BZT52B2V4-BZT52B75
500mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
VZ Tolerance Selection of ±2%
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Min Max Min Max
Case : Flat lead SOD-123 small outline plastic package 1.5 1.7 0.059 0.067
3.3 3.7 0.130 0.146
0.5 0.7 0.020 0.028
2.5 2.7 0.098 0.106
0.8 1.0 0.031 0.039
0.05 0.2 0.002 0.008
Package
SOD-123F
Maximum Ratings
IF=10mA
Notes:1. Valid provided that electrodes are kept at ambient temperature
VBR : Voltage at IZK
IZK : Test current for voltage VBR
ZZK : Dynamic impedance at IZK
IZT : Test current for voltage VZ
VZ: Voltage at current IZT
ZZT : Dynamic impedance at IZT
IZM : Maximum steady state current
VZM : Voltage at IZM
Zener I vs. V Characteristics
V
Thermal Resistance (Junction to Ambient) (Note 1) RθJA 350 °C/W
Forward Voltage 1
TJ, TSTG °C
BZT52Bxx RH 3Kpcs / 7" Reel
Units
PDmW
Rating at 25°C ambient temperature unless otherwise specified.
Type Number
D
E
Ordering Information
Part No. Packing
-65 to + 150
Value
500
Junction and Storage Temperature Range
VF
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
Power Dissipation
Symbol
F
High temperature soldering guaranteed: 260 °C/10s
Polarity : Indicated by cathode band
Weight : 8.85±0.5 mg
A
B
C
SOD-123F
Maximum Ratings and Electrical Characteristics
Features
Mechanical Data
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
Unit (mm)
Wide zener voltage range selection : 2.4V to 75V
Unit (inch)
Dimensions
D
A
B
C
E
F
Voltage
Curren
IF
VF
VR
IR
VBR
IZK
VZ
IZT
VZM
IZM
Forward RegionLeakage RegionBreakdownRegion
Version : D10
BZT52B2V4-BZT52B75
500mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
Electrical Characteristics
Ta = 25°C unless otherwise noted
VF Forward Volatge = 1 V Maximum @ IF = 10mA for all part numbers
Device
Marking Min Nom Max
BZT52B2V4 2V4B 2.35 2.40 2.45 5 100 1 564 45 1
BZT52B2V7 2V7B 2.65 2.70 2.75 5 100 1 564 18 1
BZT52B3V0 3V0B 2.94 3.00 3.06 5 100 1 564 9 1
BZT52B3V3 3V3B 3.23 3.30 3.37 5 95 1 564 4.5 1
BZT52B3V6 3V6B 3.53 3.60 3.67 5 90 1 564 4.5 1
BZT52B3V9 3V9B 3.82 3.90 3.98 5 90 1 564 2.7 1
BZT52B4V3 4V3B 4.21 4.30 4.39 5 90 1 564 2.7 1
BZT52B4V7 4V7B 4.61 4.70 4.79 5 80 1 470 2.7 2.0
BZT52B5V1 5V1B 5.00 5.10 5.20 5 60 1 451 1.8 2.0
BZT52B5V6 5V6B 5.49 5.60 5.71 5 40 1 376 0.9 2.0
BZT52B6V2 6V2B 6.08 6.20 6.32 5 10 1 141 2.7 4.0
BZT52B6V8 6V8B 6.66 6.80 6.94 5 15 1 75 1.8 4.0
BZT52B7V5 7V5B 7.35 7.50 7.65 5 15 1 75 0.9 5.0
BZT52B8V2 8V2B 8.04 8.20 8.36 5 15 1 75 0.63 5.0
BZT52B9V1 9V1B 8.92 9.10 9.28 5 15 1 94 0.45 6.0
BZT52B10 10VB 9.80 10.00 10.20 5 20 1 141 0.18 7.0
BZT52B11 11VB 10.78 11.00 11.22 5 20 1 141 0.09 8.0
BZT52B12 12VB 11.76 12.00 12.24 5 25 1 141 0.09 8.0
BZT52B13 13VB 12.74 13.00 13.26 5 30 1 160 0.09 8.0
BZT52B15 15VB 14.70 15.00 15.30 5 30 1 188 0.045 10.5
BZT52B16 16VB 15.68 16.00 16.32 5 40 1 188 0.045 11.2
BZT52B18 18VB 17.64 18.00 18.36 5 45 1 212 0.045 12.6
BZT52B20 20VB 19.60 20.00 20.40 5 55 1 212 0.045 14.0
BZT52B22 22VB 21.56 22.00 22.44 5 55 1 235 0.045 15.4
BZT52B24 24VB 23.52 24.00 24.48 5 70 1 235 0.045 16.8
BZT52B27 27VB 26.46 27.00 27.54 2 80 0.5 282 0.045 18.9
BZT52B30 30VB 29.40 30.00 30.60 2 80 0.5 282 0.045 21.0
BZT52B33 33VB 32.34 33.00 33.66 2 80 0.5 306 0.045 23.0
BZT52B36 36VB 35.28 36.00 36.72 2 90 0.5 329 0.045 25.2
BZT52B39 39VB 38.22 39.00 39.78 2 130 0.5 329 0.045 27.3
BZT52B43 43VB 42.14 43.00 43.86 2 150 0.5 353 0.045 30.1
BZT52B47 47VB 46.06 47.00 47.94 2 170 0.5 353 0.045 33.0
BZT52B51 51VB 49.98 51.00 52.02 2 180 0.5 376 0.045 35.7
BZT52B56 56VB 54.88 56.00 57.12 2 200 0.5 400 0.045 39.2
BZT52B62 62VB 60.76 62.00 63.24 2 215 0.5 423 0.045 43.4
BZT52B68 68VB 66.64 68.00 69.36 2 240 0.5 447 0.045 47.6
BZT52B75 75VB 73.50 75.00 76.50 2 255 0.5 470 0.045 52.5
Notes:
1. The Zener Volta
g
e
(
V
Z
)
is tested under pulse condition of 10ms
.
2. The device numbers listed have a standard tolerance on the nominal zener volta
g
e o
f
±2%.
4. The Zener impedance is derived from the 60-cycle ac volatge, which results when an ac current having an
rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed to IZT or IZK.
ZZK @ IZK(Ω)
Max
VZ @ IZT (Volt) IR @ VR(μA)
Max
IZK(mA)IZT(mA) VR(V)
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and
tighter voltage tolerances, contact your nearest Taiwan semiconductor representative.
Part Number ZZT @ IZT(Ω)
Max
Version : D10
BZT52B2V4-BZT52B75
500mW, 2% Tolerance SMD Zener Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 1 Typical Forward Characteristics
1
10
100
1000
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Forward Current (mA)
0
0
1
10
100
0123456789101112
Zener Current (mA)
Ta=25°C
0
100
200
300
400
500
0 50 100 150 200
Power Dissipation (mW)
FIG 3 Zener Breakdown Characteristics
0
0
1
10
100
15 25 35 45 55 65 75
Zener Current (mA)
Ta=25°C
Ta=150°C
Ta=25°C
FIG 6 Effect of Zener Voltage on Impedence
1
10
100
1000
1 10 100
Dynamic Impedence (Ώ)
FIG 5 Typical Capacitance
1
10
100
1000
1 10 100
Capacitance(pF)
Bias at 50% of VZ(Nom)
1V Bias
Iz=20m
Iz=5mA
Iz=1mA
Zener Voltage (V)
Forward Voltage (V)
FIG 2 Zener Breakdown Characteristics
Zener Voltage (V)
FIG 4 Admissible Power Disspation Curve
Zener Voltage (V) Ambient Tempeture (°C)
Zener Voltage (V)
0.01
0.1
Version : D10
