0.1 V or higher) when the voltages V1 and V2 are gradually increased from the starting condition of V1 V2 0 V, V3 4 V. R1 = 100 VDD S-8242B Series CO VC VM V DO C1 = 1 F V2 VSS NE W V V3 V1 VM V DO A FO A VSS V1 V2 DE V3 VDD S-8242B Series CO VC D V R Figure 5 Test circuit 1 MM EN Figure 6 Test circuit 2 S1 A VM VDD S-8242B Series CO VC A DO VSS A A VM VDD S-8242B Series CO VC A A DO A CO S2 V2 Figure 7 Test circuit 3 RE NO T V1 V4 VSS V1 V2 V5 Figure 8 Test circuit 4 11 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 Operation N Remark Refer to " Battery Protection IC Connection Example". DE SI G 1. Normal Status This IC monitors the voltage of the battery connected between the VDD and VSS pins and the voltage difference between the VM and VSS pins to control charging and discharging. When the battery voltage is in the range from overdischarge detection voltage n (VDLn) to overcharge detection voltage n (VCUn), and the VM pin voltage is in the range from the charger detection voltage (VCHA) to overcurrent detection voltage 1 (VIOV1), the IC turns both the charging and discharging control FETs on. This condition is called the normal status, and in this condition charging and discharging can be carried out freely. W Caution When the battery is connected for the first time, discharging may not be enabled. In this case, NE Short the VM pin and VSS pin, or Set the VM pin's voltage at the level of the charger detection voltage (VCHA) or more and the overcurrent detection voltage 1 (VIOV1) or less by connecting the charger R The IC returns to the normal status. FO 2. Overcharge Status MM EN (2) When the battery voltage falls below overcharge release voltage n (VCLn), the S-8242B Series turns the charging control FET on and returns to the normal status. When a load is connected and discharging starts, the S-8242B Series turns the charging control FET on and returns to the normal status. Just after the load is connected and discharging starts, the discharging current flows through the parasitic diode in the charging control FET. At this moment the VM pin potential becomes Vf, the voltage for the parasitic diode, higher than the VSS level. When the battery voltage goes under overcharge detection voltage n (VCUn) and provided that the VM pin voltage is higher than overcurrent detection voltage 1, the S-8242B Series releases the overcharge condition. DE (1) D When the battery voltage becomes higher than overcharge detection voltage n (VCUn) during charging in the normal status and detection continues for the overcharge detection delay time (tCU) or longer, the S-8242B Series turns the charging control FET off to stop charging. This condition is called the overcharge status. The overcharge status is released in the following two cases ((1) and (2)). RE CO Caution 1. If the battery is charged to a voltage higher than overcharge detection voltage n (VCUn) and the battery voltage does not fall below overcharge detection voltage n (VCUn) even when a heavy load is connected, overcurrent 1 and overcurrent 2 do not function until the battery voltage falls below overcharge detection voltage n (VCUn). Since an actual battery has an internal impedance of tens of m, the battery voltage drops immediately after a heavy load that causes overcurrent is connected, and overcurrent 1 and overcurrent 2 function. NO T 2. When a charger is connected after overcharge detection, the overcharge status is not released even if the battery voltage is below overcharge release voltage n (VCLn). The overcharge status is released when the VM pin voltage goes over the charger detection voltage (VCHA) by removing the charger. 12 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 3. Overdischarge Status DE SI G N When the battery voltage falls below overdischarge detection voltage n (VDLn) during discharging in the normal status and detection continues for the overdischarge detection delay time (tDL) or longer, the S-8242B Series turns the discharging control FET off to stop discharging. This condition is called the overdischarge status. When the discharging control FET is turned off, the VM pin voltage is pulled up by the resistor between the VM and VDD pins in the IC (RVMD). When the voltage difference between the VM and VSS pins is 1.3 V (typ.) or higher, the current consumption is reduced to the power-down current consumption (IPDN). This condition is called the power-down status. The power-down status is released when a charger is connected and the voltage difference between the VM and VSS pins becomes 1.3 V (typ.) or lower. Moreover, when the battery voltage becomes overdischarge detection voltage n (VDLn) or higher, the S-8242B Series turns the discharging FET on and returns to the normal status. W 4. Charger Detection FO R NE When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is lower than the charger detection voltage (VCHA), the overdischarge hysteresis is released via the charge detection function; therefore, the S-8242B Series releases the overdischarge status and turns the discharging control FET on when the battery voltage becomes equal to or higher than overdischarge detection voltage n (VDLn) since the charger detection function works. This action is called charger detection. When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is not lower than the charger detection voltage (VCHA), the S-8242B Series releases the overdischarge status when the battery voltage reaches overdischarge release voltage n (VDUn) or higher. 5. Overcurrent Status The impedance that enables automatic restoration varies depending on the battery voltage and the set value of overcurrent detection voltage 1. NO T RE CO Caution MM EN DE D When a battery in the normal status is in the status where the voltage of the VM pin is equal to or higher than the overcurrent detection voltage because the discharge current is higher than the specified value and the status lasts for the overcurrent detection delay time, the discharge control FET is turned off and discharging is stopped. This status is called the overcurrent status. In the overcurrent status, the VM and VSS pins are shorted by the resistor between VM and VSS (RVMS) in the IC. However, the voltage of the VM pin is at the VDD potential due to the load as long as the load is connected. When the load is disconnected, the VM pin returns to the VSS potential. This IC detects the status when the impedance between the EB pin and EB pin (Refer to Figure 13) increases and is equal to the impedance that enables automatic restoration and the voltage at the VM pin returns to overcurrent detection voltage 1 (VIOV1) or lower and the overcurrent status is restored to the normal status. 13 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 6. 0 V Battery Charge Function Some battery providers do not recommend charging for a completely self-discharged battery. Please ask the battery provider to determine whether to enable or inhibit the 0 V battery charge function. W Caution DE SI G N This function is used to recharge a connected battery whose voltage is 0 V due to self-discharge. When the 0 V battery charge starting charger voltage (V0CHA) or a higher voltage is applied between the EB and EB pins by connecting a charger, the charging control FET gate is fixed to the VDD pin voltage. When the voltage between the gate and source of the charging control FET becomes equal to or higher than the turnon voltage due to the charger voltage, the charging control FET is turned on to start charging. At this time, the discharging control FET is off and the charging current flows through the internal parasitic diode in the discharging control FET. When the battery voltage becomes equal to or higher than overdischarge release voltage n (VDUn), the S-8242B Series enters the normal status. NE 7. 0 V Battery Charge Inhibition Function Some battery providers do not recommend charging for a completely self-discharged battery. Please ask the battery provider to determine whether to enable or inhibit the 0 V battery charge function. NO T RE CO MM EN DE D Caution FO R This function inhibits recharging when a battery that is internally short-circuited (0 V) is connected. When the battery voltage (The voltage between VDD and VSS pins) is the 0 V battery charge inhibition battery voltage (V0INH) or lower, the charging control FET gate is fixed to the EB pin voltage to inhibit charging. When the battery voltage is the 0 V battery charge inhibition battery voltage (V0INH) or higher, charging can be performed. 14 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 8. Delay Circuit N The detection delay times are determined by dividing a clock of approximately 3.5 kHz by the counter. DE SI G Remark 1. The overcurrent detection delay time 2 (tIOV2) starts when the overcurrent detection voltage 1 (VIOV1) is detected. When the overcurrent detection voltage 2 (VIOV2) is detected over the overcurrent detection delay time 2 (tIOV2) after the detection of overcurrent detection voltage 1 (VIOV1), the S-8242B turns the discharging control FET off within tIOV2 from the time of detecting VIOV2. VDD W DO pin tD 0 tD tIOV2 NE VSS Overcurrent detection delay time 2 (tIOV2) VDD R VIOV2 Time VM pin FO VIOV1 Time D VSS DE Figure 9 NO T RE CO MM EN 2. When the overcurrent is detected and continues for longer than the overdischarge detection delay time (tDL) without releasing the load, the condition changes to the power-down condition when the battery voltage falls below the overdischarge detection voltage n (VDLn). When the battery voltage falls below the overdischarge detection voltage n (VDLn) due to the overcurrent, the S-8242B Series turns the discharging control FET off by the overcurrent detection. In this case the recovery of the battery voltage is so slow that if the battery voltage after the overdischarge detection delay time (tDL) is still lower than the overdischarge detection voltage n (VDLn), the S-8242B Series shifts to the power-down condition. 15 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 Timing Chart DE SI G N 1. Overcharge Detection, Overdischarge Detection VCUn VCLn Battery voltage VDUn VDLn (n= 1, 2) W VDD NE DO pin voltage VSS FO CO pin voltage R VDD VSS D VEB VIOV1 VSS VCHA VEB Charger connection Load connection Overcharge detection delay time(tCU) (1) *1 Overdischarge detection delay time (tDL) (2) (1) CO Status MM EN VM pin voltage DE VDD RE *1. (1) : Normal status (2) : Overcharge status (3) : Overdischarge status NO T Remark The charger is assumed to charge with a constant current. 16 Figure 10 (3) (1) BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 N 2. Overcurrent Detection Battery voltage DE SI G VCUn VCLn VDUn VDLn (n= 1, 2) VDD W DO pin voltage NE VSS CO pin voltage R VDD FO VSS VM pin voltage MM EN DE VIOV2 VIOV1 VSS Charger connection Status D VDD Overcurrent detection delay time 2 (tIOV2) Overcurrent detection delay time 1 (tIOV1) (1) *1 (2) (1) (2) (1) CO *1. (1) : Normal status (2) : Overcurrent status Remark The charger is assumed to charge with a constant current. NO T RE Figure 11 17 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 VCUn VCLn DE SI G Battery voltage N 3. Charger Detection VDUn VDLn (n= 1, 2) VDD W DO pin voltage NE VSS VDD R CO pin voltage FO VSS VSS VCHA DE VM pin voltage D VDD Load connection MM EN Charger connection Overdischarge detection delay time (tDL) Status (1) *1 (2) CO *1. (1) : Normal status (2) : Overdischarge status NO T RE Remark The charger is assumed to charge with a constant current. 18 Figure 12 VM pin voltage VCHA Overdischarge detection (VDL) (1) BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 EB VDD C1 Battery 1 R2 S-8242B Series VC C2 VSS DO CO FET2 R3 NE FET1 VM W Battery 2 DE SI G R1 EB R Figure 13 N Battery Protection IC Connection Example FET2 Purpose ESD protection, For power fluctuation Resistor C1 Capacitor For power fluctuation Typ. *1 10 Max. *1 0.47 F *1 100 220 1 F 10 F MM EN R1 Min. D FET1 Parts N-channel Discharge control MOS FET N-channel Charge control MOS FET DE Symbol FO Table 7 Constants for External Components *1 Remark *2 Threshold voltageOverdischarge detection voltage *3 Gate to source withstanding voltageCharger voltage *2 Threshold voltageOverdischarge detection voltage *3 Gate to source withstanding voltageCharger voltage Resistance should be as small as possible to avoid lowering the overcharge detection accuracy due to current *4 consumption. Connect a capacitor of 0.47 F or higher between VDD and *5 VSS. ESD protection, *1 *1 1 k 300 1 k For power fluctuation *1 *1 0.022 F 0.1 F 1.0 F C2 Capacitor For power fluctuation Protection for reverse Select as large a resistance as possible to prevent current R3 Resistor 300 2 k 4 k *6 when a charger is connected in reverse. connection of a charger *1. Please set up a filter constant to be R2 C2 20 F , and to be R1 C1 R2 C2. *2. If the threshold voltage of a FET is low, the FET may not cut the charging current. If a FET with a threshold voltage equal to or higher than the overdischarge detection voltage is used, discharging may be stopped before overdischarge is detected. *3. If the withstanding voltage between the gate and source is lower than the charger voltage, the FET may be destroyed. *4. If R1 has a high resistance, the voltage between VDD and VSS may exceed the absolute maximum rating when a charger is connected in reverse since the current flows from the charger to the IC. Insert a resistor of 10 or higher to R1 for ESD protection. *5. If a capacitor of less than 0.47 F is connected to C1, DO pin may oscillate when load short-circuiting is detected. Be sure to connect a capacitor of 0.47 F or higher to C1. *6. If R3 has a resistance higher than 4 k, the charging current may not be cut when a high-voltage charger is connected. Resistor NO T RE CO R2 Caution 1. The above constants may be changed without notice. 2. It has not been confirmed whether the operation is normal or not in circuits other than the above example of connection. In addition, the example of connection shown above and the constant do not guarantee proper operation. Perform through evaluation using the actual application to set the constant. 19 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 Precautions N The application conditions for the input voltage, output voltage, and load current should not exceed the package power dissipation. DE SI G When connecting a battery and the protection circuit, the output voltage of the DO pin (VDO) may become "L" (initial state). In this case, Short the VM and VSS pins or, Set the VM pin's voltage at the level of the charger detection voltage (VCHA) or more and the overcurrent detection voltage 1 (VIOV1) or less by connecting the charger The output voltage of the DO pin (VDO) is set to "H" (normal status). W Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. NO T RE CO MM EN DE D FO R NE ABLIC Inc. claims no responsibility for any and all disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. 20 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 Characteristics (Typical Data) (1) Current consumption 1. IOPE VDD 8 8 6 4 6 4 2 2 3 4 5 7 6 8 9 0 40 25 10 NE VDD [V] 25 50 75 85 50 75 85 Ta [C] 4. IPDN Ta FO IPDN [A] R 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 40 25 3 4 5 6 7 8 9 10 D 2 0 25 DE IPDN [A] 3. IPDN VDD 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0 W 2 DE SI G 10 IOPE [A] IOPE [A] 12 10 0 N 2. IOPE Ta 12 VDD [V] Ta [C] 0 25 50 VCL [V] MM EN CO 4.350 4.345 4.340 4.335 4.330 4.325 4.320 4.315 4.310 4.305 4.300 40 25 75 85 RE VCU [V] (2) Overcharge detection/release voltage, overdischarge detection/release voltage, overcurrent detection voltage, and delay time 1. VCU Ta 2. VCL Ta 4.125 4.115 4.105 4.095 4.085 4.075 4.065 4.055 4.045 4.035 4.025 40 25 0 Ta [C] 3. VDU Ta VDL [V] VDU [V] 2.90 2.85 0 75 85 50 75 85 Ta [C] 2.95 2.80 40 25 50 4. VDL Ta NO T 3.00 25 25 Ta [C] 50 75 85 2.25 2.24 2.23 2.22 2.21 2.20 2.19 2.18 2.17 2.16 2.15 40 25 0 25 Ta [C] 21 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series 6. tDL Ta 1.42 1.37 1.32 1.27 1.22 1.17 1.12 1.07 1.02 0.97 0.92 40 25 185 N 175 155 145 135 125 0 25 50 115 40 25 75 85 8. VIOV1 Ta 0.220 VIOV1 [V] 0.200 0.205 4 5 6 7 8 0.195 40 25 D VDD [V] 9 FO 0.200 9. VIOV2 VDD 0 DE 1.4 1.2 1.1 1.0 4 5 MM EN 1.3 7 6 8 75 85 50 75 85 1.5 1.4 1.3 1.2 1.1 1.0 0.9 40 25 9 0 CO 5 6 VDD [V] Ta [C] tIOV1 [ms] 7 25 12. tIOV1 Ta RE NO T tIOV1 [ms] 50 Ta [C] VDD [V] 11. tIOV1 VDD 22 25 10. VIOV2 Ta 1.5 VIOV2 [V] 0.210 R 0.205 VIOV2 [V] VIOV1 [V] 0.215 0.210 4 75 85 0.220 0.215 10.8 10.4 10.0 9.6 9.2 8.8 8.4 8.0 7.6 7.2 50 NE 0.225 0.225 0.9 25 Ta [C] 7. VIOV1 VDD 0.195 0 W Ta [C] DE SI G 165 tDL [ms] tCU [s] 5. tCU Ta Rev.2.3_02 8 9 10.8 10.4 10.0 9.6 9.2 8.8 8.4 8.0 7.6 7.2 40 25 0 25 Ta [C] 50 75 85 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 0.36 0.34 0.34 0.32 0.32 0.30 0.28 0.26 0.28 0.26 0.24 0.24 0.22 0.30 4 5 6 7 8 0.22 40 25 9 1.6 0.2 1.4 0.4 1.2 1.0 ICOL [mA] R 0.6 0.8 0.8 0.6 FO 1.0 1.2 1.4 0.4 0.2 1 2 3 4 5 3. IDOH VDO 0.4 0.6 0.8 1.0 1.2 1 2 3 4 CO 0 MM EN 0 0.2 7 DE VCO [V] 6 6 7 0 1 2 3 4 5 6 7 8 9 VCO [V] 4. IDOL VDO 0.30 0.25 0.20 0.15 0.10 0.05 0 0 1 2 3 VDO [V] NO T RE VDO [V] 5 0 D 0 IDOL [mA] ICOH [mA] 75 85 50 NE 2. ICOL VCO 0 IDOH [mA] 25 W (3) CO/DO pin 1. ICOH VCO 1.4 0 Ta [C] VDD [V] 1.6 DE SI G 0.38 0.36 N 14. tIOV2 Ta 0.38 tIOV2 [ms] tIOV2 [ms] 13. tIOV2 VDD 23 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 Marking Specifications 8 (1) (2) (3) (4) (9) (10) (11) 4 (5) (6) (7) (8) 1 (1) (2) to (4) (5), (6) (7) to (11) Blank Product code (Refer to Product name vs. Product code) Blank Lot number DE SI G SNT-8A Top view N (1) SNT-8A 5 W Product Name vs. Product Code Product Code (2) (3) (4) S-8242BAB-I8T1x Q N B S-8242BAC-I8T1x Q N C S-8242BAD-I8T1x Q N D S-8242BAE-I8T1x Q N E S-8242BAF-I8T1x Q N F S-8242BAG-I8T1x Q N G S-8242BAH-I8T1x Q N H S-8242BAI-I8T1x Q N I S-8242BAM-I8T1x Q N M S-8242BAN-I8T1x Q N N S-8242BAO-I8T1x Q N O S-8242BAQ-I8T1x Q N Q S-8242BAR-I8T1x Q N R S-8242BAU-I8T1x Q N U S-8242BAV-I8T1x Q N V S-8242BAW-I8T1x Q N W S-8242BAX-I8T1x Q N X S-8242BAY-I8T1x Q N Y S-8242BAZ-I8T1x Q N Z S-8242BBA-I8T1x Q O A S-8242BBB-I8T1x Q O B S-8242BBC-I8T1x Q O C S-8242BBD-I8T1x Q O D S-8242BBF-I8T1x Q O F S-8242BBH-I8T1x Q O H S-8242BBI-I8T1x Q O I S-8242BBJ-I8T1x Q O J S-8242BBK-I8T1x Q O K S-8242BBQ-I8T1x Q O Q S-8242BBR-I8T1x Q O R S-8242BBW-I8T1x Q O W S-8242BBZ-I8T1U Q O Z Remark 1. Please contact our sales office for the products with detection voltage value other than those specified above. 2. x: G or U 3. Please select products of environmental code = U for Sn 100%, halogen-free products. NO T RE CO MM EN DE D FO R NE Product Name 24 BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK S-8242B Series Rev.2.3_02 1 (1) to (5): (6) to (8): (1) (2) (3) (4) 8 (9) to (14): Product Name : S8242 (Fixed) Function Code (refer to Product Name vs. Function Code) Lot number DE SI G 8-Pin TSSOP Top view N (2) 8-Pin TSSOP (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) 5 W 4 Product Name vs. Function Code Function Code (6) (7) (8) S-8242BAC-T8T1x B A C S-8242BAD-T8T1U B A D S-8242BAH-T8T1x B A H S-8242BAI-T8T1x B A I S-8242BAP-T8T1x B A P S-8242BAR-T8T1x B A R S-8242BAU-T8T1x B A U S-8242BAV-T8T1x B A V S-8242BAW-T8T1x B A W S-8242BAX-T8T1x B A X S-8242BBD-T8T1U B B D S-8242BBE-T8T1x B B E S-8242BBF-T8T1x B B F S-8242BBG-T8T1x B B G S-8242BBL-T8T1y B B L S-8242BBM-T8T1x B B M S-8242BBO-T8T1y B B O S-8242BBP-T8T1y B B P S-8242BBS-T8T1y B B S S-8242BBU-T8T1y B B U S-8242BBV-T8T1y B B V S-8242BBX-T8T1y B B X S-8242BCA-T8T1U B C A S-8242BCB-T8T1U B C B S-8242BCC-T8T1U B C C S-8242BCC-T8T1U B C C S-8242BCD-T8T1U B C D S-8242BCE-T8T1U B C E S-8242BCF-T8T1U B C F S-8242BCG-T8T1U B C G S-8242BCH-T8T1U B C H Remark 1. Please contact our sales office for the products with detection voltage value other than those specified above. 2. x: G or U 3. y: S or U 4. Please select products of environmental code = U for Sn 100%, halogen-free products. NO T RE CO MM EN DE D FO R NE Product Name 25 1.970.03 7 6 5 3 4 DE SI G N 8 0.08 -0.02 MM EN DE 0.20.05 D FO R 0.480.02 NE 0.5 2 W +0.05 1 NO T RE CO No. PH008-A-P-SD-2.1 TITLE SNT-8A-A-PKG Dimensions No. PH008-A-P-SD-2.1 ANGLE UNIT mm ABLIC Inc. 4.00.1 2.00.05 0.250.05 4.00.1 0.650.05 NE o0.50.1 MM EN 5 6 78 DE 4 321 D FO R 2.250.05 W DE SI G N +0.1 o1.5 -0 CO Feed direction NO T RE No. PH008-A-C-SD-2.0 TITLE SNT-8A-A-Carrier Tape No. PH008-A-C-SD-2.0 ANGLE UNIT mm ABLIC Inc. FO R NE W DE SI G N 12.5max. 9.00.3 DE D Enlarged drawing in the central part MM EN o130.2 (60) CO (60) NO T RE No. PH008-A-R-SD-1.0 TITLE SNT-8A-A-Reel No. PH008-A-R-SD-1.0 QTY. ANGLE UNIT mm ABLIC Inc. 5,000 DE SI G N 0.52 2 NE W 2.01 R 0.52 FO 0.2 0.3 1. 2. 1 (0.25 mm min. / 0.30 mm typ.) (1.96 mm ~ 2.06 mm) D 1. 2. MM EN SNT DE 3. 4. 0.03 mm 1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.). 2. Do not widen the land pattern to the center of the package (1.96 mm to 2.06mm). (0.25 mm min. / 0.30 mm typ.) (1.96 mm ~ 2.06 mm) NO T RE 1. 2. CO Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package. 2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm or less from the land pattern surface. 3. Match the mask aperture size and aperture position with the land pattern. 4. Refer to "SNT Package User's Guide" for details. TITLE No. PH008-A-L-SD-4.1 SNT-8A-A -Land Recommendation PH008-A-L-SD-4.1 No. ANGLE UNIT mm ABLIC Inc. +0.3 5 1 4 NE W DE SI G 8 N 3.00 -0.2 DE D FO R 0.170.05 MM EN 0.20.1 CO 0.65 NO T RE No. FT008-A-P-SD-1.2 TITLE TSSOP8-E-PKG Dimensions No. FT008-A-P-SD-1.2 ANGLE UNIT mm ABLIC Inc. 4.00.1 2.00.05 o1.550.05 DE SI G N 0.30.05 +0.1 8.00.1 NE W o1.55 -0.05 FO R (4.4) +0.4 MM EN DE D 6.6 -0.2 8 1 4 Feed direction NO T RE CO 5 No. FT008-E-C-SD-1.0 TITLE TSSOP8-E-Carrier Tape FT008-E-C-SD-1.0 No. ANGLE UNIT mm ABLIC Inc. N DE SI G W NE R FO D 20.5 o130.5 CO MM EN o210.8 17.51.0 DE Enlarged drawing in the central part 13.41.0 NO T RE No. FT008-E-R-SD-1.0 TITLE TSSOP8-E-Reel No. FT008-E-R-SD-1.0 QTY. ANGLE UNIT mm ABLIC Inc. 3,000 N DE SI G W NE R FO D 20.5 o130.5 CO MM EN o210.8 17.51.0 DE Enlarged drawing in the central part 13.41.0 NO T RE No. FT008-E-R-S1-1.0 TITLE TSSOP8-E-Reel FT008-E-R-S1-1.0 No. QTY. ANGLE UNIT mm ABLIC Inc. 4,000 Disclaimers (Handling Precautions) All the information described herein (product data, specifications, figures, tables, programs, algorithms and application circuit examples, etc.) is current as of publishing date of this document and is subject to change without notice. 2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of any specific mass-production design. ABLIC Inc. is not responsible for damages caused by the reasons other than the products described herein (hereinafter "the products") or infringement of third-party intellectual property right and any other right due to the use of the information described herein. 3. ABLIC Inc. is not responsible for damages caused by the incorrect information described herein. 4. Be careful to use the products within their specified ranges. Pay special attention to the absolute maximum ratings, operation voltage range and electrical characteristics, etc. ABLIC Inc. is not responsible for damages caused by failures and / or accidents, etc. that occur due to the use of the products outside their specified ranges. 5. When using the products, confirm their applications, and the laws and regulations of the region or country where they are used and verify suitability, safety and other factors for the intended use. 6. When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-related laws, and follow the required procedures. 7. The products must not be used or provided (exported) for the purposes of the development of weapons of mass destruction or military use. ABLIC Inc. is not responsible for any provision (export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons, missiles, or other military use. 8. The products are not designed to be used as part of any device or equipment that may affect the human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses. Do not apply the products to the above listed devices and equipments without prior written permission by ABLIC Inc. Especially, the products cannot be used for life support devices, devices implanted in the human body and devices that directly affect human life, etc. Prior consultation with our sales office is required when considering the above uses. ABLIC Inc. is not responsible for damages caused by unauthorized or unspecified use of our products. 9. Semiconductor products may fail or malfunction with some probability. The user of the products should therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction. The entire system must be sufficiently evaluated and applied on customer's own responsibility. MM EN DE D FO R NE W DE SI G N 1. 10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the product design by the customer depending on the intended use. CO 11. The products do not affect human health under normal use. However, they contain chemical substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be careful when handling these with the bare hands to prevent injuries, etc. 12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used. RE 13. The information described herein contains copyright information and know-how of ABLIC Inc. The information described herein does not convey any license under any intellectual property rights or any other rights belonging to ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of this document described herein for the purpose of disclosing it to a third-party without the express permission of ABLIC Inc. is strictly prohibited. NO T 14. For more details on the information described herein, contact our sales office. 2.0-2018.01 www.ablicinc.com