PTFA241301EV1 - Infineon Technologies

Data Sheet 1 of 12 Rev. 05, 2007-05-11

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

PTFA241301E

PTFA241301F

Description

The PTFA241301E and PTFA241301F are thermally-enhanced

130-watt, internally matched GOLDMOS® FETs intended for ultra-

linear applications. They are characterized for CDMA, CDMA2000,

Super3G (3GPP TSG RAN), and WiMAX operation from 2420 to

2480 MHz. Full gold metallization ensures excellent device lifetime

and reliability.

PTFA241301E

Package H-30260-2

Thermally-Enhanced High Power RF LDMOS FETs

130 W, 2420 – 2480 MHz

Three-carrier CDMA2000 Performance

VDD = 28 V, IDQ = 1150 mA, ƒ = 2450 MHz

36 38 40 42 44 46 48

Output Power, Avg. (dBm)

Drain Efficiency (%)

-80

-75

-70

-65

-60

-55

-50

-45

-40

Adj. Ch. Power Ratio (dBc)

ALT UpEfficiency

ACP Up

ACP Low

RF Characteristics

Three-carrier CDMA2000 Measurements (not subject to production test—verified by design/characterization in

Infineon test fixture)

VDD = 28 V, IDQ = 1150 mA, POUT = 25 W average, ƒ = 2450 MHz

Characteristic Symbol Min Typ Max Unit

Gain Gps —14 —dB

Drain Efficiency ηD—25 —%

Adjacent Channel Power Ratio ACPR —–50 —dBc

PTFA241301F

Package H-31260-2

Features

•Thermally-enhanced packaging, Pb-free and

RoHS-compliant

•Broadband internal matching

•Typical CDMA2000 performance at 2450 MHz

- Average output power = 25 W

- Linear Gain = 14 dB

- Efficiency = 25%

•Typical CW performance, 2420 MHz, 28 V

- Output power at P–1dB = 140 W

- Efficiency = 50%

•Integrated ESD protection: Human Body Model,

Class 2 (minimum)

•Excellent thermal stability, low HCI drift

•Capable of handling 10:1 VSWR @ 28 V, 130 W

(CW) output power

*See Infineon distributor for future availability.

PTFA241301E

PTFA241301F

Data Sheet 2 of 12 Rev. 05, 2007-05-11

*See Infineon distributor for future availability.

RF Characteristics (cont.)

Two-tone Measurements (tested in Infineon test fixture)

VDD = 28 V, IDQ = 1150 mA, POUT = 130 W PEP, ƒ = 2420 MHz, tone spacing = 1 MHz

Characteristic Symbol Min Typ Max Unit

Gain Gps 13.0 14 —dB

Drain Efficiency ηD36 38 —%

Intermodulation Distortion IMD —–30 –28 dBc

DC Characteristics

Characteristic Conditions Symbol Min Typ Max Unit

Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V

Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA

VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA

On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.07 —Ω

Operating Gate Voltage VDS = 28 V, IDQ = 1150 mA VGS 22.4 3V

Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage VDSS 65 V

Gate-Source Voltage VGS –0.5 to +12 V

Junction Temperature TJ200 °C

Total Device Dissipation PD438 W

Above 25°C derate by 2.5 W/°C

Storage Temperature Range TSTG –40 to +150 °C

Thermal Resistance (TCASE = 70°C, 130 W CW) RθJC 0.40 °C/W

Ordering Information

Type Package Outline Package Description Marking

PTFA241301E H-30260-2 Thermally-enhanced slotted flange, single-ended PTFA241301E

PTFA241301F H-31260-2 Thermally-enhanced earless flange, single-ended PTFA241301F

PTFA241301E

PTFA241301F

Data Sheet 3 of 12 Rev. 05, 2007-05-11

Linear Broadband Performance

VDD = 28 V, IDQ = 1150 mA, POUT, Avg. = 45.5 dBm

2420 2430 2440 2450 2460 2470 2480

Frequency (MHz)

Gain (dB)

-20

-15

-10

-5

Return Loss (dB)

Gain

Return Loss

Broadband CW Performance (at P–1dB)

VDD = 28 V, IDQ = 1150 mA

2420 2430 2440 2450 2460 2470 2480

Frequency (MHz)

Gain (dB)

Efficiency (%), POUT (dBm)

Output Power

Efficiency

Gain

Typical Performance (data taken in a production test fixture)

Gain & Efficiency vs. Output Power

VDD = 28 V, IDQ = 1150 mA, ƒ = 2450 MHz

36 38 40 42 44 46 48 50 52

Output Power (dBm)

Gain (dB)

Drain Efficiency (%)

Efficiency

Gain

Intermodulation Distortion vs. Output Power

(as measured in a broadband circuit)

VDD = 28 V, IDQ = 1150 mA,

ƒ1 = 2449 MHz, ƒ2 = 2450 MHz

-80

-70

-60

-50

-40

-30

-20

-10

36 38 40 42 44 46 48 50 52

Output Power, Avg. (dBm)

IMD (dBc)

3rd Order

7th

5th

PTFA241301E

PTFA241301F

Data Sheet 4 of 12 Rev. 05, 2007-05-11

IS-95 CDMA Performance

VDD = 28 V, IDQ = 1150 mA, ƒ = 2450 MHz

30 32 34 36 38 40 42 44

Output Power, Avg. (dBm)

Drain Efficiency (%)

-80

-75

-70

-65

-60

-55

-50

-45

-40

Adjacent Channel Power

Ratio (dBc)

TCASE = 25°C

TCASE = 90°C

Efficiency

ACP FC – 0.75 MHz

ACP FC + 1.98 MHz

IM3 vs. Output Power at Selected Biases

VDD = 28 V, ƒ1 = 2449, ƒ2 = 2450 MHz

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

36 38 40 42 44 46 48 50

Output Power, Avg. (dBm)

IMD (dBc)

860 mA

1430 mA

1150 mA

Output Power (at 1 dB compression)

vs. Supply Voltage

IDQ = 1150 mA, ƒ = 2450 MHz

49.0

49.5

50.0

50.5

51.0

51.5

52.0

24 26 28 30 32

Supply Voltage (V)

Output Power (dBm)

Power Sweep

VDD = 28 V, ƒ = 2450 MHz

37 39 41 43 45 47 49 51 53

Output Power (dBm)

Power Gain (dB)

IDQ = 1430 mA

IDQ = 860 mA

IDQ = 1150 mA

Typical Performance (cont.)

PTFA241301E

PTFA241301F

Data Sheet 5 of 12 Rev. 05, 2007-05-11

WiMAX Performance

VDD = 28 V, IDQ = 1.2 A,

(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,

sample rate = 4 MHz)

15 20 25 30 35 40 45 50

Output Power (dBm)

Efficiency (%)

-45

-40

-35

-30

-25

-20

-15

EVM (dBc)

Efficiency

ƒ = 2.42 GHz

ƒ = 2.48 GHz

ƒ = 2.45 GHz

Typical Performance (cont.)

WiMAX Performance

VDD = 28 V, IDQ = 1.2 A, ƒ = 2480 MHz,

(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,

sample rate = 4 MHz)

-45

-40

-35

-30

-25

-20

-15

15 20 25 30 35 40 45 50

Output Power (dBm)

EVM (dB)

t = +25 °C

t = +85 °C

t = –20 °C

WiMAX Performance

VDD = 28 V, ƒ = 2480 MHz

(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,

sample rate = 4 MHz)

-45

-40

-35

-30

-25

-20

-15

15 20 25 30 35 40 45 50

Output Power (dBm)

EVM (dB)

IDQ = 0.90 A

IDQ = 1.2 A

IDQ = 1.65 A

Power Sweep, under Pulsed Conditions

VDD = 28 V, IDQ = 1.15 A, ƒ = 2420 MHz,

pulse period = 800 µs, pulse width = 80 µs,

1% duty cycle

30 35 40 45

Input Power (dBm)

Output Power (dBm)

Ideal Actual

P–6dB = 52.5 dBm

P–1dB = 51.5 dBm

P–3dB = 52.1 dBm

PTFA241301E

PTFA241301F

Data Sheet 6 of 12 Rev. 05, 2007-05-11

Broadband Circuit Impedance

Z Source Z Load

Frequency Z Source ΩZ Load Ω

MHz RjX RjX

2420 13.20 4.69 1.35 4.73

2430 13.30 4.75 1.28 4.80

2450 13.85 4.94 1.14 4.99

2470 14.59 5.00 1.06 5.27

2480 15.01 4.91 1.01 5.43

See next page for circuit information

0.1

0.3

0.2

Z Load

2420 MHz

2480 MHz

Z Source

2420 MHz

Z0 = 50 Ω

Typical Performance (cont.)

CCDF vs. Output Power Peak-to-Average Ratio

VDD = 28 V, IDQ = 1.15 A, ƒ = 2400 MHz,

single-carrier 3GPP WCDMA,

TM1, 64 DPCH, PAR = 7.5 dB

0.001

0.01

0.1

100

0123456789

Output Power PAR (dB)

Probability CCDF (%)

Source

30 dBm

43 dBm

43.5 dBm

44 dbm

46 dBm

48 dBm

Bias Voltage vs. Temperature

Voltage normalized to typical gate voltage,

series show current

0.95

0.96

0.97

0.98

0.99

1.00

1.01

1.02

1.03

-20 020 40 60 80 100

Case Temperature (°C)

Normalized Bias Voltage (V)

0.28 A

0.83 A

1.39 A

2.09 A

4.17 A

6.26 A

8.34 A

10.43 A

12.52 A

PTFA241301E

PTFA241301F

Data Sheet 7 of 12 Rev. 05, 2007-05-11

A241301e_sch

2K VR4

2K V

0.001µF

BCP56

1.3K VR1

1.2K V

LM7805

0.001µF

QQ1

5.1K V

4.5pF

10 µF

35V

4.5pF0.1µF

0.9pF

l1l2l3l5l7

10V

R7C5C4 C6

V5.1K

1.0pF

DUT 4.5pF

0.6pF

4.5pF 1µF 0.1µF

VDD

l13 l14

C10 C11 C12 C13

C19

C18

10µF

50V

1µF 10µF

50V

4.5pF 0.1µF

C17C16C15C14

RF_OUT

VDD

RF_IN

l10

l11 l12

Reference Circuit

Reference circuit schematic for ƒ = 2420 MHz

Circuit Assembly Information

DUT PTFA241301E or PTFA241301F LDMOS Transistor

PCB 0.76 mm [.030”] thick, εr = 4.5 Rogers TMM4 2 oz. copper

Microstrip Electrical Characteristics at 2420 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)

l10.112 λ, 50.0 Ω7.52 x 1.37 0.296 x 0.054

l20.039 λ, 34.0 Ω2.54 x 2.54 0.100 x 0.100

l30.045 λ, 34.0 Ω2.92 x 2.54 0.115 x 0.100

l40.044 λ, 34.0 Ω2.87 x 2.54 0.113 x 0.100

l50.017 λ, 34.0 Ω1.09 x 2.54 0.043 x 0.100

l60.307 λ, 60.0 Ω21.01 x 0.97 0.827 x 0.038

l70.019 λ, 14.7 Ω1.17 x 7.62 0.046 x 0.300

l80.083 λ, 8.0 Ω5.03 x 15.24 0.198 x 0.600

l9, l10 0.237 λ, 50.0 Ω16.00 x 1.27 0.630 x 0.050

l11 0.057 λ, 4.3 Ω3.43 x 29.85 0.135 x 1.175

l12 (taper) 0.098 λ, 4.3 Ω / 50.0 Ω5.99 x 29.85 / 1.37 0.236 x 1.175 / 0.054

l13 0.034 λ, 50.0 Ω2.29 x 1.37 0.090 x 0.054

l14 0.164 λ, 50.0 Ω11.13 x 1.37 0.438 x 0.054

1Electrical characteristics are rounded.

PTFA241301E

PTFA241301F

Data Sheet 8 of 12 Rev. 05, 2007-05-11

Reference Circuit (cont.)

Component Description Suggested Manufacturer P/N or Comment

C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND

C4 Tantalum capacitor, 10 µF, 35 V Digi-Key 366-1655-2-ND

C5, C12, C16 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND

C6, C7, C10, C14, C18 Ceramic capacitor 4.5 pF ATC 100B 4R5

C8 Ceramic capacitor 0.9 pF ATC 100B 0R9

C9 Ceramic capacitor 1 pF ATC 100B 1R0

C11, C15 Ceramic capacitor 1 µF Digi-Key 19528-ND

C13, C17 Capacitor, 10 µF, 50 VGarrett Electronics TPS106K050R0400

C19 Ceramic capacitor 0.6 pF ATC 100B 0R6

L1, L2 Ferrite, 6 mm Ferroxcube 53/3/4.6-452

Q1 Transistor Infineon Technologies BCP56

QQ1 Voltage regulator, National Semiconductor LM7805

R1 Chip resistor, 1.2 k-ohms Digi-Key P1.2KGCT-ND

R2 Chip resistor, 1.3 k-ohms Digi-Key P1.3KGCT-ND

R3 Chip resistor, 2 k-ohms Digi-Key P22KECT-ND

R4 Potentiometer, 2 k-ohms Digi-Key 3224W-202ETR-ND

R5, R7 Chip resistor, 5.1 k-ohms Digi-Key P5.1KECT-ND

R6 Chip resistor, 10 ohms Digi-Key P10ECT-ND

A241301e_assy-05-09-08

QQ1

C3 C1

R5 R3

R6 R7

C7 C8 C9

C10

C11

C13

C18

C19

C16

C17

C15

C14 L2

C12

VDD

Reference circuit assembly diagram* (not to scale)

*Gerber Files for this circuit available on request

RF_IN RF_OUT

PTFA241301E

PTFA241301F

Data Sheet 9 of 12 Rev. 05, 2007-05-11

260-cases_30260

0.0381 [.0015] -A-

22.35±0.23

[.880±.009]

(2X 4.83±0.50

[.190±.020])

2X 12.70

[.500]

23.37±0.51

[.920±.020]

4X R 1.52

[.060]

2X 3.25

[.128]

1.02

[.040]

27.94

[1.100]

34.04

[1.340]

FLANGE 13.72

[.540]

45° X (2.03

[.080])

SPH 1.57

[.062]

2X 1.63

[.064] R

4.11±0.38

[.162±.015]

[.520 ]

+.004

–.006

LID 13.21+0.10

–0.15

Package Outline Specifications

Package H-30260-2

Diagram Notes—unless otherwise specified:

1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].

2. All tolerances ± 0.127 [.005] unless specified otherwise.

3. Pins: D = drain, S = source, G = gate.

4. Interpret dimensions and tolerances per ASME Y14.5M-1994.

5. Primary dimensions are mm. Alternate dimensions are inches.

6. Gold plating thickness:

S - flange: 2.54 micron [100 microinch] (min)

D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]

Find the latest and most complete information about products and packaging at the Infineon Internet page

http://www.infineon.com/products

PTFA241301E

PTFA241301F

Data Sheet 10 of 12 Rev. 05, 2007-05-11

Package Outline Specifications (cont.)

Package H-31260-2

Diagram Notes—unless otherwise specified:

1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].

2. All tolerances ± 0.127 [.005] unless specified otherwise.

3. Pins: D = drain, S = source, G = gate.

4. Interpret dimensions and tolerances per ASME Y14.5M-1994.

5. Primary dimensions are mm. Alternate dimensions are inches.

6. Gold plating thickness:

S - flange: 2.54 micron [100 microinch] (min)

D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]

Find the latest and most complete information about products and packaging at the Infineon Internet page

http://www.infineon.com/products

260-cases_31260

SPH 1.57

[.062]

1.02

[.040]

23.37±0.51

[.920±.020]

2X 12.70

[.500]

45° X 2.031

[.080]

-A-

4.11±0.38

[.162±.015]

LID 22.35±0.23

[.880±.009]

FLANGE 23.11

[.910]

13.72

[.540]

2x 4.83±0.50

[.190±.020]

[.520 +.004 ]

–.006 .

LID 13.21 +0.10

–0.15

0.0381 [.0015]

4X R 0.51

[R.020] MAX

Data Sheet 11 of 12 Rev. 05, 2007-05-11

PTFA241301EF

Confidential, Limited Internal Distribution

Revision History: 2007-05-11 Data Sheet

Previous Version: 2006-06-29, Data Sheet

Page Subjects (major changes since last revision)

5, 6 Add two graphs.

9Update package outline diagram for Package H-30260-2.

Notes:

PTFA241301E

PTFA241301F

Data Sheet 12 of 12 Rev. 05, 2007-05-11

GOLDMOS® is a registered trademark of Infineon Technologies AG.

Edition 2007-05-11

Published by

Infineon Technologies AG

81726 München, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics

(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or

any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties

and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any

third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon

Technologies Office (www.infineon.com/rfpower).

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Due to technical requirements components may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of

Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support

device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it

is reasonable to assume that the health of the user or other persons may be endangered.

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